CN101615602B - Semiconductor device, test mould and test method - Google Patents
Semiconductor device, test mould and test method Download PDFInfo
- Publication number
- CN101615602B CN101615602B CN 200910160951 CN200910160951A CN101615602B CN 101615602 B CN101615602 B CN 101615602B CN 200910160951 CN200910160951 CN 200910160951 CN 200910160951 A CN200910160951 A CN 200910160951A CN 101615602 B CN101615602 B CN 101615602B
- Authority
- CN
- China
- Prior art keywords
- aluminium alloy
- anode
- test pieces
- negative electrode
- gate pole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The embodiment of the invention provides a semiconductor device, a test mould and a test method. The semiconductor device comprises a tube cap, an aluminum alloy anode, a tube core chip, an aluminum alloy cathode, a gate pole and a tube socket orderly stacked; and adjacent layers of components are electrically connected, and the gate pole is electrically connected with the tube core chip. The test method for the semiconductor device comprises the following steps: assembling a tube core chip to be tested, the gate pole component and an aluminum alloy test sheet group into a test fixture, wherein the tube core chip to be tested is sandwiched between the anode and the cathode of the aluminum alloy test sheet group; and performing dynamic testing. The method adopts the aluminum alloy sheet group to replace a rhodium plated molybdenum sheet group in the prior art, not only reduces testing cost, but also reduces turn on voltage drop, improves thermal resistance performance, and improves the combination with the surface of the tube core chip.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of semiconductor device and testing mould, method of testing.
Background technology
Gate level turn-off thyristor (GTO) and integrated gate commutated thyristor full-control type power semiconductor devices such as (IGCT); Characteristic with silicon rectification device; Can under high voltage, big current condition, work and its switching process can be controlled by gate pole, therefore be widely used in the power electronics circuits such as controlled rectification, AC voltage adjusting, contactless electronic beam switch, inversion and frequency conversion.
Structure after the encapsulation of this type full-control type power semiconductor device; As shown in Figure 1; Generally comprise that pipe cover 11, the sheet metal group as anode 12, tube core 13, sheet metal group, gate pole 15 and base 16 as negative electrode 14, can also comprise that being used for fixing pipe covers 11 and the alignment pin 17 of anode 12.Wherein, all select rhodanizing molybdenum sheet group usually for use as the sheet metal group of anode 12 with as the sheet metal group of negative electrode 14.Yet, all will be by only carrying out dynamic performance testing before such device is encapsulated to the chip of tube core 13, with the opening of check device, shutoff and frequency characteristic, filter out qualified products.
For the product operating position after guaranteeing test result and encapsulating is consistent as far as possible; When testing; Gate pole assembly and rhodanizing molybdenum test pieces group with measured tube die chip, test usefulness; Pack into jointly in the test fixture according to the connected mode after the encapsulation, so that this load mode keeps the most approaching with the actual products of accomplishing after the encapsulation.If the test result of measured tube die chip is qualified, then change follow-up die chip to be measured, still adopt the gate pole assembly of above-mentioned test usefulness and rhodanizing molybdenum test pieces group to test.But; If test result is defective; Then can damage the rhodanizing molybdenum test pieces group of measured tube die chip and test usefulness simultaneously, the damage of chip under test is the natural result of test screening, yet the damage of rhodanizing molybdenum test pieces group has increased the testing cost to this based semiconductor device.Therefore, the increase of testing cost when adopting rhodanizing molybdenum sheet group to cause carrying out dynamic test in the conventional semiconductor device, and, adopt rhodanizing molybdenum sheet group also to have the bigger shortcoming of on-state voltage drop in the conventional semiconductor device.
Summary of the invention
The embodiment of the invention provides a kind of semiconductor device and testing mould, method of testing, can reduce on-state voltage drop and can reduce testing cost.
In order to solve the problems of the technologies described above, the technical scheme of the embodiment of the invention is following:
A kind of semiconductor device comprises the pipe lid, aluminum alloy anode, die chip, aluminium alloy negative electrode, gate pole and the base that are cascading, and electric connection and said gate pole also are electrically connected with said die chip between every layer of adjacent members.
