CN101674060A - Barron device - Google Patents
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- CN101674060A CN101674060A CN200910132444A CN200910132444A CN101674060A CN 101674060 A CN101674060 A CN 101674060A CN 200910132444 A CN200910132444 A CN 200910132444A CN 200910132444 A CN200910132444 A CN 200910132444A CN 101674060 A CN101674060 A CN 101674060A
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Abstract
The invention discloses a barron device, which comprises a first electric inductance subassembly, a second electric inductance subassembly, a first capacitance subassembly, a second capacitance subassembly, a third capacitance subassembly and a third electric inductance subassembly, wherein the first electric inductance subassembly comprises a first end and a second end; the first end is used forreceiving an input signal; the second electric inductance subassembly is provided with a third end and a forth end, and the third end is used for outputting a first outgoing signal corresponding to the input signal, and the forth end is used for outputting a second outgoing signal corresponding to the input signal; amplitude of the first outgoing signal and the second outgoing signal are the samein substantively , but phase of the two are opposite; the second electric inductance subassembly and the first electric inductance subassembly generate mutual inductance; the first capacitance subassembly is coupled to the first end; the second capacitance subassembly is coupled to the third end; the third capacitance subassembly is coupled to the forth end; the third electric inductance subassembly, the first capacitance subassembly, the second capacitance subassembly and the third capacitance subassembly are connected in series.
Description
Technical field
The invention relates to a kind of barron device, and particularly relevant for a kind of barron device with filter function.
Background technology
Along with the wireless telecommunications industry is flourish, the communication commodity constantly are studied exploitation, how to promote the effectiveness of communication commodity, become one of many targets of being pursued.The radio-frequency module of the communication device in the communication commodity comprises antenna, low noise amplifier, filter and barron device or the like.
After the antenna in the communication device received wireless signal, the single port signal of telecommunication of being exported by antenna can export barron device to.Barron device will become the dual-port signal of telecommunication to the single port electrical signal conversion, and exports to subordinate's circuit and handle.Sometimes, if the imperfect words of the filter effect of filter, barron device need have the function of filtering simultaneously.Therefore, how proposing to have the barron device of filter effect, is one of problem of endeavouring of industry.
Summary of the invention
The present invention can increase the attenuation rate of ending band (stopband) of barron device relevant for a kind of barron device, makes barron device have good filtering effect.
According to the present invention, a kind of barron device is proposed, comprise one first Inductive component, one second Inductive component, one first capacitance component, one second capacitance component, one the 3rd capacitance component and one the 3rd Inductive component.First Inductive component has one first end and one second end, and first end is in order to receive an input signal.Second Inductive component has one the 3rd end and one the 4th end, and the 3rd end corresponds to one first output signal of this input signal in order to output, and the 4th end corresponds to one second output signal of this input signal in order to output.First output signal is identical in fact with the amplitude of second output signal, and phase place is opposite in fact, and second Inductive component and first Inductive component produce mutual inductance.First capacitance component is coupled to first end.Second capacitance component is coupled to the 3rd end.The 3rd capacitance component is coupled to the 4th end.The 3rd Inductive component is connected with first capacitance component, second capacitance component and the 3rd capacitance component thrin.
For foregoing of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below:
Description of drawings
It is circuit diagram according to the barron device of one embodiment of the invention that Fig. 1 illustrates.
Fig. 2 illustrates the artificial circuit figure of barron device when differential mode of Fig. 1.
Fig. 3 illustrates the simulation result figure of the difference of vibration of first output signal of Fig. 2 and second output signal.
Fig. 4 illustrates the simulation result figure of the phase difference of first output signal of Fig. 2 and second output signal.
Fig. 5 illustrates the artificial circuit figure of barron device when common mode of Fig. 1.
The 3rd Inductive component L3 that Fig. 6 illustrates the barron device of Fig. 1 removes the artificial circuit figure of back when common mode.
Fig. 7 illustrates the simulation result figure according to the insertion loss of the artificial circuit of the barron device of Fig. 5 and Fig. 6.
Fig. 8 illustrates the circuit diagram of another embodiment that is barron device of the present invention.
