CN101378850A - Enhancement of remote plasma source clean for dielectric films - Google Patents

Enhancement of remote plasma source clean for dielectric films Download PDF

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Publication number
CN101378850A
CN101378850A CN 200680053046 CN200680053046A CN101378850A CN 101378850 A CN101378850 A CN 101378850A CN 200680053046 CN200680053046 CN 200680053046 CN 200680053046 A CN200680053046 A CN 200680053046A CN 101378850 A CN101378850 A CN 101378850A
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chamber
processing chamber
active
oxygen
species
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CN 200680053046
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Chinese (zh)
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A·T·迪莫斯
D·辛格尔顿
G·巴拉苏布拉马尼恩
H·M'沙迪
K·D·李
K·S·伊姆
K·杰纳基拉曼
M·J·西蒙斯
M·阿优伯
S-Y·B·唐
T·诺瓦克
V·N·T·恩古耶
W·H·叶
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应用材料股份有限公司
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Publication of CN101378850A publication Critical patent/CN101378850A/en

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Abstract

Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and/or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.

Description

加强用于介电膜层的远程等离子体源清洁 Strengthen remote plasma source for cleaning the dielectric film

技术领域 FIELD

本发明的实施例大体上系有关于使用一远程等离子体源来清洁处理腔室的方法。 Embodiments of the invention generally to a method for using a system remote plasma source chamber cleaning process.

背景技术 Background technique

集成电路几何规模的尺寸已经戏剧般地减少,这是因为这样的器件在数十年前被首先引入。 Geometric scale integrated circuits have decreased the size of the dramatic, since such devices were first introduced decades ago. 从那时以来,集成电路大致上依循着两年/一半尺寸的规则(通常被称为摩尔定律(Moore's Law)),其意谓着芯片上的器件数目每两年会加倍。 Since then, integrated circuits generally follow the rules of the two year / half-size (commonly referred to as Moore's Law (Moore's Law)), which means that the number of devices on a chip will double every two years. 今日的制造设施系惯例地在制造具有0.13微米且甚至0.1微米特征尺寸的器件,且明日的设施将会制造具有甚至更小特征尺寸的器件。 Today's manufacturing facility based practice in manufacturing a 0.13 micron and even 0.1 micron feature sizes, and tomorrow's manufacturing facility will have even smaller feature sizes.

有助于这样的小器件尺寸的发展的一即是图案化膜层的发展,其中这些图案化膜层可以被精细地图案化,且具有经由基材下方层次来转移精细图案的能力。 Contribute to the development of such small-sized device that is the development of a patterned film layer, wherein the patterned film can be finely patterned, and has the ability to transfer the underlying substrate level via a fine pattern. 这样的图案化膜层的一实例为非晶形碳膜层,例如APF TM膜层,其可以由美国加州圣大克劳拉市的Applied Materials,lnc.公司所获得。 Examples of such a patterned film of the amorphous carbon layer, e.g. APF TM layer, which can be obtained by a Kelao La, California Santa Applied Materials, lnc. Company.

在半导体器件制造中使用非晶形碳图案化膜层已经产生了除去含碳材料的方法的需求,其中该含碳材料系不乐见地被产生在用以处理(例如沉积或蚀刻)非晶形碳图案化膜层的腔室的内表面上(例如侧壁与腔室部件)。 Using the amorphous carbon layer is patterned in a semiconductor device fabrication method has generated a demand for removal of carbonaceous material, wherein the carbonaceous material is not like to see lines being generated for processing (e.g., etch or deposition) amorphous carbon pattern film layer on the inner surface of the chamber (e.g., the chamber member sidewalls). 使用被腔室中原位射频(RF)功率所活化的氧(O 2 )做为清洁气体的清洁过程已经被发展出用来清洁适用以沉积非晶形碳膜层的腔室。 Use was activated in situ in the chamber radio frequency (RF) power of oxygen (O 2) as a cleaning gas cleaning processes have been developed for cleaning the deposition chamber is adapted to the amorphous carbon layer. 然而,需要以除去含碳沉积物的原位RF功率会损坏腔室部件。 However, it is necessary to remove situ RF power may damage the chamber member carbonaceous deposits. 使用被远程等离子体源所活化的氧O 2做为清洁气体的清洁过程可以降低或消除清洁过程期间的腔室损坏。 Using a remote plasma source chamber is activated by the oxygen O 2 as the cleaning gas cleaning process may reduce or eliminate damage during the cleaning process. 但是,许多被远程等离子体源产生的氧自由基会在达到足够的腔室清洁之前再结合。 However, many of the remote plasma source generated oxygen radicals may recombine before reaching a sufficiently clean chamber. 例如,氧自由基可能会在其抵达需要清洁的腔室的所有区域之前再结合以形成O 2 For example, oxygen radicals may all be cleaned before the region of the chamber need to be combined to form O 2 at its arrival.

器件几何规模的持续减少也已经对于具有低介电常数(k)值的膜层产生需求。 Sustained reduction scale geometry devices also have need for values ​​generated film having a low dielectric constant (k). 具有k值低于约3.0且甚至低于约2.5的低介电常数膜层(例如有机硅膜层(SiCOH膜层))已经被发展出。 Having a k value of less than about 3.0, and even the low dielectric constant film is less than about 2.5 (e.g., a silicone layer (the SiCOH film layer)) have been developed. 这些膜层拥有高碳含量。 These films have a high carbon content. 低介电常数SiCOH膜层常常与含硅与碳的阻障膜层一起被使用。 SiCOH low dielectric constant film is often used with a barrier film comprising silicon and carbon.

具有高碳含量的低介电常数膜层的发展已经产生了除去含碳材料的方法的需求,其中该含碳材料系被沉积在用来处理低介电常数膜层的腔室的内表面上。 Development of low dielectric constant film having a high carbon content has created a need method for removing carbonaceous material, wherein the carbonaceous material-based layer is deposited on the inner surface of the chamber for processing in the low dielectric constant . 已经发现到的是,用来除去源自其它介电膜层(例如不含碳的氧化硅膜层)的材料的方法已经具有不乐见的负效果,且不总是足以从源自低介电常数膜层(其具有高碳含量)的沉积物除去碳。 It has been found that the, from the method used to remove other dielectric film layers (e.g., silicon oxide film containing no carbon) material having a negative effect has not like to see, not always sufficient low dielectric derived from deposit dielectric constant film layer (having a high carbon content) removing carbon. 例如,已经观察到的是,通过提供原位射频(RF)功率至一低介电常数有机硅膜层沉积腔室以清洁此腔室会造成污染氟化铝微粒的形成(其中该RF功率系会活化足够的NF 3来清洁碳沉积物),这是因为RF功率所产生的氟离子会与铝结合,其中铝常常被用做为处理腔室中的衬里材料。 For example, it has been observed that, in situ by providing a radio frequency (RF) power to a low dielectric constant organosilicon film deposition chamber to clean the chamber will cause this (where the RF power line is formed of aluminum fluoride contamination particles 3 will be sufficient to clean the activated carbon deposits of NF), since the fluoride ions generated by RF power will combine with aluminum, wherein the aluminum are often used as liner material in the processing chamber.

从处理腔室中除去污染微粒渐渐地变为重要,因为器件尺寸变得更小,且深宽比(aspect ratio)变得更关键。 Removing contaminant particles from the processing chamber gradually becomes important, as the device size becomes smaller, and aspect ratio (aspect ratio) becomes more critical. 随着更小的特征尺寸与更大的深宽比,污染微粒的尺寸与数目必须被减少以维持器件效能。 With smaller feature size and aspect ratio, size and number of larger contaminant particles must be reduced in order to maintain the effectiveness of the device.

因此,存在有一种能够有效率地清洁处理腔室且减少污染物形成的方法的需求。 Thus, there is capable of efficiently cleaning requirements processing chamber and method of reducing the formation of pollutants. 特别地,存在有一种清洁用来处理膜层(其具有高碳含量,例如非晶形碳膜层)的腔室的方法的需求,其中这些膜层能够被用做为图案化膜层、低介电常数有机硅膜层、以及含硅与碳阻障膜层。 In particular, there is a clean process for coating layer (having a high carbon content, for example, amorphous carbon layer) of the need for a process chamber, wherein the film layer can be used as a patterned film layer, a low dielectric electric constant silicone film layer, and a barrier film comprising silicon and carbon.

发明内容 SUMMARY

本发明大体上系有关于清洁半导体处理腔室的方法。 The present invention is based in general to a method for cleaning a semiconductor process chamber. 通过使用本文描述的方法,可以清洁用来处理含碳膜层与其内表面上具有含碳沉积物的半导体处理腔室。 By using the methods described herein, it can be used for cleaning a semiconductor processing chamber having a processing carbonaceous deposits on the inner surface of the carbonaceous film layer thereto. 例如,通过使用本文描述的方法,可以清洁用来处理非晶形碳膜层、含硅与碳阻障膜层以及含硅、氧与碳的低介电常数膜层的半导体处理腔室。 For example, by using the methods described herein, it can be used for the cleaning process the amorphous carbon layer, the barrier layer and the silicon and carbon of the low dielectric constant film containing silicon, oxygen and carbon in a semiconductor processing chamber.

