CN101579837A - Polishing pad adjusting device for chemical-mechanical polishing - Google Patents

Polishing pad adjusting device for chemical-mechanical polishing Download PDF

Info

Publication number
CN101579837A
CN101579837A CNA200810037311XA CN200810037311A CN101579837A CN 101579837 A CN101579837 A CN 101579837A CN A200810037311X A CNA200810037311X A CN A200810037311XA CN 200810037311 A CN200810037311 A CN 200810037311A CN 101579837 A CN101579837 A CN 101579837A
Authority
CN
China
Prior art keywords
adjusting device
brush
diamond disc
polishing pad
grinding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA200810037311XA
Other languages
Chinese (zh)
Inventor
周维娜
赵铁军
刘庚申
王怀锋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Manufacturing International Shanghai Corp
Original Assignee
Semiconductor Manufacturing International Shanghai Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Manufacturing International Shanghai Corp filed Critical Semiconductor Manufacturing International Shanghai Corp
Priority to CNA200810037311XA priority Critical patent/CN101579837A/en
Publication of CN101579837A publication Critical patent/CN101579837A/en
Pending legal-status Critical Current

Links

Images

Abstract

The invention provides a polishing pad adjusting system for chemical-mechanical polishing, wherein the system comprises a diamond disc and a brush which is in synchronized motion with the diamond disc. The system can improve the effect of eliminating residual sizing agents and residual particles in a polishing pad during the CMP process, reduce the defects formed on the surface of a chip during the CMP process and prolong the service life of the polishing pad.

