CN110967824B - Light beam deflection fine aiming driving component micromirror - Google Patents
Light beam deflection fine aiming driving component micromirror Download PDFInfo
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- CN110967824B CN110967824B CN201911329204.9A CN201911329204A CN110967824B CN 110967824 B CN110967824 B CN 110967824B CN 201911329204 A CN201911329204 A CN 201911329204A CN 110967824 B CN110967824 B CN 110967824B
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- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
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Abstract
The invention discloses a light beam deflection fine aiming driving component micro-mirror integrating driving/light reflection functions, which comprises a peripheral base with a hollow inner part, wherein Pt is etched at four corners of the peripheral base to be used as a lower electrode, a four-cantilever beam structure is arranged at the center of the peripheral base, the micro-mirror is arranged right above the four-cantilever beam and the central base of the peripheral base, a metal layer Au is sputtered and deposited in a frame of the micro-mirror, and an upper electrode Au is arranged on a cantilever beam. The micro-mirror driving and light reflecting integrated precise sighting device is reasonable in structure and simple in process, integrates the driving/light reflecting functions, effectively solves the technical bottlenecks of large size, low adjusting frequency, low response speed, low displacement resolution, poor reliability and the like of a precise sighting actuator micro-mirror in the conventional space optical communication ATP precise tracking system, is suitable for precise sighting and driving of space optical communication light beams in a deflection mode, and achieves precise control of rapid light beam alignment.
Description
Technical Field
The invention belongs to the technical field of space laser communication fine tracking, and particularly relates to a light beam deflection fine aiming driving component micromirror.
Background
In the fso (free Space Optical communication), fast and accurate capture, tracking and Aiming (ATP) are the preconditions for ensuring spatial long-distance Optical communication, belong to the most critical core in the spatial Optical communication system, and are the most difficult technology to solve at the same time. The high-frequency fine tracking system is a subsystem of the ATP system, and is used for compensating errors of the coarse tracking system so as to meet the requirements of the ATP system on final alignment and tracking accuracy. The galvanometer is a precise aiming actuator of the ATP precise tracking system, has the main function of realizing the precise control of the rapid alignment of light beams, requires microsecond order response and one-tenth of micro-arc order precision, has the execution precision and characteristics which are factors influencing the precision of a precise tracking ring and even the whole system and are core devices of the conventional ATP precise tracking system for satellite optical communication.
At present, common driving modes of the galvanometer include electromagnetic driving, swing motor driving, voice coil motor driving, piezoelectric ceramic driving and the like [9-13 ]. The working principle of the vibration mirror control system is that electromagnetic force is controlled or a motor generates displacement to drive the deflection angle of the reflector, wherein a motor/reflector platform (actuating mechanism) and the reflector (controlled object) are two devices with independent functions, and the complexity and the volume of the vibration mirror control system are increased. The ATP precision tracking system in space optical communication is generally carried on various space spacecrafts, and the ATP precision tracking system requires a driver to have small heat, small volume, low power consumption, relatively simple electric field control mode, high adjusting frequency, high resolution, high response speed and good displacement repeatability, and also requires strong capability of resisting electronic interference and radiation. Therefore, a new MEMS material is sought, a new physical effect is explored, and the technical bottleneck problems of large volume, low adjustment frequency, slow response speed, low displacement resolution, small output force, low transduction efficiency, poor reliability and the like of the current galvanometer driver are solved, which has become the main trend of the development requirement in the technical field of spatial optical communication.
The unique internal polarization mode of the antiferroelectric dielectric material results in a singular phase change behavior characteristic. Under the action of an external field (an electric field, a temperature field, a pressure field and the like), an AFE-FE phase change effect is generated and the volume of the material is changed, so that the field strain effect of the material is caused, the maximum value can reach 0.85%, the field strain effect is greatly superior to the inverse piezoelectric effect of the piezoelectric material, generally 0.4% -0.6% is a common strain, and the strain of typical PZT relaxation type ferroelectric ceramics is only about 0.1%. The polarization intensity change and the longitudinal strain caused by the phase change of the antiferroelectric material belong to jump behaviors, the phase change strain effect has good switchable characteristics, the switching response speed is high, and the switching response speed can reach within ns magnitude. Therefore, the integration of the antiferroelectric film material and the MEMS technology is realized by utilizing the electric field induced phase change switching characteristic and the phase change strain effect of the antiferroelectric material and applied to a space laser communication fine aiming execution device, which is an application basic problem of urgent demand and integrating material science and manufacturing science.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a light beam deflection fine aiming driving component micromirror aiming at the defects in the prior art, and solve the technical bottleneck problems of large volume, low adjusting frequency, slow response speed, low displacement resolution, low control precision and the like of a space laser communication ATP fine tracking micromirror driver.
