CN101584016A - Plasma display panel - Google Patents
Plasma display panel Download PDFInfo
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- CN101584016A CN101584016A CN 200880002610 CN200880002610A CN101584016A CN 101584016 A CN101584016 A CN 101584016A CN 200880002610 CN200880002610 CN 200880002610 CN 200880002610 A CN200880002610 A CN 200880002610A CN 101584016 A CN101584016 A CN 101584016A
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Abstract
This invention provides PDP comprising a front plate and a back plate disposed opposite to each other, the front plate comprising a display electrode and a dielectric layer provided on a glass substrate, the back plate comprising an electrode, a partition wall, and a phosphor layer provided on a substrate, the periphery of the assembly being sealed to form a discharge space. The PDP is characterized in that the display electrode comprises a plurality of layers including at least a metal electrode layer containing silver and a glass material, the content of bismuth oxide (Bi2O3) in the dielectric layer is not less than 5% byweight and not more than 25% by weight, and the content of bismuth oxide (Bi2O3) in the glass material in the metal electrode layer is not less than 5% by weight and not more than 25% by weight.
Description
Technical field
The present invention relates to a kind of Plasmia indicating panel that is used for display device etc.
Background technology
As Plasmia indicating panel (calling PDP in the following text) owing to can realize that height becomes more meticulous, big pictureization, so existing more than 100 inches the TV etc. of grade be produced.In recent years, PDP has been applied to the full HD TV more than 2 times that number of scans is a NTSC mode in the past.In addition, consider environmental problem, require PDP not contain lead composition.In addition, in general,, need to cut down the rare metal of high price in order to save resource and to cut down material cost.
PDP is made of front panel and backplate.Front panel is made of following each one: the glass substrate of the borsal class glass that floating (float) method forms; Be formed on the show electrode that constitutes by strip like transparent electrode and bus electrode on interarea of glass substrate; Cover this show electrode and have the dielectric layer of electric capacity effect; With the protective layer of forming by magnesium oxide (MgO) that is formed on this dielectric layer.And backplate is by glass substrate; Be formed on the strip address electrode on interarea of glass substrate; The base dielectric layer of overlay address electrode; Be formed on the next door on the base dielectric layer; And the fluorescence coating that sends redness, green and blue light respectively that is formed between each next door constitutes.
Front panel and backplate are hermetically sealed, make separately the electrode forming surface side toward each other.And in the discharge space that is separated by the next door, the discharge gas of Ne-Xe is enclosed by the pressure with 400Torr～600Torr.Among the PDP, make its discharge,, send the light of redness, green, blueness, realized the coloured image demonstration by the fluorescence coating ultraviolet ray exited of all kinds of this discharge generation by show electrode being applied selectively signal of video signal voltage.
The bus electrode of show electrode has used the silver electrode that is used for guaranteeing conductivity.In addition, as dielectric layer, used with the low-melting glass of lead oxide as main component.But the worry in recent years environmental problem discloses the example (for example with reference to patent documentation 1,2,3,4 etc.) that a kind of dielectric layer does not contain lead composition.
In addition, also disclose a kind ofly when forming electrode, made glass material contain the bismuth oxide (Bi of ormal weight
2O
3) example (for example with reference to patent documentation 5).
In recent years, PDP has developed into and has been applied to the full HD TV more than 2 times that number of scans is a NTSC mode in the past, also attempts simultaneously to realize high brightnessization and improve contrast.
But, if use and use, do not contain the dielectric layer of lead composition and the glass material of electrode for worry to environmental problem, will produce following problem: the shiny black degree that black layer and light shield layer brought of show electrode is worsened, and contrast reduces, and can't guarantee the preferable image quality.
In addition, owing to saving reasons such as resource and material rise in price, also need to cut down the rare metal of high price.But, the component selections that becomes of the black material of black layer and light shield layer can be brought following problem: from rising to the resistance value of the substrate vertical direction of transparency electrode (below be considered as contact resistance value) as the metal electrode of show electrode bus, power consumption improves, thereby image quality is affected.
Patent documentation 1: the spy opens the 2003-128430 communique
Patent documentation 2: the spy opens the 2002-053342 communique
Patent documentation 3: the spy opens the 2001-045877 communique
Patent documentation 4: the spy opens flat 9-050769 communique
Patent documentation 5: the spy opens the 2000-048645 communique
Summary of the invention
PDP of the present invention, be the front panel that will form show electrode and dielectric layer on the glass substrate with substrate on form relative configuration of backplate of electrode, next door and fluorescence coating, and sealing on every side, form the PDP of discharge space, it is characterized in that, show electrode is made of a plurality of layers that comprise the metal electrode layer that contains silver and glass material at least, the bismuth oxide content of dielectric layer be weight percentage more than 5% below 25%, the bismuth oxide content of the glass material of metal electrode layer be weight percentage more than 5% below 25%.
Adopt this formation, just can provide image to show that grade is good, and with respect to the PDP of environment.
