CN101630125A - Film transfer material - Google Patents
Film transfer material Download PDFInfo
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- CN101630125A CN101630125A CN200910158106A CN200910158106A CN101630125A CN 101630125 A CN101630125 A CN 101630125A CN 200910158106 A CN200910158106 A CN 200910158106A CN 200910158106 A CN200910158106 A CN 200910158106A CN 101630125 A CN101630125 A CN 101630125A
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- film
- transfer material
- film transfer
- adhesive force
- novolac resin
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
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- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a film transfer material that has no phenomenon that a photoresist layer residue is tainted after removing a support body film before exposure during the application to lithography etching process, so that the definition can be improved.
Description
Technical field
The present invention relates to film transfer material.
Background technology
Usually, the sensing optical activity transfer materials of film like uses dry film form (hereinafter referred to as " dry film photoresist ") typically.
The dry film photoresist is generally used for printed-wiring board (PWB), tellite, IC encapsulation, metal release imaging etc., generally includes three layers of support films, photoresist layer, diaphragm.
The dry film photoresist is divided into minus and eurymeric again according to the reaction principle difference, and minus dry film photoresist is at exposed portion generation photo-crosslinking, and unexposed portion is then fallen by alkali cleaning and stays the photoresist pattern; The positive type dry film photoresist is at the exposure position photolysis reaction to take place, and is developed by alkali, stays unexposed position and forms the photoresist pattern.
About the positive type dry film photoresist, the photoresist layer comprises alkali soluble resin and the sensing optical activity compound that is reacted by light, along with forming film by photoresist liquid, has certain adhesion.
In the dry film photoresist, the effect of the supporter from support film to the photoresist layer makes the photoresist layer operation when exposure with adhesion become easy.On the other hand, diaphragm then is formed at the surface that the photoresist layer is not formed with support film, and activation prevents the effect of photoresist layer damage.
Enumerate and use such dry film photoresist; as an example; enumerate the example that uses the positive type dry film photoresist to form method of patterning; to pass through following processing procedure: in the time of on being coated on tellite; peel off diaphragm earlier; after being laminated on the copper facing film overlapping board, cover the shielding irradiation ultraviolet radiation of wanting pattern, use The suitable solvent to wash exposed portion off and develop to expose.Usually, under the condition that is attached with support film on the photoresist layer, expose, even it is also passable not consider painstakingly to peel off support film from the photoresist layer thus.
But in the situation of some positive type dry film photoresist, might exist in the photoresist layer can film forming residual solvent, for this solvent that volatilizees, exposes after also can peeling off support film sometimes.
When this dry film photoresist is used in the formation of circuit pattern, might carry out peeling off of secondary film, be peeling off of diaphragm for the first time, is peeling off of support film for the second time.
Just there is the problem that leaves residue on the film as after the above-mentioned stripping film.Especially peel off before exposure behind the support film its situation of exposing, it is more serious that the problem of residue might become.
Summary of the invention
In the one embodiment of the present invention, provide a kind of film transfer material, the photoresist residue can not take place because of peeling off of film in this film transfer material when being applied to micro image etching procedure.
In another embodiment of the present invention, provide a kind of film transfer material, there is not the phenomenon of being infected with photoresist layer residue in this film transfer material remove support film before exposure after, so can promote clearness when being applied to micro image etching procedure.
In the one embodiment of the present invention, providing a kind of film transfer material, comprise support film, photolysis photoresist layer and diaphragm, is 0.1kg/100 * 100mm with undefined first adhesive force
2Below, second adhesive force is 0.1kg/100 * 100mm
2Below, and second adhesive force has the value less than first adhesive force.
First adhesive force: in that (indium tin oxide ITO) is coated with into thickness by indium tin oxide
And width 100 * 100mm
2Glass substrate on, behind the condition laminated thin membrane type transfer materials with speed 2.0m/min, 110 ℃ of temperature, heating roller pressure 10-90psi, from the required power of photoresist pull-up mould support film.
Second adhesive force: the film transfer material severing is become width 100 * 100mm
2After, from the photoresist layer required power of demoulding diaphragm only.
