CN101634918A - Conducting film integrated structure - Google Patents
Conducting film integrated structure Download PDFInfo
- Publication number
- CN101634918A CN101634918A CN200810134059A CN200810134059A CN101634918A CN 101634918 A CN101634918 A CN 101634918A CN 200810134059 A CN200810134059 A CN 200810134059A CN 200810134059 A CN200810134059 A CN 200810134059A CN 101634918 A CN101634918 A CN 101634918A
- Authority
- CN
- China
- Prior art keywords
- oxide
- layer
- base material
- nesa coating
- conducting film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Laminated Bodies (AREA)
Abstract
The invention provides a conducting film integrated structure, which comprises a base material, an anti-glare layer, an anti-Newton ring layer, a hard layer and a transparent conducting film. The anti-glare layer and the anti-Newton ring layer are arranged on the two opposite sides of the base material respectively; and the hard layer and the transparent conducting film are arranged on the anti-glare layer and the anti-Newton ring layer respectively. The conducting film integrated structure provided by the invention has the advantages of high conductivity, wide wavelength range and high visible light transmission, can prevent the Newton ring phenomenon and has an uneasily damaged structure and a stable environment.
Description
Technical field
The present invention refers to a kind of plane touch control display apparatus that is applied to especially about a kind of conducting film integrated structure, high conductivity, broad wavelength coverage being provided, having the high visible penetrance, and prevents the conducting film integrated structure of Newton ring effect.
Background technology
The communication interface of past people and computing machine or machine is mainly based on keyboard and mouse, along with the more friendly man-machine interface of sci-tech product trend, allow the user can be more convenient, the operation of intuitive, also because IT and the flourish drive information of CE industry and the rise of consumer products, expect that following user is ardent for the ease of Use interface requirements, the touch interface that is applied to electronic installation will influence the product design trend.Wherein, the device of this touch interface includes: LCD (LCD), contact panel (TP) and hand input device, electroluminescent lamp (EL), PDA(Personal Digital Assistant), organic light emitting apparatus (OLED) etc.
Display contact panels such as known liquid crystal indicator are made up of two electrode base boards, and electrode base board comprises: glass plate, resin plate, thermoplasticity polymeric membrane and conductive layer.General nesa coating is that (wavelength (λ) approximates 380～780nm) light transmission high and its conductance height, the i.e. average percent of pass T of visible light at visible light
Avg＞80%, resistivity is 10
-3The following film of Ω cm just can become nesa coating; Wherein, the transparent big (E of energy gap width that means material
g＞3eV) and free electron is few.On the other hand, the high material of conductance often electronics is many and opaque, has only the material that can satisfy these two kinds of conditions simultaneously just may be in order to the preparation nesa coating.Transparent conductive film mainly contains metal film system, transparent conductive oxide film system, polymeric membrane system, compound film system and other compound film system etc. at present.Wherein, the condition person that can satisfy above-mentioned visible light transmission and resistivity is metallic film and sull.Because the light percent of pass of metal nesa coating and the highly significant that influences that resistivity is subjected to thickness, but when thickness surpasses certain limit, the rapid decline of light percent of pass meeting, then there is not the thickness limits that is similar to metal in the oxidic transparent conducting film.Transparent conductive oxide film (transparent conductive oxide, be called for short TCO), the oxide and the composite multi-component oxide film material thereof that mainly comprise In, Sb, Zn and Cd, that research is more at present is ITO, ATO and AZO, and ITO has characteristics such as low resistance, high visible rate, is widely used in the flat-panel display device.
Yet known contact panel is to utilize sept to separate two relative ITO conducting films; Push its when surface when finger or nib, two ITO conducting films can contact with each other and produce the function of signal input.Yet behind this conducting film several of continued operation, the ITO surface has situations such as be full of cracks or fragmentation and takes place in the place of touching.
