CN101590999B - Micro cantilever beam driving member based on antiferroelectric thick film field induced phase transition strain effect - Google Patents
Micro cantilever beam driving member based on antiferroelectric thick film field induced phase transition strain effect Download PDFInfo
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- CN101590999B CN101590999B CN2009100745738A CN200910074573A CN101590999B CN 101590999 B CN101590999 B CN 101590999B CN 2009100745738 A CN2009100745738 A CN 2009100745738A CN 200910074573 A CN200910074573 A CN 200910074573A CN 101590999 B CN101590999 B CN 101590999B
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Abstract
The invention relates to a driving member for a micro actuator, in particular to a micro cantilever beam driving member based on an antiferroelectric thick film field induced phase transition strain effect, which solves the problems existing in the driving member of the prior actuator of slow response, small driving displacement and the like. The method for preparing the member adopts the following steps: (1) preparing a precursor sol of a lead based antiferroelectric material and a PbO sol; (2) preparing a thick film of the lead based antiferroelectric material on a Pt metallic layer of a supporting substrate; (3) spin-coating the PbO sol on the thick film of the lead based antiferroelectric material, and carrying out the annealing treatment; (4) sputtering a metallic layer on the thick film of the lead based antiferroelectric material, which is used as a top electrode, and a pressure welding point; and (5) corroding the back surface of the support substrate, and reducing the thickness of the middle of the support substrate; etching the thick film of the lead based antiferroelectric material and the front face of the middle part of the support substrate to form a peripheral substrate and a cantilever beam structure connected with the single end of the peripheral substrate. The driving member has the advantages of having a simple process and structure, realizing the application of the antiferroelectric material in the field of the driving members for the micro actuator, and providing a completely new idea for designing and manufacturing the micro driving member with quick response and large displacement.
Description
Technical field
The present invention relates to the drive member of microactrator, be specially a kind of micro cantilever beam driving member based on antiferroelectric thick film field induced phase transition strain effect.
Background technology
MEMS (micro electro mechanical system) (MEMS) is to use the modern information technologies newest fruits and the forward position research field of a multidisciplinary intersection growing up, and highly the realization of intelligent, integrated MEMS (micro electro mechanical system) must depend on based on the little member of new material, new technology, new principle, new effect and the novelty of micro element system and explore and exploitation.Microactrator is as the core movable member among the MEMS, it mainly is to utilize different power conversion mechanism, realize the holding function of specific behavior, both can constitute the power section of micromechanics, also can become the operation or the actuator of micromechanics, the technical indicators such as reliability of the size of its actuating range, the height of efficiency of movement, action have determined the success or failure of system.
At present, the kind of microactrator mainly comprises Micropump, the little valve that is applied to fluid control, the adjustable micro mirror of ray machine electric system, optical switch, and the micro motor in dynamo-electric field, micro positioner, microrelay, micro-clipper etc.That the type of drive of microactrator has related generally to is electrostatic, electromagnetism/magnetostriction type, piezoelectric formula and marmem diaphragm type etc.Electrostatic driver exists driving voltage height, deficiency that actuating force is little, needs very accurate design and processing just can produce narrow and small space to produce higher actuating force; Electromagnetism/magnetostriction type driver exists sizable manufacturing process difficulty on the arranging of little processing of little coil and magnet, conduction, insulating material etc.; Marmem (TiNi, CuAlNi and CuZnAl alloy etc.) is because it has very strong energy storage and transmittability, it is used in microactrators such as Micropump, micro-flowmeter, micro-clipper, but its low response speed has influenced execution efficient greatly.It is to utilize piezoelectric (PbZr that the piezoelectric formula drives
xTi
1-xO
3, ZnO etc.) inverse piezoelectric effect, in the moment that applies electric field, make the controlled strain of material production and a kind of type of drive of realizing.Piezoelectric formula driving element has that volume is little, resolution is high, response speed soon, do not generate heat, low energy consumption, no electromagnetic interference and I/O receive much attention for distinct advantages such as linearities, but low output shift quantity hampers the extensive use of such type of drive always.
