CN101587216A - Dual wavelength laser component for optical fiber communication - Google Patents
Dual wavelength laser component for optical fiber communication Download PDFInfo
- Publication number
- CN101587216A CN101587216A CNA2008100818984A CN200810081898A CN101587216A CN 101587216 A CN101587216 A CN 101587216A CN A2008100818984 A CNA2008100818984 A CN A2008100818984A CN 200810081898 A CN200810081898 A CN 200810081898A CN 101587216 A CN101587216 A CN 101587216A
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- laser
- pedestal
- dual wavelength
- optical fiber
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- 230000009977 dual effect Effects 0.000 title claims abstract description 50
- 239000013307 optical fiber Substances 0.000 title claims abstract description 32
- 238000004891 communication Methods 0.000 title claims abstract description 29
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 62
- 230000004308 accommodation Effects 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 11
- 239000012774 insulation material Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000002184 metal Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 235000011449 Rosa Nutrition 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
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Abstract
The invention provides a dual wavelength laser component for optical fiber communication, which comprises a close cover, a base matched with the close cover to form an accommodating space, a first laser chip and a second laser chip, wherein the first laser chip and the second laser chip are arranged on the base and positioned in the accommodating space; the close cover comprises a cover body and a lens embedded on the cover body; the first laser chip emits out a first laser beam toward the lens; the second laser chip emits out a second laser beam toward the lens; and the dual wavelength laser component capable of emitting two laser beams with different wavelengths can be obtained by commonly arranging the first laser chip and the second laser chip with different wavelengths in the accommodating space formed by the base and the close cover.
Description
Technical field
The invention provides a kind of photoelectric subassembly, refer in particular to a kind of dual wavelength laser component that is used for optical fiber communication.
Background technology
The Internet provides an information exchange platform easily.Because transinformations such as audio or video increase day by day, the maximum transfer speed of the transmission cable of conventional client is not applied gradually and is used, and impels optical fiber to replace traditional cable gradually, so that the user to be provided bigger transinformation.
In order further to improve the transinformation of optical fiber; regular meeting adopts wavelength-division multiplex (WDM; WavelengthDivision Multiplex) technology transmits a plurality of light with different wave length simultaneously, to improve whole transinformation in an optical fiber.
The two-way multitask transmission of three-wavelength in the past has light emission secondary module (TOSA, Transmitteroptical subassembly), and the light-receiving secondary module (ROSA, Receiveroptical subassembly) of collocation light emission secondary module.Wherein, this light emission secondary module has two laser modules and inspection optical assembly that encapsulates with metal can (TO-can) respectively separately.
Yet because the structure of above-mentioned light emission secondary module is comparatively complicated, part and the assembly cost followed are higher, so that have hindered popularizing of optical fiber communication.Therefore, how simplified construction and reduce cost of manufacture has become the important exploitation direction of insider.
Summary of the invention
In view of this, fundamental purpose of the present invention is to provide a kind of dual wavelength laser component that is used for optical fiber communication, can make the light emission secondary module with this dual wavelength laser component have structure and the lower cost of manufacture of simplifying.
For reaching above-mentioned purpose, the invention provides a kind of dual wavelength laser component that is used for optical fiber communication, comprise capping, cooperate the pedestal that forms accommodation space with this capping, be arranged on this pedestal and be positioned at first laser chip of this accommodation space, and be arranged on this pedestal and be positioned at second laser chip of this accommodation space; Capping comprises lid and is embedded lens on this lid; This first laser chip sends first laser beam towards these lens; This second laser chip sends second laser beam towards these lens.
The present invention is co-located in the accommodation space of this pedestal and this capping formation by this first laser chip that wavelength is different and this second laser chip, have structure and the lower cost of manufacture of simplifying to obtain sending the dual wavelength laser component of two kinds of different wavelength of laser light, can make light emission secondary module with this dual wavelength laser component.
Description of drawings
Fig. 1 is the synoptic diagram of the dual wavelength laser component of first preferred embodiment of the present invention;
Fig. 2 is the sectional view of the dual wavelength laser component of Fig. 1;
Fig. 3 is the sectional view of the dual wavelength laser component of second preferred embodiment of the present invention;
Fig. 4 is the synoptic diagram of another embodiment of the dual wavelength laser component of this second preferred embodiment;
Fig. 5 is the synoptic diagram of another embodiment of the dual wavelength laser component of this second preferred embodiment;
Fig. 6 is the sectional view of the dual wavelength laser component of the 3rd preferred embodiment of the present invention;
Fig. 7 is the synoptic diagram of another embodiment of the dual wavelength laser component of the 3rd preferred embodiment;
Fig. 8 is the synoptic diagram of another embodiment of the dual wavelength laser component of the 3rd preferred embodiment;
Fig. 9 is the synoptic diagram of an embodiment again of the dual wavelength laser component of the 3rd preferred embodiment;
Figure 10 is the sectional view of the dual wavelength laser component of the 4th preferred embodiment of the present invention;
Figure 11 is the vertical view of the dual wavelength laser component of Figure 10;
Figure 12 is the side view of the dual wavelength laser component of Figure 10;
Figure 13 is the synoptic diagram of another embodiment of the dual wavelength laser component of the 4th preferred embodiment.