Further, said aluminum alloy anode is a disc, and said aluminium alloy negative electrode comprises a disk and the donut that is enclosed within said disk periphery, and said disk and annulus are positioned at same plane and radially have the annulus that is used to place said gate pole between the two.
Further, said aluminum alloy anode is a disc, and said aluminium alloy negative electrode is that disc and disc centre are provided with the installing hole that is used to place said gate pole.
Further, cover correspondence with said pipe on the said aluminum alloy anode and be provided with the location hole that is used for the installing and locating pin.
Further, said aluminium alloy is the LY12 aluminium alloy.
A kind of semiconducter device testing mould; Comprise the anode that is cascading, the anode of aluminium alloy test pieces group, negative electrode, gate pole and the negative electrode of aluminium alloy test pieces group, have the slit that is used to place die chip to be measured between the negative electrode of the anode of said aluminium alloy test pieces group and said aluminium alloy test pieces group.
Further; The anode of said aluminium alloy test pieces group is a disc; The negative electrode of said aluminium alloy test pieces group comprises a disk and the donut that is enclosed within said disk periphery, and said disk and annulus are positioned at same plane and radially have the annulus that is used to place said gate pole between the two.
Further, the anode of said aluminium alloy test pieces group is a disc, and the negative electrode of said aluminium alloy test pieces group is that disc and disc centre are provided with the installing hole that is used to place said gate pole.
Further, on the anode of said aluminium alloy test pieces group with said anode on the corresponding location hole that is used for the installing and locating pin that is provided with.
Further, the material of said aluminum alloy sheet group is the LY12 aluminium alloy.
A kind of semiconducter device testing method comprises:
Die chip to be measured, gate pole assembly and aluminium alloy test pieces are assembled into test fixture, and said die chip to be measured is clipped between the negative electrode of anode and said aluminium alloy test pieces group of said aluminium alloy test pieces group;
Carry out dynamic test.
Further, after said execution dynamic test, further comprise:
The analytical test result is if test passes is then changed die chip to be measured and repeated said execution dynamic test; If test failure repeats said execution dynamic test after then changing said aluminium alloy test pieces group and die chip to be measured.
Adopt the aluminum alloy sheet group to replace rhodanizing molybdenum sheet group of the prior art in the semiconductor device of the embodiment of the invention; Not only, reduced semiconductor device testing cost when being carried out dynamic test; And reduced on-state voltage drop, and improved resistive properties, improved surface combination with die chip.
Description of drawings
Fig. 1 is the sectional structure chart of the semiconductor device after a kind of encapsulation in the prior art;
Fig. 2 is the structural profile sketch map of a kind of semiconductor device of the embodiment of the invention;
Fig. 3 is the structural representation of aluminium alloy negative electrode in a kind of semiconductor device of the embodiment of the invention
Fig. 4 is the structural representation of a kind of semiconducter device testing mould of the embodiment of the invention;
Fig. 5 is the structural representation of the another kind of semiconducter device testing mould of the embodiment of the invention;
Fig. 6 is the sectional structure chart of a kind of semiconducter device testing mould of the embodiment of the invention;
Fig. 7 is a kind of semiconducter device testing method flow diagram of the embodiment of the invention;
Fig. 8 is the flow chart of the another kind of semiconducter device testing method of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing and embodiment, technical scheme of the present invention is described.
With reference to Fig. 2, be the structural profile sketch map of a kind of semiconductor device of the embodiment of the invention.
In the present embodiment, this semiconductor device replaces the package parts of rhodanizing molybdenum component sets as full compression joint type device for adopting the aluminium alloy element group.This semiconductor device can comprise pipe lid 21, aluminum alloy anode 22, die chip 23, aluminium alloy negative electrode 24, gate pole 25 and the base 26 that stacks gradually connection.Electric connection and said gate pole also are electrically connected with die chip 23 between every layer of adjacent members.Identical in the connected mode of each several part and the prior art.