Description

A kind of polishing pad adjusting device that is used for chemically mechanical polishing
Technical field
The present invention relates to the chemical Mechanical Polishing Technique field, be specifically related to a kind of polishing pad adjusting device that is used for chemically mechanical polishing.
Background technology
Planarization has become with photoetching and etching is of equal importance and one of complementary indispensable key technology in the IC manufacturing process.And chemically mechanical polishing (CMP) technology is effective, the most ripe present planarization.Chemical-mechanical polishing system is the chemical-mechanical planarization technology that integrates technology such as cleaning, drying, online detection, end point determination.Be the product of integrated circuit (IC) to miniaturization, multiple stratification, planarization, slimming development, be that integrated circuit enters the following technology node of 0.13 μ m, by φ 200mm wafer to the transition of φ 300mm wafer, enhance productivity, reduce cost, the indispensable technology of wafer overall situation planarization.
Figure 1 shows that the vertical view of the structure of current main-stream CMP equipment, it mainly comprises grinding head (Polishing head) 30, places grinding pad (Pad) 40, slurry conveyer (Slurry delivery) 20 and polishing pad adjusting device (Pad Conditioner) 11 above the grinding plate.Wherein in the grinding head 30 silicon chip that needs cmp is housed, under the effect of certain downforce (Down force), silicon chip surface film and grinding pad 40 and slurry interact and realize chemically mechanical polishing, and grinding head 30 relative grinding pads 40 are done rectilinear motion and the circular motion of self; Slurry conveyer 20 is mainly used to provide needed slurry when grinding, and wherein slurry is the material of a kind of key in the CMP process, grinds different films and selects different slurries, and it has very big influence to speed, the quality of finish of CPP; Grinding pad 40 is made by porous, resilient polymer usually, have certain degree of hardness, durability, recyclability, porous and fillibility, can under absorption ground slurry and pressure, be transported to silicon chip surface at anchor clamps, according to different CMP requirements, we can select different grinding pad 40.In grinding pad 40 and grinding head 30 interactional uses, grinding pad 40 can become smoothly, and polishing pad adjusting device 11 mainly is to be used to readjust the new slurry that grinding pad surface, the used slurry of removal and even again distributed slurry conveyer provide.
Usually in the CMP process, because problems such as material, technology can cause in defectives such as silicon chip film surface formation scratch, surface particles.For example, after the chip oxide surface caused scratch, copper can be inserted in the scratch, and the fine wire of this copper is usually only just seen at microscopically, and this can cause short circuit or influence each other and cause reliability decrease.Wherein owing to the action effect of removing used slurry in the process of polishing pad adjusting device work is not obvious, the final defective that also can cause CMP, this mainly is because after formerly grinding pad once and grinding head interact, can stay residual slurry and particle in the middle of grinding pad.Current polishing pad adjusting device mainly comprises a diamond disc as shown in Figure 2, grinds the downforce of adjusting device in the course of the work by adjustment, thereby adjusts the effect between diamond disc and the grinding pad, thereby reaches the function of grinding adjusting device.The problem of current main existence is: the grinding adjusting device that comprises diamond disc in this stays residual slurry in the middle of grinding pad and the particle effect is not obvious removing; And mainly be to optimize by the method for strengthening applying downforce to remove residual slurry and particle in the grinding pad, the service life that this method can influence the uniformity of grinding rate and reduce grinding pad.
Summary of the invention
The invention provides the polishing pad adjusting device that uses in a kind of chemical-mechanical polisher, in the CMP process, can effectively remove remaining slurry and residual particles thereof in the grinding pad, thereby reduce the defective that is formed at chip surface in the CMP process, and prolong the service life of grinding pad.
A kind of polishing pad adjusting device that is used for chemically mechanical polishing disclosed in this invention, polishing pad adjusting device comprise diamond disc and the brush that can be synchronized with the movement with diamond disc.
Preferably, described brush be positioned at diamond disc around.
Described diamond disc and brush can be connected in one, and be non-dismountable; Diamond disc also can link together both by connectors such as screw threads for two parts that separate with brush.
Brush in the polishing pad adjusting device and diamond disc are done the mechanical movement with respect to grinding pad synchronously, remove the remaining slurry be distributed in the grinding pad and particle thereof etc. when described brush mainly moves with diamond disc.
Described polishing pad adjusting device also comprises also pressure regulator that is connected in described brush and described diamond disc, is used to adjust the pressure between grinding pad and diamond disc, the brush.
Described polishing pad adjusting device also can also be to comprise that the pressure regulator that is connected in described brush is connected in the pressure regulator of the described diamond disc of described brush with another, is respectively applied for the pressure of adjusting between grinding pad and brush, grinding pad and the diamond disc.
The present invention is brush of additional increase around the diamond disc of polishing pad adjusting device, make polishing pad adjusting device of the present invention do and grinding pad between relative motion the time, diamond disc and brush are synchronized with the movement, can readjust the grinding pad surface, remove the new slurry that used slurry and even again distributed slurry conveyer provide.Simultaneously, additional brush can also be removed remaining slurry and residual particles thereof in the grinding pad more effectively, thereby reduces the defective that is formed at chip surface in the CMP process, and prolongs the service life of grinding pad.
Description of drawings
Fig. 1 is CMP structure drawing of device commonly used;
Fig. 2 is the diamond disc in the polishing pad adjusting device;
Fig. 3 is the diamond disc of polishing pad adjusting device and the XY plan view of brush;
Fig. 4 is the diamond disc of polishing pad adjusting device and the XZ plan view of brush;
Fig. 5 comprises the sectional view of first embodiment of pressure regulator for polishing pad adjusting device;
Fig. 6 comprises the sectional view of second embodiment of pressure regulator for polishing pad adjusting device.
Symbol description:
1: brush 2: the bristle 3 on the brush: diamond disc
4: texture 10: 5: the first pressure regulators of polishing pad adjusting device
Air cavity in 51: the first pressure regulators of 6: the second pressure regulators
7: the three pressure regulators of the air cavity of 61: the second pressure regulators
Air cavity in 71: the three pressure regulators
The specific embodiment
For a better understanding of the present invention, one embodiment of the present of invention are described below with reference to accompanying drawings.In all accompanying drawings, identical identifier is represented same or similar part.
Figure 3 shows that the diamond disc of an embodiment of polishing pad adjusting device of the present invention and the XY plan view of brush, Fig. 4 is the diamond disc of an embodiment of polishing pad adjusting device of the present invention and the XZ plan view of brush.According to Fig. 3 and shown in Figure 4, polishing pad adjusting device 10 comprises bristle 2, the diamond disc 3 on brush 1, the brush.Brush 1 and diamond disc 3 be two can separated components, the internal diameter of brush 1 equals the external diameter of diamond disc, brush 1 is locked on disk perimeter, so brush and diamond disc can be fixed together and do the mechanical movement with respect to grinding pad (combining shown in Figure 1); Bristle 2 on the brush place diamond disc 3 around, generally constitute the length of brush bristles, selected material and not limited by the present embodiment scope with the relative position of diamond disc 3 by porous polymer; When brush and diamond disc are done mechanical movement with respect to grinding pad, act on the grinding pad by bristle 2, physical action is removed the residual particles that the pulp particle that remains in behind the last silicon chip grinding in the grinding pad and CMP produce etc., therefore can further strengthen the effect that polishing pad adjusting device is removed residual particles.Diamond disc 3 surfaces are with diamond particles and texture 4, be mainly used to realize readjusting to the roughness of grinding pad, thereby guarantee the uniformity of each CMP speed, simultaneously, diamond disc 3 is when doing relative mechanical movement with grinding pad, can and again evenly the new slurry that provides of distributed slurry conveyer in grinding pad, thereby can better bring into play the effect of slurry in grinding; The shape of texture 4 patterns is not subjected to the restriction of present embodiment scope.Because the minimizing of the residual particles that pulp particle in the grinding pad and CMP produce, can reduce the physical imperfection that chip surface forms in the CMP process, as slide mark, particle etc., and prevent that remaining slurry and particle thereof the grinding pad of crystallization on grinding pad in the long-term CMP course of work lost efficacy.
Further, the pressure regulator in conjunction with being connected in brush or diamond disc is described further polishing pad adjusting device, and brush and diamond disc can shared pressure regulators, also can be respectively with two different pressure regulators.Figure 5 shows that polishing pad adjusting device comprises the sectional view of an embodiment of pressure regulator.As shown in Figure 5, unfixing between diamond disc 3 and the brush 1, first pressure regulator 5 that is connected in diamond disc 3 is used for realizing the downforce adjustment to diamond disc 3, and second pressure regulator 6 that is connected in brush 1 is used for realizing the downforce adjustment to brush 1.51 is air chambers in first pressure regulator 5, by regulating the pressure of air chamber, can regulate the downforce of diamond disc 3.61 is air chambers in second pressure regulator 6, by regulating the pressure of air chamber, and downforce that can brush 1, thus adjust active force between bristle 2 and the grinding pad.By adjusting downforce, can adjust the effect of removing residual particles.For example, we can regulate the active force of diamond disc to grinding pad by regulating first pressure regulator 5, readjust the grinding pad surface, remove used slurry and again evenly under the condition of the functions such as new slurry that provide of distributed slurry conveyer satisfying, can select minimum downforce, thereby improve the service life of grinding pad.
Figure 6 shows that polishing pad adjusting device comprises the sectional view of another embodiment of pressure regulator.As shown in Figure 6, be connected and fixed between diamond disc 3 and the brush 1, the 3rd pressure regulator 7 that is connected in diamond disc 3 and brush 1 is used for realizing the downforce adjustment to diamond disc 3 and brush 1.71 is air chambers in the 3rd pressure regulator 7, by the pressure of adjusting air chamber, and the downforce that can regulate diamond disc 3 and brush 1, diamond disc 3 and brush have onesize downforce in this embodiment.
Under situation without departing from the spirit and scope of the present invention, can also constitute many very embodiment of big difference that have.Should be appreciated that except as defined by the appended claims, the invention is not restricted at the specific embodiment described in the specification.