Description of reference numerals
10 cappings, 11 lids
12 lens, 20 pedestals
21 base plates, 22 projections
220 tops are provided with face 221 sides face are set
30 pedestals of 23 metal pins
40 pedestal 50 first laser chips
51 first luminous 52 first ridge-like structures
60 second laser chips, 61 second luminous zones
62 second ridge-like structures, 70 accommodation spaces
100 dual wavelength laser components
Embodiment
Relevant technology contents of the present invention in following cooperation four preferred embodiments with reference to the accompanying drawings, can clearly illustrate.
As shown in Figures 1 and 2, first preferred embodiment that is used for the dual wavelength laser component 100 of optical fiber communication of the present invention mainly comprises capping (TO cap) 10, pedestal (TO header) 20, first laser chip 50, and second laser chip 60.
This capping 10 comprises lid 11 and is embedded lens 12 on this lid 11, and in the present embodiment, these lens 12 are spherical lens, and during actual enforcement, the shape of lens is not limit with this.
This pedestal 20 is made by metal material, and it comprises the base plate 21 that cooperates formation accommodation space 70 (see figure 2)s with this capping 10, and wears this base plate 21 and projection two or more metal pins 23 in this accommodation space 70.This pedestal 20 cooperates formation metal can (TO-can) with this capping 10.The metal can type of present embodiment is the TO-46 type, does not limit with this during actual enforcement, also can be the TO pattern of TO-56 pattern or other kind.
This first laser chip 50 and this second laser chip 60 are arranged on the upper surface of the base plate 21 of this pedestal 20 contiguously, and this first laser chip 50 and second laser chip 60 send first laser beam and second laser beam towards these lens 12 respectively.
This first laser chip 50 is by the made vertical cavity surface emitting laser (VCSEL) (VCSEL of semiconductor material, vertical cavity surface emitting laser) chip, second laser chip 60 is horizontal resonance chamber wall emission laser (HCSEL, the horizontal cavity surfaceemitting laser) chip for being made by semiconductor material then.During actual enforcement, can make first laser chip 50 and second laser chip 60 all is vertical cavity surface emitting laser (VCSEL), or all is horizontal resonance chamber wall emission laser.
In the present embodiment, the wavelength of first laser beam that this first laser chip 50 is sent out is about 1310 nanometers, and the wavelength of second laser beam that this second laser chip 60 is sent out is about 1550 nanometers.Yet during actual enforcement, the wavelength of first laser beam and second laser beam is not limited thereto, and visual actual conditions are changed, but the wavelength of first laser beam is different from the wavelength of second laser beam.
As shown in Figure 3, second preferred embodiment that is used for the dual wavelength laser component 100 of optical fiber communication of the present invention, roughly the same with first preferred embodiment, difference is that this preferred embodiment also comprises the base plate 21 that is arranged on this pedestal 20 and the inferior pedestal 40 between this second laser chip 60.
This time pedestal 40 is arranged on the upper surface of this base plate 21.In the present embodiment, this time pedestal 40 can be made by silicon material (as Silicon Wafer), do not limit with this during actual enforcement, can be made by insulation material or conductive material.
This first laser chip 50 is arranged on the upper surface of this base plate 21, and is adjacent to this time pedestal 40.60 of this second laser chips are arranged on this time pedestal 40, and this first laser chip 50 and second laser chip 60 send first laser beam and second laser beam towards these lens 12 respectively.
By this time pedestal 40 bed hedgehoppings second laser chip 60 is set, make first laser chip 50 be in different height with second laser chip 60, can make this first laser chip 50 be overlapped in this second laser chip 60 a little, so that first laser beam that this first laser chip 50 is sent more is close to second laser beam that this second laser chip 60 is sent.
