CN101599513A - The ultrasonic velvet making method of solar cell piece - Google Patents
The ultrasonic velvet making method of solar cell piece Download PDFInfo
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- CN101599513A CN101599513A CNA2008100386730A CN200810038673A CN101599513A CN 101599513 A CN101599513 A CN 101599513A CN A2008100386730 A CNA2008100386730 A CN A2008100386730A CN 200810038673 A CN200810038673 A CN 200810038673A CN 101599513 A CN101599513 A CN 101599513A
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- Prior art keywords
- solar cell
- cleaning machine
- ultrasonic
- cell piece
- supersonic wave
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a kind of ultrasonic velvet making method of solar cell piece, is the mixed solution of putting into NaOH and isopropyl alcohol in the washing bucket of a supersonic wave cleaning machine, and one group of silicon chip is placed above-mentioned solution, opens supersonic wave cleaning machine and carries out making herbs into wool.The etching method of solar cell piece of the present invention utilizes the high-frequency mechanical vibration of supersonic wave cleaning machine, propagate in the liquid through vibration plate, ultrasonic wave in solution energy density interphase ground to previous irradiation, continuously impacting the attachment of body surface, thereby bubble is peeled off rapidly sodium hydroxide solution can be corroded better at silicon chip surface, thereby improved the making effect of matte greatly.
Description
Technical field
The present invention relates to the manufacture craft of solar cell piece, relate in particular to a kind of ultrasonic velvet making method of solar cell piece.
Background technology
Solar cell is an electric energy with solar energy converting as emerging clean reproducible energy directly because of having, and the life-span is long, it is simple to safeguard, can realize advantage such as unattended operation and get most of the attention.Solar power supply system has been obtained application more and more widely.
How improving the silicon chip conversion efficiency is the emphasis of solar cell research, and making matte on the crystal-silicon solar cell surface is an important method that improves the solar cell conversion efficiency, is widely used in the monocrystalline silicon production.Matte make be according to aqueous slkali to silicon chip anisotropic etch characteristic, by form the pyramid structure matte of random distribution at monocrystalline silicon surface, increase the reflection-absorption number of times of light, thereby reduce the surface reflectivity of solar cell effectively at silicon chip surface.In prior art industrial production field, what the monocrystalline silicon surface corrosion was adopted is NaOH and aqueous isopropanol system.When making matte, silicon can produce a large amount of hydrogen with the sodium hydroxide solution reaction, and these hydrogen gas bubbles are easily attached to silicon chip surface, thereby has influenced the effect of matte making greatly.
Summary of the invention
Purpose of the present invention in order to solve the problems referred to above that prior art exists, provides a kind of ultrasonic velvet making method of solar cell piece exactly.
In order to achieve the above object, the present invention has adopted following technical scheme: a kind of ultrasonic velvet making method of solar cell piece, it is the mixed solution of in the washing bucket of a supersonic wave cleaning machine, putting into NaOH and isopropyl alcohol, one group of silicon chip is placed above-mentioned solution, open supersonic wave cleaning machine and carry out making herbs into wool.
In the mixed solution of described NaOH and isopropyl alcohol, concentration sodium hydroxide is 0.95%-1.05%, and the concentration of isopropyl alcohol is 4.95%-5.05%.
The operating frequency of described supersonic wave cleaning machine is 30-40KHz.
The washing bucket volume of described supersonic wave cleaning machine is 100 liters, and described one group of silicon chip is 150.
The etching method of solar cell piece of the present invention utilizes the high-frequency mechanical vibration of supersonic wave cleaning machine, propagate in the liquid through vibration plate, ultrasonic wave in solution energy density interphase ground to previous irradiation, continuously impacting the attachment of body surface, thereby bubble is peeled off rapidly sodium hydroxide solution can be corroded better at silicon chip surface, thereby improved the making effect of matte greatly.
Embodiment
The ultrasonic velvet making method of solar cell piece of the present invention, be in the washing bucket of the supersonic wave cleaning machine that an operating frequency is 30-40KHz, put into NaOH and isopropyl alcohol mixed solution (wherein, concentration sodium hydroxide is 0.95%-1.05%, and the concentration of isopropyl alcohol is 4.95%-5.05%).One group of silicon chip is placed above-mentioned solution, open supersonic wave cleaning machine and carry out making herbs into wool.
