CN101587924A - Semiconductor element for emitting radiation and method for reducing operation voltage of same - Google Patents
Semiconductor element for emitting radiation and method for reducing operation voltage of same Download PDFInfo
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- CN101587924A CN101587924A CNA200810097609XA CN200810097609A CN101587924A CN 101587924 A CN101587924 A CN 101587924A CN A200810097609X A CNA200810097609X A CN A200810097609XA CN 200810097609 A CN200810097609 A CN 200810097609A CN 101587924 A CN101587924 A CN 101587924A
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Abstract
The invention provides a semiconductor element for emitting radiation and a method for reducing operation voltage of the same. The semiconductor element comprises an active layer used for generating radiation, a rho type conducting layer, a transparent conducting layer and a non-rho type ohmic contact layer, wherein the rho type conducting layer is formed on the active layer; the non-rho type ohmic contact layer is arranged between the rho type conducting layer and the transparent conducting layer; and the non-rho type ohmic contact layer is used for reducing the operation voltage of the semiconductor element for emitting the radiation. In addition, the non-rho type ohmic contact layer is AlxCayIn[(1-x-y)]N quaternary alloy, and a component of aluminum contained in the quaternary alloy ensures that the energy gap of the non-rho type ohmic contact layer is larger than that of the active layer so as to reduce the light absorption effect of the non-rho type ohmic contact layer and achieve the effect of reducing the operation voltage.
Description
Technical field
The present invention relates to a kind of semiconductor element that sends radiation, particularly a kind of semiconductor element that sends radiation that reduces operating voltage.
Background technology
Light-emitting diode is the element that utilizes semi-conducting material made, is a kind of fine solid state light emitter that converts electrical energy into luminous energy.Because light-emitting diode has environmental issue and unisexuality light emitting characteristics and advantages such as volume is little, the life-span is long, driving voltage is low, caloric value is low, power consumption is little, reaction speed is fast, no mercury pollution, and the demand that can cooperate light, the thin and miniaturization of various application apparatuss, therefore, become the electronic product of popularizing in the daily life.
In recent years, many focuses concentrate on based on the formed light-emitting component of the semiconductor of III-nitride, for example gallium nitride (GaN), aluminium nitride (AlN), aluminium gallium nitride alloy (AlGaN), InGaN (InGaN), aluminum indium nitride gallium (AlInGaN) etc.
In semiconductor element, be p type conductive layer with p type GaN material usually based on III-nitride.The III-nitride material that the material of p type conducting shell is mixed for the p type, and because of the doping content of p type nitride semi-conductor material can't be so high as n section bar material, make that p type electrode is difficult for forming good Ohmic contact with the p N-type semiconductor N, therefore often need on p type conducting shell, additionally form burning transparency conducting electrode layer, reduce contact resistance in the mode of face electrode.
The burning transparent, conductive material, as indium tin oxide (ITO) and nickel oxide (NiO) etc., be widely used in the photoelectric cell, for example thin-film transistor (TFT-LCD), organic light-emitting diode element (OLED) and light-emitting diode etc., and particularly in the light-emitting diode based on III-nitride, the use of burning transparent, conductive material especially more to be seen.This burning transparent, conductive material institute's role in photoelectric cell is an electronic conductive layer and an optical transport layer.For photoelectric cell, how major technology allows element have lower and more stable forward operating voltage if being improved still to be to seek, therefore, above-mentioned still not enough in the mode that reduces contact resistance as the face electrode with transparent electrode layer.Yet the contact layer that will form an ohmic conduction between ITO and p type GaN rete is not easy thing.
General common in order to the conventional art that reduces contact resistance mostly with highly doped p type contact layer as solution, yet, this highly doped p type contact layer may cause the situation of extinction because of the energy gap size of dopant material, and, cause the unstable situation of operating voltage because of the too high diffusion that causes carrier of doping content.
In view of this, still be necessary to develop new light emitting diode construction, reaching the purpose that reduces operating voltage, and improve the efficient that light takes out, promote the brightness of light-emitting diode, to accord with the demands of the market.