In addition, black layer contains at least one in the oxide of oxide, copper (Cu) of oxide, the nickel (Ni) of cobalt (Co), nickel (Ni), copper (Cu), cobalt (Co).
Adopt this formation, just can provide image to show that grade is good, and with respect to the PDP of environment.
In addition, PDP of the present invention, be to form show electrode on the glass substrate, the front panel of light shield layer and dielectric layer, with form electrode on the substrate, the backplate of next door and fluorescence coating is relative to be disposed, and sealing on every side forms the Plasmia indicating panel of discharge space, it is characterized in that, show electrode is by comprising the metal electrode layer that contains silver and glass material at least, with a plurality of layers of formation of the black layer that contains black material and glass material, black layer contains cobalt (Co), nickel (Ni), copper (Cu), the oxide of cobalt (Co), the oxide of nickel (Ni), in the oxide of copper (Cu) at least one.In addition, the bismuth oxide (Bi of dielectric layer
2O
3) content be weight percentage more than 5% below 25%.
Description of drawings
Fig. 1 is the stereogram of the PDP structure of expression embodiments of the present invention.
Fig. 2 is the formation sectional view of the front panel of this PDP of expression.
Fig. 3 is the performance plot of the degree of blackness of expression light shield layer for the bismuth oxide amount of dielectric layer.
Fig. 4 is the composition of the characteristic value expression contact resistance value contains to(for) the black electrode.
Fig. 5 is the performance plot of expression contact resistance value for the bismuth oxide amount of dielectric layer.
Fig. 6 is the performance plot of expression contact resistance value for the bismuth oxide content in the glass material of white electrode.
Among the figure:
1-PDP, 2-front panel, 3-front glass substrate, 4-scan electrode; 4a, 5a-transparency electrode, 4b, 5b-metal bus electrode, 5-keeps electrode, the 6-show electrode; the 7-light shield layer, 8-dielectric layer, 9-protective layer, 10-backplate; 11-back side glass substrate, 12-address electrode, 13-base dielectric layer, 14-next door; the 15-fluorescence coating, 16-discharge space, 41b, 51b-black electrode; 42b, 52b-white electrode, 81-the 1st dielectric layer, 82-the 2nd dielectric layer.
Embodiment
Below, utilize accompanying drawing, the PDP of embodiments of the present invention is described.
(execution mode)
Fig. 1 is the stereogram of the PDP structure of expression embodiments of the present invention.The base plate structure of PDP is identical with general AC creeping discharge formula PDP.As shown in Figure 1, among the PDP1, the front panel 2 that front glass substrate 3 grades are formed, with the backplate 10 relative configurations that back side glass substrate 11 etc. is formed, its peripheral part is by the encapsulant gas-tight seal of compositions such as glass dust.In the discharge space 16 of the PDP1 inside that seals, discharge gass such as Ne and Xe are enclosed by the pressure with 400Torr～600Torr.
In front on the front glass substrate 3 of plate 2, by scan electrode 4 with keep a pair of banded show electrode 6 and the light shield layer 7 that electrode 5 is formed, forming is parallel to each other disposes multiple row respectively.On the glass substrate 3, be formed with dielectric layer 8 in front, cover show electrode 6 and light shield layer 7, in addition, be formed with the protective layer of forming by magnesium oxide (MgO) etc. 9 in its surface with electric capacity effect.
In addition, overleaf on the back side glass substrate 11 of plate 10, with the scan electrode 4 of front panel 2 with keep on the orthogonal direction of electrode 5, dispose the address electrode 12 of multi-ribbon shape in parallel to each other, base dielectric layer 13 is with its covering.In addition, on the base dielectric layer 13 between the address electrode 12, be formed with the next door 14 of the specified altitude of cutting apart discharge space 16.In the groove that next door is 14, for each address electrode 12, the fluorescence coating 15 of redness, blueness and green light is sent in applied successively formation respectively because of ultraviolet ray.Scan electrode 4 and keep on the position that electrode 5 and address electrode 12 intersect and be formed with discharge cell, the discharge cell of on the direction of show electrode 6, arranging, the pixel that is configured for carrying out the colour demonstration with redness, blueness, green fluorescence coating 15.
Fig. 2 is the formation sectional view of front panel 2 of the PDP of expression embodiments of the present invention.Fig. 2 turns upside down Fig. 1 and shows.As shown in Figure 2, on according to produced front glass substrates 3 such as floating methods, pattern is formed with by scan electrode 4 and keeps show electrode 6 and the light shield layer 7 that electrode 5 is formed.Scan electrode 4 and keep electrode 5 is respectively by indium oxide (ITO) and tin oxide (SnO
2) wait transparency electrode 4a, the 5a of composition; Constitute with the metal bus electrode 4b, the 5b that are formed on transparency electrode 4a, the 5a.The effect of metal bus electrode 4b, 5b is to give conductivity to the long side direction of transparency electrode 4a, 5a, and it is to be formed by the conductive material that is principal component with silver (Ag) material.In addition, metal bus electrode 4b, 5b are made of black electrode 41b, the 51b of black and white electrode 42b, the 52b of white.