Herein, adhesive force is to use universal testing machine (UTM, Instron company makes) value of peel strength when measuring the demoulding.
In the film transfer material of an embodiment of the present invention, first adhesive force can be 0.05-0.07kg/100 * 100mm
2, second adhesive force is 0.05-0.07kg/100 * 100mm
2
In the film transfer material of an embodiment of the present invention, photolysis photoresist layer can comprise that alkali soluble resins and azo are the sensing optical activity compound.
At this moment, alkali soluble resins can be novolac resin.
According to suitable embodiment, alkali soluble resins can be the cresols novolac resin.At this moment, the cresols novolac resin can be that (by gel permeation chromatography (gelpermeation chromatography GPC) measures) is 2 to weight average molecular weight, 000-30,000 resin.Moreover, between the cresols novolac resin can be/content of paracresol is with 4: 6-6: the resin that 4 weight basis ratio is mixed.In addition, it is 8 that the cresols novolac resin also can be weight average molecular weight (being measured by GPC), 000-30, and 000 cresols novolac resin and weight average molecular weight (being measured by GPC) they are 2,000-8,000 cresols novolac resin is with 7: 3-9: the resin that 1 weight ratio is mixed.
In the film transfer material of an embodiment of the present invention, azo is that the sensing optical activity compound can be from 2,3,4,4 '-tetrahydroxybenzophenone-1,2-azo group naphthoquinones-5-sulphonic acid ester, 2,3,4-trihydroxybenzophenone-1,2-azo group naphthoquinones-5-sulphonic acid ester, (1-[1-(4-hydroxyphenyl) isopropyl]-4-[1, two (4-hydroxyphenyl) ethyls of 1-] benzene)-1, selected more than one in 2-azo group naphthoquinones-5-sulphonic acid ester.
In the film transfer material of an embodiment of the present invention, photolysis photoresist layer can comprise from 2,3,4-trihydroxybenzophenone, 2,3,4,4 '-tetrahydroxybenzophenone, 1-[1-(4-hydroxyphenyl) isopropyl]-4-[1, two (4-hydroxyphenyl) ethyls of 1-] sensitizer of selected more than one in the benzene.
In the film transfer material of an embodiment of the present invention, the thickness of diaphragm can be 15-30 μ m.
In another embodiment of the present invention, the display module substrate that provides the film transfer material that utilizes embodiment of the present invention to form pattern.
According to the film transfer material of an embodiment of the present invention, can obtain in micro image etching procedure, can improving processing procedure stability and operation, and photoresist layer residue can residually do not arranged on the film, thereby improve the photoresist pattern of sharpness.
Embodiment
The film transfer material of an embodiment of the present invention comprises support film, photolysis photoresist layer and diaphragm; the effect of diaphragm activation protection photoresist layer in manufacture process and roller procedure for processing is that it is peeled off the back at substrate upper strata press polish blocking layer in micro image etching procedure.
About support film, be the effect that photolysis photoresist tunic is supported in activation, usually exist carry out under the condition of support film developing behind the exposure manufacture process, processing procedure such as etching, when peeling off, be stripped from then with the photoresist layer.
But, situation about the film transfer material that comprises some photolysis photoresist layer, also have in for will solve the problem of film embrittlement by the film forming process of photoresist liquid, make a part of dissolvent residual make the situation of its activation plastifier function, and since other reason also can after removing support film, expose sometimes.
Considering that from these angles a kind of film transfer material is provided in the one embodiment of the present invention, and it comprises support film, photolysis photoresist layer and diaphragm, is 0.1kg/100 * 100mm with undefined first adhesive force
2Below, second adhesive force is 0.1kg/100 * 100mm
2Below, and second adhesive force has the value less than first adhesive force.
First adhesive force: be coated with into thickness by ITO
And width 100 * 100mm
2Glass substrate on, behind the condition laminated thin membrane type transfer materials with speed 2.0m/min, 110 ℃ of temperature, heating roller pressure 10-90psi, from the required power of photoresist pull-up mould support film.
Second adhesive force: the film transfer material severing is become width 100 * 100mm
2After, from the photoresist layer required power of demoulding diaphragm only.
