CN101578614A - Nonvolatile storage device, nonvolatile storage system, and access device - Google Patents

Abstract

When an access device accesses a nonvolatile memory device, the nonvolatile memory device or the access device detects or calculates a temperature T of the nonvolatile memory device. A temperature-adaptive control part of the nonvolatile memory device controls an access rate to a nonvolatile memory on the basis of the temperature T. Accordingly, the control part controls the rate so that the temperature T of the nonvolatile memory devices cannot exceed a limit temperature Trisk. In this manner, a nonvolatile memory system can eliminate a risk of a burn when ejecting the semiconductor memory device and can read and write data at a high speed.

Description

Nonvolatile memory devices, Nonvolatile memory system and access device

Technical field

[0001] the present invention relates to have Nonvolatile memory devices, the access device of access Nonvolatile memory devices and the Nonvolatile memory system that comprises these devices of the semiconductor memory card etc. of nonvolatile memory.

Background technology

[0002] be center of gravity with the semiconductor memory card, the Nonvolatile memory devices with erasable nonvolatile memory is winning widespread demand.Compare with CD or belt medium etc., the semiconductor memory card price is higher relatively.But, that semiconductor memory card has is small-sized, light weight, numerous advantages such as shatter-proof, easy-to-use, recording medium as portable sets such as digital camera or mobile phones is widely used, and also is used as the recording medium of family expenses camera-shooting and recording device and broadcasting station specialty camera-shooting and recording device recently.In addition, not only on portable set, on fixed equipments such as Digital Television and DVD recorder, also use slot as standard configuration semiconductor memory card.Thereby, the rest image that can on Digital Television, watch digital camera to take, the dynamic image that civilian camera-shooting and recording device is taken also can be transcribed on the DVD recorder.

[0003] this semiconductor memory card uses flash memory as non-volatile main memory, and has the Memory Controller that it is controlled.Memory Controller is according to the device that flash memory is carried out data read-write control from the reading and writing data indication of access devices such as digital camera body.

[0004] in recent years, in order to tackle high-qualityization of AV content of rest image and dynamic image etc., i.e. the high capacity of per unit amount of content data improves day by day to the demand of the high capacity of semiconductor memory card.Match therewith, when requiring to have the AV content that in semiconductor memory card, writes down and transcribing on the recording medium of the built-in hard disk of DVR or PC, DVD recorder etc. with the performance of higher speed from the semiconductor memory card sense data.And with higher speed data are write the performance of semiconductor memory card when requiring to have the AV content that in recording medium, writes down and transcribing in the semiconductor memory card with hard disk etc.Just, shorten the time that allows the user wait for by record data are transcribed at a high speed between recording medium, this will become very important from now on.

[0005], parallel access technology and the connection semiconductor memory card of patent documentation 2 announcements and the bus high speed technology between the access device etc. of the flash memory of patent documentation 1 announcement is arranged as prior art in order to the data high-speed read-write in the control semiconductor memory card.

[0006] in general, when carrying out reading and writing data at high speed, it is very high that the surface temperature of main device and semiconductor memory card can become, the result, and when main device took out, the user had the danger of being scalded with semiconductor memory card.The prior art of surveying this heating and controlling is on the books in patent documentation 3.This technology by surveying MPU the temperature and the switching situation of connector cover and the work clock of changing MPU prevent that temperature from rising.

Patent documentation 1: Japanese Unexamined Patent Application Publication 2000-510634 communique

Patent documentation 2: TOHKEMY 2003-223623 communique

Patent documentation 3: Japanese kokai publication hei 9-237129 communique

[0007] still, if carry out reading and writing data excessively at high speed, then can make the surface temperature of semiconductor memory card very high mainly due to the heating of flash memory, the result, the user when access device takes out, has the danger of scald with semiconductor memory card.

[0008] has again, in above-mentioned patent documentation 3 public technologies, only come the conversion work clock with the switching situation of connector cover.Thereby if the connector that the Nonvolatile memory devices of semiconductor memory card etc. is inserted uncovered carries out high speed read-write, the work clock that just can not suitably change MPU suppresses to generate heat.In addition, owing to do not consider the access rate of Nonvolatile memory devices and the relation of temperature variation, can not set only access rate.And, in general, do not allow when recording a video on the way to stop to shoot with video-corder, in the patent documentation 3 disclosed technology, can not consider with the relation of temperature variation and set suitable access rate, therefore, there is the possibility that stops to shoot with video-corder because of heating.

