CN101610069B - Power amplifier, power amplifying circuit and power amplifying method - Google Patents
Power amplifier, power amplifying circuit and power amplifying method Download PDFInfo
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- CN101610069B CN101610069B CN2008101288468A CN200810128846A CN101610069B CN 101610069 B CN101610069 B CN 101610069B CN 2008101288468 A CN2008101288468 A CN 2008101288468A CN 200810128846 A CN200810128846 A CN 200810128846A CN 101610069 B CN101610069 B CN 101610069B
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Abstract
The invention relates to a power amplifier, a power amplifying circuit and a power amplifying method. The power amplifier comprises a first transistor, a second transistor and a dynamic biasing circuit, wherein the first transistor is configured to receive a radio-frequency input signal to be amplified from a grid electrode end; the second transistor is configured to be cascaded with the first transistor, the source electrode end of the second transistor is in series connected with the drain electrode end of the first transistor, and the drain electrode end of the second transistor outputs an amplifying signal; the dynamic biasing circuit is provided with two input ends and an output end, wherein one input end receives an input signal, the other input end is coupled with the drain electrode end of the first transistor, and the output end is coupled with the grid electrode end of the second transistor so as to modulate the voltage of the drain electrode end of the first transistor.
Description
Technical field
The present invention relates to power amplifier, especially in regard to by adjusting bias voltage with the power amplifier that reduces transistor cross-pressure voltage, power amplification circuit, and amplification method.
Background technology
In radio communication device, use various power amplifier to amplify the signal that will transmit.In these power amplifiers, mos field effect transistor (MOSFET) amplifying circuit is often used in the communicator with amplifying signal owing to characteristics such as having low cost and high integration.
But, as the amplifier of radio-frequency input signals the time, because the bias voltage of FET remains on the big peak power of the radiofrequency signal of high voltage and input, so transistor produces injury such as hot carrier effect, oxide layer collapse and causes its lost of life.Along with the progress of manufacture of semiconductor, transistor is more done littler, and passage is more and more short, and makes these effects obvious further.In order to improve these shortcomings, T.Sowalti and D.Leenaerts equal in " A 2.4GHz 0.18 μ m CMOS Self-Biased Cascode Power Amplifier with23dBm Output Power " literary composition of ISSCC Dig.Tech.Papers (294 to 295 pages) of in February, 2002 distribution, propose the change power amplifier of (cascode) of two strings of transistors.Fig. 5 shows the repeatedly power amplifier 200 of (cascode) of two MOSFET 202 of this kind and 204 strings.Generally speaking, MOSFET 204 as the transistor of common gate to bear high voltage cross-pressure V when being high-power as the output of amplifying signal and at input signal
Ds(drain electrode is to source electrode), its grid (V
G2) generally accept the Dc bias of 3.3V.MOSFET 202 is as the common source transistor, and its gate terminal is accepted Dc bias V
D(figure does not show) and radio-frequency input signals v
RfOwing to two transistors are arranged, so the crest voltage that can reduce input signal is to transistorized infringement.Yet along with the microminiaturization of manufacture of semiconductor, the resistance to pressure of MOSFET also decreases.For example, according to the MOSFET of 65nm processing procedure manufacturing the cross-pressure between tolerant drain electrode and source electrode be about 1.2 volts.And, can in MOSFET 202, produce drain electrode to the source electrode cross-pressure up to 6 volts according to the power amplifier 200 of prior art.Therefore, for example MOSFET 202 transistors such as grade are impaired because of high cross-pressure voltage easily in the power amplifier, thereby reduce life-span and reliability.
In addition, in U.S. Patent number 6784740, disclose the power amplifier that uses feedback technique.In this patent documentation, power amplifier as shown in Figure 6 is provided, to be a feedback circuit with circuit as Fig. 5 combine forms for it.The positive input terminal of feedback circuit 330 receives the RF input signal, and negative input end is connected to output Out, the output of feedback circuit 330 is connected to the gate terminal of field-effect transistor 310, use and adjust its bias voltage, the circuit power consumption when reducing the small-power input signal and the linearity when improveing high-power input signal.Yet this prior art does not consider to drain high cross-pressure voltage to source electrode to the transistorized injury as common source, can't provide protective effect to it yet.
Therefore, need have the power amplifier of the transistor drain-source electrode cross-pressure voltage that can effectively reduce common source, to promote the reliability and the useful life thereof of power amplifier.