At this moment, adhesive force is to use UTM (manufacturing of Instron company) value of peel strength when measuring the demoulding.
Herein, first adhesive force is the adhesive force between photoresist layer-support film, and second adhesive force is the adhesive force between diaphragm-photoresist layer.
If first adhesive force is greater than 0.1kg/100 * 100mm
2, then in micro image etching procedure, behind the laminated film, when before exposure, peeling off support film, have the residual problem to support film of photoresist layer residue.
In addition, if second adhesive force greater than 0.1kg/100 * 100mm
2, then when peeling off diaphragm for film transfer material is applied to micro image etching procedure, might be on diaphragm residual light blocking layer residue.
On the other hand, be unallowed if when peeling off diaphragm, peeling off of support film taken place, so first adhesive force will have the value greater than second adhesive force.
During stable when considering the adhesive force between release property, the photoresist layer and removing other film, suitable is that first adhesive force is 0.05-0.07kg/100 * 100mm
2, second adhesive force is 0.05-0.07kg/100 * 100mm
2
As long as satisfy the adhesive force of scope as mentioned above, then its kind is not particularly limited, in the film transfer material of an embodiment of the present invention, support film comprises polycarbonate film, tygon (PE) film, polypropylene (PP) film, orientation polypropylene (OPP) film, polyethylene terephthalate (PET) film, Polyethylene Naphthalate (PEN) film, ethylene-vinyl acetate copolymer (EVA) film, vinyl, and other polyolefin film that is fit to, epoxy resin thin film etc.Especially preferable polyolefin film comprises PP film, PE film, eva film etc.Preferable vinyl comprises Polyvinylchloride (PVC) film, polyvinyl acetate (PVA) (PVA) film, polyvinyl alcohol (PVA) (PVOH) film etc.Especially preferable plasticon comprises polystyrene (PS) film, acrylonitrile-butadiene-styrene (ABS) (ABS) film etc.Especially, support film can be the light transmission support film and shines the transparent membrane of this degree of photoresist layer.Support film is that activation is used to support the framework that eurymeric photoresist resin film develops, and preferably has the thickness of 10-50 mu m range, more preferably has the thickness of 15-50 mu m range, especially preferably has the thickness of 15-25 mu m range.
As long as diaphragm satisfies above-mentioned adhesive force scope, then be not particularly limited, as an example, preferably formed by PE film, PET film, PP film etc., more preferably its thickness is 15-30 μ m.
In the film transfer material of the present invention, the photoresist layer can comprise that alkali soluble resins and azo are the sensing optical activity compound, particularly, can use novolac resin as alkali soluble resins, especially preferably comprises the cresols novolac resin.
Novolac resin can obtain through making phenols composition independent or aldehydes and acidic catalyst carry out polycondensation reaction.
At this moment, phenols is not particularly limited, can enumerate phenol, orthoresol, metacresol, paracresol, 2, the 3-xylenol, 2, the 5-xylenol, 3, the 4-xylenol, 3, the 5-xylenol, 2,3,5-pseudocuminol-xylenol, the 4-tert-butyl phenol, the 2-tert-butyl phenol, the 3-tert-butyl phenol, 4-methyl-monohydric phenols such as 2-tert-butyl phenol, beta naphthal, 1, the 3-dihydroxy naphthlene, 1, the 7-dihydroxy naphthlene, 1, the 5-dihydroxy naphthlene, resorcinol, catechol, p-dihydroxy-benzene, bisphenol-A, phloroglucin, polyhydric phenol such as pyrogallol, can be used singly or in combination from wherein selecting, especially be preferably metacresol, the combination of paracresol.
Aldehydes is not particularly limited, can enumerate formaldehyde, trioxane, paraformaldehyde, benzaldehyde, acetaldehyde, propionic aldehyde, phenylacetaldehyde, α-or β-Ben Bingquan, neighbour, or parahydroxyben-zaldehyde, glutaraldehyde, terephthalaldehyde etc., they can be used singly or in combination.
