CN101620915B - 一种垂直磁各向异性薄膜 - Google Patents

一种垂直磁各向异性薄膜 Download PDF

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CN101620915B
CN101620915B CN2009100861669A CN200910086166A CN101620915B CN 101620915 B CN101620915 B CN 101620915B CN 2009100861669 A CN2009100861669 A CN 2009100861669A CN 200910086166 A CN200910086166 A CN 200910086166A CN 101620915 B CN101620915 B CN 101620915B
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anisotropic film
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vertical magnetism
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CN101620915A (zh
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徐晓光
李晓其
姜勇
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University of Science and Technology Beijing USTB
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University of Science and Technology Beijing USTB
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Abstract

一种垂直磁各向异性薄膜，其易磁化轴方向垂直于薄膜平面，属于磁性材料领域。其特征在于：薄膜组分为Tbx(Co2FeZ)y，其中Z为Al、Si等元素，Co2FeZ为半金属Heusler合金组分，Tb和Fe原子的比例x∶y为0.2＜(x∶y)＜2。本发明的优点在于：该薄膜具有高垂直磁各向异性场，可以通过控制原子组分比调节矫顽力，并显著低于传统垂直磁各向异性膜的矫顽力，因此它可以作为铁磁层应用于垂直自旋阀或磁隧道结中，应用时能够克服小尺寸下的磁卷缩和涡旋磁畴结构，且矫顽力可调，能够满足超高灵敏度和存储密度的磁传感器或存储器的使用要求。

