CN101602479A - Capacitive sensing device and preparation method thereof - Google Patents
Capacitive sensing device and preparation method thereof Download PDFInfo
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- CN101602479A CN101602479A CNA2008101004451A CN200810100445A CN101602479A CN 101602479 A CN101602479 A CN 101602479A CN A2008101004451 A CNA2008101004451 A CN A2008101004451A CN 200810100445 A CN200810100445 A CN 200810100445A CN 101602479 A CN101602479 A CN 101602479A
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Abstract
A kind of capacitive sensing device and preparation method thereof, this capacitive sensing device comprises: a substrate, its upper surface is provided with an alignment layers, and is provided with a peristome in predeterminated position; One polysilicon layer is located on this substrate, forms a vibrating diaphragm in this peristome place, and is provided with most adjustment holes in this vibrating diaphragm; One first insulating barrier is located on this polysilicon layer, and forms a cavity portion in this vibrating diaphragm top; And a first metal layer, be located on this first insulating barrier, be provided with most through holes and connect this cavity portion; Wherein, this polysilicon layer and the first metal layer form a sense capacitance, connect a sensing circuit and carry out sensing by the vibration of vibrating diaphragm.It mainly uses polysilicon to be sacrifice layer, cooperates the use of oxide layer and alignment layers, can reach the purpose of fine etching.Use polysilicon to be vibrating diaphragm, complexed metal layer and form sense capacitance still can be set up another metal level and forms reference capacitance, and except the function of circuit requirements, the structural strength of assembly also can significantly promote.
Description
Technical field
The present invention relates to a kind of capacitive sensing device and preparation method thereof, relate in particular to that a kind of CMOS of utilization (CMOS) technology is made in a large number and the capacitive sensing device that reduces cost and preparation method thereof.
Background technology
See also Fig. 1, be the structural section of the micro-electro-mechanical microphone of prior art.As shown in the figure, it is mainly constructed and includes a silicon substrate 12, a vibrating membrane 14 and a backboard 16.Wherein, the upper and lower surface of this silicon substrate 12 is respectively equipped with a dielectric layer 121,123, and the centre offers a resonant chamber 125.Vibrating membrane 14 is by polysilicon deposition and doped with boron or phosphonium ion and form.
Then deposit a phosphorosilicate glass on the vibrating membrane 14 as sacrifice layer.On sacrifice layer, deposit the backboard 16 and a protective layer 163 of an insulating barrier 161, polysilicon and doped with boron or phosphonium ion in regular turn.Be etched in this etching protection layer afterwards again and go out two contact holes, and form metal pad 181,183, connect vibrating membrane 14 and backboard 16 respectively in each contact hole.Etching forms most sound holes 165 on backboard 16 in addition, and this sacrificial layer etching is removed.
Though the micro-electro-mechanical microphone of this structure can reach the effect of induction radio reception, so its backboard 16 mainly is made of polysilicon, and quality is comparatively fragile, damages in process easily.
In addition, its sacrifice layer adopts phosphorosilicate glass to make, and difficulty is higher when sacrifice layer is removed in etching, corrodes the other parts of assembly easily, as the backboard 16 and the vibrating membrane 14 of polysilicon, and the insulating barrier 161 that is both oxide, etched accuracy is difficult to grasp.Might cause vibrating membrane 14 in uneven thickness, even produce perforation, and the intensity of backboard 16 also can be fragile more.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of capacitive sensing device, and it mainly utilizes polysilicon to make vibrating diaphragm and forms sense capacitance with a metal level, but the structural strength of intensifying device.
Another object of the present invention is to provide a kind of capacitive sensing device, its vibrating diaphragm is provided with most and adjusts the hole, can adjust the parameters such as coefficient of elasticity of vibrating diaphragm on demand.
Another purpose of the present invention is to provide a kind of capacitive sensing device, and still can set up another metal level and form a reference capacitance with the virgin metal layer, and the further structural strength of intensifying device.
Another purpose of the present invention is to provide a kind of preparation method of capacitive sensing device, and it mainly utilizes polysilicon to make sacrifice layer, can improve etched accuracy when removing sacrifice layer.