Wherein, pipe covers 21 anodes as this semiconductor device, and base 26 is as the negative electrode of this semiconductor device.Aluminum alloy anode 22 is a disc in this semiconductor device; The pipe cover 21 and aluminum alloy anode 22 on all location hole can be set; Be used for installing and locating pin 22 so that two members are positioned; Be provided with die chip 23 between aluminum alloy anode 22 and the aluminium alloy negative electrode 24; As shown in Figure 3, aluminium alloy negative electrode 24 can comprise a disk 241 and the donut 242 that is enclosed within said disk periphery, and this disk 241 is positioned at same plane and radially has the annulus 243 that is used to place gate pole 24 between the two with annulus 242.Gate pole 25 is annular and has certain thickness vertically as shown in Figure 2, and radially outward side is extended an extraction electrode in annulus wall upper edge.Base 26 is similar with aluminium alloy negative electrode 24 shapes, also can comprise a disk and an annulus, and also have an annulus between the two, is used to place gate pole 25.Gate pole 25 is placed in the annulus of annulus and base 26 of aluminium alloy negative electrode 24, realized the applying between base 26, gate pole 25 and aluminium alloy negative electrode 24 are layer by layer, and guaranteed that gate pole 25 contacts with the die chip 23 that is positioned at aluminium alloy negative electrode 24 tops.
In another embodiment of the present invention; The aluminium alloy negative electrode can include only a disk, and an installing hole that is used to place gate pole is set on this disk, the also corresponding installing hole that is provided for placing gate pole on base; Gate pole is shaped as cylinder among this embodiment; Through inserting in the installing hole on aluminium alloy negative electrode and base, realize the applying between base, gate pole and aluminium alloy negative electrode are layer by layer, and guarantee that gate pole contacts with the die chip that is positioned at aluminium alloy negative electrode top.
According to the semiconductor device after the said structure encapsulation; Through adopting the aluminium alloy element group to replace rhodanizing molybdenum component sets of the prior art; Also reduced when having reduced the semiconductor device cost when testing owing to rhodanizing molybdenum test pieces group is damaged produce expensive; And this semiconductor device reduced on-state voltage drop, improved resistive properties, improved the surface combination with die chip.
Among the embodiment of above-mentioned semiconductor device, the shape and size of each parts, and being provided with of location hole can adjust as required, and the material of aluminium alloy negative electrode and aluminum alloy anode can be chosen the aluminum alloy materials of LY12 aluminium alloy or other type.
To electricity, calorifics, mechanical property, be that main component molybdenum in example and the rhodanizing molybdenum sheet group compares with the typical duralumin, hard alumin ium alloy 2024 (LY12) in the Solder for Al-Cu Joint Welding-magnesium system, as shown in the table:
The physical parameter contrast (representative value) that last table is molybdenum materials and aluminium this shows that the aluminum alloy sheet group is compared with rhodanizing molybdenum sheet group and reduced on-state voltage drop, has improved resistive properties.And; Because two surfaces of measured tube die chip are blunt aluminium; Therefore the aluminum alloy sheet group is a kind of surface contact of close material with contacting of die chip; Compare with material different and contact, its result should be favourable, therefore adopts the aluminum alloy sheet group also to improve the surface combination with die chip.
The LY12 aluminum alloy sheet group that the embodiment of the invention has adopted, LY12 (2024) intensity of aluminum alloy is high, and certain thermal endurance is arranged, and can be used as the working part below 150 ℃.Temperature is higher than 125 ℃, the also height of strength ratio 7075 aluminium alloys of 2024 aluminium alloys.Forming property is all relatively good under hot state, annealing and the new as-quenched, and the heat treatment reinforcement effect is remarkable, but Technology for Heating Processing is strict.Corrosion stability is relatively poor, but coats and can be effectively protected with fine aluminium; Adopt special process to weld, also can rivet.Be widely used in aircaft configuration, rivet, truck wheel hub, propeller element and other structural members.Certainly, the aluminium alloy test pieces group that is adopted in the present embodiment is not limited to uses the LY12 aluminium alloy.
