CN101620980B - Back-end process simulated substrate and method for forming same - Google Patents
Back-end process simulated substrate and method for forming same Download PDFInfo
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- CN101620980B CN101620980B CN2008100401798A CN200810040179A CN101620980B CN 101620980 B CN101620980 B CN 101620980B CN 2008100401798 A CN2008100401798 A CN 2008100401798A CN 200810040179 A CN200810040179 A CN 200810040179A CN 101620980 B CN101620980 B CN 101620980B
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Abstract
The invention discloses a back-end process simulated substrate, which comprises an empty sheet and a medium layer covering the front side of the empty sheet; and the back side of the empty sheet is covered with a passivation layer. When the simulated substrate is applied to simulate production, the phenomena of exposure and defocusing can be reduced. The invention also discloses a method for forming the back-end process simulated substrate; the passivation layer is formed on the back side of the empty sheet; and when the formed simulated substrate simulates production, the phenomena of exposure and defocusing can be reduced.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of back-end process simulated substrate and forming method thereof.
Background technology
In the semiconductor industry, before product puts into production,, need carry out the practice that a large amount of research and development and simulation are produced, all need on the semiconductor-based end, to carry out each operation for choosing suitable technological parameter and design.As far as the simulation production of FEOL, only need on empty sheet, to carry out in proper order each operation and get final product; But; For back-end process, owing to only relate to metal interconnected technology, if order is carried out each operation; Required simulated time is long; And need not, all be chosen in usually on the sky sheet and form certain thickness dielectric layer, state the semiconductor-based end that the empty sheet of dielectric layer substitutes the experience FEOL to some extent as simulated substrate in order to apparatus.To said simulated substrate carry out gluing, exposure, development, etching groove, to said trench fill metal level, and after grinding said metal level, accomplish the simulated operation of metal interconnected processing procedure.
That is, current, the step that forms back-end process simulated substrate is: the sky sheet is provided; On said empty sheet, form dielectric layer, form back-end process simulated substrate.As shown in Figure 1, the said back-end process simulated substrate 10 of formation is the empty sheet 20 that has dielectric layer 30 on it.
In the practice, when utilizing the back-end process simulated substrate simulation to produce, when carrying out exposing operation, need at first obtain the optical imagery of said simulated substrate, to confirm the exposure technology parameter.Yet actual production is found, and is as shown in Figure 2; When utilizing above-mentioned back-end process simulated substrate simulation to produce, there is diplopia district 40 in the optical imagery 12 of the simulated substrate of acquisition, is called focus (hot-spot); The zone that exposure defocuses (defocus) takes place on the corresponding simulated substrate of said focus, that is, and in said zone; Exposure bench can't accurately focus on, and causes said simulated substrate after the experience exposing operation, to obtain exposure figure, as; When forming through hole, be prone to cause through hole disappearance (via missing); When forming metal wire, be prone to cause metal residual (metal scum); All will influence the accuracy of analog result.How to reduce the subject matter that those skilled in the art face that becomes of above-mentioned exposure blooming effect.
The notification number of announcing on May 4th, 2005 provides a kind of method and apparatus that is used for compensating for tilt and/or defocuses in the Chinese patent of " CN1200412C ", and this device has/defocus detector, is used for the inclination of detection optical recording medium and/or defocuses; And record compensator, according to by tilting/defocus the detected inclination of detector and/or defocus, utilizing predetermined scheme, compensation has the recording impulse of predetermined logging mode.This device defocuses adjustment and writes light intensity according to detected; According to detected inclination and offset logging mode; Adjustment needed light intensity energy level of record and/or write time; Has the mark of desirable size (length, width) with record, with the inclination that compensates highdensity optical system and/or defocus.
But, use the generation that said apparatus and method reduce blooming effect, need existing board is changed, increase detector and record compensator, increased the equipment input.
Summary of the invention
The invention provides a kind of back-end process simulated substrate, use said simulated substrate and simulate when producing, can reduce the generation of exposure blooming effect;
The invention provides a kind of back-end process simulated substrate formation method, use the said simulated substrate that forms and simulate when producing, can reduce the generation of exposure blooming effect.
A kind of back-end process simulated substrate provided by the invention comprises, the dielectric layer in empty sheet and the front that covers said empty sheet; The back side of said empty sheet is coated with passivation layer.