The preferable weight average molecular weight (according to the GPC determination method) of cresols novolac resin is 2,000-30,000, since according between/content of paracresol is than different, rerum naturas such as the film speed of cresols novolac resin and residual film ratio are promptly different, thus/content of paracresol preferable according to weight basis with 4: 6-6: 4 ratio mixes.
If the content of metacresol in the cresols novolac resin surpasses above-mentioned scope, then film speed is accelerated and residual film ratio sharply descends, if the content of paracresol surpasses above-mentioned scope, then has the slack-off shortcoming of film speed.
Between the cresols novolac resin can use separately/and the content of paracresol is 4 according to weight basis: 6-6: 4 cresols novolac resin, but more preferably be to mix to use resin inequality.At this moment, the cresols novolac resin is 8 with weight average molecular weight preferably, 000-30,000 cresols novolac resin, with weight average molecular weight be 2,000-8,000 cresols novolac resin, with 7: 3-9: 1 weight ratio is mixed and is used.
The definition of " weight average molecular weight " of the above and the following stated is the polystyrene equivalent value of being measured by GPC.
On the other hand, in the composition of photoresist layer, azo is that the activation of sensing optical activity compound reduces the effect of alkali soluble resins to the dissolution inhibitor of alkali solubility, and is transformed into alkali-soluble substance and activation improves the effect of alkali soluble resins to alkali solubility when irradiates light.As mentioned above according to by the caused solubility change of rayed, the film transfer material of the present invention position of exposing of will developing.
Azo is that the sensing optical activity compound can synthesize through the esterification of polyol and quinone azosulfonic acid compound.About in order to obtain the esterification that azo is the sensing optical activity compound, can in polyol and quinone azosulfonic acid compound, drip after base catalysts such as dioxan, acetone, tetrahydrofuran, MEK, N-Methyl pyrrolidone, chloroform, triethylamine, N-methylmorpholine, N-methyl croak piperazine or 4-dimethylaminopyridine carry out condensation, with products therefrom clean, refining, dry and obtain.
At this moment, example as quinone azosulfonic acid compound can enumerate 1,2-azo group benzoquinones-4-sulfonic acid, 1,2-azo group naphthoquinones-4-sulfonic acid, 1,2-azo group benzoquinones-5-sulfonic acid, 1,2-azo group naphthoquinones-o-quinone azosulfonic acid compounds such as 5-sulfonic acid, and quinone azosulfonic acid compound derivatives in addition etc.
Quinone azosulfonic acid compound itself has the effect that reduces alkali soluble resins dissolution inhibitor of solubleness in alkali.But when exposure is alkali solubility, has the characteristic that promotes that alkali soluble resins dissolves in alkali on the contrary so decompose.
Can enumerate 2,3 as many hydroxy compounds, 4-trihydroxybenzophenone, 2,2 ', 3-trihydroxybenzophenone, 2,3,4 '-trihydroxybenzophenone classes such as trihydroxybenzophenone; 2,3,4,4 '-tetrahydroxybenzophenone, 2,2 ', 4,4 '-tetrahydroxybenzophenone, 2,3,4, tetrahydroxybenzophenone classes such as 5-tetrahydroxybenzophenone; 2,2 ', 3,4,4 '-pentahydroxybenzophenone, 2,2 ', 3,4, pentahydroxybenzophenone classes such as 5-pentahydroxybenzophenone; 2,3,3 ', 4,4 ', 5 '-hexahydroxy benzophenone, 2,2 ', 3,3 ', 4,5 '-hexahydroxy benzophenones such as hexahydroxy benzophenone; Alkyl gallates; Oxygen base flavonoids etc.
By these azos that obtain is the concrete example of sensing optical activity compound, can enumerate from 2,3,4,4 '-tetrahydroxybenzophenone-1,2-azo group naphthoquinones-5-sulphonic acid ester, 2,3,4-trihydroxybenzophenone-1,2-azo group naphthoquinones-5-sulphonic acid ester, (1-[1-(4-hydroxyphenyl) isopropyl]-4-[1, two (4-hydroxyphenyl) ethyls of 1-] benzene)-1, selected more than one in 2-azo group naphthoquinones-5-sulphonic acid ester.
