CN101685261B - Off-axis light source, light shading panel and method for defining different patterns by single exposure - Google Patents
Off-axis light source, light shading panel and method for defining different patterns by single exposure Download PDFInfo
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- CN101685261B CN101685261B CN200810165773XA CN200810165773A CN101685261B CN 101685261 B CN101685261 B CN 101685261B CN 200810165773X A CN200810165773X A CN 200810165773XA CN 200810165773 A CN200810165773 A CN 200810165773A CN 101685261 B CN101685261 B CN 101685261B
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- 238000001259 photo etching Methods 0.000 description 5
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- 238000007687 exposure technique Methods 0.000 description 2
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Abstract
The invention provides an off-axis light source, a light shading panel and a method for defining different patterns by single exposure. An X dipole irradiation pattern, a Y dipole irradiation pattern and a four-pole irradiation pattern are arranged on the irradiation surface of the off-axis light source, wherein the irradiation area of the four-pole irradiation pattern is less than that of the X dipole irradiation pattern or the Y dipole irradiation pattern. The invention further provides the light shading panel with a corresponding opening for forming the off-axis light source, and provides the method for defining different patterns with single exposure by using the off-axis light source.
Description
Technical field
The invention relates to photoetching process, and particularly relevant a kind of off-axis light source, shadow shield, and with the method for single exposure defining different patterns.
Background technology
In existing photoetching process, the optimum exposure parameter setting of different shape pattern is also different, its differences more dwindles along with the technology live width and increases, so often must use double-exposure technique, it is in different off-axis irradiation shape of two exposure steps collocation and different photomasks, with the gradation defining different patterns.
For example, in the storer photoetching process technology of generation, memory cell areas contains the intensive line pattern of fine pith (pitch) with critical size below live width 50 nanometers, and periphery circuit region then contains intensive line pattern of coarse pitch and estranged line pattern.Because the circuit pattern dimensions/directions difference of the two is big, usually be difficult to single exposure and define whole circuit patterns of same figure layer, so must use the double-exposure technique of the different off-axis irradiation shapes of collocation, with the circuit pattern of gradation define storage units district and periphery circuit region.
Please refer to Fig. 1, when the intensive line pattern of memory cell areas trend for X to the time, its off-axis light source that is suitable for has Y dipole irradiation pattern, it is included in two illumination areas 10 that Y upwards arranges.As for comprise X to the periphery circuit region of Y to pattern, its off-axis light source that is suitable for then comprises ring-type illumination area 12.This illumination area 10 or 12 can form with the shadow shield with corresponding opening simply, and this shadow shield is to place exposure with before the light emitting source.
Yet, because of the time shutter of same two pieces of photomasks of figure layer needs and twice, so the double exposure art has degradation problem under raising of photomask cost and the wafer output.
Summary of the invention
Therefore, the invention provides a kind of off-axis light source, it can be applied in the method with the single exposure defining different patterns.
The present invention also provides a kind of shadow shield, and it can be in order to form the off-axis light source of the invention described above.
The present invention provides a kind of method with the single exposure defining different patterns again, and it is to utilize the off-axis light source of the invention described above to reach.
One X dipole irradiation pattern, a Y dipole irradiation pattern and one or four utmost point irradiation patterns are arranged on the irradiation face of off-axis light source of the present invention, and wherein the irradiation area of four utmost point irradiation patterns is less than the irradiation area of X or Y dipole irradiation pattern.
In certain embodiments, above-mentioned X dipole irradiation pattern is included in 2 first illumination areas of arranging on the directions X, Y dipole irradiation pattern is included in 2 second illumination areas of arranging on the Y direction, and four utmost point irradiation patterns comprise 4 the 3rd illumination areas, and wherein any the 3rd illumination area is between 1 first illumination area and 1 second illumination area.The line at the center of any the 3rd illumination area and irradiation face center and the angle between X-axis or the Y-axis can be about 45 °.
In one embodiment, the numerical aperture of above-mentioned off-axis light source is between 0.65 and 1.30, and when the radius of irradiation face is decided to be 1, by irradiation face center to the distance of each first or second illumination area outer rim between 0.50 and 0.98, by irradiation face center to the distance of each first or second illumination area inner edge between 0.20 and 0.91, each first or two illumination area with respect to the subtended angle at irradiation face center between 10 ° and 70 °, distance between the Center-to-Center Y-axis of each the 3rd illumination area is between 0.10 and 0.70, distance between the Center-to-Center X-axis of each the 3rd illumination area is between 0.10 and 0.70, and the radius of each the 3rd illumination area is between 0.02 and 0.20.
Shadow shield of the present invention can be in order to form the off-axis light source of the invention described above, opening with corresponding X dipole irradiation pattern, the opening of corresponding Y dipole irradiation pattern, and the opening of corresponding four utmost point irradiation patterns, the opening total area of wherein corresponding four utmost point irradiation patterns is less than the opening of corresponding X or Y dipole irradiation pattern.
