CN101587941B - Organic electroluminescent display device - Google Patents
Organic electroluminescent display device Download PDFInfo
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- CN101587941B CN101587941B CN2009100230500A CN200910023050A CN101587941B CN 101587941 B CN101587941 B CN 101587941B CN 2009100230500 A CN2009100230500 A CN 2009100230500A CN 200910023050 A CN200910023050 A CN 200910023050A CN 101587941 B CN101587941 B CN 101587941B
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Abstract
The invention discloses an organic electroluminescent display device, which comprises a glass substrate and an ITO conductive layer arranged on the upper surface of the glass substrate, wherein an anode interface modification layer, a hole transport layer, an electron transport layer, a luminescent layer, a metal cathode Mg layer and a metal cathode Al layer are sequentially arranged on the ITO conductive layer, and the anode interface modification layer is ZnO-doping PEDOT: PSS. The device takes the ZnO-doping PEDOT: PSS as the anode interface modification layer so as to reduce the hole injection barrier of a PEDOT: PSS layer and an ITO interface and improve the composite efficiency of holes and electrons, and meanwhile, the ZnO-doping PEDOT: PSS is also taken as a light scattering layer,so that crystal scattering can increase the luminous flux of the PEDOT: PSS layer, reduces the possibility that total-internal emission occurs among organic layers of a luminescent device, and improv es the luminescent efficiency and brightness of organic OLED.
Description
Technical field
The invention belongs to the organic light emitting display technical field, relate to a kind of organic elctroluminescent device.
Background technology
OLED is that electronics and hole are injected into electron transfer layer and hole transmission layer from negative electrode and anode respectively, and meet in luminescent layer under certain electric field driven, and the exciton of formation finally causes the emission of visible light.The material requirements of OLED antianode has high work function and good light transmittance, is beneficial to light outgoing from device.Anode material adopts doping SnO usually
2In
2O
3(In
2O
3: SnO
2), i.e. ITO.ITO should have lower square resistance and even curface, with light output and the reduction device operating voltage that increases OLED.The ITO that surface roughness is big can influence ITO and contact with the effective of organic layer, and effective injection in hole, reduces device efficiency, increases the short circuit possibility and the reverse leakage current of device, quickens the inefficacy of device.
Therefore, be necessary the ITO surface is modified, improve contacting between ITO and the organic layer, and reduce the electrical short that defective causes, improve the device thermal stability, improve the efficient and the brightness of device.Except ITO substrate oxygen plasma treatment before the device preparation to cleaning through strictness, can increase outside the work function on ITO surface effectively, to the anodic interface decorative layer of the various character of ITO surface employing, the method for improving the special domestic animal of device has become the effective means that improves the OLED performance.
At present, the anodic interface decorative material that the ITO surface is carried out mainly comprises following several:
1, transpirable organic small molecule material: the CuPc that is used widely in the micromolecule device has improved contacting of ITO and hole transmission layer, has improved the stability of device.
2, polar molecule or ionic bilayer: adopt self assembly at electrode surface formation polar molecule individual layer or at ITO surface graft polar molecule, adopt different solution-treated ITO to form methods such as ionic bilayer and change electrode surface potential energy, in ITO surface acid or alkali treatment, by chemisorbed acid or alkali, and select big equilibrium ion to form thin dipole layer on the ITO surface, the ITO surface work function is moved reach 1eV.
3, high-work-function metal or inorganic thin film: the metal of the high work function of deposit 1nm on ITO, as Pt, Ni, Au, Sn or Pb reduce the hole injection barrier, and injecting for the hole provides suitable step, increase the hole and inject, reduce device threshold voltage, but device efficiency is not obviously improved.
4, insulating barrier: insulating barrier mainly comprises Al
2O
3, SiO
2, Pr
2O
3, MoS
2/ MoO
3, self-assembled monolayer, VO
X, MoO
X, RuO
X, CuO
XDeng; The ITO surface potential barrier of oxygen plasma treatment is unsettled, can obtain stable interface and insert thin insulating barrier between ITO and hole transmission layer.
5, conducting polymer: the conducting polymer that is used for the anodic interface modification mainly contains polyaniline PANI and PEDOT:PSS.At the poly-2-methoxyl group of PPV derivative-5-2-ethyl-own Oxy-1,4-is in the device of individual layer to styrene (MEH-PPV), PANI substitutes the polymer device that ITO acts on flexible substrate, has almost close quantum efficiency with ITO as the device of anode, and be two-layer electrode with ITO/PANI, than being that the device operating voltage of anode obviously descends and quantum efficiency significantly increases with ITO only, this is significantly to have reduced potential barrier between ITO and MEH-PPV because of PANI; Do not have ITO and when only making anode with polymer, can obviously reduce long-term device decay, efficient, the voltage that device is described depends on the interfacial characteristics of electrode and polymer, and the interface is to there being material impact device lifetime;
Use poly-(3 of sulfonated polyphenyl (PSS) doping polythiofuran derivative (PEDOT), 4-dioxoethyl thiophene): poly-(p styrene sulfonic acid) is (PEDOT:PSS) when modifying, the built-in electromotive force of measuring increases, the hole injection barrier reduces, improve device performance, increase luminous efficiency, reduce starting resistor, increase device lifetime; Because the highly acid of PSS, though PEDOT:PSS has certain corrosiveness to ITO, indium ion is fixed among the PEDOT:PSS and can enter in the organic layer, and indium ion is the key factor that causes fluorescent quenching, so favourable to device lifetime.The optimization of device performance is to control the hole by PEDOT:PSS to inject, and realizes by the electronics barrier effect of high work function of PEDOT:PSS and PSS.Fung etc. introduce suitable number in PEDOT:PSS glycerol improves the conductivity of PEDOT:PSS, helps the hole and injects, improve device efficient (Fung M K, et al.[J] .Appl.Phys.Lett., 2002,81 (8): 1497-1499).