Summary of the invention

[0009] in view of above-mentioned problem, the present invention is intended to eliminate the danger of scald by suppressing heating, and provide can the high speed reads write data Nonvolatile memory devices, main device and Nonvolatile memory system.

[0010] in order to solve above-mentioned problem, Nonvolatile memory devices of the present invention is according to the Nonvolatile memory devices of reading and writing that carries out data from the access indication of outside, possess storage nonvolatile memory of data and the Memory Controller that above-mentioned nonvolatile memory is read and write data, above-mentioned Memory Controller has the access rate control part that comes the access rate that control data reads or write according to the condition of work of reading or write fashionable above-mentioned Nonvolatile memory devices of above-mentioned data.

[0011] so also can: above-mentioned condition of work is the temperature of above-mentioned Nonvolatile memory devices, above-mentioned access rate control part has temperature detecting part and temperature adaptation type control part, temperature detecting part detects the temperature of above-mentioned Nonvolatile memory devices, temperature adaptation type control part is kept at and limits under the temperature dangerous in the use of above-mentioned Nonvolatile memory devices is that the 1st threshold temperature and the safe temperature lower than above-mentioned the 1st threshold temperature are the 2nd threshold temperature, the temperature of measuring at the said temperature test section becomes and stops access when being higher than above-mentioned the 1st threshold temperature, and the temperature of measuring at the said temperature test section becomes restarts access when being lower than above-mentioned the 2nd threshold temperature.

[0012] so also can: the temperature adaptation type control part of above-mentioned access rate control part is preserved the 3rd threshold temperature of the state of temperature vicinity dangerous in the use of expression and above-mentioned Nonvolatile memory devices, the temperature of measuring at the said temperature test section becomes when being higher than above-mentioned the 3rd threshold temperature carries out access rate control, and access rate is reduced.

[0013] so also can: the said temperature test section comprises temperature sensor.

[0014] so also can: above-mentioned access rate control part has the status information generating unit, the status information that generates the above-mentioned Nonvolatile memory devices state of expression also with above-mentioned state information notification to outside.

[0015] so also can: above-mentioned status information is made as the information of temperature of the above-mentioned Nonvolatile memory devices of expression.

[0016] so also can: the temperature that above-mentioned status information is made as the above-mentioned Nonvolatile memory devices of indication is higher than above-mentioned Nonvolatile memory devices and uses and go up under the dangerous temperature the i.e. warning message of the state of the 1st threshold temperature of limit.

[0017] so also can: above-mentioned status information is made as expression and whether is carrying out the access rate control implementation information of above-mentioned access rate control.

[0018] so also can: above-mentioned status information is made as expression and begins temperature until above-mentioned Nonvolatile memory devices from access and reach above-mentioned Nonvolatile memory devices and use and go up under the dangerous temperature the i.e. read-write permitted hours of the time of the 1st threshold temperature of limit.

[0019] so also can: above-mentioned status information be made as the temperature that is illustrated in above-mentioned Nonvolatile memory devices reach above-mentioned Nonvolatile memory devices use go up limit under the dangerous temperature promptly can be till the 1st threshold temperature to the read-write permission amount of the data volume of above-mentioned Nonvolatile memory devices read-write.

[0020] so also can: above-mentioned condition of work is the temperature of above-mentioned Nonvolatile memory devices, above-mentioned access rate control part has temperature computation portion and temperature adaptation type control part, the temperature of above-mentioned non-volatile apparatus is calculated with access rate with above-mentioned access rate is carried out reading and writing data to above-mentioned non-volatile apparatus time by temperature computation portion as variograph, temperature adaptation type control part is preserved and limit under the upward dangerous temperature of above-mentioned Nonvolatile memory devices use is that the 1st threshold temperature and the safe temperature lower than above-mentioned the 1st threshold temperature are the 2nd threshold temperature, the temperature of measuring at the said temperature test section becomes and stops access when being higher than above-mentioned the 1st threshold temperature, and the temperature of calculating at the said temperature calculating part becomes restarts access when being lower than above-mentioned the 2nd threshold temperature.

[0021] so also can: the temperature adaptation type control part of above-mentioned access rate control part is preserved expression and above-mentioned Nonvolatile memory devices and is used the 3rd threshold temperature of going up the state that dangerous temperature closes on, and carries out the access rate control that access rate is reduced when the temperature that the said temperature calculating part is calculated is higher than above-mentioned the 3rd threshold temperature.

