CN101630644B - Method for manufacturing large-scale integrated circuit lead frame - Google Patents
Method for manufacturing large-scale integrated circuit lead frame Download PDFInfo
- Publication number
- CN101630644B CN101630644B CN 200910101391 CN200910101391A CN101630644B CN 101630644 B CN101630644 B CN 101630644B CN 200910101391 CN200910101391 CN 200910101391 CN 200910101391 A CN200910101391 A CN 200910101391A CN 101630644 B CN101630644 B CN 101630644B
- Authority
- CN
- China
- Prior art keywords
- lead frame
- zone circle
- pins
- guide wheel
- chip island
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000009713 electroplating Methods 0.000 claims abstract description 22
- 238000005520 cutting process Methods 0.000 claims abstract description 9
- 238000007747 plating Methods 0.000 claims description 42
- 230000005540 biological transmission Effects 0.000 claims description 12
- 238000004080 punching Methods 0.000 claims description 11
- 239000007921 spray Substances 0.000 claims description 10
- 210000003205 muscle Anatomy 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 5
- 238000006073 displacement reaction Methods 0.000 abstract description 7
- 238000012797 qualification Methods 0.000 abstract description 4
- 238000003466 welding Methods 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000000047 product Substances 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000012858 packaging process Methods 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses a method for manufacturing a large-scale integrated circuit lead frame, which overcomes the defect of lower index qualification rate of the coplanarity and the displacement of pins of a lead frame manufactured in the prior art. The method comprises the following steps: (1) continuously stamping: continuously stamping a zone ring with a lead frame original blank on a die; (2) continuously electroplating: electroplating the zone ring with the lead frame original blank, wherein the electroplating area comprises the root welding area of the pins and the front surface of the chip island; and (3) slicing and confirming the size: cutting and flaking the electroplated zone ring to obtain a single plate lead frame piece, wherein in the step of continuous stamping, a connecting rib for connecting the end parts of a plurality of pins at each side into a whole is retained at one end of the pins in the lead frame original blank approaching to the four sides of the chip island, and in the step of slicing and confirming the size, when the zone ring is cut and the size is confirmed, the connecting rib of the end parts of the pins approaching to the four sides of the chip island is also cut off to obtain a finished lead frame. The invention can greatly improve the qualification rate of the coplanarity and the displacement of the pins of the finished lead frame.
Description
Technical field
The present invention relates to a kind of manufacturing technology of semiconductor microactuator used for electronic packaging lead frame product, especially refer to the manufacture method of punching press types of leads framework.
Background technology
Fast development along with science and technology, especially the fast development of semiconductor microactuator electronic and intelligentized type technology, the large scale integrated circuit components and parts present miniaturization, slimming and integrated industry development situation just day by day, therefore match with it, as the circuit lead frame parts of large scale integrated circuit basic device, its profile thickness day by day is tending towards slim, the peripheral pin number of chip island is individual surplus in the of ten at least, dozens of at most, the processing and manufacturing difficulty will be far longer than common lead frame of triode product.As everyone knows, the manufacture of existing lead frame product mainly comprises etching and punching press two class production technologies, compare with the former, the latter because of have high speed, advantage is extensively adopted application by producer in the industry efficiently.When adopting Sheet Metal Forming Technology to make, operations such as the continuous punch forming of zone circle, continuous electroplating and section packing have been generally comprised, an independent lead frame unit surplus every sheet material of lead wire frame after the packing often includes 10, after semiconductor integrated circuit package producer uses this type of sheet material of lead wire frame and encapsulates, the unnecessary link of property excision again, produce 10 surplus a semiconductor integrated circuit.With the industry code is that the lead frame of LQFP44F model is an example, and the copper strips base material thickness of this product only is 0.15mm, and 11 pins of the every side tool of chip island amount to 44; In order to ensure carrying out smoothly of follow-up packaging process, the technical coplanarity of chip island four side pins that requires is no more than 0.12mm, and the adjacent leads end displacement is no more than 0.05mm; In actual manufacture process, existing technology be on zone circle once the property punching press provide the semi-finished product zone circle of lead frame finished form, the packing of electroplating again and cut into slices; And this half-finished zone circle is in follow-up plating and zone circle is cut in the operation of sheet material, tend to since disconnected from each other, the rigidity in chip island four side pin ends a little less than, its many pin very easily is subjected to electroplating guide wheel and mask band pressure, electroplate liquid impact and during the section transmission and the level friction of die surface and the dislocation that deforms, make the coplanarity and the displacement index of finished product lead frame pin exceed the technical standard scope, product qualified rate descends, and can't satisfy follow-up large scale integrated circuit packaging process and use required.