In addition, tradition is in fields such as optical facilities, because member driving fits each other such as plastic sheeting, glass plate make interconnective surface produce the factor of optical interference, and then produce so-called Newton ring (Anti-Newtonring, ANR) problem of effect.When each member each other during driving fit,, can prevent the generation of Newton ring effect by keeping the gap that produces between the two more than certain.For example: Japanese kokai publication hei 10-323931 communique discloses a kind of nesa coating, has the coat of a thickness 1～3 μ m between transparent plastic and transparent conductive film, and contains 500～3000 of average densities/(mm)
2Mean grain size be the atomic nesa coating of 1～4 μ m, can suppress the generation of Newton ring effect.
Improving of the above-mentioned disappearance of inventor's thoughts, according to the correlation experience of being engaged in for many years in this respect, the concentrated observation and research cooperates the scientific principle utilization, proposes a kind of reasonable in design and improve the present invention of above-mentioned disappearance.
Summary of the invention
Fundamental purpose of the present invention is, a kind of high conductivity is provided and in the wavelength coverage of broadness, still has the high visible penetrance, and prevent that Newton ring (Anti-Newton ring) effect from taking place, with satisfied permanance and anti-dazzle characteristic of writing input, and conducting film integrated structure not fragile and that stability in use is good; Use by this conducting film integrated structure, under the optical property that does not influence the ITO conducting film, form the ITO structure the more firm result of use that is fit to multiple electronic installation can be provided, when being exposed under high temperature and the wet environment, also have bigger environmental stability.
Another object of the present invention is to, only hybrid fine particles in the Newton's ring-resisting layer can be avoided the generation of Newton ring effect, omits the concave-convex type shape and the design of utmost point labyrinth on Newton's ring-resisting surface, and avoids damaging its joint face.
In order to achieve the above object, the invention provides a kind of conducting film integrated structure, it comprises: a base material, a Bewildering resistance layer (Anti-Glare Layer), a Newton's ring-resisting layer (Anti-Newton ring Layer), a hard layer and a nesa coating.Base material is a transparent resin; Bewildering resistance layer is located at base material one side; The Newton's ring-resisting layer is in the substrate opposite side, and the Newton's ring-resisting layer is made up of a resin and a most particulate; Hard layer is located on the Bewildering resistance layer; Nesa coating is located on the Newton's ring-resisting layer, and the thickness of nesa coating between 38 nanometers (nm) between 188 nanometers (nm).
In order to achieve the above object, the present invention provides a kind of conducting film integrated structure in addition, and it comprises: a base material, a Bewildering resistance layer, a hard layer, an adhesion layer, a Newton's ring-resisting layer, one second base material and a nesa coating.This base material is a transparent resin; This Bewildering resistance layer (Anti-Glare Layer) is located at this base material one side; This hard layer is located on this Bewildering resistance layer; This adhesion layer is located on the opposite side of this base material; This Newton's ring-resisting layer is located on this adhesion layer; This second base material is located on this Newton's ring-resisting layer; This nesa coating is located on this second base material.
In order to achieve the above object, the present invention provides a kind of conducting film integrated structure again, and it comprises: a base material, a Bewildering resistance layer, a hard layer, an adhesion layer, a nesa coating, a metal level and a less important nesa coating.This base material is a transparent resin; It is located at this base material one side this Bewildering resistance layer; This hard layer is located on this Bewildering resistance layer; This adhesion layer is covering on the opposite side of this base material; This nesa coating is located on this adhesion layer; This metal level is located on this nesa coating; This less important nesa coating is located on this metal level.
In sum, conducting film integrated structure of the present invention has following beneficial effect:
(1), under the optical property that does not influence conductive film, the structure of utilizing conducting film integrated structure to form provides the more firm result of use that is fit to multiple electronic installation, when being exposed under high temperature and the wet environment, also has bigger environmental stability.
(2), provide and have high conductivity, broad wavelength coverage, tool high visible penetrance, prevent the generation of Newton ring effect, and structure is not fragile and stability in use is good.