Another purpose of the present invention is to provide a kind of preparation method of capacitive sensing device, can make the sensing apparatus of sufficient intensity, is beneficial to follow-up application and making.
Another purpose of the present invention is to provide a kind of preparation method of capacitive sensing device, uses CMOS technology to make, and capacitive sensing device can be integrated in the integrated circuit.
For achieving the above object, the invention provides a kind of capacitive sensing device, it is mainly constructed and includes: a substrate, and its upper surface is provided with an alignment layers, and is provided with a peristome in predeterminated position; One polysilicon layer is located on this substrate, forms a vibrating diaphragm in this peristome place, and is provided with most adjustment holes in this vibrating diaphragm; One first insulating barrier is located on this polysilicon layer, and forms a cavity portion in this vibrating diaphragm top; And a first metal layer, be located on this first insulating barrier, be provided with most through holes and connect this cavity portion; Wherein, this polysilicon layer and the first metal layer form a sense capacitance, can connect a sensing circuit and carry out sensing by the vibration of vibrating diaphragm.
The present invention also provides a kind of preparation method of capacitive sensing device, and it consists predominantly of the following step: a substrate is provided, and forms an alignment layers in the upper surface of this substrate; Deposit a polysilicon layer on this alignment layers, and form most etch-holes in the predeterminated position etching; Comprise each etch-hole in the default surface of this polysilicon layer and form an oxide layer; Deposition one sacrifice polysilicon layer on this oxide layer; Deposition of silica forms one first insulating barrier and covers this sacrifice layer and polysilicon layer; Deposition or sputter one the first metal layer are on this first insulating barrier; By most through holes of the predeterminated position etching of the first metal layer to this sacrifice layer; This sacrifice layer is removed in etching, forms a cavity portion; The predeterminated position of substrate is etched to this alignment layers, forms a peristome; And the alignment layers of peristome position is removed in etching.
Capacitive sensing device of the present invention uses standard CMOS process to make, so can directly capacitive sensing device be integrated in the integrated circuit when circuit is planned, not only can improve the reliability of product, and its production cost also can significantly reduce because of work simplification.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is the structural section of the micro-electro-mechanical microphone of prior art;
Fig. 2 A to Fig. 2 K is each the step schematic diagram that is respectively a preferred embodiment of the present invention;
Fig. 3 A and Fig. 3 B are the part steps schematic diagram that is respectively another embodiment of the present invention;
Fig. 4 A and Fig. 4 B are the encapsulation aspect schematic diagram that is respectively Fig. 3 B illustrated embodiment;
The structural section of Fig. 5 further embodiment of this invention;
The structural section of Fig. 6 further embodiment of this invention.
Wherein, Reference numeral:
12: silicon substrate 121: dielectric layer
123: dielectric layer 125: resonant chamber
14: vibrating membrane 16: backboard
161: insulating barrier 163: protective layer
165: sound hole 181: weld pad
183: weld pad
20: capacitive sensing device 22: substrate
221: alignment layers 223: peristome
24: polysilicon layer 241: etch-hole
243: oxide layer 245: adjust the hole
247: vibrating diaphragm 25: sacrifice layer
255: 26: the first insulating barriers of cavity portion
28: the first metal layer 281: protective layer
283: through hole
30: 32: the second insulating barriers of capacitive sensing device
343: through hole
42: encapsulated layer 44: encapsulated layer
445: groove
50: capacitive sensing device 52: flange
60: capacitive sensing device
The specific embodiment
At first, see also Fig. 2 A to Fig. 2 K, be respectively each step schematic diagram of a preferred embodiment of the present invention.As shown in the figure, the making of this example stream mainly provides a substrate 22 earlier, and deposits an alignment layers 221 in the upper surface of this substrate 22.On this alignment layers 221, deposit a polysilicon layer 24 again, shown in Fig. 2 A.
Wherein, this substrate 22 can be a silicon substrate.This alignment layers 221 may be selected to be one of them of a silicon nitride layer and a silicon dioxide layer.
After polysilicon layer 24 depositions are finished, form most etch-holes 241 in its predeterminated position etching, shown in Fig. 2 B.Because alignment layers 221 is silica or silicon nitride, and is big with the chemical characteristic difference of polysilicon, so etching can accurately reach alignment layers 221 and stop.