Summary of the invention
The invention provides a kind of non-p type ohm (ohmic) contact layer, send the operating voltage of the semiconductor element of radiation in order to reduction.
Non-p type ohmic contact layer provided by the present invention, its material does not comprise the magnesium metal, therefore more can reduce the absorption of rete to light.
Al provided by the present invention
xGa
yIn
(1-x-y)The non-p type of N ohmic contact layer is single epitaxial growth layer, except obtaining stable transport properties, more can avoid the light reflex of multilist generation that face brings out.
The invention provides a kind of semiconductor element that sends radiation, comprise: one in order to produce active layer (active layer), a p type conducting shell, a transparent conductive layer (the transparent conductive layer of radiation, TCL), with non-p type ohm (ohmic) contact layer.Wherein, p type conducting shell is formed on the active layer, and transparent conductive layer is formed on the p type conducting shell, but not p type ohmic contact layer is between p type conducting shell and transparent conductive layer.
According to the above-mentioned semiconductor element that sends radiation, wherein, this semiconductor element is light-emitting diode or is laser diode.
According to the above-mentioned semiconductor element that sends radiation, wherein, this non-p type ohmic contact layer is to be Al
xGa
yIn
(1-x-y)The N quaternary alloy, the scope of x value and y value is 0≤x≤1,0≤y≤1, and above-mentioned this Al
xGa
yIn
(1-x-y)Energy gap in the N quaternary alloy reduces the extinction effect of this non-p type ohmic contact layer greater than the energy gap of active layer with this characteristic.
According to the above-mentioned semiconductor element that sends radiation, wherein, this non-p type ohmic contact layer is to be single epitaxial growth layer, and the thickness range value of this non-p type ohmic contact layer is
According to the above-mentioned semiconductor element that sends radiation, wherein, this non-p type ohmic contact layer is in order to reduce this its operating voltage of semiconductor element that sends radiation.
According to the above-mentioned semiconductor element that sends radiation, wherein, this semiconductor element also comprises a substrate and a n type conducting shell, and this n type conducting shell is between this substrate and this active layer, and this substrate is sapphire (Al
2O
3) or be carborundum (SiC), this transparent conductive layer is one of following group or its combination: indium tin oxide (ITO), indium-zinc oxide (IZO), zinc oxide (ZnO), nickel oxide (NiO), cadmium tin-oxide (CTO), ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, CuGaO
2With SrCu
2O
2Deng.
According to another program, the present invention also provides the method for the operating voltage of the semiconductor element that a kind of reduction sends radiation, comprises: a substrate is provided; On this substrate, form a n type conducting shell, in regular turn in order to produce active layer, a p type conducting shell of radiation; Form a non-p type ohmic contact layer and a transparent conductive layer on this p type conducting shell in regular turn, wherein this non-p type ohmic contact layer is in order to reduce the operating voltage of this semiconductor element.
Send the method for operating voltage of the semiconductor element of radiation according to above-mentioned reduction, wherein, this semiconductor element is light-emitting diode or laser diode.
Send the method for operating voltage of the semiconductor element of radiation according to above-mentioned reduction, wherein, this non-p type ohmic contact layer is Al
xGa
yIn
(1-x-y)The N quaternary alloy, the scope of x value and y value is 0≤x≤1,0≤y≤1, and above-mentioned this Al
xGa
yIn
(1-x-y)The energy gap of N quaternary alloy reduces the extinction effect of this non-p type ohmic contact layer greater than the energy gap of active layer with this characteristic.
Send the method for operating voltage of the semiconductor element of radiation according to above-mentioned reduction, wherein, this non-p type ohmic contact layer is to be single epitaxial growth layer, and the thickness range value of this non-p type ohmic contact layer is
This transparent conductive layer is one of following group or its combination: indium tin oxide (ITO), indium-zinc oxide (IZO), zinc oxide (ZnO), nickel oxide (NiO), cadmium tin-oxide (CTO), ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, CuGaO
2With SrCu
2O
2Deng.
Contained aluminium component can make the energy gap of non-p type ohmic contact layer greater than active layer in the quaternary alloy provided by the present invention, with this extinction effect that reduces non-p type ohmic contact layer, make the semiconductor element that sends radiation of the present invention can reach the effect that reduces operating voltage.