(3), pass through the setting of a Newton's ring-resisting layer, except avoiding the generation of Newton ring effect, satisfy outside the characteristic of the permanance write input and anti-dazzle, further, by in the Newton's ring-resisting layer, mixing most particulates, effectively omit Newton's ring-resisting laminar surface concaveconvex shape and utmost point labyrinth, avoid damaging its joint face.
Reach technology, means and the effect that predetermined purpose is taked in order further to understand the present invention, see also following about detailed description of the present invention and accompanying drawing, believe purpose of the present invention, feature and characteristics, go deep into and concrete understanding when getting one thus, yet appended graphic only provide with reference to and explanation usefulness, be not to be used for to the present invention's limitr in addition.
Description of drawings
Fig. 1 is the synoptic diagram of conducting film integrated structure first embodiment of the present invention;
Fig. 2 is the synoptic diagram of conducting film integrated structure second embodiment of the present invention;
Fig. 3 is the synoptic diagram of conducting film integrated structure the 3rd embodiment of the present invention;
Fig. 4 is the synoptic diagram of conducting film integrated structure the 4th embodiment of the present invention;
Fig. 5 is the synoptic diagram of conducting film integrated structure the 5th embodiment of the present invention.
[primary clustering symbol description]
1 conducting film integrated structure
11 base materials
11 ' second base material
12 Bewildering resistance layers
13 Newton's ring-resisting layers
130 resins, 131 particulates
14 hard layers
15 nesa coatings
16 diaphragms
17 less important nesa coatings
18 adhesion layers
19 metal levels
Embodiment
See also shown in Figure 1ly, be the synoptic diagram of conducting film integrated structure 1 first embodiment of the present invention.The conducting film integrated structure 1 of present embodiment comprises: a base material 11, a Bewildering resistance layer (Anti-Glare Layer, AG) 12, one anti-newton (Anti-Newton ring Layer, ANR) circular layer 13, a hard layer 14, and a nesa coating 15.
This base material 11 is a transparent resin, and it is polyethylene terephthalate (PET), cellulose triacetate (TAC), poly-how dioctyl phthalate glycol ester (PEN), poly-propylene diester, polyimide, polyethers, polycarbonate, polyamine, tygon, polypropylene or polyvinyl alcohol (PVA), polystyrene, polymethylmethacrylate, Polyvinylchloride, epoxy resin, phenolics etc. or its equivalent.
This Bewildering resistance layer 12 is located at this base material 11 1 sides, and these Bewildering resistance layer 12 surfaces have a leaded light microstructure (figure does not show), in order to increase the light scatter degree, makes light form an even and soft illumination effect in Bewildering resistance layer 12, avoids causing dim not clear halo effect.In addition, this Bewildering resistance layer 12 is the refraction particles (figure does not show) that mix different refractivity in transparent resin.
This Newton's ring-resisting layer 13 is located at the opposite side of this base material 11, and in contrast to Bewildering resistance layer 12, can be used for eliminating the Newton ring effect of optical interference, reaches the permanance and the anti-dazzle characteristic of use.This Newton's ring-resisting layer 13 is made up of a resin 130 and a most particulate 131.Wherein, the size of these particulates 131 is best between 0.5 micron (μ m) to 2.5 microns (μ m).Therefore, can omit the design of the concaveconvex shape and the utmost point labyrinth on general Newton's ring-resisting surface, and avoid damaging its joint face.
This hard layer 14 is located on this Bewildering resistance layer 12, avoids improper external force and causes the scratch or the infringement of this Bewildering resistance layer 12 or base material 11.
This nesa coating 15 is located on this Newton's ring-resisting layer 13, and the thickness of nesa coating 15 between 38 nanometers (nm) between 188 nanometers (nm).Wherein, nesa coating 15 can be selected from the wherein a kind of of indium oxide, sb oxide, zinc oxide, cadmium oxide, Si oxide, aluminum oxide, tin-oxide, gallium oxide, tin indium oxide (ITO), new-type indium-zinc oxide (IZO), zinc paste (GZO), zinc oxide aluminum (AZO), antimony tin oxide (ATO), FTO.