在一实施例中,一种清洁一具有含碳沉积物的处理腔室的方法系包含:在一远程等离子体源中从一含氧气体产生活性氧物质,其中该远程等离子体源连接至该处理腔室;在该远程等离子体源中从一含氮气体产生活性氮物质;导引该活性氧物质与该活性氮物质进入该处理腔室;以及在腔室中不存在有RF功率下将该处理腔室的多个内表面暴露于该活性氧物质与该活性氮物质。 The method of processing chamber In one embodiment, a cleaning system having carbonaceous deposits comprising: generating a reactive oxygen species from the oxygen-containing gas in a remote plasma source, wherein the remote plasma source connected to the processing chamber; produced in the remote plasma source, a nitrogen-containing gas from the reactive nitrogen species; directing the reactive oxygen species and reactive nitrogen species that enter the process chamber; and absent in the chamber with an RF power in the a plurality of inner surfaces of the processing chamber is exposed to the reactive oxygen species to the reactive nitrogen species. 腔室具有一气体散布组件与多个腔室壁,气体散布组件包含一面板,气体散布组件与腔室壁在清洁过程期间皆被加热至一温度,较佳为至少150℃。 A chamber having a gas distribution assembly with a plurality of chamber walls, the gas distribution assembly comprises a panel, the chamber wall and the gas distribution assembly is heated to a temperature of both during the cleaning process, preferably at least 150 ℃. 活性氟物质也可以从远程等离子体源被导入用来沉积含硅与碳膜层的处理腔室,而用来沉积不含硅膜层的处理腔室系被清洁而不使用活性氟物质。 Active fluorine may be introduced into the material used to deposit silicon-containing carbon layer and the process chamber from the remote plasma source, and used to deposit a silicon based film processing chamber is cleaned without the use of active fluorine species.

在另一实施例中,一种清洁一处理腔室的方法系包含:在该处理腔室中执行一基于氧气的灰化过程;在一远程等离子体源中从一含卤素气体产生活性物质,其中该远程等离子体源连接至该处理腔室;导引来自该含卤素气体的活性氧物质进入该处理腔室;以及将该处理腔室的多个内表面暴露于该活性物质。 In another embodiment, a method of cleaning a process chamber based method comprises: performing an oxygen-based ashing process in the processing chamber; active substance produced in a remote plasma source from a halogen containing gas, wherein the remote plasma source coupled to the processing chamber; reactive oxygen species from the guide halogen-containing gas enters the process chamber; and a plurality of the inner surface of the processing chamber is exposed to the active substance.

基于氧气的灰化过程系包含导入一含氧气体至该处理腔室,以及在该处理腔室中施加RF功率以从含氧气体产生活性氧物质。 Based ashing system comprising introducing an oxygen containing gas to the processing chamber and applying RF power in the processing chamber to generate active oxygen species from the oxygen-containing gas. 基于氧气的灰化过程可以被执行为一步骤。 Oxygen-based ashing process may be performed as a step. 替代性地,基于氧气的灰化过程可以被执行于两个步骤中,其一步骤系用以清洁处理腔室的面板,且另一步骤系用以清洁处理腔室的其它内表面。 Alternatively, the oxygen-based ashing process may be performed in two steps, one step for the panel based chamber cleaning process, and a further step to clean other lines the inner surface of the processing chamber. RF功率系在基于氧气的灰化过程之后被终止,且处理腔室的内表面系在不存在有RF功率下被暴露于来自远程等离子体源的活性物质。 RF power train is terminated after oxygen-based ashing process, and the inner surface of the processing chamber based on the absence of an active material from a remote plasma source was exposed to the RF power. 基于氧气的灰化过程用以从腔室内表面除去含碳沉积物,且来自远程等离子体源的活性物质用以接续地从腔室内表面除去含硅与氧沉积物。 Process for the oxygen-based ashing chamber is removed from the inner surface of the carbonaceous deposits, and the active substance from a remote plasma source for successively removed from the interior surface of the chamber with the silicon-oxygen deposit. 在一较佳实施例中,使用在基于氧气的灰化过程中的含氧气体为氧(O 2 ),提供原端等离子体源中活性物质的含卤素气体为三氟化氮(NF 3 )。 In a preferred embodiment, using an oxygen containing gas on ashing in oxygen (O 2), provide the original end of the plasma source gas containing a halogen active substance is nitrogen trifluoride (NF 3) .

附图说明 BRIEF DESCRIPTION

本发明之前述特征可以通过参照实施例详细地被了解,其中一些实施例系绘示于附图中。 The foregoing features of the present invention may be understood by reference to the embodiments in detail, some system embodiments depicted in the drawings. 然而,必须注意的是,附图仅绘示出本发明的典型实施例,且因此不被认定会限制本发明范围,本发明可以具有其它等效的实施例。 However, it must be noted that the embodiments illustrate only typical embodiments of the present invention are shown and thus will not be found to limit the scope of the present invention, the present invention may have other equally effective embodiments.

第1图为一流程图,其系绘制清洁一处理腔室的方法的一实施例。 Example 1 a picture shows a flowchart based rendering a process chamber cleaning method.

第2图为一处理腔室的截面图,其中该处理腔室可以根据本发明实施例被清洁。 The picture shows a sectional view of the second processing chamber, wherein the process chamber is cleaned embodiment of the present invention may be practiced.

第3图为一流程图,其系绘制清洁一处理腔室的方法的另一实施例。 3 photo shows a flow chart of another method based rendering cleaning a processing chamber embodiment.

第4图显示显示内部腔室表面的FTIR光谱的Si-CH 3曲线,其中该内部腔室表面系历经根据本发明一实施例所执行的基于氧气的灰化过程。 FIG 4 displays the FTIR spectrum interior chamber surface Si-CH 3 curves, wherein the internal chamber surfaces over a system in accordance with the oxygen based process of ashing according to an embodiment of the present invention is performed.

具体实施方式 Detailed ways

本发明大体上系提供用以清洁处理腔室(例如沉积腔室)的方法,其中该处理腔室系用来制造集成电路与半导体器件。 The present invention generally provides a method for cleaning a process chamber (e.g., deposition chamber), wherein the process chamber for manufacturing integrated circuits and semiconductor-based device. 这些清洁方法包括有使用产生于远程等离子体源中的活性物质,以从处理腔室清洁含碳沉积物。 These cleaning methods include the use of a remote plasma source generated in the active material from the processing chamber to clean carbonaceous deposits.

本文描述的腔室清洁方法的一实施例系绘制于第1图,且以下将详细地讨论。 A cleaning method embodiment described herein, the chamber based plotted in Figure 1, and will be discussed in detail below. 如步骤100所示,一基于氧气的灰化(ashing)过程被执行于一处理腔室中。 As shown in step 100, an oxygen-based ashing (ashing) process is performed in a processing chamber. 如步骤102所示,活性物质系从一含卤素气体被产生在一远程等离子体源中,其中该远程等离子体源连接至处理腔室。 As shown in step 102, the active substance is based on a remote plasma generated from a source gas containing a halogen, wherein the remote plasma source connected to the processing chamber. 如步骤104所示,活性物质被导入处理腔室。 As shown in step 104, the active material is introduced into the processing chamber. 如步骤106所示,接着,在腔室内不存在有RF功率时,处理腔室的内表面暴露于活性物质。 As shown in step 106, then, in the absence of the chamber with an RF power, the inner surface of the processing chamber is exposed to the active substance.

可以使用本文方法来清洁的腔室的一实例系为 Examples of a method described herein may be used to clean the chamber is based 化学气相沉积(CVD)腔室,其可以由美国加州圣大克劳拉市的Applied Materials,lnc.公司所获得。 Chemical vapor deposition (CVD) chamber, which can be obtained from the Kelao La, California Santa Applied Materials, lnc. Company. 化学气相沉积腔室具有两个用以沉积碳掺杂氧化硅(例如包含硅、氧、与碳、及其它材料的低介电常数膜层)的隔离区域。 A chemical vapor deposition chamber having two to deposit carbon-doped silicon oxide (e.g. comprising silicon, oxygen, carbon, and other materials of low dielectric constant film) of the isolation region. 一种具有两隔离处理区域的腔室系描述于美国专利US5,855,681中,其在此被并入本文以做为参考。 Chamber system having two isolated processing regions is described in U.S. Patent No. US5,855,681, which is incorporated herein by herein by reference.

化学气相沉积腔室具有远程等离子体源可以接附的一端口。 A chemical vapor deposition chamber having a remote plasma source port may be attached to. 拥有从MKS Instruments公司获得的 It has obtained from MKS Instruments Company 远程等离子体源的 Remote plasma source 化学气相沉积腔室可以被使用于本文所描述的方法的实施例中。 A chemical vapor deposition chamber may be used in the methods described herein in the Examples. 然而,也可以使用其它处理腔室与远程等离子体源。 However, also other processing chamber and the remote plasma source.