Summary of the invention
The technical problem to be solved in the present invention is coplanarity and lower defective and the deficiency of displacement index qualification rate that overcomes existing large-scale integrated circuit lead frame pin, provide the manufacture method of the large-scale integrated circuit lead frame that a kind of production efficiency height, end product quality are stable, qualification rate is high to society, use required to satisfy follow-up large scale integrated circuit packaging process.
The technical solution adopted for the present invention to solve the technical problems is: a kind of manufacture method of large-scale integrated circuit lead frame comprises following processing step: 1. punching press continuously: the lead frame zone circle of base is just provided in punching press continuously on mould; The first base of described lead frame comprises the rectangular dies island of central area and is distributed in a plurality of pins of described chip island four sides that described chip island is connected with zone circle by being located at its brace of four jiaos; 2. continuous electroplating: with the described lead frame of tool just the described zone circle of base electroplate, the plating area comprises the root weld district and the described chip island front of described pin; 3. the scale of cutting into slices: the described zone circle after will electroplating cuts off burst, obtains single edition lead frame piece, a plurality of finished product lead frame of tool unit in every edition lead frame piece;
In continuous punch steps, described lead frame is interior a plurality of pins one end near described chip island four sides of base just, remains with company's muscle that a plurality of pins of every side end is fused;
In the continuous electroplating step, described zone circle is subjected to a plurality of directive wheel traction transmissions, is provided with the plating guide wheel between two adjacent directive wheels; Described zone circle shuttles back and forth between described directive wheel and described plating guide wheel; Described plating guide wheel inner chamber is provided with spray ring, and electroplate liquid is fan-shaped by the nozzle ring of described spray ring and radially produces coating in the electroplating hole plating area that is injected into described zone circle through described plating guide wheel;
In section scale step, excision synchronously connects muscle near the pin end of described chip island four sides when cutting off the zone circle scale, obtains the finished product lead frame.
Described zone circle is provided with the mask band with the outer surface that described plating guide wheel contains mutually, described mask band and the transmission of described zone circle constant speed; The containing angle of described zone circle and described plating guide wheel is 120 °~150 °.
The manufacture method of large-scale integrated circuit lead frame of the present invention, when providing the zone circle semi-finished product of the first base of lead frame by the continuous punching press of zone circle raw material, in the first base of lead frame,, remain with company's muscle that a plurality of pins of every side end is fused near a plurality of pins one end of chip island four sides; This setting that connects muscle is compared than the single cantilever type pin that directly stamps out that prior art adopts, the pin rigidity of chip island four sides strengthens greatly, can effectively resist plating guide wheel suffered in the follow-up manufacturing process and mask band pressure, the influence of electroplate liquid impulsive force, alleviate and reduce the deformation of pin port warpage greatly and take place, the hook dislocation distortion of pin port and die surface in the time of also can effectively avoiding simultaneously cutting into slices transmission; The continuous electroplating step that the technology of the present invention adopts, with the tool lead frame just the zone circle of base by a plurality of directive wheels traction transmissions and shuttle back and forth between described directive wheel and described plating guide wheel; Electroplate liquid is fan-shaped by the nozzle ring of described spray ring and radially produces coating in the electroplating hole plating area that is injected into described zone circle through described plating guide wheel; Described zone circle is provided with the mask band with the outer surface that described plating guide wheel contains mutually, when realizing that continuous high-efficient is produced, can guarantee the self-consistentency of electrodeposited coating region shape; When cutting off the zone circle scale, excise the pin end synchronously and connect behind the muscle packing at once, effectively guarantee the coplanarity of finished product lead frame pin and displacement index in the specification requirement scope, thereby obtain high-quality lead frame product.That patent system making method of the present invention has is novel, operation simple, the significant advantage of being benefited, and can be widely used in the large-scale integrated circuit lead frame manufacturing.
Description of drawings
Fig. 1 is the zone circle structural representation of the first base of tool lead frame of the continuous punching press of the present invention.