In certain embodiments, the opening of corresponding X dipole irradiation pattern is included in 2 first openings of arranging on the directions X, the opening of corresponding Y dipole irradiation pattern is included in 2 second openings of arranging on the Y direction, the opening of corresponding four utmost point irradiation patterns comprises 4 the 3rd openings, and wherein any one the 3rd opening is between 1 first opening and 1 second opening.Angle between the line at the center of any the 3rd opening and shadow shield center and X or the Y-axis can be about 45 °.
In one embodiment, when the radius of shadow shield is decided to be 1, by the shadow shield center to the distance of each first or two opening outer rim between 0.50 and 0.98, by the shadow shield center to the distance of each first or two opening inner edge between 0.20 and 0.91, each first or two opening with respect to the subtended angle at shadow shield center between 10 ° and 70 °, distance between the Center-to-Center Y-axis of each the 3rd opening is between 0.10 and 0.70, distance between the Center-to-Center X-axis of each the 3rd opening is between 0.10 and 0.70, and each the 3rd opening radius is between 0.02 and 0.20.
Method with the single exposure defining different patterns of the present invention comprises that the single photo mask that uses aforementioned off-axis light source and have described different shape pattern exposes.
In certain embodiments, above-mentioned different shape pattern comprises X that pitch is less or Y to intensive pattern, and the bigger X of pitch and Y are to pattern.In one embodiment, X that above-mentioned pitch is less or Y comprise the pattern of a memory cell areas to intensive pattern, and the bigger X of above-mentioned pitch and Y pattern from a periphery circuit region to pattern that comprise.
Because when adopting off-axis light source of the present invention, the photoetching process of same figure layer only needs single exposure step and one piece of photomask, so compared to the double exposure art of prior art, the present invention can reduce the photomask cost and improve the wafer output.
Become apparent for allowing state with other purposes, feature and advantage on the present invention, preferred embodiment cited below particularly, and cooperate appended graphic being described in detail as follows.
Description of drawings
Fig. 1 illustrates the synoptic diagram of the employed two kinds of off-axis light sources of known a kind of double exposure technology.
Fig. 2 is the off-axis light source of one embodiment of the invention and the synoptic diagram of shadow shield.
Fig. 3 indicates the off-axis light source of one embodiment of the invention and each structural parameters of shadow shield.
[main element symbol description]
10,12: illumination area
200: irradiation face, shadow shield
210:X dipole irradiation pattern
220:Y dipole irradiation pattern
230: four utmost point irradiation patterns
212,222,232: illumination area, shadow shield upper shed
R1, R2, θ, p
x, p
y, r: structural parameters
Embodiment
Please refer to Fig. 2, it is the off-axis light source of one embodiment of the invention and the synoptic diagram of shadow shield.
X dipole irradiation pattern 210, Y dipole irradiation pattern 220 and four utmost point irradiation patterns 230 are arranged on the irradiation face 200 of this off-axis light source, and wherein the irradiation area of four utmost point irradiation patterns 230 is less than the irradiation area of X dipole irradiation pattern 210 or Y dipole irradiation pattern 220.
X dipole irradiation pattern 210 is included in 2 first illumination areas of arranging on the directions X 212, Y dipole irradiation Figure 22 0 case is included in 2 second illumination areas of arranging on the Y direction 222, and four utmost point irradiation patterns comprise 4 the 3rd illumination areas 232, and wherein any the 3rd illumination area 232 is between 1 first illumination area 212 and 1 second illumination area 222.4 the 3rd illumination areas 232 preferably adopt on directions X and Y direction all configuration modes of symmetry, that is the line at the center of any the 3rd illumination area 232 and irradiation face 200 centers and the angle between X or Y-axis can be about 45 °.
For above-mentioned first, second and third illumination area 212,222,232, the area that preferred design is each first illumination area 212 and second illumination area 222 is mutually the same, and the area of each the 3rd illumination area 232 is mutually the same.
Then please refer to Fig. 3, it indicates the off-axis light source of one embodiment of the invention and each structural parameters of shadow shield.In this embodiment, the numerical aperture of above-mentioned off-axis light source is between 0.65 and 1.30, preferably between 1.05 and 1.30, and when the radius of irradiation face 200 is decided to be 1, by irradiation face 200 centers to the distance R 1 of each first illumination area 212 or second illumination area, 222 outer rims between 0.50 and 0.98, preferably between 0.85 and 0.96; By irradiation face center to the distance R 2 of each first illumination area 212 or second illumination area, 222 inner edges between 0.20 and 0.91, preferably between 0.64 and 0.768; Each first illumination area 212 or second illumination area 222 with respect to the subtended angle θ at irradiation face 200 centers between 10 ° and 70 °, preferably between 30 ° and 40 °; Between the Center-to-Center Y-axis of each the 3rd illumination area 232 apart from p
xBetween 0.10 and 0.70, preferably between 0.40 and 0.60; Between the Center-to-Center X-axis of each the 3rd illumination area 232 apart from p
yBetween 0.10 and 0.70, preferably between 0.40 and 0.60; And the radius r of each the 3rd illumination area 232 is between 0.02 and 0.20, preferably between 0.06 and 0.10.
