CN101646801A - Method for low temperature thermal cleaning - Google Patents
Method for low temperature thermal cleaning Download PDFInfo
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- CN101646801A CN101646801A CN200880009915A CN200880009915A CN101646801A CN 101646801 A CN101646801 A CN 101646801A CN 200880009915 A CN200880009915 A CN 200880009915A CN 200880009915 A CN200880009915 A CN 200880009915A CN 101646801 A CN101646801 A CN 101646801A
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- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000004140 cleaning Methods 0.000 title abstract description 23
- 239000000203 mixture Substances 0.000 claims abstract description 49
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 41
- 239000011737 fluorine Substances 0.000 claims abstract description 40
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 238000003860 storage Methods 0.000 claims abstract description 27
- 239000007789 gas Substances 0.000 claims abstract description 25
- 239000001301 oxygen Substances 0.000 claims abstract description 21
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 239000008246 gaseous mixture Substances 0.000 claims description 75
- 239000000463 material Substances 0.000 claims description 52
- 230000008569 process Effects 0.000 claims description 20
- 238000002203 pretreatment Methods 0.000 claims description 16
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 9
- ZEIYBPGWHWECHV-UHFFFAOYSA-N nitrosyl fluoride Chemical compound FN=O ZEIYBPGWHWECHV-UHFFFAOYSA-N 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 6
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 6
- 239000005360 phosphosilicate glass Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000007795 chemical reaction product Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 229910004143 HfON Inorganic materials 0.000 claims description 3
- WUSYAIQLOOSERH-UHFFFAOYSA-N N=O.F Chemical compound N=O.F WUSYAIQLOOSERH-UHFFFAOYSA-N 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 229910018503 SF6 Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910003071 TaON Inorganic materials 0.000 claims description 3
- 229910010282 TiON Inorganic materials 0.000 claims description 3
- 229910008807 WSiN Inorganic materials 0.000 claims description 3
- 229910008828 WSiO Inorganic materials 0.000 claims description 3
- 229910006252 ZrON Inorganic materials 0.000 claims description 3
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- OMBRFUXPXNIUCZ-UHFFFAOYSA-N dioxidonitrogen(1+) Chemical compound O=[N+]=O OMBRFUXPXNIUCZ-UHFFFAOYSA-N 0.000 claims description 3
- VHFBTKQOIBRGQP-UHFFFAOYSA-N fluoro nitrate Chemical compound [O-][N+](=O)OF VHFBTKQOIBRGQP-UHFFFAOYSA-N 0.000 claims description 3
- 239000013081 microcrystal Substances 0.000 claims description 3
- 239000001272 nitrous oxide Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000005368 silicate glass Substances 0.000 claims description 3
- 229960001866 silicon dioxide Drugs 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 3
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910004541 SiN Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910008830 WSiOx Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000001149 thermolysis Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Methods and apparatus for cleaning undesired substances from a surface in a semiconductor processing chamber. A gas mixture containing a fluorine source and an oxygen source is pre-treated to containactive fluorine species. The pre-treated mixture is stored for a time in a gas storage device, and then introduced to a semiconductor processing chamber. Prior to introduction of the pre-treated gas,the temperature in the chamber is lowered to a temperature equal to or iower than the normal operating temperature. Undesired substances are removed or cleaned through chemical reaction with the pre-treated gas mixture, without the generation of a plasma or a high temperature condition in the chamber.
Description
The intersection document of related application
The application requires the U.S. Provisional Application 60/908 of submission on March 27th, 2007,381, the U.S. Provisional Application of submitting on July 23rd, 2,007 60/951, the U.S. Provisional Application 60/984 that on October 31st, 384 and 2007 submitted to, 286, U.S.'s non-provisional application 11/967 of submitting on November 31st, 2007,603, U.S.'s non-provisional application 12/023 of submitting on January 31st, 2008,679 right, all these are incorporated herein by reference in full.