下文描述的气体流速系指CVD腔室整体(即两个隔离处理区域)所经历的流速。 It means hereinafter described gas flow rate of the overall CVD chamber (i.e. two isolated processing regions) experienced by the flow rate. 是以,CVD腔室的每一处理区域所经历的气体流速约为CVD腔室整体所经历的气体流速的一半。 Therefore, each of the processing region of the CVD chamber gas flow rates experienced by the CVD chamber is about half the overall gas flow rate experienced. 虽然实施例的一些实例系以清洁具有两个处理区域的CVD腔室的一处理区域来叙述,在此描述的方法可以被用于清洁具有一个或超过两个处理区域的腔室的一处理区域。 While some examples of embodiments of the system having a processing region to clean the CVD chamber to the two processing regions is described, the method described herein may be used to clean one or more than two processing regions in a processing region of the chamber .

具有两个处理区域与两个远程等离子体源的腔室的一实例系显示于第2图。 Examples of a system having two chambers and two processing regions remote plasma source 2 shown in FIG. 腔室200在一腔室本体212内具有处理区域218与220,腔室本体212具有壁,壁内具有一加热构件(未示出)。 Chamber 200 has a chamber body 212 inside the processing region 218 and 220, chamber body 212 having a wall, having a heating member (not shown) within the wall. 一远程等离子体源250连接至处理区域218,且另一远程等离子体源250连接至处理区域220。 A remote plasma source 250 connected to the processing region 218, and the other remote plasma source 250 connected to the processing region 220. 一基材支撑件228(其为一加热载座)系通过一杆体226可移动地设置在每一处理区域218、220中,杆体226延伸穿过腔室本体212的底部而连接至一驱动系统203。 A substrate support member 228 (which is a heated pedestal) through a line 226 is movably disposed in each processing region 218, 220, connecting rod 226 extends through the bottom of the chamber body 212 to a driving system 203. 每一处理区域218、220也较佳地包括一气体散布组件208,气体散布组件208系被设置成穿过腔室盖204。 Each processing region 218, 220 also preferably includes a gas distribution assembly 208, the gas distribution system component 208 is disposed through the chamber lid 204. 每一处理腔室的气体散布组件208包括一气体入口信道240,气体入口信道240会输送气体进入一淋洒头器件242。 Each processing chamber gas distribution assembly 208 includes a gas inlet channel 240, a gas inlet channel 240 will enter a conveying gas shower head device 242. 淋洒头器件242包括一面板246以输送气体进入处理区域218、220。 Shower head device 242 includes a panel 246 for delivering gases into the processing regions 218,220. 气体散布组件208包括一加热构件(未示出),加热构件会加热气体散布组件208的部件(包括面板246)。 A gas distribution assembly 208 includes a heating member (not shown), a heating member heats the gas distribution member assembly 208 (including the panel 246).

再参阅第1图,基于氧气的灰化过程包括导引一含氧气体进入处理腔室,且施加RF功率于处理腔室中以提供用以产生活性氧物质的等离子体。 Referring again to FIG. 1, based ashing oxygen containing gas comprises a guide into the processing chamber and applying RF power to the processing chamber to provide a plasma to generate reactive oxygen species. 活性氧物质可以为氧自由基、离子化氧物质、或激化状态的氧物质。 Reactive oxygen species may be oxygen free radicals, ionized oxygen species, or intensification state oxygen species. 含氧气体可以选自例如由O 2 、O 3 、CO 2 、与其组合物所构成的群组中。 Oxygen-containing gas may be selected from the group consisting of O 2, O 3, CO 2 , and its composition is constituted. 含氧气体能够以一流速被导入处理腔室。 An oxygen-containing gas can be introduced into the processing chamber at a flow rate. 本文所提供的流速与其它处理条件系针对用以处理300毫米基材的腔室,且对于其它基材或腔室尺寸可以被调整。 Other process conditions and flow lines provided herein for the chamber for processing 300 mm substrates, and can be adjusted to the size of the other substrate or chamber. 选择性地,含氧气体能够与一稀释载气(例如氩、氮、或氦)一起被导入处理腔室,以增加腔室中等离子体稳定性。 Alternatively, the oxygen-containing gas can be introduced into the processing chamber with a carrier gas diluted (e.g. argon, nitrogen, or helium) together to increase the stability of the plasma chamber. 基于氧气的灰化过程系被执行在足以除去先前形成于腔室内表面上的碳沉积物的条件下。 It is performed under conditions sufficient to remove carbon deposits previously formed on the interior surface of the cavity of the system based on oxygen ashing. 基于氧气的灰化过程的速率可以通过改变RF功率、间隔、温度、含氧气体的流速、与/或压力来调整。 Can, spacing, temperature, flow rate of oxygen-containing gas, and / or pressure is adjusted based on the rate of oxygen ashing process by changing the RF power.

在基于氧气的灰化过程被执行于处理腔室中之后,处理腔室中RF功率系在远程等离子体源中产生的活性物质被导入腔室之前被停止,如第1图的步骤102与104所示。 After the oxygen-based ashing process is performed in the processing chamber, the active substance in the processing chamber based RF power generated in the remote plasma source is stopped before it is introduced into the chamber as a first step 102 and 104 of FIG. Fig. 较佳地,在基于氧气的灰化过程完成之后,在远程等离子体源中产生的活性物质系立即地被导入腔室,使得基于氧气的灰化与使用远程等离子体源中产生的活性物质的清洁系被“接续地(back-to-back)”执行。 Preferably, after the oxygen-based ashing process is completed, the active species generated in the remote plasma-based sources are immediately introduced into the chamber, so that the active substance produced using a remote plasma ashing with oxygen-based source clean lines were "successively (back-to-back)" execute.

通过在远程等离子体源中将一含卤素气体(例如含氟气体或含氯气体)暴露于等离子体条件,活性物质会被产生于远程等离子体源中。 By a halogen containing gas (e.g., fluorine-containing gas or a chlorine-containing gas) is exposed to the plasma conditions in the remote plasma source, the active material will be generated in a remote plasma source. 可以被使用的含氟气体的实例系包括NF 3 、CF 4 、C 2 F 4 、C 2 F 6 、F 2 、与其组合。 Examples of fluorine-containing gas used may be based include NF 3, CF 4, C 2 F 4, C 2 F 6, F 2, and combinations thereof. 可以被使用的含氯气体的实例系包括CCl 4 、C 2 Cl 6 、Cl 2 、与其组合。 Examples of chlorine-containing gas used may be based include CCl 4, C 2 Cl 6, Cl 2, and combinations thereof.

远程等离子体源所提供用以产生活性物质的功率可以约为例如10千瓦。 Power for generating the active species can be provided by a remote plasma source, for example, about 10 kilowatts. 活性物质可以是自由基、离子化物质、或激化状态的物质。 Active substance may be radical, ionic substances, or substances intensification state. 例如,活性物质可以是氟自由基、离子化氟物质、或激化状态的氟物质。 For example, the active substance may be fluorine radicals, fluorine-ionized species, or intensification state fluorine species. 活性物质能够以一流速从远程等离子体源被导入处理腔室。 Active substance can be introduced into the processing chamber from the remote plasma source to a flow rate. 处理腔室的内表面暴露于活性物质而持续一段足以除去含硅与氧沉积物的时间,其中在含碳沉积物通过基于氧气的灰化过程从腔室内表面被除去之后这些沉积物系残留在腔室内表面上。 The inner surface of the processing chamber is exposed to the active material for a period of time sufficient to remove silicon deposits with oxygen, wherein the carbonaceous deposits after ashing by oxygen is removed from the interior surface of the chamber remaining in the system based on these deposits on the surface of the chamber.

在较佳实施例中,使用于基于氧气的灰化过程中的含氧气体为O 2 ,且提供远程等离子体源中活性物质的含卤素气体为NF 3 Halogen containing gas in the preferred embodiment, based on the use of oxygen-containing gas in the ashing process is O 2, and a remote plasma source to provide an active material for NF 3.

虽然第1图的实施例系将基于氧气的灰化过程显示且描述为单一步骤100,在其它实施例中,基于氧气的灰化过程包括两个步骤。 Although the first embodiment according to FIG. 1 will be based on the oxygen ashing shown and described as a single step 100, in other embodiments, the oxygen-based ashing process comprises two steps. 例如,基于氧气的灰化过程可以包含一用以主要地清洁腔室面板的步骤,以及另一清洁除了面板以外的腔室内表面的步骤。 For example, based on the oxygen ashing step may comprise a cleaning chamber to the main panel and the other panel in addition to cleaning the interior surface of the cavity step. 例如,基于氧气的灰化过程可以包括以第一压力与第一面板至基材支撑件间隔来清洁面板,以及接着以第二压力与第二面板至基材支撑件间隔来清洁腔室的其它内表面。 For example, based on the oxygen ashing may include a first pressure with the first panel support member to the substrate to clean the panel interval, followed by a second pressure and the second panel support member to the substrate cleaning chamber intervals other The inner surface. 较佳者,相对于用来清洁腔室的其它内表面的压力与间隔而言,面板是被清洁在较高压力与较小的面板至基材支撑件间隔。 Are preferred, with respect to the inner surface of the other pressure chamber for cleaning and the spacer, the panel is to be cleaned substrate support member spaced at a higher pressure and smaller panels. 除了压力与间隔的外,其它处理条件(例如温度、RF功率、与含氧气体的流速)在面板清洁与腔室内表面清洁的期间可以不改变,并且可以位在相同于根据第1图实施例的单一步骤基于氧气的灰化过程的条件范围内。 In addition to the pressure outside the interval, other process conditions (e.g. temperature, the RF power, the flow rate of oxygen-containing gas) may not change during the panel surface to be cleaned and the cleaning chamber, and may be in the same position in a first embodiment according to FIG. a single step of the range of conditions based on the oxygen ashing process.