Description of drawings
Fig. 1 is the semiconductor element cross-sectional view constructed according to the present invention;
Fig. 2 is the semiconductor element (this sentences light-emitting diode is example) of radiation and the I-E characteristic figure of traditional light-emitting diode of sending provided by the present invention, and circular point-like curve and square point-like curve are respectively traditional light-emitting diode and light-emitting diode provided by the present invention among the figure.
Wherein, description of reference numerals is as follows:
100 send semiconductor element 110 substrates of radiation
120 n type conducting shells, 130 active layers
140 p type conducting shells, 150 n type contact layers
160 transparent conductive oxide layers, 170 p type electrode layers
180 n type electrode layers
Embodiment
The present invention is a kind of semiconductor element that sends radiation in this direction of inquiring into.In order to understand the present invention up hill and dale, detailed step and composition thereof will be proposed in following description.Apparently, execution of the present invention is not defined in the specific details that the technical staff was familiar with in the semiconductor element field of sending radiation.On the other hand, well-known composition or step are not described in the details, with the restriction of avoiding causing the present invention unnecessary.Preferred embodiment meeting of the present invention is described in detail as follows, yet except these were described in detail, the present invention can also implement in other embodiments widely, and scope of the present invention do not limited, its with after the claim scope be as the criterion.
In semiconductor element, be p type conductive layer with p type GaN material usually based on GaN, AlGaN, InGaN.Yet owing to can produce higher contact resistance between the contact interface of p type conductive layer and p type electrode layers such as transparency conducting layer or metal, the electrical power that is consumed on the contact resistance can convert thermal losses to, and can influence the operation of this element on function.In semiconductor element based on GaN, the power that contact resistance consumed account for gross electric capacity 50% or more.In addition, the thermal losses meeting that is produced raises the temperature of this element, yet too high temperature can make this element impaired, therefore, contact resistance is reduced.And in semiconductor element based on GaN, the contact resistance of comparing between the rete that is connected with p type conducting shell with the contact resistance between rete that n type conducting shell is connected is little a lot, yet total consumed power is based on the series connection total value between each contact resistance of semiconductor element, therefore then need especially to reduce with rete that p type conducting shell is connected between contact resistance so that contact resistance decline always.Below four cited prior aries the method that it is advocated is respectively proposed, to address the above problem.
As U.S. Pat 7105850, the p type contact layer (p type coating layer is positioned on the active illuminating layer) on p type coating layer of propose growing up, and with the InGaN (In of magnesium and aluminium codope
1-yGa
yN), reduce the operating voltage of light-emitting diode in this way as the material of p type contact layer.。Yet in the material of the p type contact layer that this invention is provided, because the cause of its energy gap of magnesium metal can cause light to take out the reduction of efficient.
U.S. Pat 7005681, proposing with magnesium or the highly doped InGaN of zinc is the material of p type contact layer, to reduce contact resistance.What this invention was provided is the semiconductor element of p type contact layer with the InGaN, if will obtain the electric current of 0.08Amp, then its operating voltage need just can reach for 6 volts, though tradition is also little with the semiconductor element gained measured value of p-GaN-contact layer, it is too high that 6 volts operating voltage is still disliked.In addition, identical with above-mentioned U.S. Pat 7105850 is that this patent also uses the material of magnesium-doped metal to be p type contact layer, therefore still can be subjected to the influence of the energy gap of magnesium own, reduces photon and takes out efficient.
U.S. Pat 7132695, proposition reduces contact resistance with p section bar material and the common codope contact layer that mixes of n section bar material, the p type dopant material that it proposed is magnesium (Mg), zinc (Zn), beryllium (Be), calcium (Ca), and n type dopant material is silicon (Si), germanium (Ge), tin (Sn), tellurium (Te), oxygen (O), carbon (C) etc.Yet its transport properties of the rete of this kind codope is wayward, and also can't guarantee the stability of conductivity.