Background
Invention field
Relate generally to field of semiconductor manufacture of the present invention.More particularly, the present invention relates to from the method for the undesirable material of at least one cleaning surfaces of semiconductor process chamber.
Background of invention
By chemical vapour deposition (" CVD ") or by ald (" ALD ") deposited material on silicon matrix, be the common step in unicircuit is made.Because the character of these deposition techniques, the material of wanting to be deposited on the matrix usually also by mistake is deposited on the indoor surface of semiconductor processes.Must periodically clean these depositions unintentionally at the undesirable material on the various surfaces of semiconductor process chamber; Otherwise after they may accumulate or influence at the deposition step of same indoor execution.Therefore, in order to keep high quality product, it is essential periodically cleaning whole chamber, and preferably has the cleaning method of abrasive speed so that the throughput capacity of the stop time of maintenance instrument minimum and instrument maximum.
The method of many several chambers in common knowledge cleaning.The wetting chemically cleaning of chamber is possible, but because it needs the dismounting of reaction chamber, it needs high labor force to consume and long stop time.The so-called cleaning of doing comprises to indoor introducing gaseous mixture, itself and undesirable substance reaction, and remove easily by purge step subsequently.Some dried cleaning method by microwave at indoor generation plasma body gaseous mixture is dissociated into reactive materials by chemical reaction clean deposition material.When the needs plasma body, part indoor and that plasma body does not directly contact can not clean fully.And along with the time goes over, plasma body can may have a negative impact to the chamber condition by its infringement and deterioration of any component to chamber and wherein storage.It is possible using the remote plasma system that the reactant of the upstream of chamber is dissociated, but needs to install other instrument and device and by instrument owner operation, this is very expensive and may increase total cleaning stop time.
When not having plasma body, can increase the temperature of chamber so that attempt promoting the thermal dissociation of clean air mixture.Because heating chamber increases the stop time of total cleaning, and the component that also may damage the chamber and wherein store, the commercial viability of this high temperature modification cleaning is poor.Such heating steps also may need other equipment.
Therefore, need a kind ofly at the indoor chamber cleaning method that does not need plasma body, it can implemented under the low temperature relatively, and its upstream need install minimum optional equipment or with semiconductor processes instrument binding operation.
Summary of the invention
This paper has described new prescription and the method that is used for the low temperature clean semiconductor process chamber.The method of the disclosure and prescription use pretreated clean air mixture, when it introduces semiconductor process chamber at low temperatures, remove undesirable material from chamber surface.The concrete prescription of clean air mixture may be different with combination.
In one embodiment, provide and comprised at least a semiconductor process chamber of not wishing to have material on indoor surface.First gaseous mixture that pre-treatment comprises fluorine source and oxygen source contains pretreated first gaseous mixture of reactive fluorine species with formation.This pretreated first gaseous mixture is introduced the atmosphere storage system.The temperature of chamber is reduced to first temperature then, and allows pretreated first gaseous mixture to enter the room from the atmosphere storage system flow.By pretreated first gaseous mixture with do not wish that the chemical reaction that takes place between the material is arranged, therefore form reaction product then, that removes or clean chamber internal surface from the surface does not wish to have material to small part.Do not produce plasma body indoor, and the temperature of the chamber that do not raise is higher than under the situation of first temperature, implemented the cleaning of chamber.