通过利用基于氧气的灰化过程来处理具有硅、碳、与氧沉积物在内表面上的腔室,许多碳沉积物可以被除去,这是因为基于氧气的灰化过程会氧化碳沉积物(例如CO 2 ,CO 2为可以轻易地从腔室除去的气体)。 By using oxygen-based ashing process chamber having a process to the surface of the silicon, carbon, and oxygen deposit account, many carbon deposits can be removed, since carbon dioxide will ashing deposit on oxygen ( such as gas CO 2, CO 2 that can be easily removed from the chamber). 第4图显示内部腔室表面在历经根据本发明一实施例所执行的基于氧气的灰化过程(在进行灰化0、30、60与90之后)的傅利叶转换红外线光谱仪(FTIR)光谱。 FIG 4 show the internal chamber surfaces over according to the oxygen-based ashing process (ashing is performed after 0,30,60 and 90) of the Fourier transform infrared spectroscopy (FTIR) spectroscopy to an embodiment of the embodiment of the present invention is performed. FTIR光谱显示出Si-CH 3峰随着基于氧气的灰化过程进行而缩减。 FTIR spectra showed Si-CH 3 peaks based ashing with oxygen being reduced. 所以,在基于氧气的灰化过程之后,残余的沉积物主要为含硅与氧沉积物,其可以通过使用仅由远程等离子体源(即不具有原位RF功率)产生的活性物质来除去。 Therefore, after the ashing process based on the oxygen, the residual oxygen and sediments mainly silicon deposits, which may be by a remote plasma source (i.e., without having in situ RF power) by using only the active substances be removed.

本发明的较佳实施例系概述于第3图中,且下文将详细地讨论。 Based preferred embodiment of the present invention is outlined in FIG. 3 embodiment, and the detail will be discussed below. 在第3图的实施例中,产生于远程等离子体源中的活性物质系用以清洁一处理腔室,其中该处理腔室系连接至远程等离子体源而不在处理腔室中于清洁过程期间使用RF功率。 In the embodiment of FIG. 3, the active substance produced in the remote plasma source line to clean a processing chamber, wherein the process chamber is connected to the remote plasma source lines during the cleaning process without processing chamber the use of RF power. 如第3图的步骤302所示,活性氧物质与活性氮物质被产生于一连接至处理腔室的远程等离子体源中。 As shown in step 302 of FIG. 3, reactive oxygen species and reactive nitrogen species are produced in a processing chamber coupled to the remote plasma source. 接着,活性氧物质与活性氮物质被导入处理腔室(如步骤304所示),并且处理腔室的内表面在处理腔室中不存在有RF功率下系暴露于活性氧物质与活性氮物质以从处理腔室除去含碳沉积物(如步骤306所示)。 Subsequently, reactive oxygen species and reactive nitrogen species is introduced into the processing chamber (as shown in step 304), and the inner surface of the processing chamber absence of active oxygen species and reactive nitrogen species is exposed to a RF power system in the processing chamber to remove the carbonaceous deposits from the process chamber (as shown in step 306). 较佳地,活性氧物质是从O 2产生。 Preferably, the active oxygen species is generated from the O 2. 活性氮物质是从例如N 2 、N 2 O、或NO 3产生。 Reactive nitrogen species are produced from, for example N 2, N 2 O, or NO 3.

活性氧物质与腔室内表面上的含碳沉积物反应,以形成挥发性氧与含碳副产物,其可以轻易地从腔室除去。 Reaction of carbonaceous deposits on the active oxygen species and the inner surface of the cavity, and oxygen to form volatile carbon-containing byproducts that can be easily removed from the chamber. 活性氮物质系促进用以提供活性氧物质的含氧气体的解离。 Reactive nitrogen species accelerating solution for providing oxygen-containing gas from the reactive oxygen species. 活性氮物质也有助于传送活性氧物质至腔室,且接着在处理腔室中以活化形式来释放活性氧物质。 Reactive nitrogen species may also facilitate the transfer of reactive oxygen species to the chamber, and then in the process chamber to release the active form of activated oxygen species.

选择性地,活性氟物质也被产生于远程等离子体源中,且被导入处理腔室。 Alternatively, the active fluorine species is also generated in a remote plasma source, and is introduced into the processing chamber. 活性氟物质对于从腔室除去含硅沉积物是有用的。 Active fluorine species for the removal of the silicon-containing deposits from the chamber is useful. 若处理腔室不是用来沉积包含硅的膜层(例如仅用来沉积非晶形碳膜层的腔室),较佳是不使用活性氟物质地来清洁腔室,这是因为活性氟物质会与含碳沉积物反应而在腔室表面上形成氟碳聚合物。 If the processing chamber is not used to deposit silicon-containing layers (e.g., only the chamber used to deposit the amorphous carbon layer), preferably without using active fluorine species to the cleaning chamber, this is because the active substance will fluoro the reaction with the carbonaceous deposits formed on the fluorocarbon polymer surface of the chamber. 另一方面,对于用来沉积非晶形碳膜层与SiON介电防反射涂层(dielectric anti-reflective coating,DARC)两者的腔室,所希望的是在清洁过程中包括活性氟物质以除去含硅沉积物。 On the other hand, is used for depositing the amorphous carbon layer and a SiON dielectric antireflective coating (dielectric anti-reflective coating, DARC) between the two chambers, it is desirable to include a substance active fluorine during the cleaning process to remove siliceous sediments.

较佳地,一惰性气体(例如氩、氦、或其它惰性气体)在产生活性物质的期间也存在于远程等离子体源中。 Preferably, an inert gas (e.g. argon, helium, or other inert gas) produced during the active substance also present in the remote plasma source. 惰性气体有助于稳定化远程等离子体源中的压力,且有助于传送活性物质至处理腔室。 An inert gas in a remote plasma source pressure helps stabilize and facilitate the transfer of the active material to the processing chamber. 惰性气体也可以被远程等离子体解离,且促进清洁过程。 Inert gas may be dissociated remote plasma, and facilitates the cleaning process. 惰性气体可以根据沉积物的类型被选择以从处理腔室被除去。 The inert gas can be selected to be removed from the process chamber depending on the type of sediment. 例如,氦可以被用做为清洁用来沉积含有硅、氧、碳、与氢的低介电常数膜层的处理腔室的惰性气体,而氩可以被用做为清洁用来沉积非晶形碳膜层或含有硅与碳但不含有氧的处理腔室的惰性气体。 For example, helium may be used as a cleaner for depositing silicon-containing, oxygen, carbon, inert gas treatment chamber and the low dielectric constant film is hydrogen, and argon can be used as a cleaner for depositing an amorphous carbon film layer or an inert gas containing silicon and carbon, but no oxygen in the processing chamber. 然而,任何惰性气体可以被用来清洁用来沉积本文所描述任何膜层的腔室。 However, any inert gas may be used to clean any film layers used herein deposition chamber described.

一旦活性氧物质、活性氮物质、与选择性的活性氟物质为在处理腔室中时,活性物质的清洁活性通过加热气体散布组件(包括面板与腔室壁)至至少约150℃温度来提升。 Once the reactive oxygen species, reactive nitrogen species, with selectivity to active fluorine species in the processing chamber when the cleaning activity of the active substance distribution assembly (including the chamber wall panel) by heating the gas to a temperature of at least about 150 deg.] C to improve . 加热这些腔室表面系通过在腔室中活化与/或建立额外的活性物质来加速清洁过程。 Heating the surface of the chamber through the line with activation chamber / or creating additional active substance to speed up the cleaning process. 在一方面中,腔室表面是通过在腔室中沉积一膜层于基材上完成之后且在整个清洁过程期间继续或维持住热而被加热,其中该热是在沉积期间典型地被施加在这些表面。 In one aspect, the chamber or the surface is and continues to sustain the heat is heated during the entire cleaning process by depositing a layer in the chamber after the completion on a substrate, wherein the heat is typically applied during the deposition these surfaces.