And in recent years, antiferroelectric functional material is because its unusual transformation behavior characteristic and potential application background especially are subjected to numerous researchers' favor.For antiferroelectric materials, near antiferroelectric state (AFE) changes the phase boundary of ferroelectric state (FE) into, has the abundant structures phase, under the effect of extra electric field, can induce to produce the AFE-FE cholesteric-nematic transition, because the cellular volume ratio antiferroelectric phase material of ferroelectric phase material is big, therefore when undergoing phase transition, be accompanied by the variation of material volume, thereby the field that causes material causes strain effect.This field of antiferroelectric materials causes the dependent variable that strain effect produces can be better than the inverse piezoelectric effect of piezoelectric to a great extent up to more than 0.8%, as W.Y.Pan etc. at research (Pb, La) (Zr, Sn, Ti) O
3During the AFE-FE phase transformation of antiferroelectric ceramic, record its dependent variable and reach 0.85%, Pb (Zr, Sn, Ti) O that research such as B.M.Xu report La or Nb mix and optimize
3Anti-ferroelectric thin film used and phase transition strain amount thick-film material also can reach 0.42% and 0.48% respectively, and typical PZT relaxation sections electroceramics is generally only had about 0.1% by the dependent variable that inverse piezoelectric effect causes.Simultaneously, the transformation behavior of antiferroelectric materials can be regulated and control by extra electric field, the polarization intensity that phase transformation causes changes and longitudinal strain belongs to the transition behavior, but phase transition strain effect has good switching characteristic, and switching response speed is fast, and W.Y.Pan etc. studies show that (Pb, La) (Zr, Sn, Ti) O
3The phase transformation of antiferroelectric ceramic block materials is about 2 μ s switching time, and for (Pb, La) (Zr, Sn, Ti) O
3The response speed of reverse ferroelectric film membrane material is then faster, can reach in the 300ns magnitude.Therefore, how antiferroelectric functional material is applied to the drive member of microactrator, becomes present numerous researchers' emphasis research topic.
Summary of the invention
The present invention provides a kind of micro cantilever beam driving member based on antiferroelectric thick film field induced phase transition strain effect with quick response and big displacement quantity characteristic for technical bottleneck problems such as there are the driving voltage height in the drive member that solves existing microactrator, response speed is slow, response frequency is low, drive displacement is little, manufacturing process is complicated and control precision is low.
The present invention adopts following technical scheme to realize: based on the micro cantilever beam driving member of antiferroelectric thick film field induced phase transition strain effect, according to following processing step processing and manufacturing:
1. be that lead base antiferroelectric materials precursor colloidal sol and the concentration of 0.2mol/l～0.6mol/l is the PbO colloidal sol of 0.2mol/l～0.4mol/l with sol-gel technology technology compound concentration; Described sol-gel technology technology is a known technology, and lead base antiferroelectric materials colloidal sol and PbO colloidal sol how to prepare desired concn are known for those skilled in the art;
2. be coated with the silica-based or Pt/TiO of Pt metal level with upper surface
2/ SiO
2/ Si is as support base, and the lead base antiferroelectric materials precursor colloidal sol of with the glue speed of revolving of 2000～4000r/min 1. step being prepared by sol evenning machine is spun on the Pt metal level of support base, and revolving the glue time is 10s～30s; And behind gluing, place tube furnace to carry out the heat treatment of 8～20min support base with 400 ℃～600 ℃ temperature, after the heat treatment, by taking out in the tube furnace, be cooled to room temperature, repeating above-mentioned glue, the Technology for Heating Processing step of revolving, is the lead base antiferroelectric materials thick film of 1 μ m～10 μ m until obtain thickness on the Pt of support base metal level;
3. the PbO colloidal sol of with the glue speed of revolving of 2000～4000r/min 1. step being prepared by sol evenning machine is spun on the lead base antiferroelectric materials thick film, and revolving the glue time is 10s～20s.Then, place tube furnace to carry out annealing in process support base, annealing temperature is 650 ℃～750 ℃, and duration 20min～40min after the annealing in process, by taking out in the tube furnace, places air to be cooled to room temperature; The PbO colloidal sol that is spun on the lead base antiferroelectric materials thick film plays regulating and controlling effect to the Pb volatile component in the lead base antiferroelectric materials thick film, reduces the volatilization of Pb component in the lead base antiferroelectric materials thick film.