U.S. Pat 6995403, proposition can be with the rete that forms with the narrow nitride semi-conductor material repeatedly stacking that can be with wide, and the contact layer between transparent conductive layer and p type conducting shell reduces contact resistance with this.Yet, learn by Fresnel loss (Fresnel loss) effect, when light is passed to the border of two media, can cause the loss of photon energy because of the multipath reflection that produces at boundary.Therefore, many more interfaces make that then the reflection situation of light is more serious, and hinder the chance that photon penetrates from light-emitting diode.
Take a broad view of the disappearance of above-mentioned existing patent: its extinction situation of contact layer that with magnesium is alloy, and the wayward and unsettled situation of conductivity of its institute's transport properties that causes of the contact layer of p type and n section bar material mixing and doping, and the rete at many interfaces causes the light multipath reflection and makes the problems such as situation of photon energy loss, therefore, the invention provides one can be in order to the solution that reduces contact resistance and avoid the problems referred to above to produce.
The present invention mainly utilize extensional mode grow up one will with transparent conductive layer (transparentconductive layer, TCL) Jie Chu non-p type ohmic contact layer (non-p-type doping ohmiccontact layer), to reduce the operating voltage (operating voltage) of LED, and the heat that produces because of resistance between minimizing p type conducting shell and the transparent conductive layer, and then reduce this heat quantum well is caused Jiao Er thermal effect (Joule heating effect) situation, making LED wait on other efficient at whole lighting efficiency and electro-optical efficiency (wall plug efficiency) can have preferable performance.And main characteristic such as the extension composition of energy band, defective, impurity and the element of element material and the structure etc. with element itself of electro-optical efficiency are relevant.Simultaneously, do not comprise at its composition under the situation of magnesium, non-p type ohmic contact layer provided by the present invention more can reduce the absorption of rete to light.In addition, non-p type ohmic contact layer provided by the present invention is applicable to that various transparent conductive layers are (as the combination of indium tin oxide (ITO), indium-zinc oxide (IZO), zinc oxide (ZnO), nickel oxide (NiO), cadmium tin-oxide (CTO) or above-mentioned group, and ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, CuGaO
2With SrCu
2O
2Deng) manufacture process.
Please refer to shown in Figure 1, be a kind of profile that sends the semiconductor element 100 of radiation provided by the present invention, from bottom to top comprise in regular turn from substrate 110 beginnings: a n type conducting shell 120, active layer (active layer) 130, one p type conducting shell 140, one non-p type ohmic contact layer 150, a transparent conductive layer 160 and a p type electrode layer 170 in order to the generation radiation, and a n type electrode layer 180 that contacts with n type conducting shell 120 in addition.Wherein, n type conducting shell 120 is positioned at substrate 110 surfaces, active layer 130 is positioned on the n type conducting shell 120, p type conducting shell 140 is formed on the active layer 130, transparent conductive layer 160 is formed on the p type conducting shell 140, and 150 of non-p type ohmic contact layers are between p type conducting shell 140 and transparent conductive layer 160.
The above-mentioned semiconductor element 100 that sends radiation is light-emitting diode or is laser diode, and the monocrystalline alundum (Al (sapphire that aforesaid substrate 110 is C-Plane, R-Plane, A-Plane, sapphire), or carborundum (6H-SiC or 4H-SiC), also can be Si, ZnO, GaAs, spinelle (MgAl
2O
4), or lattice constant approaches the materials such as monocrystalline oxide of group iii nitride semiconductor.In addition, n type conducting shell 120, active layer 130, p type conducting shell 140 etc. are materials such as III-nitride, and the material of p type electrode layer 170 is the group that nickel (Ni), palladium (Pd), platinum (Pt), chromium (Cr), gold (Au), titanium (Ti), silver (Ag), aluminium (Al), germanium (Ge), tungsten (W), tungsten silicide (SiW), tantalum (Ta), golden kirsite (AuZn), golden beryllium alloy (AuBe), gold-germanium alloy (AuGe) and gold germanium nickel alloy (AuGeNi) are formed.