Fig. 9 illustrates the artificial circuit figure of barron device when differential mode of Fig. 8.
Figure 10 illustrates the simulation result figure of the difference of vibration of first output signal of Fig. 9 and second output signal.
Figure 11 illustrates the simulation result figure of the phase difference of first output signal of Fig. 9 and second output signal.
Figure 12 illustrates the artificial circuit figure of barron device when common mode of Fig. 9.
Figure 13 illustrates the simulation result figure according to the insertion loss of the artificial circuit of the barron device of Fig. 6 and Figure 12.
Figure 14 illustrates the circuit diagram of more another embodiment that is barron device of the present invention.
The primary clustering symbol description:
100,100A, 100B: barron device
L1, L1A: first Inductive component
L2, L2A: second Inductive component
L3, L3A: the 3rd Inductive component
L4B: the 4th Inductive component
L5B: the 5th Inductive component
C1, C1A, C1B: first capacitance component
C2, C2A, C2B: second capacitance component
C3, C3A, C3B: the 3rd capacitance component
R1, R1A, R4, R4A: sending-end impedance
R2, R2A, R3, R3A, R5, R5A: load end impedance
Embodiment
The present invention proposes a kind of barron device, comprises one first Inductive component, one second Inductive component, one first capacitance component, one second capacitance component, one the 3rd capacitance component and one the 3rd Inductive component.First Inductive component has one first end and one second end, and first end is in order to receive an input signal.Second Inductive component has one the 3rd end and one the 4th end, and the 3rd end corresponds to one first output signal of this input signal in order to output, and the 4th end corresponds to one second output signal of input signal in order to output.First output signal is identical in fact with the amplitude of second output signal, and phase place is opposite in fact, and second Inductive component and first Inductive component produce mutual inductance.First capacitance component is coupled to first end.Second capacitance component is coupled to the 3rd end.The 3rd capacitance component is coupled to the 4th end.The 3rd Inductive component is connected with first capacitance component, second capacitance component and the 3rd capacitance component thrin.Now be described as follows for a plurality of embodiment.
Please refer to Fig. 1, it illustrates the circuit diagram of the barron device of one embodiment of the invention.Barron device 100 comprises the first Inductive component L1, the second Inductive component L2, the first capacitance component C1, the second capacitance component C2, the 3rd capacitance component C3 and the 3rd Inductive component L3.The first Inductive component L1 has the first end E1 and the second end E2, and the first end E1 is in order to receiving inputted signal.The second Inductive component L2 has the 3rd end E3 and the 4th end E4.The 3rd end E3 corresponds to first output signal of input signal in order to output, and the 4th end E4 corresponds to second output signal of input signal in order to output.First output signal is identical in fact with the amplitude of second output signal, and phase place is opposite in fact, and the second Inductive component L2 and the first Inductive component L1 produce mutual inductance.First output signal and second output signal are differential wave.
As shown in Figure 1, the first capacitance component C1 is coupled to the first end E1, and the second capacitance component C2 is coupled to the 3rd end E3, and the 3rd capacitance component C3 is coupled to the 4th end E4.The 3rd Inductive component L3 connects with the first capacitance component C1, the end E5 ground connection of the 3rd Inductive component L3.An end E6, the E7 ground connection of the second capacitance component C2 and the 3rd capacitance component C3.Though the 3rd Inductive component L3 of present embodiment connects with the first capacitance component C1, right the present invention is not limited to this.The 3rd Inductive component L3 also can connect with the second capacitance component C2 or the 3rd capacitance component C3.When the 3rd Inductive component L3 connects with the second capacitance component C2, the end ground connection that is not connected of the 3rd Inductive component L3 with the second capacitance component C2, and when the 3rd Inductive component L3 connects with the 3rd capacitance component C3, the end ground connection that the 3rd Inductive component L3 is not connected with the second capacitance component C2.