By this, by the design of above-mentioned conducting film integrated structure, under the optical property that does not influence conducting film, can provide in high conductivity, the broad wavelength coverage, the high visible penetrance, and prevent the Newton ring effect, and conducting film integrated structure not fragile and that stability in use is good; Simultaneously, can utilize conductive film structure that conducting film integrated structure is formed, the more firm result of use that is fit to multiple electronic installation is provided.
See also shown in Figure 2ly, be the synoptic diagram of conducting film integrated structure second embodiment of the present invention.The difference of the present embodiment and first embodiment is:
This conducting film integrated structure 1 comprises that more one is arranged at the diaphragm 16 on the nesa coating 15.Wherein, the material of this protective seam 16 can be the release film of polyethylene terephthalate (PET), in order to protection nesa coating 15 and Newton's ring-resisting layer 13, and avoids causing scratch or infringement.
See also shown in Figure 3ly, be the synoptic diagram of conducting film integrated structure the 3rd embodiment of the present invention.The difference of the present embodiment and first embodiment is:
This conducting film integrated structure 1 more comprises one second base material 11 ' and an adhesion layer 18, and the adhesion layer 18 and second base material 11 ' all are arranged between Newton's ring-resisting layer 13 and the nesa coating 15.This adhesion layer 18 is located on this Newton's ring-resisting layer 13; This second base material 11 ' then is located on this adhesion layer 18.In the present invention, second base material 11 ' is a transparent resin, and its material can be polyethylene terephthalate (PET), cellulose triacetate (TAC), poly-how dioctyl phthalate glycol ester (PEN), poly-propylene diester, polyimide, polyethers, polycarbonate, polyamine, tygon, polypropylene or polyvinyl alcohol (PVA), polystyrene, polymethylmethacrylate, Polyvinylchloride, epoxy resin, phenolics etc. or its equivalent.This adhesion layer 18 can be a pressure-sensing glue (PSA) or composite layer (UV-PSA) is isolated in a ultraviolet ray, and by a wet type coating process, with in conjunction with Newton's ring-resisting layer 13 and this second base material 11 '.By this, under the effect that does not influence the Newton's ring-resisting effect, the structure of this enforcement can improve integrally-built intensity.
See also shown in Figure 4ly, be the synoptic diagram of conducting film integrated structure the 4th embodiment of the present invention.The difference of present embodiment and the 3rd embodiment is:
This Newton's ring-resisting layer 13 and the position of this adhesion layer 18 are changed each other, made adhesion layer 18 as the media that sticks together between this base material 11 and this Newton's ring-resisting layer 13.This Newton's ring-resisting layer 13 also directly is incorporated into this second base material 11 '.Similarly, under the effect that does not influence the Newton's ring-resisting effect, the structure of this enforcement also can improve integrally-built intensity.
See also shown in Figure 5ly, be the synoptic diagram of conducting film integrated structure the 5th embodiment of the present invention.The conducting film integrated structure of present embodiment comprises: a base material 11, a Bewildering resistance layer 12, a hard layer 14, a nesa coating 15, one less important nesa coating 17, an adhesion layer 18 and a metal level 19.The difference of present embodiment and the 4th embodiment is:
In adhesion layer 18 1 sides nesa coating 15, metal level 19 and less important nesa coating 17 are set in order respectively, with Newton's ring-resisting layer 13, second base material 11 ' and the nesa coating 15 that replaces the 4th embodiment.
This metal level 19 is a silver medal, aluminium, copper or cadmium; The thickness of this less important nesa coating 17 between 133 nanometers (nm), and is selected from the wherein a kind of of indium oxide, sb oxide, zinc oxide, cadmium oxide, Si oxide, aluminum oxide, tin-oxide, gallium oxide, tin indium oxide (ITO), new-type indium-zinc oxide (IZO), zinc paste (GZO), zinc oxide aluminum (AZO), antimony tin oxide (ATO), FTO between 25 nanometers (nm).
