CN101625953A - Substrate holder - Google Patents
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- CN101625953A CN101625953A CN200910150087A CN200910150087A CN101625953A CN 101625953 A CN101625953 A CN 101625953A CN 200910150087 A CN200910150087 A CN 200910150087A CN 200910150087 A CN200910150087 A CN 200910150087A CN 101625953 A CN101625953 A CN 101625953A
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Abstract
A substrate holder which has an electrostatic chuck on a substrate holding side of a holder main body and electrostatically adsorbs a substrate includes: a heating unit which is built in the electrostatic chuck and heats the substrate; a circulation medium distribution path which is formed inside the holder main body and connected to a circulation medium supplying unit which circulates and supplies a circulation medium; a heat transference varying unit which is formed by sealing a heat transfer gas in a gap between the holder main body and the electrostatic chuck and connected to a heat transfer gas supply system which can control a sealing pressure; and a gas sealing unit which is formed by sealing a heat transfer gas in a gap between the electrostatic chuck and the substrate and connected to the heating transfer gas supply system.
Description
Technical field
The present invention relates to a kind of in the vacuum tank of plasma treatment appts by Electrostatic Absorption keep substrate, and can control basal plate the base plate keeping device of temperature.
Background technology
In the vacuum tank of plasma treatment devices such as sputter equipment, Etaching device, be provided with the base plate keeping device (substrate supporting device) that is used to keep substrate (wafer), temperature that usually can control basal plate.
For example, propose that a kind of like this substrate supporting device is arranged: it comprises base component and the electrostatic chuck that is built-in with heater or cooler, and this electrostatic chuck keeps at an upper portion thereof (with reference to patent documentation 1) with thin slice with wafer absorption across conducting heat.On base component, be provided with and be used to import the gas that conducts heat with gas and import path, be formed with in the upper surface part of base component and import path with this gas and be connected and make and conduct heat with the static groove of using of the static gas of gas.Supply to gas with gas static with in the groove time will conducting heat, and produce the thermal coupling (with reference to patent documentation 1) of conducting heat with gas in the noncontact part between base component and electrostatic chuck.
In addition, proposition has a kind of wafer-process device, it has base plate keeping device, this base plate keeping device has heater function and electrostatic chuck function, this wafer-process device by the rubber-like heat conduction component will be on base plate keeping device the heat input of wafer be delivered to water collar (with reference to patent documentation 2 and 3).
In addition, a kind of Etaching device (with reference to patent documentation 4) that comprises heating arrangements and cooling body on base plate keeping device has also been proposed.In this Etaching device, control, made before etching begins in order to make substrate temperature reach technological temperature heated substrates holding device in advance, when etching begins or after the beginning, stop to move and switch to the heating that utilizes plasma to carry out, utilize these both sides of heating and cooling of plasma to make thermal equilibrium temperature reach technological temperature.
And, proposed a kind of plasma treatment appts, it is pressed against supply high frequency voltage (with reference to patent documentation 5) under the state at the back side of mounting table in the inboard that heater is built in the mounting table that can produce Electrostatic Absorption power, with bottom coolant jacket and heat conductivity sheet members.
The look-ahead technique document
Patent documentation 1: TOHKEMY 2001-110883 communique
Patent documentation 2: TOHKEMY 2004-088063 communique
Patent documentation 3: TOHKEMY 2004-087869 communique
Patent documentation 4: Japanese kokai publication hei 10-303185 communique
Patent documentation 5: TOHKEMY 2000-299288 communique
But, in the technology of patent documentation 1, between base component and the electrostatic chuck, be communicated with between electrostatic chuck and the wafer, import the heat-conducting gas in common feed source (feed system).Thereby, control thermal transfer gas independently, thus the temperature of wafer determines once according to temperature controlled condition.For example under the situation of control wafer temperature under 200～500 ℃ the high temperature, because by variation, the heater of base component or the heating or the heat extraction of cooler of the heat energy of plasma input, make gross energy be difficult to control and the temperature instability of wafer.Thereby, under the situation about in this temperature range, using, do not use heat-conducting gas.
In addition, about between base component and the electrostatic chuck and the static groove of using of the gas between electrostatic chuck and the wafer, the pressure of a regulation refrigerating gas is 1～30Torr.Thereby the variation of the plasma input heat energy that causes for the change because of process conditions be difficult to come the control thermal transfer rate by the pressure of adjusting heat-conducting gas, thereby wafer temperature is controlled relatively poor.
In the technology of patent documentation 2, for substrate temperature is controlled to design temperature, adopting conductive coefficient is that the member of 0.3～1W/K is as the heat conduction component between base plate keeping device and the coolant jacket.For example, disclosing in the coolant jacket temperature in the document is 50 ℃, when the temperature of base plate keeping device is 200～500 ℃, can control the heat input variable of 307W～1168W.Adopt this control method, can under stable state, control above-mentioned heat input, but produce on transient state ground under the environment of heat input of plasma etc., because the conductive coefficient of heat transfer member is little of 0.3～1W/K, so the temperature of substrate temporarily rises to 2 times near design temperature.In addition, till stably being controlled to design temperature, need the time more than 10 seconds.