Please be simultaneously with reference to Fig. 1 and Fig. 2, the artificial circuit figure of the barron device that Fig. 2 illustrates Fig. 1 when differential mode (Differential Mode).When carrying out emulation, supposing that barron device 100 electrically connects with sending-end impedance R1, load end impedance R2 and load end impedance R3 carries out emulation.The end of sending-end impedance R1 is coupled to the first end E1, the other end ground connection of sending-end impedance R1.The end idol of load end impedance R2 is connected to the 3rd end E3, the other end ground connection of load end impedance R2.The end idol of load end impedance R3 is connected to the 4th end E4, the other end ground connection of load end impedance R3.
Utilize parameter substitution assembly shown in Figure 2 what follows to carry out emulation: L1=L2=3nH, L3=0.45nH, C1=1.5pF, C2=2.3pF, C3=2.7pF, R1=R2=R3=50 Ω.
Please refer to Fig. 3, it illustrates the simulation result figure of the difference of vibration of first output signal of Fig. 2 and second output signal.As shown in Figure 3, in frequency band 2GHz～3GHz, demonstrated by the curve 102 of the amplitude balance of barron device 100, the difference of vibration of first output signal and second output signal (Amplitude im-balance) is about 1dB to 1.2dB, in range of allowable error.
Please refer to Fig. 4, it illustrates the simulation result figure of the phase difference of first output signal of Fig. 2 and second output signal.As shown in Figure 4, in frequency band 2GHz～3GHz, demonstrated by the curve 104 of the phase equilibrium of barron device 100, the phase difference of first output signal and second output signal is about 3 degree between 4.5 degree, in range of allowable error.
Please refer to Fig. 5, the artificial circuit figure of its barron device that illustrates Fig. 1 when common mode (Common Mode).When carrying out emulation, supposing that barron device 100 electrically connects with sending-end impedance R4 and load end impedance R5 carries out emulation.The end of sending-end impedance R4 couples the first end E1, the other end ground connection of sending-end impedance R4.The end E6 of the second capacitance component C2 and the end E7 of the 3rd capacitance component C3 are coupled to the two ends of load end impedance R5 respectively.
Please refer to Fig. 6, after it illustrates the 3rd Inductive component L3 with the barron device of Fig. 1 and removes, the artificial circuit figure when common mode (Common Mode).
Please refer to Fig. 7, it illustrates the simulation result figure according to the insertion loss (InsertionLoss) of the artificial circuit of the barron device of Fig. 5 and Fig. 6.Curve 108 corresponds to Fig. 5, and curve 106 corresponds to Fig. 6.The curve 108 of the insertion of barron device 100 loss has a zero point (zero) near frequency 7.5GHz, and makes near zero point the attenuation rate of ending band greater than the attenuation rate of being with of ending of curve 106.So, the barron device 100 of present embodiment has filter effect really, and its filter effect can remedy the deficiency of other filter.Again, can be via the inductance value of adjusting the 3rd above-mentioned in the barron device 100 Inductive component L3, to adjust the frequency at zero point.
So, the barron device of present embodiment is not limited to only use capacitance component of Inductive component series connection, also can use a plurality of Inductive components to come respectively and a plurality of capacitances in series.
Please refer to Fig. 8, it illustrates the circuit diagram of another embodiment of barron device of the present invention.Barron device 100A comprises the first Inductive component L1A, the second Inductive component L2A, the first capacitance component C1A, the second capacitance component C2A, the 3rd capacitance component C3A, the 3rd Inductive component L3A and the 4th Inductive component L4A.The first Inductive component L1A has the first end E1A and the second end E2A, and the first end E1A is in order to receiving inputted signal, the second end E2A ground connection.The second Inductive component L2A has the 3rd end E3A and the 4th end E4A.The first capacitance component C1A is coupled to the first end E1A, the end E5A ground connection of the first capacitance component C1A.The second capacitance component C2A is coupled to the 3rd end E3A, and the 3rd capacitance component C3A is coupled to the 4th end E4A.The 3rd Inductive component L3A connects with the second capacitance component C2A, the end E6A ground connection of the 3rd Inductive component L3A.The 4th Inductive component L4A connects with the 3rd capacitance component C3A, the end E7A ground connection of the 4th Inductive component L4A.