Summary of the invention
Take into account above-mentionedly, the purpose of this invention is to provide the power amplifier with dynamic biasing circuit, described dynamic biasing circuit is dynamically adjusted along with input signal by the transistor cross-pressure that makes common source in the power amplifier and is reduced effectively.
According to an aspect of the present invention, power amplifier comprises: the first transistor is configured to the gate terminal receiving inputted signal; Transistor seconds is configured to go here and there mutually repeatedly (cascode) with the first transistor, and the source terminal of transistor seconds is connected with the drain electrode end of the first transistor, and the drain electrode end of transistor seconds is exported an amplifying signal; And dynamic biasing circuit, have two inputs, an input receives this input signal, and another input is coupled to the drain electrode end of the first transistor, and have output to be coupled to the gate terminal of transistor seconds, use the voltage of this drain electrode end of modulation the first transistor.
According to a further aspect of the invention, provide a kind of power amplification circuit, comprise: a power amplifier, in order to receiving an input signal and a bias voltage signal, and in order to according to this input signal to produce an amplifying signal; And a bias voltage adjustment unit, be coupled to this power amplifier, in order to receiving this input signal, and according to this input signal to produce this bias voltage signal.
According to a further aspect of the invention, provide a kind of amplification method, comprise: in order to export a bias voltage signal, wherein, this bias voltage signal corresponds to this input signal according to an input signal; And, a power amplifier is provided, in order to receiving this input signal and this bias voltage signal, and according to this input signal to produce an amplifying signal.
According to the present invention, the dynamic biasing circuit comprises envelope detector, be used for receiving inputted signal and produce the envelope of input signal, can comprise differential amplifier again and export one with the drain terminal voltage of the envelope of receiving inputted signal and the first transistor and adjust signal, can further comprise attenuator again with the drain voltage of decay from the first transistor input.
According to the present invention, this first transistor and transistor seconds are MOS (metal-oxide-semiconductor) memory, or complementary metal-oxide field-effect transistor (CMOSFET), preferably are MOSFET or the CMOSFET less than the manufacturing of 65nm processing procedure.
According to the present invention, the visual input signal of transistor drain voltage of the common source in the power amplifier and dynamically adjusting is used and is reduced the voltage of drain electrode to source electrode, thereby promotes transistorized reliability and life-span.
From the embodiments of the invention explanation of following conjunction with figs., when the effect that can be easier to understand purpose of the present invention, technology contents, characteristics and be reached.
Description of drawings
Fig. 1 is the circuit diagram of power amplifier according to an embodiment of the invention;
The circuit diagram of Fig. 2 power amplifier according to another embodiment of the present invention;
Fig. 3 A and 3B show the V according to common source in the power amplifier of embodiments of the invention and prior art respectively
dMeasure figure;
Fig. 4 shows according to the maximum cross-pressure of common source in the power amplifier of embodiments of the invention and the prior art measurement amount with respect to power output;
The string that Fig. 5 shows prior art is the circuit diagram of (cascode) formula power amplifier repeatedly; And
The string with FEEDBACK CONTROL that Fig. 6 shows prior art is the circuit diagram of (cascode) formula power amplifier repeatedly.
[main element symbol description]
100, the 100A power amplifier
101,201 resistance
102,104,202,204,305,310 transistors
106 bias circuits
1061 envelope detectors
1062 amplifiers
330 feedback circuits
340 attenuators
335,345 peak detectors
Embodiment
Described as prior art one joint, the string of prior art changes in (cascode) formula power amplifier, as the transistor drain of common source cross-pressure, can swing to change because of the amplitude of the radiofrequency signal of input and bear the cross-pressure of big drain electrode, thereby working life is shortened source electrode to source electrode.
Therefore, according to the present invention, will be by the dynamic biasing circuit be set, so that dynamically change as the transistor drain voltage of common source amplitude in the power amplifier along with the RF signal of input, and under Mean Input Power, drain electrode reduces the cross-pressure voltage of source electrode.
Then, please refer to accompanying drawing, it will specify the embodiment according to power amplifier of the present invention.
Fig. 1 is according to the embodiment of power amplifier 100 of the present invention.As shown in the figure, power amplifier 100 comprises transistor 102,104 and bias circuit 106.Transistor 102 and 104 disposes in string (cascode) mode that changes.Transistor 102 is as the common source of power amplifier 100, and transistor 104 is as the common gate of power amplifier 100.In one embodiment, transistor 102 and 104 can be MOSFET or CMOSFET.The drain electrode end of transistor 104 is connected to power supply V via resistance 101
DD, and this drain electrode end is as the output Out of the big device 100 of power.