In the prior art; When die chip is carried out dynamic test; Test result is defective each time all can damage the rhodanizing molybdenum test pieces group of testing usefulness in the damage die chip, and each pays rhodanizing molybdenum sheet group value itself all up to 1000 yuan, if survey 10,000 devices every year; Suppose that the dynamic test percent of pass is 85%, then will produce the loss of ten thousand yuan of 1500 * 1000=150.This has increased the testing cost of semiconductor device undoubtedly greatly, also is a kind of great waste simultaneously.Through the research to the various physical properties of rhodanizing molybdenum sheet group and substitution material, in conjunction with the semiconductor device in the foregoing description, the embodiment of the invention has proposed to adopt the semiconducter device testing mould of aluminum alloy materials as the test pieces group, is described below:
With reference to Fig. 4, be the structural representation of a kind of semiconducter device testing mould of the embodiment of the invention.
This testing mould can comprise the anode 41 that is cascading, the anode 42 of aluminium alloy test pieces group, negative electrode 44, gate pole 45 and the negative electrode 46 of aluminium alloy test pieces group.Has the slit that is used to place die chip 43 to be measured between the negative electrode 44 of the anode 42 of aluminium alloy test pieces group and aluminium alloy test pieces group.
When the installation that utilizes before this testing mould carries out semiconducter device testing; Can earlier negative electrode 46 be fixed on the testboard through location hole and alignment pin; Extraction electrode below part with gate pole 45 is installed in the annulus 461 that is provided with on the negative electrode 46 then; And the extraction electrode of gate pole 45 is stuck in the groove on annulus surface of negative electrode 46, again the negative electrode 44 of aluminium alloy test pieces group is sleeved on the top of gate pole 45, concrete; In the annulus 443 that the negative electrode 44 that makes the extraction electrode upper section of gate pole 45 be installed in aluminium alloy test pieces group has; And guaranteeing that gate pole 45 contacts with the die chip 43 of negative electrode 44 tops that are positioned at aluminium alloy test pieces group, the applying of the negative electrode 44 of realization negative electrode 46, gate pole 45 and aluminium alloy test pieces group between layer by layer is shown in the sectional structure chart among Fig. 6.On the negative electrode 44 of aluminium alloy test pieces group, place die chip 43 to be measured; The anode 42 of placing aluminium alloy test pieces group above die chip 43; Also be about to above the anode 42 of aluminium alloy test pieces group, anode 41 is set at last between the anode 42 of negative electrode 44 and aluminium alloy test pieces group that die chip 43 is clipped in aluminium alloy test pieces group.Anode 42 for the ease of anode 41 and aluminium alloy test pieces group is accurately located, and can also alignment pin be inserted in the anode 42 and the location hole on the anode 41 of aluminium alloy test pieces group.
The embodiment of the invention adopts aluminium alloy test pieces group to replace rhodanizing molybdenum test pieces group of the prior art; One cover test pieces is formed these about 25 yuan; Still by the annual percent of pass of surveying 10,000 devices and 85%; The loss that produces drops to ten thousand yuan of 1500 * 25=3.75, and it is original 2.5% that loss is merely on year-on-year basis, reduced by 97.5%.This testing mould has not only reduced testing cost, and aluminium alloy test pieces group compares with rhodanizing molybdenum test pieces group and reduced on-state voltage drop, has improved resistive properties, has improved the surface combination with die chip.
With reference to Fig. 5, be the structural representation of the another kind of semiconducter device testing mould of the embodiment of the invention.
This testing mould can comprise the anode 51 that is cascading, the anode 52 of aluminium alloy test pieces group, negative electrode 54, gate pole 55 and the negative electrode 56 of aluminium alloy test pieces group.Has the slit that is used to place die chip 53 to be measured between the negative electrode 54 of the anode 52 of aluminium alloy test pieces group and aluminium alloy test pieces group.
The difference of present embodiment and previous embodiment is that in the present embodiment, the negative electrode 54 of aluminium alloy test pieces group is a disk, on this disk, has an installing hole 541 that is used to place gate pole 55.Shown in gate pole 55 as the figure, be the cylinder bodily form, an extraction electrode is extended in this cylinder top.Negative electrode 56 is similar with negative electrode 54 shapes of aluminium alloy test pieces group; Also be disc, and have an installing hole 561 on the disk, be used to place gate pole 55; A location hole that is used for the installing and locating pin also can be set on the disk of negative electrode 56, be used for the negative electrode location is placed in testboard.