Below, the manufacture method of PDP is described.Form scan electrode 4 at first, in front on the glass substrate 3 and keep electrode 5 and light shield layer 7.These transparency electrodes 4a, 5a and metal bus electrode 4b, 5b, use photoetching process etc. are by graphically forming. Transparency electrode 4a, 5a use formation such as thin-film technique.Then, metal bus electrode 4b, 5b, the lotion that contains conductivity black particles or silver (Ag) material with set point of temperature sintering and curing forms.In addition, light shield layer 7 also is same, it is to use after the method for the lotion that comprises black material being carried out silk screen printing is formed on black material on whole of glass substrate, uses photoetching process to carry out graphical and sintering forms.
The formation step of concrete metal bus electrode 4b, 5b is generally step shown below.That is, be printed on the front glass substrate 3 and after carrying out drying, use photoetching process to carry out graphically, formation light shield layer 7 at the lotion that will contain black material.Then, printing repeatedly thereon, dry each lotion that contains the lotion of pigment and contain electroconductive particle., use photoetching process carry out graphically, form by black electrode 41b, the 51b of black and white electrode 42b, metal bus electrode 4b, the 5b that 52b forms of white thereafter.Here, the contrast when image is shown improves, and black electrode 41b, 51b are formed on lower floor's (front substrate 3 sides), and white electrode 42b, 52b are formed on the upper strata.
In addition, in embodiments of the present invention, black electrode 41b, the 51b of metal bus electrode 4b, 5b and light shield layer 7 use identical materials, and adopt the step made from same process.Because the present invention is a technology of improving degree of blackness, so in embodiments of the present invention, the degree of blackness of light shield layer 7 also can improve, and can strengthen effect of the present invention.
Next,, use casting to be coated with coating dielectric cream such as (die coat) method in front on the glass substrate 3, form dielectric cream layer (dielectric glass layer) to cover scan electrode 4, to keep the mode of electrode 5 and light shield layer 7.After coating dielectric cream, by placing the stipulated time, even up on the surface of the dielectric cream that is coated with, and forms smooth surface.Thereafter, the dielectric layer 8 of by sintering and solidify dielectric cream layer, cover scan electrode 4, keeping electrode 5 and light shield layer 7 will form.In addition, in the embodiments of the present invention,, form 2 layers of dielectric layer that constitutes 8 forming by the 1st dielectric layer 81 and the 2nd dielectric layer 82 by being coated with these dielectric cream at least repeatedly.In addition, dielectric cream is the coating of the dielectric glass, binding agent and the solvent that contain powder.
Next, on dielectric layer 8, form the protective layer of forming by magnesium oxide (MgO) 9 by vacuum vapour deposition.Like this, the component parts of regulation is formed on the front glass substrate 3, finishes front panel 2.
On the other hand, backplate 10 forms as follows.At first, be screen-printed to method on the back side glass substrate 11, use photoetching process to carry out patterned method etc. after perhaps on whole, forming metal film, form material layer as address electrode 12 usefulness formation thing by the lotion that will contain silver (Ag) material.Then, with set point of temperature agglomerated material layer, calculated address electrode 12.Then, on the back side of calculated address electrode 12 glass substrate 11, by coating dielectric cream such as casting Tu Fa, overlay address electrode 12 forms dielectric cream layer.By sintered dielectric cream layer, form base dielectric layer 13 thereafter.In addition, dielectric cream is to contain the dielectric glass of powder and the coating of binding agent and solvent.
Next, on base dielectric layer 13, be coated with the next door formation that contains the next door material and use lotion, shape according to the rules to carry out graphically, form the next door material layer, thereafter, form next door 14 by sintering.Here, as patterned method is carried out with lotion in the next door of coating on the base dielectric layer 13, can use photoetching process and the method (sandblast) that sandblasts.Then, by on the base dielectric layer 13 between the adjacent next door 14 and the coating of the side in next door 14 and sintering contain the fluorescence cream of fluorescent material, form fluorescence coating 15.Like this, on the glass substrate 11, the component parts of regulation is formed overleaf, and backplate 10 is finished.
Like this, with the mode of scan electrode 4 and address electrode 12 quadratures, configuration possesses the front panel 3 and the backplate 10 of the component parts of regulation relatively, and will seal around it with glass dust, the discharge gas that will contain Ne, Xe etc. is enclosed discharge space 16, and PDP1 has just finished.
Below, the show electrode 6 and the dielectric layer 8 of front panel 2 is described in detail.At first, show electrode 6 is described.Utilize sputtering method, go up the indium oxide (ITO) that formation thickness is about 0.12 μ m for whole of glass substrate 3 in front, thereafter, utilize photoetching process, forming width is strip like transparent electrode 4a, the 5a of 150 μ m.