Consider from development and dissolubility aspect, above-mentioned azo be the sensing optical activity compound preferable in the composition of photoresist layer be the 30-80 weight portion with respect to 100 weight portion alkali soluble resinss.
On the other hand, in the film transfer material according to an embodiment of the present invention, the photoresist layer can comprise sensitizer, is in order to improve light sensitivity.As its example, can enumerate from 2,3,4-trihydroxybenzophenone, 2,3,4,4 '-tetrahydroxybenzophenone, 1-[1-(4-hydroxyphenyl) isopropyl]-4-[1, two (4-hydroxyphenyl) ethyls of 1-] selected more than one in the benzene.
When comprising sensitizer,, be favourable from the angle that improves photosensitive effect and window processing procedure nargin if when being the 3-15 weight portion with respect to 100 weight portion alkali soluble resinss.
In addition, the photoresist layer also can comprise other composition or adjuvants such as levelling agent, filling agent, antioxidant.
On the other hand, to contain alkali soluble resins, azo is that the composition of sensing optical activity compound etc. is distributed to and is coated with after forming system liquid in the certain amount of solvent, at this moment, can list from by ethyl acetate as the solvent example, butyl acetate, the ethylene glycol monoethyl ether acetate, diethylene glycol one ethyl ether acetate ester, the propylene glycol monoethyl ether acetate, acetone, MEK, ethanol, methyl alcohol, propyl alcohol, isopropyl alcohol, benzene, toluene, cyclopentanone, cyclohexanone, ethylene glycol, dimethylbenzene, selected more than one in the group that ethylene glycol monoethyl ether and diethylene glycol one ether are formed.
In addition; the method of making film transfer material in foundation an embodiment of the present invention is not particularly limited; see through that will to contain alkali soluble resins and azo be sensing optical activity compound compositions and a certain amount of solvent and be applied on the support film and behind the formation photoresist layer, be coated with diaphragm thereon and make film transfer material.Form about coating on film the photoresist layer liquid making method without limits, cylinder rubbing method, the roller that can list frequent use is coated with method, the mayer rod is coated with rubbing methods such as method (Mayer Rod), heliogravure, spraying process, see through it is applied on the film, carry out drying and make solvent evaporates in the composition, just can form thin layer separately.Also can the composition after the coating be heating and curing as required.
In addition, using photoresist resin film of the present invention to form method of patterning may further comprise the steps: (I) form the dry film photoresist on glass substrate, make the photoresist layer according to the dry film photoresist of manufacturing of the present invention contact, peel off support film at this moment with glass substrate; (II) see through the shielding irradiation or do not see through shielding and the direct irradiation ultraviolet ray on above-mentioned, with the pattern that obtains wanting by overlay film; (III) see through development treatment and remove the photoresist layer of irradiation portion, form the photoresist pattern thus by overlay film.
Above-mentioned steps (I) is to adhere in the mode of the photoresist layer of contact positive type dry film photoresist on substrate and form the step of the resin-coated film of eurymeric photoresist.At this moment, peel off the support film of dry film photoresist, make the photoresist layer be present in the surface.
Foundation needs, and in order to be unlikely to make the photoresist pattern to be washed off by overlay film when developing in step (III), the adhesive force of enhancing and base material needs the thermal treatment processing procedure in the step before or after step (II) as required.Illustrate in greater detail, for example carrying out step (II) before, after forming the resin-coated film of eurymeric photoresist on the base material, peel off support film from the photoresist resin film after, in order to strengthen the adhesive force with base material, can then heat-treat; Perhaps after carrying out step (II) afterwards, peeling off the support film of photoresist resin film,, can heat-treat in order to strengthen the adhesive force with base material; Perhaps also can carry out step (II) afterwards, peel off support film from above-mentioned photoresist resin after, this film of being stripped from is heat-treated the adhesion that strengthens with base material.That is, repeat heat treatment step according to differences such as the complicacy of the requirement of photoresist film, dicyandiamide solution and boiling points variedly.
According to step (I), (II) and (III) form the photoresist pattern wanted thus by overlay film.
Be preferably 2.38% Tetramethylammonium hydroxide (TMAH) in order to the developer solution that positive type dry film photoresist resin film of the present invention is carried out development treatment.