Moreover this Bewildering resistance layer 12 passes through a wet type coating method with hard layer 14, to be incorporated on this base material 11.Pass through a film sputtering and coating mode on this adhesion layer 18, nesa coating 15, metal level 19 and the less important nesa coating 17, being incorporated on this base material 11, and the thickness that adhesion layer 18, nesa coating 15, metal level 19 and less important nesa coating 17 are made up is 60 to 120 nanometers (nm).
Therefore, can make conducting film integrated structure reach the face resistance of 50～300ohm/sq, and make whole penetrance can reach 89～95.
In view of the above, comprehensively the above, conducting film integrated structure of the present invention has following characteristic:
(1), under the optical property that does not influence conductive film, the structure of utilizing conducting film integrated structure to form provides the more firm result of use that is fit to multiple electronic installation, when being exposed under high temperature and the wet environment, also has bigger environmental stability.
(2), provide and have high conductivity, broad wavelength coverage, tool high visible penetrance, prevent the generation of Newton ring effect, and structure is not fragile and stability in use is good.
(3), pass through the setting of a Newton's ring-resisting layer, except avoiding the generation of Newton ring effect, satisfy outside the characteristic of the permanance write input and anti-dazzle, further, by in the Newton's ring-resisting layer, mixing most particulates, effectively omit Newton's ring-resisting laminar surface concaveconvex shape and utmost point labyrinth, avoid damaging its joint face.
The above, only be the detailed description of the specific embodiment of one of the best of the present invention and graphic, feature of the present invention is not limited thereto, be not in order to restriction the present invention, all scopes of the present invention should be as the criterion with claims, and all closing in the embodiment of the spirit variation similar with it of the present patent application claim all should be contained in the category of the present invention, anyly be familiar with this skill person in the field of the invention, can think easily and variation or modify the claim that all can be encompassed in following this case.
Claims (10)
1. a conducting film integrated structure is characterized in that, comprising:
One base material, it is a transparent resin;
One Bewildering resistance layer, it is located at this base material one side;
One Newton's ring-resisting layer, it is located at this substrate opposite side, and this Newton's ring-resisting layer is made up of a resin and a most particulate;
One hard layer, it is located on this Bewildering resistance layer; And
One nesa coating, it is located on this Newton's ring-resisting layer, and the thickness of this nesa coating is between between 38 nanometer to 188 nanometers.
2. conducting film integrated structure as claimed in claim 1 is characterized in that: this base material is the wherein a kind of of polyethylene terephthalate (PET), cellulose triacetate (TAC), poly-how dioctyl phthalate glycol ester (PEN), poly-propylene diester, polyimide, polyethers, polycarbonate, polyamine, tygon, polypropylene or polyvinyl alcohol (PVA), polystyrene, polymethylmethacrylate, Polyvinylchloride, epoxy resin, phenolics; This Bewildering resistance layer has the refraction particle of many different refractivities; The atomic size of this Newton's ring-resisting layer is between 0.5 micron to 2.5 microns; This nesa coating is selected from the wherein a kind of of indium oxide, sb oxide, zinc oxide, cadmium oxide, Si oxide, aluminum oxide, tin-oxide, gallium oxide, tin indium oxide (ITO), new-type indium-zinc oxide (IZO), zinc paste (GZO), zinc oxide aluminum (AZO), antimony tin oxide (ATO), FTO.
3. conducting film integrated structure as claimed in claim 1 is characterized in that: comprise that further one is arranged at the diaphragm on this nesa coating.
4. conducting film integrated structure as claimed in claim 1, it is characterized in that: further comprise second base material of being located between this nesa coating and this Newton's ring-resisting layer, this second base material is the wherein a kind of of polyethylene terephthalate (PET), cellulose triacetate (TAC), poly-how dioctyl phthalate glycol ester (PEN), poly-propylene diester, polyimide, polyethers, polycarbonate, polyamine, tygon, polypropylene or polyvinyl alcohol (PVA), polystyrene, polymethylmethacrylate, Polyvinylchloride, epoxy resin, phenolics.