Then, utilize print process etc., go up coating sensitization cream for whole of glass substrate 3 in front, form black electrode cream layer as black layer.In addition, in the sensitization cream that becomes black layer, contain as black material: percentage by weight is at least one in the composite oxide of metal of composite oxide of metal, copper (Cu) of composite oxide of metal, the nickel (Ni) of metal oxide, the cobalt (Co) of metal oxide, the copper (Cu) of metal oxide, the nickel (Ni) of ferrous metal particulate, the cobalt (Co) of ferrous metal particulate, the copper (Cu) of ferrous metal particulate, the nickel (Ni) of 5%～40% cobalt (Co); Percentage by weight is 10%～40% glass material; Percentage by weight is that 30%～60% contain photopolymer, photo-sensitive monomer, light overlap photonasty organic adhesive compositions such as beginning agent, solvent.That is to say that show electrode 6 contains the silver and the metal electrode layer of glass material and contains black material and a plurality of layers of the black layer of glass material constitute by comprising at least.
In addition, the glass material of black electrode cream layer contains percentage by weight and is 5%～25% bismuth oxide (Bi at least
2O
3), the softening point that makes glass material is above 500 ℃.In addition, ferrous metal particulate, metal oxide, composite oxide of metal as the cobalt (Co) of above-mentioned black material, nickel (Ni), copper (Cu) also have the function of partially conductive material.
Next, utilize print process etc., sensitization cream is coated on the black electrode cream layer, form white electrode cream layer.In addition, sensitization cream contains at least: percentage by weight is 70%～90% silver (Ag) particle; Percentage by weight is 1%～15% glass material; Percentage by weight is 8%～30% the photonasty organic adhesive composition that contains photopolymer, photo-sensitive monomer, light coincidence beginning agent, solvent etc.In addition, the glass material of white electrode cream layer contains percentage by weight and is 5%～25% bismuth oxide (Bi at least
2O
3), the softening point that makes glass material is above 550 ℃.
Use photoetching process, these are undertaken graphically by the black electrode cream layer of whole coating and white electrode cream layer.Then, under 550 ℃～600 ℃ temperature, graphical black electrode cream layer and white electrode cream layer are carried out sintering, on transparency electrode 4a, 5a, form black electrode 41b, 51b and white electrode 42b, 52b that live width is about 60 μ m.
Like this, in the embodiments of the present invention, cobalt (Co), nickel (Ni), copper (Cu) are used for black electrode 41b, 51b.And in the prior art, be by making black electrode 41b, 51b and light shield layer 7 contain chromium (Cr), manganese (Mn), iron (Fe), guaranteeing conductivity and degree of blackness.But, inventors find, by chromium (Cr), manganese (Mn), iron (Fe) are used for black electrode 41b, 51b, occurred that contact resistance value increases on the bed boundary of black electrode 41b, 51b and white electrode 42b, 52b, the tendency that the resistance value of electrode layer integral body is risen.Confirm that in addition this tendency is derived from the glass material composition of black electrode 41b, 51b or the one-tenth of dielectric layer 8 grades.
Below, explain orally at above-mentioned phenomenon.Usually, because the heat treatment in electrode sintering or the dielectric sintering process, the silver that comprises among white electrode 42b, the 52b (Ag) contacts each other, produces the conductivity of electrode.But as a rule, compositions such as electric conducting material that is comprised among black electrode 41b, the 51b and black material in the process of above-mentioned electrode sintering or dielectric sintering, move, spread to white electrode 42b, 52b, hinder the contact between the silver (Ag).But,, can suppress compositions such as electric conducting material contained among black electrode 41b, the 51b and black material and spread to white electrode 42b, 52b if black electrode 41b, 51b use cobalt (Co), nickel (Ni), copper (Cu).Its result can not hinder the contact between the silver (Ag).Therefore, can think, can make that the contact resistance value on the bed boundary of black electrode 41b, 51b and white electrode 42b, 52b reduces.
On the other hand, if chromium (Cr), manganese (Mn), iron (Fe) composition are included in the black electrode as black material and electric conducting material, when sintering, compositions such as electric conducting material that black electrode 41b, 51b are comprised and black material will be diffused into white electrode 42b, 52b so.Its result, the composition of diffusion will hinder the contact between the silver (Ag), and the contact resistance value on the above-mentioned bed boundary is risen.
In addition, prior art also discloses ruthenium (Ru) has been included in black electrode 41b, 51b and the light shield layer 7, guarantees the method for degree of blackness, conductance.But,, use ruthenium (Ru) will increase material cost because ruthenium (Ru) is valuable rare metal.Therefore, for the PDP that advances big pictureization, the departmental cost increase also can influence very big.Like this, in the enforcement of the present invention, just stipulate that essence uses ruthenium (Ru), so from viewpoints such as the reduction of material cost and resource savings, with respect to prior art, embodiments of the present invention have better effect.
