CN101643895A - Plasma reaction chamber pretreatment method - Google Patents
Plasma reaction chamber pretreatment method Download PDFInfo
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- CN101643895A CN101643895A CN200810117724A CN200810117724A CN101643895A CN 101643895 A CN101643895 A CN 101643895A CN 200810117724 A CN200810117724 A CN 200810117724A CN 200810117724 A CN200810117724 A CN 200810117724A CN 101643895 A CN101643895 A CN 101643895A
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- reaction chamber
- plasma
- pretreatment method
- slide glass
- fluorocarbon gas
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Abstract
The invention discloses a plasma reaction chamber pretreatment method. Before executing a processing operation for a substrate introduced into a reaction chamber by using the reaction chamber, the method also comprises the following steps: placing a slide glass of which the surface is provided with an organic membrane layer into the reaction chamber; introducing ionized fluorocarbon gas into the reaction chamber, wherein the ratio of fluorine to carbon in the fluorocarbon gas is less than or equal to 2 to 1; and shifting the slide glass out of the reaction chamber. The method can reduce the generation of arc discharge phenomenon.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of plasma reaction chamber pretreatment method.
Background technology
Plasma body is a kind of neutrality, high-energy and Ionized gas, in a limited process cavity, utilizes tetanic stream or ac magnetic field or all can cause the ionization of gas atom with some electron source bombarding gas atom.Current, in the manufacture of semiconductor,, and be widely used in each step that unicircuit is made because plasma body can provide the gas reaction that occurs in silicon chip surface required most of energy.For example, in high-density plasma chemical vapor deposition (HDPCVD), in the heat energy field with plasma ionization and excite a gas source to come deposition film; In addition, the Another application of plasma body is optionally to remove the part of metal or thin-film material by plasma etching.
Yet in the actual production, as shown in Figure 1, through often there being a certain amount of electric shock damage (showing the zone as the figure centre circle) on the silicon chip of Cement Composite Treated by Plasma, described electric shock damage is formed at the performance of the device on the described silicon chip with influence, and and then influences production capacity.
Current, industry is summed up as the reason that described electric shock damage produces usually, and described electric shock damage is because the arc discharge phenomenon of following in the plasma treatment procedure is brought.Therefore, the generation that how to reduce described arc discharge phenomenon becomes those skilled in the art's problem demanding prompt solution.
The notification number of on March 3rd, 2004 bulletin is for providing a kind of plasma processing apparatus and having carried out the method for Cement Composite Treated by Plasma with this device in the Chinese patent of " CN1141009C ", this device comprises at least one pair of electrode, a gas supply unit and a power pack; In above-mentioned electrode, have at least an electrode to have dielectric layer at its outside surface.By making at least one electrode have the curved surface that puts in to discharging gap, to reduce the generation of arc discharge phenomenon.
But, when using the generation of said apparatus and method minimizing arc discharge phenomenon, needing improve or introduce new installation to existing installation, cost drops into huge.
Summary of the invention
The invention provides a kind of plasma reaction chamber pretreatment method, can reduce the generation of described arc discharge phenomenon.
A kind of plasma reaction chamber pretreatment method provided by the invention utilizes described reaction chamber to before the introducing substrate execution processing operation wherein, also comprises:
The slide glass that the surface is had organic film places described reaction chamber;
Feed Ionized fluorocarbon gas in described reaction chamber, the fluorine carbon ratio example of described fluorocarbon gas is less than or equal to 2: 1;
Described slide glass is shifted out described reaction chamber.
Alternatively, before feeding Ionized fluorocarbon gas, wetting described surface has the slide glass of organic film; Alternatively, described organic film comprises a kind of in photoresist material, polyimide or the organic antireflection layer at least; Alternatively, the material of described slide glass comprises a kind of in silicon, synthetic resins, toughened glass or the plastics at least; Alternatively, described reaction chamber comprises metallic plasma etching reaction chamber, metallochemistry vapor deposition reaction chamber and/or physical vapour deposition reaction chamber; Alternatively, described fluorocarbon gas comprises C at least
4F
6Or C
4F
8In a kind of; Alternatively, described slide glass is shifted out before the described reaction chamber, also comprise, in described reaction chamber, feed Ar, N
2And/or the step of He.