5. conducting film integrated structure as claimed in claim 4 is characterized in that: be provided with an adhesion layer between this Newton's ring-resisting layer and this second base material, this adhesion layer is that composite layer (UV-PSA) material is isolated in a pressure-sensing glue (PSA) or ultraviolet ray.
6. a conducting film integrated structure is characterized in that, comprising:
One base material, it is a transparent resin;
One Bewildering resistance layer, it is located at this base material one side;
One hard layer, it is located on this Bewildering resistance layer;
One adhesion layer, it is located on the opposite side of this base material;
One Newton's ring-resisting layer, it is located on this adhesion layer;
One second base material, it is located on this Newton's ring-resisting layer; And
One nesa coating, it is located on this second base material.
7. conducting film integrated structure as claimed in claim 6 is characterized in that: this base material and second base material are the wherein a kind of of polyethylene terephthalate (PET), cellulose triacetate (TAC), poly-how dioctyl phthalate glycol ester (PEN), poly-propylene diester, polyimide, polyethers, polycarbonate, polyamine, tygon, polypropylene or polyvinyl alcohol (PVA), polystyrene, polymethylmethacrylate, Polyvinylchloride, epoxy resin, phenolics; This Bewildering resistance layer has the refraction particle of many different refractivities; This nesa coating is selected from the wherein a kind of of indium oxide, sb oxide, zinc oxide, cadmium oxide, Si oxide, aluminum oxide, tin-oxide, gallium oxide, tin indium oxide (ITO), new-type indium-zinc oxide (IZO), zinc paste (GZO), zinc oxide aluminum (AZO), antimony tin oxide (ATO), FTO.
8. a conducting film integrated structure is characterized in that, comprising:
One base material, it is a transparent resin;
One Bewildering resistance layer, it is located at this base material one side;
One hard layer, it is located on this Bewildering resistance layer;
One adhesion layer, it is covering on the opposite side of this base material;
One nesa coating, it is located on this adhesion layer;
One metal level, it is located on this nesa coating; And
One less important nesa coating, it is located on this metal level.
9. conducting film integrated structure as claimed in claim 8 is characterized in that: the thickness of this nesa coating is between between 38 nanometer to 188 nanometers, and the thickness of this less important nesa coating is between between 25 nanometer to 133 nanometers; This base material is the wherein a kind of of polyethylene terephthalate (PET), cellulose triacetate (TAC), poly-how dioctyl phthalate glycol ester (PEN), poly-propylene diester, polyimide, polyethers, polycarbonate, polyamine, tygon, polypropylene or polyvinyl alcohol (PVA), polystyrene, polymethylmethacrylate, Polyvinylchloride, epoxy resin, phenolics; This Bewildering resistance layer has the refraction particle of many different refractivities; This nesa coating and less important nesa coating are selected from the wherein a kind of of indium oxide, sb oxide, zinc oxide, cadmium oxide, Si oxide, aluminum oxide, tin-oxide, gallium oxide, tin indium oxide (ITO), new-type indium-zinc oxide (IZO), zinc paste (GZO), zinc oxide aluminum (AZO), antimony tin oxide (ATO), FTO; This metal level is a silver medal, aluminium, copper or cadmium; This Bewildering resistance layer and hard layer are by a wet type coating method, to be incorporated on this base material.