Other embodiment of the present invention may include, but not limited to following one or more features:
-the first gaseous mixture comprises by volume, be less than about 99%, and more preferably about 50% to about 80% fluorine source;
-the first gaseous mixture comprises by volume, be less than about 99%, and more preferably about 20% to about 50% oxygen source;
-fluorine source comprises at least a and its mixture in nitrogen trifluoride, nitrosyl fluoride, nitroxyl fluoride, nitryl hypofluorite, sulfur hexafluoride, the fluorine;
-oxygen source comprises at least a and its mixture in nitrogen protoxide, nitrous oxide, nitrogen peroxide, oxygen, ozone, water, silicon-dioxide, nitrosyl fluoride, the oxidation nitrogen trifluoride;
The pre-treatment of-the first gaseous mixture comprises introduces first gaseous mixture in reactor, first gaseous mixture reacts in reactor with from fluorine source disassociation fluorine and produce reactive fluorine species gaseous mixture, cool off first gaseous mixture to about room temperature, and introduce first gaseous mixture to the storage of atmosphere storage system;
-reactor and semiconductor process chamber not fluid are connected;
-by the temperature of heating first gaseous mixture between about 300 ℃ to about 1000 ℃, or by exposure first gaseous mixture in plasma body, first gaseous mixture reacts in reactor;
-by the temperature of heating first gaseous mixture between about 400 ℃ to about 700 ℃, first gaseous mixture reacts in reactor;
-the first gaseous mixture is substantially in the position pre-treatment away from the position, chamber;
-introduce chamber pre-treatment the day before yesterday first gaseous mixture at least at pretreated first gaseous mixture;
-before introducing was indoor, pretreated first gaseous mixture was stored in the atmosphere storage device about at least 12 hours;
-pretreated first gaseous mixture is introduced the chamber with per minute about 1 to the speed that about 10 standards rise;
-undesirable material comprises SiO
2, at least a and its mixture in SiN, SiON, polysilicon, amorphous silicon, the microcrystal silicon;
-the first temperature is about 50 ℃ to about 500 ℃, and more preferably is about 50 ℃ to 300 ℃;
-undesirable material be phosphosilicate glass (PSG) or boron phosphorus silicate glass (borophosphosilicate, BPSG)
-undesirable material comprises at least a and its mixture among Ta, TaN, TaO, the TaON;
-undesirable material comprises at least a and its mixture among Ti, TiN, TiO, the TiON;
-undesirable material comprises ZrO
2, at least a and its mixture among ZrN, ZrON, ZrSiN, ZrSiON, the ZrSiOx;
-undesirable material comprises HfO
2, at least a and its mixture among HfN, HfON, HfSiN, HfSiON, the HfSiOx; And
-undesirable material comprises a kind of and its mixture among W, WOx, WNx, WON, WSiO, WSiN, the WSiOx at least.
For following better understanding detailed description of the present invention, above-mentioned characteristics of the present invention and the technological merit summarized more all sidedly.Of the present invention other characteristics and the advantage that have formed claim theme of the present invention hereinafter will be described.It will be appreciated by those skilled in the art that notion disclosed herein and special embodiment can be used as modification or design other structure to implement the basis of the identical purpose of the present invention.Those skilled in the art should also be appreciated that this transformation that is equal to does not depart from disclosed the spirit and scope of the invention in the appended claims.
Accompanying drawing describes in detail
In order further to understand essence of the present invention and purpose, the detailed description that should get in touch relevant referenced drawings subordinate has wherein provided identical or similar numbering and wherein to similar component:
-Fig. 1 has illustrated the schematic diagram according to an embodiment of the method that is used for the clean semiconductor treatment chamber of the present invention.
The description of preferred embodiment
Usually, embodiment of the present invention relate to the method that the treatment chamber that is used for the routine operation temperature by being equal to or less than the chamber to temperature is introduced the pretreatment gas mixture low temperature clean semiconductor process chamber that contains reactive fluorine species.This pretreatment gas mixture lower temperature and must generating chamber in remove or clean at least a undesirable material from chamber internal surface under the situation of plasma body.
With reference now to Fig. 1,, the embodiment of the method according to this invention has been described hereinafter.Semiconductor process chamber 100 comprises at least a undesirable material 101, and it is at least one surface of 100 in the chamber.Undesirable material 101 may be semiconductor fabrication processes, for example chemical vapour deposition (" CVD ") step, comprise the by product of low pressure chemical vapor deposition (" LPCVD ") or ald (" ALD ") step and plasma enhanced CVD (" PECVD ") step.Except deposition material on silicon matrix, these manufacturing steps are deposition material on the surface of other in being exposed to the chamber also.According to the particular semiconductor manufacturing step of in chamber 100, implementing, do not wish to have material 101 possibilities different.