After etching was finished, the side that comprises each etch-hole 241 on the default surface of this polysilicon layer 24 formed an oxide layer 243, shown in Fig. 2 C.
Deposit spathic silicon forms a sacrifice layer 25 on this oxide layer 243, shown in Fig. 2 D.
Deposition of silica covers this sacrifice layer 25 and polysilicon layer 24 forms one first insulating barrier 26, shown in Fig. 2 E.Wherein this first insulating barrier 26 still can be in silica doped with boron, phosphorus and knockdown wherein one.
Deposition, evaporation or sputter form a first metal layer 28 on this first insulating barrier 26, shown in Fig. 2 F.Also can on this first metal layer 28, deposit on demand and form a protective layer 281, shown in Fig. 2 G.
After the first metal layer 28 or protective layer 281 were finished, the predeterminated position by the first metal layer 28 or protective layer 281 carried out etching again, formed most the through holes 283 that are connected to sacrifice layer 25, as Fig. 2 H institute not.
Then, sacrifice layer 25 etchings are removed with etching solution by each through hole 283 again, form a cavity portion 255, shown in Fig. 2 I.Because the present invention uses polysilicon to make sacrifice layer 25, and the periphery of sacrifice layer 25 is surrounded by silica materials such as first insulating barrier 26, oxide layer 243 and alignment layers 221 or silicon nitride material respectively, so when carrying out sacrifice layer 25 removal etchings, sacrifice layer 25 can be accurately removed, can residually also other position can be do not corroded.
After removing sacrifice layer 25, again substrate 22 is carried out etching, will remove, form a peristome 223, shown in Fig. 2 J corresponding to the part of cavity portion 25.Alignment layers 221 etchings of peristome 223 positions are removed, the part that makes polysilicon layer 24 be positioned at 223 of cavity portion 255 and peristomes forms a vibrating diaphragm 247, can finish the making of present embodiment capacitive sensing device 20, shown in Fig. 2 K again.
Wherein, the etch-hole 241 of former polysilicon layer 24 becomes adjustment hole 245.Adjust position and quantity that hole 245 is provided with, can adjust according to the coefficient of elasticity of vibrating diaphragm 247 or other parameter demand.This polysilicon layer 24 forms a sense capacitance with the first metal layer 28, the electric capacitance change that can produce according to the vibration or the distortion of vibrating diaphragm 247 and carry out sensing by a sensing circuit.
See also Fig. 3 A and Fig. 3 B, be respectively the part steps schematic diagram of another embodiment of the present invention.
The leading portion making step of present embodiment is identical with step shown in Fig. 2 A to Fig. 2 F, and it is mainly in Fig. 2
After the step of F, deposition of silica forms one second insulating barrier 32 on this first metal layer 28.And deposition, evaporation or sputter form one second metal level 34 on second insulating barrier 32.Also can on this second metal level 34, deposit on demand and form a protective layer 341, as shown in Figure 3A.
Then, the predeterminated position by second metal level 34 or protective layer 341 carries out etching, most through holes 343 that are connected to sacrifice layer 25 of formation.Sacrifice layer 25 etchings are removed with etching solution by each through hole 343 again, form a cavity portion 255.
After removing sacrifice layer 25, again substrate 22 is carried out etching, will remove, form a peristome 223, and alignment layers 221 etchings of peristome 223 positions are removed corresponding to the part of cavity portion 25.Then polysilicon layer 24 part that is positioned at 223 of cavity portion 255 and peristomes can form a vibrating diaphragm 247, and the making of present embodiment capacitive sensing device 30 is also finished, shown in Fig. 3 B.
Wherein, this polysilicon layer 24 forms a sense capacitance with the first metal layer 28, the electric capacitance change that can produce according to the vibration or the distortion of vibrating diaphragm 247 and carry out sensing by a sensing circuit.Second metal level 34 then can be selected to form a reference capacitance with the first metal layer 28, can be for sensing circuit with reference to application.This second metal level 34 also can independently form a shielding layer in response to demand, perhaps become structure of strengthening sensing apparatus or the like merely.