Below, see through embodiment the present invention more specifically is described, but scope of the present invention is not limited to following examples.
Embodiment 1-3 and comparative example 1
Embodiment 1-3 and comparative example 1 all are to make the solution that contains following composition: alkali soluble resins is a cresols novolac resin (CF novolac resin, between/paracresol content is 4: 6 with weight basis, weight average molecular weight 8,000 cresols novolac resin and weight average molecular weight 2, the cresols novolac resin that 000 cresols novolac resin mixes with 7: 3 ratio), and with respect to above-mentioned alkali soluble resins 100 weight portions, contain 34 weight portions as 2 of sensing optical activity compound, 3,4-trihydroxybenzophenone-1,2-azo group naphthoquinones-5-sulphonic acid ester; 3.6 weight portion is as 2,3 of sensitizer, the 4-trihydroxybenzophenone; 165 weight portions are as the MEK of low boiling point solvent; 55 weight portions are as the diethylene glycol one ethyl ether acetate ester of high boiling solvent; 0.5 weight portion is an organic siliconresin as the fluorine of release agent.Then, remove insolubles with Mi Libo (Millipore) the above-mentioned solution of Teflon filter paper filtering of 0.2 μ m.The solution that obtains is coated with into 5 μ m thickness on support film, forms the photoresist resin bed.The diaphragm of laminate thickness 23 μ m produces eurymeric photoresist resin film thereon.
Just, in embodiment 1-3 and comparative example 1, used the support film and the diaphragm of different-thickness as shown in table 1 below and kind.
Table 1
*OPP: orientation polypropylene
*The PET that ILC PET:KOLON company makes uses acrylic compounds binder and acrylic compounds bead to carry out coating in the line (In-line coating, PET ILC) (part of experience ILC is contacted with the photoresist layer).
In addition,, assess first adhesive force and second adhesive force, it be the results are shown in following table 2 for using the situation of support film and diaphragm as mentioned above.
At this moment, first adhesive force is defined as follows: be coated with into thickness by ITO
And width 100 * 100mm
2Glass substrate on, behind the dry film photoresist with the condition lamination manufacturing of speed 2.0m/min, 110 ℃ of temperature, heating roller pressure 10-90psi, from the required power of photoresist pull-up mould support film.Second adhesive force is defined as follows: the dry film photoresist severing of manufacturing is become width 100 * 100mm
2After, from the photoresist layer required power of demoulding diaphragm only.First adhesive force and second adhesive force all are to use UTM (manufacturing of Instron company) value of peel strength when measuring the demoulding.
Table 2
| Embodiment 1 | Embodiment 2 | Embodiment 3 | Comparative example 1 | |
| First adhesive force | ??0.0587 | ??0.0688 | ??0.0688 | ??0.1175 |
| Second adhesive force | ??0.0541 | ??0.0657 | ??0.0541 | ??0.1092 |
The test example
For resulting film transfer material in the foregoing description and comparative example, form tellite in accordance with the following methods, and carry out following rerum natura assessment.
(1) whether photoresist layer residue is arranged
Whether residue is arranged on the support film: measure UV transmitance under the 355nm for each support film shown in the above-mentioned table 1 that in the foregoing description and comparative example, uses, with it as " the initial stage UV transmitance of support film ".
In addition, will comprise each support film produces shown in the above-mentioned table 1 the foregoing description and each eurymeric photoresist film of comparative example, be coated with into thickness by ITO
And width 100 * 100mm
2Glass substrate on, after carrying out lamination with the condition of speed 2.0m/min, 110 ℃ of temperature, heating roller pressure 10-90psi, behind photoresist pull-up mould support film, this support film is measured UV transmitance under the 355nm, with it as " UV transmitance after the demoulding of support film ".
UV transmitance after the initial stage UV transmitance that obtains separately of contrast and the demoulding is when rate of change is 1% to be evaluated as the residue that support film occurred when above.At this moment, the device of measuring the UV transmitance uses day UV-3101PC ultraviolet-visible-near infrared spectrometer of island proper Tianjin company.