In some embodiment, do not wish to have material 101 may comprise silicon.For example, do not wish to have material 101 may be SiO
2, SiN, SiON, polysilicon, amorphous silicon, microcrystal silicon or its mixture, it may be remained in chamber 100 in semi-conductor manufacturing, for example LPCVD process.
In certain embodiments, undesirable material 101 may be the glass form, for example phosphosilicate glass (" PSG ") or boron phosphorus silicate glass (" BPSG "), and it may be remained in chamber 100 in the process of semi-conductor manufacturing, for example LPCVD.
In certain embodiments, undesirable material 101 may comprise metal.For example, do not wish to have material may be tantalum base (for example Ta, TaN, TaO, TaON), titanium base (for example Ti, TiN, TiO, TiON), zirconium base (ZrO for example
2, ZrN, ZrON, ZrSiN, ZrSiON, ZrSiO
x), hafnium base (HfO for example
2, HfN, HfON, HFSiO, HfSiN, HfSiON, HfSiO
x), tungsten base (for example W, WOx, WNx, WON, WSiO, WSiN, WSiON) or its mixture, it may be in semiconductor fabrication, for example ALD is remained in chamber 100.
Persons skilled in the art will recognize that above-mentioned formula and the value of variable x especially, can change according to the stoichiometric ratio of material and the state of oxidation of element.Those skilled in the art also can be appreciated that the special semiconductor fabrication of implementing according in chamber 100, and other undesirable material 101 is possible.
Pre-treatment comprises that first gaseous mixture 102 of fluorine source 103 and oxygen source 104 comprises the pretreatment gas mixture 106 of reactive fluorine species with formation.
The fluorine source 103 that comprises in first gaseous mixture 102 may be different with the relative populations of oxygen source 104.Usually, the quantity in the fluorine source 103 in first gaseous mixture 102 is greater than or equal to the quantity of oxygen source 104 in stoichiometric ratio.First gaseous mixture 102 also may comprise rare gas element (for example argon gas, nitrogen, helium) as surplus materials.In certain embodiments, fluorine source 103 may by volumes be lower than approximately 99%, and oxygen source 104 may be lower than about 99% by by volumes.In certain embodiments, first gaseous mixture 102 may comprise the fluorine source of by volume by volume about 50% to about 80% and the oxygen source 104 of by volume about 20% to about 50%.In one embodiment, fluorine source 103 may be about identical quantity with oxygen source 104.
The composition in fluorine source 103 also may be different.In certain embodiments, fluorine source 103 may be a kind of or its mixture in nitrogen trifluoride, nitrosyl fluoride, nitroxyl fluoride, nitryl hypofluorite, sulfur hexafluoride, the fluorine.In addition, the composition of oxygen source 104 may be different.In certain embodiments, oxygen source 104 may be a kind of or its mixture in nitrogen protoxide, nitrous oxide, nitrogen peroxide, oxygen, ozone, water, the silicon-dioxide, and for example oxygen source 104 may be nitrosyl fluoride or oxidation nitrogen trifluoride.
In one embodiment, first gaseous mixture 102 may be the mixture of fluorine and nitrosyl fluoride, and it can obtain by following reaction:
F
2 (excessive)+ NO → F
2+ FNO
In this embodiment, fluorine is as fluorine source 103, and nitrosyl fluoride is as oxygen source 104.First gaseous mixture 102 can or mix by the traditional way preparation, for example mixes F with the gas mix manifold containing
2And NO.
