CN101678970A - substrate supporting mechanism - Google Patents
substrate supporting mechanism Download PDFInfo
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- CN101678970A CN101678970A CN200880019238A CN200880019238A CN101678970A CN 101678970 A CN101678970 A CN 101678970A CN 200880019238 A CN200880019238 A CN 200880019238A CN 200880019238 A CN200880019238 A CN 200880019238A CN 101678970 A CN101678970 A CN 101678970A
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- maintaining part
- supporting mechanism
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J11/00—Manipulators not otherwise provided for
- B25J11/0095—Manipulators transporting wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J9/00—Programme-controlled manipulators
- B25J9/02—Programme-controlled manipulators characterised by movement of the arms, e.g. cartesian coordinate type
- B25J9/04—Programme-controlled manipulators characterised by movement of the arms, e.g. cartesian coordinate type by rotating at least one arm, excluding the head movement itself, e.g. cylindrical coordinate type or polar coordinate type
- B25J9/041—Cylindrical coordinate type
- B25J9/042—Cylindrical coordinate type comprising an articulated arm
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Manipulator (AREA)
Abstract
The invention provides a substrate supporting mechanism which can achieve high speed conveyance of a substrate while ensuring proper conveyance operation. In the substrate supporting mechanism,a holding portion (15) made of carbon nano tubes is installed on the supporting surface (14a) of an end effector (14), and a substrate (W) is supported by the distal ends of the carbon nano tubes. An intermolecular force is generated between the substrate and the carbon nano tube and the substrate is supported with a fixed suction force to the supporting surface. The suction force is generated both in the atmosphere and in the vacuum and a bigger force is obtained for a larger number of carbon nano tubes perunit area. With such an arrangement, slip of a conveyance article on the supporting surface can be suppressed effectively and high speed conveyance of a substrate can be attained. Since the carbon nano tube is excellent in heat resistance, poor conveyance due to deterioration or sticking of the holding portion by heat is prevented during use under high temperature environment and proper conveyance operation of substrate can be ensured.
Description
Technical field
The present invention relates to a kind of substrate supporting mechanism, it for example is applied in the manipulator that is used to carry semiconductor substrate.
Background technology
From the angle of prior art, in field of semiconductor manufacture, use board carrying machine hand to come carrying substrate with multi-joint arm.Fig. 7 is the block diagram of the general configuration of this existing board carrying machine hand of expression.This board carrying machine hand 1 has: drive division 2; Arm 3, it is connected for the multi-joint structure and with this drive division 2; End-effector 4 (hand), its front end with arm 3 is connected.Its upper surface of end-effector 4 usefulness comes the back side of holding substrate, carries out the carrying of substrate between a plurality of process chambers such as film forming room and etching chamber, or and platform, substrate reception case between carry out the handing-over operation of substrate.
End-effector 4 is made by materials such as pottery or corrosion-resistant steels usually.Therefore, when making end-effector 4 carry action at a high speed, can give acceleration/accel of substrate, be subjected to the influence of this acceleration/accel, substrate slides on the actr 4 endways, thereby, can not be with board carrying to the tram.In light of this situation, as shown in Figure 8, a plurality of maintaining parts 5 are set on the actr 4 endways, each maintaining part 5 contacts with the assigned position at the substrate W back side respectively.These maintaining parts 5 are made by rubber or elastic body elastomeric material, have the effect of slide relative between the back side that prevents substrate W and the end-effector 4.Thus, the substrate W that can remain on the end-effector 4 is in stable status (for example, with reference to following patent documentation 1) when carrying.
Patent documentation 1: Japanese patent of invention spy opens the 2002-353291 communique
For the maintaining part made from the elastic body elastomeric material 5, under the lower situation of substrate W or ambient temperature (for example, below 200 ℃), can prevent effectively that substrate W from skidding.But under the high situation of temperature (for example, 300~500 ℃), maintaining part 5 can take place because of thermal metamorphism or because of the problem of fusing distortion, its result just can not obtain to prevent the effect of substrate W slip.
On the other hand, under the lower situation of temperature (below 200 ℃), also substrate W can appear and maintaining part 5 is sticked together the problem that together can not break away from end-effector 4 well.For example, and process chamber in platform between when carrying out substrate delivery/reception, substrate can take place can not break away from and split or can not be with the problem of board carrying to the tram from maintaining part 5.