The washing bucket volume of the supersonic wave cleaning machine that the present invention adopts is 100 liters, once puts into 500 silicon chips and carries out making herbs into wool.As adopt the supersonic wave cleaning machine of different volumes washing bucket, also put into silicon chip in this ratio.
We carry out making herbs into wool and do not adopt supersonic wave cleaning machine to carry out two kinds of methods of making herbs into wool the employing supersonic wave cleaning machine, and each has carried out contrast test with 500 of silicon chips, and the test average result is as shown in table 1.
Table 1
| Type | Thickness (μ m) | Minority carrier life time (μ s) | Reflectivity (%) | Surface condition |
| Use ultrasonic velvet making | 181 | 1.64 | 14.21 | No color differnece, immaculate |
| Do not use ultrasonic velvet making | 179 | 1.43 | 14.98 | Spottiness |
By table 1 as seen, the test result of use supersonic wave cleaning machine making herbs into wool slightly is better than not using the effect of supersonic wave cleaning machine making herbs into wool, and the surface condition of silicon chip has clear improvement after the making herbs into wool of use supersonic wave cleaning machine.This is owing in time driven attached to the bubble of silicon chip surface in the course of reaction, makes reaction carry out smoothly.
Claims (4)
1, a kind of ultrasonic velvet making method of solar cell piece is characterized in that: be the mixed solution of putting into NaOH and isopropyl alcohol in the washing bucket of a supersonic wave cleaning machine, one group of silicon chip is placed above-mentioned solution, open supersonic wave cleaning machine and carry out making herbs into wool.
2, the ultrasonic velvet making method of solar cell piece as claimed in claim 1 is characterized in that: in the mixed solution of described NaOH and isopropyl alcohol, concentration sodium hydroxide is 0.95%-1.05%, and the concentration of isopropyl alcohol is 4.95%-5.05%.
3, the ultrasonic velvet making method of solar cell piece as claimed in claim 1 is characterized in that: the operating frequency of described supersonic wave cleaning machine is 30-40KHz.
4, the ultrasonic velvet making method of solar cell piece as claimed in claim 1 is characterized in that: the washing bucket volume of described supersonic wave cleaning machine is 100 liters, and described one group of silicon chip is 150.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100386730A CN101599513A (en) | 2008-06-06 | 2008-06-06 | The ultrasonic velvet making method of solar cell piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100386730A CN101599513A (en) | 2008-06-06 | 2008-06-06 | The ultrasonic velvet making method of solar cell piece |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101599513A true CN101599513A (en) | 2009-12-09 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008100386730A Pending CN101599513A (en) | 2008-06-06 | 2008-06-06 | The ultrasonic velvet making method of solar cell piece |
Country Status (1)
| Country | Link |
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| CN (1) | CN101599513A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102315319A (en) * | 2011-07-07 | 2012-01-11 | 苏州赤诚洗净科技有限公司 | Symmetrical texturing device for solar cell silicon chip |
| CN103280396A (en) * | 2013-05-17 | 2013-09-04 | 浙江正泰太阳能科技有限公司 | Processing method for silicon slice after RIE (Reactive Ion Etching) texturing |
| CN105932096A (en) * | 2016-05-16 | 2016-09-07 | 杭州电子科技大学 | Polysilicon surface light trapping microstructure processing method |
-
2008
- 2008-06-06 CN CNA2008100386730A patent/CN101599513A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102315319A (en) * | 2011-07-07 | 2012-01-11 | 苏州赤诚洗净科技有限公司 | Symmetrical texturing device for solar cell silicon chip |
| CN102315319B (en) * | 2011-07-07 | 2012-12-12 | 苏州赤诚洗净科技有限公司 | Symmetrical texturing device for solar cell silicon chip |
| CN103280396A (en) * | 2013-05-17 | 2013-09-04 | 浙江正泰太阳能科技有限公司 | Processing method for silicon slice after RIE (Reactive Ion Etching) texturing |
| CN103280396B (en) * | 2013-05-17 | 2016-08-10 | 浙江正泰太阳能科技有限公司 | A kind of processing method after silicon chip RIE making herbs into wool |
| CN105932096A (en) * | 2016-05-16 | 2016-09-07 | 杭州电子科技大学 | Polysilicon surface light trapping microstructure processing method |
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| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20091209 |