When the installation that utilizes before this testing mould carries out semiconducter device testing; Can earlier negative electrode 56 be fixed on the testboard through location hole and alignment pin; Extraction electrode below part with gate pole 55 is installed in the installing hole 561 that is provided with on the negative electrode 56 then; Negative electrode 54 with aluminium alloy test pieces group is sleeved on the gate pole 55 again, and is concrete, and gate pole 55 is installed in the installing hole 541 of negative electrode 54 of aluminium alloy test pieces group; And guarantee that gate pole 55 contacts with the die chip 53 of negative electrode 54 tops that are positioned at aluminium alloy test pieces group, the applying of the negative electrode 54 of realization negative electrode 56, gate pole 55 and aluminium alloy test pieces group between layer by layer.Disposed tubes die chip 53 on the negative electrode 54 of aluminium alloy test pieces group; The anode 52 of placing aluminium alloy test pieces group above die chip 53; Also be about to above the anode 52 of aluminium alloy test pieces group, anode 51 is set at last between the anode 52 of negative electrode 54 and aluminium alloy test pieces group that die chip 53 is clipped in aluminium alloy test pieces group.Anode 52 for the ease of anode 51 and aluminium alloy test pieces group is accurately located, and can also alignment pin be inserted in the anode 52 and the location hole on the anode 51 of aluminium alloy test pieces group.
Testing mould in the present embodiment has replaced rhodanizing molybdenum test pieces group of the prior art through adopting aluminium alloy test pieces group; Not only reduced testing cost; And aluminium alloy test pieces group is compared with rhodanizing molybdenum test pieces group and has been reduced on-state voltage drop; Improved resistive properties, improved surface combination with die chip.
Among the above-mentioned testing mould embodiment, the shape and size of each parts can be provided with as required, and the material of test pieces group can be chosen the aluminum alloy materials of LY12 aluminium alloy or other type.
Accordingly, the embodiment of the invention has also proposed to adopt the semiconducter device testing method of aluminum alloy materials as the test pieces group, is described below:
Combine the structural representation of testing mould of method of testing flow chart and Fig. 4, Fig. 5 of Fig. 7 that this method of testing is described at present.
With reference to Fig. 7, be a kind of semiconducter device testing method flow diagram of the embodiment of the invention.
This method of testing can comprise:
When die chip to be measured, gate pole assembly and aluminium alloy test pieces were assembled into test fixture, aluminium alloy test pieces group replaced existing rhodanizing molybdenum test pieces to be assembled into test fixture, and concrete order of installing can be identical with prior art with method.Concrete; Can set testboard earlier, test pieces group and die chip to be measured are ready to, then according to like Fig. 4 or structure shown in Figure 5; Can earlier negative electrode be fixed on the testboard; Place the anode of gate pole, the negative electrode of aluminium alloy test pieces group, die chip to be measured, aluminium alloy test pieces group then successively, above the anode of test pieces group, anode is set at last, and keep being between each layer status of electrically connecting.Certainly, mounting means has multiple, is not limited only to aforesaid way.
After treating that above-mentioned each assembly installs, begin to carry out dynamic test, this dynamic test can be controlled execution by software program, also can carry out through manual operation.Should explain then that die chip to be tested was qualified through this test, if not through test, explain that then die chip is defective, then die chip and aluminium alloy test pieces group are all damaged in this test process.This test process is a prior art, repeats no more here.
Replaced rhodanizing molybdenum test pieces group of the prior art through employing aluminium alloy test pieces group in the present embodiment method of testing; Not only reduced testing cost; And aluminium alloy test pieces group is compared with rhodanizing molybdenum test pieces group and has been reduced on-state voltage drop; Improved resistive properties, improved surface combination with die chip.
With reference to Fig. 8, be the flow chart of the another kind of semiconducter device testing method of the embodiment of the invention.