In addition, in this temperature-controlled process, there are the following problems: change the processing performance that can't obtain to expect because of substrate temperature in process treatment process.According to the ability to the heat of base plate keeping device input of discharging by coolant jacket is that the pyroconductivity of base plate keeping device and coolant jacket is stipulated this temperature control performance.Thereby, because the conductive coefficient 0.3～1W/K of heat conduction component is to the heat removal capacity control rate, so the control response of design temperature is fine under heat input stable status.But, be under the environment of transient state in the heat input, because pyroconductivity is very little, so control response is relatively poor, and the heat when PROCESS FOR TREATMENT begins is input as under the state of transient state, and substrate temperature changes.
Thereby, for base plate keeping device at the state of the heat input that does not have plasma etc. or transient state real estate from birth under any one state in the state of the heat input of plasma etc., state that the heat input stably produces, with interior substrate temperature was controlled to be design temperature ± 10 ℃ at 10 seconds, and, must have the function of the pyroconductivity between can changing from the base plate keeping device to the water collar at the circulating water temperature that uses water collar below 100 ℃.
It is in the processing below 200 ℃, not imagine the substrate temperature under 200～500 ℃ the temperature conditions is controlled that the technology of patent documentation 3 is used in technological temperature.At this point, in patent documentation 4 and patent documentation 5, adopted the circulatory mediator that has the design temperature that substrate temperature can be controlled to be 200～500 ℃, uses by heat exchange to carry out the base plate keeping device of the mechanism of heat exchange.Because the circulation medium of this kind base plate keeping device is an oiliness, therefore when safeguarding, pollute because of generations such as revealing, adhere to easily, be unfavorable for the operation in the clean room.Mostly this coolant (circulatory mediator) is to have the material of the characteristic of ignition quality, during use, the risk on the safety of clean room is arranged.
Summary of the invention
The present invention makes in view of the above problems, purpose be to provide a kind of heat rejection function that makes the heat input that the coolant that does not have ignition quality has article on plasma body etc. and can be in 200～500 ℃ temperature range the base plate keeping device of control basal plate temperature at a high speed and accurately.
The structure of making in order to achieve the above object of the present invention is as described below.
A kind of base plate keeping device promptly,, its substrate in the holding device main body keeps side to have electrostatic chuck, be used for substrate is carried out Electrostatic Absorption, it is characterized in that, this base plate keeping device comprises heater block, circulatory mediator circulation path, heat transmission energy units of variance and gas packaged unit; Above-mentioned heater block is built in the above-mentioned electrostatic chuck, is used for heated substrates; Above-mentioned circulatory mediator circulation path is formed on the inside of above-mentioned holding device main body, and the circulatory mediator supply part of supplying with circulatory mediator is connected with being used to circulate; The transmission of above-mentioned heat can units of variance be enclosed in heat-conducting gas in the gap of above-mentioned holding device main body and above-mentioned electrostatic chuck and forms, and is connected with the heat-conducting gas feed system that can adjust confining pressure; The above-mentioned gas packaged unit is enclosed in heat-conducting gas in the gap of above-mentioned electrostatic chuck and aforesaid substrate and forms, and is connected with the heat-conducting gas feed system.
In addition, the invention provides a kind of base plate keeping device, its substrate in the holding device main body keeps side to have electrostatic chuck, is used for substrate is carried out Electrostatic Absorption, it is characterized in that this base plate keeping device comprises heater block, circulatory mediator circulation path and heat transmission energy units of variance; Above-mentioned heater block is built in the above-mentioned electrostatic chuck, is used to heat aforesaid substrate; Above-mentioned circulatory mediator circulation path is formed on the inside of above-mentioned holding device main body, and the circulatory mediator supply part of supplying with circulatory mediator is connected with being used to circulate; The transmission of above-mentioned heat can units of variance be divided the top of the above-mentioned circulatory mediator circulation path of the inside that is formed on above-mentioned holding device main body as the enclosure space of heat-conducting gas, and is connected with the heat-conducting gas feed system that can adjust confining pressure.
Adopt the present invention, have heat and transmit the energy units of variance, this heat transmission energy units of variance can the control thermal transfer rate by the pressure of adjusting heat-conducting gas.Thereby, can be in 200～500 ℃ temperature range control basal plate temperature at a high speed and accurately.
In addition, the thermal heat transfer capability of utilizing the gas sealing to form of transmitting the energy units of variance owing to heat is variable, therefore can use coolant below 200 ℃ about.Thereby, the function that heat extraction is carried out in the heat input that can make the coolant that does not have ignition quality have article on plasma body etc.
Description of drawings
Fig. 1 is the schematic diagram of the 1st execution mode of expression base plate keeping device of the present invention.
Fig. 2 is the key diagram that the relation of utilization and variations in temperature is in the past represented the variations in temperature of base plate keeping device of the present invention.
Fig. 3 is the schematic diagram of the base plate keeping device of expression the 2nd execution mode.
Fig. 4 is the cutaway view of the cross-sectional configurations that the heat transmission of expression the 2nd execution mode can units of variance.
Fig. 5 is the schematic diagram of the 3rd execution mode of expression base plate keeping device of the present invention.
Fig. 6 is the schematic diagram of the base plate keeping device of expression the 4th execution mode.
Embodiment
Below, with reference to the description of drawings embodiments of the present invention, but the present invention is not limited to present embodiment.
