CN101643893A - Preparation method of stoichiometric-proportion amorphous GaAs films - Google Patents
Preparation method of stoichiometric-proportion amorphous GaAs films Download PDFInfo
- Publication number
- CN101643893A CN101643893A CN200910066822A CN200910066822A CN101643893A CN 101643893 A CN101643893 A CN 101643893A CN 200910066822 A CN200910066822 A CN 200910066822A CN 200910066822 A CN200910066822 A CN 200910066822A CN 101643893 A CN101643893 A CN 101643893A
- Authority
- CN
- China
- Prior art keywords
- morphous
- gaas
- amorphous gaas
- stoichiometric
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Large-area morphous GaAs films have been prepared by simple and cheap magnetron sputtering technology and have the semiconducting properties, but the morphous GaAs film have large quantities of structural defects introduced by the component segregation, which hinder the morphous GaAs materials to be used in photoelectronic devices. The invention aims to provide a sputtering preparation method of stoichiometric-proportion amorphous GaAs films. On the premise that the completely disordered structure of the morphous GaAs films is ensured, the method prevents the component segregation and enhancesthe photoelectronic properties and the surface topography of the morphous GaAs films so as to lay a foundation for developing shortwave infrared detectors, solar cells and other morphous photoelectronic devices.
Description
Technical field
The present invention relates to technical field of semiconductor, belong to the magnetron sputtering preparation field of semi-conductor photoelectronic type material.
Background technology
The energy gap of monocrystalline GaAs is 1.4eV, and uptake factor is very high, can be used as high efficiency solar cell.For reducing cost, propose to adopt non-crystalline state GaAs (a-GaAs) to be used for solar cell.Large-area a-GaAs is prepared by simple and cheap sputtering method, and has carried out amorphous GaAs film alternating temperature sputter experiment.1984, reports such as Alimoussa, at deposition on glass a-GaAs, the substrate top temperature is 350 ℃, and self-bias is 800V, and Ar pressure is 6.7Pa, and target-substrate distance is 30mm.When being 290 ℃, underlayer temperature obtains to meet the a-GaAs of stoichiometric ratio.Nineteen ninety-five, when employing magnetron sputterings such as Reuter prepared the amorphous GaAs film, underlayer temperature was 200 ℃, obtained the non-crystal structure film.In the same year, Jean-Luc Seguin etc. points out to utilize magnetron sputtering technique to prepare the a-GaAs film, and underlayer temperature can reach 600 ℃, as long as enough low of self-bias this moment.
Owing to exist solute segregation to introduce a large amount of textural defect in the amorphous GaAs film, hindered the amorphous GaAs material and be applied to opto-electronic device.Our invention is carried out the preparation of stoichiometric ratio amorphous GaAs film around the defective that reduces the amorphous GaAs film, and this will promote the application of amorphous GaAs on opto-electronic device.
Summary of the invention
(1) technical problem that will solve
The purpose that we invent is to provide a kind of sputter preparation method of stoichiometric ratio amorphous GaAs film, under the complete disordered structure prerequisite that guarantees the amorphous GaAs film, prevents solute segregation, improves the photoelectric properties and the surface topography of amorphous GaAs film.
(2) technical scheme
In order to reach above-mentioned target, warm sputter preparation and preparation back thermal anneal process during technical scheme of the present invention comprises specifically comprise:
A, when underlayer temperature is 280 ℃-350 ℃, adopt the magnetron sputtering technology of preparing on quartz substrate, to prepare stoichiometric ratio amorphous GaAs film;
B, in the vacuum chamber of magnetic control sputtering system, cycle annealing under 200 ℃ of conditions.
Further comprise before the described steps A:
Employing purity is the monocrystalline GaAs target more than 99.99%.Earlier target-substrate distance is fixed on 50mm, with quartz substrate acetone, ethanol ultrasonic cleaning 10min, cleans twice again with deionized water (DI), be placed in the analytical pure ethanol, dry up with nitrogen, install on the sample tray and fix, at last sample tray is put into vacuum chamber fast.
Described steps A comprises:
Substrate is heated to 280 ℃-350 ℃, when carrying on the back end vacuum tightness less than 10
-4During Pa, the quality of regulation under meter charges into argon gas, will remove impurity through gas purifier before argon gas charges into.The speed of controlling withdrawing gas by the unlatching size that changes slide valve realizes that sputter pressure is 0.25-0.5Pa, prepares sputter.
In order to remove the pollution of target material surface, pre-sputtering target material number minute.After sputtering power is stabilized in 100W, substrate is shifted out baffle plate, sputter formally begins, sputter 1 hour, thickness is about 1 μ m.
Described step B comprises:
Close radio frequency source, substrate moves overhead gage, and underlayer temperature is reduced to 200 ℃, is carrying on the back end vacuum tightness less than 10
-4Pick up counting during Pa, annealed 3 hours.
(3) beneficial effect
From according to technique scheme, the present invention has following beneficial effect:
1, utilize the present invention, prepared the GaAs film of complete non-crystal structure, the disordering degree of film is very high, and amorphous GaAs film transmission electron diffraction (TED) spectrum (TEM) proves the complete non-crystal structure of film, and Fig. 1 is the TEM of amorphous GaAs film;
2, the present invention has prepared the amorphous GaAs film that meets chemical dosage ratio, and the present invention is used, and prepared sample is carried out proximate analysis, sees that the amorphous GaAs film composition meets chemical dosage ratio, and Ga and As molar percentage are between 0.995-1.005.