相对于使用原位RF功率而在腔室内提供等离子体的清洁过程而言,在此描述的基于远程等离子体的清洁过程具有一些优点。 For use with in situ RF power to the plasma is provided in the chamber cleaning process described herein has several advantages based remote plasma cleaning process. 例如,可以减少对腔室部件(例如面板)的损坏,这是因为等离子体系被远程地而非原位地提供。 For example, it is possible to reduce damage to chamber components (e.g., panel), this is because the plasma system is provided in situ, rather than remotely. 面板上氟化铝微粒的形成也通过远程地而非原位地提供等离子体而被减少。 Particulate aluminum fluoride is formed on the panel are also provided by the remote plasma is not reduced in situ. 远程等离子体源提供的活性物质可以抵达难以利用原位RF功率来清洁的腔室区域,例如腔室狭缝阀(slit valve)或基材通道、排气端口、与腔室底部,这是因为其不是位在腔室的等离子体处理区域中。 Remote plasma source to provide an active material can reach the region of the chamber difficult to clean in situ RF power, the chamber slit valve (slit valve) or channels of the substrate, an exhaust port, the bottom of the chamber, for example, because which is not located in the plasma processing region of the chamber. 再者,在此描述的基于远程等离子体的清洁过程可以比基于原位氧等离子体的清洁过程提供更高的蚀刻速率,其中该基于原位氧等离子体的清洁过程会在腔室表面上造成残余物或沉积物的等离子体致密化。 Further, in the cleaning process described herein may result in in situ oxygen plasma on the surface of the chamber based remote plasma cleaning process can provide a higher etch rate than the cleaning process based in situ oxygen plasma, wherein based on the residues or deposits plasma densification. 等离子体致密化的残余物是更难以蚀刻,且因此会减缓清洁过程。 The residue was plasma densification is more difficult to etch, and thus slows down the cleaning process.

为了进一步加强腔室底部的清洁,来自远程等离子体源的活性物质可以经由一分向线(其系从远程等离子体源延伸进入腔室底部)被导入腔室底部,使得一些活性物质被导入腔室而不会先通过腔室的气体散布组件。 In order to further strengthen the bottom of the chamber clean, the active substance may be from a remote plasma source (which lines extending from the remote plasma source into the bottom chamber) via a sub-line is introduced into the bottom of the chamber, so that some of the active substance is introduced into the chamber without first chamber through the gas distribution assembly chamber.

清洁用来沉积含硅与碳的膜层的腔室 For cleaning silicon and carbon layer deposition chamber

对于用以沉积与/或后处理含硅与碳的膜层(例如含硅与碳阻障膜层,以及含硅、碳、氧与氢的低介电常数膜层(譬如k<2.5))的腔室,在此提供的腔室清洁方法是特别有用的。 Used for deposition / or post-treated with a silicon-containing carbon film (e.g., silicon carbon barrier layer, and a silicon, carbon, oxygen and hydrogen in the low dielectric constant film (for example k <2.5)) chamber, the chamber cleaning method provided herein is particularly useful. 例如,低介电常数膜层可以通过从包括一有机硅化合物与一烃基化合物的沉积气体混合物来进行等离子体强化化学气相沉积而沉积。 For example, low dielectric constant film may be deposited by enhanced chemical vapor deposition from an organic silicon compound comprises a compound with a hydrocarbon gas mixture plasma deposition. 如同在此所定义者,烃基化合物系包括仅具有碳与氢的碳氢化合物,以及主要具有碳与氢但是也包括其它原子(例如氧或氮)的化合物。 As defined herein are hydrocarbyl-based compound having a hydrocarbon comprising only carbon and hydrogen, and a compound having a primary carbon but also other hydrogen atom (e.g., oxygen or nitrogen). 沉积气体混合物也可以包括其它成分,例如氧化气体与多个有机硅化合物。 Deposition gas mixture may also comprise other ingredients, such as oxidation gas and a plurality of organosilicon compounds. 用来调整膜层性质(例如增加孔隙度与改善机械性质)之后处理系包括等离子体、UV、与电子束处理。 After adjustment for film properties (e.g., increased porosity and improve the mechanical properties) processing system comprising a plasma, UV, and electron beam treatment. 沉积这样低介电常数膜层的方法系描述于共同受让的美国专利案号US6,936,551与美国专利公开案号US2004/0101633中,其在此被并入本文以做为参考。 Such low dielectric constant film is deposited based method described in commonly assigned U.S. Pat. Nos US6,936,551 and U.S. Patent Publication No. US2004 / 0101633, which is incorporated herein by herein by reference.

下文将提供通过第3图清洁过程来清洁用以沉积含硅与碳且选择性氧膜层的腔室的过程条件。 Hereinafter will be provided to clean the process conditions for depositing a silicon-containing carbon film and the selective oxidation of the chamber through the third cleaning process in FIG. 活性氧物质与活性氟物质可以为自由基、离子化物质、或激化状态的物质。 Reactive oxygen species and active fluorine species may be a radical, ionic substances, or substances intensification state. 活性氧物质系从含氧气体所产生,例如O 2 、O 3 、CO 2 、与其组合物。 Based reactive oxygen species generated from oxygen-containing gas such as O 2, O 3, CO 2 , and its composition. 活性氟物质系从含氟气体所产生,例如NF 3 、CF 4 、C 2 F 4 、C 2 F 6 、F 2 、与其组合物。 Active fluorine species generated from the fluorine-based gas such as NF 3, CF 4, C 2 F 4, C 2 F 6, F 2, and its composition. 在一较佳实施例中,活性氧物质是从O 2产生,且活性氟物质是从NF 3产生。 In a preferred embodiment, the reactive oxygen species is generated from O 2, and fluorine active species are generated from NF 3. 活性氧物质能够以第一流速从远程等离子体源被导入处理腔室,且活性氟物质能够以第二流速从远程等离子体源被导入处理腔室。 Reactive oxygen species can be introduced into the first flow rate to the processing chamber from the remote plasma source, and fluorine active species can be introduced into the second flow rate being the processing chamber from the remote plasma source. 较佳地,活性氧物质是从O 2产生,且活性氟物质是从NF 3产生。 Preferably, the active oxygen species is produced from O 2, and fluorine active species are generated from NF 3.

我们观察到的是,对于控制清洁过程的蚀刻速率,从NF 3产生的活性物质的流速对从O 2产生的活性物质的流速的比值(在此简写为NF 3 :O 2比值)是一个重要变量。 We observed that, for controlling the cleaning process, the etching rate, the flow rate of the active material generated from NF 3 ratio of the flow rate of the active material generated from the O 2 (here abbreviated as NF 3: O 2 ratio) is an important variable. 最佳地,NF 3 :O 2比值约0.083(1:12)。 Most preferably, NF 3: O 2 ratio of about 0.083 (1:12). 我们亦观察到的是,虽然大部分硅可以在更高的NF 3 :O 2比值从腔室表面上残余物除去,在更高的NF 3 :O 2比值完成腔室清洁过程之后,会残留松弛的固体碳与含氟残余物。 We also observed that, although most of the silicon 3 can be at a higher NF: O 2 ratio of residue is removed from the upper surface of the chamber, at a higher NF 3: O 2 ratio after completion of the cleaning process chamber, may remain relaxation fluorine-containing solid carbonaceous residue.

选择性地,可以使用一载气或稀释气体(例如氩或氦)以促进活性物质从远程等离子体源传送至处理腔室。 Alternatively, you can use a dilution gas or a carrier gas (e.g., argon or helium) to facilitate the active substance from the remote plasma source to the process chamber.

处理腔室的内表面暴露于活性物质一段足以除去含硅与碳沉积物的时间,其中该沉积物系先前腔室中在沉积含硅与碳膜层期间(例如从包含有机硅化合物与烃基化合物的混合物所沉积的低介电常数膜层)形成在处理腔室的内表面上。 The inner surface of the processing chamber is exposed to a period of time sufficient to remove the active material and the silicon-containing carbon deposits, the deposit system in which the previous chamber during deposition and the silicon-containing carbon layer (e.g. from a hydrocarbon group containing compound with an organic silicon compound the mixture is deposited low dielectric constant film) formed on the inner surface of the processing chamber.

在腔室的内表面暴露于活性物质的期间,腔室压力可以介于约1托与约2.8托之间。 The inner surface of the chamber during exposure to the active substance, the chamber pressure may be between about 1 Torr and about 2.8 Torr. 更高的腔室压力会造成更低的蚀刻速率。 Higher chamber pressure will cause lower etch rate. 所相信的是,更高的压力会加速活性物质的再结合成为较不活性的物质,例如氟自由基会再结合而形成F 2 ,而更低的压力会提升活性物质传送至难以清洁的腔室区域。 It is believed that higher pressures will accelerate recombined active material becomes less active substances such as fluorine free radicals recombine to form F 2, and lower pressures to enhance the active substance to be difficult to clean chamber room area.

所相信的是,将NF 3与O 2两者暴露于远程等离子体源中的等离子体条件会产生OF自由基,OF自由基可以解离成氧与氟自由基,氧与氟自由基会与腔室中含碳与氢残余物反应而形成可以轻易地从腔室除去的CO与HF挥发性副产物。 It is believed that the NF 3 and O 2 is exposed to both the remote plasma source generates plasma conditions OF radicals OF radicals may dissociate into oxygen and fluorine radicals, fluorine and oxygen free radicals and with hydrogen in the chamber carbonaceous residue formed by the reaction of CO with HF volatile byproducts can be easily removed from the chamber. 相对于NF 3与O 2两者在被导入处理腔室之前暴露于远程等离子体源中等离子体条件的清洁过程,习知使用类似于在此所提供过程条件(除了O 2是从远程等离子体源下游而非从远程等离子体源内被提供至处理腔室的外)的清洁过程系显著地降低蚀刻速率。 NF 3 with respect to both of the O 2 is introduced into the processing chamber before exposure to the remote plasma source cleaning process plasma conditions, using similar conventional process conditions provided herein (except from the remote O 2 plasma rather than being supplied from a source downstream of the remote plasma source to the processing chamber outer) based cleaning process significantly reduces the etch rate.

