CN101633489A - Induction component and microphone component of micro-electromechanical system - Google Patents

Induction component and microphone component of micro-electromechanical system Download PDF

Info

Publication number
CN101633489A
CN101633489A CN200810135374A CN200810135374A CN101633489A CN 101633489 A CN101633489 A CN 101633489A CN 200810135374 A CN200810135374 A CN 200810135374A CN 200810135374 A CN200810135374 A CN 200810135374A CN 101633489 A CN101633489 A CN 101633489A
Authority
CN
China
Prior art keywords
film
supporter
sensor component
thin film
segmental arc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200810135374A
Other languages
Chinese (zh)
Inventor
吴名清
曾明溪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
YATAIYOUSHI MICROSYSTEM CO Ltd
Asia Pacific Microsystems Inc
Original Assignee
YATAIYOUSHI MICROSYSTEM CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by YATAIYOUSHI MICROSYSTEM CO Ltd filed Critical YATAIYOUSHI MICROSYSTEM CO Ltd
Priority to CN200810135374A priority Critical patent/CN101633489A/en
Publication of CN101633489A publication Critical patent/CN101633489A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Micromachines (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)

Abstract

The invention discloses an induction component of a micro-electromechanical system, which comprises a substrate, a thin film and a plurality of support bodies, wherein the substrate is provided with an opening, the thin film is positioned at the opening and is spaced with the substrate, and the support bodies surround the thin film and are connected between the thin film and the substrate so as to support the thin film. The induction component is characterized in that each support body is provided with an arcuate section having a concave surface toward the thin film, a connecting section protruding from a middle area of the arcuate section to the thin film, and two fixing sections extending from two ends of the arcuate section in a bending mode to the substrate respectively. The support bodies can effectively absorb the influence of residual stress on the thin film, have good supporting rigidity in the direction coming out of a plane, and can increase the sensitivity of the induction component.