In one embodiment, first gaseous mixture 102 pre-treatment in reactor 105, it can be the reactor of traditional type, for example pressurized vessel or encloses container.First gaseous mixture 102 is introduced container 105, reacts this its with the 103 disassociation fluorine from the fluorine source, therefore produces reactive fluorine species in first gaseous mixture 102.In certain embodiments, reaction may be the thermolysis type reaction, and wherein reactor heating arrives about 300 ℃ and arrives about 1000 ℃ temperature, preferably is heated to about 500 ℃.In certain embodiments, can be for the fluorine that dissociates by exposing first gaseous mixture 102 initiation reaction in plasma body.
In certain embodiments, because the continuous fluid flowing-path between reactor 105 and treatment chamber 100, for example the flowing-path that produces by pipeline or pipe does not exist, and reactor 105 and semiconductor process chamber 100 not fluid are connected.This may since the pre-treatment of first gaseous mixture 102 in the fact that takes place away from 108 positions of 109 positions of chamber 100 substantially.For example, chamber 100 may be positioned at semi-conductor and make the position, and pre-treatment may outside this position, be not positioned at make on the position or gas produce, storage or fill (transfill) center mutually.In certain embodiments, distance, preferably about 5 miles distance or the more preferably about 1 mile distance that position 108 and position 109 may be about 10 miles.
After the reaction of disassociation type, pretreated first gaseous mixture 106 may be cooled to about room temperature by water cooler 112 (it may be traditional water cooler, for example heat exchanger).Pretreated then first gaseous mixture 106 is introduced atmosphere storage system 107 and is used for storage.In certain embodiments, atmosphere storage system 107 is traditional atmosphere storage system, for example, is suitable for storing the gas cylinder of the fluorine of fluorine-containing pressurized gas.Before introducing pretreated first gaseous mixture 106, may first passivation gas storage system 107.By storage pretreatment gas mixture 106 in atmosphere storage system 107, the pre-treatment and the time between the pretreatment gas mixture 106 of using may increase.For example, in pre-treatment with to use the time between pretreated first gaseous mixture 106 can be several days.Usually, after pretreated first gaseous mixture 106 was stored in the atmosphere storage system 107, the atmosphere storage system 108 shifted out from the position, and wherein pre-treatment occurs in the position 109 that pretreatment gas mixture 106 will be introduced semiconductor process chamber 100.In case atmosphere storage system 107 is sent to position 109, atmosphere storage system 107 links together with chamber 100 fluids in a conventional manner, and therefore the pretreatment gas mixture 106 that is included in the atmosphere storage system 107 can be introduced into chamber 100.
No matter implement special semiconductor processes step (for example CVD, ALD etc.) in chamber 100, the standard operation temperature of chamber 100 is usually very high, and for example, chamber 100 may operated above under 1000 ℃ the temperature.In certain embodiments, the temperature of chamber 100 is lower than pretreatment gas mixture 106 and is incorporated into first temperature before the chamber 100.In certain embodiments, first temperature is about 50 ℃ to about 500 ℃, and is preferably about 50 ℃ to about 300 ℃.
After temperature in chamber 100 was lower than about first temperature, pretreated first gaseous mixture 106 was incorporated into the chamber 100 from atmosphere storage device 107.The flow velocity of pretreated first gaseous mixture 102 may be about 1 to the 10 standard liter (slpm) of per minute.
In certain embodiments, about one day of first gaseous mixture, 102 pre-treatment before pretreated first gaseous mixture 106 is introduced chambers 100.In certain embodiments, pretreated first gaseous mixture 106 was stored in atmosphere storage device 107 about at least 12 hours before pretreated first gaseous mixture 106 is introduced chamber 100.
In case pretreated first gaseous mixture 106 appears in the chamber 100, the fluorine material in first gaseous mixture 102 and undesirable substance reaction and formation reaction product, it can be removed from chamber 100 by ventilation and gas relief line 110.Chamber 100 purges by rare gas element 111 (for example nitrogen, argon gas, helium etc.), and in order to remove by gas relief line 110, it is connected with chamber 100 fluids.