Summary of the invention
The present invention makes in view of the above problems, and purpose is to provide a kind of substrate supporting mechanism, adopts this substrate supporting mechanism, both can realize the high speed of board carrying, can guarantee correct board carrying action again.
Substrate supporting mechanism of the present invention has: holding face, and it is used for holding and is handled upside down thing, maintaining part, it is formed by CNT, is arranged at least a portion of holding face.
Description of drawings
Fig. 1 is the schematic perspective view of structure of the end-effector of expression board carrying machine hand, the substrate supporting mechanism that this board carrying machine hand has embodiment of the present invention.
Fig. 2 is the SEM photo, is used for the CNT that illustration constitutes the present invention's maintaining part.
Fig. 3 is an experimental result of the friction force between expression end-effector and the substrate.
Fig. 4 is the mechanical hand opening time of expression in the embodiment of the invention and an experimental result of the relation between the side-play amount of wafer.
Fig. 5 is the mechanical hand opening time of expression in the embodiment of the invention and an experimental result of the relation between the side-play amount of wafer.
Fig. 6 is the figure of an evaluation result of the expression embodiment of the invention.
Fig. 7 is the schematic perspective view of structure of the board carrying machine hand of expression prior art.
Fig. 8 is the schematic perspective view of end-effector of the board carrying machine hand of prior art.
Nomenclature
14: end-effector; 14a: holding face; 15 maintaining parts; W: substrate
The specific embodiment
The substrate supporting mechanism of an embodiment of the present invention has: holding is handled upside down the holding face and the maintaining part of thing, and this maintaining part is formed by CNT, is arranged at least a portion of holding face.
In one embodiment of the present invention, the maintaining part of substrate supporting mechanism is formed by CNT, comes holding to be handled upside down thing with the top of CNT.At this moment,, can produce intermolecular interaction, be handled upside down thing to have the state of certain attractive force to be subjected to its holding to the holding mask being handled upside down between thing and the CNT.No matter in atmosphere still in a vacuum, all can produce this attractive force, and the radical of CNT is many more on the unit area, the attractive force of generation is strong more.Adopt said structure, can prevent effectively that the thing that is handled upside down on the holding face that is positioned at from sliding, thereby realize the high speed of board carrying.
In addition, because CNT has good heat endurance, therefore,, also can avoid maintaining part because of thermal metamorphism or deterioration even in hot environment, use.And, because CNT is not the same binding force of similar adhesive tape to the confining force that is handled upside down thing, therefore, can prevent because of adhesion cause be handled upside down thing move when putting damaged or carry bad.So, can guarantee suitable board carrying action.
Therefore, by the aforesaid substrate supporting mechanism, can prevent that the thing that is handled upside down on the holding face that is positioned at from sliding, and then can realize the high speed of board carrying.In addition, because can avoid maintaining part rotten, so also can guarantee correct board carrying action.
The above-mentioned thing that is handled upside down can be plate-shaped members such as semiconductor substrate or glass substrate, certainly, is handled upside down thing and is not limited thereto.In the aforesaid substrate supporting mechanism, holding face is equivalent to the upper surface of the end-effector (hand) in the Handling devices such as board carrying machine hand.In addition, both can maintaining part all be set a plurality of positions on holding face, again can be with the whole surface of holding face all as maintaining part.
Below, with reference to accompanying drawing, embodiments of the present invention are illustrated.
Fig. 1 is the scheme drawing of expression an embodiment of the present invention, and expression is with the end-effector 14 (hand) of semiconductor substrate (hereinafter to be referred as " substrate ") W as the board carrying machine hand that is handled upside down thing.The board carrying machine hand that the present invention relates to illustrates, and the board carrying machine hand of the prior art that describes with reference Fig. 7 is the same, has drive division and multi-joint arm etc., and end-effector 14 is connected with the front end of above-mentioned multi-joint arm.
End-effector 14 is forked, and its upper surface is the holding face 14a at the holding substrate W back side.And on the holding face 14a of actr 14, be provided with a plurality of maintaining parts 15 endways, each maintaining part 15 contacts with the assigned position of substrate back respectively.These holding faces 14a and maintaining part 15 constitute " substrate supporting mechanism " of the present invention.Moreover the maintaining part 15 shown in Fig. 1 forms standing shape with respect to holding face 14a, also is fine but maintaining part 15 is in conplane structure with holding face 14a.