Summary of the invention
The object of the present invention is to provide a kind of organic elctroluminescent device,, improve the luminous efficiency of organic OLED by improvement to the anode modification layer of ITO.
For achieving the above object, the technical solution used in the present invention is:
A kind of organic elctroluminescent device, comprise glass substrate, and the ITO conductive layer that is arranged on the glass substrate upper surface, on the ITO conductive layer, be disposed with anodic interface decorative layer, hole transmission layer, electron transfer layer and luminescent layer, metallic cathode Mg layer, with metallic cathode Al layer, described anodic interface decorative layer is the PEDOT:PSS of doping ZnO.
Described ITO conductive layer links to each other with the positive and negative electrode of direct voltage respectively with metallic cathode Al layer.
The PEDOT:PSS of described doping ZnO, the ZnO of doping are 1%～10% of PEDOT:PSS quality.
The thickness of described anodic interface decorative layer is 20～30nm.
Described ZnO is the ZnO nano particle, and its particle diameter is 2.5nm～10nm.
Compared with prior art, the present invention as the anodic interface decorative layer, can reduce the hole injection barrier at PEDOT:PSS layer and ITO interface with the PEDOT:PSS of doping ZnO, improves the combined efficiency of hole and electronics; As the scattering of light layer, the crystal scattering can increase the luminous flux of PEDOT:PSS layer simultaneously, reduces the possibility that complete interior emission takes place between the luminescent device organic layer, has improved luminous efficiency and the luminosity of organic OLED.
Description of drawings
Fig. 1 is the structural representation of organic elctroluminescent device of the present invention.
Wherein, 1 is glass substrate, and 2 is the ITO conductive layer, and 3 is the PEDOT:PSS anode modification layer of doping ZnO, and 4 is hole transmission layer, and 5 is electron transfer layer and luminescent layer, and 6 is metallic cathode Mg layer, and 7 is metallic cathode Al layer.
Embodiment
Below the present invention is elaborated, the explanation of the invention is not limited.
As shown in Figure 1, organic elctroluminescent device provided by the invention comprises glass substrate 1, and ITO conductive layer 2, anodic interface decorative layer 3, hole transmission layer 4, electron transfer layer and the luminescent layer 5, metallic cathode Mg layer 6 and the metallic cathode layer 7 that are successively set on glass substrate 1 upper surface from bottom to top, wherein, ITO conductive layer 2 links to each other with the positive and negative electrode of direct voltage respectively with metallic cathode Al layer 7, the anodic interface decorative layer is the PEDOT:PSS layer that is doped with the ZnO nano particle, and the ZnO of doping is 1%～10% of a PEDOT:PSS quality.
Being formulated as of the PEDOT:PSS anodic interface decorative layer solution of doping ZnO:
It is in 5% the PEDOT:PSS aqueous solution that the ZnO nano particle is joined mass fraction, and the room temperature lower magnetic force stirred 1 hour, was mixed with blend solution, and wherein, the quality of ZnO is 1%～10% of a PEDOT:PSS quality.
The present invention adopts the PEDOT:PSS of doping ZnO as the anodic interface decorative layer, can reduce the hole injection barrier at PEDOT:PSS layer and ITO interface, improve the combined efficiency of hole and electronics, simultaneously as the scattering of light layer, the crystal scattering can increase the luminous flux of PEDOT:PSS layer, reduce the possibility that complete interior emission takes place between the luminescent device organic layer, improved the luminosity of device.
The device architecture of specific embodiments of the invention is ITO/PEDOT:PSS+ZnO (20-30nm)/NPB (40nm)/Alq
3(50nm)/and Mg (10nm)/Al (150nm), wherein, N, N '-(Alpha-Naphthyl)-N, N '-phenyl benzidine (NPB) be as hole transmission layer, three (oxine) aluminium (Alq
3) as electron transfer layer and luminescent layer.