4. utilize the figure that defines micro-cantilever on the lead base antiferroelectric materials thick film of photoetching process after 3. handling through step, and be the metal level of 100nm～300nm according to the figure sputtering sedimentation thickness of micro-cantilever, this metal level is as top electrode, and the Pt metal level of lead base antiferroelectric materials thick film below is as bottom electrode; And sputtering sedimentation is respectively applied for the pressure welding point that is connected with upper and lower electrode on the lead base antiferroelectric materials thick film after 3. handling through step, and sputtering sedimentation is realized the metal level that bottom electrode is connected with corresponding bonding point on the support base side end face;
Step realizes being connected of bottom electrode and corresponding bonding point in the mode of sputtering sedimentation metal level on the support base side end face in 4., make the pressure welding point of bottom electrode and the pressure welding point of top electrode be in same plane, be convenient to the welding conductive metal silk, realize being connected with the good of external circuit.
5. utilize back-etching technology that the support base back side is corroded, make the support base interior thickness reduce to 10 μ m～50 μ m; 4. the micro-cantilever figure that utilizes photoetching process to define in according to step, with the front etching technics to lead base antiferroelectric materials thick film, and the support base middle part carry out etching, form peripheral pedestal, and and the single-ended cantilever beam structure that links to each other of peripheral pedestal.
For micro cantilever beam driving member of the present invention, when applying 20V～200V bias direct current voltage between bottom electrode thereon,, upper and lower interelectrode lead base antiferroelectric materials thick film is under the electric field induction, antiferroelectric-ferroelectric structural phase transition can take place, cause the strain effect of lead base antiferroelectric materials thick film, micro cantilever structure is moved, thereby realize the driving behavior of micro cantilever structure.
Compared with prior art, the present invention utilizes the MEMS micromachining technology that the height of antiferroelectric materials and silicon-based semiconductor material is integrated, and with micro cantilever structure as the mechanical component form, utilize the high-speed switch characteristic and the Da Chang of lead base antiferroelectric materials electric field-induced phase transition to cause strain effect, realize the driving behavior of micro cantilever beam driving member of the present invention.Advantage is: 1, micro cantilever structure is as using basic structural unit quite widely in the MEMS (micro electro mechanical system), especially mechanical driving member, be usually used in the MEMS sensor and actuator, its structural design and process for machining and manufacturing are mature and stable, can satisfy different little drive member structure processing requests, can guarantee the stability of little drive member processing and realize low-cost batch production; And the action of micro-cantilever is accurate and low-power consumption, and the driving effect when studying as mechanical driving member is easy to observation.2, the lead base antiferroelectric materials changes near the phase boundary of ferroelectric state in antiferroelectric state, has the abundant structures phase, under the effect of extra electric field, induce and produce antiferroelectric-ferroelectric phase transition strain effect, this strain effect that change to be produced by the material phase structure obviously is better than the inverse piezoelectric effect of present piezoelectric, and dependent variable is up to more than 0.8%, and has phase transformation switching characteristic fast, response speed reaches hundred ns magnitudes, can realize the big displacement quantity and the fast response characteristic of micro cantilever beam driving member.3, the lead base antiferroelectric materials is applied to micro cantilever beam driving member of the present invention with bulk structure, for bulk structure, has better dielectric property, bigger actuating force and the compression strength of Geng Gao more than membrane structure; And than the ceramic block structure, bulk structure has absolute predominance aspect the phase transformation driver's valve threshold voltage, combines with MEMS technology with silicon-base plane easilier.For realizing the well integrated of lead base antiferroelectric materials and silicon-based semiconductor material, lead base antiferroelectric materials bulk structure realizes with the sol-gel technology technology, its stoichiometric proportion precise control, the film forming area is big and evenly, the technical process temperature is low, equipment is simple.
Technology of the present invention, simple in structure, the reliability height is easily realized mass production, has realized the application of antiferroelectric functional material in microactrator drive member field, for design and the manufacturing that realizes quick response, the little drive member of big displacement quantity provides new thought.
Description of drawings
Fig. 1 is the structural representation of micro cantilever beam driving member of the present invention;
Fig. 2 is the A-A profile of Fig. 1;
Among the figure: the 1-pressure welding point; The 2-Pt metal level; 3-lead base antiferroelectric materials thick film; The 4-top electrode; The 5-metal level; The peripheral pedestal of 6-; The 7-cantilever beam structure; The 8-pressure welding point.