Please be simultaneously with reference to Fig. 8 and Fig. 9, Fig. 9 illustrates the artificial circuit figure of barron device when differential mode of Fig. 8.When carrying out emulation, supposing that barron device 100A and sending-end impedance R1A, load end impedance R2A and load end impedance R3A electrically connect carries out emulation.The end of sending-end impedance R1A is coupled to the first end E1A, the other end ground connection of sending-end impedance R1A.The end of load end impedance R2A is coupled to the 3rd end E3A, the other end ground connection of load end impedance R2A.The end of load end impedance R3A is coupled to the 4th end E4A, the other end ground connection of load end impedance R3A.
Utilize parameter substitution assembly shown in Figure 9 what follows to carry out emulation: L1A=3nH, L2A=3nH, L3A=0.45nH, L4A=0.175nH, R1A=R2A=R3A=50 Ω, C1A=1.5pF, C2A=2.3pF, C3A=2.7pF.
Please refer to Figure 10, it illustrates the simulation result figure of the difference of vibration of first output signal of Fig. 9 and second output signal.In frequency band 2GHz～3GHz, demonstrate by the curve 110 of the amplitude balance of barron device 100A, the difference of vibration of first output signal and second output signal is about 0.4dB to-0.9dB.In range of allowable error.
Please refer to Figure 11, it illustrates the simulation result figure of the phase difference of first output signal of Fig. 9 and second output signal.As shown in figure 11, in frequency band 2GHz～3GHz, demonstrated by the curve 112 of the phase equilibrium of barron device 100A, the phase difference of first output signal and second output signal is about 1.5 degree between-1.5 degree, in range of allowable error.
Please refer to Figure 12, it illustrates the artificial circuit figure of barron device when common mode of Fig. 8.When carrying out emulation, supposing that barron device 100A and sending-end impedance R4A and load end impedance R5A electrically connect carries out emulation.The end of sending-end impedance R4A couples the first end E1A, the other end ground connection of sending-end impedance R4A.The end E6A of the 3rd Inductive component L3A and the end E7A of the 4th Inductive component L4A are coupled to the two ends of load end impedance R5A respectively.
Please refer to Figure 13, it illustrates the simulation result figure according to the insertion loss of the artificial circuit of the barron device of Fig. 6 and Figure 12.Curve 114 corresponds to Fig. 6, and curve 118 corresponds to Figure 12.The insertion of barron device 100A loss curve 118 has a zero point near frequency 5.7GHz, and makes near zero point the attenuation rate of ending band greater than the attenuation rate of being with of ending of curve 116.Again, can be via adjusting the 3rd above-mentioned among barron device 100A Inductive component L3 and the inductance value of the 4th Inductive component L4, to adjust the frequency at zero point.
Please refer to Figure 14, it illustrates more another embodiment of barron device of the present invention.Different with Fig. 1 is that barron device 100B more comprises the 4th Inductive component L4B and the 5th Inductive component L5B.The 4th Inductive component L4B connects with the second capacitance component C2, the end E6B ground connection of the 4th Inductive component L4B.The 5th Inductive component L5B connects with the 3rd capacitance component C3, the end E7B ground connection of the 5th Inductive component L5B.As if the 3rd Inductive component L3 of present embodiment, when the 4th Inductive component L4B is inequality, can in the frequency response chart that inserts loss, produce two zero points that are positioned at different frequency.
Barron device of the present invention has good filtering effect, can increase the attenuation rate of ending band of barron device, make barron device have good filtering effect, can be in order to remedy the deficiency of filter, make applied communication product have better effective utilization, so have the market competitiveness.
In sum, though the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention.The persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is as the criterion when looking the accompanying Claim book person of defining.
Claims (10)
1. barron device comprises:
One first Inductive component has one first end and one second end, and this first end is in order to receive an input signal; And
One second Inductive component, have one the 3rd end and one the 4th end, the 3rd end corresponds to one first output signal of this input signal in order to output, the 4th end corresponds to one second output signal of this input signal in order to output, this first output signal is identical in fact with the amplitude of this second output signal, phase place is opposite in fact, and this second Inductive component and this first Inductive component produce mutual inductance;
One first capacitance component is coupled to this first end;
One second capacitance component is coupled to the 3rd end;
One the 3rd capacitance component is coupled to the 4th end; And
One the 3rd Inductive component is connected with this first capacitance component, this second capacitance component and the 3rd capacitance component thrin.