In addition, as shown in Figure 4, also can time pedestal 30 be set between the base plate 21 of this pedestal 20 and this first laser chip 50, with the height of this first laser chip 50 of bed hedgehopping.Perhaps, as shown in Figure 5, between the base plate 21 and this first laser chip 50 of this pedestal 20, and between the base plate 21 of this pedestal 20 and this second laser chip 60, time pedestal 30, inferior pedestal 40 are set respectively, each is in order to adjust the relative position of first laser chip 50 or second laser chip 60 and lens 12, to obtain preferable optical property.This time pedestal 30,40 can be made by insulation material or conductive material.
As shown in Figure 6, the 3rd preferred embodiment that is used for the dual wavelength laser component 100 of optical fiber communication of the present invention, roughly the same with first preferred embodiment, its difference is that the pedestal 20 of this preferred embodiment also comprises by the projection 22 of base plate 21 upper surfaces towards these accommodation space 70 interior projections.This projection 22 comprises top in the face of these lens 12 and face 220 is set and with side that this top is provided with face 220 adjacency face 221 is set.
And in this preferred embodiment, this first laser chip 50 is penetrated the type laser chip for the limit of being made by semiconductor material, and this first laser chip 50 is arranged on this side and is provided with on the face 221 and can sends first laser beam towards these lens 12.This second laser chip 60 can be for by semiconductor material made vertical cavity surface emitting laser (VCSEL) chip or horizontal resonance chamber wall emission laser chip, and this second laser chip 60 is arranged on this top and is provided with on the face 220 and towards these lens 12 and sends second laser beam.
The side that is provided by the projection 22 of this pedestal 20 is provided with face 221, can be arranged on side for the laser chip that type is penetrated on the limit and be provided with on the face 221, to send laser beam towards these lens 12.
In addition, as shown in Figure 7, the inferior pedestal 30 that is provided with between face 221 and this first laser chip 50 in order to the relative position of adjusting first laser chip 50 and lens 12 can be set also in the side of this projection 22.Or as shown in Figure 8, the inferior pedestal 40 that is provided with between face 220 and this second laser chip 60 in order to the relative position of adjusting second laser chip 60 and these lens 12 is set on the top of this projection 22.And, also can be as shown in Figure 9, the inferior pedestal 30 that is provided with between face 221 and this first laser chip 50 in order to the relative position of adjusting first laser chip 50 and lens 12 is set in this side, and be provided with on this top and be provided with between face 220 and this second laser chip 60 in order to adjust the inferior pedestal 40 of second laser chip 60 and the relative position of lens 12, to obtain preferable optical property.This time pedestal 30,40 can be made by insulation material or conductive material.
As shown in figure 10, the 4th preferred embodiment that is used for the dual wavelength laser component 100 of optical fiber communication of the present invention, roughly the same with the 3rd preferred embodiment, difference is that this second laser chip 60 of this preferred embodiment is together to penetrate the type laser chip by the limit that semiconductor material is made with this first laser chip 50, and this second laser chip 60 is arranged on this side and is provided with on the face 221, and between this first laser chip 50 and this base plate 21.
And this preferred embodiment also comprises and is arranged on this second laser chip 60 and this side inferior pedestal 40 between the face 221 is set.In the present embodiment, this time pedestal 40 is that silicon material (as Silicon Wafer) is made, does not then limit with this during actual enforcement, and can serve as reasons insulation material or conductive material are made.
As Figure 10 and shown in Figure 11, this first laser chip 50 has first luminous zone 51 (seeing Figure 11) that can send first laser beam towards the surface of these lens 12.This second laser chip 60 has second luminous zone 61 (seeing Figure 11) that can send second laser beam towards the surface of these lens 12.
In the present embodiment, the wavelength of first laser beam that this first laser chip 50 is sent out is 1310 nanometers, and the wavelength of second laser beam that this second laser chip 60 is sent out is 1550 nanometers.Yet during actual enforcement, the wavelength of first laser beam and second laser beam is not limited thereto, and visual actual conditions are changed, but the wavelength of first laser beam need be different from the wavelength of second laser beam.
The distance of face 221 is set by this second laser chip 60 of this time pedestal 40 bed hedgehoppings and this side, make this second luminous zone 61 not be subjected to stopping of this first laser chip 50 and can directly face these lens 12, whereby, the second laser beam both that first laser beam that this first luminous zone 51 sent out and this second luminous zone 61 are sent out can directly be emitted to lens 12.
And as Figure 11 and shown in Figure 12, this first laser chip 50 is provided with away from side at it and also forms first ridge-like structure 52 that extend vertical this first luminous zone 51 on surface of face 221.And, this second laser chip 60 is provided with second ridge-like structure 62 that also forms vertical this second luminous zone 61 on the surface of face 221 at it away from side, this first ridge-like structure 52 and this second ridge-like structure 62 are in order to lasing resonant cavity, and the bearing of trend of this second ridge-like structure 62 is roughly parallel to the bearing of trend of this first ridge-like structure 52.