Description

一种垂直磁各向异性薄膜
技术领域
本发明属于磁性材料领域，特别涉及一种新型垂直磁各向异性薄膜，其易磁化轴方向垂直于薄膜平面。
背景技术
近年来磁存储技术飞速发展，磁存储密度不断提高，存储单元的尺寸逐渐减小。目前使用的磁性金属纳米薄膜的磁化方向都是在膜面内，即具有平面内磁各向异性，这种薄膜的尺寸降低到亚微米以下时，会遇到一系列难题，例如：薄膜磁化卷缩(magnetization curling)、涡流磁化(Vortex magnetization)，甚至超顺磁性等。针对这些问题，有学者提出了一种具有垂直膜面磁各向异性的磁性金属纳米多层膜[S.Maat et al.，Phys.Rev.Lett.87，087202(2001)]，即磁各向异性的易轴垂直于膜面。这种薄膜可以进一步做成自旋阀或隧道结等，加工成亚微米甚至更小尺寸的元件时，可以同时克服平面内磁各向异性磁性膜的三大致命缺陷——磁化卷缩、涡流磁畴和超顺磁，能够解决磁存储技术发展所遇到的尺寸瓶颈问题。目前垂直磁各向异性薄膜主要有(Co/Pt)n，(Co/Ni)n，FePt和TbCoFe等结构(n表示双层膜重复次数)[H.Sakurai et al.，J.Appl.Phys.102，013902(2007)]。但迄今为止，所有垂直磁各向异性薄膜的性能都不是很理想，特别是它们的矫顽力过高，难以翻转，不适合用作计算机读出磁头或磁场传感器。例如目前最常用的TbCoFe材料，其矫顽力在1000Oe以上。
发明内容
本发明目的在于提供一种垂直磁各向异性薄膜Tbx(Co2FeZ)y，以获得一种易磁化轴垂直于薄膜平面方向的垂直磁各向异性薄膜，这种新型薄膜材料不仅能够克服小尺寸下的磁卷缩和涡旋磁畴结构，而且具有很低的矫顽力，非常适合用在新型磁性存储或传感器件中。
一种垂直磁各向异性薄膜，其组分为Tbx(Co2FeZ)y，其中Z为Al、Si等元素，Co2FeZ为半金属Heusler合金组分，Tb和Fe原子的比例x∶y为0.2＜(x∶y)＜2。
通过调节x∶y的比值，可以使薄膜的矫顽力在100Oe到2000Oe间调节，垂直磁各向异性场介于5000Oe到11000Oe区间，300℃退火后薄膜仍保持垂直磁各向异性。
本发明的优点在于：Tbx(Co2FeZ)y薄膜在x∶y为0.2＜(x∶y)＜2的范围内为垂直磁各向异性，具有高垂直磁各向异性场，通过控制Tb与Fe原子组分比x∶y使矫顽力在100Oe到2000Oe范围内可调，并显著低于TbCoFe等传统垂直磁各向异性膜的矫顽力。因此它可以作为铁磁层应用于垂直自旋阀或磁隧道结中，应用时能够克服小尺寸下的磁卷缩和涡旋磁畴结构，且矫顽力可调，能够满足超高灵敏度和存储密度的磁传感器或存储器的使用要求。
具体实施方式
根据上述薄膜组分，采用磁控共溅射法制备了下列12种Tbx(Co2FeZ)y薄膜，其特点是Z位置可以是Al、Si等元素，Co2FeZ为半金属Heusler合金组分。
序号 材料组分 易磁化轴方向   垂直磁各向异性场(Oe) 矫顽力(Oe)
  1   Tb(Co2FeAl)5   垂直膜面   11000   100
  2   Tb(Co2FeAl)4   垂直膜面   10000   200
  3   Tb(Co2FeAl)3   垂直膜面   9500   300
  4   Tb(Co2FeAl)2   垂直膜面   8500   1000
  5   TbCo2FeAl   垂直膜面   6100   2000
  6   Tb2(Co2FeAl)   垂直膜面   5000   2000
  7   Tb(Co2FeSi)3   垂直膜面   10000   400
  8   Tb(Co2FeSi)2   垂直膜面   9000   700
  9   TbCo2FeSi   垂直膜面   7000   1000
  10   Tb2(Co2FeSi)   垂直膜面   5500   1800
  11   Tb(Co2FeAl)3，300℃退火   垂直膜面   8000   250
  12   Tb(Co2FeSi)3，300℃退火   垂直膜面   7500   300
如上表所示，上述Tbx(Co2FeZ)y薄膜均呈垂直磁各向异性，垂直磁各向异性场介于5000Oe到11000Oe之间，随着Tb和Fe原子比例x∶y的减小，矫顽力减小。抽样测试表明，薄膜在300℃退火后仍保持垂直磁各向异性。

Claims (2)

1.一种垂直磁各向异性薄膜，其特征在于：薄膜组分为Tbx(Co2FeZ)y，其中Z为Al或Si元素，Co2FeZ为半金属Heusler合金组分，Tb与Fe原子比为x∶y，0.2＜(x∶y)＜2。
2.如权利要求1所述的垂直磁各向异性薄膜，其特征在于：薄膜的矫顽力在100Oe到2000Oe之间，薄膜的垂直磁各向异性场介于5000Oe到11000Oe区间，300℃退火后薄膜仍保持垂直磁各向异性。
CN2009100861669A 2009-06-09 2009-06-09 一种垂直磁各向异性薄膜 Expired - Fee Related CN101620915B (zh)

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CN101752051B (zh) * 2010-03-05 2011-07-20 北京科技大学 一种垂直磁各向异性多层膜
CN102280113A (zh) * 2011-05-11 2011-12-14 复旦大学 一种交换耦合介质L10-FePt/[Co/Ni]N及其制备方法
TW201327956A (zh) 2011-12-28 2013-07-01 Ind Tech Res Inst 磁感應器
CN107587109B (zh) * 2017-08-21 2019-06-04 华侨大学 具有高垂直偏置场及大翻转场平台的复合多层膜结构
CN112928201B (zh) * 2019-12-05 2023-04-07 上海磁宇信息科技有限公司 具有晶格传输作用的合成反铁层的磁性隧道结结构

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