The invention adopts the following technical scheme:
a light beam deflection fine aiming driving component micromirror comprises a peripheral base with a hollow interior, Pt is etched at four corners of the peripheral base to serve as a lower electrode pressure welding point, a four-cantilever beam structure is arranged at the center of the peripheral base, the micromirror is arranged right above the four-cantilever beam structure and the central base of the peripheral base, a metal layer is sputtered and deposited in a square frame of the micromirror, and upper electrodes are arranged on two adjacent beams on the four-cantilever beam structure.
Specifically, the four-cantilever beam structure and the micro-mirror are formed by etching a silicon-based PLZT film.
Furthermore, the thickness of the silicon-based PLZT film is 1.5-2 μm.
Specifically, the metal layer is made of Au through sputtering deposition, and the thickness of the metal layer is 300-500 nm.
Specifically, the upper electrode is made of Au through sputtering deposition, and the thickness of the upper electrode is 300-500 nm.
Specifically, the upper electrodes comprise two, which are respectively arranged on two adjacent cantilever beams, and the upper electrodes are provided with upper electrode pressure welding spots.
Specifically, the lower electrode is provided with a lower electrode pressure welding point.
Compared with the prior art, the invention has at least the following beneficial effects:
the invention relates to a light beam deflection fine aiming driving component micro-mirror, which aims at the application requirements of a free space laser communication ATP (capturing, tracking and aiming) fine tracking system on novel micro-mirror optical devices with small size, light weight, long service life, high security, ultra-clean precise positioning and the like, provides a technical innovation method integrating the functions of driving/light reflection (an actuating mechanism/a control object) on the basis of the research of an electric field induced phase change effect of a silicon-based antiferroelectric film material and the combination of an MEMS front edge manufacturing technology, and designs and manufactures a fine aiming actuating micro-mirror component with high sensitivity, quick response, ultra-precise positioning, high energy conversion efficiency and good displacement repeatability based on the field induced phase change effect of the antiferroelectric film material.
Furthermore, the antiferroelectric thin film material has low internal consumption, large volume strain, smaller driving force and instant step response speed, and is a key material of the technology of the fine aiming actuator of the free space optical communication fine tracking system.
Furthermore, a silicon-based PLZT film with the thickness range of 1.5-2 μm is adopted, the phase change hysteresis width of the PLZT film is large, and the saturation polarization intensity is maximum.
Further, two adjacent arms respectively represent the X and Y directions, and the Z direction is perpendicular to the X and Y directions. After a driving voltage Ux is applied between the X arm and the lower electrode, the X arm can be bent and deformed in an XZ plane, so that the micromirror is driven to generate a deflection angle alpha in the XZ direction; similarly, after a driving voltage Uy is applied between the Y arm and the lower electrode, the Y arm is bent and deformed in the YZ plane, thereby driving the micromirror to generate a deflection angle β in the YZ direction. Therefore, Ux and Uy are driven respectively, so that the micro mirror can generate different deflection angles in different directions to track various deflection conditions of external laser.
In conclusion, the invention has simple process and reasonable structure, integrates the functions of driving/light reflection (actuating mechanism/control object), effectively solves the technical bottlenecks of large size, low adjusting frequency, slow response speed, low displacement resolution, poor reliability and the like of a micro mirror of a precision aiming actuating device in the conventional space optical communication ATP precision tracking system, is suitable for the deflection precision aiming and driving of space optical communication light beams, and realizes the precision control of the quick alignment of the light beams. Has wide application prospect in the fields of industry, science and military, and has important scientific and technical value and profound strategic significance for improving national defense and military strength in China.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
FIG. 1 is a schematic diagram of a driving member of a four suspension beam micromirror according to the present invention;
FIG. 2 is a top view of a four suspension beam micromirror driving member according to the present invention;
FIG. 3 is a cross-sectional view of a four suspension micromirror driving device according to the present invention;
FIG. 4 shows P-E curves of PLZT antiferroelectric films with the same concentration and different number of layers;
FIG. 5 shows the phase-change current of PLZT antiferroelectric thin films with the same concentration and different layer numbers;
FIG. 6 is the dielectric thermogram of PLZT antiferroelectric thin film with the same concentration and different number of layers.
Wherein: 1. a peripheral base; 2. a four-suspension beam structure; 3. a micromirror; 4. a silicon-based PLZT film; 5. an upper electrode; 6. a lower electrode; 7. electrifying the pressure welding spot; 8. a lower electrode pressure welding point; 9. a metal layer.
