CN101599401B - Method for inhibiting oscillation of binode magnetic injection gun region of gyrotron amplifier - Google Patents
Method for inhibiting oscillation of binode magnetic injection gun region of gyrotron amplifier Download PDFInfo
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- CN101599401B CN101599401B CN200810114538XA CN200810114538A CN101599401B CN 101599401 B CN101599401 B CN 101599401B CN 200810114538X A CN200810114538X A CN 200810114538XA CN 200810114538 A CN200810114538 A CN 200810114538A CN 101599401 B CN101599401 B CN 101599401B
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- binode
- attenuating material
- injection gun
- metal surface
- anode
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Abstract
The invention discloses a method for inhibiting the oscillation of a binode magnetic injection gun region of a gyrotron amplifier. The method comprises the following steps: performing roughening processing to the metal surface of the outer wall of a first anode; coating a layer of attenuating material on the metal surface of the outer wall of the first anode subject to the roughening processing; and placing a sample coated with the attenuating material into a hydrogen furnace for sintering at high temperature. The invention effectively inhibits the oscillation of the binode magnetic injection gun region of the gyrotron amplifier and avoids the harm to the stable work of the gyrotron amplifier.
Description
Technical field
The present invention relates to the electron gun technical field in the microwave vacuum device, relate in particular to a kind of method that suppresses the binode magnetic injection gun region of gyrotron amplifier vibration.
Background technology
Gyrotron amplifier has advantages such as high-peak power, high-average power and bandwidth in millimere-wave band, have a wide range of applications in fields such as high-performance millimetre-wave radar, electronic countermeasures, communication and high energy acclerators, be a kind of coherent source that receives much attention in the high-power microwave source.The gyrotron amplifier electron gun provides the electron beam that carries out mutual effect with radio-frequency field.
As shown in Figure 1, Fig. 1 is the structural representation of gyrotron amplifier binode magnetic injection gun, and wherein, 1 is negative electrode, and 2 is the first anode, and 3 is second plate, and 4 is the ceramic insulation section, and 5 are the prefocusing utmost point, and 6 is the back focusing electrode.
Please refer to Fig. 1, electronics that the gyrotron amplifier binode magnetic injection gun provides is annotated, come out to enter the adiabatic compression section from cathode emission before, quicken through the first anode and second plate.This zone only has the electromagnetostatic field not have radio-frequency field in theory, can not be marked with any premodulated to electronics.Yet this structure is a similar coaxial cavity structure, at the relative TEM coaxial mould that forms with second plate of first anode lateral surface, at the first anode and second plate gap location, forms TM easily
01Or TM
11Pattern can work the mischief to the gyrotron amplifier steady operation fully, thereby must be suppressed.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of method that suppresses the binode magnetic injection gun region of gyrotron amplifier vibration, to suppress the vibration of binode magnetic injection gun region of gyrotron amplifier, avoid the harm that the gyrotron amplifier steady operation is caused.
(2) technical scheme
For achieving the above object, the invention provides a kind of method that suppresses the binode magnetic injection gun region of gyrotron amplifier vibration, this method comprises:
Roughened is carried out in first anode lateral wall metal surface;
First anode lateral wall metal surface behind roughening is coated with one deck attenuating material, and this attenuating material is FeSiAl, perhaps for suppressing the nonmagnetic attenuating material of the higher-order of oscillation;
The sample that scribbles attenuating material is put into hydrogen stove high temperature sintering.
In the such scheme, described roughened being carried out in first anode lateral wall metal surface, is to carry out hacking in first anode lateral wall metal surface.
In the such scheme, the described sample that will scribble attenuating material is put into hydrogen stove high temperature sintering, is the sample that scribbles attenuating material to be put into the hydrogen stove carry out sintering under 1000 ℃.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
The present invention is by carrying out roughened to first anode lateral wall metal surface, first anode lateral wall metal surface behind roughening is coated with one deck attenuating material then, and the sample that will scribble attenuating material is put into hydrogen stove high temperature sintering, suppress the vibration of binode magnetic injection gun region of gyrotron amplifier effectively, avoided the harm that the gyrotron amplifier steady operation is caused.
Description of drawings
Fig. 1 is the structural representation of gyrotron amplifier binode magnetic injection gun;
Fig. 2 is the method flow diagram of inhibition binode magnetic injection gun region of gyrotron amplifier vibration provided by the invention;
Fig. 3 is the schematic diagram of binode magnetic injection gun first anode surface roughening;
Fig. 4 is the oscillation mode schematic diagram before binode magnetic injection gun is coated with decay;
Fig. 5 is the schematic diagram after adopting the present invention vibration suppressing to binode magnetic injection gun region of gyrotron amplifier;
Fig. 6 is the schematic diagram behind the first anode sintering attenuating material of the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Please refer to Fig. 1, the present invention forms coaxial these characteristics according to field structure at first anode lateral surface and second plate, adds decay herein and suppresses the TEM mould, eliminates the TM mould at anode gap place.