当O 2从远程等离子体源下游被提供至处理腔室时,缺少NF 3与O 2的激化且潜在的活性物质已经被证实会缺乏等离子体中的余晖发光(luminescence of the afterglow)。 When O 2 is supplied from the downstream of the remote plasma source to the processing chamber, the lack of NF 3 and O 2 and intensification potentially active substance has been shown to lack the afterglow emission (luminescence of the afterglow) plasma. 余晖发光通常发生在当NF 3与O 2两者在被导入处理腔室之前暴露于远程等离子体源中等离子体条件的时。 Afterglow emission generally occurs when both of NF 3 and O 2 before being introduced into the processing chamber is exposed to a remote plasma source in a plasma condition. 因此,观察到的NF 3与O 2等离子体余晖发光可以被用来监视处理腔室中清洁速率条件,除了使用余晖(afterglow)做为清洁过程的终点指示以外。 Thus, the observed NF 3 and O 2 plasma afterglow emission can be used to monitor the process chamber cleaning rate conditions, except that the afterglow (Afterglow) except as indicated endpoint of the cleaning process. 在一实施例中,NF 3与O 2等离子体余晖发光的强度可以通过此技术领域熟知的传统光度计(luminometer)来测量。 In one embodiment, NF 3 and O 2 plasma afterglow luminescence intensity may be well known in this technical field conventional photometer (a luminometer) measured. 更高的经测量强度值代表等离子体中更高的NF 3与O 2激化物质浓度。 Higher values represent the intensity measured in the plasma of NF 3 and higher O 2 concentration of the substance intensified. 因此,经测量的强度值可以被用做为过程参数(例如流速、温度、与RF功率)如何影响等离子体中NF 3与O 2激化物质的形成与因而清洁速率条件的指针。 Thus, the measured intensity values can be used as a process parameter (e.g., flow rate, temperature, RF power) affect plasma NF 3 O 2 pointer is formed with the material and thus intensifying the cleaning rate conditions. 清洁过程期间发光强度值的增加也可以被用做为清洁过程的终点指示。 Increase the luminous intensity value during the cleaning process may also be used as an indication of the end of the cleaning process. 当清洁过程被启始时,等离子体中NF 3与O 2激化物质会与腔室中含碳与氢残余物反应。 When the cleaning process is starting, the NF 3 plasma and O 2 will intensify the carbonaceous material with hydrogen to react with the residue in the chamber. 一旦除去了含碳与氢残余物之后,NF 3与O 2激化物质的浓度会增加,这是因为不太有激化物质会与含碳与氢残余物反应。 Once the removal of hydrogen and carbon-containing residues, NF 3 and O 2 concentration of the substance intensification will increase, because there is less material will intensify the reaction with the carbonaceous residues with hydrogen.

较佳地,腔室的内表面在腔室内表面暴露于活性物质的期间被加热到至少约150℃温度。 Preferably, the inner surface of the chamber is heated to a temperature of at least about 150 deg.] C during the exposure to the active surface of the chamber material. 内表面可以通过腔室中一加热基材支撑件与一加热气体散布组件来加热。 The inner surface may be heated by a heating chamber, a substrate support and heating the gas distribution assembly. 加热腔室的内表面会透过在腔室中活化与/或建立额外的活性物质来加速清洁过程。 Heating the inner surface of the chamber through the chamber will be activated and / or creating additional active substance to speed up the cleaning process. 例如,在被加热到至少约150℃温度的表面上,相当不活性的清洁气体O 3将会解离,且提供活性氧物质。 For example, the heated to a temperature of at least about 150 ℃ surface, quite reactive cleaning gas will dissociate O 3, and provides a reactive oxygen species. 加热气体散布组件的面板会尤其加速清洁过程,这是因为面板可以允许更多活性物质进入腔室其它部分中。 Heating the gas distribution panel assembly in particular accelerate the cleaning process, since the panel may allow more other active substances into the chamber portion.

清洁用来沉积非晶形碳膜层的腔室 Cleaning for depositing an amorphous carbon layer chamber

如前所讨论者,用来沉积非晶形探膜层的处理腔室可以通过将处理腔室的内表面暴露于活性氧物质与活性氮物质而不存在有活性氟物质来清洁,其中该活性氧物质与活性氮物质是由一远程等离子体源所产生,亦即不具有被远程等离子体源提供的活性氟物质或通过在腔室中导入氟源且施加功率而产生的活性氟物质。 As previously discussed are used to deposit an amorphous film exploration process chamber by the inner surface of the process chamber is exposed to reactive oxygen species and reactive nitrogen species without the presence of active fluorine species to clean, wherein the active oxygen material and reactive nitrogen species are generated by a remote plasma source, i.e. not having a remote plasma source to provide the active substance or active fluorine fluorine species generated by introducing fluorine source in the chamber and power is applied. 此外,如前所讨论者,腔室的内表面被加热于一温度,例如至少约150℃的温度。 Further, as previously discussed by the inner surface of the chamber is heated at a temperature, for example at least a temperature of about 150 deg.] C.

用来沉积非晶形碳膜层的处理腔室可以为 For depositing the amorphous carbon layer may be a process chamber or 腔室,该两者皆可以由Applied Materials,lnc.公司所获得。 Chamber, which may be both of which are obtained from the Applied Materials, lnc. Company. 远程等离子体源可以为从MKS Instruments公司获得的 The remote plasma source can be obtained from MKS Instruments Company 远程等离子体源。 Remote plasma source. 但是,可以使用其它处理腔室与远程等离子体源。 However, other processing chamber and remote plasma source.

远程等离子体源所提供用以产生活性物质的功率可以高达10千瓦。 Remote plasma source to provide power to generate the active material may be up to 10 kilowatts. 活性氧物质能够以第一流速从远程等离子体源被导入处理腔室,活性氮物质能够以第二流速从远程等离子体源被导入处理腔室。 Reactive oxygen species can be introduced into the first flow rate to the processing chamber from the remote plasma source, reactive nitrogen species can be introduced into the second flow rate to the processing chamber from the remote plasma source. 较佳地,活性氧物质是由O 2产生。 Preferably, the active oxygen species is generated by O 2.

选择性地,可以使用一载气或稀释气体(例如氩或氦)以促进活性物质从远程等离子体源传送至处理腔室。 Alternatively, you can use a dilution gas or a carrier gas (e.g., argon or helium) to facilitate the active substance from the remote plasma source to the process chamber.

在腔室内表面暴露于活性物质的期间,腔室压力可以介于约1托与约2托之间。 During the chamber surfaces exposed to the active substance, the chamber pressure may be between about 1 Torr and about 2 Torr.

根据本发明的另一方面,一清洁过程系用以清洁用来沉积非晶形碳膜层的处理腔室,其中该清洁过程包含:在连接至处理腔室的远程等离子体源中自一含氧气体产生活性氧物质且自一含氟气体产生活性氟物质;导引活性氧物质与活性氟物质进入处理腔室;以及在腔室中不存在有RF功率下将腔室内表面暴露于活性氧物质与活性氟物质。 According to another aspect of the present invention, a cleaning system for cleaning a processing chamber for depositing an amorphous carbon layer, wherein the cleaning process comprises: a self-contained oxygen is connected to the processing chamber of a remote plasma source generation of reactive oxygen species and body from a fluorine-containing gas to produce fluorine active species; guide reactive oxygen species and active fluorine species into the processing chamber; does not exist in the chamber and has an RF power in the chamber is exposed to the surface of the active oxygen species and active fluorine species. 尤其,对于欲除去先前在一等离子体强化化学气相沉积(PECVD)反应中从芳香族前驱物(例如甲苯、环状化合物、不饱和碳氢化合物)沉积非晶形碳膜层期间所形成在处理腔室内表面上的沉积物,这样的清洁过程是有用的。 In particular, to be removed prior to the enhanced chemical vapor deposition (PECVD) from the reaction of aromatic precursors in a plasma (e.g., toluene, cyclic compounds, unsaturated hydrocarbons) formed in the processing chamber during deposition of the amorphous carbon layer deposits on the interior surface, this cleaning process is useful. 在从这样之前驱物沉积非晶形碳膜层的期间所形成的沉积物常常包括大的聚合含碳残余物,这些残余物是比从短链线性碳氢化合物(例如丙烯或乙炔)沉积非晶形碳膜层的期间所形成的沉积物更难以除去。 Deposit the amorphous carbon film during the deposition layer from the so formed precursor often includes a large polymeric carbonaceous residues, these residues than the short chain linear hydrocarbons (e.g., propylene, or acetylene) deposition of amorphous sediment formed during the carbon layer is more difficult to remove. 值得注意的是,在此提供用来清洁从芳香族前驱物(例如甲苯、其它环状化合物、不饱和碳氢化合物)沉积非晶形碳膜层的腔室的清洁过程,也可以被用来清洁从其它碳氢化合物(例如短链线性碳氢化合物,像是丙烯或乙炔)沉积非晶形探膜层的腔室。 Notably, there is provided for cleaning from an aromatic precursor (e.g., toluene, other cyclic compounds, unsaturated hydrocarbons) deposition chamber cleaning process the amorphous carbon layer, it may also be used to clean depositing a layer of amorphous probe chamber from the other hydrocarbons (e.g., short-chain linear hydrocarbons, such as propylene, or acetylene).