Compared with prior art, technique scheme has the following advantages:
The plasma reaction chamber pretreatment method that technique scheme provides, by utilizing described reaction chamber to before introducing substrate execution processing operation wherein, the slide glass that the surface is had organic film places described reaction chamber, to utilize described organic film as C, H source; Then, be less than or equal to 2: 1 fluorocarbon gas in conjunction with the Ionized fluorine carbon ratio example that feeds, can on described reaction chamber inwall, form and preset rete, the described rete that presets can cover the residue that is attached to described reaction chamber inwall, can reduce coming off of described residue, and and then reduce the intrabasement arc discharge phenomenon that sparks and cause that coming off of described residue causes, and need not existing installation is improved or introduce new installation;
The optional mode of the plasma reaction chamber pretreatment method that technique scheme provides, by before feeding Ionized fluorocarbon gas, wetting described surface has the slide glass of organic film, can replenish H content, is beneficial to C, H and fluorine and fully reacts to form and preset rete;
The optional mode of the plasma reaction chamber pretreatment method that technique scheme provides by before described slide glass is shifted out described reaction chamber, feeds Ar, N in described reaction chamber
2And/or He, can strengthen the homogeneity of the Ionized fluorocarbon gas of feeding, be beneficial to formation and preset rete uniformly.
Description of drawings
Fig. 1 is the sample picture that electric shock is damaged on the silicon chip in the prior art;
Fig. 2 is the sample picture of the polymkeric substance splitting of the existence of the explanation embodiment of the invention;
Fig. 3 is the schematic flow sheet of the pretreatment reaction chamber of the explanation embodiment of the invention;
Fig. 4 is the detection of particulates result schematic diagram of the explanation embodiment of the invention;
Fig. 5 is the structural representation of the pretreated reaction chamber of process of the explanation embodiment of the invention.
Embodiment
Although below with reference to accompanying drawings the present invention is described in more detail, wherein represented the preferred embodiments of the present invention, be to be understood that those skilled in the art can revise the present invention described here and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensive instruction for those skilled in the art, and not as limitation of the present invention.
For clear, whole features of practical embodiments are not described.In the following description, be not described in detail known function and structure, because they can make the present invention because unnecessary details and confusion.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details, for example, change into another embodiment by an embodiment according to relevant system or relevant commercial restriction to realize developer's specific objective.In addition, will be understood that this development may be complicated and time-consuming, but only be routine work to those skilled in the art.
In the following passage, with way of example the present invention is described more specifically with reference to accompanying drawing.Will be clearer according to following explanation and claims advantages and features of the invention.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
Because, in the actual production, through behind the plasma treatment procedure, the electric shock damage that on silicon chip, often exists a certain amount of arc discharge phenomenon to cause, described electric shock damage is formed at the performance of the device on the described silicon chip with influence, and and then influences production capacity.The generation that how to reduce described arc discharge phenomenon becomes the subject matter that the present invention solves.
The present inventor is from the former because basic point of the generation of analyzing described arc discharge phenomenon, by the related process that produces described arc discharge phenomenon is improved, and fundamentally reduces the generation of described arc discharge phenomenon.
The present inventor thinks after analyzing, the reason that produces described arc discharge phenomenon is: usually, after use after a while, on plasma reaction chamber wall (chamber liner), can form certain thickness polymkeric substance (polymer), degree of adhesion between described polymkeric substance and plasma reaction chamber wall is relatively poor, in follow-up plasma treatment procedure, very easily form polymkeric substance splitting (polymer peeling) (showing the zone) as shown in Figure 2 as the figure centre circle, the polymkeric substance of splitting will drop on the silicon chip of operation, owing to formed certain metal interconnect structure on the silicon chip of described operation usually, and, on the silicon chip that moves described in the plasma treatment procedure before, gathered certain electric charge, therefore, drop the splitting on the silicon chip of described operation polymkeric substance (especially, when carrying out described Cement Composite Treated by Plasma, the polymkeric substance that forms when relating to metal ion in the reaction chamber) will cause the moment of above-mentioned electric charge to distribute again, promptly, to cause the generation of immediate current, described immediate current causes the generation of described arc discharge phenomenon, then, cause above-mentioned electric shock damage.
Therefore, the present inventor thinks after analyzing, and reduces the direction of the generation that becomes the arc discharge phenomenon that reduces described immediate current and cause thus of described polymkeric substance splitting phenomenon.
Thus, the present inventor provides a kind of plasma reaction chamber pretreatment method, by utilizing described plasma reaction chamber to before introducing substrate execution processing operation wherein, on described reaction chamber inwall, form and preset rete, described preset rete can cover the size that is attached to described reaction chamber inwall big (as, more than or equal to 3 microns) polymkeric substance, reducing the generation of described polymkeric substance splitting phenomenon, and and then reduce the intrabasement arc discharge phenomenon that sparks and cause that described polymkeric substance splitting causes.
As shown in Figure 3, utilize described plasma reaction chamber to before the introducing substrate execution processing operation wherein, the concrete steps of the described plasma reaction chamber of pre-treatment comprise:
Step 31: the slide glass that the surface is had organic film places described reaction chamber.