The holding face 14a of end-effector 14 is formed by stupalith that contains good heat resistances such as aluminium oxide, silicon nitride or corrosion-resistant steel etc.Yet the formation material of this holding face 14a is not limited to this.In addition, the shape of end-effector 14 also is not limited to graphic shape, also can be other shapes.
Maintaining part 15 is made of CNT (CNT).CNT is as the material that flake graphite is rolled into tubular structure, diameter arrives tens of nm for number nm, length arrives number mm for number μ m, length-diameter ratio is big, and have physical propertys such as high conductivity, high thermal conductivity, mechanical strength height, therefore, in recent years, the researcher is that research is launched in the research center with the field of nanometer technology, wishes that its technology can be applied in wide spectrums such as quartz conductor, medical treatment, biology.As the film build method of CNT, known just like the hot CVD method.Doing in the process of CNT substrate to be set in reaction tube with the hot CVD legal system, and unstrpped gases such as methane or acetylene are being imported the inside of this reaction tube, by the substrate after the heating unstrpped gas of importing is being decomposed, thereby make carbon nano-tube oriented growth.
In the present embodiment, cut apart the substrate that is formed with carbon nano-tube film, formation has the CNT chip of definite shape, size, and this CNT chip is fixed on the assigned position of holding face 14a.The formation density of CNT is that every sq cm is more than 10,000,000,000.The shape of maintaining part (CNT chip) 15 or number is set has no particular limits in the present embodiment, on 3 positions of stipulating on the holding face 14a, all is fixed with quadrangle or circular CNT chip.In addition, the area of maintaining part 15 also is not particularly limited, can be according to the suitably settings such as the size that number, substrate W or holding face 14a are set of maintaining part 15.In addition, maintaining part 15 does not limit especially with respect to the fixing means of holding face 14a yet, can adopt Acrylic Foam Tape or known method such as adhesive agent, screw to fix.
Fig. 2 is the SEM photo of cross-sectional plane that constitutes the CNT of maintaining part 15.The formation density of CNT is about 10,000,000,000 (10 of every sq cms
10/ cm
2), highly be 50 μ m.The film forming of CNT is carried out according to following operation.
At first, (0.6Pa) and power are under the DC sputtering condition of 100W in the environment of Ar, form the thick Fe film of 5nm with sputtering method on (100) of Si substrate face, with this Fe film as catalyst layer.
Next, the substrate that will be formed with the Fe film installs in the golden face reverberatory furnace of crystal reaction tube (gold image furnace), after reaching 1.33Pa by the stove internal gas pressure after the vacuum exhaust, and the nitrogen (N of input 1000sccm flow in stove
2), be to make under 1 atmospheric condition that temperature is raised to 750 ℃ in the stove at the stove internal gas pressure then, after temperature in the stove reached 750 ℃, keeping the stove internal gas pressure still was that 1 barometric pressure is constant, supplied with the acetylene (C of 300sccm flow in stove
2H
2) gas, make CNT begin on substrate, to grow.When carbon nano tube growth after 1 minute, to carrying out exhaust and cooling in the stove, and then take out the CNT substrate.
In present embodiment as constituted above, the maintaining part 15 that is positioned on the holding face 14a is formed by CNT, and therefore, substrate W in the top holding of this CNT.At this moment, between substrate W and maintaining part (CNT) 15, intermolecular interaction can take place, substrate W is subjected to its holding with the state that holding face 14a is had certain attractive force.This attractive force is all can take place in atmosphere or in the vacuum, and the radical of CNT many more (that is, the density of CNT is big more) on the unit area, and attractive force is strong more.Thus, the substrate that can prevent from effectively to be positioned on the holding face 14a slides, and then realizes the high speed of board carrying.
A represents the silicon chip in the atmosphere and the observed reading of the friction force between each material among Fig. 3, and B represents (air pressure 4.0 * 10 in the vacuum among Fig. 3
-3The observed reading of the friction force between silicon chip Pa) and each material.Among this figure, " aluminium oxide " representative be, on aluminium oxide material plate, place 2 inches silicon chip and the friction force value that records, " CNT " representative be on the CNT that grows on the silicon chip, to place 2 inches silicon chip and the friction force value that records.In addition, " fluorine (change) rubber " among Fig. 3 representative is to be the situation on 3 fluorine (change) rubber plate of 6mm in diameter of phi with silicon slice placed.