Alternatively, between said dielectric layer and empty sheet, accompany said passivation layer; Alternatively, said passivation layer comprises a kind of or its combination in silicon nitride, silicon oxynitride, carborundum or the silicon oxide carbide; Alternatively, the thickness range of said passivation layer is 50～300 dusts; Alternatively, between said passivation layer and empty sheet, accompany oxide layer; Alternatively, said thickness of oxide layer scope is 10～200 dusts.
A kind of back-end process simulated substrate formation method provided by the invention comprises:
At the positive dielectric layer that forms of empty sheet;
Form passivation layer having on the empty sheet of said dielectric layer, said passivation layer covers the back side of said empty sheet.
Alternatively, before forming said dielectric layer, also comprise: form the step that covers the positive passivation layer of said empty sheet, the passivation layer that covers the positive passivation layer of said empty sheet and the back side that covers said empty sheet forms synchronously; Alternatively, before the passivation layer that forms the back side that covers said empty sheet, also comprise having the step that forms oxide layer on the empty sheet of said dielectric layer, said oxide layer covers the back side of said empty sheet; Alternatively, before the passivation layer that forms the front that covers said empty sheet, also comprise, form the step that covers the positive oxide layer of said empty sheet, the oxide layer that covers the positive oxide layer of said empty sheet and the back side that covers said empty sheet forms synchronously; Alternatively, adopt boiler tube technology to form said passivation layer; Alternatively, adopt boiler tube technology to form said oxide layer.
Compared with prior art, technique scheme has the following advantages:
The back-end process simulated substrate that technique scheme provides; Through form passivation layer at the simulated substrate back side; Can reduce even avoid in process simulated process; The simulated substrate back side damage that causes when cleaning said simulated substrate to reduce the generation of exposure blooming effect, obtains to make public clearly optical imagery;
The back-end process simulated substrate formation method that technique scheme provides; Through form passivation layer at the simulated substrate back side; Can reduce even avoid in process simulated process; The simulated substrate back side damage that causes when cleaning said simulated substrate to reduce the generation of exposure blooming effect, obtains to make public clearly optical imagery.
Description of drawings
Fig. 1 is the structural representation of the process simulated substrate in prior art posterior segment;
Fig. 2 is the detected image sketch map when having thermal point defect in the prior art;
Fig. 3 is the structural representation of the back-end process simulated substrate of explanation first embodiment of the invention;
Fig. 4 is the structural representation of the back-end process simulated substrate of explanation second embodiment of the invention;
Fig. 5 is the structural representation of the back-end process simulated substrate of explanation third embodiment of the invention;
Fig. 6 is the structural representation of the back-end process simulated substrate of explanation fourth embodiment of the invention;
Fig. 7 is the schematic flow sheet of the formation back-end process simulated substrate of explanation first embodiment of the invention;
Fig. 8 is the structural representation after forming dielectric layer on the empty sheet of explanation first embodiment of the invention;
Fig. 9 covers the structural representation behind the passivation layer at the empty sheet back side for the formation of explanation first embodiment of the invention;
Figure 10 is the schematic flow sheet of the formation back-end process simulated substrate of explanation third embodiment of the invention;
Figure 11 is the structural representation after forming passivation layer on the empty sheet of explanation third embodiment of the invention;
Form the structural representation behind the dielectric layer on the empty sheet that covers passivation layer overleaf of Figure 12 for the explanation third embodiment of the invention.
Embodiment
Although below with reference to accompanying drawings the present invention is described in more detail, wherein represented the preferred embodiments of the present invention, be to be understood that those skilled in the art can revise the present invention described here and still realize advantageous effects of the present invention.Therefore, following description is appreciated that broad to those skilled in the art, and not as limitation of the present invention.
For clear, whole characteristics of practical embodiments are not described.In following description, be not described in detail known function and structure, because they can make the present invention because unnecessary details and confusion.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details, for example, change into another embodiment by an embodiment according to relevant system or relevant commercial restriction to realize developer's specific objective.In addition, will be understood that this development possibly be complicated and time-consuming, but only be routine work to those skilled in the art.
In the following passage, with way of example the present invention is described more specifically with reference to accompanying drawing.Will be clearer based on description and claims advantage of the present invention and characteristic.What need explanation is, accompanying drawing all adopts the form of simplifying very much and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
As the first embodiment of the present invention, as shown in Figure 3, said back-end process simulated substrate comprises, the dielectric layer 120 in empty sheet 100 and the front that covers said empty sheet 100; Especially, the back side of said empty sheet 100 is coated with passivation layer 140.