Described organic film comprises a kind of in photoresist material (including but not limited to ArF photoresist material or KrF photoresist material), polyimide (PI) or the organic antireflection layer (BARC) at least.
Described slide glass comprise the sky sheet or be in arbitrary processing procedure in the semiconductor technology at goods; The material of described slide glass comprises a kind of in silicon, synthetic resins, toughened glass or the plastics at least.
The method that forms organic film on described slide glass can adopt spin coating proceeding.
Described reaction chamber comprises metallic plasma etching reaction chamber, metallochemistry vapor deposition reaction chamber and/or physical vapour deposition reaction chamber.Particularly, as example, as in order to etching A1 forming the etching reaction chamber of weld pad (pad), and, in order to deposition tungsten to form the vapor deposition reaction chamber of metal connecting line (tungsten plug).
Described have the slide glass of organic film in order to provide or to replenish C, the H source of presetting rete that form.
Step 32: feed Ionized fluorocarbon gas in described reaction chamber, the fluorine carbon ratio example of described fluorocarbon gas is less than or equal to 2: 1.
Feed described fluorocarbon gas in order to C, the F source of presetting rete that form to be provided.That is, the described rete that presets is made of C, H, F element, and the described rete that presets can be formed on the described reaction chamber inwall densely, can cover the larger-size polymkeric substance that is attached to described reaction chamber inwall, to reduce the generation of described polymkeric substance splitting phenomenon.
As embodiments of the invention, described fluorocarbon gas can be C
4F
6, concrete processing condition can comprise: radio frequency power is 2000W; Pressure in reaction chamber is 150mT; C
4F
6Flow be 50sccm; In addition, for improving the homogeneity of described reaction chamber indoor gas, be beneficial to reaction and carry out equably, also can comprise Ar in the described reaction chamber, when comprising Ar in the described reaction chamber, the flow range of Ar is 300sccm.
It should be noted that described fluorocarbon gas can comprise C at least
4F
6Or C
4F
8In a kind of.Promptly, the foregoing description only is a preferred version, consider, in the practice, because the existence of factors such as unit type difference, running status difference, cause the state of the polymkeric substance that different reaction chamber inwalls forms different, those skilled in the art can be under the instruction of above-mentioned preferred embodiment, the processing condition of this programme are carried out in expansion, and as example, described fluorocarbon gas comprises C
4F
6During with Ar, concrete processing condition can comprise: the radio frequency power scope is 1500W～3000W, as 2500W; The pressure in reaction chamber scope is 100mT～200mT, as 150mT; C
4F
6Flow range 35～70sccm, as 40sccm or 60sccm; Flow range 250～400sccm of Ar is as 350sccm.
Be the improve effect of checking technique scheme to the arc discharge phenomenon occurrence frequency that reduces described polymkeric substance splitting phenomenon occurrence frequency and cause thus, the present inventor has carried out campaign:
Test one, at one time, use conventional art respectively Cement Composite Treated by Plasma is carried out in substrate, and again Cement Composite Treated by Plasma is carried out in substrate after using technique scheme pre-treatment plasma reaction chamber, and described substrate carried out detection of particulates, indicate as boxed area among Fig. 4, behind the comparison and detection result, as seen, behind the pre-treatment plasma reaction chamber, after carrying out Cement Composite Treated by Plasma, the particle defects of described substrate surface is reduced to 0～10/sheet by 60～80/sheet, and particle number reduces greatly.
Test two, use conventional art respectively Cement Composite Treated by Plasma is carried out in substrate, and again Cement Composite Treated by Plasma is carried out in substrate after using technique scheme pre-treatment plasma reaction chamber, and monitor the Clean after every of described plasma reaction chamber, as can be known, behind the pre-treatment plasma reaction chamber, after carrying out Cement Composite Treated by Plasma, the Clean after every of described plasma reaction chamber can increase to 100 hours by 30 hours, that is, before carrying out Cement Composite Treated by Plasma, the pre-treatment plasma reaction chamber, can prolong the Clean after every of described plasma reaction chamber, be beneficial to and enhance productivity.
In addition, as optional mode, before feeding Ionized fluorocarbon gas, wetting described surface has the slide glass of organic film.By before feeding Ionized fluorocarbon gas, wetting described surface has the slide glass of organic film, can replenish H content, is beneficial to C, H and fluorine and fully reacts to form and preset rete.
Step 33: described slide glass is shifted out described reaction chamber.
