CN101651125B - Light-emitting diode base structure with buried capacitor - Google Patents
Light-emitting diode base structure with buried capacitor Download PDFInfo
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- CN101651125B CN101651125B CN2008101346410A CN200810134641A CN101651125B CN 101651125 B CN101651125 B CN 101651125B CN 2008101346410 A CN2008101346410 A CN 2008101346410A CN 200810134641 A CN200810134641 A CN 200810134641A CN 101651125 B CN101651125 B CN 101651125B
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- light
- emitting diode
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- buried capacitor
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Abstract
The invention relates to a light-emitting diode base structure with a buried capacitor, which comprises a body, at least one pair of metallic layers, at least one dielectric layer and at least two conductive channels, wherein the body is an insulating base; the metallic layers are arranged in the body; the dielectric layer is formed between the pair of metallic layers to form the buried capacitor; and the conductive channels are electrically connected with the metallic layers respectively. When the light-emitting diode base structure is also electrically connected with a resistor, a resistor-capacitor delay circuit can be formed, and a phase delay effect can be achieved when an alternating current power supply is used so as to control the turn-on time of one of two light-emitting diode groups connected in parallel, and the problem that the flicker of light-emitting diodes when the alternating current power supply is used can be improved.
Description
Technical field
The present invention relates to a kind of light-emitting diode (be diode, hereinafter all be called diode) base structure, particularly relate to a kind of light-emitting diode base structure with buried capacitor of AC power that be applied to use as power supply with buried capacitor.
Background technology
Because the led technology development is rapid and be tending towards ripe, and advantages such as light-emitting diode has, and volume is little, power consumption is low, reaction rate is fast, the life-span is long with vibration strength is good, make light-emitting diode replace traditional Halogen lamp LED, fluorescent tube etc. gradually, just like become a kind of emerging light source in the following lighting device.
But because being designed to only when forward bias voltage drop, just be able to be electrically conducted of light-emitting diode and luminous, if make when using the AC power driven for emitting lights diode of civil power, because the periodicity of AC power, therefore make that the phenomenon of flicker appears in light-emitting diode, and the difficulty that generation is used can only use the DC power supply driving to light so present most of light-emitting diode all is restricted to.
Invent disclosed a kind of light emitting diode illuminating apparatus in light emitting diode illuminating apparatus that the I287607 alternating current uses and the luminescence unit wherein as the Republic of China, use an AC power to be its supply of electric power source, and AC power has a forward voltage and a reverse voltage, light emitting diode illuminating apparatus comprises: a luminescence unit, luminescence unit comprises one first LED wafer and one second LED wafer at least, LED wafer is that parallel connection and both conducting directions are opposite, forward voltage is in order to conducting first LED wafer, and reverse voltage is in order to conducting second LED wafer.
Two LED wafer that above-mentioned prior art uses are connected with parallel way, and make that two LED wafer conducting directions are opposite, therefore when input ac power, two LED wafer are will one after the other luminous, reach and can directly use AC power to throw light on.
Figure 1A is AC power AC and the critical voltage Vth graph of a relation when having known light-emitting diode base structure input ac power now.When light-emitting diode was worked, in fact the magnitude of voltage of driven for emitting lights diode must just be able to the driven for emitting lights led lighting greater than the critical voltage Vth of light-emitting diode.Therefore when the polarity of voltage of AC power switches, need experience first-class treat time Tth, wait for that the voltage rising reaches critical voltage Vth, light-emitting diode just can be lighted and luminous.
Figure 1B is the lumination of light emitting diode sequential chart when having known light-emitting diode base structure input ac power AC now.When use two LEDs 1, when LED2 is luminous, have first-class among its fluorescent lifetime T1, the T2 and treat time Tth, therefore when replacing, two LEDs 1, LED2 can produce the light non-continuous event when luminous, and cause the problem of glimmering, limit LED 1, LED2 and be applied in application under the AC power AC environment.
This shows that above-mentioned existing light-emitting diode base structure obviously still has inconvenience and defective, and demands urgently further being improved in structure and use.In order to solve the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and common product does not have appropriate structure to address the above problem, this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of novel light-emitting diode base structure with buried capacitor, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Because the defective that above-mentioned existing light-emitting diode base structure exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of novel light-emitting diode base structure with buried capacitor, can improve general existing light-emitting diode base structure, make it have more practicality.Through constantly research, design, and, create the present invention who has practical value finally through after studying sample and improvement repeatedly.