The specific reaction product that it will be appreciated by those of skill in the art that specific reaction and generation may have different according to Several Factors, it is included in the undesirable material that exists in the chamber and the special component of pretreatment gas mixture 102.Temperature in holding chamber 100 is lower than the first specific temperature, and when not producing plasma body in chamber 100, in this way, undesirable material 101 can be from the chamber 100 surface remove.
Embodiment
Following infinite embodiment is used to further specify embodiment of the present invention.Yet embodiment is not intended to all are included in interior and are not intended to limit the scope of the invention.
Embodiment 1:
The thermal cleaning of removing the TiN resistates from chamber surface was handled, 10% NO joined and is diluted in N
2In NF
3In.At 200 ℃, the cleaning speed of mixture is 852 dusts/minute (an A/ branch).When room temperature is increased to about 400 ℃, cleaning speed is increased to the 4000A/ branch.
Embodiment 2:
Removing Si
3N
4Thermal cleaning handle, use N
2The unique N F of dilution
3Even under about 500 ℃ temperature, can not clean yet.Yet 10%NO joins and is diluted in N
2In NF
3In mixture under 500 ℃ same chambers temp, produce and be higher than the cleaning speed that 1000A/ divides.Under 300 ℃, can observe the cleaning speed that about 388A/ divides.
Embodiment 3:
In the thermal cleaning of removing SiN is handled, 10% F
2With the mixture of 2% NO, use N
2Dilution is incorporated into indoor at 300 ℃ with 50torr.Under this condition, can observe the cleaning speed that about 1500A/ divides.
Although the present invention has provided and described embodiment, art technology person can make its correction on the basis that does not deviate from spirit of the present invention or instruction.Embodiment described herein only is exemplary but is not limited thereto.Within the scope of the invention, the many changes and the correction of composition and method are possible.Therefore the scope of protection is not limited to embodiment described herein, and only is defined by the claims, its scope should comprise claim all be equal to subject content.
Claims (23)
1. be used for the method for the low temperature clean of semiconductor process chamber, it comprises:
A) provide semiconductor process chamber, wherein the chamber comprises at least a undesirable material at least one indoor surface;
B) first gaseous mixture that comprises fluorine source and oxygen source is carried out pre-treatment to form pretreated first gaseous mixture, wherein pretreated first gaseous mixture comprises reactive fluorine species;
C) pretreated first gaseous mixture is introduced the atmosphere storage system;
D) temperature to the first temperature of reduction chamber;
E) to semiconductor process chamber, introduce pretreated first gaseous mixture from the atmosphere storage system; With
F) by pretreated first gaseous mixture with do not wish to have between the material chemical reaction that forms reaction product, remove at least a undesirable material from the surface of chamber, and not in indoor generation plasma body or the temperature that increases the chamber to being higher than first temperature.
2. the method for claim 1, wherein said first gaseous mixture comprises:
A) by volume is lower than about 99% fluorine source;
B) by volume is lower than about 99% oxygen source; With
C) remaining rare gas element.
3. method as claimed in claim 2, wherein said first gaseous mixture comprises:
A) the fluorine source of by volume about 50% to about 80%; With
B) oxygen source of by volume about 20% to about 50%.
4. the method for claim 1, wherein said fluorine source comprise and are selected from the group that following material forms at least one:
A) nitrogen trifluoride;
B) nitrosyl fluoride;
C) nitroxyl fluoride;
D) nitryl hypofluorite;
E) sulfur hexafluoride;
F) fluorine; With.
G) its mixture.
5. the method for claim 1, wherein said oxygen source comprise and are selected from the group that following material forms at least one:
A) nitrogen protoxide;
B) nitrous oxide;
C) nitrogen peroxide;
D) oxygen;
E) ozone;
F) water;
G) nitrosyl fluoride;
H) oxidation nitrogen trifluoride;
I) silicon-dioxide; With
J) its mixture.