[0022] so also can: above-mentioned condition of work is the data volume during to above-mentioned Nonvolatile memory devices access, above-mentioned access rate control part has the epharmonic access rate control part of data volume, based on above-mentioned data volume decision access rate, above-mentioned Nonvolatile memory devices is no more than under the upward dangerous temperature of above-mentioned Nonvolatile memory devices use limits i.e. the 1st threshold temperature, and notify the outside above-mentioned access rate.

[0023] so also can: above-mentioned condition of work is the temperature of above-mentioned Nonvolatile memory devices, above-mentioned access rate control part has temperature preservation portion and temperature adaptation type control part, the temperature of the above-mentioned Nonvolatile memory devices that provides from the outside is provided in temperature preservation portion, temperature adaptation type control part is preserved and limit under the upward dangerous temperature of above-mentioned Nonvolatile memory devices use is that the 1st threshold temperature and the safe temperature lower than above-mentioned the 1st threshold temperature are the 2nd threshold temperature, and become in the temperature that said temperature preservation portion preserves and to stop access when being higher than above-mentioned the 1st threshold temperature, the temperature of preserving in said temperature preservation portion becomes restarts access when being lower than above-mentioned the 2nd threshold temperature.

[0024] so also can: the temperature adaptation type control part of above-mentioned access rate control part, preserve expression and above-mentioned Nonvolatile memory devices and use the 3rd threshold temperature of going up the state that dangerous temperature closes on, and the temperature of preserving in said temperature preservation portion becomes and carries out the access rate control that access rate is reduced when being higher than above-mentioned the 3rd threshold temperature.

[0025] so also can: above-mentioned condition of work is the temperature of above-mentioned Nonvolatile memory devices, above-mentioned access rate control part has temperature computation portion and temperature adaptation type control part, environment temperature when the temperature of the above-mentioned Nonvolatile memory devices that temperature computation portion provides the outside begins as access, and calculate the temperature of Nonvolatile memory devices based on this environment temperature and access time, temperature adaptation type control part is preserved and limit under the upward dangerous temperature of above-mentioned Nonvolatile memory devices use is that the 1st threshold temperature and the safe temperature lower than above-mentioned the 1st threshold temperature are the 2nd threshold temperature, and become in the temperature that the said temperature calculating part is calculated and to stop access when being higher than above-mentioned the 1st threshold temperature, the temperature of calculating at the said temperature calculating part becomes restarts access when being lower than above-mentioned the 2nd threshold temperature.

[0026] so also can: the temperature adaptation type control part of above-mentioned access rate control part is preserved expression and above-mentioned Nonvolatile memory devices and is used the 3rd threshold temperature of going up the state that dangerous temperature closes on, and becomes in the temperature that the said temperature calculating part is calculated and to carry out the access rate control that access rate is reduced when being higher than above-mentioned the 3rd threshold temperature.

[0027] in order to address the above problem, Nonvolatile memory system of the present invention is to have access device and according to the Nonvolatile memory system that carries out the Nonvolatile memory devices of reading and writing of data from the access of above-mentioned access device indication, above-mentioned Nonvolatile memory devices has the nonvolatile memory of storage data and the Memory Controller that above-mentioned nonvolatile memory is read and write data, and above-mentioned Memory Controller has the access rate control part that comes the access rate of reading or writing of control data according to the condition of work of reading or write fashionable above-mentioned Nonvolatile memory devices of above-mentioned data.

[0028] so also can: above-mentioned condition of work is the temperature of above-mentioned Nonvolatile memory devices, above-mentioned access rate control part has temperature detecting part and temperature adaptation type control part, temperature detecting part detects the temperature of above-mentioned Nonvolatile memory devices, temperature adaptation type control part is preserved and limit under the upward dangerous temperature of above-mentioned Nonvolatile memory devices use is that the 1st threshold temperature is the 2nd threshold temperature with the safe temperature that is lower than above-mentioned the 1st threshold temperature, the temperature of measuring at the said temperature test section becomes and stops access when being higher than above-mentioned the 1st threshold temperature, and the temperature of measuring at the said temperature test section becomes restarts access when being lower than above-mentioned the 2nd threshold temperature.

[0029] so also can: the temperature adaptation type control part of above-mentioned access rate control part is preserved expression and above-mentioned Nonvolatile memory devices and is used the 3rd threshold temperature of going up the state that dangerous temperature closes on, and becomes in the temperature that the said temperature test section is measured and to carry out the access rate control that access rate is reduced when being higher than above-mentioned the 3rd threshold temperature.