The positive input terminal of bias circuit 106 receives envelope V
Dy, and negative input end is connected to the node 103 that transistor 102 is connected with 104.The voltage at node 103 places is the drain voltage V of transistor 102
dThe output of bias circuit 106 is connected to the gate terminal of transistor 104.
In another embodiment power amplifier 100A, as shown in Figure 2, bias circuit 106 also includes envelope (envelope) detector 1061 and amplifier 1062.Envelope detector 1061 received RF input signal v
Rf, and produce this radio-frequency input signals v
RfEnvelope V
Dy, because the radiofrequency signal v of input
RfAmplitude with variation, and envelope V
DyDetect radiofrequency signal v by envelope detector 1061
RfAmplitude peak obtain.
Yet this envelope can also one and radio-frequency input signals v
RfCorresponding signal replaces, and so, can dispense this envelope detector 1061.
In when operation, when operating when grid 105 receiving inputted signals of transistor 102, the voltage V of its drain electrode end 103
dUnderstand operation, and follow envelope V because of amplifier 1062
DyDynamically change.For the remarkable result that present embodiment produced, with below with reference to the V of figure 3A and 3B
dMeasurement figure is to further specify.
Fig. 3 A shows the V of power amplifier 100 according to an embodiment of the invention
dMeasure figure, the V in the power amplifier 200 of Fig. 3 B system demonstration prior art
dMeasure figure
Among Fig. 3 A, curve C
1Represent the drain voltage V of drain electrode end 103
dVariation, and curve C
2Represent envelope V
DyBy among Fig. 3 A as can be known, V
dMagnitude of voltage only at V
DyInput value be to just can be obviously when high-power greater than the V of a reference
FixValue significantly is lower than V under other situation
FixValue.Among Fig. 3 B, curve C
1Then represent the drain voltage V of drain electrode end 203
dVariation.By among Fig. 3 B as can be known, V
dMagnitude of voltage all obviously greater than V
FixValue.From the explanation of Fig. 3, can clearer understanding present embodiment and prior art at V
dSignificant difference on value changes.
Fig. 4 shows according to the maximum cross-pressure of common source in the power amplifier of embodiments of the invention and the prior art measurement figure with respect to power output.In Fig. 4, the maximum cross-pressure V of longitudinal axis representative drain electrode and source electrode
Ds, herein, because source ground, so, V
DsBe V
dMaximum voltage V
D, max, transverse axis is represented input power (P
Out), curve I represent power according to an embodiment of the invention send out device 100 big in drain electrode and the maximum cross-pressure voltage of source electrode and the relativeness of power output of common source (corresponding to transistor 102), and curve (II) is represented drain electrode and the maximum cross-pressure voltage of source electrode and the relativeness of power output of the common source (corresponding to transistor 202) of prior art.Curve I and II from Fig. 4, obviously as can be known, under identical power output, according to the maximum cross-pressure voltage V that embodiments of the invention produced
DsBe starkly lower than the cross-pressure voltage of prior art.Therefore, can reduce maximum cross-pressure voltage V under the average power significantly according to power amplifier of the present invention
Ds, for example, the V of curve I
D, maxMinimum value be about 0.7V, and maximum is about 2.0V, and the V of curve II
D, maxMinimum value be about 1.4V, and maximum is about 2.0V.
According to the present invention, by the dynamic biasing circuit is set, can make that the transistor drain voltage of common source is dynamically adjusted along with the RF input signal in the power amplifier, use and reduce the cross-pressure voltage of drain electrode source electrode, and be no more than normal operating voltage, so, then the transistorized life-span be can increase, and thereby the useful life and the reliability of power amplifier increased.
Though in the above description, the present invention is described with embodiment,, the invention is not restricted to the specific detail that is disclosed.For example, can between the drain electrode end of input of bias circuit 106 and transistor 102 attenuator be set, the voltage with the input of decay drain electrode end in addition, also can be set directly at attenuator in the bias circuit 106.Given this, do not departing under spirit of the present invention and appended claims and the impartial scope thereof, those skilled in the art can produce different variations, modification, substitute or the like, all belong to the scope of protection that the present invention is contained.