The 1st execution mode
Fig. 1 is the schematic diagram of the 1st execution mode of expression base plate keeping device of the present invention.Fig. 2 is the key diagram that the relation of utilization and variations in temperature is in the past represented the variations in temperature of base plate keeping device of the present invention.
As shown in Figure 1, the base plate keeping device 1 of the 1st execution mode is located in the vacuum tank (not shown) as the plasma treatment appts of the representative device of sputter equipment.This base plate keeping device 1 remains on the substrate that is disposed at holding device main body 1A by Electrostatic Absorption with substrate 10 and keeps on the electrostatic chuck 3 of side (top).
Holding device main body 1A for example is the discoideus or columned supporting member that semiconductor crystal wafer is supported as substrate 10.Internal separation at holding device main body 1A is formed with the circulatory mediator circulation path 100 that flows for circulatory mediator (coolant) 101.The circulatory mediator supply part 2 of supplying with circulatory mediator 101 that is used to circulate is connected with this circulatory mediator circulation path 100, by circulatory mediator 101 is circulated in circulatory mediator circulation path 100, make holding device main body 1A have hot-swap feature and heat rejection function.In the present embodiment, adopting the central cooler that follows that has temperaturecontrol sensor 2A is circulatory mediator supply part 2, can be controlled to be about temperature (particularly, 100～250 ℃ temperature) below 200 ℃ with following central cooler 2.As circulatory mediator 101, for example can adopt fluorine class medium or be mixed with the cooling water or the pure water of ethylene glycol.
In the gap of holding device main body 1A and electrostatic chuck 3, be formed with heat and transmit energy units of variance 6, this heat transmission can units of variance 6 be enclosed in heat-conducting gas (confining gas) 103 in the gap between holding device main body 1A and the electrostatic chuck 3, and is connected with the heat-conducting gas feed system 110 that can adjust confining pressure.Around the heat transmission energy units of variance 6 that is divided the gap between holding device main body 1A and electrostatic chuck 3, dispose the heat insulating component 7 of ring-type.As heat insulating component 7, for example can enumerate the coefficient of overall heat transmission such as aluminium oxide, stainless steel at 25W/m
2The material that K is following, but more preferably utilize the coefficients of overall heat transmission such as zirconia, quartz less than 10W/m
2The material of K forms heat insulating component 7.This heat insulating component 7 pairs of holding device main bodys 1A and electrostatic chuck 3 carry out heat insulation, can pass through to adjust the gas confining pressure and the control thermal transfer rate.
Can units of variance 6 form according to the mean free path of employed gas, with the heat transmission and can make Knudsen number (Knudsen number) (Ku=λ/L λ (m): the mean free path L of molecule (m): represent length) be gap size, changing the coefficient of overall heat transmission by the adjustment gas pressure greater than 1 value.Why Knudsen number being formed than 1 big a lot of value, is because can ignore intermolecular collision this moment, and fluid is handled as non-individual body.
As heat-conducting gas, can use for example argon gas (Ar), helium (He) or nitrogen (N
2) wait inert gas.When under the substrate design temperature is 450 ℃ condition, adopting Ar, He, gap between base plate keeping device 1A and the electrostatic chuck 3 is set at 0.15～0.5mm, confining pressure is made as 100Pa, 1000Pa, thereby can shown in following table 1, changes the coefficient of overall heat transmission like that.The heat extraction of the circulatory mediator 101 that imported 12 o'clock etc. at the heat that does not have plasma 11 grades, desire reduces base plate keeping device 1A can the time, confining pressure is formed 0Pa and makes coefficient of overall heat transmission minimum.
Table 1
| Ar gas | ??100Pa | ??1000Pa |
| Gas closing gap 0.15mm | ??10W/m 2·K | ??100W/m 2·K |
| He gas | ??100Pa | ??1000Pa |
| Gas closing gap 0.5mm | ??240W/m 2·K | ??2400W/m 2·K |
In addition, also be formed with gas packaged unit 8 in the gap between electrostatic chuck 3 and substrate 10, in the gap that this gas packaged unit 8 is enclosed in heat-conducting gas (substrate back gas) 102 between electrostatic chuck 3 and the substrate 10, and be connected with heat-conducting gas feed system 120.Gas packaged unit 8 is used for the gas sealing is carried out at the back side of substrate 10, and carries out the heat transmission of substrate 10 and electrostatic chuck 3.As heat-conducting gas, can use for example argon gas (Ar), helium (He) or nitrogen (N as mentioned above equally
2) wait inert gas.
In the present embodiment, the heat-conducting gas feed system 110 that is used for thermotropism transmission energy units of variance 6 supply heat-conducting gases forms different systems with the heat-conducting gas feed system 120 that is used for to gas packaged unit 8 is supplied with heat-conducting gases, can distinguish controlled pressure independently.For example, both can transmit in the energy units of variance 6, He is enclosed in gas packaged unit 8 medium modes and both can have used different heat-conducting gases in two heat-conducting gas feed systems, also can use identical heat-conducting gas by Ar being enclosed in heat.
Adopt said structure, can pass to holding device main body 1A by units of variance 6 via gas packaged unit 8, electrostatic chuck 3 and heat transmission to the input heat energy of substrate 10.In holding device main body 1A, will import heat energy and conduct heat, through following central cooler 2 heat extractions to circulatory mediator 101.