Embodiment
Based on the micro cantilever beam driving member of antiferroelectric thick film field induced phase transition strain effect, according to following processing step processing and manufacturing:
1., be the lead base antiferroelectric materials precursor colloidal sol of 0.2mol/l～0.6mol/l and the PbO colloidal sol that concentration is 0.2mol/l～0.4mol/l with sol-gel technology technology compound concentration;
2., be coated with the silica-based or Pt/TiO of Pt metal level with upper surface
2/ SiO
2/ Si is as support base, and the lead base antiferroelectric materials precursor colloidal sol of with the glue speed of revolving of 2000～4000r/min 1. step being prepared by sol evenning machine is spun on the Pt metal level 2 of support base, and revolving the glue time is 10s～30s; And behind gluing, place tube furnace to carry out the heat treatment of 8～20min support base with 400 ℃～600 ℃ temperature, after the heat treatment, by taking out in the tube furnace, be cooled to room temperature, repeating above-mentioned glue, the Technology for Heating Processing step of revolving, is the lead base antiferroelectric materials thick film 3 of 1 μ m～10 μ m until obtain thickness on the Pt of support base metal level 2;
3., the PbO colloidal sol of with the glue speed of revolving of 2000～4000r/min 1. step being prepared by sol evenning machine is spun on the lead base antiferroelectric materials thick film 3, revolving the glue time is 10s～20s, then, place tube furnace to carry out annealing in process support base, annealing temperature is 650 ℃～750 ℃, and duration 20min～40min is after the annealing in process, by taking out in the tube furnace, place air to be cooled to room temperature;
4. utilize the figure that defines micro-cantilever on the lead base antiferroelectric materials thick film 3 of photoetching process after 3. handling through step, and be the metal level of 100nm～300nm according to the figure sputtering sedimentation thickness of micro-cantilever, this metal level is as top electrode 4, and the Pt metal level 2 of lead base antiferroelectric materials thick film 3 belows is as bottom electrode; And sputtering sedimentation is respectively applied for the pressure welding point 1,8 that is connected with upper and lower electrode on the lead base antiferroelectric materials thick film 3 after 3. handling through step, and sputtering sedimentation is realized the metal level 5 that bottom electrode is connected with corresponding bonding point 8 on the support base side end face;
5. utilize back-etching technology that the support base back side is corroded, make the support base interior thickness reduce to 10 μ m～50 μ m; 4. the micro-cantilever figure that utilizes photoetching process to define in according to step, with the front etching technics to lead base antiferroelectric materials thick film 3, and the support base middle part carry out etching, form peripheral pedestal 6, and and the single-ended cantilever beam structure that links to each other 7 of peripheral pedestal.As shown in Figure 1, 2.
Described lead base antiferroelectric materials is selected (Pb for use
1-3x/2La
x) (Zr
1-y-zSn
zTi
y) O
3Antiferroelectric materials, wherein, 0.01≤x≤0.04,0.02≤y≤0.10,0≤z≤0.40 is hereinafter to be referred as PLZST; With sol-gel technology technology preparation PLZST colloidal sol, for those skilled in the art, can adopt compound not of the same race to realize as presoma, when preparation PLZST colloidal sol, select lead acetate (C for use among the present invention
4H
6O
4Pb3H2O), lanthanum acetate (C
9H
9LaO
6), tin acetate (Sn (CH
3COO)
2), zirconium iso-propoxide (Zr (OCH
2CH
2CH
3)
4) and titanium propanolate (Ti[OCH (CH
3)
2]
4) as precursor, with acetate, ethylene glycol ethyl ether, acetylacetone,2,4-pentanedione and deionized water is solvent, and lactic acid is stabilizer, and ethylene glycol is dry controlling agent, as for concrete as how the sol-gel technology technology prepare, be known for those skilled in the art.
Sputtering sedimentation on the support base side end face in order to realize metal level 5 that bottom electrode is connected with corresponding bonding point 9 and generally to select metal A u or Pt for use as the metal level of top electrode 4;
Step 5. in, with 30% (wt)～50% (wt) KOH, 5% (wt)～10% (wt) aqueous isopropanol back-etching technology is implemented at the support base back side; 4. the micro-cantilever figure that utilizes photoetching process to define in according to step, at first, with V (HCl): V (HNO
3): V (H
2O)=30～60: 2～5: 40～60 etching solution carries out wet etching to the lead base antiferroelectric materials thick film on the support base, then, with deep reaction ion etching technology or surperficial sacrificial layer technology etching is proceeded at the support substrate middle part, formed peripheral pedestal, reach and the single-ended cantilever beam structure that links to each other of peripheral pedestal.