On the other hand, the shadow shield of this embodiment has the structure of corresponding above-mentioned off-axis light source, so can also explain by Fig. 2, the used label of its each several part also together.
As shown in Figure 2, shadow shield 200 has 2 second openings of arranging 222 at 2 first openings of arranging on the directions X 212, corresponding Y dipole irradiation pattern 220 of corresponding X dipole irradiation pattern 210 on the Y direction, and 4 the 3rd openings 232 of corresponding four utmost point irradiation patterns 230, can form aforementioned off-axis light source before so be placed on the exposure light source of laser and so on.The configuration mode of first opening 212, second opening 222 and the 3rd opening 232 is corresponding with aforementioned the first～three illumination area 222 herein, as long as change the irradiation face in the explanation of above-mentioned off-axis light source structure into shadow shield, the first/two/three illumination areas make the first/two/three openings into, can understand the configuration relation of each opening.
For the effect of off-axis light source/shadow shield of the present invention is described, below explain especially exemplified by the example of a computer simulation.
In this example, the memory cell district have line/gap (line/space, L/S) X of width 50nm is to intensive line pattern, the X that periphery circuit region has a L/S=80nm to the Y of intensive line pattern and L/S=80nm to intensive line pattern.The exposure light wave be the angle direction polarized light (
Polarized light), wavelength is 193nm.
During as NA=1.07 and with the exposure of the Y dipole off-axis light source on Fig. 1 left side, the X of L/S=50nm is to the contrast of intensive line pattern about 0.80, the X of L/S=80nm is to the contrast of intensive line pattern about 0.81, but the Y of L/S=80nm is to the contrast only about 0.35 of intensive line pattern, with 0.81 widely different, so this Y dipole off-axis light source only is fit to the pattern in define storage units district.When exposing in addition as NA=0.90 and with the ring-type off-axis light source on Fig. 1 right side, the X of L/S=80nm can have identical contrast (about 0.64) to the Y of intensive line pattern and L/S=80nm to intensive line pattern, but the X of L/S=50nm is 0 to the contrast of intensive line pattern, so this ring-type off-axis light source only is fit to the pattern of definition periphery circuit region.
But, at NA=1.10 and with structural parameters R1=0.96, R2=0.768, θ=35 °, p
xWhen=0.55, the off-axis light source shown in Figure 3 of the present invention of py=0.55, r=0.08 exposes, not only the X of L/S=80nm can have identical higher contrast (about 0.68) to the Y of intensive line pattern and L/S=80nm to intensive line pattern, the X of L/S=50nm also can reach 0.54 to the contrast of intensive line pattern, so off-axis light source can be used in single step of exposure the pattern in define storage units district and periphery circuit region simultaneously.
Because when adopting off-axis light source of the present invention, the photoetching process of same figure layer only needs single exposure step and one piece of photomask, so compared to the double exposure art of prior art, the present invention can reduce the photomask cost and improve the wafer output.
Though the present invention discloses as above with embodiment; right its is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the accompanying Claim person of defining.
Claims (11)
1. an off-axis light source has an X dipole irradiation pattern, a Y dipole irradiation pattern and one or four utmost point irradiation patterns on its irradiation face, and wherein the irradiation area of this four utmost points irradiation pattern is less than the irradiation area of this X or Y dipole irradiation pattern,
Wherein this X dipole irradiation pattern is included in 2 first illumination areas of arranging on the directions X, this Y dipole irradiation pattern is included in 2 second illumination areas of arranging on the Y direction, and this four utmost points irradiation pattern comprises 4 the 3rd illumination areas, and wherein any the 3rd illumination area is between 1 first illumination area and 1 second illumination area.
2. off-axis light source as claimed in claim 1, wherein the line at the center of the center of any the 3rd illumination area and this irradiation face and the angle between X-axis or the Y-axis are 45 °.
3. off-axis light source as claimed in claim 1, wherein the numerical aperture of this off-axis light source between 0.65 and 1.30, and when the radius of this irradiation face is decided to be 1,
By this irradiation face center to the distance of this first or second illumination area outer rim respectively between 0.50 and 0.98;
By this irradiation face center to the distance of this first or second illumination area inner edge respectively between 0.20 and 0.91;
Respectively this first or second illumination area with respect to the subtended angle at this irradiation face center between 10 ° and 70 °;
Respectively the distance between the Center-to-Center Y-axis of the 3rd illumination area is between 0.10 and 0.70;
Respectively the distance between the Center-to-Center X-axis of the 3rd illumination area is between 0.10 and 0.70; And
Respectively the radius of the 3rd illumination area is between 0.02 and 0.20.