10. conducting film integrated structure as claimed in claim 8, it is characterized in that: pass through a film sputtering and coating mode on this adhesion layer, nesa coating, metal level and the less important nesa coating, being incorporated on this base material, and the thickness that this adhesion layer, nesa coating, metal level and less important nesa coating made up is 60 to 120 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810134059A CN101634918A (en) | 2008-07-24 | 2008-07-24 | Conducting film integrated structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810134059A CN101634918A (en) | 2008-07-24 | 2008-07-24 | Conducting film integrated structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101634918A true CN101634918A (en) | 2010-01-27 |
Family
ID=41594120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810134059A Pending CN101634918A (en) | 2008-07-24 | 2008-07-24 | Conducting film integrated structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101634918A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102004595A (en) * | 2010-11-23 | 2011-04-06 | 苏州禾盛新型材料股份有限公司 | Single-surface conducting film for projection-type capacitor touch panel |
| CN102019730A (en) * | 2010-12-21 | 2011-04-20 | 苏州禾盛新型材料股份有限公司 | Antifouling fingerprint-resistant and Newton Ring-resistant transparent conductive composite plate |
| CN102092156A (en) * | 2010-11-23 | 2011-06-15 | 苏州禾盛新型材料股份有限公司 | PC transparent conductive composite plate |
| CN102126320A (en) * | 2010-12-21 | 2011-07-20 | 苏州禾盛新型材料股份有限公司 | Newton-ring-resistant transparent conductive composite plate |
| CN102145562A (en) * | 2010-11-23 | 2011-08-10 | 苏州禾盛新型材料股份有限公司 | PC (Polycarbonate) externally-decorative composite board |
| CN102184682A (en) * | 2011-04-27 | 2011-09-14 | 冠捷显示科技（厦门）有限公司 | Optical grade plastic transparent cut display and manufacturing method thereof |
| CN102991038A (en) * | 2012-06-12 | 2013-03-27 | 王成团 | Scratch resistance anti-newton ring protective film and preparation method thereof |
| CN103165225A (en) * | 2011-12-16 | 2013-06-19 | 日东电工株式会社 | Transparent conductive film |
| CN103443751A (en) * | 2011-04-29 | 2013-12-11 | 日本写真印刷株式会社 | Spacer-less input device |
| CN105068288A (en) * | 2015-06-30 | 2015-11-18 | 广州市华惠材料科技有限公司 | Smart light modulation film and preparation method thereof |
| CN105895736A (en) * | 2016-03-15 | 2016-08-24 | 宁波江东波莫纳电子科技有限公司 | Preparation method for high-temperature-resistant flexible substrate-included microcrystalline silicon film |
| CN107305928A (en) * | 2016-04-22 | 2017-10-31 | 三星显示有限公司 | Nesa coating and the electronic equipment including the nesa coating |
| CN111009337A (en) * | 2019-12-12 | 2020-04-14 | 湖南中天碧水膜科技有限公司 | Nano silver wire conductive film |
-
2008
- 2008-07-24 CN CN200810134059A patent/CN101634918A/en active Pending
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102004595A (en) * | 2010-11-23 | 2011-04-06 | 苏州禾盛新型材料股份有限公司 | Single-surface conducting film for projection-type capacitor touch panel |
| CN102092156A (en) * | 2010-11-23 | 2011-06-15 | 苏州禾盛新型材料股份有限公司 | PC transparent conductive composite plate |
| CN102145562A (en) * | 2010-11-23 | 2011-08-10 | 苏州禾盛新型材料股份有限公司 | PC (Polycarbonate) externally-decorative composite board |
| CN102019730A (en) * | 2010-12-21 | 2011-04-20 | 苏州禾盛新型材料股份有限公司 | Antifouling fingerprint-resistant and Newton Ring-resistant transparent conductive composite plate |
| CN102126320A (en) * | 2010-12-21 | 2011-07-20 | 苏州禾盛新型材料股份有限公司 | Newton-ring-resistant transparent conductive composite plate |
| CN102184682A (en) * | 2011-04-27 | 2011-09-14 | 冠捷显示科技（厦门）有限公司 | Optical grade plastic transparent cut display and manufacturing method thereof |