Fig. 2 is that zone circle shown in Figure 1 is electroplated the back structural representation.
Fig. 3 is a structural representation behind the zone circle section scale shown in Figure 2.
Fig. 4 is the A portion structure for amplifying schematic diagram of Fig. 1.
Fig. 5 is the B portion structure for amplifying schematic diagram of Fig. 2.
Fig. 6 is the C portion structure for amplifying schematic diagram of Fig. 3.
Fig. 7 is an electroplanting device structural representation of the present invention.
Fig. 8 is a lead frame chip island of the present invention position rearview.
Fig. 9 is that the D-D of Fig. 6 is to the cross section structure schematic diagram.
Embodiment
The manufacture method of large-scale integrated circuit lead frame of the present invention, with the manufacturing code is that the lead frame product of LQFP44F model is an example, in conjunction with Fig. 6, Fig. 8 and shown in Figure 9, the finished parts of each lead frame unit comprises rectangular dies island 6 that is positioned at the central area and a plurality of pins 4 that are distributed in described chip island 6 four sides, 11 pins of every side tool 4 of described chip island 6 amount to 44, and described chip island 6 is connected with lead frame substrate 8 by being located at its brace of four jiaos 7; In order to ensure carrying out smoothly of follow-up packaging process, the technical coplanarity of chip island four side pins that requires is no more than 0.12mm, and the adjacent leads end displacement is no more than 0.05mm; Described chip island 6 is used for the bearing integrated chip, is provided with dowel 3 reinforcement by connection between the adjacent described pin 4, to guarantee not misplace the evenness of raising product in the processing and manufacturing process; The root weld district 5 of described pin 4 is around described chip island 6, and described root weld district 5, described chip island 6 edges 10 positive silver-plated is to improve Herba Anoectochili roxburghii at the firmness of described pin 4 during with the welding of integrated circuit (IC) chip footing; Being positioned at the rectangular area that described dowel 3 inboard chain-dotted lines surround is encapsulation region 1, and the described pin 4 in described encapsulation region 1 outside is used for the welding that patches with wiring board; Described brace 7 bends downwards with the end that described chip island 6 is connected, and makes described chip island 6 planes be lower than described zone circle 8 planes, has improved the mechanical strength of each lead frame unit thus greatly; The back side of described chip island 6 is evenly equipped with regularly arranged pit 9, helps to encapsulate the raising of back sealing and waterproof and dampproof performance.
As shown in Figure 7, electroplanting device of the present invention comprises the directive wheel 15 of the described zone circle 8 plating transmissions of a plurality of tractions, be provided with between described two adjacent directive wheels 15 and electroplate guide wheel 17, the axle core position of described plating guide wheel 17 is higher than the axle core line of adjacent two directive wheels 15; Described zone circle 8 shuttles back and forth successively, detours between described directive wheel 15 and described plating guide wheel 17; The inner chamber of described plating guide wheel 17 is provided with spray ring 18, and described spray encircles 18 tops and is provided with the nozzle ring 19 that internal diameter is slightly less than described plating guide wheel 17; Electroplate liquid is fan-shaped by the nozzle ring 19 of described spray ring 18 and radially produces coating in electroplating hole (omitting in the accompanying drawing) plating area that is injected into described zone circle 8 through described plating guide wheel 17; For preventing that electroplate liquid is by the outside seepage in described zone circle 8 plating areas, assurance electrodeposited coating shape consistency, described zone circle 8 is provided with mask band 20 with the outer surface that described plating guide wheel 17 contains mutually, described mask band 20 keeps the constant speed transmission with described zone circle 8, described zone circle 8 is 120 °~150 ° with the containing angle of described plating guide wheel 17, to obtain enough plating sealing loads.