4. shadow shield, in order to form off-axis light source, this shadow shield has the opening of corresponding X dipole irradiation pattern, the opening of corresponding Y dipole irradiation pattern, and the opening of corresponding four utmost point irradiation patterns, the total area of the opening of wherein corresponding four utmost point irradiation patterns is less than the total area of the opening of corresponding X or Y dipole irradiation pattern
The opening of wherein corresponding X dipole irradiation pattern is included in 2 first openings of arranging on the directions X, the opening of corresponding Y dipole irradiation pattern is included in 2 second openings of arranging on the Y direction, and the opening of corresponding four utmost point irradiation patterns comprises 4 the 3rd openings, and wherein any the 3rd opening is between 1 first opening and 1 second opening.
5. shadow shield as claimed in claim 4, wherein the line at the center of any the 3rd opening and this shadow shield center and the angle between X-axis or the Y-axis are 45 °.
6. shadow shield as claimed in claim 4, when its radius is decided to be 1,
By this shadow shield center to the distance of this first or second opening outer rim respectively between 0.50 and 0.98;
By this shadow shield center to the distance of this first or second opening inner edge respectively between 0.20 and 0.91;
Respectively this first or second opening with respect to the subtended angle at this shadow shield center between 10 ° and 70 °;
Respectively the distance between the Center-to-Center Y-axis of the 3rd opening is between 0.10 and 0.70;
Respectively the distance between the Center-to-Center X-axis of the 3rd opening is between 0.10 and 0.70; And
Respectively the radius of the 3rd opening is between 0.02 and 0.20.
7. method with the single exposure defining different patterns, comprise that the single photo mask that uses an off-axis light source and have described different shape pattern exposes, one X dipole irradiation pattern, a Y dipole irradiation pattern and one or four utmost point irradiation patterns are wherein arranged on the irradiation face of this off-axis light source, and the irradiation area of this four utmost points irradiation pattern is less than the irradiation area of this X or Y dipole irradiation pattern
Wherein this X dipole irradiation pattern is included in 2 first illumination areas of arranging on the directions X, this Y dipole irradiation pattern is included in 2 second illumination areas of arranging on the Y direction, and this four utmost points irradiation pattern comprises 4 the 3rd illumination areas, and wherein any the 3rd illumination area is between 1 first illumination area and 1 second illumination area.
8. the method with the single exposure defining different patterns as claimed in claim 7, wherein said different shape pattern comprise X that pitch is less or Y to intensive pattern, and the bigger X of pitch and Y are to pattern.
9. the method with the single exposure defining different patterns as claimed in claim 8, wherein less X of this pitch or Y comprise the pattern of a memory cell areas to intensive pattern, and the bigger X of this pitch and Y pattern from a periphery circuit region to pattern that comprise.
10. the method with the single exposure defining different patterns as claimed in claim 7, wherein the line at the center of the center of any the 3rd illumination area and this irradiation face and the angle between X-axis or the Y-axis are 45 °.
11. the method with the single exposure defining different patterns as claimed in claim 7, wherein the numerical aperture of this off-axis light source between 0.65 and 1.30, and when the radius of this irradiation face is decided to be 1,
By this irradiation face center to the distance of this first or second illumination area outer rim respectively between 0.50 and 0.98;
By this irradiation face center to the distance of this first or second illumination area inner edge respectively between 0.20 and 0.91;
Respectively this first or second illumination area with respect to the subtended angle at this irradiation face center between 10 ° and 70 °;
Respectively the distance between the Center-to-Center Y-axis of the 3rd illumination area is between 0.10 and 0.70;
Respectively the distance between the Center-to-Center X-axis of the 3rd illumination area is between 0.10 and 0.70; And
Respectively the radius of the 3rd illumination area is between 0.02 and 0.20.
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| CN103293877B (en) * | 2013-05-31 | 2014-12-31 | 上海华力微电子有限公司 | Photolithography device and light-transmitting unit adopting quadrupole exposure mode and photolithography method |
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| CN1570769A (en) * | 2003-04-07 | 2005-01-26 | Asml荷兰有限公司 | Device manufacturing method, mask set for use in the method, data set for controlling a programmable patterning device, method of generating a mask pattern and a computer program |
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| CN1570769A (en) * | 2003-04-07 | 2005-01-26 | Asml荷兰有限公司 | Device manufacturing method, mask set for use in the method, data set for controlling a programmable patterning device, method of generating a mask pattern and a computer program |
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