Particularly, be that the heat to substrate 10 when PROCESS FOR TREATMENT is input as about 1000W in the sputter equipment, Etaching device of the substrate 10 of 300mm adopting diameter.When heat was input as this value, the electrostatic chuck 3 that is controlled so as to 450 ℃ was about 100～1kPa with substrate back gas (Ar or He) 102 sealings.The substrate 10 of this moment is controlled so as to 100～500W/m with the coefficient of overall heat transmission of electrostatic chuck 3
2K.Between electrostatic chuck 3 and holding device main body 1A, utilize heat to transmit the pressure of energy units of variance 6 control confining gases (He or Ar) 103, the coefficient of overall heat transmission is changed over 10～8000W/m
2K conducts heat and gives holding device main body 1A.In holding device main body 1A, utilize coolant 101 to carry out heat extraction.
Promptly, utilize transient state ground such as plasma to apply under the state of heat input at the heat transmission structure that adopts the gas sealing, by the adjustment confining pressure coefficient of overall heat transmission is controlled to be 10～8000W/m
2K.Thus, can be in the change with interior design temperature with 200～500 ℃ in 10 seconds be controlled at design temperature ± 10 ℃.In addition, stably producing under the situation of heat input,, also the change of 200～500 ℃ design temperature can be controlled in design temperature ± 10 ℃ by in the scope of the above-mentioned coefficient of overall heat transmission, controlling.
Transmit energy units of variance 6 by heat is set,, also can conduct heat efficiently to holding device main body 1A side though substrate 10 is heated up efficiently by the heater 4 of electrostatic chuck 3.In addition, the thermal heat transfer capability of utilizing the gas sealing to form of transmitting energy units of variance 6 owing to heat is variable, therefore can be controlled at about circulatory mediator 101 that uses below 200 ℃.Thereby, can adopt employed in the past medium, for example perfluor triamylamine (Fluorinert), the PFPE fluorine class media such as (Galden) that does not have ignition quality as circulatory mediator 101.
Like this, the pressure by heat transmission energy units of variance 6 control confining gases can change the coefficient of overall heat transmission.Thereby, need not to carry out the change of the member between electrostatic chuck 3 and the holding device main body 1A, institutional adjustment, just circulatory mediator 101 can be formed and below 200 ℃, in 200～500 ℃ scope electrostatic chuck 3 be carried out temperature control approximately.
Adopt the base plate keeping device of the 1st execution mode, as shown in Figure 2, in 200～500 ℃ scope in the design temperature scope, just can units of variance 6 adjust the pressure of confining gases and the control thermal transfer rate by heat transmission, just can high speed (in 10 seconds) and high accuracy control basal plate temperature (in ± 10 ℃).At this moment, can utilize non-oiliness, not have the circulatory mediator 101 of ignition quality to realize the heat rejection function of the heat input of article on plasma bodies etc., thereby need not to carry out the change of member, institutional adjustment etc. to holding device main body 1A from electrostatic chuck 3.
In addition, even as the heat transmission can units of variance 6 electrostatic chuck 3 and the gap between the holding device main body 1A at electrostatic chuck 3 and holding device main body 1A because of the thermal characteristics difference of each material has produced during thermal deformation such as crooked, also can absorb distortion, utilize gas transfer to guarantee the stable coefficient of overall heat transmission.
In addition in the present embodiment, owing to only utilize heat insulating component 7 sealings around the heat transmission energy units of variance 6, so when changing electrostatic chuck 3 according to the serviceability temperature condition, when exchanging by maintenance, compare with the situation of using heat transfer material such as indium, also carry out operation easily.
The 2nd execution mode
Fig. 3 is the schematic diagram of the base plate keeping device of expression the 2nd execution mode.Fig. 4 is the cutaway view that expression heat is transmitted the cross-sectional configurations of energy units of variance.Describe for the identical Reference numeral of member mark identical with the 1st execution mode.
The base plate keeping device 21 of the 2nd execution mode be and the base plate keeping device of the 1st execution mode same size in changed the heat transmission energy units of variance of dividing in the gap that is formed between holding device main body 1A and the electrostatic chuck 36 structure form.
Promptly, the heat transmission in the 2nd execution mode can units of variance 6 with the 1st plate body 16 with the 17 relative configurations of the 2nd plate body and division formation, the 1st plate body 16 and the 2nd plate body 17 have respectively holds up circular-arc fin 16A, the 17A that forms on opposite face.The fin 16A of above-mentioned the 1st plate body 16 disposes the vertical section shape shape in wave shape in space with fin 17A staggered being adjacent under the state of relative configuration of the 2nd plate body 17.
The 2nd execution mode plays the action effect identical with the 1st execution mode basically, particularly adopts the 2nd execution mode, utilizes fin 16A, 17A the internal structure of heat transmission energy units of variance 6 to be formed the spatial configuration of wave mode.Thereby, play the hot translational speed that can increase between heat transfer area, raising holding device main body and confining gas, further these controlled distinctive effects that improve the heat transfer that obtains by the adjustment confining pressure.
The 3rd execution mode
Fig. 5 is the schematic diagram of the 3rd execution mode of expression base plate keeping device of the present invention.Fig. 2 is the key diagram that the relation of utilization and variations in temperature is in the past represented the variations in temperature of base plate keeping device of the present invention.