Claims (7)

1. a polishing pad adjusting device comprises diamond disc, it is characterized in that, also comprises brush, and described brush and described diamond disc are synchronized with the movement.
2. polishing pad adjusting device according to claim 1 is characterized in that, described brush be positioned at diamond disc around.
3. polishing pad adjusting device according to claim 1 is characterized in that described brush and diamond disc connect as one.
4. polishing pad adjusting device according to claim 1 is characterized in that, described brush and diamond disc are separable.
5. polishing pad adjusting device according to claim 1 is characterized in that, described being synchronized with the movement is the mechanical movement of polishing pad adjusting device with respect to grinding pad.
6. polishing pad adjusting device according to claim 1 is characterized in that, described device also comprises a pressure regulator that is connected in described brush and described diamond disc.
7. polishing pad adjusting device according to claim 1 is characterized in that, described device comprises that also the pressure regulator that is connected in described brush is connected in the pressure regulator of the described diamond disc of described brush with another.
CNA200810037311XA 2008-05-13 2008-05-13 Polishing pad adjusting device for chemical-mechanical polishing Pending CN101579837A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNA200810037311XA CN101579837A (en) 2008-05-13 2008-05-13 Polishing pad adjusting device for chemical-mechanical polishing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA200810037311XA CN101579837A (en) 2008-05-13 2008-05-13 Polishing pad adjusting device for chemical-mechanical polishing

Publications (1)

Publication Number Publication Date
CN101579837A true CN101579837A (en) 2009-11-18