Summary of the invention
The objective of the invention is to, overcome the defective that existing light-emitting diode base structure exists, and provide a kind of novel light-emitting diode base structure with buried capacitor, technical problem to be solved is to make it bury two metal levels underground in the body of light-emitting diode, and constitute buried capacitor in wherein forming dielectric layer, can combine with non-essential resistance by buried capacitor, and form the resistance-capacitance delay circuit.If when a plurality of light-emitting diodes are incorporated into light-emitting diode base structure and use AC power, originally produce the problem of flicker because of the voltage polarity reversal of AC power, can control the initial driving time of some light-emitting diode respectively by the use delay circuit, and then improve the phenomenon of LED flash.
The object of the invention to solve the technical problems realizes by the following technical solutions.A kind of light-emitting diode base structure with buried capacitor according to the present invention proposes is characterized in that it comprises: a body, and it is an insulating base; At least one pair of metal level, it is arranged in this body; At least one dielectric layer, it is formed at this between the metal level; And at least two conductive channels, it electrically connects those metal levels respectively.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid light-emitting diode base structure with buried capacitor, wherein said body are piled up by a plurality of ceramic layers and form.
Aforesaid light-emitting diode base structure with buried capacitor, wherein said body has a groove.
Aforesaid light-emitting diode base structure with buried capacitor, the material of wherein said body are an aluminium oxide, a quartz, a silicon dioxide, a calcium zirconate or a glass ceramics.
Aforesaid light-emitting diode base structure with buried capacitor, the material of wherein said dielectric layer are a silicon dioxide, a barium titanate or a ceramic layer.
Aforesaid light-emitting diode base structure with buried capacitor, its its further have at least one pair of electrode, and a first end of each this electrode is exposed to a groove floor of this body, a second end of each this electrode is embedded in this body again, and wherein this second end and this conductive channel electric connection.
The present invention compared with prior art has tangible advantage and beneficial effect.By technique scheme, the light-emitting diode base structure that the present invention has buried capacitor has following advantage and beneficial effect at least:
1, light-emitting diode base structure has imbedded capacitance, therefore need not connect extra capacity cell again.
2, electric capacity is buried underground in making the light-emitting diode base structure processing procedure, makes cost reduction and capacitance to design on demand.
3,, will make the light-emitting diode base structure range of application more extensive because of having buried capacitor.
In sum, the present invention is a kind of light-emitting diode base structure with buried capacitor, and it comprises: body; At least one pair of metal level; At least one dielectric layer; And at least two conductive channel.Body is an insulating base, and metal level is arranged in the body, and dielectric layer is formed at this to metal interlevel, and becomes buried capacitor, and conductive channel electrically connects with metal level respectively again.When light-emitting diode base structure electrically connects with a resistance again, can form the resistance-capacitance delay circuit, and can when using AC power, produce the effect of phase delay, in order to control two groups of light-emitting diode group parallel with one another, opening time of one group wherein, can improve the problem of LED flash when using AC power.The present invention has above-mentioned plurality of advantages and practical value, no matter it all has bigger improvement on product structure or function, obvious improvement is arranged technically, and produced handy and practical effect, and more existing light-emitting diode base structure has the outstanding effect of enhancement, thereby being suitable for practicality more, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Figure 1A is AC power and the critical voltage graph of a relation when having known light-emitting diode base structure input ac power now.
Figure 1B is the lumination of light emitting diode sequential chart when having known light-emitting diode base structure input ac power now.
Fig. 2 implements illustration for a kind of light-emitting diode base structure with buried capacitor of the present invention.
Fig. 3 is for implementing illustration one along analysing and observe of A-A hatching among Fig. 2.
Fig. 4 is for implementing illustration two along analysing and observe of A-A hatching among Fig. 2.
Fig. 5 A of the present inventionly a kind ofly has the light-emitting diode base structure of buried capacitor in conjunction with light-emitting diode embodiment.
Fig. 5 B is the equivalent circuit diagram of circuit structure among Fig. 5 A.
AC power when Fig. 5 C is Fig. 5 B input ac power and critical voltage graph of a relation.
Lumination of light emitting diode sequential chart when Fig. 5 D is Fig. 5 B input ac power.
10: light-emitting diode base structure with buried capacitor
11: body 12: metal level
13: dielectric layer 14: conductive channel
15: groove 16: electrode
161: first end 162: the second end
17: power electrode Ci: buried capacitor
AC: AC power R: resistance
LED1, LED-2, LED3, LED-4: light-emitting diode
T1, T2, T3, T4: fluorescent lifetime Tth: stand-by period
Vth: critical voltage T: time of delay
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to its embodiment of the light-emitting diode base structure with buried capacitor, structure, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
Relevant aforementioned and other technology contents, characteristics and effect of the present invention can be known to present in the following detailed description that cooperates with reference to graphic preferred embodiment.By the explanation of embodiment, when can being to reach technological means that predetermined purpose takes and effect to get one more deeply and concrete understanding to the present invention, yet appended graphic only provide with reference to the usefulness of explanation, be not to be used for the present invention is limited.