Whether residue is arranged on the diaphragm: measure UV transmitance under the 355nm for each diaphragm shown in the employed above-mentioned table 1 in the foregoing description and comparative example, with it as " the initial stage UV transmitance of diaphragm ".
In addition, will comprise each diaphragm produces shown in the above-mentioned table 1 the foregoing description and each eurymeric photoresist film of comparative example, severing becomes width 100 * 100mm
2After, behind photoresist pull-up mould diaphragm, then the diaphragm after the demoulding is measured UV transmitance under the 355nm, with it as " UV transmitance after the demoulding of diaphragm ".
UV transmitance after the initial stage UV transmitance that obtains separately of contrast and the demoulding is when rate of change is 1% to be evaluated as the residue that diaphragm occurred when above.At this moment, the device of measuring the UV transmitance uses day UV-3101PC ultraviolet-visible-near infrared spectrometer of island proper Tianjin company.
Assess the result whether residue is arranged as mentioned above in following table 3 expressions.
(2) pattern rerum natura
Light sensitivity assessment: be coated with into thickness by ITO
And width 100 * 100mm
2Glass substrate on, behind each film transfer material with the condition lamination manufacturing of speed 2.0m/min, 110 ℃ of temperature, heating roller pressure 10-90psi, peel off support film, carry out preliminary drying at 100 ℃.
Then, with the contact exposure machine according to the exposure of different exposures after, in 2.38 weight %TMAH aqueous solution, develop 60 seconds (but the situation of embodiment 1-3 for develop 64 seconds) at normal temperature, wash after 30 seconds dryly, measure formation line/be spaced apart 1/1 the required exposure of fine pattern then.At this moment, the size of fine pattern is to see through optical microscope to observe.
Intelligibility evaluation: so, unexposed portion will be residual and form circuit, with the electron microscope observation sharpness of this moment.
Result in the above-mentioned assessment of following table 3 expressions.
Table 3
*In comparative example, when the demoulding diaphragm residue has taken place and can't measure.
*When in comparative example, making film transfer material, do not use diaphragm and on support film coating photoresist and dry back implement the result of lamination at once, residue has taken place during the support film demoulding, cause and can't measure.
Can learn from the said determination result, irrelevant with the kind of diaphragm and support film, as long as select the film of knockout press, then when utilizing film transfer material to form pattern, can not have influence on physical property at proper level.
Claims (11)
1. a film transfer material is characterized in that, comprises support film, photolysis photoresist layer and diaphragm,
As following defined first adhesive force is 0.1kg/100 * 100mm
2Below, second adhesive force is 0.1kg/100 * 100mm
2Below, and second adhesive force has the value less than first adhesive force, first adhesive force: in that (indium tin oxide ITO) is coated with into thickness by indium tin oxide
And width 100 * 100mm
2Glass substrate on, behind the condition laminated thin membrane type transfer materials with speed 2.0m/min, 110 ℃ of temperature, heating roller pressure 10-90psi, from the required power of photolysis photoresist pull-up mould support film,
Second adhesive force: the film transfer material severing is become width 100 * 100mm
2After, from the photolysis photoresist layer required power of demoulding diaphragm only.
2. film transfer material as claimed in claim 1 is characterized in that, first adhesive force is 0.05kg/100 * 100mm
2To 0.07kg/100 * 100mm
2, second adhesive force is 0.05kg/100 * 100mm
2To 0.07kg/100 * 100mm
2
3. film transfer material as claimed in claim 1 or 2 is characterized in that, photolysis photoresist layer comprises that alkali soluble resins and azo are the sensing optical activity compound.
4. film transfer material as claimed in claim 3 is characterized in that alkali soluble resins is a novolac resin.
5. film transfer material as claimed in claim 4 is characterized in that, alkali soluble resins is the cresols novolac resin.
6. film transfer material as claimed in claim 5 is characterized in that, (gel permeation chromatography, GPC) weight average molecular weight of Ce Dinging is 2 to the cresols novolac resin, 000-30,000 by gel permeation chromatography.
7. film transfer material as claimed in claim 5 is characterized in that, the cresols novolac resin be between/content of paracresol is with 4: 6-6: the resin that 4 weight basis ratio is mixed.