As shown in Figure 5, the base plate keeping device 1 of the 3rd execution mode is located at being in the vacuum tank (not shown) of the plasma treatment appts of representative as sputter equipment.This base plate keeping device 1 remains on the substrate that is disposed at holding device main body 1A by Electrostatic Absorption with substrate 10 and keeps on the electrostatic chuck 3 of side (top).
Holding device main body 1A for example is the discoideus or columned supporting member that semiconductor crystal wafer is supported as substrate 10.In holding device main body 1A, divide and be formed with the circulatory mediator circulation path 100 that flows for circulatory mediator (coolant) 101.The circulatory mediator supply part 2 of supplying with coolant 101 that is used to circulate is connected with this coolant circulation path 100, by circulatory mediator 101 is circulated in circulatory mediator circulation path 100, make holding device main body 1A have hot-swap feature and heat rejection function.In the present embodiment, adopt have a temperaturecontrol sensor 2A follow central cooler as circulatory mediator supply part 2, can be controlled to be about temperature (particularly, 100～250 ℃ temperature) below 200 ℃ with following central cooler 2.As circulatory mediator 101, for example can adopt fluorine class medium or be mixed with the cooling water or the pure water of ethylene glycol.
Divide as the enclosure space of heat-conducting gas (confining gas) 103 on the top of the circulatory mediator circulation path 100 of the inside of holding device main body 1A be formed with heat transmission can units of variance 6, heat transmission can be connected with the heat-conducting gas feed system 110 that can adjust confining pressure by units of variance 6.Divided by the heat insulating component 7 of ring-type around this heat transmission energy units of variance 6.As heat insulating component 7, for example can enumerating, the coefficient of overall heat transmission such as aluminium oxide, stainless steel is 25W/m
2The material that K is following, but more preferably utilize the coefficients of overall heat transmission such as zirconia, quartz less than 10W/m
2The material of K forms heat insulating component 7.The top of 7 pairs of holding device main bodys of this heat insulating component 1A and bottom are carried out heat insulation, can come the control thermal transfer rate by adjusting the gas confining pressure.
Can units of variance 6 form according to the mean free path of employed gas, with the heat transmission and can make Knudsen number (Ku=λ/L λ (m): the mean free path L of molecule (m): represent length) be gap size, changing the coefficient of overall heat transmission by the adjustment gas pressure greater than 1 value.Why Knudsen number being made as than 1 big a lot of value, is because can ignore intermolecular collision this moment, and fluid is handled as non-individual body.
As heat-conducting gas, can use for example argon gas (Ar), helium (He) or nitrogen (N
2) wait inert gas.When adopting Ar, He under the substrate design temperature is 450 ℃ condition, gap (at interval) that can units of variance 6 with the heat transmission is set at 0.15～0.5mm, confining pressure is formed 100Pa, 1000Pa, thereby can change the coefficient of overall heat transmission like that shown in following table 2.Under the heat that does not have plasma 11 grades such as imported at 12 o'clock at situation, desire reduce base plate keeping device 1A circulatory mediator 101 heat extraction can the time, confining pressure is formed 0Pa and makes coefficient of overall heat transmission minimum.
Table 2
| Ar gas | ??100Pa | ??1000Pa |
| Gas closing gap 0.15mm | ??10W/m 2·K | ??100W/m 2·K |
| He gas | ??100Pa | ??1000Pa |
| Gas closing gap 0.5mm | ??240W/m 2·K | ??2400W/m 2·K |
Between holding device main body 1A and electrostatic chuck 3, be folded with the heat transfer member 5 of sheet.Heat transfer member 5 by the coefficient of overall heat transmission at 10～200W/m
2Material in the scope of K forms, and for example is made of carbon plate or aluminium nitride wafer etc.
Also be formed with the gas packaged unit 8 of heat-conducting gas (substrate back gas) 102 in the gap of electrostatic chuck 3 and substrate 10, this gas packaged unit 8 is connected with heat-conducting gas feed system 120.This gas packaged unit 8 is used for the gas sealing is carried out at the back side of substrate 10, and carries out the heat transmission between substrate 10 and the electrostatic chuck 3.As heat-conducting gas, can use for example argon gas (Ar), helium (He) or nitrogen (N as mentioned above equally
2) wait inert gas.
In the present embodiment, the heat-conducting gas feed system 110 that is used for thermotropism transmission energy units of variance 6 supply heat-conducting gases forms different systems with the heat-conducting gas feed system 120 that is used for to gas packaged unit 8 is supplied with heat-conducting gases, can distinguish controlled pressure independently.For example, both can transmit in the energy units of variance 6, He is enclosed in gas packaged unit 8 medium modes and both can have used different heat-conducting gases in two heat-conducting gas feed systems, also can use identical heat-conducting gas by Ar being enclosed in heat.
Adopt said structure, pass to holding device main body 1A via gas packaged unit 8, electrostatic chuck 3 and heat transfer component 5 to the input heat energy of substrate 10.In holding device main body 1A, utilize heat to transmit the confining pressure of energy units of variance 6 control thermal transfer gases, the heat input is passed in the circulatory mediator 101 of the circulatory mediator circulation path 100 that circulates in the bottom of holding device main body 1A, carry out heat extraction by following central cooler 2.