Description

The sensor component of MEMS and microphone element
Technical field
The present invention relates to a kind of film sensor component, particularly relate to the sensor component of a kind of MEMS (MEMS, Micro-Electro-Mechanical System) and have the microphone element of this sensor component.
Background technology
The MEMS technology often is applied to make micro-actuator (actuator) and sensor elements such as (sensor), described element mainly has a membrane structure, and by the medium of film generation vibrations as the signal conversion, so the shock sensitivity of film is one of key factor of the described element quality quality of influence.
As shown in Figure 1, with the sensor component 9 that is applied to microphone element is example, sensor component 9 comprises a film 91 and most the supporters 92 that connect film 91 and base material 90, film 91 is normally formed by direct etching on base material 90 with described supporter 92, so film 91 has identical thickness with supporter 92.Yet, general capacitance microphone element is film 91 and electric capacity between an additional electrodes plate (scheming not show) are changed and changes in capacitance is converted to signal, the sensitivity of microphone element (Smicrophone) can be by mechanical sensitivity (mechanical sensitivity, Smechanical) with telecommunication sensitivity (electrical sensitivity, Selectrical) both obtain, and are shown below:
S microphone＝S mechanical×S electrical
Wherein mechanical sensitivity depends on the thickness of film 91, and the thin more then mechanical sensitivity of thickness is high more; The thickness of supporter 92 is then depended in telecommunication sensitivity, if the thickness of supporter 92 is too thin, can cause out-of-plane (out-of-plane) rigidity deficiency, static collapse phenomenon (Pull-in) promptly can take place in low-voltage, when so the thickness of supporter 92 is thicker, can have higher breakdown voltage, then can have preferable telecommunication sensitivity.Because the structure of this sensor component 9, its film 91 is roughly the same with the thickness of supporter 92, though can improve mechanical sensitivity if reduce thickness, but but can reduce telecommunication sensitivity simultaneously, on the contrary, though can improve telecommunication sensitivity if increase thickness, but can reduce mechanical sensitivity simultaneously, therefore cause the contradiction on design thickness.
On the other hand,, be subjected to the influence of residual stress (residual stress) easily, cause film 91 and supporter 92 to produce initial distortion even frustrate Qu Hangwei (buckling behavior) because film 91 has the characteristic of high surface and thickness ratio.When if residual stress is compression (compressive stress), film 91 will be subjected to the strength of inwardly extruding and produce initial distortion, when the size of compression greatly too during critical pressure, can make film 91 frustrate Qu Hangwei, and initial distortion with frustrate Qu Hangwei and all can cause mechanical sensitivity to decline to a great extent.When residual stress was tensile stress (tensile stress), though film 91 can not be out of shape, film 91 structural rigidities own can be subjected to the effect of tensile stress and increase, and also can cause mechanical sensitivity to descend.
From the above mentioned, how to make the supporter of sensor component on the out-of-plane direction, have enough rigidity of support (stiffness), and can discharge the residual stress (stress relieve) of film,, improved space be arranged still can increase the telecommunication sensitivity and the mechanical sensitivity of sensor component simultaneously.
Summary of the invention
The objective of the invention is on the out-of-plane direction, to have enough rigidity of support providing a kind of, and can discharge the sensor component of the residual stress of film.
Another object of the present invention is at the microphone element that a kind of elevating mechanism sensitivity simultaneously and telecommunication sensitivity are provided.
The sensor component of MEMS of the present invention comprises: a base material, a film and most supporter; This base material is formed with a perforate, this film be positioned at this tapping and with this base material separately, described supporter is provided with around this film, and is connected between this film and this base material in order to support this film; It is characterized in that: respectively this supporter has a concave surface towards the bent segmental arc of this film, the linkage section that a zone line by this song segmental arc protrudes out to this diaphragm, and two bend the fixing section that extends to this base material by these song segmental arc two ends respectively.
Respectively should the song segmental arc have a vertical direction and a horizontal direction, this vertical direction generally is vertical with the in-plane of this film, and this horizontal direction generally is parallel with the in-plane of this film.Respectively should the song segmental arc have an one-tenth-value thickness 1/10, be defined as t in this vertical direction h, and have a width value in this horizontal direction, be defined as w, wherein, with t h/ w 〉=3 are preferable, can determine t according to process technique during use hThe high more person of the ratio of/w, ratio is good.And with present micro electronmechanical process technique, w＜3 μ m are preferable.
Aforementioned sensor component can be made by the process technique of general MEMS, and is applicable to and utilizes the micro-electro-mechanical systems element of film vibrations as the signal transfer medium.The microphone element of MEMS of the present invention promptly comprises aforementioned sensor component.
Beneficial effect of the present invention is: the included supporter of sensor component of the present invention has the bent segmental arc of crooked shape, can on out-of-plane (out-of-plane) direction, have enough rigidity of support, can postpone to collapse the generation of phenomenon, to increase telecommunication sensitivity; And on the direction of isoplanar (in-plane), have enough flexible (flexibility), can absorb and discharge residual stress, make film that smooth surface be arranged, to increase mechanical sensitivity, can reach the effect that promotes telecommunication sensitivity and mechanical sensitivity simultaneously so be applied to microphone element with it.
Description of drawings
Fig. 1 is a schematic diagram, and an existing sensor component is described;
Fig. 2 is a schematic diagram, and a preferred embodiment of the sensor component of MEMS of the present invention is described;
Fig. 3 is the partial schematic diagram of a Fig. 2, and a supporter of this preferred embodiment is described;
Fig. 4 is a schematic diagram, illustrates that a film of this preferred embodiment is subjected to residual compressive stress to do the time spent, the stressed situation of this supporter;
Fig. 5 is a schematic diagram, illustrates that this film is subjected to tensile residual stresses to do the time spent, the stressed situation of this supporter;
Fig. 6 is a schematic diagram, and a microphone element of using this preferred embodiment is described;
Fig. 7 is a schematic diagram, and an experimental example of the sensor component of MEMS of the present invention is described;
Fig. 8 is a partial enlarged drawing, and a supporter of this experimental example is described;
Fig. 9 is a schematic diagram, and a comparative example of the sensor component of MEMS of the present invention is described;
Figure 10 is a partial enlarged drawing, and a supporter of this comparative example is described;
Figure 11 is an image that influenced by residual stress with COVENTOR WAVE business software analogue inductive member, and the analog image of simulation example 1 (existing sensor component) is described;
Figure 12 is an image that influenced by residual stress with COVENTOR WAVE business software analogue inductive member, and the analog image of simulation example 2 (sensor component of the present invention) is described;
Figure 13 is the micro-imaging of an experimental example;
Figure 14 is the measurement result that an illustrative experiment example is utilized optical interference striped testing film deflection;
Figure 15 is the micro-imaging of a comparative example; And
Figure 16 is the measurement result that an explanation comparative example utilizes optical interference striped testing film deflection.
The specific embodiment
The present invention is described in detail below in conjunction with drawings and Examples:
Consult Fig. 2 and Fig. 3, a preferred embodiment of the sensor component of MEMS of the present invention.Sensor component 1 comprises a base material 2, a film 3 and most supporter 4.Base material 2 is formed with a perforate 21, film 3 be positioned at perforate 21 places and with base material 2 separately, described supporter 4 is provided with around film 3, and is connected in 2 of film 3 and base materials in order to support film 3.Each supporter 4 has a concave surface towards the bent segmental arc 41 of film 3, the linkage section 42 that a zone line by bent segmental arc 41 protrudes out to film 3, and two bend the fixing section 43 that extends to base material 2 by bent segmental arc 41 two ends respectively.