8. film transfer material as claimed in claim 5, it is characterized in that, the cresols novolac resin is that the weight average molecular weight of being measured by GPC is 8,000-30,000 cresols novolac resin, with the weight average molecular weight of measuring by GPC be 2,000-8,000 cresols novolac resin is with 7: 3-9: the resin that 1 weight ratio is mixed.
9. film transfer material as claimed in claim 3, it is characterized in that azo is that the sensing optical activity compound is from 2,3,4,4 '-tetrahydroxybenzophenone-1,2-azo group naphthoquinones-5-sulphonic acid ester, 2,3,4-trihydroxybenzophenone-1,2-azo group naphthoquinones-5-sulphonic acid ester, (1-[1-(4-hydroxyphenyl) isopropyl]-4-[1, two (4-hydroxyphenyl) ethyls of 1-] benzene)-1, selected more than one in 2-azo group naphthoquinones-5-sulphonic acid ester.
10. film transfer material as claimed in claim 3, it is characterized in that, photolysis photoresist layer comprises from 2,3,4-trihydroxybenzophenone, 2,3,4,4 '-tetrahydroxybenzophenone, 1-[1-(4-hydroxyphenyl) isopropyl]-4-[1, two (4-hydroxyphenyl) ethyls of 1-] sensitizer of selected more than one in the benzene.
11. film transfer material as claimed in claim 1 is characterized in that, the thickness of diaphragm is 15-30 μ m.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080067931 | 2008-07-14 | ||
| KR1020080067931A KR20100007332A (en) | 2008-07-14 | 2008-07-14 | Film type transfer material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101630125A true CN101630125A (en) | 2010-01-20 |
Family
ID=41575269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910158106A Pending CN101630125A (en) | 2008-07-14 | 2009-07-13 | Film transfer material |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2010020321A (en) |
| KR (1) | KR20100007332A (en) |
| CN (1) | CN101630125A (en) |
| TW (1) | TW201003768A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102781680A (en) * | 2010-03-30 | 2012-11-14 | 株式会社凸版Tdk标签 | Transfer film for baking purposes, and process for production of glass plate involving baked material |
| CN103842909A (en) * | 2011-09-30 | 2014-06-04 | 可隆工业株式会社 | Positive-type photosensitive resin composition, and insulating film and OLED formed using the same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5741179B2 (en) * | 2011-04-20 | 2015-07-01 | 日立化成株式会社 | Photosensitive film |
| WO2018070489A1 (en) * | 2016-10-14 | 2018-04-19 | 日立化成株式会社 | Photosensitive element, semiconductor device, and resist pattern formation method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080166659A1 (en) * | 2005-02-02 | 2008-07-10 | Byoung-Kee Kim | Positive Dry Film Photoresist and Composition For Preparing the Same |
-
2008
- 2008-07-14 KR KR1020080067931A patent/KR20100007332A/en not_active Application Discontinuation
-
2009
- 2009-07-09 TW TW098123263A patent/TW201003768A/en unknown
- 2009-07-13 CN CN200910158106A patent/CN101630125A/en active Pending
- 2009-07-13 JP JP2009165069A patent/JP2010020321A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102781680A (en) * | 2010-03-30 | 2012-11-14 | 株式会社凸版Tdk标签 | Transfer film for baking purposes, and process for production of glass plate involving baked material |
| CN103842909A (en) * | 2011-09-30 | 2014-06-04 | 可隆工业株式会社 | Positive-type photosensitive resin composition, and insulating film and OLED formed using the same |
| US9921476B2 (en) | 2011-09-30 | 2018-03-20 | Kolon Industries, Inc. | Positive-type photosensitive resin composition, and insulating film and OLED formed using the same |
| CN103842909B (en) * | 2011-09-30 | 2019-03-22 | 可隆工业株式会社 | Conformal photosensitive resin composition and the insulating film and OLED formed using the composition |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20100007332A (en) | 2010-01-22 |
| TW201003768A (en) | 2010-01-16 |
| JP2010020321A (en) | 2010-01-28 |
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