[0030] so also can: the said temperature test section comprises temperature sensor.

[0031] so also can: above-mentioned access rate control part has the status information generating unit, generates the status information of the state of the above-mentioned Nonvolatile memory devices of expression, and with the above-mentioned access device of above-mentioned state information notification.

[0032] so also can: above-mentioned condition of work is meant the temperature of above-mentioned Nonvolatile memory devices, above-mentioned access rate control part has temperature computation portion and temperature adaptation type control part, the temperature of above-mentioned non-volatile apparatus is calculated with access rate with above-mentioned access rate is carried out data write to above-mentioned non-volatile apparatus time by temperature computation portion as variograph, temperature adaptation type control part is preserved and limit under the upward dangerous temperature of above-mentioned Nonvolatile memory devices use is that the 1st threshold temperature and the safe temperature lower than above-mentioned the 1st threshold temperature are the 2nd threshold temperature, and become in the temperature that the said temperature calculating part is calculated and to stop access when being higher than above-mentioned the 1st threshold temperature, the temperature of calculating at the said temperature calculating part becomes restarts access when being lower than above-mentioned the 2nd threshold temperature.

[0033] so also can: the temperature adaptation type control part of above-mentioned access rate control part is preserved expression and above-mentioned Nonvolatile memory devices and is used the 3rd threshold temperature of going up the state that dangerous temperature closes on, and becomes in the temperature that the said temperature calculating part detects and to carry out the access rate control that access rate is reduced when being higher than above-mentioned threshold temperature.

[0034] so also can: above-mentioned condition of work is the data volume when above-mentioned Nonvolatile memory devices is carried out access, above-mentioned access rate control part is based on above-mentioned data volume decision access rate, limit is the 1st threshold temperature under the upward dangerous temperature of above-mentioned Nonvolatile memory devices use so that above-mentioned Nonvolatile memory devices is no more than, and notify the data volume ecad access rate control part of above-mentioned access device with above-mentioned access rate, above-mentioned access device uses the access rate that is obtained by above-mentioned Nonvolatile memory devices that above-mentioned Nonvolatile memory devices is carried out access.

[0035] so also can: above-mentioned condition of work is the temperature of above-mentioned Nonvolatile memory devices, above-mentioned access rate control part has temperature preservation portion and temperature adaptation type control part, the temperature of the above-mentioned Nonvolatile memory devices that is provided by above-mentioned access device is provided in temperature preservation portion, temperature adaptation type control part is preserved and limit under the upward dangerous temperature of above-mentioned Nonvolatile memory devices use is that the 1st threshold temperature and the safe temperature lower than above-mentioned the 1st threshold temperature are the 2nd threshold temperature, the temperature of preserving in said temperature preservation portion becomes and stops access when being higher than above-mentioned the 1st threshold temperature, and the temperature of preserving in said temperature preservation portion becomes restarts access when being lower than above-mentioned the 2nd threshold temperature.

[0036] so also can: the temperature adaptation type control part of above-mentioned access rate control part is preserved expression and above-mentioned Nonvolatile memory devices and is used the 3rd threshold temperature of going up the state that dangerous temperature closes on, the temperature of preserving in said temperature preservation portion becomes when being higher than above-mentioned the 3rd threshold temperature, carries out the access rate control that access rate is reduced.

[0037] so also can: above-mentioned condition of work is the temperature of above-mentioned Nonvolatile memory devices, above-mentioned access rate control part has temperature computation portion and temperature adaptation type control part, environment temperature when the temperature of the above-mentioned Nonvolatile memory devices that temperature computation portion provides above-mentioned access device begins as access, and calculate the temperature of Nonvolatile memory devices based on this environment temperature and access time, temperature adaptation type control part is preserved and limit under the upward dangerous temperature of above-mentioned Nonvolatile memory devices use is that the 1st threshold temperature and the safe temperature lower than above-mentioned the 1st threshold temperature are the 2nd threshold temperature, the temperature of calculating at the said temperature calculating part becomes and stops access when being higher than above-mentioned the 1st threshold temperature, and the temperature of calculating at the said temperature calculating part becomes restarts access when being lower than above-mentioned the 2nd threshold temperature.

[0038] so also can: the temperature adaptation type control part of above-mentioned access rate control part is preserved expression and above-mentioned Nonvolatile memory devices and is used the 3rd threshold temperature of going up the state that dangerous temperature closes on, and becomes in the temperature that the said temperature calculating part is calculated and to carry out the access rate control that access rate is reduced when being higher than above-mentioned the 3rd threshold temperature.