Continue in conjunction with the accompanying drawings below, the manufacture method of narration large-scale integrated circuit lead frame of the present invention comprises following processing step:
1. punching press continuously: as shown in Figure 1 and Figure 4, the LQFP44F lead frame zone circle 8 of base 11 is just provided in punching press continuously on mould, and described zone circle 8 is by location aperture 2 transmissions of being located at its dual-side; Described lead frame just base 11 is and is set in two parallel rows up and down, the first base 11 of each described lead frame comprises the rectangular dies island 6 of central area and is distributed in a plurality of pins 4 of described chip island 6 four sides that described chip island 6 is connected with zone circle 8 by being located at its brace of four jiaos 7;
2. continuous electroplating: as Fig. 2 and shown in Figure 5, with the described lead frame of tool just the described zone circle 8 of base 11 electroplate, the plating area comprises the root weld district 5 and described chip island 6 fronts of described pin 4;
3. the scale of cutting into slices: as Fig. 3 and shown in Figure 6, the described zone circle after electroplating 8 is cut off bursts, obtain single edition lead frame piece, a plurality of finished product lead frame of tool unit in every edition lead frame piece;
In continuous punch steps, described lead frame is base 11 interior a plurality of pins 4 one ends near described chip island 6 four sides just, remain with company's muscle 12 that a plurality of pins of every side 4 ends are fused;
In the continuous electroplating step, as shown in Figure 7, described zone circle 8 is subjected to a plurality of directive wheel 15 traction transmissions, is provided with between two adjacent directive wheels 15 and electroplates guide wheel 17; Described zone circle 8 shuttles back and forth between described directive wheel 15 and described plating guide wheel 17; Described plating guide wheel 17 inner chambers are provided with spray ring 18, and electroplate liquid is fan-shaped by the nozzle ring 19 of described spray ring 18 and radially produces coating in electroplating hole (omitting in the accompanying drawing) plating area that is injected into described zone circle 8 through described plating guide wheel 17; Described zone circle 8 is provided with mask band 20 with the outer surface that described plating guide wheel 17 contains mutually, described mask band 20 and described zone circle 8 constant speed transmissions; Described zone circle 8 is 120 °~150 ° with the containing angle of described plating guide wheel 17;
In section scale step, excision synchronously connects muscle 12 near pin 4 ends of described chip island 6 four sides when cutting off zone circle 8 scales, obtains the finished product lead frame.
In sum, present embodiment is that the lead frame product of LQFP44F model is an example with the manufacturing code only, do not represent restriction to the inventive method, lead frame in the described zone circle just base arrangement mode can be adjusted flexibly according to the concrete model of product, can be that the above many rows mode of two rows is provided with; The plating area of described chip island can be positive Zone Full, also can only be ring-shaped edge position all around; In plating step, directive wheel can be adjusted according to the different of lead frame plating area with the quantity of electroplating guide wheel; Generally speaking, every manufacture method of the present invention not being carried out material alterations all should fall into the protection range of patent of the present invention.
Claims (3)
1. the manufacture method of a large-scale integrated circuit lead frame comprises following processing step:
1. punching press continuously: the lead frame zone circle (8) of base (11) is just provided in punching press continuously on mould; The first base (11) of described lead frame comprises the rectangular dies island (6) of central area and is distributed in a plurality of pins (4) of described chip island (6) four sides that described chip island (6) is connected with zone circle (8) by being located at its brace of four jiaos (7);
2. continuous electroplating: with the described lead frame of tool just the described zone circle (8) of base (11) electroplate, the plating area comprises the root weld district (5) and described chip island (6) front of described pin (4);
3. the scale of cutting into slices: the described zone circle (8) after will electroplating cuts off burst, obtains single edition lead frame piece, a plurality of finished product lead frame of tool unit in every edition lead frame piece;
It is characterized in that:
In continuous punch steps, described lead frame is interior a plurality of pins (4) one ends near described chip island (6) four sides of base (11) just, remain with company's muscle (12) that a plurality of pins of every side (4) end is fused;
In the continuous electroplating step, described zone circle (8) is subjected to a plurality of directive wheels (15) traction transmission, is provided with between adjacent two directive wheels (15) and electroplates guide wheel (17); Described zone circle (8) shuttles back and forth between described directive wheel (15) and described plating guide wheel (17); Described plating guide wheel (17) inner chamber is provided with spray ring (18), and electroplate liquid is fan-shaped by the nozzle ring (19) of described spray ring (18) and radially produces coating in the electroplating hole plating area that is injected into described zone circle (8) through described plating guide wheel (17);
In section scale step, excision synchronously connects muscle (12) near pin (4) end of described chip island (6) four sides when cutting off zone circle (8) scale, obtains the finished product lead frame.
2. the manufacture method of large-scale integrated circuit lead frame according to claim 1, it is characterized in that: described zone circle (8) is provided with mask band (20) with the outer surface that described plating guide wheel (17) contains mutually, described mask band (20) and described zone circle (8) constant speed transmission.