This method is directed to the test of a plurality of die chips to be measured, is applied to test pipelining usually, and this method can comprise:
Step 801 is assembled into test fixture with die chip to be measured, gate pole assembly and aluminium alloy test pieces, and said die chip to be measured is clipped between the negative electrode of anode and said aluminium alloy test pieces group of said aluminium alloy test pieces group.
Step 802 is carried out dynamic test.
Wherein, step 801-802 is identical with previous embodiment, repeats no more here.
In this step,, then only change die chip to be measured if test result is qualified; Repeating step detects and gets final product; But,, explain that then aluminium alloy test pieces group also is destroyed in this test process if test result is defective; Then need all change aluminium alloy test pieces group and die chip to be measured, repeating step 802 then.This process can be controlled or the manual operation completion through software program.
Present embodiment has reduced on-state voltage drop through aluminium alloy test pieces group is applied to not only reduce testing cost in the test to a plurality of die chips, has improved resistive properties, has improved the surface combination with die chip, and has improved testing efficiency.
Above-mentioned each embodiment not only can be applied to full-control type power semiconductor devices such as gate level turn-off thyristor and integrated gate commutated thyristor, can also be applied to other similar semiconductor device.
Above-described embodiment of the present invention does not constitute the qualification to protection range of the present invention.Any modification of within spirit of the present invention and principle, being done, be equal to replacement and improvement etc., all should be included within the claim protection range of the present invention.
Claims (8)
1. full-control type power semiconductor device; It is characterized in that; The die chip, aluminium alloy negative electrode, gate pole and the base that comprise the pipe lid that is cascading, aluminum alloy anode, full-control type power semiconductor device; Electrically connect between the negative electrode of said pipe lid and aluminum alloy anode, said aluminum alloy anode and the anode of die chip, said die chip and aluminium alloy negative electrode, said aluminium alloy negative electrode and gate pole and said gate pole and the base, and said gate pole also is electrically connected with the gate pole of said die chip; Wherein, Said aluminum alloy anode is a disc; Said aluminium alloy negative electrode comprises a disk and is enclosed within the donut of said disk periphery, and said disk and annulus are positioned at same plane and radially have the annulus of the gate pole that is used to place said semiconductor device between the two.
2. semiconductor device according to claim 1 is characterized in that, covers correspondence with said pipe on the said aluminum alloy anode and is provided with the location hole that is used for the installing and locating pin.
3. semiconductor device according to claim 1 is characterized in that, said aluminium alloy is the LY12 aluminium alloy.
4. the testing mould of the die chip of a full-control type power semiconductor device; It is characterized in that; Comprise the anode of the testing mould that is cascading, the anode of aluminium alloy test pieces group, the negative electrode of aluminium alloy test pieces group, the gate pole of testing mould and the negative electrode of testing mould, electrically connect between the negative electrode of the gate pole of the anode of the anode of said testing mould and aluminium alloy test pieces group, the negative electrode of said aluminium alloy test pieces group and testing mould and the gate pole of said testing mould and testing mould;
Has the slit that is used to place die chip to be measured between the negative electrode of the anode of said aluminium alloy test pieces group and said aluminium alloy test pieces group;
Wherein, The anode of said aluminium alloy test pieces group is a disc; The negative electrode of said aluminium alloy test pieces group comprises a disk and is enclosed within the donut of said disk periphery, and said disk and annulus are positioned at same plane and radially have the annulus of the gate pole that is used to place said testing mould between the two.
5. testing mould according to claim 4 is characterized in that, on the anode of said aluminium alloy test pieces group with the anode of said testing mould on the corresponding location hole that is used for the installing and locating pin that is provided with.
6. testing mould according to claim 4 is characterized in that, the material of said aluminum alloy sheet group is the LY12 aluminium alloy.
7. the method for the die chip of a semiconductor device of testing full-control type electric power is characterized in that, comprising:
The gate pole and the described aluminium alloy test pieces of claim 4 of die chip to be measured, the described testing mould of claim 4 are assembled into testing mould as claimed in claim 4; Said die chip to be measured is clipped between the negative electrode of anode and said aluminium alloy test pieces group of said aluminium alloy test pieces group; Wherein, between the anode of the anode of said die chip and aluminium alloy test pieces group, electrically connect between the negative electrode of the negative electrode of said die chip and aluminium alloy test pieces group and between the gate pole of the gate pole of said die chip and testing mould;
Carry out dynamic test.