See also Fig. 4 A and Fig. 4 B, be respectively the encapsulation aspect schematic diagram of Fig. 3 B illustrated embodiment.As shown in the figure, capacitive sensing device 30 of the present invention can be selected different encapsulation aspects when encapsulation.
If select to form an encapsulated layer 42 in substrate 22 lower surfaces of capacitive sensing device 30 during encapsulation, then peristome 223 becomes a back of the body chamber, and the effect of resonance is provided.Each through hole 343 then becomes sound hole, supplies the variation of sound wave or air pressure to enter, and makes vibrating diaphragm produce 247 and produces vibration or distortion, shown in Fig. 4 A.
If select to form an encapsulated layer 44 during encapsulation on second metal level 34 of capacitive sensing device 30, then this moment, this cavity portion 255 became back of the body chamber, and the effect of resonance is provided.Peristome 223 then is a sound hole, for the transmission of sound wave or air pressure change, shown in Fig. 4 B.Consider the space size of cavity portion 255 and the collocation problem of resonant frequency, also can form a groove 445 of suitable size on demand in the correspondence position of encapsulated layer 44, with the cavity portion 255 common back of the body chambeies that form.
The above-mentioned aspect that respectively encapsulates also may be implemented in the embodiment shown in Fig. 2 K.
See also Fig. 5, be the structural section of further embodiment of this invention.As shown in the figure, the present invention such as Fig. 3 B illustrated embodiment also can be carried out further etching, and oxide layer 243 is removed, and become the capacitive sensing device 50 of present embodiment.Because oxide layer 243 and first insulating barrier 26 assimilation oxides will produce first insulating barrier 26 simultaneously during etching and corrode, can be in 343 formation of each through hole flange 52, can prevent that vibrating diaphragm 247 is stained with sticking.
See also Fig. 6, be the structural section of further embodiment of this invention.As shown in the figure, the capacitive sensing device 60 of present embodiment is removed the position etching of sacrifice layer 25 tops earlier and is carried out subsequent step again after forming first insulating barrier 26.
Because capacitive sensing device of the present invention uses standard CMOS process to make, so can directly capacitive sensing device be integrated in the integrated circuit when circuit is planned, not only can improve the reliability of product, its production cost also can significantly reduce because of work simplification.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.
Claims (12)
1. a capacitive sensing device is characterized in that, includes:
One substrate, its upper surface is provided with an alignment layers, and is provided with a peristome in predeterminated position;
One polysilicon layer is located on this substrate, forms a vibrating diaphragm in this peristome place, and is provided with most adjustment holes in this vibrating diaphragm;
One first insulating barrier is located on this polysilicon layer, and forms a cavity portion in this vibrating diaphragm top; And
One the first metal layer is located on this first insulating barrier, is provided with most through holes and connects this cavity portion;
Wherein, this polysilicon layer and the first metal layer form a sense capacitance, connect a sensing circuit and carry out sensing by the vibration of vibrating diaphragm.
2. capacitive sensing device according to claim 1 is characterized in that, this substrate is a silicon substrate, and this alignment layers then is silicon dioxide layer or silicon nitride layer.
3. capacitive sensing device according to claim 1 is characterized in that the upper surface of this vibrating diaphragm is provided with an oxide layer, and this first metal layer is provided with a protective layer.
4. capacitive sensing device according to claim 1 is characterized in that, this first insulating barrier is a silicon dioxide layer, and this silicon dioxide layer is doped with boron or phosphorus.
5. capacitive sensing device according to claim 1 is characterized in that, includes:
One second insulating barrier is located on this first metal layer; And
One second metal level is located on this second insulating barrier;
Each through hole runs through second insulating barrier and second metal level respectively.
6. capacitive sensing device according to claim 5 is characterized in that, this first metal layer and second metal level form a reference capacitance, and this second insulating barrier is a silicon dioxide layer, and this second metal level is provided with a protective layer.
