CN101635297A - Integrated passive element used for electromagnetic interference shielding and electrostatic discharge protection - Google Patents
Integrated passive element used for electromagnetic interference shielding and electrostatic discharge protection Download PDFInfo
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- CN101635297A CN101635297A CN200810130777A CN200810130777A CN101635297A CN 101635297 A CN101635297 A CN 101635297A CN 200810130777 A CN200810130777 A CN 200810130777A CN 200810130777 A CN200810130777 A CN 200810130777A CN 101635297 A CN101635297 A CN 101635297A
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Abstract
The invention relates to an integrated passive element with electromagnetic interference shielding function and electrostatic discharge protection function, which comprises an electromagnetic interference shielding structure provided with at least one capacitor, an electrostatic discharge protection structure laminated on the electromagnetic interference shielding structure, a first conductive block and a second conductive block. The capacitor comprises two electrodes and a dielectric material arranged between the two electrodes. The electrostatic discharge protection structure comprises a first conductor, a second conductor and a variable resistor arranged between the first and second conductors. The first conductive block is electrically connected to one electrode of the capacitor and one conductor of the electrostatic discharge protection structure and the second conductive block is electrically connected to the other electrode of the capacitor and the other conductor of the electrostatic discharge protection structure.
Description
Technical field
The present invention relates to a kind of integrated passive element that has electromagnetic interference shield function and electro-static discharge protection function concurrently, relate to the integrated passive element of the over-current protection structure of a kind of capacitance structure that has the shield electromagnetic interference function concurrently and electro-static discharge protection function in particular.
Background technology
The operation of appliance and electronic often is accompanied by electromagnetic radiation.For example TV, broadcast receiver, computer, Medical Instruments, business machine, communication device etc. all can be emitted electromagnetic radiation from circuit itself when operation.This kind radiation meeting changes near the magnetic field the circuit, or makes near the electromagnetic spectrum the circuit that of short duration variation take place, and its influence degree can not wait from 10KHz to 10GHz.This kind electromagnetic radiation claims that again (electromagnetic interference, EMI), and electromagnetic interference has become a kind of currently known interference source to electromagnetic interference.
Electromagnetic interference shield (shielding) can be used to slow down electromagnetic interference.Because electromagnetic interference shield can absorb and/or reflect electromagnetic energy, therefore can be used to control the radiation that local circuit produces, also can be used to the electromagnetic interference that isolated other circuit is produced.In general, electromagnetic interference shield is arranged between local circuit and other circuit mostly, and it is made up of electric conducting material and surrounds local circuit and be coupled to earthing potential.
In addition, integrated circuit is to produce output signal accordingly according to external voltage and input signal, more in addition some input pin be directly connected to transistorized grid, so the input pin of integrated circuit is quite responsive to change in voltage mostly.When manual operation or in automated manufacturing, production, assembling, test, deposit or carry in the way during integrated circuit generation static discharge, its inner electronic building brick may suffer the destruction that can not expect.For instance, the people knows from experience the accumulation electrostatic charge, and produces the loop when touching integrated circuit, makes the electrostatic charge integrated circuit of flowing through.Automation assembling instrument or testing equipment also can accumulate electrostatic charge and when touching integrated circuit to its static discharge.Especially for the more little circuit of coiling size in the integrated circuit, can not ignore the influence of static discharge.Known electrostatic discharge protective mode is to utilize resistance to draw away the big electric current that static discharge produces, and then restriction flows into the input current size of inner primary clustering.
Summary of the invention
According to described purpose, the present invention proposes a kind of integrated passive element, and it has the capacitance structure of shield electromagnetic interference and the over-current protection structure of electrostatic discharge protective concurrently.
The embodiment of integrated passive element of the present invention comprises electromagnetic interference shielding structure, layer with at least one electric capacity and is located at electrostatic discharge protection structure, first conductive area and second conductive area on the described electromagnetic interference shielding structure.Described electric capacity has two electrodes and the dielectric material between described two electrodes.Described electro-static discharge structure comprises first conductor, second conductor and the variable resistor between described first conductor and described second conductor.Described first conductive area is electrically connected the electrode of described electric capacity and the conductor of described electrostatic discharge protection structure, and described second conductive area is electrically connected another electrode of described electric capacity and another conductor of described electrostatic discharge protection structure.
Description of drawings
Fig. 1 is to the preparation flow of the integrated passive element of Fig. 4 illustration embodiments of the invention; And
Fig. 5 is to the preparation flow of the integrated passive element of Fig. 8 illustration another embodiment of the present invention.
Embodiment
Fig. 1 is to the preparation flow of the integrated passive element 10 of Fig. 4 illustration embodiments of the invention.At first, preparation electrostatic discharge protection structure 20 and electromagnetic interference shielding structure 30, wherein electromagnetic interference shielding structure 30 can comprise electric capacity 40.Electrostatic discharge protection structure 20 can be an over-current protection structure, and is located on the electromagnetic interference shielding structure 30 by adhesive agent 52 or preimpregnation material layer with glass fibre.