6. the method for claim 1, wherein saidly first gaseous mixture is carried out pre-treatment comprise:
A) in reactor, introduce first gaseous mixture;
B) in reactor, make first gaseous mixture reaction with from fluorine source disassociation fluorine and gaseous mixture, produce reactive fluorine species;
C) cooling first gaseous mixture is to about room temperature; With
D) in the atmosphere storage system, introduce first gaseous mixture and be used for storage.
7. method as claimed in claim 6, wherein said reactor are not connected with the semiconductor process chamber fluid.
8. method as claimed in claim 6, it further comprises by heating first gaseous mixture makes first gaseous mixture reaction to about 300 ℃ to about 1000 ℃ temperature or by making first gaseous mixture be exposed to plasma body.
9. method as claimed in claim 8, it comprises that further heating first gaseous mixture arrives about 700 ℃ temperature to about 400 ℃.
10. the method for claim 1, it comprises that further first gaseous mixture is not substantially in the pre-treatment of the position of indoor location.
11. the method for claim 1, it carried out pre-treatment about at least one day to first gaseous mixture before further being included in the pretreated first gaseous mixture chamber of flowing through.
12. the method for claim 1, it further is included in stored pretreated first gaseous mixture about at least 12 hours before pretreated first gaseous mixture flows through the chamber in the atmosphere storage device.
13. the method for claim 1, the mobile per minute about 1 that is included in of wherein said pretreated first gaseous mixture flows pretreated first gaseous mixture under the flow velocity of about 10 standards liter.
14. the method for claim 1, wherein said undesirable material comprise in the group that is selected from following material composition at least one:
a)SiO
2；
b)SiN；
c)SiON；
D) polysilicon;
E) amorphous silicon;
F) microcrystal silicon; With
G) its mixture.
15. method as claimed in claim 14, wherein said first temperature are 50 ℃ to 500 ℃.
16. method as claimed in claim 15, wherein said first temperature are 50 ℃ to 30 ℃.
17. the method for claim 1, wherein said first temperature are 50 ℃ to 500 ℃.
18. the method for claim 1, wherein said undesirable material are phosphosilicate glass (PSG) or boron phosphorus silicate glass (BPSG).
19. comprising, the method for claim 1, wherein said undesirable material be selected from
In the group that following material is formed at least one:
a)Ta；
b)TaN；
c)TaO；
D) TaON; With
E) its mixture.
20. the method for claim 1, wherein said undesirable material comprise in the group that is selected from following material composition at least one:
a)Ti；
b)TiN；
c)TiO；
D) TiON; With
E) its mixture.
21. the method for claim 1, wherein said undesirable material comprise in the group that is selected from following material composition at least one:
a)HfO
2；
b)HfN；
c)HfON；
d)HfSiOx；
e)HfSiN；
F) HfSiON; With
G) its mixture.
22. the method for claim 1, wherein said undesirable material comprise in the group that is selected from following material composition at least one:
a)W；
b)WOx；
c)WNx；
d)WON；
e)WSiO；
f)WSiN；
G) WSiON; With
H) its mixture.
23. the method for claim 1, wherein said undesirable material comprise in the group that is selected from following material composition at least one:
a)ZrO
2；
b)ZrN；
c)ZrON；
d)ZrSiON；
e)ZrSiN；
F) ZrSiON; With
G) its mixture.