7. the preparation method of a capacitive sensing device is characterized in that, includes the following step:
One substrate is provided, and forms an alignment layers in the upper surface of this substrate;
Deposit a polysilicon layer on this alignment layers, and form most etch-holes in the predeterminated position etching;
The side that comprises each etch-hole in the default surface of this polysilicon layer forms an oxide layer;
Deposit spathic silicon forms a sacrifice layer on this oxide layer;
Deposition of silica forms one first insulating barrier and covers this sacrifice layer and polysilicon layer;
Deposition, evaporation or sputter one the first metal layer are on this first insulating barrier;
By most through holes of the predeterminated position etching of the first metal layer to this sacrifice layer;
This sacrifice layer is removed in etching, forms a cavity portion;
The predeterminated position of substrate is etched to this alignment layers, forms a peristome; And
The alignment layers of peristome position is removed in etching.
8. preparation method according to claim 7 is characterized in that, remove the step of this sacrifice layer in this etching after, include the step that this oxide layer is removed in an etching.
9. preparation method according to claim 7 is characterized in that, this alignment layers selects to deposit a silicon dioxide layer on substrate or a silicon nitride layer forms, and the silica of this first insulating barrier then is doped with boron or phosphorus.
10. preparation method according to claim 7 is characterized in that, includes the step that forms a protective layer on this first metal layer.
11. preparation method according to claim 7 is characterized in that, this deposition, evaporation or sputter one the first metal layer include the following step after the step on this first insulating barrier:
Deposition of silica forms one second insulating barrier on this first metal layer; And
Deposition, evaporation or sputter one second metal level are on this second insulating barrier;
The most individual through holes of this predeterminated position etching by the first metal layer to the step of this sacrifice layer then is:
By most through holes of the predeterminated position etching of second metal level to this sacrifice layer.
12. preparation method according to claim 11 is characterized in that, includes a step that forms a protective layer on this second metal level.
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| CNA2008101004451A CN101602479A (en) | 2008-06-11 | 2008-06-11 | Capacitive sensing device and preparation method thereof |
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| CNA2008101004451A CN101602479A (en) | 2008-06-11 | 2008-06-11 | Capacitive sensing device and preparation method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102205940A (en) * | 2011-04-25 | 2011-10-05 | 北京理工大学 | Bicrystal electrothermal actuator for MEMS (Micro-electromechanical System) |
| CN104066040A (en) * | 2013-03-19 | 2014-09-24 | 财团法人工业技术研究院 | Pressure sensor and method for manufacturing the same |
| CN104936123A (en) * | 2015-05-22 | 2015-09-23 | 北京卓锐微技术有限公司 | Silicon capacitive microphone manufacturing method |
| CN108632689A (en) * | 2017-03-24 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | Microphone and production method |
| CN108882132A (en) * | 2017-05-11 | 2018-11-23 | 现代自动车株式会社 | microphone and its manufacturing method |
| CN110267184A (en) * | 2019-06-29 | 2019-09-20 | 瑞声科技（南京）有限公司 | MEMS microphone |
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2008
- 2008-06-11 CN CNA2008101004451A patent/CN101602479A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102205940A (en) * | 2011-04-25 | 2011-10-05 | 北京理工大学 | Bicrystal electrothermal actuator for MEMS (Micro-electromechanical System) |
| CN104066040A (en) * | 2013-03-19 | 2014-09-24 | 财团法人工业技术研究院 | Pressure sensor and method for manufacturing the same |
| CN104936123A (en) * | 2015-05-22 | 2015-09-23 | 北京卓锐微技术有限公司 | Silicon capacitive microphone manufacturing method |
| CN104936123B (en) * | 2015-05-22 | 2018-10-09 | 山东共达电声股份有限公司 | A kind of manufacturing method of silicon capacitor microphone |
| CN108632689A (en) * | 2017-03-24 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | Microphone and production method |
| CN108882132A (en) * | 2017-05-11 | 2018-11-23 | 现代自动车株式会社 | microphone and its manufacturing method |
| CN108882132B (en) * | 2017-05-11 | 2021-07-06 | 现代自动车株式会社 | Microphone and method for manufacturing the same |
| CN110267184A (en) * | 2019-06-29 | 2019-09-20 | 瑞声科技（南京）有限公司 | MEMS microphone |
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Open date: 20091216 |