3. the manufacture method of large-scale integrated circuit lead frame as claimed in claim 1 or 2, it is characterized in that: described zone circle (8) is 120 °~150 ° with the containing angle of described plating guide wheel (17).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200910101391 CN101630644B (en) | 2009-07-31 | 2009-07-31 | Method for manufacturing large-scale integrated circuit lead frame |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200910101391 CN101630644B (en) | 2009-07-31 | 2009-07-31 | Method for manufacturing large-scale integrated circuit lead frame |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101630644A CN101630644A (en) | 2010-01-20 |
CN101630644B true CN101630644B (en) | 2011-01-05 |
Family
ID=41575696
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200910101391 Expired - Fee Related CN101630644B (en) | 2009-07-31 | 2009-07-31 | Method for manufacturing large-scale integrated circuit lead frame |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101630644B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102071078B1 (en) | 2012-12-06 | 2020-01-30 | 매그나칩 반도체 유한회사 | Multi chip package |
CN107195611B (en) * | 2017-05-27 | 2023-06-16 | 中国电子科技集团公司第十三研究所 | Lead frame and manufacturing method of shell assembly |
CN107731692A (en) * | 2017-10-13 | 2018-02-23 | 上海贝岭股份有限公司 | The method and integrated circuit of the Plastic Package of integrated circuit |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101110368A (en) * | 2007-07-23 | 2008-01-23 | 宁波康强电子股份有限公司 | Manufacturing method for lead frame used for integrated circuit |
CN201212064Y (en) * | 2008-06-26 | 2009-03-25 | 铜陵丰山三佳微电子有限公司 | Rolling electroplating equipment for lead frame |
-
2009
- 2009-07-31 CN CN 200910101391 patent/CN101630644B/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101110368A (en) * | 2007-07-23 | 2008-01-23 | 宁波康强电子股份有限公司 | Manufacturing method for lead frame used for integrated circuit |
CN201212064Y (en) * | 2008-06-26 | 2009-03-25 | 铜陵丰山三佳微电子有限公司 | Rolling electroplating equipment for lead frame |
Also Published As
Publication number | Publication date |
---|---|
CN101630644A (en) | 2010-01-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN203426280U (en) | Continuous stamping die for manufacturing connector terminal | |
CN105689547B (en) | Stamping die, streamline, method for the Special-shaped iron core of igniter for automobile | |
CN102074541A (en) | Carrier-free pin-free grid-array IC (Integrated Circuit) chip packaging part and production method thereof | |
CN101630644B (en) | Method for manufacturing large-scale integrated circuit lead frame | |
CN107182170A (en) | A kind of printed wiring board manufacture craft of the nut containing extruding | |
CN205183497U (en) | Make continuous stamping die of board to board connector terminal | |
CN217822787U (en) | Lead frame structure of incomplete glue is prevented to fin for integrated circuit | |
CN101252091B (en) | Forming method of sliver hole on substrate and substrate structure | |
CN102044445B (en) | Method for manufacturing lead frame of no-lead semiconductor package (QFN) | |
CN105098422A (en) | Integral connector end structure and fabrication method thereof | |
CN115255131A (en) | Preparation method of stamping bracket | |
CN201285765Y (en) | Half-finished product structure for novel integrated circuit semiconductor device mass production | |
CN204054661U (en) | A kind of annulus pasting mould of enhancing productivity | |
CN106734600A (en) | A kind of appliance contact bearing punching press multi-station progressive die and blank operation | |
CN202701158U (en) | Continuous stamping die of mobile phone shell | |
CN112688143A (en) | ECU small-size PIN needle dense arrangement production process | |
CN102544711A (en) | Antenna oscillator and production method thereof as well as communication equipment | |
CN102847786B (en) | Seriation porous complexity patches process for stamping and the particular manufacturing craft thereof of metalwork | |
CN212848386U (en) | High-density frame structure | |
CN206953166U (en) | A kind of mould for FPC punch dies | |
CN219684211U (en) | Welding die and die assembly for rectifier bridge | |
CN100440463C (en) | Production of surface-adhering lead wire frame | |
CN204685839U (en) | A kind of bending progressive die | |
CN213936614U (en) | Small-size bent angle copper nose | |
CN220127379U (en) | Stress release pulling and male die structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110105 |