Electrostatic discharge protection structure 20 comprises core substrate 22, be arranged at first conductor 24 of a side of core substrate 22 and second conductor that is arranged at the opposite side of core substrate 22, and first conductor 24 and second conductors 26 are separated in gap 28.The composition of first conductor 24 and second conductor 26 can comprise at least one in the group that is made up of aluminium, silver, palladium, platinum, gold, nickel, copper, tungsten, chromium, iron, zinc, titanium, niobium, molybdenum, ruthenium, lead and iridium.The composition of core substrate 22 can be glass epoxy resin (glass epoxy resin), FR4 resin (FR4resin), FR5 resin (FR5resin) or bismaleimides-cyanate resin (Bismaleimide-Triazine resin, BT resin).
The electric capacity 40 of electromagnetic interference shielding structure 30 comprises first electrode 42, second electrode 44 and the dielectric material 46 between first electrode 42 and second electrode 44.The composition of first electrode 42 and second electrode 44 can comprise at least one in the group that is made up of aluminium, silver, palladium, platinum, gold, nickel, copper, tungsten, chromium, iron, zinc, titanium, niobium, molybdenum, ruthenium, lead and iridium.The composition of dielectric material 46 can be polymer, as poly-difluoroethylene (polyvinyl difluoride, or title Teflon), epoxy resin (epoxy), poly-(3, the 4-Ethylenedioxy Thiophene) (poly (3,4-ethylenedioxythiophene)), polyester (polyster, or title Mylar), polyaniline (polyaniline), polypyrrole (polypyrrole), polyvinylidene fluoride (polyvinylidene fluoride, PVDF), polytetrafluoroethylene (polytetrafluoroethylene, PTFE) or polyethylene (polyethylene, PE).In addition, the composition of dielectric material 46 can also be a ceramic material.
With reference to figure 2, form insulating material 54, again electric capacity 40 is placed the surface of insulating material 54, form conductive layer another surface again in insulating material 54.Afterwards, carry out etching process and remove after the described conductive layer, form first connection pad 56 and second connection pad 58 on another surface of insulating material 54 with the part.The composition of first connection pad 54 and second connection pad 56 can comprise at least one in the group that aluminium, silver, palladium, platinum, gold, nickel, copper, tungsten, chromium, iron, zinc, titanium, niobium, molybdenum, ruthenium, lead and iridium forms.
With reference to figure 3, form first conductive area 62, it is electrically connected first electrode 42 of electric capacity 40, first conductor 24 and first connection pad 56 of electrostatic discharge protection structure 20.In addition, form second conductive area 64, it is electrically connected second electrode 44 of electric capacity 40, second conductor 26 and second connection pad 58 of electrostatic discharge protection structure 20.The composition of first conductor 62 and second conductor 64 can comprise at least one in the group that aluminium, silver, palladium, platinum, gold, nickel, copper, tungsten, chromium, iron, zinc, titanium, niobium, molybdenum, ruthenium, lead and iridium forms.
Afterwards, form variable resistor 60 between first conductor 24 and second conductor 26, and fill gap 28.The composition of variable resistor 60 can be one in the inorganic material group that zinc oxide, bismuth oxide, cobalt oxide, manganese dioxide and tellurium oxide form.The equivalent electric circuit of integrated passive element 10 can be considered electrostatic discharge protection structure 20 and electromagnetic interference shielding structure 30 is electrically connected in parallel, as shown in Figure 4.
Fig. 5 to the integrated passive element 10 of Fig. 8 illustration another embodiment of the present invention ' preparation flow.The electromagnetic interference shielding structure 30 of comparing Fig. 3 comprises electric capacity 40, the integrated passive element 10 of Fig. 5 ' electromagnetic interference shielding structure 30 ' comprise 3 electric capacity 40A, 40B and 40C.In particular, electric capacity 40A, 40B can be stacked on the electric capacity 40C by adhesive agent 48.
Fig. 8 illustration integrated passive element 10 ' equivalent electric circuit, it can be considered electrostatic discharge protection structure 20 and electromagnetic interference shielding structure 30 ' be electrically connected in parallel, wherein electric capacity 40A, 40B and 40C are electrically connected with parallel way.In the present embodiment, integrated passive element 10 ' can change its capacitance characteristic by adjusting electric capacity quantity.Therefore, can differently according to the frequency of electromagnetic signal to be filtered select different capacitances for use, and then increase the use flexibility.
Technology contents of the present invention and technical characterstic disclose as above, yet the those skilled in the art still may be based on teaching of the present invention and announcement and done all replacement and modifications that does not deviate from spirit of the present invention.Therefore, protection scope of the present invention should be not limited to the scope that embodiment discloses, and should comprise various do not deviate from replacement of the present invention and modifications, and is contained by following claims.
Claims (18)
1, a kind of integrated passive element is characterized in that comprising:
Electromagnetic interference shielding structure comprises at least one electric capacity, and it has first electrode, second electrode and the dielectric material between described first electrode and described second electrode;
Electrostatic discharge protection structure, layer is located at described electromagnetic interference shielding structure, comprises first conductor, second conductor and the variable resistor between described first conductor and described second conductor;
First conductive area, it is electrically connected described first electrode and described first conductor; And
Second conductive area, it is electrically connected described second electrode and described second conductor.