Particularly, be that the heat to substrate 10 when PROCESS FOR TREATMENT is input as about 1000W in the sputter equipment, Etaching device of the substrate 10 of 300mm adopting diameter.When heat was input as this value, the electrostatic chuck 3 that is controlled so as to 450 ℃ was about 100～1kPa with substrate back gas (Ar or He) 102 sealings.The substrate 10 of this moment is controlled so as to 100～500W/m with the coefficient of overall heat transmission of electrostatic chuck 3
2K.Between electrostatic chuck 3 and holding device main body 1A, adopting aluminium nitride wafer and carbon plate etc. is 10～200W/m as the coefficient of overall heat transmission
2The heat transfer member 5 of K and conducting heat.In holding device main body 1A, utilize heat to transmit the pressure of energy units of variance 6 control confining gases (He or Ar) 103, the coefficient of overall heat transmission is changed over 10～8000W/m
2K conducts heat and carry out heat extraction to the circulatory mediator 101 that circulates in holding device main body 1A.
Promptly, utilize transient state ground such as plasma to apply under the state of heat input at the heat transmission structure that adopts the gas sealing, by the adjustment confining pressure coefficient of overall heat transmission is controlled to be 10～8000W/m
2K.Thus, can be in the change with interior design temperature with 200～500 ℃ in 10 seconds be controlled at design temperature ± 10 ℃.In addition, stably producing under the situation of heat input,, also the change of 200～500 ℃ design temperature can be controlled in design temperature ± 10 ℃ by in the scope of the above-mentioned coefficient of overall heat transmission, controlling.
Transmit energy units of variance 6 by heat is set, substrate 10 is heated up efficiently by the heater 4 of electrostatic chuck 3, and can transmit heat efficiently to the circulatory mediator 101 in the circulation of the bottom of holding device main body 1A.In addition, the thermal heat transfer capability of utilizing the gas sealing to form of transmitting energy units of variance 6 owing to heat is variable, therefore can control, and making can be at about circulatory mediator 101 that uses below 200 ℃.Thereby, can adopt fluorine class media such as the employed in the past medium that does not have an ignition quality, for example perfluor triamylamine, PFPE as circulatory mediator 101.
Like this, the pressure by heat transmission energy units of variance 6 control confining gases can change the coefficient of overall heat transmission.Thereby, need not to carry out the change of the member between electrostatic chuck 3 and the holding device main body 1A, institutional adjustment, just circulatory mediator 101 can be formed and below 200 ℃, in 200～500 ℃ scope electrostatic chuck 3 be carried out temperature control approximately.
Adopt the base plate keeping device 1 of the 3rd execution mode, as shown in Figure 2, in 200～500 ℃ scope in the design temperature scope, just the pressure of can units of variance 6 adjusting confining gases by the heat transmission comes the control thermal transfer rate, just can high speed (in 10 seconds) and high accuracy control basal plate temperature (in ± 10 ℃).At this moment, can utilize non-oiliness, not have the heat rejection function of heat input of article on plasma body etc. of the circulatory mediator 101 of ignition quality, thereby need not to carry out the change of member, institutional adjustment etc. to holding device main body 1A from electrostatic chuck 3.
In addition, even as the heat transmission can units of variance 6 electrostatic chuck 3 and the gap between the holding device main body 1A at electrostatic chuck 3 and holding device main body 1A because of the thermal characteristics difference of each material has produced during thermal deformation such as crooked, also can absorb distortion, utilize gas transfer to guarantee the stable coefficient of overall heat transmission.
In addition in the present embodiment, owing to only utilize heat insulating component 7 sealings around the heat transmission energy units of variance 6, so when changing electrostatic chuck 3, when exchanging, compare, also carry out easily operation with the situation of using heat transfer material such as indium by maintenance according to the serviceability temperature condition.
The 4th execution mode
Fig. 6 is the schematic diagram of the base plate keeping device of expression the 4th execution mode.Fig. 4 is the cutaway view that expression heat is transmitted the cross-sectional configurations of energy units of variance.Describe for the identical Reference numeral of member mark identical with the 3rd execution mode.
The base plate keeping device 21 of the 4th execution mode be with the base plate keeping device of the 3rd execution mode same size in changed the structure that the heat transmission on the top of dividing the circulatory mediator circulation path 100 that is formed on holding device main body 1A inside can units of variance 6 and formed.
Promptly, the heat transmission in the 4th execution mode can units of variance 6 with the 1st plate body 16 with the 17 relative configurations of the 2nd plate body and division formation, the 1st plate body 16 and the 2nd plate body 17 have respectively holds up circular-arc fin 16A, the 17A that forms on opposite face.The fin 16A of above-mentioned the 1st plate body 16 disposes the vertical section shape shape in wave shape in space with fin 17A staggered being adjacent under the state of relative configuration of the 2nd plate body 17.
The 4th execution mode plays the action effect identical with the 3rd execution mode basically, particularly adopts the 4th execution mode, utilizes fin 16A, 17A the internal structure of heat transmission energy units of variance 6 to be formed the spatial configuration of wave mode.Thereby, play the hot translational speed that can increase between heat transfer area, raising holding device main body and confining gas, further these controlled distinctive effects that improve the heat transfer that obtains by the adjustment confining pressure.