Said empty sheet 100 is commonly called as nude film (bare wafer), usually after removing surface contamination in order to detecting the board operation conditions and to simulate processing procedure, behind the experience reclaimer operation, said empty sheet 100 is reusable.
The material that said dielectric layer 120 comprises silicon dioxide, doped silica and has low-k is like black diamond, coral etc.The thickness range of said dielectric layer is 2000～5000 dusts, like 3000 dusts, 4000 dusts.Said dielectric layer 120 forms through hole and groove in order to interlayer dielectric layer in the simulation actual product in said dielectric layer 120, and after in said through hole and groove, filling metal, can simulate the metal interconnected technology in the back-end process.The concrete technology that forms said dielectric layer 120 can adopt any traditional method, repeats no more at this.
In the traditional handicraft, the said back-end process simulated substrate of formation is merely the empty sheet 100 that has dielectric layer 120 on it.But, when utilizing the simulation of said back-end process simulated substrate to produce, especially by the analogue copper processing procedure in the process that the simulation aluminum manufacturing procedure transforms; There is diplopia district (being focus) in the optical imagery of the simulated substrate that obtains, on the corresponding simulated substrate of said focus the zone that exposure defocuses takes place, in said zone; Exposure bench can't accurately focus on, and causes said simulated substrate after the experience exposing operation, to obtain exposure figure, as; When forming through hole, be prone to cause the through hole disappearance; When forming metal wire, be prone to cause metal residual.How to reduce the subject matter that the present invention solves that becomes of above-mentioned exposure blooming effect.
Inventor of the present invention thinks after analyzing, when the simulation back-end process, especially by the analogue copper processing procedure in the process that the simulation aluminum manufacturing procedure transforms; Owing to adopt electroplating technology in the copper wiring usually, cause when in dielectric layer, forming copper-connection, formation has certain thickness copper layer at the simulated substrate back side; When continuing follow-up aluminum manufacturing procedure, need usually to adopt cleaning remove said copper layer, said cleaning adopts usually and comprises sulfuric acid, phosphoric acid, hydrogen peroxide solution at interior mixed solution, cause removing said copper layer after; Said mixed solution is easy to corrode the back side of said simulated substrate, causes damage, and said damage makes the uniformity variation of the thickness of said simulated substrate; Then, the optical imagery of the said simulated substrate that obtains when causing making public is inhomogeneous, promptly; In said optical imagery, have the diplopia district, in said zone, exposure bench can't accurately focus on; Cause said simulated substrate after the experience exposing operation, to obtain exposure figure, influence the accuracy of analog result.
Purport of the present invention is, when forming simulated substrate, forms passivation layer 140 at its back side in advance, with by the analogue copper processing procedure in the process that the simulation aluminum manufacturing procedure transforms, when removing the copper layer that covers its back side, protect said simulated substrate not weather.
Inventor's undergoing analysis of the present invention proposes with the practice back, and comprehensive processing procedure is integrated and is difficult for being cleaned the consideration that solution corrodes, and said passivation layer 140 materials comprise a kind of or its combination in silicon nitride, silicon oxynitride, carborundum or the silicon oxide carbide.The thickness range of said passivation layer 140 is 50～300 dusts, like 100 dusts, 200 dusts.Said passivation layer 140 can adopt depositing operation to obtain.In addition, said passivation layer 140 also can obtain through utilizing boiler tube technology that passivation operation is carried out in conventional analogue substrate (being the empty sheet that has dielectric layer on it).Concrete technology can adopt any traditional method, repeats no more at this.
For improving the adhesive property between said passivation layer and the said simulated substrate, as shown in Figure 4 as the second embodiment of the present invention, between said passivation layer and empty sheet, accompany oxide layer 160.The thickness range of said oxide layer 160 is 10～200 dusts, like 50 dusts, 100 dusts.Said oxide layer 160 can adopt depositing operation to obtain.Said oxide layer 160 also can obtain through utilizing boiler tube technology that oxidation operation is carried out in the conventional analogue substrate.