Fig. 2 implements illustration for a kind of light-emitting diode base structure 10 with buried capacitor Ci of the present invention.Fig. 3 is for implementing illustration one along analysing and observe of A-A hatching among Fig. 2.Fig. 4 is for implementing illustration two along analysing and observe of A-A hatching among Fig. 2.Fig. 5 A of the present inventionly a kind ofly has the light-emitting diode base structure 10 of buried capacitor Ci in conjunction with LED 1, LED-2, LED3, LED-4 embodiment.Fig. 5 B is the equivalent circuit diagram of circuit structure among Fig. 5 A.AC power AC when Fig. 5 C is Fig. 5 B input ac power AC and critical voltage Vth graph of a relation.The luminous sequential chart of LED 1, LED-2, LED3, LED-4 when Fig. 5 D is Fig. 5 B input ac power AC.
See also Fig. 2 and shown in Figure 3, present embodiment is a kind of light-emitting diode base structure 10 with buried capacitor Ci, comprising: a body 11; At least one pair of metal level 12; At least one dielectric layer 13; And at least two conductive channel 14.
Above-mentioned body 11, it has constituted the encapsulation of the light-emitting diode base structure 10 with buried capacitor Ci, and body 11 is an insulating base, wherein an enforcement aspect can be piled up by a plurality of ceramic layers and be formed, and the material of body 11 can be an aluminium oxide, a quartz, a silicon dioxide, a calcium zirconate or a pottery.
See also Fig. 3 and shown in Figure 4, metal level 12 is arranged in the body 11, and the light-emitting diode base structure 10 with buried capacitor Ci has comprised a pair of or two pairs of metal levels 12.Each can be embedded in arbitrary position in the body 11 to metal level 12, again each to two metal levels 12 in the metal level 12 for be arrangeding in parallel up and down.When a plurality of ceramic layers pile up formation body 11, can easily metal level 12 be inserted between different ceramic layers in regular turn, to form buried capacitor Ci.
Above-mentioned dielectric layer 13 is formed at each between the metal level 12.Therefore when being embedded with a pair of in the light-emitting diode base structure 10 with buried capacitor Ci or during two pairs of metal levels 12, can having one or two dielectric layers 13 respectively in the body 11, usefulness is so that each is to two metal levels, 12 electrical isolation in the metal level 12.And the material of dielectric layer 13 can be used an aluminium oxide, a quartz, a silicon dioxide, a calcium zirconate or a pottery.When dielectric layer 13 is arranged between two metal levels 12, make the buried capacitor Ci that has formed metal level 12-dielectric layer 13-metal level 12 in the light-emitting diode base structure.And when dielectric layer uses with the identical material of body, on processing procedure, will have more efficient.
Above-mentioned conductive channel 14 is formed in the body 11, and can be in order to electrically connect with each metal level 12 respectively, with the electrode as buried capacitor Ci.When being embedded with pair of metal layer 12 in the light-emitting diode base structure 10 with buried capacitor Ci, can have at least two conductive channels 14 in the body 11, in order to electrically connect with each metal level 12 respectively.Same, when being embedded with two pairs of metal levels 12 in the body 11, will having at least four conductive channels 14 and electrically connect with each metal level 12 respectively.When having more than one buried capacitor Ci in the body 11, can connect with parallel connection or series system by the setting of conductive channel 14, in order to the regulation and control total capacitance value.
The capacitance that relevant buried capacitor Ci is produced, can calculate it via following equation:
C＝(ε0×A)/D
Wherein, C is a buried capacitor Ci capacitance, and ε 0 is the vacuum medium dielectric constant microwave medium, and A is that each sheet metal level 12 area and D are 12 distances of two metal levels.For instance, when two metal levels 12 have than large tracts of land apart near more or metal level 12, can accumulate more electric charge, and make buried capacitor Ci produce bigger capacitance.Otherwise if metal level 12 distances are far away more or metal level 12 areas are less, then the electric charge cumulative amount is few, makes buried capacitor Ci form less capacitance.
In addition, the light-emitting diode base structure 10 with buried capacitor Ci can further have at least one pair of electrode 16 again, and each electrode 16 has a first end 161 and a second end 162.Use when routing to be provided groove 15 bottom surfaces that each first end 161 is exposed to body 11, and 162 of each the second ends are embedded in the body 11, and wherein a second end 162 electrically connects by conductive channel 14 wherein and a wherein metal level 12 among the buried capacitor Ci.Wherein a conductive channel 14 will be connected with external power source electrode 17 again, so that the light-emitting diode base structure 10 of power drives buried capacitor Ci to be provided.