Applications Claiming Priority (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US90838107P | 2007-03-27 | 2007-03-27 | |
| US60/908,381 | 2007-03-27 | ||
| US95138407P | 2007-07-23 | 2007-07-23 | |
| US60/951,384 | 2007-07-23 | ||
| US98428607P | 2007-10-31 | 2007-10-31 | |
| US60/984,286 | 2007-10-31 | ||
| US11/967,603 US20080236482A1 (en) | 2007-03-27 | 2007-12-31 | Method for low temperature thermal cleaning |
| US11/967,603 | 2007-12-31 | ||
| US12/023,679 | 2008-01-31 | ||
| US12/023,679 US20080236483A1 (en) | 2007-03-27 | 2008-01-31 | Method for low temperature thermal cleaning |
| PCT/IB2008/051161 WO2008117258A2 (en) | 2007-03-27 | 2008-03-27 | Method for low temperature thermal cleaning |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101646801A true CN101646801A (en) | 2010-02-10 |
| CN101646801B CN101646801B (en) | 2011-11-16 |
Family
ID=39792111
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008800099151A Expired - Fee Related CN101646801B (en) | 2007-03-27 | 2008-03-27 | Method for low temperature thermal cleaning |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2145030A2 (en) |
| JP (2) | JP5174144B2 (en) |
| KR (1) | KR20100014584A (en) |
| CN (1) | CN101646801B (en) |
| WO (1) | WO2008117258A2 (en) |
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|---|---|---|---|---|
| KR101792165B1 (en) * | 2012-12-18 | 2017-10-31 | 시스타 케미칼즈 인코포레이티드 | Process and method for in-situ dry cleaning of thin film deposition reactors and thin film layers |
| JP2014170786A (en) * | 2013-03-01 | 2014-09-18 | Hitachi Kokusai Electric Inc | Cleaning method, method of manufacturing semiconductor device, substrate processing device, and program |
| JP5715717B2 (en) * | 2014-02-03 | 2015-05-13 | 株式会社日立国際電気 | Semiconductor device manufacturing method, cleaning method, and substrate processing apparatus |
| WO2022259953A1 (en) * | 2021-06-09 | 2022-12-15 | 昭和電工株式会社 | Dry etching method, method for producing semiconductor element, and cleaning method |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06145990A (en) * | 1992-11-10 | 1994-05-27 | Hitachi Electron Eng Co Ltd | Cleaning method for cvd apparatus |
| US20030143846A1 (en) * | 2000-09-25 | 2003-07-31 | Akira Sekiya | Gas compositions for cleaning the interiors of reactors as well as for etching films of silicon- containing compounds |
| US6843258B2 (en) * | 2000-12-19 | 2005-01-18 | Applied Materials, Inc. | On-site cleaning gas generation for process chamber cleaning |
| US20040074516A1 (en) * | 2002-10-18 | 2004-04-22 | Hogle Richard A. | Sub-atmospheric supply of fluorine to semiconductor process chamber |
| US20050082002A1 (en) * | 2003-08-29 | 2005-04-21 | Yuusuke Sato | Method of cleaning a film-forming apparatus and film-forming apparatus |
| JP4739709B2 (en) * | 2003-08-29 | 2011-08-03 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Cleaning method for film forming apparatus |
-
2008
- 2008-03-27 WO PCT/IB2008/051161 patent/WO2008117258A2/en active Application Filing
- 2008-03-27 CN CN2008800099151A patent/CN101646801B/en not_active Expired - Fee Related
- 2008-03-27 KR KR1020097020058A patent/KR20100014584A/en not_active Application Discontinuation
- 2008-03-27 EP EP08737642A patent/EP2145030A2/en not_active Withdrawn
- 2008-03-27 JP JP2010500419A patent/JP5174144B2/en not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2008117258A2 (en) | 2008-10-02 |
| JP2010522985A (en) | 2010-07-08 |
| JP5174144B2 (en) | 2013-04-03 |
| WO2008117258A3 (en) | 2009-05-22 |
| CN101646801B (en) | 2011-11-16 |
| JP2013138210A (en) | 2013-07-11 |
| EP2145030A2 (en) | 2010-01-20 |
| JP5518990B2 (en) | 2014-06-11 |
| KR20100014584A (en) | 2010-02-10 |
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