Especially, said passivation layer and/or oxide layer can adopt boiler tube technology to obtain before forming dielectric layer.When adopting boiler tube technology to form said passivation layer, as the third embodiment of the present invention, said back-end process simulated substrate comprises, the dielectric layer 120 in empty sheet 100 and the front that covers said empty sheet 100; The back side of said empty sheet 100 is coated with passivation layer 140, between said dielectric layer 120 and empty sheet 100, also accompanies said passivation layer 140.
The said passivation layer that covers said empty sheet 100 fronts and the back side forms when adopting boiler tube technology simultaneously.Concrete technology can adopt any traditional method, repeats no more at this.
When adopting boiler tube technology to form said passivation layer and oxide layer, as the fourth embodiment of the present invention, said back-end process simulated substrate comprises, the dielectric layer 120 in empty sheet 100 and the front that covers said empty sheet 100; The back side of said empty sheet 100 is coated with passivation layer, between said dielectric layer 120 and empty sheet 100, accompanies said passivation layer 140; Between said passivation layer 140 and empty sheet 100, accompany oxide layer 160.The said oxide layer 160 that covers said empty sheet 100 fronts and the back side forms when adopting boiler tube technology simultaneously.
Through forming passivation layer at the simulated substrate back side, can reduce even avoid in process simulated process, the simulated substrate back side damage that causes when cleaning said simulated substrate to reduce the generation of exposure blooming effect, obtains to make public clearly optical imagery.
As shown in Figure 7, the present invention also provides a kind of back-end process simulated substrate formation method, comprising:
Step 71: combine Fig. 7 and shown in Figure 8, on empty sheet 100, form dielectric layer 120.
After this operation, form the simulated substrate in the traditional handicraft.
Said empty sheet 100 is commonly called as nude film (bare wafer), usually after removing surface contamination in order to detecting the board operation conditions and to simulate processing procedure, behind the experience reclaimer operation, said empty sheet 100 is reusable.
The material that said dielectric layer 120 comprises silicon dioxide, doped silica and has low-k is like black diamond, coral etc.The thickness range of said dielectric layer 120 is 2000～5000 dusts, like 3000 dusts, 4000 dusts.The concrete technology that forms said dielectric layer 120 can adopt any traditional method, repeats no more at this.
Said dielectric layer 120 forms through hole and groove in order to interlayer dielectric layer in the simulation actual product in said dielectric layer 120, and after in said through hole and groove, filling metal, can simulate the metal interconnected technology in the back-end process.
Step 72: combine Fig. 7 and shown in Figure 9, have formation passivation layer 140 on the empty sheet 100 of said dielectric layer 120, said passivation layer 140 covers the back side of said empty sheet 100.
Said passivation layer 140 in order to by the analogue copper processing procedure in the process that the simulation aluminum manufacturing procedure transforms, when removing the copper layer that covers its back side, protect said simulated substrate not weather.
Think after inventor's undergoing analysis of the present invention and the practice that comprehensive processing procedure is integrated and is difficult for being cleaned the consideration that solution corrodes, said passivation layer 140 materials comprise a kind of or its combination in silicon nitride, silicon oxynitride, carborundum or the silicon oxide carbide.The thickness range of said passivation layer 140 is 50～300 dusts, like 100 dusts, 200 dusts.Said passivation layer 140 can adopt depositing operation to obtain.In addition, for simplifying the operation, said passivation layer 140 boiler tube technology also capable of using is carried out passivation operation to conventional analogue substrate (being the empty sheet 100 that has dielectric layer 120 on it) and is obtained.Concrete technology can adopt any traditional method, repeats no more at this.
Especially, before forming said passivation layer 140, also comprise having the step that forms oxide layer on the empty sheet 100 of said dielectric layer 120, said oxide layer covers the back side of said empty sheet.Said thickness of oxide layer scope is 10～200 dusts, like 50 dusts, 100 dusts.Said oxide layer can adopt depositing operation to obtain.For simplifying the operation, said oxide layer boiler tube technology also capable of using is carried out oxidation operation to the conventional analogue substrate and is obtained.
Shown in figure 10, the present invention also provides a kind of back-end process simulated substrate formation method, comprising:
Step 101: combine Figure 10 and shown in Figure 11, adopt boiler tube technology on empty sheet 100, to form passivation layer 140, said passivation layer 140 covers the front and the back side of said empty sheet 100.
When adopting boiler tube technology on empty sheet 100, to form passivation layer 140, the said passivation layer 140 that covers said empty sheet 100 fronts and the back side forms simultaneously.