In addition, be used for the glass material of black electrode 41b, 51b and white electrode 42b, 52b, preferably as mentioned above, bismuth oxide (Bi
2O
3) content be weight percentage 5%～25%, have again, also comprising percentage by weight is the molybdenum oxide (MoO below 7% more than 0.1%
3), tungsten oxide (WO
3) at least one.In addition, also can replace molybdenum oxide (MoO
3), tungsten oxide (WO
3), comprise percentage by weight and be 0.1%～7% cerium oxide (CeO
2), cupric oxide (CuO), cobalt oxide (Co
2O
3), vanadium oxide (V
2O
7), antimony oxide (Sb
2O
3) at least a.
In addition, as the composition outside above-mentioned, also can comprise the material that does not contain lead composition and form, promptly percentage by weight is that 0%～40% zinc oxide (ZnO), percentage by weight are 0%～35% boron oxide (B
2O
3), percentage by weight is 0%～15% silica (SiO
2), percentage by weight is 0%～10% aluminium oxide (Al
2O
3) etc.The content that these materials are formed is not particularly limited, and its scope is the content range that the material of prior art degree is formed.
In addition, among the present invention, the softening point temperature of glass material is made as more than 500 ℃, sintering temperature is made as 550 ℃～600 ℃.If as in the past, the softening point of glass material is lower 450 ℃～500 ℃, and sintering temperature will be higher than 100 ℃ of glass material softening points nearly so, reactive higher bismuth oxide (Bi
2O
3) itself with organic adhesive composition in silver (Ag) or ferrous metal particulate or the lotion intense reaction will take place.Its result can produce bubble in metal bus electrode 4b, 5b and in the dielectric layer 8, and the dielectric voltage withstand performance of dielectric layer 8 is worsened.On the other hand,, the softening point of glass material is made as more than 500 ℃ silver (Ag) and ferrous metal particulate or organic principle and bismuth oxide (Bi if as in the present invention
2O
3) reactivity will reduce, bubble be difficult for to take place.And if the softening point of glass material is made as more than 600 ℃, the caking property of metal bus electrode 4b, 5b and transparency electrode 4a, 5a, front glass substrate 3 or dielectric layer 8 will reduce, because of rather than best.
Below, detailed description constitutes the 1st dielectric layer 81 and the 2nd dielectric layer 82 of the dielectric layer 8 of front panel 2.The dielectric substance of the 1st dielectric layer 81 is made up of following material and is constituted.That is to say and comprise: percentage by weight is 5%～25% bismuth oxide (Bi
2O
3), percentage by weight is 0.5%～15% calcium oxide (CaO), in addition, also comprises percentage by weight and be 0.1%～7% molybdenum oxide (MoO
3), tungsten oxide (WO
3), cerium oxide (CeO
2), manganese oxide (MnO
2) at least a.
In addition, also comprise percentage by weight be 0.5%～12% from strontium oxide strontia (SrO), barium monoxide (BaO), select at least a.
In addition, also can replace molybdenum oxide (MoO
3), tungsten oxide (WO
3), cerium oxide (CeO
2), manganese oxide (MnO
2), be 0.1%～7% cupric oxide (CuO), chromium oxide (Cr and comprise percentage by weight
2O
3), cobalt oxide (Co
2O
3), vanadium oxide (V
2O
7), antimony oxide (8b
2O
3) at least a.
In addition, as the composition outside above-mentioned, also can comprise the material that does not contain lead composition and form, promptly percentage by weight is that 0%～40% zinc oxide (ZnO), percentage by weight are 0%～35% boron oxide (B
2O
3), percentage by weight is 0%～15% silica (SiO
2), percentage by weight is 0%～10% aluminium oxide (Al
2O
3) etc.The content that these materials are formed is not particularly limited, and its scope is the content range that the material on the prior art degree is formed.
Use the airslide disintegrating mill (Jet mill) or the ball mill of wet type, it is 0.5 μ m～2.5 μ m that the dielectric substance that these parts are constituted is ground into average grain diameter, makes the dielectric substance powder.Then, using 3 rollers (roll), be 55%～70% above-mentioned dielectric substance powder with percentage by weight with percentage by weight is that 30%～45% bonding component fully mixes, make casting being coated with or the 1st dielectric layer lotion of printing usefulness.
Then, use the 1st above-mentioned dielectric layer lotion, the utilization casting is coated with method or silk screen print method is printed with covering show electrode 6 front glass substrate 3, and makes its drying, with temperature a little more than dielectric substance softening point 575 ℃～590 ℃ carry out sintering thereafter.
Below, the 2nd dielectric layer 82 is described.The dielectric substance of the 2nd dielectric layer 82 is made up of following material and is constituted.That is to say and comprise: percentage by weight is 5%～25% bismuth oxide (Bi
2O
3), percentage by weight is 6.0%～28% barium monoxide (BaO).In addition, also can comprise percentage by weight is 0.1%～7% molybdenum oxide (MoO
3), tungsten oxide (WO
3), cerium oxide (CeO
2), manganese oxide (MnO
2) at least a.