In order to prove absolutely the effect of present embodiment, be illustrated especially exemplified by following application examples:
See also shown in Fig. 5 A and Fig. 5 B, when having the light-emitting diode base structure 10 of buried capacitor Ci, four LEDs 1, LED-2, LED3, LED-4 will be placed in the groove 15 of body 11 as four LEDs 1, LED-2, LED3, the solid crystalline substance of LED-4.And form two groups of light-emitting diode group parallel with one another, each light-emitting diode group all is made of LED-2, the LED-4 of LED 1, LED3 and a negative sense conducting of a forward conduction again.
When using an AC power AC, wherein one group of LED 3, LED4 and routing and wherein first end 161 electric connections of an electrode 16.And wherein the second end 162 of an electrode 16 is electrical connected by the wherein metal level 12 with buried capacitor Ci of a conductive channel 14 wherein, will make that so wherein a light-emitting diode group LED3, LED4 and buried capacitor Ci are electrical connected.Another group LED 1, LED2 then are not electrical connected with buried capacitor Ci.
By buried capacitor Ci with after a resistance R combines, can form resistance R-capacitance delays circuit, the capacitance of buried capacitor Ci can be regulated and control by the spacing and the area of metal level 12 again, make that resistance R-capacitance delays circuit can be by the capacitance of regulation and control buried capacitor Ci, to produce different phase retardations, for example: 45 degree, 90 degree.
Shown in Fig. 5 C, as input one AC power AC to light-emitting diode base structure 10 time with buried capacitor Ci, two LEDs 1, the LED-2 that is not connected wherein with the resistance-capacitance delay circuit, fluorescent lifetime is T1, T2.And other two LEDs 3, LED-4 are because the cause of connect with the resistance-capacitance delay circuit, feasible will be through after the time of delay T, just be switched on and luminous, so its fluorescent lifetime will be T3, T4.
See also shown in Fig. 5 D, because LED 1, bright dipping time T 1, T2 and the LED 3 of LED-2, the bright dipping time T 3 of LED-4, T4 cooperatively interact, so can make when arbitrary LED 1, LED-2, LED3, when LED-4 is in stand-by period Tth, other LED 1, LED-2, LED3, LED-4 still can continue luminous, so integral body will present a permanent bright state.So after LED 1, LED-2, LED3, LED-4 and the light-emitting diode base structure 10 with buried capacitor Ci combine, can improve the scintillation when using AC power AC.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (4)
1. light-emitting diode base structure with buried capacitor is characterized in that it comprises:
One body, it is an insulating base, and this body has a groove;
At least one pair of metal level, it is arranged in this body;
At least one dielectric layer, it is formed at this between the metal level;
At least two conductive channels, it electrically connects those metal levels respectively; And
At least one pair of electrode, an and first end of each this electrode is exposed to a groove floor of this groove, a second end of each this electrode is embedded in this body again, and wherein this second end and this conductive channel electrically connect.
2. the light-emitting diode base structure with buried capacitor according to claim 1 is characterized in that wherein said body is piled up by a plurality of ceramic layers to form.
3. the light-emitting diode base structure with buried capacitor according to claim 1, the material that it is characterized in that wherein said body are an aluminium oxide, a quartz, a silicon dioxide, a calcium zirconate or a glass ceramics.
4. the light-emitting diode base structure with buried capacitor according to claim 1, the material that it is characterized in that wherein said dielectric layer are a silicon dioxide, a barium titanate or a ceramic layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2008101346410A CN101651125B (en) | 2008-08-12 | 2008-08-12 | Light-emitting diode base structure with buried capacitor |
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| CN2008101346410A CN101651125B (en) | 2008-08-12 | 2008-08-12 | Light-emitting diode base structure with buried capacitor |
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| CN101651125A CN101651125A (en) | 2010-02-17 |
| CN101651125B true CN101651125B (en) | 2011-07-06 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1662130A (en) * | 2004-02-26 | 2005-08-31 | 阿尔卑斯电气株式会社 | Flexible printed circuit board |
| US20080061427A1 (en) * | 2006-09-11 | 2008-03-13 | Industrial Technology Research Institute | Packaging structure and fabricating method thereof |
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- 2008-08-12 CN CN2008101346410A patent/CN101651125B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1662130A (en) * | 2004-02-26 | 2005-08-31 | 阿尔卑斯电气株式会社 | Flexible printed circuit board |
| US20080061427A1 (en) * | 2006-09-11 | 2008-03-13 | Industrial Technology Research Institute | Packaging structure and fabricating method thereof |
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| Publication number | Publication date |
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| CN101651125A (en) | 2010-02-17 |
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