The 5th execution mode
Below, adopt base plate keeping device of the present invention to come the control basal plate method of temperature is described.
(1) control method 1
Before technology begins
Utilize heater block 4 heated substrates 10 in the electrostatic chuck 3, be warmed up to design temperature, keep constant and begin up to technology.At this moment, supply with the confining gas 103 that heat is transmitted energy units of variance 6.
After technology begins
When input is risen from the heat of plasma, supply with the confining gas 103 that heat is transmitted energy units of variance 6 at substrate temperature (=electrostatic chuck temperature), keep the pressure of confining gas consistently and substrate temperature is reduced to design temperature.In addition, also can reduce the pressure of confining gas at substrate temperature near the moment of design temperature.After substrate temperature becomes design temperature, regulate the heating undertaken by heater block 4 and the balance of the heat extraction can units of variance 6 carried out via the heat transmission, substrate temperature is held in design temperature.
(2) control method 2
Before technology begins
Utilize heater block 4 heated substrates 10 in the electrostatic chuck 3, make substrate 10 be warmed up to design temperature.Afterwards, supply with heat and transmit the confining gas 103 of energy units of variance 6, the pressure of confining gas is maintained that measure, that can obtain the required coefficient of overall heat transmission of heat extraction in advance pressure, and adjusts the heating efficiency of heater block, substrate temperature is remained design temperature begin up to technology.
After technology begins
When input is risen from the heat of plasma, regulate the heating undertaken by heater block 4 and the balance of the heat extraction carried out via heat transmission energy units of variance 6 at substrate temperature (=electrostatic chuck temperature), substrate temperature is held in design temperature.
(3) control method 3
Before technology begins
Identical with control method 2.
After technology begins
When input is risen from the heat of plasma, make the pressure of the confining gas 103 that heat transmission can units of variance 6 rise the reduction substrate temperature at substrate temperature (=electrostatic chuck temperature).In the moment of substrate temperature near design temperature, the pressure before making the pressure of confining gas turn back to technology to begin.After substrate temperature becomes design temperature, regulate the heating undertaken by heater block 4 and the balance of the heat extraction can units of variance 6 carried out via the heat transmission, substrate temperature is held in design temperature.
The present invention is not limited to above-mentioned the 1st～the 5th execution mode, can carry out various changes in the scope that does not break away from purport of the present invention.For example, when the heat in the heat transmission can units of variance 6 was transmitted energy shortage, upper and lower surface that can units of variance 6 with the heat transmission formed black and improves thermal emissivity rate and thermal absorptivity, improved to be got final product by the transmission energy that radiation produced.
In addition, in the heat transmission can units of variance 6,, also can be configured in the seal that also can use under 200～500 ℃ the temperature conditions, for example carbon plate etc. at the upper-lower position of heat insulating component 7 in order to improve the air-tightness of gas.
Industrial applicibility
Base plate keeping device of the present invention can not only be applicable to sputter equipment, device for dry etching, and can be applicable to the base plate keeping device that plasma ashing (asher) device, CVD device and liquid crystal display manufacturing installation etc. have the treating apparatus of vacuum tank.
Claims (18)
1. base plate keeping device, its substrate in the holding device main body keeps side to have electrostatic chuck, is used for substrate is carried out Electrostatic Absorption, it is characterized in that,
This base plate keeping device comprises:
Heater block, it is built in the above-mentioned electrostatic chuck, is used for heated substrates;
The circulatory mediator circulation path, it is formed on the inside of above-mentioned holding device main body, and the circulatory mediator supply part of supplying with circulatory mediator is connected with being used to circulate;
Heat is transmitted can units of variance, and it is enclosed in heat-conducting gas in the gap of above-mentioned holding device main body and above-mentioned electrostatic chuck and forms, and is connected with the heat-conducting gas feed system that can adjust confining pressure;
The gas packaged unit, it is enclosed in heat-conducting gas in the gap between above-mentioned electrostatic chuck and the aforesaid substrate and forms, and is connected with the heat-conducting gas feed system.
2. base plate keeping device according to claim 1 is characterized in that,
To be set at 0.15～0.5mm as the above-mentioned holding device main body of above-mentioned heat transmission energy units of variance and the gap between the above-mentioned electrostatic chuck.
3. base plate keeping device according to claim 1 and 2 is characterized in that,
Above-mentioned heat transmission can change the coefficient of overall heat transmission according to the confining pressure and the having or not of gas of above-mentioned heat-conducting gas by units of variance.
4. according to any described base plate keeping device in the claim 1～3, it is characterized in that,
Be used for forming different systems with the heat-conducting gas feed system that is used for to above-mentioned gas packaged unit supply heat-conducting gas, can distinguish and control confining pressure independently to the heat-conducting gas feed system of above-mentioned heat transmission energy units of variance supply heat-conducting gas.
5. according to any described base plate keeping device in the claim 1～4, it is characterized in that,
Around the above-mentioned holding device main body of transmitting the energy units of variance as above-mentioned heat and the gap between the above-mentioned electrostatic chuck, dispose heat insulating component.
6. base plate keeping device according to claim 5 is characterized in that,
Above-mentioned heat insulating component is 25W/m by the coefficient of overall heat transmission
2The following material of K constitutes.