No matter A, B are in atmosphere or in a vacuum, the friction force that " CNT " reaches under " fluorine (change) rubber " situation is all big than the friction force under " aluminium oxide " situation as can be known from Fig. 3.Therefore, for example compare with the situation of on oxidation aluminum end-effector, directly placing substrate, be provided with on the actr endways under usefulness " CNT " or " fluorine (change) rubber " maintaining part of making and the situation of coming the holding substrate by this maintaining part, friction force is bigger, the substrate that can prevent to be positioned on the end-effector slides, thereby can realize the high speed of board carrying.
In addition, according to A, B among Fig. 3 also as can be known, compare, adopt the maintaining part of making by " fluorine (change) rubber " can obtain bigger friction force with the maintaining part of making by CNT.Therefore, by adopting the maintaining part of making by " fluorine (change) rubber ", can further realize the high speed of board carrying.Yet the such elastomeric material of rubber-like is subjected to the influence of substrate or ambient temperature easily and goes bad, and in addition, also can adhere substrate sometimes and bad problem occurs carrying.
Relative therewith, CNT has good heat endurance, therefore, even when using under hot environment, also can avoid maintaining part because of thermal metamorphism or deterioration.And, because of CNT is a non-sticky to the confining force of substrate, so, can prevent from moving the generation that damages or carry bad problem when putting because of adhesion causes substrate.Therefore, no matter around temperature how, this maintaining part all can be guaranteed suitable board carrying action.
Embodiment
Below, embodiments of the invention are illustrated, in the present embodiment, use board carrying machine hand to the substrate (size of wafer (wafer): 300mm) carry test, measure the position offset of substrate with respect to end-effector.
End-effector is made by aluminium oxide, and its upper surface is equipped with the CNT system maintaining part 15 shown in Fig. 1 and Fig. 2, and the installation site of maintaining part is 3 positions shown in Figure 1, i.e. a position of 2 of the bifurcated front end positions and bifurcated base portion.What maintaining part adopted is the structure that growth has CNT on silicon chip, and the growth conditions of this CNT is identical with the growth conditions of sample shown in Figure 2.The gross area of maintaining part is 11.5cm
2
The carrying test is to allow mechanical hand thresh the action of following (1)~(5).Measurement be in atmosphere and vacuum in (air pressure: 2 * 10
-3Pa is following) in carry out.
(1) and carry out substrate delivery/reception between the elevator.
(2) measure the center of wafer with ccd sensor.
(3) carry out specified action (stretching, contractive action, 180 degree clickwises, 180 degree left-hand revolutions).
(4) wafer low speed is moved to the measuring position.
(5) measure the center of wafer with ccd sensor.
Result of a measurement is illustrated among Fig. 4 and Fig. 5.Among Fig. 4,5, A is illustrated in the result of a measurement in the atmosphere, and B represents result of a measurement in a vacuum.Round ink dot among the figure is represented the aviation value of 7 result of a measurement.As a comparison case, expression is directly to place substrate and carry out the resulting test result of same test on the end-effector of oxidation aluminum.
A, B represent the extend/retract opening time of end-effector and the relation between the substrate side-play amount among Fig. 4.Under being 1.62 seconds so more low-tach situations opening time, from embodiment and comparative example, can not judge that all skew has taken place substrate.On the other hand, when making the substrate high-speed motion when the opening time that shortens end-effector, the skew of substrate can become big in the Comparative Examples, and in the embodiment with CNT system maintaining part, even shorten to the opening time of end-effector under 1.16 seconds high-revolving like this situations, substrate also is offset hardly.No matter be in atmosphere or in a vacuum, identical like this result is all arranged.
A, B represent that end-effector carries out the opening time of 180 degree rotations and the relation between the substrate side-play amount among Fig. 5.Under being 3.31 seconds low-tach like this situations opening time, in embodiment and the comparative example, substrate all is not offset.On the other hand, when making the substrate high-speed motion when the opening time that shortens end-effector, the skew of substrate becomes big in the Comparative Examples, and in the embodiment with CNT system maintaining part, even shorten to the opening time of end-effector under 2.36 seconds high-revolving like this situations, substrate also is offset hardly.No matter be in atmosphere or in a vacuum, roughly the same like this result is all arranged.