In addition, as shown in figure 13, also can be provided with another time pedestal 30 is set between the face 221, to adjust the relative position of first laser chip 50 and lens 12, so as to obtaining preferable optical property in this first laser chip 50 and this side.This time pedestal 30 can be made by insulation material or conductive material.
It should be noted that, for the laser beam that makes first laser chip 50 and second laser chip 60 can be emitted to the external world with not being masked via lens 12, the thickness that this second laser chip 60 and this side are provided with the inferior pedestal 40 between the face 221 needs to be provided with greater than this first laser chip 50 and this side the thickness of the inferior pedestal 30 between the face 221, the distance that second laser chip 60 and this side are provided with between the face 221 is provided with distance between the face 221 greater than first laser chip 50 and this side, so that this second laser chip 60 can not be subjected to stopping of this first laser chip 50 and can directly face these lens 12, whereby, the second laser beam both that first laser beam that this first laser chip 50 sent out and this second laser chip 60 are sent out can directly be emitted to lens 12.
In sum, first laser chip 50 and second laser chip 60 that the present invention is different with wavelength are co-located on the pedestal 20, can obtain encapsulating and can sending with single metal can the dual wavelength laser component of two kinds of different wavelength of laser light.Only need the arrange in pairs or groups inspection optical assembly of another metal can encapsulation of dual wavelength laser component of the present invention, just can constitute the required light emission secondary module of three-wavelength transmitted in both directions, because this light emission secondary module only has the assembly of two metal can encapsulation, simplified textural more in the past, can reduce part and assembly cost, reach effect of the present invention really.
The above person is preferred embodiment of the present invention only, is not in order to limit practical range of the present invention.All equivalences of doing according to claims of the present invention change and modify, and all are encompassed within the claim of the present invention.
Claims (18)
1, a kind of dual wavelength laser component that is used for optical fiber communication is characterized in that, this dual wavelength laser component comprises:
Capping comprises lid and is embedded lens on this lid;
Pedestal cooperates the formation accommodation space with this capping;
First laser chip is arranged on this pedestal and is positioned at this accommodation space, and this first laser chip sends first laser beam towards these lens; And
Second laser chip is arranged on this pedestal and is positioned at this accommodation space, and this second laser chip sends second laser beam towards these lens.
2, the dual wavelength laser component that is used for optical fiber communication as claimed in claim 1, it is characterized in that described first laser chip and described second laser chip are by semiconductor material made vertical cavity surface emitting laser (VCSEL) chip or horizontal resonance chamber wall emission laser chip.
3, the dual wavelength laser component that is used for optical fiber communication as claimed in claim 2 is characterized in that, also comprise between the base plate and this second laser chip that is located at this pedestal, or the inferior pedestal between the base plate of this pedestal and this first laser chip.
4, the dual wavelength laser component that is used for optical fiber communication as claimed in claim 3 is characterized in that, described time pedestal is made by insulation material or conductive material.
5, the dual wavelength laser component that is used for optical fiber communication as claimed in claim 2 is characterized in that, also comprises two pedestals between the base plate that is located at this pedestal respectively and this second laser chip and between the base plate of this pedestal and this first laser chip.
6, the dual wavelength laser component that is used for optical fiber communication as claimed in claim 5 is characterized in that, described time pedestal is made by insulation material or conductive material.
7, the dual wavelength laser component that is used for optical fiber communication as claimed in claim 1, it is characterized in that, described pedestal comprises base plate, and by the projection of this base plate projection in this accommodation space, this projection comprises the top and face is set and with side that this top is provided with the face adjacency face is set, this first laser chip is arranged on this side and is provided with on the face, and this second laser chip then is arranged on this top and is provided with on the face.
8, the dual wavelength laser component that is used for optical fiber communication as claimed in claim 7, it is characterized in that, described first laser chip is penetrated the type laser chip for the limit of being made by semiconductor material, and described second laser chip is by semiconductor material made vertical cavity surface emitting laser (VCSEL) chip or horizontal resonance chamber wall emission laser chip.
9, the dual wavelength laser component that is used for optical fiber communication as claimed in claim 8 is characterized in that, also comprise to be located at described top and to be provided with between face and this second laser chip, or described side is provided with the inferior pedestal between face and this first laser chip.