用来沉积非晶形碳膜层的处理腔室可以为 For depositing the amorphous carbon layer may be a process chamber or 腔室,该两者皆可以由Applied Materials,lnc.公司所获得。 Chamber, which may be both of which are obtained from the Applied Materials, lnc. Company. 远程等离子体源可以为从MKS Instruments公司获得的 The remote plasma source can be obtained from MKS Instruments Company 远程等离子体源。 Remote plasma source. 但是,可以使用其它处理腔室与远程等离子体源。 However, other processing chamber and remote plasma source.

远程等离子体源所提供用以产生活性物质的功率可以高达10千瓦。 Remote plasma source to provide power to generate the active material may be up to 10 kilowatts. 活性氧物质能够以介于约1000sccm与约4000sccm之间流速从远程等离子体源被导入处理腔室,活性氮物质能够以介于约50sccm与约500sccm之间流速从远程等离子体源被导入处理腔室。 Reactive oxygen species can be between about 4000sccm about 1000sccm flow rate is introduced into the processing chamber from the remote plasma source, nitrogen species can be active at a flow rate between about 50sccm to about 500sccm and is introduced between the process chamber from the remote plasma source room. 较佳地,活性氧物质是由O 2产生,且活性氟物质是由NF 3产生。 Preferably, the active oxygen species is generated by O 2, and fluorine active species is generated by the NF 3. 观察到的是,对于控制清洁过程的蚀刻速率,从NF 3产生的活性物质的流速对从O 2产生的活性物质的流速的比值(在此简写为NF 3 :O 2比值)是一个重要变量。 Observed that, for controlling the cleaning process, the etching rate, the flow rate of the active material generated from NF 3 contrast ratio velocity of the active material generated from the O 2 (here abbreviated as NF 3: O 2 ratio) is an important variable . 较佳地,NF 3 :O 2比值系介于约0.1(1:10)与约0.3,这是因为更高与更低的比值会造成较低的蚀刻速率。 Preferably, NF 3: O 2 ratio is between about 0.1 lines (1:10) and about 0.3, since higher and lower ratios may cause lower etch rate. 最佳地,NF 3 :O 2比值为约0.1。 Most preferably, NF 3: O 2 ratio of about 0.1.

选择性地,可以使用一载气或稀释气体(例如氩或氦)以促进活性物质从远程等离子体源传送至处理腔室。 Alternatively, you can use a dilution gas or a carrier gas (e.g., argon or helium) to facilitate the active substance from the remote plasma source to the process chamber. 载气或稀释气体进入处理腔室的流速可以介于约0sccm与约3000sccm或甚至高达9000sccm。 The flow rate of carrier gas or dilution gas into the processing chamber may be between about 0sccm and about 3000sccm or even up to 9000sccm. 对于使用氩做为载气或稀释气体的清洁过程与使用氦做为载气或稀释气体的清洁过程,可以得到比较的蚀刻速率。 For a cleaning process using argon as the carrier gas and helium as a dilution gas or a carrier gas cleaning process or dilution gas, the etching rate can be compared. 此两清洁过程最佳的NF 3 :O 2比值为0.1。 This cleaning process two optimum NF 3: O 2 ratio of 0.1. 当在NF 3 :O 2比值0.1使用氦而非氩做为载气或稀释气体时,可以观察到稍高的蚀刻速率。 3 when in NF: O 2 ratio of 0.1 instead of argon helium as a carrier gas or diluent gas can be observed a slightly higher etch rate.

NF 3 、O 2与选择性的载气的总流速可以介于约2000sccm与约6000sccm之间。 NF 3, the total flow rate of the carrier gas and the O 2 selectivity may be between about 2000sccm and about 6000sccm. 在更高的总流速下,可以获得更高的蚀刻速率。 At higher total flow rate, a higher etch rate.

在腔室内表面暴露于活性物质的期间,腔室压力可以介于约1托与约2托之间。 During the chamber surfaces exposed to the active substance, the chamber pressure may be between about 1 Torr and about 2 Torr. 腔室压力高于约2托时,可以观察到蚀刻速率的显著下降。 When the chamber pressure above about 2 torr, can be observed a significant decrease in etch rate.

基材支撑件的温度可以设定成介于约300℃与约400℃。 The substrate support temperature may be set to between about 300 deg.] C and about 400 ℃. 较佳地,气体散布组件可以被加热至约160℃的温度,而使得面板去有约160℃的温度。 Preferably, the gas distribution assembly may be heated to a temperature of about 160 ℃, such that the panel to a temperature of about of 160 ℃. 然而,气体散布组件也可以被加热至较低的温度,例如介于约75℃与约160℃。 However, the gas distribution assembly may be heated to a lower temperature, for example between about 75 deg.] C and about 160 ℃. 所观察到的是,在更高的气体散布组件加热器温度会增加蚀刻速率。 It observed that the higher the gas distribution assembly in the heater temperature increases the etch rate. 然而,在75℃加热器温度,可以观察到令人满意的大于8000埃/分钟的蚀刻速率。 However, the heater temperature 75 ℃, can be observed a satisfactory etch rate of greater than 8000 Å / min.

基材支撑件与气体散布组件的面板之间间隔可以介于约200密尔与约1000密尔。 The spacing between the gas distribution faceplate and the substrate support assembly may be between about 200 mils and about 1000 mils.

处理腔室的内表面暴露于活性物质一段足以从腔室内表面除去含硅与氧沉积物的时间。 The inner surface of the processing chamber is exposed to a period of time sufficient to remove the active material containing silicon and oxygen from the interior surface of the chamber deposits. 例如,对于每1000埃沉积物厚度,处理腔室的内表面可以暴露于活性物质约35秒。 For example, for a thickness of 1000 angstroms each deposit, the inner surface of the processing chamber may be exposed to the active material of about 35 seconds.

以下将描述一实施例的实例。 Examples of an embodiment will be described below.

实例1 Example 1

腔室通过以下程序来清洁:在一 Chambers cleaned by the following procedure: In a 远程等离子体源中产生活性氧物质与活性氟物质;导引活性氧物质与活性氟物质进入 Remote plasma source generated reactive oxygen species and active fluorine species; reactive oxygen species and guiding substances into active fluorine 腔室;以及在腔室中不存在有RF功率将腔室内表面暴露于活性物质150秒,以除去约6000埃的含硅、氧与碳的低介电常数膜层。 A chamber; and there is no RF power in the chamber is exposed to the surface of the active material 150 seconds to remove the low dielectric constant film of about 6000 angstroms silicon, oxygen and carbon in the chamber. 此低介电常数膜层已经在先前于PECVD过程中从含有甲基二乙氧基硅烷(methyldiethoxysilane,mDEOS)、降冰片二烯(norbornadiene,BCHD)、与氧的混合物被沉积于腔室中。 This has been in the low dielectric constant film containing a PECVD process from methyldiethoxysilane (methyldiethoxysilane, mDEOS) previously, norbornadiene (norbornadiene, BCHD), a mixture of oxygen and is deposited in the chamber. 活性氧物质以约6000sccm流速从远程等离子体源被导入腔室。 Active oxygen species of about 6000sccm flow is introduced into the chamber from a remote plasma source. 活性氟物质以约500sccm流速从远程等离子体源被导入腔室。 Active fluorine species flow rate of about 500sccm is introduced into the chamber from a remote plasma source. 氦被用做为载气,且以约6000sccm流速流入腔室。 Helium was used as carrier gas, and a flow rate of about 6000sccm flow into the chamber. 在腔室内表面暴露于活性物质的期间,腔室压力约为2.8托。 During the chamber surfaces exposed to the active substance, the chamber pressure is about 2.8 Torr. 气体散布组件(包括面板与腔室壁)在内表面暴露于活性物质的期间被加热。 During the gas distribution assembly (including the chamber wall panel) exposed to the inner surface of the active material is heated. 面板至基材支撑件之间隔约为1800密尔。 Spaced substrate support panel to approximately 1800 mils.

虽然前述系着重在本发明的实施例,本发明的其它与进一步实施例可以在不脱离其基本范围下进行构思,且本发明范围系由随附的申请专利范围所决定。 While the foregoing is directed to embodiments of the present system of the invention, the present invention can be further contemplated without departing from the essential scope thereof and further embodiments, and the scope thereof is determined by the Department of the scope of the appended patent.