[0039] so also can: above-mentioned access device has the temperature information efferent, read the temperature value that the temperature sensor in the above-mentioned access device detects, the sign that has temperature sensor with the above-mentioned access device of indication offers above-mentioned Nonvolatile memory devices as the temperature information in the above-mentioned access device.

[0040] so also can: the temperature that the said temperature information output part detects the temperature sensor in the above-mentioned access device with the temperature of the above-mentioned Nonvolatile memory devices of indication and environment temperature these two one of sign offer above-mentioned Nonvolatile memory devices.

[0041] in order to solve above-mentioned problem, Nonvolatile memory system of the present invention has access device and is connected with above-mentioned access device, carry out the Nonvolatile memory devices of reading and writing of data according to the access indication of above-mentioned access device, above-mentioned Nonvolatile memory devices has the nonvolatile memory of storage data and the Memory Controller that above-mentioned nonvolatile memory is read and write data, above-mentioned Memory Controller comprises register portion, preservation comprises the temperature rise speed of above-mentioned Nonvolatile memory devices, the temperature of above-mentioned Nonvolatile memory devices rises and the convergent temperature is the temperature parameter of saturation temperature, and this temperature parameter outputed to above-mentioned access device, above-mentioned access device has temperature detecting part and access rate control part, temperature detecting part detects the temperature of above-mentioned Nonvolatile memory devices, the temperature of the above-mentioned Nonvolatile memory devices that temperature parameter that the access rate control part is obtained with above-mentioned Nonvolatile memory devices and said temperature test section are measured, calculate the temperature variation of the above-mentioned Nonvolatile memory devices of following when carrying out data transmission by the set access rate of above-mentioned access device, change for said temperature, utilize the temperature of above-mentioned Nonvolatile memory devices be no more than above-mentioned Nonvolatile memory devices use go up under the dangerous temperature limit promptly the access rate of the 1st threshold temperature above-mentioned Nonvolatile memory devices is carried out access.

[0042] in order to solve above-mentioned problem, Nonvolatile memory system of the present invention has access device and is connected with above-mentioned access device, according to the Nonvolatile memory devices of reading and writing that carries out data from the access indication of above-mentioned access device, above-mentioned Nonvolatile memory devices has the nonvolatile memory of storage data and the Memory Controller that above-mentioned nonvolatile memory is read and write data according to the indication from above-mentioned access device, above-mentioned access device has the temperature detecting part of the temperature that detects above-mentioned Nonvolatile memory devices, and have temperature parameter preservation portion and an access rate control part, the preservation of temperature parameter preservation portion comprises the temperature rise speed of above-mentioned Nonvolatile memory devices and the temperature rising back convergent temperature of above-mentioned Nonvolatile memory devices is the temperature parameter of saturation temperature, the temperature of the above-mentioned Nonvolatile memory devices that temperature parameter that the access rate control part is preserved with above-mentioned temperature parameter preservation portion and said temperature test section are measured, calculate the temperature variation of the above-mentioned Nonvolatile memory devices of following when carrying out data transmission by the set access rate of above-mentioned access device, change for said temperature, utilize the temperature of above-mentioned Nonvolatile memory devices be no more than above-mentioned Nonvolatile memory devices use go up under the dangerous temperature limit promptly the access rate of the 1st threshold temperature above-mentioned Nonvolatile memory devices is carried out access.

[0043] so also can: the temperature parameter of above-mentioned register portion also comprises the temperature decline rate of the above-mentioned Nonvolatile memory devices when not carrying out access, the temperature of the above-mentioned Nonvolatile memory devices that above-mentioned access rate control part is measured with above-mentioned temperature information and said temperature test section, for the set access rate of above-mentioned access device, according to the temperature at above-mentioned Nonvolatile memory devices reach above-mentioned the 1st threshold temperature with regard to stopping data transmission the temperature of above-mentioned Nonvolatile memory devices drop to become the benchmark that restarts data transmission temperature promptly the 2nd threshold temperature just restart under the situation of data transmission, but the temperature variation of above-mentioned Nonvolatile memory devices decides the above-mentioned continuously access time, but and above-mentioned nonvolatile memory is carried out access based on the access time that is determined.

[0044] so also can: the clock frequency that writes or read that above-mentioned access rate control part carries out above-mentioned data by change is controlled access rate.