Have again, also comprise percentage by weight and be 0.8%～17% from calcium oxide (CaO), strontium oxide strontia (SrO), select at least a.
In addition, also can replace molybdenum oxide (MoO
3), tungsten oxide (WO
3), cerium oxide (CeO
2), manganese oxide (MnO
2), be 0.1%～7% cupric oxide (CuO), chromium oxide (Cr and comprise percentage by weight
2O
3), cobalt oxide (Co
2O
3), vanadium oxide (V
2O
7), antimony oxide (Sb
2O
3) at least a.
In addition, as the composition outside above-mentioned, also can comprise the material that does not contain lead composition and form, promptly percentage by weight is that 0%～40% zinc oxide (ZnO), percentage by weight are 0%～35% boron oxide (B
2O
3), percentage by weight is 0%～15% silica (SiO
2), percentage by weight is 0%～10% aluminium oxide (Al
2O
3) etc.The content that these materials are formed is not particularly limited, and its scope is the content range that the material on the prior art degree is formed.
Use the airslide disintegrating mill (Jet mill) or the ball mill of wet type, it is 0.5 μ m～2.5 μ m that the dielectric substance that these parts are constituted is ground into average grain diameter, makes the dielectric substance powder.Then, using 3 rollers, be 55%～70% above-mentioned dielectric substance powder with percentage by weight with percentage by weight is that 30%～45% bonding component fully mixes, make casting being coated with or the 2nd dielectric layer lotion of printing usefulness.Then, use the 2nd above-mentioned dielectric layer lotion, utilize silk screen print method or casting to be coated in to print on the 1st dielectric layer 81 and make its drying, thereafter, carry out sintering for 550 ℃～590 ℃ with temperature a little more than the dielectric substance softening point.
In addition, the thickness of dielectric layer 8 is more little, and the effect that screen intensity improves and discharge voltage reduces is just remarkable more, so so long as in the scope that dielectric voltage withstand does not reduce, preferably set thickness less as far as possible.Based on the viewpoint of this condition and visible light transmissivity, in embodiments of the present invention, the thickness of dielectric layer 8 is set at below the 41 μ m, the 1st dielectric layer 81 is made as 5 μ m～15 μ m, the 2nd dielectric layer 82 is made as 20 μ m～36 μ m.
As above, the bismuth oxide (Bi that is comprised as dielectric layer 8 of the present invention
2O
3) amount, the 1st dielectric layer 81 and the 2nd dielectric layer 82 all are made as 5%～25% of percentage by weight in the lump as mentioned above.By bismuth oxide (Bi with dielectric layer 8
2O
3) amount be arranged to above-mentioned scope, just can optimize the degree of blackness of PDP, and can obtain softening point and dielectric constant as the regulation of dielectric layer 8.In addition, the bismuth oxide (Bi of the 1st dielectric layer 81 and the 2nd dielectric layer 82
2O
3) amount need not identical.
Make the PDP front panel that obtains like this, the contact resistance value of good number of its degree of blackness and metal electrode is low, under the situation of being used as the panel use, and the good PDP of contrast in the time of can obtaining the image demonstration.
(embodiment)
In order to confirm the effect of embodiments of the present invention, used the front panel that constitutes the HDTV (High-Definition Television) that is suitable for 42 inches, make test sample, estimate.
As the evaluation of degree of blackness, use said method on glass substrate, to form light shield layer 7, use said method formation dielectric layer 8 it being covered formed sample then, and carry out performance evaluation.
In general, lightness L
*Be to use JISZ8722 (assay method of color), the JISZ8729 (display packing-L of color
*a
*b
*Color specification system and L
*u
*v
*Color specification system) method of defined is obtained.In the embodiments of the present invention, use L
*a
*b
*Expression system represents degree of blackness, establishes L
*When value is low, degree of blackness strong (good).And, at L
*Be worth under the lower situation, use the PDP display image, contrast is higher.Under the embodiments of the present invention, L
*The beam split color difference meter NF999 that value is to use Japanese electric look Co., Ltd. to produce measures.
For measuring sample, be to use method same as described above to carry out graphically, make and measure formation 10mm angle, zone.Mensuration is that white plate is overlapped onto the face side, measures from glass substrate side (image demonstration side), in the substrate of 42 inches sizes, change the position and carry out 3 mensuration, with its mean value as measurement result.
Fig. 3 is the degree of blackness L of expression light shield layer 7
*Value with respect to the bismuth oxide (Bi of dielectric layer 8
2O
3) the variation diagram of amount.Under inventors' condition determination, if in the PDP image shows the L of light shield layer 7
*Value is below 10, just can obtain good contrast.Thus, as shown in Figure 3, L
*Value is 10 when following, the bismuth oxide (Bi of dielectric layer 8
2O
3) amount be exactly percentage by weight 5%～30%.