Claims (20)

1.一种用于清洁一包含有多个腔室壁与一气体散布组件的处理腔室的方法,该气体散布组件具有一面板,该方法包括: 1. A method for cleaning a chamber comprising a plurality of walls and a method for processing chamber gas distribution assembly, the assembly having a gas distribution panel, the method comprising:
在一远程等离子体源中从一含氧气体产生活性氧物质,其中该远程等离子体源连接至该处理腔室; Reactive oxygen species from an oxygen-containing gas in a remote plasma source, wherein the remote plasma source coupled to the processing chamber;
在该远程等离子体源中从一含氮气体产生活性氮物质; Generating active nitrogen species from a nitrogen-containing gas in the remote plasma source;
导引该活性氧物质与该活性氮物质进入该处理腔室;以及 Guiding the reactive oxygen species and reactive nitrogen species that enter the process chamber; and
在腔室中不存在有RF功率的情况下将该处理腔室的多个内表面暴露于该活性氧物质与该活性氮物质,而同时加热该气体散布组件与这些腔室壁,其中将多个内表面暴露于该活性氧物质与该活性氮物质可除去先前在该处理腔室中沉积一非晶形碳膜层期间形成于该处理腔室的内表面上的含碳沉积物。 The case where the RF power has a plurality of inner surfaces of the processing chamber is exposed to the reactive oxygen species and reactive nitrogen species which, whilst heating the gas distribution assembly and the chamber wall, wherein the plurality is not present in the chamber an inner surface exposed to the active oxygen species and active nitrogen species to the deposition of carbonaceous deposits may be previously formed on the inner surface of the processing chamber during an amorphous carbon layer in the processing chamber is removed.
2.如权利要求1所述的方法,其中这些内表面被暴露于该活性氧物质与该活性氮物质,而不暴露于活性氟物质。 2. The method according to claim 1, wherein the inner surface is exposed to the reactive oxygen species and reactive nitrogen species which, without being exposed to active fluorine species.
3.如权利要求1所述的方法,其中该活性氧物质是从O 2产生的,且该活性氮物质是从NF 3产生的。 The method according to claim 1, wherein the active oxygen species is generated from O 2, and is the active nitrogen species generated from NF 3.
4.如权利要求3所述的方法,其中从NF 3产生的活性物质流入该处理腔室的流速与从O 2产生的活性物质流入该处理腔室的流速的比值介于约0.1与约0.3之间。 4. The method according to claim 3, wherein the active material generated from the flow rate of NF 3 flows into the processing chamber with the active material generated from the ratio of O 2 flows into the processing chamber at a flow rate of between about 0.1 and about 0.3 between.
5.如权利要求4所述的方法,其中该处理腔室的内表面在介于约1托与约2托之间的腔室压力下暴露于该活性氧物质与该活性氮物质。 5. The method according to claim 4, wherein the inner surface of the processing chamber between the exposure to the active oxygen species and reactive nitrogen species under the chamber pressure between about 1 Torr and about 2 Torr.
6.如权利要求1所述的方法,其中该非晶形碳膜层是通过PECVD过程从一包含甲苯的气体混合物中沉积的。 6. The method of claim 1, wherein the amorphous carbon layer is deposited by a PECVD process from a gas mixture comprising toluene claim.
7.如权利要求1所述的方法,还包括测量在该处理腔室中该活性氧物质与该活性氮物质的余晖发光。 7. The method according to claim 1, further comprising measuring the afterglow of the active oxygen species and active nitrogen species in the light emission processing chamber.
8.一种用于清洁一包含有多个腔室壁与一气体散布组件的处理腔室的方法,该气体散布组件具有一面板,该方法包含: 8. A method for cleaning a chamber comprising a plurality of walls and a method for processing chamber gas distribution assembly, the assembly having a gas distribution panel, the method comprising:
在一远程等离子体源中从一含氧气体产生活性氧物质,其中该远程等离子体源连接至该处理腔室; Reactive oxygen species from an oxygen-containing gas in a remote plasma source, wherein the remote plasma source coupled to the processing chamber;
在该远程等离子体源中从一含氟气体产生活性氟物质; Active fluorine generating a fluorine-containing gas species from the remote plasma source;
导引该活性氧物质与该活性氟物质进入该处理腔室;以及 Guiding the reactive oxygen species and the active fluorine substances into the processing chamber; and
在腔室中不存在有RF功率的情况下将该处理腔室的多个内表面暴露于该活性氧物质与该活性氟物质,同时加热该气体散布组件与这些腔室壁,其中将多个内表面暴露于该活性氧物质与该活性氟物质可除去先前在该处理腔室的内表面上形成的含硅与碳的沉积物。 An RF power at the surface exposed to the case where the active oxygen species with the active substance in a plurality of fluorine in the process chamber, while heating the assembly wall and the gas distribution chambers do not exist in the chamber, wherein a plurality of the inner surface is exposed to the active oxygen species with the active substance may be removed fluoro silicon and carbon deposits previously formed on the inner surface of the processing chamber.
9.如权利要求8所述的方法,其中该活性氧物质是从O 2产生的,且该活性氟物质是从NF 3产生的。 9. The method according to claim 8, wherein the active oxygen species is generated from O 2, and the active substance is produced from a fluorine NF 3.
10.如权利要求9所述的方法,其中从NF 3产生的活性物质流入该处理腔室的流速与从O 2产生的活性物质流入该处理腔室的流速的比值约为1:12。 10. The method according to claim 9, wherein the active material generated from the flow rate of NF 3 flows into the processing chamber with a ratio of flow rate of the process chamber from flowing into the active material of about 1:12 O 2 generated.
11.如权利要求10所述的方法,其中该处理腔室的内表面在介于约1托与约2.8托之间的腔室压力下暴露于该活性氧物质与该活性氟物质。 11. The method of claim 10, wherein the inner surface of the processing chamber is exposed to the reactive oxygen species and the active substance-fluoro between chamber pressure between about 1 torr and 2.8 torr at about.
12.如权利要求8所述的方法,其中在该处理腔室中从包含有机硅化合物与烃基化合物的混合物来沉积一低介电常数膜层的期间,形成该含硅与碳的沉积物。 12. The method according to claim 8, wherein the organosilicon compound comprises a mixture of the hydrocarbon compound in the processing chamber to deposit a low dielectric constant film during the forming deposit the silicon and carbon.
13.如权利要求8所述的方法,还包括测量在该处理腔室中该活性氧物质与该活性氮物质的余晖发光。 13. The method according to claim 8, further comprising measuring the afterglow of the active oxygen species and active nitrogen species in the light emission processing chamber.
14.一种用于清洁一处理腔室的方法,包括: 14. A method for cleaning a processing chamber, comprising:
在该处理腔室中执行一基于氧气的灰化; Performing an oxygen-based ashing process in the chamber;
在一远程等离子体源中从一含卤素气体产生活性物质,其中该远程等离子体源连接至该处理腔室;以及 In a remote plasma source from a halogen-containing gas to produce an active material, wherein the remote plasma source coupled to the processing chamber; and
在该处理腔室中不存在有RF功率的情况下将该处理腔室的多个内表面暴露于该活性物质。 Without the presence of RF power to the processing chamber at a plurality of surfaces of the process chamber exposed to the active substance.
15.如权利要求14所述的方法,其中该基于氧气的灰化包括导入一含氧气体至该处理腔室并且在该处理腔室中施加RF功率以产生活性氧物质,且在将该处理腔室的多个内表面暴露于来自含卤素气体的活性物质之前该RF功率被终止。 15. The method according to claim 14, wherein the oxygen-based ashing comprises introducing an oxygen-containing gas to the processing chamber and applying RF power in the processing chamber to generate active oxygen species, and, in the process a plurality of inner surfaces of the chamber exposed to the RF power being terminated before the active substance from the halogen-containing gas.
16.如权利要求15所述的方法,其中该基于氧气的灰化包括导入O 2至该处理腔室,且该含卤素气体为NF 3 16. The method according to claim 15, wherein the oxygen-based ashing comprising introducing O 2 into the process chamber, and the halogen-containing gas is NF 3.
17.如权利要求14所述的方法,其中该处理腔室包含一面板与一基材支撑件,且该基于氧气的灰化包括以第一压力与第一面板至基材支撑件的间隔来清洁该面板以及以第二压力与第二面板至基材支撑件的间隔来清洁该处理腔室的其它表面。 17. The method according to claim 14, wherein the processing chamber comprises a panel and a substrate support member, and the oxygen-based ashing comprising spaced first pressure with the first panel support member to the substrate to cleaning of the panel and the second panel at a second pressure to the spacer substrate support to clean other surfaces of the process chamber.
18.如权利要求14所述的方法,其中该含卤素气体是含氟气体或含氯气体。 18. The method according to claim 14, wherein the halogen-containing gas is fluorine gas or a chlorine-containing gas.
19.如权利要求14所述的方法,其中该基于氧气的灰化与将该处理腔室的多个内表面暴露于该活性物质可除去在该处理腔室内表面上的硅、碳与氧沉积物,这些沉积物是先前在该处理腔室中从包含有机硅化合物与烃基化合物的混合物来沉积一低介电常数膜层的期间所形成的。 19. The method as claimed in claim 14, wherein the plurality of the ashing process chamber and the oxygen-based surface active material may be exposed to the removal of the processing chamber on a surface of the cavity of silicon, oxygen and carbon deposition was previously these deposits from a mixture containing an organic silicon compound and the hydrocarbon compound in the processing chamber are deposited during formation of a low dielectric constant film.
20.如权利要求14所述的方法,还包括测量在该处理腔室中该活性氧物质与该活性氮物质的余晖发光。 20. The method according to claim 14, further comprising measuring the afterglow of the active oxygen species and active nitrogen species in the light emission processing chamber.
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