As shown in Figure 3, each bent segmental arc 41 has one and generally is vertical vertical direction 411 with the in-plane of film 3, and has an one-tenth-value thickness 1/10 (be defined as t on vertical direction 411 h).Each bent segmental arc 41 also has one and generally is parallel horizontal direction 412 with the in-plane of film 3, and has a width value (being defined as w) on 412 in the horizontal direction.Shown in following formula, calculate bent segmental arc 41 at the flexural rigidity of vertical direction 411 (with K vRepresent), and the flexural rigidity of horizontal direction 412 is (with K hExpression), wherein, E represents the young's modulus of material, and l represents the length of bent segmental arc 41.
K v = E · w · t h 3 4 l 3 ... ... formula (1)
K h = E · t h · w 3 4 l 3 ... ... formula (2)
K v K h = t h 2 w 2 ... ... formula (3)
As the formula (3), if K v/ K hRatio big more, expression supporter 4 is good more in the rigidity of support of vertical direction 411 (that is out-of-plane direction), and 412 (that is isoplanar directions) flexible preferable in the horizontal direction, but the effect of absorption of residual residue stress is good more, feasibility with present micro electronmechanical process technique is considered, if t h/ w＞3 can make K v/ K h＞9, wherein w is being preferable less than 3 microns, can make supporter 4 have preferable rigidity of support in the out-of-plane direction, can avoid collapsing phenomenon to promote telecommunication sensitivity, and have preferable flexible in the isoplanar direction, can absorb tensile residual stresses and avoid influencing mechanical sensitivity, its principle that can absorb tensile residual stresses further specifies in hypomere.
Because the fixing section 43 of supporter 4 lays respectively at the both end sides of bent segmental arc 41, and the concave surface of bent segmental arc 41 is towards film 3, when film 3 is subjected to the strength of the inside extruding of residual compressive stress effect generation, can make the bent segmental arc 41 of supporter 4 be subjected to pulling force (directions shown in most parallel arrows among Fig. 4) toward film 3 directions, just like the convex side application of force in bent segmental arc 41, bent segmental arc 41 is subjected to force direction to be difficult for distortion at this, so can support film 3 keep smooth indeformable.Yet, when film 3 is subjected to the strength of tensile residual stresses effect generation expansion outward, bent segmental arc 41 can be subjected to the thrust (directions shown in most individual parallel arrows among Fig. 5) of film 3, because bent segmental arc 41 is easy to generate distortion when concave side is stressed, as shown in Figure 5, bent segmental arc 41 ' is the position after being out of shape, and produces distortion by bent segmental arc 41 and can have the effect that absorbs tensile residual stresses.Therefore, when film 3 is subjected to residual compressive stress or tensile stress is done the time spent, supporter 4 all has the function that discharges residual stress, makes the mechanical sensitivity of film 3 not be subjected to the influence of residual stress, and can have more favorable mechanical sensitivity by more existing sensor component.
Consult Fig. 6,, can form backboard (back plate) 11 on sensor component 1 upper strata, can form the basic structure of microphone element 10 if will form microphone element 10.Sensor component 1 of the present invention and microphone element 10 can utilize the process technique of existing manufacturing MEMS condenser microphone element to make, and this is partly known by industry, is not described in detail in this.
Residual stress is to the influence of deformation of thin membrane amount
Simulation test
Utilize commercial simulation softward COVENTOR WAVE (MEMS CAP company develops) simulation under identical residual stress effect, different film support mechanisms is for the influence of the breakdown voltage of deformation of thin membrane amount and sensor component.
Simulation example 1 is the structure (can referring to Fig. 1) of the existing sensor component of simulation, comprise a film and four supporters, setting the film diameter is that 670 μ m, thickness are 1 μ m, setting its supporter length is that 100 μ m, width are 28 μ m, simulation is when the 20MPa compression, calculating the deformation of thin membrane amount is 2.4 μ m, and breakdown voltage (pull-in voltage) is 8.5V.
Simulation example 2 is structures (can referring to Fig. 2) of simulation sensor component of the present invention, comprises a film and four supporters, and it is identical with simulation example 1 to set film dimensions, setting supporter l=100 μ m, w=2 μ m, t h=6 μ m, simulation is when the 20MPa compression, and calculating the deformation of thin membrane amount is 0.02 μ m, and breakdown voltage (pull-in voltage) is 19.75V.
Simulation example 3 imposes a condition and to simulate example 2 roughly the same, and still, supporter quantity is set at eight, and calculating the deformation of thin membrane amount is 0.034 μ m, and breakdown voltage (pull-in voltage) is 29.25V.
The analog result arrangement is as shown in table 1 below, and the simulation result image that software shows can be referring to Figure 11 and Figure 12 (only with 1,2 representatives of simulation example).Show effectively absorption of residual residue stress of sensor component of the present invention (simulation example 2,3) by table 1, and can improve the rigidity of support of out-of-plane direction, and can significantly reduce the deformation of thin membrane amount compared to existing sensor component (simulation example 1), and can significantly improve breakdown voltage, moreover, if when being applied to large area film, the visual film area increases the quantity of supporter, can have better effect.
Table 1
The simulation example Residual stress The deformation of thin membrane amount Breakdown voltage
??1 ??-20MPa ??2.4μm ??8.5V
??2 ??-20MPa ??0.02μm ??19.75V
??3 ??-20MPa ??0.034μm ??29.25V
Shi Yanli ﹠amp; Comparative example
Consult Fig. 7, experimental example is to form to comprise a rigid body 61 that suspends and four supporters of the present invention 62 in order to support rigid body 61 on the base material 5 of a polysilicon (polysilicon), because rigid body 61 can not be out of shape because of stressed, so can measure the deflection that supporter 62 is represented separately, in this experimental example, specially increase the length of linkage section 621, in order to deflection with an optics interferometer measurement linkage section 621 wherein, observe supporter 62 structures whereby and be subjected to the residual stress effect, Figure 8 shows that the partial enlarged drawing of one of them supporter 62 of being described according to the micro-imaging photo, its actual image photo please be joined Figure 13.
Consult Fig. 9, comparative example is to form the length existing supporter 71 identical with the linkage section 621 (referring to Fig. 7) of the supporter 62 of experimental example on the base material 5 of same polysilicon, described supporter 71 supports the rigid body 72 with the identical size of experimental example equally, and measures the deflection of supporter 71 in the mode of identical experiment example.Figure 10 shows that the partial enlarged drawing of one of them supporter 71 of being described according to the micro-imaging photo, its actual image photo sees also Figure 15.
Owing to being formed on the same base material 5, experimental example and comparative example have identical residual stress, by the linkage section 621 of optical interdferometer difference experiments of measuring example and the deflection of the supporter 71 of comparative example, can be relatively under the effect of identical residual stress, the supporting body structure of experimental example and comparative example is subjected to the residual stress effect, and it is serious more that the big more expression of deflection is influenced by residual stress.The measurement of optical interdferometer can be consulted Figure 14 (experimental example) and Figure 16 (comparative example).
By measurement result as can be known, under the 50MPa residual compressive stress, (record) by base material 5, the about 0.087 μ m of the deflection of the linkage section 621 of experimental example, and the about 8 μ m of the deflection of the supporter 71 of comparative example, the supporting construction that shows the crooked shape of the present invention is compared to existing supporting construction, can significantly reduce the influence of residual stress, be consistent with analog result to deformation of thin membrane.
In sum, the sensor component of MEMS of the present invention, supporter by crooked shape structure, can significantly reduce the influence of residual stress to film, and on the out-of-plane direction, has a good supporting rigidity, can significantly promote breakdown voltage, and can increase the mechanical sensitivity and the telecommunication sensitivity of sensor component, so can reach purpose of the present invention really.