Said passivation layer 140 in order to by the analogue copper processing procedure in the process that the simulation aluminum manufacturing procedure transforms, when removing the copper layer that covers its back side, protect said simulated substrate not weather.
Think after inventor's undergoing analysis of the present invention and the practice that comprehensive processing procedure is integrated and is difficult for being cleaned the consideration that solution corrodes, said passivation layer 140 materials comprise a kind of or its combination in silicon nitride, silicon oxynitride, carborundum or the silicon oxide carbide.The thickness range of said passivation layer 140 is 50～300 dusts, like 100 dusts, 200 dusts.
Step 102: combine Figure 10 and shown in Figure 12, on the said passivation layer 140 that covers said empty sheet 100 fronts, form dielectric layer 120, form back-end process simulated substrate.
The material that said dielectric layer 120 comprises silicon dioxide, doped silica and has low-k is like black diamond, coral etc.The thickness range of said dielectric layer 120 is 2000～5000 dusts, like 3000 dusts, 4000 dusts.The concrete technology that forms said dielectric layer 120 can adopt any traditional method, repeats no more at this.
Especially, before forming passivation layer 140, comprise also that adopt boiler tube technology on empty sheet 100, to form the step of oxide layer, said oxide layer covers the front and the back side of said empty sheet.Said thickness of oxide layer scope is 10～200 dusts, like 50 dusts, 100 dusts.
Through forming passivation layer at the simulated substrate back side, can reduce even avoid in process simulated process, the simulated substrate back side damage that causes when cleaning said simulated substrate to reduce the generation of exposure blooming effect, obtains to make public clearly optical imagery.
What need explanation is that not elsewhere specified step all can use conventional methods acquisition, and concrete technological parameter is confirmed based on product requirement and process conditions.
Although the present invention has been described and has enough described embodiment in detail although describe through the embodiment at this, the applicant does not hope by any way the scope of claims is limited on this details.Other to those skilled in the art advantage and improvement are conspicuous.Therefore, relative broad range the invention is not restricted to represent and the specific detail of describing, equipment and the method and the illustrative example of expression.Therefore, these details be can depart from and the spirit and the scope of the total inventive concept of applicant do not broken away from.
Claims (10)
1. a back-end process simulated substrate comprises, the dielectric layer in empty sheet and the front that covers said empty sheet; It is characterized in that: the back side of said empty sheet is coated with passivation layer.
2. back-end process simulated substrate according to claim 1 is characterized in that: between said dielectric layer and empty sheet, accompany another passivation layer.
3. back-end process simulated substrate according to claim 1 and 2 is characterized in that: said passivation layer comprises a kind of or its combination in silicon nitride, silicon oxynitride, carborundum or the silicon oxide carbide.
4. back-end process simulated substrate according to claim 1 and 2 is characterized in that: the thickness range of said passivation layer is 50～300 dusts.
5. back-end process simulated substrate according to claim 1 and 2 is characterized in that: between said passivation layer and empty sheet, accompany oxide layer.
6. back-end process simulated substrate according to claim 5 is characterized in that: said thickness of oxide layer scope is 10～200 dusts.
7. a back-end process simulated substrate formation method is characterized in that, comprising:
At the positive dielectric layer that forms of empty sheet;
Form passivation layer having on the empty sheet of said dielectric layer, said passivation layer covers the back side of said empty sheet.
8. back-end process simulated substrate formation method according to claim 7; It is characterized in that: before the passivation layer that forms the back side that covers said empty sheet; Also comprise having the step that forms oxide layer on the empty sheet of said dielectric layer, said oxide layer covers the back side of said empty sheet.
9. back-end process simulated substrate formation method according to claim 7 is characterized in that: adopt boiler tube technology to form said passivation layer.
10. back-end process simulated substrate formation method according to claim 8 is characterized in that: adopt boiler tube technology to form said oxide layer.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1638089A (en) * | 2003-08-04 | 2005-07-13 | 国际商业机器公司 | Damascene interconnect structures including etchback for low-k dielectric materials |
| EP1670055A1 (en) * | 2004-12-09 | 2006-06-14 | INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) | Method for chip singulation |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1638089A (en) * | 2003-08-04 | 2005-07-13 | 国际商业机器公司 | Damascene interconnect structures including etchback for low-k dielectric materials |
| EP1670055A1 (en) * | 2004-12-09 | 2006-06-14 | INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) | Method for chip singulation |
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