According to present embodiment, when carrying out the action of extend/retract, can be shortened to 1.16 second from 1.62 seconds opening time, short 0.46 second of cocondensation.In addition, when carrying out 180 degree spinning movements, can be shortened to 2.36 second from 3.31 seconds opening time, short 0.95 second of cocondensation.If The above results is converted into mechanical hand from action (the picking up action) time that film forming room takes out substrate, then can be shortened to 5.23 second from 6.65 seconds opening time as shown in Figure 6 opening time, short 1.42 seconds of cocondensation.
More than, embodiments of the present invention and embodiment are illustrated, certainly, the present invention is not limited to this, the various distortion that can carry out based on technological thought of the present invention.
For example, in the above-described embodiment, the situation that a plurality of CNT system maintaining parts 15 are set on the holding face 14a with actr 14 endways is that example is illustrated, but the present invention is not limited to this, for example, also can on the whole surface of holding face or part surface, directly form carbon nano-tube film, constitute substrate supporting mechanism of the present invention thus.
In addition, in the above-described embodiment, situation about being applied in substrate supporting mechanism of the present invention on the end-effector of substrate transfer apparatus is that example is illustrated, but in addition, the present invention can also be applied in the whole base plate holding systems with specified states holding substrate such as pallet that carrying substrate uses, platform, lifting bar.
Claims (4)
1. a substrate supporting mechanism is characterized in that, comprises that holding is handled upside down the holding face and the maintaining part of thing, and this maintaining part is formed by CNT, is arranged at least a portion of described holding face.
2. substrate supporting mechanism according to claim 1 is characterized in that, all is provided with described maintaining part on a plurality of positions on the described holding face.
3. substrate supporting mechanism according to claim 2, it is characterized in that described substrate supporting mechanism is a board carrying machine hand, this board carrying machine hand has and is handled upside down the end-effector that thing carries out holding to described, and described holding face is arranged on the upper surface of end-effector.
4. substrate supporting mechanism according to claim 1 is characterized in that, the formation density of described CNT is that every sq cm is more than 10,000,000,000.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP155913/2007 | 2007-06-13 | ||
JP2007155913 | 2007-06-13 | ||
PCT/JP2008/060187 WO2008152940A1 (en) | 2007-06-13 | 2008-06-03 | Substrate supporting mechanism |
Publications (1)
Publication Number | Publication Date |
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CN101678970A true CN101678970A (en) | 2010-03-24 |
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ID=40129550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN200880019238A Pending CN101678970A (en) | 2007-06-13 | 2008-06-03 | substrate supporting mechanism |
Country Status (5)
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JP (1) | JP4824816B2 (en) |
KR (1) | KR101207594B1 (en) |
CN (1) | CN101678970A (en) |
TW (1) | TWI407529B (en) |
WO (1) | WO2008152940A1 (en) |
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JP5454286B2 (en) * | 2010-03-26 | 2014-03-26 | 東京エレクトロン株式会社 | Substrate processing equipment |
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JP6549995B2 (en) | 2016-01-15 | 2019-07-24 | 日東電工株式会社 | Mounting member |
JP6616194B2 (en) * | 2016-01-15 | 2019-12-04 | 日東電工株式会社 | Placement member |
JP2017126695A (en) * | 2016-01-15 | 2017-07-20 | 日東電工株式会社 | Method for manufacturing holder member |
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WO2018066233A1 (en) * | 2016-10-03 | 2018-04-12 | 日東電工株式会社 | Carbon nanotube aggregate |
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CN103223674B (en) * | 2012-01-26 | 2016-06-08 | 株式会社安川电机 | Transfer robot |
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US11390525B2 (en) | 2016-10-03 | 2022-07-19 | Nitto Denko Corporation | Carbon nanotube aggregate comprising a non-aligned portion |
Also Published As
Publication number | Publication date |
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KR20100029122A (en) | 2010-03-15 |
KR101207594B1 (en) | 2012-12-03 |
TW200910511A (en) | 2009-03-01 |
WO2008152940A1 (en) | 2008-12-18 |
JPWO2008152940A1 (en) | 2010-08-26 |
TWI407529B (en) | 2013-09-01 |
JP4824816B2 (en) | 2011-11-30 |
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