According to the dimensional requirement of micro cantilever beam driving member, with processing step processing and manufacturing micro cantilever beam driving member of the present invention the time, generally requiring beam length is 600 μ m～1000 μ m, and deck-siding is 100 μ m～300 μ m, and beam is thick to be 15 μ m～60 μ m.
Once more the processing step of micro cantilever beam driving member of the present invention is described in detail with a specific process; Based on the micro cantilever beam driving member of antiferroelectric thick film field induced phase transition strain effect, according to following processing step processing and manufacturing:
1. prepare (the Pb of 30ml, 0.3mol/l
0.97La
0.02) (Zr
0.85Sn
0.13Ti
0.02) O
3Antiferroelectric materials precursor colloidal sol, and the PbO colloidal sol of 0.4mol/l; Wherein, (Pb
0.97La
0.02) (Zr
0.85Sn
0.13Ti
0.02) O
3The process for preparation of antiferroelectric materials precursor colloidal sol is as follows: according to (Pb
0.97La
0.02) (Zr
0.85Sn
0.13Ti
0.02) O
3Stoichiometric proportion, take by weighing 3.6713g C
4H
6O
4Pb3H
2O, 0.0569g C
9H
9LaO
6, 0.4172gSn (CH
3COO)
4Place beaker, add acetate 15ml, add thermal agitation 30min at 110 ℃, room temperature is put in cooling, adds 3.5799gZr (OCH then successively
2CH
2CH
3)
4, 0.0527gTi[OCH (CH
3)
2]
4, add a certain amount of deionized water (water is 30 with plumbous mol ratio) simultaneously, continue at room temperature to stir 30min, in order to improve its stability, add continue to stir behind a spot of lactic acid 20min (with the mol ratio of lead be 1); At the ethylene glycol of plumbous moles such as adding, stir 20min simultaneously then; Add isopyknic acetate and ethylene glycol ethyl ether at last colloid is diluted to 0.3mol/l, filter in drop bottle with the middling speed quantitative filter paper, it is stand-by to display 24h.
2. with Pt/TiO
2/ SiO
2/ Si is as support base, by the revolve (Pb that glue speed 1. prepare step of sol evenning machine with 3000r/min
0.97La
0.02) (Zr
0.85Sn
0.13Ti
0.02) O
3Colloidal sol is spun on the Pt metal level of support base, and revolving the glue time is 20s; And behind gluing, place tube furnace to carry out the heat treatment of 10min support base, after the heat treatment with 450 ℃ temperature, by taking out in the tube furnace, being cooled to room temperature, repeating above-mentioned glue, the Technology for Heating Processing step of revolving, is (the Pb of 5 μ m until obtain thickness on the Pt of support base metal level
0.97La
0.02) (Zr
0.85Sn
0.13Ti
0.02) O
3Thick film;
3. the PbO colloidal sol of the 0.4mol/l that 1. step is prepared with the even glue speed of 3000r/min by sol evenning machine is spun on (Pb
0.97La
0.02) (Zr
0.85Sn
0.13Ti
0.02) O
3On the thick film, revolving the glue time is 15s, then, places tube furnace to carry out annealing in process support base, and annealing temperature is 700 ℃, and duration 30min after the annealing in process, by taking out in the tube furnace, places air to be cooled to room temperature;
4. utilize (the Pb of photoetching process after 3. handling through step
0.97La
0.02) (Zr
0.85Sn
0.13Ti
0.02) O
3Define the figure of micro-cantilever on the thick film: length is that 800 μ m, width are 200 μ m, and is the Au metal level of 200nm according to the figure sputtering sedimentation thickness of micro-cantilever, and this metal level is as top electrode, (Pb
0.97La
0.02) (Zr
0.85Sn
0.13Ti
0.02) O
3The Pt metal level of thick film below is as bottom electrode; And (the Pb after 3. handling through step
0.97La
0.02) (Zr
0.85Sn
0.13Ti
0.02) O
3Sputtering sedimentation is respectively applied for the pressure welding point that is connected with upper and lower electrode on the thick film, and sputtering sedimentation is realized the metal level that bottom electrode is connected with corresponding bonding point on the support base side end face;
5. with 35% (wt) KOH, 7.5% (wt) aqueous isopropanol back-etching technology is implemented at the support base back side, made the support base interior thickness reduce to 25 μ m; 4. the micro-cantilever figure that utilizes photoetching process to define in according to step, at first, with V (HCl): V (HNO
3): V (H
2O)=50: 3: 50 etching solution is to (the Pb on the support base
0.97La
0.02) (Zr
0.85Sn
0.13Ti
0.02) O
3Thick film carries out wet etching, then, with deep reaction ion etching technology or surperficial sacrificial layer technology etching is proceeded at the support substrate middle part, form peripheral pedestal, reach and the single-ended cantilever beam structure that links to each other of peripheral pedestal, and cantilever beam length is 800 μ m, width is 200 μ m, and thickness is 15 μ m.