Family

ID=41362218

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA200810037311XA Pending CN101579837A (en) 2008-05-13 2008-05-13 Polishing pad adjusting device for chemical-mechanical polishing

Country Status (1)

Country Link
CN (1) CN101579837A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104690648A (en) * 2013-12-05 2015-06-10 天津中环领先材料技术有限公司 Special brush for polishing pad with wax polishing function
CN104916536A (en) * 2014-03-13 2015-09-16 中芯国际集成电路制造(上海)有限公司 Chemical mechanical polishing method
CN106272075A (en) * 2015-05-22 2017-01-04 中芯国际集成电路制造(上海)有限公司 Grinding pad trimming device and grinding pad method for trimming
CN110625528A (en) * 2019-09-09 2019-12-31 西安奕斯伟硅片技术有限公司 Polishing pad dressing device and dressing method
CN112091811A (en) * 2016-03-31 2020-12-18 Hoya株式会社 Carrier and method for manufacturing substrate using the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104690648A (en) * 2013-12-05 2015-06-10 天津中环领先材料技术有限公司 Special brush for polishing pad with wax polishing function
CN104916536A (en) * 2014-03-13 2015-09-16 中芯国际集成电路制造(上海)有限公司 Chemical mechanical polishing method
CN104916536B (en) * 2014-03-13 2018-09-21 中芯国际集成电路制造(上海)有限公司 A kind of method of chemical mechanical grinding
CN106272075A (en) * 2015-05-22 2017-01-04 中芯国际集成电路制造(上海)有限公司 Grinding pad trimming device and grinding pad method for trimming
CN106272075B (en) * 2015-05-22 2019-05-31 中芯国际集成电路制造(上海)有限公司 Grinding pad trimming device and grinding pad dressing method
CN112091811A (en) * 2016-03-31 2020-12-18 Hoya株式会社 Carrier and method for manufacturing substrate using the same
CN112091811B (en) * 2016-03-31 2022-09-06 Hoya株式会社 Carrier and method for manufacturing substrate using the same
CN110625528A (en) * 2019-09-09 2019-12-31 西安奕斯伟硅片技术有限公司 Polishing pad dressing device and dressing method
CN110625528B (en) * 2019-09-09 2022-02-01 西安奕斯伟材料科技有限公司 Polishing pad dressing device and dressing method

Similar Documents

Publication Publication Date Title
WO2001062436A1 (en) Method and apparatus for polishing outer peripheral chamfered part of wafer
US9630295B2 (en) Mechanisms for removing debris from polishing pad
CN100561677C (en) The method of flattening wafer surface
JP2000091280A (en) Semiconductor polishing apparatus and polishing of semiconductor substrate
US5769691A (en) Methods and apparatus for the chemical mechanical planarization of electronic devices
CN101579837A (en) Polishing pad adjusting device for chemical-mechanical polishing
Achuthan et al. Investigation of pad deformation and conditioning during the CMP of silicon dioxide films
US20190193245A1 (en) Chemical-mechanical planarization (cmp) pad conditioner brush-and-abrasive hybrid for multi-step, preparation- and restoration-conditioning process of cmp pad
US6227949B1 (en) Two-slurry CMP polishing with different particle size abrasives
CN110546740A (en) Method for polishing silicon wafer
US6390902B1 (en) Multi-conditioner arrangement of a CMP system
KR100832768B1 (en) Wafer polishing apparatus and method for polishing wafers
US6102778A (en) Wafer lapping method capable of achieving a stable abrasion rate
TWI272672B (en) Process for the abrasive machining of surfaces, in particular of semiconductor wafers
US20170008146A1 (en) Chemical mechanical planarization conditioner
CN107263301B (en) A kind of method of grinding-chemically mechanical polishing gallium nitride wafer piece
WO2015015706A1 (en) Dressing method and dressing device
US7201633B2 (en) Systems and methods for wafer polishing
US6599174B1 (en) Eliminating dishing non-uniformity of a process layer
KR102515998B1 (en) Methods of Polishing Semiconductor Substrates Adjusting for Pad-to-Pad Variation
US20210242035A1 (en) Methods for processing semiconductor wafers having a polycrystalline finish
CN114346893B (en) Chemical mechanical polishing method
JP2001219364A (en) Abrasive pad, polishing method and method of manufacturing work piece by using abrasive pad
KR100621754B1 (en) Wafer carrier and chemical mechanical polisher including the same
CN100482419C (en) Polishing pad and chemical and mechanical polishing method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20091118