2. barron device as claimed in claim 1, wherein the 3rd Inductive component is connected with this first capacitance component, and an end ground connection of the 3rd Inductive component, so that produce a zero point that is positioned at a frequency in the frequency response of the insertion of this barron device loss.
3. barron device as claimed in claim 1, wherein the 3rd Inductive component is connected with this second capacitance component, and an end ground connection of the 3rd Inductive component.
4. barron device as claimed in claim 1, wherein the 3rd Inductive component is connected with the 3rd capacitance component, and an end ground connection of the 3rd Inductive component.
5. barron device as claimed in claim 1 more comprises one the 4th Inductive component, and wherein, the 3rd Inductive component is connected with this second capacitance component, and the 4th Inductive component is connected with the 3rd capacitance component.
6. barron device as claimed in claim 5, wherein, the inductance value of the 3rd Inductive component and the 4th Inductive component is identical.
7. barron device as claimed in claim 5, wherein, the inductance value of the 3rd Inductive component and the 4th Inductive component is inequality.
8. barron device as claimed in claim 1, more comprise one the 4th Inductive component and one the 5th Inductive component, wherein, the 3rd Inductive component is connected with this first capacitance component, the 4th Inductive component is connected with this second capacitance component, and the 5th Inductive component is connected with the 3rd capacitance component.
9. barron device as claimed in claim 8, wherein, the inductance value of the 4th Inductive component and the 5th Inductive component is identical.
10. barron device as claimed in claim 9, wherein, the inductance value of the 4th Inductive component and the 3rd Inductive component is inequality, so that produce two zero points that are positioned at different frequency in the frequency response of the insertion of this barron device loss.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13650408P | 2008-09-10 | 2008-09-10 | |
| US61/136,504 | 2008-09-10 |
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| Publication Number | Publication Date |
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| CN101674060A true CN101674060A (en) | 2010-03-17 |
| CN101674060B CN101674060B (en) | 2012-04-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009101324562A Active CN101673618B (en) | 2008-09-10 | 2009-03-26 | A double-inductance structure |
| CN200910132445.4A Active CN101673865B (en) | 2008-09-10 | 2009-03-27 | A barron device manufactured by using integrated passive component process |
| CN 200910132443 Active CN101673864B (en) | 2008-09-10 | 2009-03-27 | A barron device manufactured by using integrated passive component process |
| CN200910132444XA Active CN101674060B (en) | 2008-09-10 | 2009-03-27 | Barron device |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009101324562A Active CN101673618B (en) | 2008-09-10 | 2009-03-26 | A double-inductance structure |
| CN200910132445.4A Active CN101673865B (en) | 2008-09-10 | 2009-03-27 | A barron device manufactured by using integrated passive component process |
| CN 200910132443 Active CN101673864B (en) | 2008-09-10 | 2009-03-27 | A barron device manufactured by using integrated passive component process |
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| CN (4) | CN101673618B (en) |
| TW (4) | TWI360254B (en) |
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| US8791775B2 (en) * | 2010-03-30 | 2014-07-29 | Stats Chippac, Ltd. | Semiconductor device and method of forming high-attenuation balanced band-pass filter |
| US9312060B2 (en) * | 2012-09-20 | 2016-04-12 | Marvell World Trade Ltd. | Transformer circuits having transformers with figure eight and double figure eight nested structures |