Though the concrete reason of above-mentioned phenomenon is not clear, but be commonly considered as, because the bismuth oxide (Bi in the dielectric layer 8 (refering in particular to the 1st dielectric layer 81 in embodiments of the present invention) that joins with the end of the back side of the demonstration side of light shield layer 7 or black electrode 41b, 51b
2O
3) influence produce.Can infer that according to this influence ferrous metal particulate, metal oxide, composite oxide of metal as the cobalt (Co) of black material, nickel (Ni), copper (Cu) are diffused into front glass substrate 3 sides, promptly on the picture display face, have improved degree of blackness.
Below, the research of the contact resistance value of show electrode 6 is narrated.In order to estimate the contact resistance value of show electrode 6, transparency electrode 4a, 5a, black electrode 41b, 51b and white electrode 42b, 52b on glass substrate, have been formed respectively with said method.Then, further use said method, form dielectric layer 8, make test sample to cover those electrodes.Then, measure the resistance value of this experimental sample, carry out performance evaluation by detector.In addition, in order to ignore the contact resistance of dielectric itself, sample is formed with leading-out terminal, has eliminated the influence of the contact resistance of dielectric layer 8.
Fig. 4 is the schematic diagram of contact resistance for the characteristic difference that comprises composition of black electrode 41b, 51b.In addition, with the bismuth oxide (Bi of dielectric layer 8
2O
3) content is made as percentage by weight 25% and 40%, come contact resistance value is compared research.In addition, contact resistance value is to use relative value to represent, establishes the bismuth oxide (Bi of dielectric layer 8
2O
3) content is percentage by weight 40%, the composition that black electrode 41b, 51b comprise is that the measurement result of the sample of chromium (Cr), manganese (Mn), iron (Fe) is 1.
By The above results as can be known: compare with the situation that comprises chromium (Cr), manganese (Mn), iron (Fe) in the composition of black electrode 41b, 51b, comprise in the composition of black electrode 41b, 51b under the situation of the employed cobalt of embodiments of the present invention (Co), nickel (Ni), copper (Cu), contact resistance is lower.Can think that this is because as mentioned above, if in the composition of black electrode 41b, 51b, comprise cobalt (Co), nickel (Ni), copper (Cu), compositions such as electric conducting material that black electrode 41b, 51b are comprised and black material will reduce the diffusion of each electrode layer, do not hinder the contact of silver (Ag) particle.
In addition, above-mentioned contact resistance value also depends on the bismuth oxide (Bi of dielectric layer 8
2O
3) content, as shown in Figure 4, this bismuth oxide (Bi
2O
3) amount be weight percentage 25% o'clock, contact resistance value is lower.
Have again, also investigated in embodiments of the present invention, the bismuth oxide (Bi in the glass material of the relative white electrode 42b of contact resistance, 52b
2O
3) bismuth oxide (Bi of content and dielectric layer 8
2O
3) variation of content.Its result represents in Fig. 5 and Fig. 6.Fig. 5 is the interior bismuth oxide (Bi of glass material of expression white electrode 42b, 52b
2O
3) content be weight percentage 25% o'clock, with respect to the bismuth oxide (Bi of dielectric layer 8
2O
3) variation diagram of contact resistance value of content.And Fig. 6 is the bismuth oxide (Bi of expression dielectric layer 8
2O
3) content be weight percentage 25% o'clock, with respect to the bismuth oxide (Bi in the glass material of white electrode 42b, 52b
2O
3) variation diagram of contact resistance value of content.In addition, same with Fig. 4, they are to use relative value to represent, establish the bismuth oxide (Bi of dielectric layer 8
2O
3) content is percentage by weight 40%, the composition that black electrode 41b, 51b comprise is that the measurement result of the sample of chromium (Cr), manganese (Mn), iron (Fe) is 1.
In embodiments of the present invention, if contact resistance value is a relative value below 0.9, the recruitment of the resistance value of show electrode integral body is also less so, can will show that to image the necessary influence that applies voltage suppresses lessly.As shown in Figure 5, contact resistance value is to be the bismuth oxide (Bi of dielectric layer 8 below 0.9
2O
3) content is exactly the situation of percentage by weight 5%～30%.On the other hand, the viewpoint of the inefficient power during from discharge requires dielectric constant lower for dielectric layer 8.Thus, the bismuth oxide (Bi of further preferred dielectric layer 8
2O
3) content is weight percentage below 25%.Therefore, to contain percentage by weight be the bismuth oxide (Bi below 25% more than 5% to preferred dielectric layer 8
2O
3).
In addition, as shown in Figure 6, contact resistance value is to be the bismuth oxide (Bi of white electrode 42b, 52b below 0.9
2O
3) content is exactly the situation of percentage by weight 5%～40%.On the other hand, the viewpoint of the softening point during from sintering, the further bismuth oxide (Bi of preferred white electrode 42b, 52b
2O
3) content is at percentage by weight below 25%.Therefore, the bismuth oxide (Bi of the glass material of preferable alloy electrode layer
2O
3) content be weight percentage more than 5% below 25%.