And the non-p type ohmic contact layer 150 that is provided in the present invention is Al
xGa
yIn
(1-x-y)The N quaternary alloy, this Al
xGa
yIn
(1-x-y)N is single epitaxial growth layer, and this non-p type ohmic contact layer 150 is the operating voltages that send the semiconductor element 100 of radiation in order to reduction.Wherein, the scope of x value and y value is 0≤x≤1,0≤y≤1, and the thickness range value is
Al provided by the present invention
xGa
yIn
(1-x-y)The non-p type of N ohmic contact layer 150 is except obtaining stable transport properties, and the individual layer epitaxial growth can be avoided the light reflex of multilist generation that face brings out.In addition, Al provided by the present invention
xGa
yIn
(1-x-y)Aluminium component in the N quaternary alloy can this quaternary alloy material of modulation energy gap, and make the energy gap of non-p type ohmic contact layer greater than active layer, reduce the extinction effect of non-p type ohmic contact layer with this.
Please refer to shown in Figure 2, be the semiconductor element (this sentences light-emitting diode is example) of radiation and the I-E characteristic figure of traditional light-emitting diode of sending provided by the present invention, circular point-like curve and square point-like curve are respectively traditional light-emitting diode and light-emitting diode provided by the present invention among the figure.Can know by circular point-like curve among the figure and square point-like curve and to find out, if will obtain identical current value, 0.08Amp for example, light-emitting diode then provided by the present invention (square point-like curve) only needs 3.6 volts and can reach, and traditional light-emitting diode (circular point-like curve) wants 4.0 volts just can reach.Therefore the semiconductor element that sends radiation provided by the present invention can be reached the effect that reduces operating voltage really.
The invention provides a kind of method that reduces the operating voltage of the semiconductor element that sends radiation, comprise: a substrate is provided, and on substrate, forms a n type conducting shell, in regular turn in order to produce active layer, a p type conducting shell of radiation; On p type conducting shell, form a non-p type ohmic contact layer and a transparent conductive layer more in regular turn, on transparent conductive layer and n type conducting shell, form a p type electrode layer and a n type electrode layer at last respectively.Wherein non-p type ohmic contact layer is in order to reduce the operating voltage of semiconductor element.
The semiconductor element that sends radiation that is provided among the present invention is light-emitting diode or laser diode.And above-mentioned mentioned non-p type ohmic contact layer is Al
xGa
yIn
(1-x-y)The N quaternary alloy, this Al
xGa
yIn
(1-x-y)N is single epitaxial growth layer.Wherein, the scope of x value and y value is 0≤x≤1,0≤y≤1, and the thickness range value of non-p type ohmic contact layer is
In addition, the mentioned substrate of this method is that (sapphire sapphire), or carborundum (6H-SiC or 4H-SiC), also can be Si, ZnO, GaAs, spinelle (MgAl for the alundum (Al monocrystalline of C-Plane, R-Plane, A-Plane
2O
4), or lattice constant approaches the materials such as monocrystalline oxide of nitride-based semiconductor, and n type conducting shell, active layer, p type conducting shell etc. are materials such as III-nitride.
Apparently, according to the description among the top embodiment, the present invention has many corrections and difference.Therefore need be understood in the scope of its additional claim, except above-mentioned detailed description, the present invention can also implement widely in other embodiments.Above-mentioned is preferred embodiment of the present invention only, is not in order to limit claim scope of the present invention; All other do not break away from the equivalence of being finished under the disclosed spirit and changes or modification, all should be included in the claim scope of enclosing.
Claims (10)
1, a kind of semiconductor element that sends radiation comprises:
In order to produce the active layer of radiation;
P type conducting shell, this p type conducting shell is formed on this active layer;
Transparent conductive layer, this transparent conductive layer are formed on this p type conducting shell; With non-p type ohmic contact layer, be formed between this p type conducting shell and this transparent conductive layer.
2, the semiconductor element that sends radiation as claimed in claim 1, wherein, this semiconductor element is light-emitting diode or is laser diode.
3, the semiconductor element that sends radiation as claimed in claim 1, wherein, this non-p type ohmic contact layer is Al
xGa
yIn
(1-x-y)The N quaternary alloy, the scope of x value and y value is 0≤x≤1,0≤y≤1, and above-mentioned this Al
xGa
yIn
(1-x-y)Energy gap in the N quaternary alloy reduces the extinction effect of this non-p type ohmic contact layer greater than the energy gap of active layer with this characteristic.