| US9431473B2 (en) * | 2012-11-21 | 2016-08-30 | Qualcomm Incorporated | Hybrid transformer structure on semiconductor devices |
| CN103078161B (en) * | 2012-12-17 | 2015-03-04 | 江苏大学 | Marchand balun provided with center tap and used for providing direct-current bias |
| US10002700B2 (en) | 2013-02-27 | 2018-06-19 | Qualcomm Incorporated | Vertical-coupling transformer with an air-gap structure |
| US9634645B2 (en) | 2013-03-14 | 2017-04-25 | Qualcomm Incorporated | Integration of a replica circuit and a transformer above a dielectric substrate |
| CN103337682B (en) * | 2013-07-24 | 2015-03-25 | 东南大学 | Broadband, low-loss and high-balance-degree on-chip Balun |
| US9449753B2 (en) | 2013-08-30 | 2016-09-20 | Qualcomm Incorporated | Varying thickness inductor |
| CN103606726B (en) * | 2013-11-27 | 2016-06-08 | 东南大学 | A kind of wide-band transformer Ba Lun with center open stub |
| TWI549425B (en) * | 2014-04-07 | 2016-09-11 | 國立臺灣科技大學 | Balun device |
| TWI545893B (en) | 2014-04-07 | 2016-08-11 | 國立臺灣科技大學 | Balun device |
| US9906318B2 (en) | 2014-04-18 | 2018-02-27 | Qualcomm Incorporated | Frequency multiplexer |
| US20170243690A1 (en) * | 2016-02-22 | 2017-08-24 | Mediatek Inc. | Composite inductor structure |
| TWI632657B (en) | 2016-08-05 | 2018-08-11 | 瑞昱半導體股份有限公司 | Semiconductor element |
| TWI612697B (en) | 2016-08-05 | 2018-01-21 | 瑞昱半導體股份有限公司 | Semiconductor element |
| TWI627644B (en) | 2016-08-05 | 2018-06-21 | 瑞昱半導體股份有限公司 | Semiconductor element |
| CN107731485B (en) * | 2016-08-12 | 2020-08-18 | 瑞昱半导体股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
| CN110034368A (en) * | 2019-04-24 | 2019-07-19 | 南京理工大学 | LTCC modified delamination helix formula balun power splitter |
| CN116566329A (en) * | 2022-01-27 | 2023-08-08 | 锐石创芯(深圳)科技股份有限公司 | Balun, radio frequency front end chip and radio frequency front end module |
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| CN1180444A (en) * | 1995-04-05 | 1998-04-29 | 齐罗发射技术公司 | Two-stage high voltage inductor |
| US6097273A (en) * | 1999-08-04 | 2000-08-01 | Lucent Technologies Inc. | Thin-film monolithic coupled spiral balun transformer |
| US6714113B1 (en) * | 2000-11-14 | 2004-03-30 | International Business Machines Corporation | Inductor for integrated circuits |
| CN1240084C (en) * | 2002-01-18 | 2006-02-01 | 达方电子股份有限公司 | High-Q inductor structure |
| DE102005046451B4 (en) * | 2005-09-28 | 2021-02-25 | Snaptrack, Inc. | Circuit and component with the circuit |
| US7187179B1 (en) * | 2005-10-19 | 2007-03-06 | International Business Machines Corporation | Wiring test structures for determining open and short circuits in semiconductor devices |
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| CN201017976Y (en) * | 2007-03-20 | 2008-02-06 | 浙江大学 | Broadband balun based on right-left hand composite transmission lines |
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2008
- 2008-12-08 TW TW97147734A patent/TWI360254B/en active
- 2008-12-09 TW TW097147869A patent/TWI368352B/en active
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- 2009-03-27 CN CN 200910132443 patent/CN101673864B/en active Active
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Also Published As
| Publication number | Publication date |
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| CN101673864B (en) | 2013-07-17 |
| TW201011973A (en) | 2010-03-16 |
| CN101673865A (en) | 2010-03-17 |
| CN101673864A (en) | 2010-03-17 |
| TW201011972A (en) | 2010-03-16 |
| TWI365463B (en) | 2012-06-01 |
| TWI366982B (en) | 2012-06-21 |
| TW201012059A (en) | 2010-03-16 |
| CN101673865B (en) | 2014-02-19 |
| CN101674060B (en) | 2012-04-18 |
| TWI360254B (en) | 2012-03-11 |
| CN101673618B (en) | 2012-01-25 |
| TW201011785A (en) | 2010-03-16 |
| CN101673618A (en) | 2010-03-17 |
| TWI368352B (en) | 2012-07-11 |
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