3, utilize the present invention, prepare the surperficial even, smooth of amorphous GaAs film, Fig. 2 is the scanning electron microscope spectrum (SEM) of amorphous GaAs film.
4, the prepared amorphous GaAs Film Optics of the present invention band gap is between 1.26-1.4eV, and optical absorption coefficient is about 9 * 10 in ABSORPTION EDGE
4Cm
-1, a little more than crystal (～10
4Cm
-1), photosensitive is about 3.
Claims (5)
1, a kind of method for preparing stoichiometric-proportion amorphous GaAs films, warm sputter preparation and preparation back thermal anneal process in comprising.
2, stoichiometric ratio amorphous GaAs film according to claim 1 is characterized in that, as before the steps A further as described in, target-substrate distance is fixed on 50mm.
3, stoichiometric ratio amorphous GaAs film according to claim 1 is characterized in that, as described in steps A, underlayer temperature is 280-350 ℃, and operating air pressure is 0.25-0.5Pa, and sputtering power is 100W, and thickness is about 1 μ m.
4, stoichiometric ratio amorphous GaAs film according to claim 1 is characterized in that, as described in step B, annealing temperature is 200 ℃, and annealing time is 3 hours.
5, stoichiometric ratio amorphous GaAs film according to claim 1 is characterized in that, Ga and As molar percentage are at 0.995-1.05, and optical band gap is between 1.26-1.4eV, and photosensitive is about 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910066822A CN101643893A (en) | 2009-04-15 | 2009-04-15 | Preparation method of stoichiometric-proportion amorphous GaAs films |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910066822A CN101643893A (en) | 2009-04-15 | 2009-04-15 | Preparation method of stoichiometric-proportion amorphous GaAs films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101643893A true CN101643893A (en) | 2010-02-10 |
Family
ID=41655952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910066822A Pending CN101643893A (en) | 2009-04-15 | 2009-04-15 | Preparation method of stoichiometric-proportion amorphous GaAs films |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101643893A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110724921A (en) * | 2019-10-12 | 2020-01-24 | 华中科技大学 | Intermittent magnetron sputtering method for improving disorder of amorphous material |
-
2009
- 2009-04-15 CN CN200910066822A patent/CN101643893A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110724921A (en) * | 2019-10-12 | 2020-01-24 | 华中科技大学 | Intermittent magnetron sputtering method for improving disorder of amorphous material |
| CN110724921B (en) * | 2019-10-12 | 2021-04-06 | 华中科技大学 | Intermittent magnetron sputtering method for improving disorder of amorphous material |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Tanaka et al. | Fabrication of Cu2ZnSnS4 thin films by co‐evaporation | |
| Gall et al. | Polycrystalline silicon thin-film solar cells on glass | |
| Li et al. | Fabrication of Cu (In, Ga) Se2 thin films solar cell by selenization process with Se vapor | |
| Sun et al. | Flexible kesterite Cu2ZnSnS4 solar cells with sodium-doped molybdenum back contacts on stainless steel substrates | |
| CN103572234A (en) | Preparation method of gamma-In2Se3 film with (006) preferred direction | |
| CN104947050A (en) | Sulfide target cosputtering preparation method of CZTSSe film and product thereof | |
| CN105714262A (en) | Preparation method of preferred growing ITO transparent conductive film | |
| Scofield et al. | Sodium diffusion, selenization, and microstructural effects associated with various molybdenum back contact layers for CIS-based solar cells | |
| KR101734362B1 (en) | Forming method for acigs film at low temperature and manufacturing method for solar cell by using the forming method | |
| CN101643893A (en) | Preparation method of stoichiometric-proportion amorphous GaAs films | |
| Guo et al. | Influence of Na2S treatment on CZTS/Mo interface in Cu2ZnSnS4 solar cells annealed in sulfur-free atmosphere | |
| CN107230735A (en) | The preparation method of CdZnTe film photoelectric detectors with cushion | |
| KR101388458B1 (en) | Preparation method for cigs thin film using rapid thermal processing | |
| Chuan-Ming et al. | Preparation of Cu (In, Ga) Se2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere | |
| US20200312659A1 (en) | Method for the preparation of gallium oxide/copper gallium oxide heterojunction | |
| CN101591770A (en) | A kind of component is adjustable amorphous InAs xSb 1-xThe preparation method of thin-film material | |
| Kwon et al. | Improving the performance of pure sulfide Cu (InGa) S2 solar cells via injection annealing system | |
| CN103531661B (en) | A kind of CIGS thin-film preparation method of (220) orientation | |
| CN110804727A (en) | Strain thin film heterojunction, preparation method and application | |
| CN103103479A (en) | Method for preparing p-type zinc oxide film through sulfur and nitrogen co-doping | |
| Lee et al. | Oxygen-controlled seed layer in DC sputter-deposited ZnO: Al substrate for Si thin-film solar cells | |
| CN103361600B (en) | Solar cell light absorption layer preparation method | |
| JP2014043599A (en) | METHOD OF MANUFACTURING Ge CLATHRATE | |
| Chang et al. | Cu (In, Ga) Se2 Thin Films Preparation from CuGa-In Metallic Alloy and Se Thin Film by Atmosphere Pressure Plasma Depositon System | |
| CN108149206B (en) | ZnSnN 2 film and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20100210 |