As mentioned above, in embodiments of the present invention, as PDP, the front panel of show electrode and dielectric layer will be formed with on the glass substrate, dispose relative with the backplate that is formed with electrode, next door and fluorescence coating on the substrate, and with sealing around it, form discharge space, show electrode is made of a plurality of layers that comprise the metal electrode layer that contains silver and glass material at least.And, have following feature: the bismuth oxide (Bi of dielectric layer
2O
3) content, be weight percentage more than 5% below 25%, the bismuth (Bi of the glass material of metal electrode layer
2O
3) content, be weight percentage more than 5% below 25%.In addition, the feature of black layer can also for, have at least one in the oxide of oxide, copper (Cu) of the oxide that contains cobalt (Co), nickel (Ni), copper (Cu), cobalt (Co), nickel (Ni).Thus, just can reduce the contact resistance value of show electrode, and can realize that degree of blackness is good, the higher PDP of image display quality.In addition, among the PDP of embodiments of the present invention, can suppress material cost, in addition, also consider the environment of not leaded (Pb).
In addition, as mentioned above, in embodiments of the present invention, as PDP, be a kind ofly will to be formed with the front panel of show electrode, light shield layer and dielectric layer on the glass substrate, dispose relative with the backplate that is formed with electrode, next door and fluorescence coating on the substrate, and with sealing around it, form the plasma display system of discharge space, show electrode is made of a plurality of layers that comprise metal electrode layer that contains silver and glass material and the black layer that contains black material and glass material at least.And black layer contains at least one in the oxide of oxide, copper (Cu) of oxide, the nickel (Ni) of cobalt (Co), nickel (Ni), copper (Cu), cobalt (Co).In addition, the feature of dielectric layer can also be bismuth oxide (Bi
2O
3) content be weight percentage more than 5% 25%.Thus, just can reduce the contact resistance value of show electrode, and can realize that degree of blackness is good, the higher PDP of image display quality.
Utilize possibility on the industry
As mentioned above, the present invention can realize that image display comparison degree is good and take environmental problem into account PDP, very useful to big picture display device etc.
Claims (3)
1. a Plasmia indicating panel will be formed with the front panel of show electrode and dielectric layer on the glass substrate, dispose relative with the backplate that is formed with electrode, next door and fluorescence coating on the substrate, and sealing forms discharge space on every side, in this plasma display floater,
Described show electrode is made of a plurality of layers that comprise the metal electrode layer that contains silver and glass material at least,
The bismuth oxide content of described dielectric layer be weight percentage more than 5% below 25%, the bismuth oxide content in the glass material of described metal electrode layer be weight percentage more than 5% below 25%.
2. Plasmia indicating panel according to claim 1 is characterized in that,
Described show electrode comprises the black layer that contains black material and glass material,
Described black layer contains at least one in the oxide of oxide, copper of oxide, the nickel of cobalt, nickel, copper, cobalt.
3. Plasmia indicating panel, to be formed with the front panel of show electrode, light shield layer and dielectric layer on the glass substrate, dispose relative with the backplate that is formed with electrode, next door and fluorescence coating on the substrate, and sealing forms discharge space on every side, in this plasma display floater
Described show electrode contains the silver and the metal electrode layer of glass material and contains black material and a plurality of layers of the black layer of glass material constitute by comprising at least,
Described black layer contains at least one in the oxide of oxide, copper of oxide, the nickel of cobalt, nickel, copper, cobalt,
In the described dielectric layer, bismuth oxide content be weight percentage more than 5% below 25%.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007108915A JP2008269861A (en) | 2007-04-18 | 2007-04-18 | Plasma display panel |
| JP108915/2007 | 2007-04-18 | ||
| JP108916/2007 | 2007-04-18 |
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| Publication Number | Publication Date |
|---|---|
| CN101584016A true CN101584016A (en) | 2009-11-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
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|---|---|---|---|---|
| CN103794440A (en) * | 2011-12-31 | 2014-05-14 | 四川虹欧显示器件有限公司 | Front substrate for plasma display screen and plasma display screen containing front substrate |
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| JP3986312B2 (en) * | 2001-12-20 | 2007-10-03 | 太陽インキ製造株式会社 | Black paste composition and plasma display panel using the black paste composition |
| JP2004063247A (en) * | 2002-07-29 | 2004-02-26 | Matsushita Electric Ind Co Ltd | Process of manufacture of plasma display panel |
| US7384577B2 (en) * | 2005-03-09 | 2008-06-10 | E.I. Du Pont De Nemours And Company | Black conductive thick film compositions, black electrodes, and methods of forming thereof |
| JP4089740B2 (en) * | 2005-10-03 | 2008-05-28 | 松下電器産業株式会社 | Plasma display panel |
| WO2007040142A1 (en) * | 2005-10-03 | 2007-04-12 | Matsushita Electric Industrial Co., Ltd. | Plasma display panel |
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| CN103794440A (en) * | 2011-12-31 | 2014-05-14 | 四川虹欧显示器件有限公司 | Front substrate for plasma display screen and plasma display screen containing front substrate |
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