CN101625903B - 对存储器进行监控 - Google Patents
对存储器进行监控 Download PDFInfo
- Publication number
- CN101625903B CN101625903B CN200910149910.5A CN200910149910A CN101625903B CN 101625903 B CN101625903 B CN 101625903B CN 200910149910 A CN200910149910 A CN 200910149910A CN 101625903 B CN101625903 B CN 101625903B
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- CN
- China
- Prior art keywords
- data
- flash memory
- threshold
- quality
- piece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US7440808P | 2008-06-20 | 2008-06-20 | |
US61/074,408 | 2008-06-20 | ||
US12/476,683 | 2009-06-02 | ||
US12/476,683 US8407559B2 (en) | 2008-06-20 | 2009-06-02 | Monitoring memory |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101625903A CN101625903A (zh) | 2010-01-13 |
CN101625903B true CN101625903B (zh) | 2014-06-11 |
Family
ID=41432496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910149910.5A Active CN101625903B (zh) | 2008-06-20 | 2009-06-22 | 对存储器进行监控 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8407559B2 (zh) |
CN (1) | CN101625903B (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009156877A1 (en) * | 2008-06-24 | 2009-12-30 | Sandisk Il Ltd. | Method and apparatus for error correction according to erase counts of a solid-state memory |
TWI389122B (zh) * | 2008-10-30 | 2013-03-11 | Silicon Motion Inc | 用來存取一快閃記憶體之方法以及相關之記憶裝置及其控制器 |
US8370712B2 (en) * | 2009-07-23 | 2013-02-05 | International Business Machines Corporation | Memory management in a non-volatile solid state memory device |
US9104580B1 (en) | 2010-07-27 | 2015-08-11 | Apple Inc. | Cache memory for hybrid disk drives |
US8499227B2 (en) * | 2010-09-23 | 2013-07-30 | Micron Technology, Inc. | Memory quality monitor based compensation method and apparatus |
KR101214285B1 (ko) * | 2010-12-30 | 2012-12-20 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 이의 동작 방법 |
US8719531B2 (en) * | 2011-06-14 | 2014-05-06 | Western Digital Technologies, Inc. | System and method for performing data retention that incorporates environmental conditions |
CN103257902B (zh) * | 2013-04-10 | 2017-02-08 | 深圳市硅格半导体有限公司 | Nvram控制方法及系统 |
US9305663B2 (en) * | 2013-12-20 | 2016-04-05 | Netapp, Inc. | Techniques for assessing pass/fail status of non-volatile memory |
CN104934066B (zh) * | 2014-03-19 | 2018-03-27 | 安华高科技通用Ip(新加坡)公司 | Nand闪存中的读取干扰处理 |
US9811415B2 (en) | 2014-03-31 | 2017-11-07 | Symbol Technologies, Llc | Apparatus and method for detecting and correcting read disturb errors on a flash memory |
US9965181B2 (en) * | 2015-04-08 | 2018-05-08 | Kabushiki Kaisha Toshiba | Hybrid-HDD with multiple caching modes |
JP6358219B2 (ja) * | 2015-10-02 | 2018-07-18 | 京セラドキュメントソリューションズ株式会社 | 記憶域管理プログラム及び電子機器 |
US10290360B2 (en) | 2015-11-02 | 2019-05-14 | Gigadevice Semiconductor (Shanghai) Inc. | Methods, systems, and media for programming a storage device |
CN107203328A (zh) * | 2016-03-17 | 2017-09-26 | 伊姆西公司 | 存储管理方法和存储设备 |
US9904594B2 (en) * | 2016-04-15 | 2018-02-27 | Micron Technology, Inc. | Monitoring error correction operations performed in memory |
US10761754B2 (en) | 2018-08-07 | 2020-09-01 | Micron Technology, Inc. | Adjustment of a pre-read operation associated with a write operation |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6222762B1 (en) * | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US7941590B2 (en) * | 2006-11-06 | 2011-05-10 | Marvell World Trade Ltd. | Adaptive read and write systems and methods for memory cells |
US7573773B2 (en) * | 2007-03-28 | 2009-08-11 | Sandisk Corporation | Flash memory with data refresh triggered by controlled scrub data reads |
US8099632B2 (en) * | 2007-08-08 | 2012-01-17 | Sandisk Technologies Inc. | Urgency and time window manipulation to accommodate unpredictable memory operations |
-
2009
- 2009-06-02 US US12/476,683 patent/US8407559B2/en active Active
- 2009-06-22 CN CN200910149910.5A patent/CN101625903B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20090319825A1 (en) | 2009-12-24 |
US8407559B2 (en) | 2013-03-26 |
CN101625903A (zh) | 2010-01-13 |
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PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
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Effective date of registration: 20200507 Address after: Singapore City Patentee after: Marvell Asia Pte. Ltd. Address before: Ford street, Grand Cayman, Cayman Islands Patentee before: Kaiwei international Co. Effective date of registration: 20200507 Address after: Ford street, Grand Cayman, Cayman Islands Patentee after: Kaiwei international Co. Address before: Hamilton, Bermuda Islands Patentee before: Marvell International Ltd. |