Claims (4)

1. the sensor component of a MEMS comprises: a base material, a film and most supporter; This base material is formed with a perforate, this film be positioned at this tapping and with this base material separately, described supporter is provided with around this film, and is connected between this film and this base material in order to support this film; It is characterized in that: respectively this supporter has a concave surface towards the bent segmental arc of this film, the linkage section that a zone line by this song segmental arc protrudes out to this diaphragm, and two bend the fixing section that extends to this base material by these song segmental arc two ends respectively.
2. the sensor component of MEMS as claimed in claim 1, it is characterized in that: respectively should the song segmental arc have a vertical direction and a horizontal direction, this vertical direction generally is vertical with the in-plane of this film, and this horizontal direction generally is parallel with the in-plane of this film; Respectively should the song segmental arc have an one-tenth-value thickness 1/10, be defined as t in this vertical direction h, and have a width value in this horizontal direction, be defined as w, wherein, t h/ w 〉=3.
3. the sensor component of MEMS as claimed in claim 1 is characterized in that: w＜3 μ m.
4. the microphone element of a MEMS comprises each the described sensor component just like claim 1～3.
CN200810135374A 2008-07-25 2008-07-25 Induction component and microphone component of micro-electromechanical system Pending CN101633489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200810135374A CN101633489A (en) 2008-07-25 2008-07-25 Induction component and microphone component of micro-electromechanical system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN200810135374A CN101633489A (en) 2008-07-25 2008-07-25 Induction component and microphone component of micro-electromechanical system