4, the semiconductor element that sends radiation as claimed in claim 1, wherein, this non-p type ohmic contact layer is single epitaxial growth layer, the thickness range value of this non-p type ohmic contact layer is
5, the semiconductor element that sends radiation as claimed in claim 1, wherein, this non-p type ohmic contact layer is in order to reduce the operating voltage that this sends the semiconductor element of radiation.
6, the semiconductor element that sends radiation as claimed in claim 1, wherein, this semiconductor element also comprises substrate and n type conducting shell, this n type conducting shell is between this substrate and this active layer, this substrate is sapphire or is carborundum that this transparent conductive layer is one of following group or its combination: indium tin oxide, indium-zinc oxide, zinc oxide, nickel oxide, cadmium tin-oxide, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, CuGaO
2With SrCu
2O
2Deng.
7, the method for operating voltage of the semiconductor element of radiation is sent in a kind of reduction, comprises:
Substrate is provided;
On this substrate, form n type conducting shell in regular turn, in order to produce active layer, the p type conducting shell of radiation;
Form non-p type ohmic contact layer and transparent conductive layer in regular turn on this p type conducting shell, wherein this non-p type ohmic contact layer is in order to reduce the operating voltage of this semiconductor element.
8, the method for operating voltage of the semiconductor element of radiation is sent in reduction as claimed in claim 7, and wherein, this semiconductor element is light-emitting diode or laser diode.
9, the method for operating voltage of the semiconductor element of radiation is sent in reduction as claimed in claim 7, and wherein, this non-p type ohmic contact layer is Al
xGa
yIn
(1-x-y)The N quaternary alloy, the scope of x value and y value is 0≤x≤1,0≤y≤1, and above-mentioned this Al
xGa
yIn
(1-x-y)The energy gap of N quaternary alloy reduces the extinction effect of this non-p type ohmic contact layer greater than the energy gap of active layer with this characteristic.
10, the method for operating voltage of the semiconductor element of radiation is sent in reduction as claimed in claim 7, and wherein, this non-p type ohmic contact layer is single epitaxial growth layer, and the thickness range value of this non-p type ohmic contact layer is
This transparent conductive layer is one of following group or its combination: indium tin oxide, indium-zinc oxide, zinc oxide, nickel oxide, cadmium tin-oxide, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, CuGaO
2With SrCu
2O
2Deng.
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|---|---|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367404A (en) * | 2012-04-02 | 2013-10-23 | 鸿富锦精密工业（深圳）有限公司 | Thin film transistor |
| CN103422064A (en) * | 2012-05-14 | 2013-12-04 | 海洋王照明科技股份有限公司 | Conductive thin film, and preparation method and application thereof |
| CN103422057A (en) * | 2012-05-14 | 2013-12-04 | 海洋王照明科技股份有限公司 | Conductive thin film, and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100896564B1 (en) * | 2004-08-31 | 2009-05-07 | 삼성전기주식회사 | Reflective electrode and compound semiconductor light emitting device including the same |
| JP2006086165A (en) * | 2004-09-14 | 2006-03-30 | ▲さん▼圓光電股▲ふん▼有限公司 | Structure of gallium nitride-based light emitting diode provided with p-type contact layer with low-temperature growth and low electric resistance |
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2008
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367404A (en) * | 2012-04-02 | 2013-10-23 | 鸿富锦精密工业（深圳）有限公司 | Thin film transistor |
| CN103422064A (en) * | 2012-05-14 | 2013-12-04 | 海洋王照明科技股份有限公司 | Conductive thin film, and preparation method and application thereof |
| CN103422057A (en) * | 2012-05-14 | 2013-12-04 | 海洋王照明科技股份有限公司 | Conductive thin film, and preparation method and application thereof |
| CN103422057B (en) * | 2012-05-14 | 2016-04-13 | 海洋王照明科技股份有限公司 | Conductive film, its preparation method and application |
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| CN101587924B (en) | 2011-12-21 |
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