Described slide glass is shifted out before the described reaction chamber, also comprise, in described reaction chamber, feed Ar, N
2And/or the step of He.By before described slide glass is shifted out described reaction chamber, in described reaction chamber, feed Ar, N
2And/or He, can strengthen the homogeneity of the Ionized fluorocarbon gas of feeding, be beneficial to formation and preset rete uniformly.As shown in Figure 5, behind the described plasma reaction chamber 20 of pre-treatment (described reaction chamber 20 is in order to carry out Cement Composite Treated by Plasma to the substrate 10 that is positioned at wherein), on described reaction chamber 20 inwalls, has the rete of presetting 30.
By utilizing described reaction chamber to before introducing substrate execution processing operation wherein, the slide glass that the surface is had organic film places described reaction chamber, to utilize described organic film as C, H source; Then, be less than or equal to 2: 1 fluorocarbon gas in conjunction with the Ionized fluorine carbon ratio example that feeds, can on described reaction chamber inwall, form and preset rete, the described rete that presets can cover the residue that is attached to described reaction chamber inwall, can reduce coming off of described residue, and and then reduce the intrabasement arc discharge phenomenon that sparks and cause that coming off of described residue causes.
What need emphasize is that not elsewhere specified step all can use conventional methods acquisition, and concrete processing parameter is determined according to product requirement and processing condition.
Although the present invention has been described and has enough described embodiment in detail although describe by the embodiment at this, the applicant does not wish by any way the scope of claims is limited on this details.Other to those skilled in the art advantage and improvement are conspicuous.Therefore, relative broad range the invention is not restricted to represent and the specific detail of describing, equipment and the method and the illustrative example of expression.Therefore, can depart from these details and do not break away from the spirit and scope of the total inventive concept of applicant.
Claims (7)
1. a plasma reaction chamber pretreatment method is characterized in that, utilizes described reaction chamber to before the introducing substrate execution processing operation wherein, also comprises:
The slide glass that the surface is had organic film places described reaction chamber;
Feed Ionized fluorocarbon gas in described reaction chamber, the fluorine carbon ratio example of described fluorocarbon gas is less than or equal to 2: 1;
Described slide glass is shifted out described reaction chamber.
2. plasma reaction chamber pretreatment method according to claim 1 is characterized in that: before feeding Ionized fluorocarbon gas, wetting described surface has the slide glass of organic film.
3. plasma reaction chamber pretreatment method according to claim 1 is characterized in that: described organic film comprises a kind of in photoresist material, polyimide or the organic antireflection layer at least.
4. plasma reaction chamber pretreatment method according to claim 1 is characterized in that: the material of described slide glass comprises a kind of in silicon, synthetic resins, toughened glass or the plastics at least.
5. plasma reaction chamber pretreatment method according to claim 1 is characterized in that: described reaction chamber comprises metallic plasma etching reaction chamber, metallochemistry vapor deposition reaction chamber and/or physical vapour deposition reaction chamber.
6. plasma reaction chamber pretreatment method according to claim 1 is characterized in that: described fluorocarbon gas comprises C at least
4F
6Or C
4F
8In a kind of.
7. plasma reaction chamber pretreatment method according to claim 1 is characterized in that: described slide glass is shifted out before the described reaction chamber, also comprise, feed Ar, N in described reaction chamber
2And/or the step of He.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101177249A CN101643895B (en) | 2008-08-04 | 2008-08-04 | Plasma reaction chamber pretreatment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101177249A CN101643895B (en) | 2008-08-04 | 2008-08-04 | Plasma reaction chamber pretreatment method |
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| Publication Number | Publication Date |
|---|---|
| CN101643895A true CN101643895A (en) | 2010-02-10 |
| CN101643895B CN101643895B (en) | 2011-03-23 |
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|---|---|---|---|
| CN2008101177249A Expired - Fee Related CN101643895B (en) | 2008-08-04 | 2008-08-04 | Plasma reaction chamber pretreatment method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103290355A (en) * | 2012-02-14 | 2013-09-11 | 金文焕 | Method for cleaning reaction chamber cavity part by physical vapor deposition |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6208075B1 (en) * | 1998-11-05 | 2001-03-27 | Eastman Kodak Company | Conductive fluorocarbon polymer and method of making same |
| US6805952B2 (en) * | 2000-12-29 | 2004-10-19 | Lam Research Corporation | Low contamination plasma chamber components and methods for making the same |
| US20050016684A1 (en) * | 2003-07-25 | 2005-01-27 | Applied Materials, Inc. | Process kit for erosion resistance enhancement |
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2008
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103290355A (en) * | 2012-02-14 | 2013-09-11 | 金文焕 | Method for cleaning reaction chamber cavity part by physical vapor deposition |
| CN103290355B (en) * | 2012-02-14 | 2016-03-02 | 金文焕 | Method for cleaning reaction chamber cavity part by physical vapor deposition |
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| CN101643895B (en) | 2011-03-23 |
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Granted publication date: 20110323 Termination date: 20190804 |