Publications (1)

Publication Number Publication Date
CN101633489A true CN101633489A (en) 2010-01-27

Family

ID=41592857

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200810135374A Pending CN101633489A (en) 2008-07-25 2008-07-25 Induction component and microphone component of micro-electromechanical system

Country Status (1)

Country Link
CN (1) CN101633489A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102264019A (en) * 2010-05-26 2011-11-30 国立清华大学 Micro-electromechanical condenser microphone
CN102947216A (en) * 2010-03-26 2013-02-27 艾尔默斯半导体股份公司 Micro-electromechanical device and use thereof
CN106375919A (en) * 2015-07-22 2017-02-01 罗伯特·博世有限公司 MEMS component including a diaphragm element which is attached via a spring structure to the component layer structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102947216A (en) * 2010-03-26 2013-02-27 艾尔默斯半导体股份公司 Micro-electromechanical device and use thereof
CN102947216B (en) * 2010-03-26 2015-12-16 艾尔默斯半导体股份公司 Microelectromechanicdevices devices and application thereof
CN102264019A (en) * 2010-05-26 2011-11-30 国立清华大学 Micro-electromechanical condenser microphone
CN106375919A (en) * 2015-07-22 2017-02-01 罗伯特·博世有限公司 MEMS component including a diaphragm element which is attached via a spring structure to the component layer structure
CN106375919B (en) * 2015-07-22 2020-12-08 罗伯特·博世有限公司 MEMS component with membrane element

Similar Documents

Publication Publication Date Title
US7661318B2 (en) Stress isolated pressure sensing die, sensor assembly inluding said die and methods for manufacturing said die and said assembly
CN105934661B (en) Miniature reinforcing wafer-level MEMS force snesor
US20100084721A1 (en) Micro-Electromechanical System Microstructure
US7571651B2 (en) Capacitive pressure sensor and method for fabricating the same
CN104333838A (en) MEMS Device
CN102264020B (en) Micro-Electro-Mechanical condenser microphone
CN100487461C (en) Metal capacitance microaccelerator
Francais et al. Normalized abacus for the global behavior of diaphragms: pneumatic, electrostatic, piezoelectric or electromagnetic actuation
US8191420B2 (en) Proof mass for maximized, bi-directional and symmetric damping in high g-range acceleration sensors
CN101633489A (en) Induction component and microphone component of micro-electromechanical system
CN110411615A (en) A kind of MEMS touch sensor structure of high sensitivity
ITTO20130441A1 (en) DETECTION STRUCTURE FOR A MEMS ACOUSTIC TRANSDUCER WITH IMPROVED DEFORMATION RESISTANCE
JP2007010383A (en) Flexible tactile sensor and its manufacturing method
Chen et al. On the single-chip condenser miniature microphone using DRIE and backside etching techniques
Ying et al. Finite-element analysis of silicon condenser microphones with corrugated diaphragms
DE102011050040A1 (en) Capacitive micro-microphone system i.e. micro-electro-mechanical systems microphone, has membrane whose central portion is supported by supporting portion in order to derive residual stress of membrane outwardly from supporting portion
Czarny et al. New architecture of MEMS microphone for enhanced performances
Huang et al. Develop and implement a novel tactile sensor array with stretchable and flexible grid-like spring
WO2017132968A1 (en) Pressure sensing device and electronic apparatus having same
CN111885471B (en) Capacitive micro-electro-mechanical system microphone, microphone monomer and electronic equipment
TWI448164B (en) Micro electromechanical condenser microphones
Shahiri et al. Analytical analysis of capacitive pressure sensor with clamped diaphragm (research note)
Shavezipur et al. Development of parallel-plate-based MEMS tunable capacitors with linearized capacitance–voltage response and extended tuning range
Tabarestani et al. Analytical analysis of capacitive pressure sensor with clamped diaphragm
CN111350752B (en) Out-of-plane hinge for micro-and nano-electromechanical systems with reduced nonlinearity

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20100127