7. base plate keeping device, its substrate in the holding device main body keeps side to have electrostatic chuck, is used for substrate is carried out Electrostatic Absorption, it is characterized in that,
This base plate keeping device comprises:
Heater block, it is built in the above-mentioned electrostatic chuck, is used to heat aforesaid substrate;
The circulatory mediator circulation path, it is formed on the inside of above-mentioned holding device main body, and the circulatory mediator supply part of supplying with circulatory mediator is connected with being used to circulate;
Heat is transmitted can units of variance, and it divides the top of the above-mentioned circulatory mediator circulation path of the inside that is formed on above-mentioned holding device main body as the enclosure space of heat-conducting gas, and is connected with the heat-conducting gas feed system that can adjust confining pressure.
8. base plate keeping device according to claim 7 is characterized in that,
Heat transfer member is folded between above-mentioned holding device main body and the above-mentioned electrostatic chuck.
9. base plate keeping device according to claim 8 is characterized in that,
Above-mentioned heat transfer member is by having the coefficient of overall heat transmission at 10～200W/m
2Material in the scope of K forms.
10. base plate keeping device according to claim 9 is characterized in that,
Above-mentioned heat transfer member is carbon plate or aluminium nitride wafer.
11. according to any described base plate keeping device in the claim 7～10, it is characterized in that,
Between aforesaid substrate and above-mentioned electrostatic chuck, be closed with heat-conducting gas.
12. base plate keeping device according to claim 11 is characterized in that,
Be used for can units of variance supplying with the heat-conducting gas feed system of heat-conducting gas and being used for forming different systems, can distinguish and control confining pressure independently to the heat-conducting gas feed system of supply heat-conducting gas between aforesaid substrate and the above-mentioned electrostatic chuck to the transmission of above-mentioned heat.
13. according to any described base plate keeping device in the claim 7～12, it is characterized in that,
Around utilizing that heat insulating component divides that above-mentioned heat transmission can units of variance.
14. base plate keeping device according to claim 13 is characterized in that,
Above-mentioned heat insulating component is 25W/m by the coefficient of overall heat transmission
2The following material of K forms.
15. according to any described base plate keeping device in the claim 1～14, it is characterized in that,
Above-mentioned heater block is the heater that can control temperature.
16. according to any described base plate keeping device in the claim 1～15, it is characterized in that,
Above-mentioned circulatory mediator is fluorine class medium or cooling water or the pure water that is mixed with ethylene glycol.
17. according to any described base plate keeping device in the claim 1～16, it is characterized in that,
Above-mentioned heat transmission can units of variance be will have with disposing divide relative with the 2nd plate body of the 1st plate body of holding up the fin that forms on opposite face to form, and staggered being adjacent to of the fin of the fin of the 1st plate body and the 2nd plate body disposed.
18. according to any described base plate keeping device in the claim 1～17, it is characterized in that,
Above-mentioned heat-conducting gas is helium, argon gas or nitrogen.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008179792 | 2008-07-10 | ||
| JP2008179793 | 2008-07-10 | ||
| JP2008179792 | 2008-07-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103406117A Division CN102354673A (en) | 2008-07-10 | 2009-07-09 | Substrate temperature control method |
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| CN101625953A true CN101625953A (en) | 2010-01-13 |
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| CN200910150087A Pending CN101625953A (en) | 2008-07-10 | 2009-07-09 | Substrate holder |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103298715A (en) * | 2010-11-30 | 2013-09-11 | Tp太阳能公司 | Finger drives for IR wafer processing equipment conveyors and lateral differential temperature profile methods |
| CN103794527A (en) * | 2012-10-30 | 2014-05-14 | 中微半导体设备(上海)有限公司 | Static chuck heating method and static chuck heating system |
| CN108866503A (en) * | 2018-08-30 | 2018-11-23 | 东莞市典雅五金制品有限公司 | A kind of heating rotation of substrate platform |
| CN112663014A (en) * | 2021-01-05 | 2021-04-16 | 德润特数字影像科技（北京）有限公司 | Uniform temperature control device and method for coated substrate |
-
2009
- 2009-07-09 CN CN200910150087A patent/CN101625953A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103298715A (en) * | 2010-11-30 | 2013-09-11 | Tp太阳能公司 | Finger drives for IR wafer processing equipment conveyors and lateral differential temperature profile methods |
| CN103298715B (en) * | 2010-11-30 | 2015-08-05 | Tp太阳能公司 | For finger driving device and the horizontal differential temperature profile method of IR Wafer processing apparatus belt conveyor |
| CN103794527A (en) * | 2012-10-30 | 2014-05-14 | 中微半导体设备(上海)有限公司 | Static chuck heating method and static chuck heating system |
| CN103794527B (en) * | 2012-10-30 | 2016-08-24 | 中微半导体设备(上海)有限公司 | Electrostatic chuck heating means |
| CN108866503A (en) * | 2018-08-30 | 2018-11-23 | 东莞市典雅五金制品有限公司 | A kind of heating rotation of substrate platform |
| CN112663014A (en) * | 2021-01-05 | 2021-04-16 | 德润特数字影像科技（北京）有限公司 | Uniform temperature control device and method for coated substrate |
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