Detailed Description
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "one side", "one end", "one side", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. In addition, in the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1, the light beam deflection fine aiming driving member micromirror of the present invention includes a peripheral base 1, the peripheral base 1 is processed on a polysilicon substrate by a Micro Electro Mechanical System (MEMS) processing technology, the center of the peripheral base 1 is etched and hollowed, a Pt/Ti layer is disposed on the surface of the peripheral base 1, a silicon-based PLZT thin film 4 with a thickness of 1.5-2 μm is heterogeneously integrated on the surface of the Pt/Ti layer, the silicon-based PLZT thin film 4 is spread over the whole micromirror 3 and the four suspension beam structure 2, and the whole peripheral base (lower electrode is removed), four sides of the micromirror 3 are connected with one end of the four suspension beam structure 2, the other end of the four suspension beam structure 2 is connected with the inner four sides of the peripheral base 1, and an Au metal layer 9 with a deposition thickness of 300 nm-500 nm is sputtered in the central frame of the micromirror 3 as a mirror surface; an Au metal layer with the thickness of 300 nm-500 nm is sputtered and deposited on two adjacent beams of the four-cantilever beam structure 2 to serve as an upper electrode 5, a Pt layer below the silicon-based PLZT film 4 serves as a lower electrode 6, 20-60V bias direct current voltage is applied between the upper electrode 5 and the lower electrode 6, the silicon-based PLZT film 4 between the upper electrode 5 and the lower electrode 6 can generate phase change of an antiferroelectric-ferroelectric structure under the induction action of an electric field, the strain effect of the silicon-based antiferroelectric material film is caused, the four-cantilever beam micromirror structure is deformed, and therefore the driving of the four-cantilever beam micromirror structure and the behavior of reflecting laser are achieved.
Referring to fig. 2, upper electrode pressure welding spots 7 are sputter deposited on two adjacent beams on the four-cantilever beam structure 2, silicon-based PLZT thin films 4 are etched around the peripheral base 1, and then lower electrode pressure welding spots 8 are leaked out, and conductive wires are welded to achieve good connection with an external circuit.
Referring to fig. 3, one end of each of four arm beams of the four suspension beam structure 2 is connected to the peripheral base 1, and the other end is connected to the micromirror 3, respectively, and the micromirror 3 is suspended over the substrate by the four suspension beam structure 2.
The invention relates to a method for preparing a light beam deflection fine aiming driving component micro-mirror, which specifically comprises the following steps:
s1, heterogeneously integrating a 1.5-2 mu m silicon-based PLZT film 4 on the surface of a Pt/Ti layer of a polycrystalline silicon substrate by using a sol-gel method;
referring to fig. 4, when the thickness of the PLZT film is increased from 15 layers (1.5 μm) to 20 layers (2 μm), the phase transition hysteresis width of the PLZT film increases and the saturation polarization increases to the maximum due to the difference in microstructure of the PLZT film caused by the thickness variation, the hysteresis width decreases when the number of layers is 30, the polarization decreases, and the electrical characteristics decrease due to the larger cracks when the thickness increases to 3 μm, the compactness is poor.
S2, processing a peripheral base 1 on the polycrystalline silicon substrate integrated with the silicon-based PLZT film 4 by adopting a micro-electro-mechanical device processing technology, etching a four-cantilever beam structure 2 and a micromirror 3 on the silicon-based PLZT film 4, wherein the micromirror 3 is supported and suspended right above the polycrystalline silicon substrate, and the four-cantilever beam structure 2 and the micromirror 3 are connected to form a four-cantilever beam-central micromirror structure;
s3, sputtering and depositing an Au metal layer 9 with the thickness of 300-500 nm in a frame of the micro mirror 3 to serve as a mirror surface, sputtering and depositing Au metal layers with the thickness of 300-500 nm on two adjacent cantilever beams of the four-cantilever structure 2 to serve as an upper electrode 5, and using a Pt layer as a lower electrode 6;
the upper electrode of the micro-mirror is obtained by directly sputtering gold on the surface of the anti-ferroelectric film, the sputtering thickness is about 300 nm-500 nm, and the upper electrode is easy to damage in the later bonding or testing process when the thickness is too thin; based on the existing process conditions, as the metal sputtering process is carried out at high temperature, the stripping glue below the metal is easy to modify due to long-time sputtering, the metal is difficult to strip, and the device is invalid, so the thickness of the sputtered metal is not more than 500 nm.