8. method according to claim 7 is characterized in that, after said execution dynamic test, further comprises:
The analytical test result is if test passes is then changed die chip to be measured and repeated said execution dynamic test; If test failure repeats said execution dynamic test after then changing said aluminium alloy test pieces group and die chip to be measured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910160951 CN101615602B (en) | 2009-07-31 | 2009-07-31 | Semiconductor device, test mould and test method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910160951 CN101615602B (en) | 2009-07-31 | 2009-07-31 | Semiconductor device, test mould and test method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101615602A CN101615602A (en) | 2009-12-30 |
| CN101615602B true CN101615602B (en) | 2012-08-15 |
Family
ID=41495150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910160951 Active CN101615602B (en) | 2009-07-31 | 2009-07-31 | Semiconductor device, test mould and test method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101615602B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811424B (en) * | 2012-11-12 | 2017-08-29 | 湖北台基半导体股份有限公司 | Total head connects encapsulation high-voltage semi-conductor device |
| CN103346130B (en) * | 2013-07-01 | 2015-11-11 | 株洲南车时代电气股份有限公司 | GCT gate insulation seat and gate pole assembly |
| CN105137315B (en) * | 2014-05-28 | 2018-04-13 | 株洲南车时代电气股份有限公司 | A kind of thyristor chip gate pole test fixture |
-
2009
- 2009-07-31 CN CN 200910160951 patent/CN101615602B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN101615602A (en) | 2009-12-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100418214C (en) | Surface mount multichip devices | |
| US6495924B2 (en) | Semiconductor device, including an arrangement to provide a uniform press contact and converter using same | |
| Rudzki et al. | Power modules with increased power density and reliability using Cu wire bonds on sintered metal buffer layers | |
| CN108701667A (en) | Semiconductor equipment sub-component | |
| CN101615602B (en) | Semiconductor device, test mould and test method | |
| US11984326B2 (en) | Heat dissipating substrate for semiconductor and preparation method thereof | |
| CN100521192C (en) | Semiconductor device and manufacturing method thereof | |
| CN104599846A (en) | Chip high-voltage miniature long-life aluminum electrolytic capacitor and manufacturing method thereof | |
| Chen et al. | A tutorial on high-density power module packaging | |
| CN1802741A (en) | Semiconductor device | |
| CN110211885B (en) | Power chip pre-packaging method, power chip pre-packaging structure, power chip pre-packaging method, power chip pre-packaging structure and wafer pre-packaging structure | |
| EP2560203A1 (en) | Power semiconductor arrangement | |
| CN208580629U (en) | A kind of surface attaching type varistor | |
| JP6868322B2 (en) | Power converter | |
| CN104465594A (en) | Rectification component with embedded cooling fins and manufacturing method thereof | |
| CN212086657U (en) | Plastic package rectification module based on shell stress | |
| CN1292150A (en) | Low inductance controlled gate controlled thyristor | |
| CN112652612B (en) | Stacked crimping type power module and manufacturing method thereof | |
| CN210575896U (en) | High-voltage power module shell | |
| DE102023124802A1 (en) | Semiconductor device, power conversion device and method of manufacturing a semiconductor device | |
| CN118471964B (en) | High-temperature high-pressure fully-sealed silicon stack | |
| CN103632989A (en) | Method for manufacturing an electronic module and an electronic module | |
| CN205142030U (en) | Domestic idle call rectifier bridge heap of high performance | |
| CN104471705B (en) | Low thermal stress for large-scale semiconductor chip encapsulates | |
| CN211607193U (en) | Controller with heat dissipation power |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee after: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road Patentee before: ZHUZHOU CSR TIMES ELECTRIC Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200929 Address after: 412001 Room 309, floor 3, semiconductor third line office building, Tianxin hi tech park, Shifeng District, Zhuzhou City, Hunan Province Patentee after: Zhuzhou CRRC times Semiconductor Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. |