Claims (1)
1. micro cantilever beam driving member based on antiferroelectric thick film field induced phase transition strain effect is characterized in that according to following processing step processing and manufacturing:
1. be that lead base antiferroelectric materials precursor colloidal sol and the concentration of 0.2mol/l～0.6mol/l is the PbO colloidal sol of 0.2mol/l～0.4mol/l with sol-gel technology technology compound concentration;
2. be coated with the silica-based or Pt/TiO of Pt metal level with upper surface
2/ SiO
2/ Si is as support base, and the lead base antiferroelectric materials precursor colloidal sol of with the glue speed of revolving of 2000～4000r/min 1. step being prepared by sol evenning machine is spun on the Pt metal level (2) of support base, and revolving the glue time is 10s～30s; And after revolving glue, place tube furnace to carry out the heat treatment of 8～20min support base with 400 ℃～600 ℃ temperature, after the heat treatment, by taking out in the tube furnace, be cooled to room temperature, repeating above-mentioned glue, the Technology for Heating Processing step of revolving, is the lead base antiferroelectric materials thick film (3) of 1 μ m～10 μ m until going up acquisition thickness at the Pt of support base metal level (2);
3. the PbO colloidal sol of with the glue speed of revolving of 2000～4000r/min 1. step being prepared by sol evenning machine is spun on the lead base antiferroelectric materials thick film (3), revolving the glue time is 15s～20s, then, place tube furnace to carry out annealing in process support base, annealing temperature is 650 ℃～750 ℃, and duration 20min～40min is after the annealing in process, by taking out in the tube furnace, place air to be cooled to room temperature;
4. utilize the figure that defines micro-cantilever on the lead base antiferroelectric materials thick film (3) of photoetching process after 3. handling through step, and be the metal level of 100nm～300nm according to the figure sputtering sedimentation thickness of micro-cantilever, this metal level is as top electrode (4), and the Pt metal level (2) of lead base antiferroelectric materials thick film (3) below is as bottom electrode; And the last sputtering sedimentation of the lead base antiferroelectric materials thick film (3) after 3. handling through step is respectively applied for the pressure welding point (1,8) that is connected with upper and lower electrode, the metal level (5) that sputtering sedimentation realization bottom electrode is connected with corresponding bonding point (8) on the support base side end face;
5. utilize back-etching technology that the support base back side is corroded, make the support base interior thickness reduce to 10 μ m～50 μ m; 4. the micro-cantilever figure that utilizes photoetching process to define in according to step, with the front etching technics to lead base antiferroelectric materials thick film (3), and support base middle part carry out etching, form peripheral pedestal (6), and and the single-ended cantilever beam structure that links to each other of peripheral pedestal (7).
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| CN102584221A (en) * | 2012-01-05 | 2012-07-18 | 内蒙古科技大学 | Anti-ferroelectric thick film with high breakdown field strength and preparation method |
| CN105374934B (en) * | 2015-12-01 | 2018-02-06 | 中电海康集团有限公司 | A kind of stress assisted spin transfer moment of torsion magneto-resistor random access memory and its preparation, application method |
| CN106130499A (en) * | 2016-07-11 | 2016-11-16 | 中北大学 | FBAR based on antiferroelectric materials phase-change actuation effect |
| CN110967824B (en) * | 2019-12-20 | 2022-03-04 | 中北大学 | Light beam deflection fine aiming driving component micromirror |
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