S4, sputtering and depositing an upper electrode pressure welding point 7 on the upper electrode 5, etching the silicon-based PLZT thin films 4 at the four corners of the peripheral base 1 to expose the lower electrode 6 and arrange a lower electrode pressure welding point 8, and respectively welding conductive metal wires on the upper electrode pressure welding point 7 and the lower electrode pressure welding point 8 to realize good connection with an external circuit;
s5, external lead bonding pads are arranged on the peripheral base 1 and the rear end of the cantilever beam, metal on the surface of the silicon-based PLZT film 4 is connected with the corresponding external lead bonding pads through leads, and 20-60V alternating current voltage is applied between the upper electrode 5 and the lower electrode 6 through the leads and the external lead bonding pads to drive the cantilever beam to deform the galvanometer so as to manufacture the beam deflection fine aiming driving component micromirror.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to FIG. 5, J-E curves of PLZT antiferroelectric thin films of the same concentration (0.5mol/L) and different numbers of layers (15 layers, 20 layers and 30 layers) are shown. The test result shows that:
1. under the induction of an external electric field, the maximum antiferroelectric-ferroelectric phase change current generated by the PLZT antiferroelectric film is 5.5 multiplied by 10-6A/cm2The maximum ferroelectric-antiferroelectric phase change current generated is 4.8 multiplied by 10-6A/cm2The maximum ferroelectric-antiferroelectric phase change current value is smaller than the maximum antiferroelectric-ferroelectric phase change current value;
2. increasing the number of layers from 15 to 20 produces an increase in the density of the phase change current, which is consistent with an increase in saturation polarization with increasing concentration in the P-E curve. The variable current density is suddenly reduced when the number of layers is 30, which is caused by larger surface cracks and poorer compactness of the anti-ferroelectric film when the number of layers is 30, and the saturated polarization intensity is also kept consistent with the reduction of the saturated polarization intensity when the number of layers is 30 in a P-E curve.
Please refer to fig. 6, which shows the comparison of the temperature-dielectric performance test results of PLZT antiferroelectric thin films with the same concentration layer number (0.5mol/L) and different layer numbers (15 layers, 20 layers and 30 layers), and the test frequency is 100 kHz. The results show that: when the number of the layers is increased from 15 to 20, the dielectric constant of the PLZT antiferroelectric film is increased, and when the number of the layers is increased to 30, the dielectric constant of the PLZT antiferroelectric film is suddenly reduced, which is consistent with the change trend of P-E, J-E, and is mainly caused by serious cracking of the 30-layer PLZT antiferroelectric film.
Therefore, the integration of the antiferroelectric thin film material with low internal consumption, large volume strain, smaller driving force and instant step response speed and the MEMS technology is applied to the free space laser communication fine aiming execution device, and theoretical basis and core component support are provided for the design and development of a microminiature, high-sensitivity, high-reliability and ultra-precise positioning space optical communication system ATP fine aiming device.
In conclusion, the phase change strain effect and the rapid switching characteristic of the silicon-based antiferroelectric material are utilized, the antiferroelectric thin film functional material is combined with the MEMS technology, the integrated design of the driving/light reflection function of the precision aiming device of the space optical communication system is provided, the miniaturization, high sensitivity, low power consumption and ultra-precise positioning design of the novel precision aiming execution device galvanometer in the space optical communication ATP precision tracking system is realized, the application prospect in the fields of industry, science and military is wide, and the method has important scientific and technological value and profound strategic significance for improving national defense and military strength in China.
The above-mentioned contents are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modification made on the basis of the technical idea of the present invention falls within the protection scope of the claims of the present invention.
Claims (4)
1. The utility model provides a light beam deflection fine aiming drive component micro-mirror, a serial communication port, peripheral base (1) including inside fretwork, four angles of peripheral base (1) are carved out the Pt layer and are regarded as bottom electrode (6), peripheral base center is equipped with four and are hung roof beam structure (2), four are hung roof beam structure (2) and peripheral base (1) center basement directly over and are provided with micro-mirror (3), four are hung roof beam structure (2) and micro-mirror (3) and adopt silicon-based PLZT film (4) to sculpture and form, sputter deposition has metal level (9) in the square frame of micro-mirror (3), metal level (9) adopt Au sputter deposition to make, the thickness of metal level (9) is 300 ~ 500nm, be provided with upper electrode (5) on four are hung roof beam structure (2), upper electrode (5) include two, set up respectively on two adjacent cantilever beams, be provided with upper electrode pressure (7) on upper electrode (5).
2. The beam deflection fine aiming driving member micromirror according to claim 1, wherein the thickness of the silicon-based PLZT thin film (4) is 1.5-2 μm.
3. The beam deflection fine driving member micromirror according to claim 1, wherein the upper electrode (5) is made of Au sputter deposition, and the thickness of the upper electrode (5) is 300-500 nm.
4. A beam deflection fine aiming drive member micromirror according to claim 1, wherein the lower electrode pad (8) is provided on the lower electrode (6).
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