As shown in Figure 2, Fig. 2 is the method flow diagram of inhibition binode magnetic injection gun region of gyrotron amplifier vibration provided by the invention, and this method comprises:
In the above-mentioned steps 1 roughened being carried out in first anode lateral wall metal surface, is to carry out hacking in first anode lateral wall metal surface, specifically as shown in Figure 3.
One deck attenuating material that is coated with in first anode lateral wall metal surface in the above-mentioned steps 2 is generally FeSiAl, but attenuating material is not limited to the FeSiAl attenuating material, can also can suppress the nonmagnetic attenuating material of the higher-order of oscillation for other.In addition, though the FeSiAl attenuating material is magnetic, uses can not produce at this specific position and destroy electron trajectory.Material itself is in the relative position of negative electrode, and ambient temperature can reach several Baidu, though do not reach the Curie point of material, the effect of demagnetization can exist; Moreover material thickness is limited, magnetic a little less than, simultaneously magnetic field, cathodic region is very strong, greater than 1000 Gausses, the attenuating material magnetic action is just very limited so.Fig. 4 and Fig. 5 show binode magnetic injection gun respectively and are coated with the oscillation mode schematic diagram before the decay and adopt technical solution of the present invention that vibration suppresses later schematic diagram to binode magnetic injection gun region of gyrotron amplifier;
The sample that will scribble attenuating material in the above-mentioned steps 3 is put into hydrogen stove high temperature sintering, is the sample that scribbles attenuating material to be put into the hydrogen stove carry out sintering under 1000 ℃.Specifically as shown in Figure 6, Fig. 6 is the schematic diagram behind the first anode sintering attenuating material of the present invention.
Through this damped system, the TM mould field at anode gap place has been excluded, and coaxial mould has also been played inhibitory action.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (3)
1. one kind is suppressed the method that binode magnetic injection gun region of gyrotron amplifier vibrates, and it is characterized in that this method comprises:
Roughened is carried out in first anode lateral wall metal surface;
First anode lateral wall metal surface behind roughening is coated with one deck attenuating material, and this attenuating material is FeSiAl, perhaps for suppressing the nonmagnetic attenuating material of the higher-order of oscillation;
The sample that scribbles attenuating material is put into hydrogen stove high temperature sintering.
2. the method for inhibition binode magnetic injection gun region of gyrotron amplifier vibration according to claim 1, it is characterized in that, described roughened being carried out in first anode lateral wall metal surface, is to carry out hacking in first anode lateral wall metal surface.
3. the method for inhibition binode magnetic injection gun region of gyrotron amplifier vibration according to claim 1, it is characterized in that, the described sample that will scribble attenuating material is put into hydrogen stove high temperature sintering, is the sample that scribbles attenuating material to be put into the hydrogen stove carry out sintering under 1000 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810114538XA CN101599401B (en) | 2008-06-06 | 2008-06-06 | Method for inhibiting oscillation of binode magnetic injection gun region of gyrotron amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810114538XA CN101599401B (en) | 2008-06-06 | 2008-06-06 | Method for inhibiting oscillation of binode magnetic injection gun region of gyrotron amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101599401A CN101599401A (en) | 2009-12-09 |
| CN101599401B true CN101599401B (en) | 2010-11-03 |
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ID=41420789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810114538XA Expired - Fee Related CN101599401B (en) | 2008-06-06 | 2008-06-06 | Method for inhibiting oscillation of binode magnetic injection gun region of gyrotron amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101599401B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102737927A (en) * | 2011-04-07 | 2012-10-17 | 中国科学院电子学研究所 | Double electron beam electron gun and gyrotron |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5814939A (en) * | 1996-02-12 | 1998-09-29 | Chu; Kwo R. | Mechanically tunable magnetron injection gun (MIG) |
-
2008
- 2008-06-06 CN CN200810114538XA patent/CN101599401B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5814939A (en) * | 1996-02-12 | 1998-09-29 | Chu; Kwo R. | Mechanically tunable magnetron injection gun (MIG) |
Non-Patent Citations (3)
| Title |
|---|
| JP昭60-195844A 1985.10.04 |
| 徐寿喜 等.8mm二次谐波回旋速调管放大器双阳极磁控注入电子枪的设计.强激光与粒子束.2005,17(1),104-108. |
| 徐寿喜等.8mm二次谐波回旋速调管放大器双阳极磁控注入电子枪的设计.强激光与粒子束.2005,17(1),104-108. * |
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| CN101599401A (en) | 2009-12-09 |
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