| CN102184682B (en) * | 2011-04-27 | 2014-02-19 | 冠捷显示科技（厦门）有限公司 | Optical grade plastic transparent cut display and manufacturing method thereof |
| CN103443751A (en) * | 2011-04-29 | 2013-12-11 | 日本写真印刷株式会社 | Spacer-less input device |
| CN103443751B (en) * | 2011-04-29 | 2015-12-09 | 日本写真印刷株式会社 | Without distance piece input equipment |
| CN103165225A (en) * | 2011-12-16 | 2013-06-19 | 日东电工株式会社 | Transparent conductive film |
| US9609745B2 (en) | 2011-12-16 | 2017-03-28 | Nitto Denko Corporation | Transparent conductive film |
| CN103165225B (en) * | 2011-12-16 | 2017-04-12 | 日东电工株式会社 | Transparent conductive film |
| CN102991038A (en) * | 2012-06-12 | 2013-03-27 | 王成团 | Scratch resistance anti-newton ring protective film and preparation method thereof |
| CN105068288A (en) * | 2015-06-30 | 2015-11-18 | 广州市华惠材料科技有限公司 | Smart light modulation film and preparation method thereof |
| CN105068288B (en) * | 2015-06-30 | 2017-12-29 | 广州市华惠材料科技有限公司 | A kind of intelligent light modulation film and preparation method thereof |
| CN105895736A (en) * | 2016-03-15 | 2016-08-24 | 宁波江东波莫纳电子科技有限公司 | Preparation method for high-temperature-resistant flexible substrate-included microcrystalline silicon film |
| CN105895736B (en) * | 2016-03-15 | 2017-06-23 | 深圳市金耀辉科技有限公司 | A kind of preparation method of high-temperature flexible substrate microcrystalline silicon film |
| CN107305928A (en) * | 2016-04-22 | 2017-10-31 | 三星显示有限公司 | Nesa coating and the electronic equipment including the nesa coating |
| CN111009337A (en) * | 2019-12-12 | 2020-04-14 | 湖南中天碧水膜科技有限公司 | Nano silver wire conductive film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101634918A (en) | Conducting film integrated structure | |
| JP6444004B2 (en) | Optical stack and display | |
| US11137863B2 (en) | Silver nanostructure-based optical stacks and touch sensors with UV protection | |
| KR101444132B1 (en) | Touch sensing electrode combined with complexed polarization plate and touch screen panel comprising the same | |
| KR101443689B1 (en) | Touch sensing electrode combined with polarization plate | |
| KR200477579Y1 (en) | Touch electrode device | |
| CN105094402A (en) | Touch control display equipment | |
| JP2017502399A (en) | Transparent conductive multilayer assembly | |
| US20130157022A1 (en) | Transparent panel and method of manufacturing the same | |
| US9568646B2 (en) | Methods for reducing diffuse reflection of nanostructure-based transparent conductive films and touch panels made of the same | |
| CN203909746U (en) | Touch display device | |
| TWI556146B (en) | Display touch device | |
| TWI486859B (en) | Capacitive touch panel structure | |
| US8987625B2 (en) | Capacitive touch panel structure | |
| WO2014160345A1 (en) | Methods for reducing diffuse reflection of nanostructure-based transparent conductive films and touch panels made of the same | |
| CN203982828U (en) | A kind of based on nano-silver thread Flat panel touch display screen nesa coating group | |
| JP2013018185A (en) | Conductive multilayer structure and touch panel including the same | |
| CN111916250A (en) | ITO transparent conductive film with high bending resistance | |
| TW201001033A (en) | Integrated structure of a conductive membrane | |
| CN206039472U (en) | Antistatic and high touch accuracy's OLED touch -control display module assembly | |
| CN219695744U (en) | Anti-dazzle capacitor assembly and touch module | |
| CN212570429U (en) | ITO transparent conductive film with high bending resistance | |
| TWM453196U (en) | Touch panel | |
| JP6132699B2 (en) | Transparent conductive sheet and touch panel using transparent conductive sheet | |
| TWM470313U (en) | Touch electrode device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20100127 |