2, integrated passive element as claimed in claim 1 is characterized in that described electromagnetic interference shielding structure comprises a plurality of electric capacity, is parallel to described first conductive area and described second conductive area.
3, integrated passive element as claimed in claim 1 is characterized in that described first electrode and described second electrode are selected from aluminium, silver, palladium, platinum, gold, nickel, copper, tungsten, chromium, iron, zinc, titanium, niobium, molybdenum, ruthenium, lead and iridium and form one in the group.
4, integrated passive element as claimed in claim 1 is characterized in that described dielectric material comprises polymer or ceramic material.
5, integrated passive element as claimed in claim 1, it is characterized in that described dielectric material comprises poly-difluoroethylene (Teflon), epoxy resin, poly-(3, the 4-Ethylenedioxy Thiophene), polyester, polytetrafluoroethylene, polypyrrole, poly-difluoroethylene, polyvinylidene fluoride or polyethylene.
6, integrated passive element as claimed in claim 1 is characterized in that described first conductor and described second conductor are selected from one in the group that aluminium, silver, palladium, platinum, gold, nickel, copper, tungsten, chromium, iron, zinc, titanium, niobium, molybdenum, ruthenium, lead and iridium forms.
7, integrated passive element as claimed in claim 1 is characterized in that described variable resistor comprises inorganic material.
8, integrated passive element as claimed in claim 1 is characterized in that described variable resistor is selected from one in the inorganic material group that zinc oxide, bismuth oxide, cobalt oxide, manganese dioxide and tellurium oxide form.
9, integrated passive element as claimed in claim 1 is characterized in that more comprising preimpregnation material, and described electric capacity places on the described preimpregnation material.
10, integrated passive element as claimed in claim 9 is characterized in that described preimpregnation material comprises glass fibre.
11, integrated passive element as claimed in claim 1 is characterized in that described electrostatic discharge protection structure comprises:
Core substrate, described first conductor places a side of described core substrate, and described second conductor places the opposite side of described core substrate, and described first conductor of separated and described second conductor; And
Inorganic material, it fills described gap to form described variable resistor.
12, integrated passive element as claimed in claim 11 is characterized in that described core substrate comprises glass epoxy resin, FR4 resin, FR5 resin or bismaleimides-cyanate resin.
13, integrated passive element as claimed in claim 1 is characterized in that described electrostatic discharge protection structure is located at described electromagnetic interference shielding structure by the preimpregnation material layer with glass fibre.
14, integrated passive element as claimed in claim 1 is characterized in that described electrostatic discharge protection structure is located at described electromagnetic interference shielding structure by adhesive layer.
15, integrated passive element as claimed in claim 1 is characterized in that more comprising insulating material, and described electric capacity places the surface of described insulating material.
16, integrated passive element as claimed in claim 15 is characterized in that more comprising first connection pad and second connection pad, places another surface of described insulating material.
17, integrated passive element as claimed in claim 16, it is characterized in that described first conductive area is electrically connected with described first electrode and described first conductor by described first connection pad, and described second conductive area is electrically connected with described second electrode and described second conductor by described second connection pad.
18, integrated passive element as claimed in claim 16 is characterized in that described first connection pad and described second connection pad are selected from one in the group that aluminium, silver, palladium, platinum, gold, nickel, copper, tungsten, chromium, iron, zinc, titanium, niobium, molybdenum, ruthenium, lead and iridium forms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810130777A CN101635297A (en) | 2008-07-21 | 2008-07-21 | Integrated passive element used for electromagnetic interference shielding and electrostatic discharge protection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810130777A CN101635297A (en) | 2008-07-21 | 2008-07-21 | Integrated passive element used for electromagnetic interference shielding and electrostatic discharge protection |
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| Publication Number | Publication Date |
|---|---|
| CN101635297A true CN101635297A (en) | 2010-01-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200810130777A Pending CN101635297A (en) | 2008-07-21 | 2008-07-21 | Integrated passive element used for electromagnetic interference shielding and electrostatic discharge protection |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105719831A (en) * | 2015-04-22 | 2016-06-29 | 周景振 | Integration construction type dielectric plane type high energy resonant capacitor |
| CN105895648A (en) * | 2015-02-17 | 2016-08-24 | 台湾积体电路制造股份有限公司 | Integrated circuit and image sensing device having metal shielding layer and related fabricating method |
| CN106773196A (en) * | 2017-04-06 | 2017-05-31 | 深圳天珑无线科技有限公司 | Electrostatic protection structure and terminal |
-
2008
- 2008-07-21 CN CN200810130777A patent/CN101635297A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895648A (en) * | 2015-02-17 | 2016-08-24 | 台湾积体电路制造股份有限公司 | Integrated circuit and image sensing device having metal shielding layer and related fabricating method |
| CN105719831A (en) * | 2015-04-22 | 2016-06-29 | 周景振 | Integration construction type dielectric plane type high energy resonant capacitor |
| CN106773196A (en) * | 2017-04-06 | 2017-05-31 | 深圳天珑无线科技有限公司 | Electrostatic protection structure and terminal |
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Open date: 20100127 |