The concrete preparation method of this device is:
The ITO electro-conductive glass of the good special pattern of photoetching is cleaned up and dries, the electro-conductive glass that to handle is placed on the sol evenning machine again, with the syringe that has filter the PEDOT:PSS aqueous solution of doping ZnO evenly is coated with full entire I TO conductive glass surface, spin coating 1min under the rotating speed 1800rpm, form the thick film of one deck 20-30nm at conductive glass surface, the baking oven of putting into 120 ℃ heated 20-30 minute;
Transferring in the vacuum coating equipment cavity after the electro-conductive glass oven dry that scribbles the anodic interface decorative layer, when vacuum degree is higher than 1 * 10
-4During Pa, evaporation hole transmission layer, luminescent layer and metallic cathode successively, at first evaporation thickness 40nm NPB is as hole transmission layer, 50nm thick as Alq
3Electron transfer layer and luminescent layer, evaporation Mg and Al successively in the organic layer back control the evaporation speed of Mg by the control heating current, and evaporation speed is 1
Thickness is 10nm; Last evaporating Al electrode, thickness is 150nm, obtains the organic electronic light-emitting display device.
Claims (2)
1. organic elctroluminescent device, comprise glass substrate, and the ITO conductive layer that is arranged on the glass substrate upper surface, on the ITO conductive layer, be disposed with anodic interface decorative layer, hole transmission layer, electron transfer layer and luminescent layer, metallic cathode Mg layer, with metallic cathode Al layer, it is characterized in that described anodic interface decorative layer is the PEDOT:PSS of doping ZnO; Described ZnO is the ZnO nano particle, and its particle diameter is 2.5nm～10nm, and the ZnO of doping is 1%～10% of a PEDOT:PSS quality; The thickness of described anodic interface decorative layer is 20～30nm.
2. organic elctroluminescent device as claimed in claim 1 is characterized in that, the ITO conductive layer links to each other with the positive and negative electrode of direct voltage respectively with metallic cathode Al layer.
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| CN2009100230500A CN101587941B (en) | 2009-06-25 | 2009-06-25 | Organic electroluminescent display device |
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| CN2009100230500A CN101587941B (en) | 2009-06-25 | 2009-06-25 | Organic electroluminescent display device |
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Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102468444B (en) * | 2010-11-16 | 2015-09-09 | 海洋王照明科技股份有限公司 | A kind of organic electroluminescence device and preparation method thereof |
| CN102169969A (en) * | 2011-03-10 | 2011-08-31 | 中国科学院理化技术研究所 | Anode modification method of organic electroluminescent device |
| CN102891261B (en) * | 2011-07-22 | 2015-10-28 | 海洋王照明科技股份有限公司 | electroluminescent device and preparation method thereof |
| CN103367645A (en) * | 2012-04-11 | 2013-10-23 | 海洋王照明科技股份有限公司 | Organic electroluminescence device and manufacturing method thereof |
| CN103378298A (en) * | 2012-04-28 | 2013-10-30 | 海洋王照明科技股份有限公司 | Reverse top emission organic light-emitting device and preparing method thereof |
| CN103824940A (en) * | 2012-11-19 | 2014-05-28 | 海洋王照明科技股份有限公司 | Solar cell device and preparation method thereof |
| CN105576140B (en) * | 2013-01-16 | 2018-10-26 | 吴剑辉 | A kind of organic electroluminescence device |
| CN103219471A (en) * | 2013-04-09 | 2013-07-24 | 吉林大学 | Top-emitting organic electroluminescent device based on semi-transparent composite negative electrode and preparation method for top-emitting organic electroluminescent device |
| CN104201290A (en) * | 2014-08-22 | 2014-12-10 | 上海和辉光电有限公司 | Inverted type organic electroluminescence structure |
| KR101772437B1 (en) * | 2014-12-03 | 2017-08-30 | 경희대학교 산학협력단 | Light-emitting Device fabricated utilizing charge generation layer formed by solution process and fabrication method thereof |
| CN105633244B (en) * | 2016-02-05 | 2018-10-12 | 纳晶科技股份有限公司 | Electroluminescent device, display device and lighting device with it |
| CN105895830A (en) * | 2016-04-27 | 2016-08-24 | 华南师范大学 | Preparation method for ITO electrode of organic light emitting diode |
| CN106450037A (en) * | 2016-11-28 | 2017-02-22 | 深圳市华星光电技术有限公司 | Flexible quantum dot light emitting diode and preparation method thereof |
| CN108365132B (en) * | 2018-02-07 | 2020-02-14 | 深圳市华星光电半导体显示技术有限公司 | Top-emitting OLED substrate, preparation method thereof and OLED display panel |
| CN113140684B (en) * | 2021-04-16 | 2022-05-31 | 南京国兆光电科技有限公司 | Micro OLED display screen and bright spot defect laser repairing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1731903A (en) * | 2005-07-01 | 2006-02-08 | 中山大学 | Method for improving organic electro-luminescence device lifetime |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1731903A (en) * | 2005-07-01 | 2006-02-08 | 中山大学 | Method for improving organic electro-luminescence device lifetime |
Non-Patent Citations (1)
| Title |
|---|
| 朱文清，蒋雪茵，张志林，孙润光，许少鸿.有机电致发光器件中的阳极界面修饰的特点与类型.《功能材料－增刊》.2004,第35卷276-280. * |
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