Claims (6)
1. power amplification circuit comprises:
One power amplifier, in order to receiving an input signal and a bias voltage signal, and in order to according to this input signal to produce an amplifying signal; And
One bias voltage adjustment unit is coupled to this power amplifier, in order to receiving this input signal, and according to this input signal producing this bias voltage signal,
Wherein, this power amplifier comprises:
One the first transistor, its grid is in order to receive this input signal; And
One transistor seconds, itself and this first transistor coupled in series, wherein the drain electrode of the source electrode of this transistor seconds and this first transistor couples, and in order to receiving this bias voltage signal, and the drain electrode of this transistor seconds is in order to export this amplifying signal.
2. power amplification circuit as claimed in claim 1, wherein this bias voltage adjustment unit comprises:
One envelope detector in order to accepting this input signal, and is exported an envelope of this input signal according to this; And
One differential amplifier in order to the voltage of the drain electrode of accepting this envelope and this first transistor, and is exported a differential amplifying signal according to this;
Wherein, this differential amplifying signal is used to as this bias voltage signal.
3. power amplification circuit as claimed in claim 1, wherein this bias voltage adjustment unit comprises:
One differential amplifier in order to the voltage of acceptance with the drain electrode of the corresponding estimated signal of this input signal and this first transistor, and is exported a differential amplifying signal according to this;
Wherein, this differential amplifying signal is used to as this bias voltage signal.
4. power amplification circuit as claimed in claim 2 also includes:
One attenuator is coupled between the drain electrode and this bias voltage adjustment unit of this first transistor, in order to the voltage in the drain electrode of this first transistor is decayed.
5. power amplification circuit as claimed in claim 3 also includes:
One attenuator is coupled between the drain electrode and this bias voltage adjustment unit of this first transistor, in order to the voltage in the drain electrode of this first transistor is decayed.
6. power amplification circuit as claimed in claim 1, wherein this first transistor is MOS (metal-oxide-semiconductor) memory or complementary metal-oxide field-effect transistor.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101288468A CN101610069B (en) | 2008-06-20 | 2008-06-20 | Power amplifier, power amplifying circuit and power amplifying method |
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|---|---|---|---|
| CN2008101288468A CN101610069B (en) | 2008-06-20 | 2008-06-20 | Power amplifier, power amplifying circuit and power amplifying method |
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| CN101610069B true CN101610069B (en) | 2011-08-24 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101807884A (en) * | 2010-04-28 | 2010-08-18 | 复旦大学 | Feed-forward noise cancellation resistance negative feedback broadband low noise amplifier |
| CN101876834B (en) * | 2010-06-23 | 2014-03-12 | 中兴通讯股份有限公司 | Tracking power supply device and control method thereof |
| CN104917467B (en) * | 2015-06-24 | 2017-08-25 | 江苏博普电子科技有限责任公司 | A kind of GaN microwave power amplifiers drain modulation circuit |
| CN110298989A (en) * | 2019-05-14 | 2019-10-01 | 北京戴纳实验科技有限公司 | A kind of laboratory safety device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3443241A (en) * | 1967-07-07 | 1969-05-06 | Us Army | High level rf transistor distortion correction circuit |
| US6784740B1 (en) * | 2002-12-20 | 2004-08-31 | Atheros Communications, Inc. | Power amplifier |
| US7164321B2 (en) * | 2003-10-14 | 2007-01-16 | Broadcom Corporation | Modulation dependent biasing for efficient and high linearity power amplifiers |
| CN101179257A (en) * | 2006-11-10 | 2008-05-14 | 日本电气株式会社 | High-frequency power amplifier improved in size and cost |
-
2008
- 2008-06-20 CN CN2008101288468A patent/CN101610069B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3443241A (en) * | 1967-07-07 | 1969-05-06 | Us Army | High level rf transistor distortion correction circuit |
| US6784740B1 (en) * | 2002-12-20 | 2004-08-31 | Atheros Communications, Inc. | Power amplifier |
| US7164321B2 (en) * | 2003-10-14 | 2007-01-16 | Broadcom Corporation | Modulation dependent biasing for efficient and high linearity power amplifiers |
| CN101179257A (en) * | 2006-11-10 | 2008-05-14 | 日本电气株式会社 | High-frequency power amplifier improved in size and cost |
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| CN101610069A (en) | 2009-12-23 |
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