10, the dual wavelength laser component that is used for optical fiber communication as claimed in claim 9 is characterized in that, described time pedestal is made by insulation material or conductive material.
11, the dual wavelength laser component that is used for optical fiber communication as claimed in claim 8 is characterized in that, also comprises to be located at this top respectively and to be provided with between face and this second laser chip and this side is provided with pedestals between face and this first laser chip two times.
12, the dual wavelength laser component that is used for optical fiber communication as claimed in claim 11 is characterized in that, described time pedestal is made by insulation material or conductive material.
13, the dual wavelength laser component that is used for optical fiber communication as claimed in claim 1, it is characterized in that, described pedestal comprises base plate, and by the projection of this base plate projection in this accommodation space, this projection comprises side face is set, and this dual wavelength laser component also comprises and is arranged on this side inferior pedestal on the face is set, and this first laser chip is arranged on this side and is provided with on the face, this time pedestal is between the base plate of this first laser chip and this pedestal, and this second laser chip is arranged on this time pedestal.
14, the dual wavelength laser component that is used for optical fiber communication as claimed in claim 13 is characterized in that, the type laser chip is penetrated on the limit that described first laser chip and second laser chip are made by semiconductor material.
15, the dual wavelength laser component that is used for optical fiber communication as claimed in claim 14, it is characterized in that, described first laser chip also comprises first ridge-like structure, described second laser chip also comprises second ridge-like structure, and the bearing of trend of this first ridge-like structure is roughly parallel to the bearing of trend of this second ridge-like structure.
16, the dual wavelength laser component that is used for optical fiber communication as claimed in claim 15 is characterized in that, described pedestal is made or conductive material is made by the insulation material.
17, the dual wavelength laser component that is used for optical fiber communication as claimed in claim 15, it is characterized in that, also comprise and be arranged on this first laser chip and this side another time pedestal between the face is set, and be arranged on this second laser chip and this side is provided with the thickness of the inferior pedestal between the face greater than being arranged on the thickness that this first laser chip and this side are provided with the inferior pedestal between the face.
18, the dual wavelength laser component that is used for optical fiber communication as claimed in claim 17 is characterized in that, described pedestal is made or conductive material is made by the insulation material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100818984A CN101587216B (en) | 2008-05-20 | 2008-05-20 | Dual wavelength laser component for optical fiber communication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100818984A CN101587216B (en) | 2008-05-20 | 2008-05-20 | Dual wavelength laser component for optical fiber communication |
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| Publication Number | Publication Date |
|---|---|
| CN101587216A true CN101587216A (en) | 2009-11-25 |
| CN101587216B CN101587216B (en) | 2013-03-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100818984A Expired - Fee Related CN101587216B (en) | 2008-05-20 | 2008-05-20 | Dual wavelength laser component for optical fiber communication |
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| Country | Link |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102279446A (en) * | 2010-06-11 | 2011-12-14 | 北京中视中科光电技术有限公司 | Semiconductor laser fiber coupling module |
| CN102870024A (en) * | 2010-04-16 | 2013-01-09 | 苹果公司 | Connectors and cables with an optical transmitter |
| CN115104053A (en) * | 2020-02-21 | 2022-09-23 | 三菱电机株式会社 | Integrated optical module |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR910004265B1 (en) * | 1987-03-26 | 1991-06-25 | 가부시기가이샤 히다찌세이사꾸쇼 | Semiconductor laser system and manufacture method and light head |
| KR100333027B1 (en) * | 1998-07-14 | 2002-04-15 | 마찌다 가쯔히꼬 | Semiconductor laser device |
-
2008
- 2008-05-20 CN CN2008100818984A patent/CN101587216B/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102870024A (en) * | 2010-04-16 | 2013-01-09 | 苹果公司 | Connectors and cables with an optical transmitter |
| US8834040B2 (en) | 2010-04-16 | 2014-09-16 | Apple Inc. | Connectors and cables with an optical transmitter |
| CN102870024B (en) * | 2010-04-16 | 2015-11-18 | 苹果公司 | There is connector and the cable of optical transmitter |
| CN102279446A (en) * | 2010-06-11 | 2011-12-14 | 北京中视中科光电技术有限公司 | Semiconductor laser fiber coupling module |
| CN115104053A (en) * | 2020-02-21 | 2022-09-23 | 三菱电机株式会社 | Integrated optical module |
| CN115104053B (en) * | 2020-02-21 | 2023-10-20 | 三菱电机株式会社 | Integrated optical module |
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| Publication number | Publication date |
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| CN101587216B (en) | 2013-03-20 |
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Granted publication date: 20130320 |