[0045] so also can: above-mentioned access rate control part for transmission regulation unit data during, by change during this period with during the interval control access rate.

[0046] so also can: above-mentioned access device also has the encoding and decoding portion in order to the packed data that generates dynamic image data, and above-mentioned access rate control part decides access rate by the data rate of the packed data that changes above-mentioned encoding and decoding portion and generate.

[0047] so also can: above-mentioned access rate control part decides access rate by the bit rate of the packed data that changes above-mentioned encoding and decoding portion and generate.

[0048] so also can: above-mentioned access rate control part decides access rate by the frame rate of the packed data that changes above-mentioned encoding and decoding portion and generate.

[0049] in order to solve above-mentioned problem, access device of the present invention is that above-mentioned Nonvolatile memory devices is write data and from the access device of above-mentioned Nonvolatile memory devices sense data, has demonstration about the display part of the information of above-mentioned access device with show control part by the status information of the state of the above-mentioned Nonvolatile memory devices of indication of above-mentioned Nonvolatile memory devices notice.

[0050] in order to solve above-mentioned problem, access device of the present invention is that above-mentioned Nonvolatile memory devices is write data and from the access device of above-mentioned Nonvolatile memory devices sense data, has the cooling end of the above-mentioned Nonvolatile memory devices of cooling and drives the control part of above-mentioned cooling end based on the status information by the state of the above-mentioned Nonvolatile memory devices of indication of above-mentioned Nonvolatile memory devices notice.

[0051] so also can: above-mentioned control part is preserved above-mentioned Nonvolatile memory devices and is used and go up i.e. i.e. the 2nd threshold temperature of the 1st threshold temperature and the safe temperature that is lower than above-mentioned the 1st threshold temperature of limit under the dangerous temperature, with the above-mentioned status information of above-mentioned Nonvolatile memory devices notice is the temperature and above-mentioned the 1st threshold temperature and the comparison of above-mentioned the 2nd threshold temperature of above-mentioned Nonvolatile memory devices, when this temperature is higher than above-mentioned the 1st threshold temperature, drive above-mentioned cooling end, when this temperature is lower than above-mentioned the 2nd threshold temperature, stop above-mentioned cooling end.

[0052] so also can: above-mentioned control part surpasses above-mentioned Nonvolatile memory devices and uses limit under the dangerous temperature promptly during the warning message of the state of the 1st threshold temperature being informed to indication, and above-mentioned cooling end is driven official hour.

[0053] so also can: above-mentioned control part is in the above-mentioned access rate control information that is informed to as status information, and above-mentioned access rate control information indication access rate reduced situation the time, above-mentioned cooling end is driven official hour.

[0054] so also can: above-mentioned control part is preserved the threshold time for the time of carrying out reading and writing data, and at the read-write permitted hours that is informed to as above-mentioned status information, and the read-write permitted hours of being notified than above-mentioned threshold time in short-term, and above-mentioned cooling end is driven official hour.

[0055] so also can: above-mentioned control part is preserved the threshold quantity for the data volume of read-write, and in the read-write permission amount that is informed to as above-mentioned status information, and the read-write permission amount of being notified drives official hour with above-mentioned cooling end during less than above-mentioned threshold quantity.

[0056] in order to solve above-mentioned problem, access device right and wrong volatile storage of the present invention connects, carry out the access device of reading and writing of above-mentioned Nonvolatile memory devices data, have temperature detecting part and access rate control part, temperature detecting part detects the temperature of above-mentioned Nonvolatile memory devices, the temperature of the above-mentioned Nonvolatile memory devices that temperature parameter that the access rate control part is obtained with above-mentioned Nonvolatile memory devices and said temperature test section are measured, calculate the temperature variation of the above-mentioned Nonvolatile memory devices of following when carrying out data transmission by the set access rate of above-mentioned access device, and with the temperature that changes the above-mentioned Nonvolatile memory devices in back through said temperature be no more than above-mentioned Nonvolatile memory devices use go up under the dangerous temperature limit promptly the access rate of the 1st threshold temperature above-mentioned Nonvolatile memory devices is carried out access.

[0057] in order to solve above-mentioned problem, access device right and wrong volatile storage of the present invention connects, above-mentioned Nonvolatile memory devices is carried out the access device of reading and writing of data, have the temperature detecting part of the temperature that detects above-mentioned Nonvolatile memory devices and preserve the temperature rise speed comprise above-mentioned Nonvolatile memory devices and the temperature of the above-mentioned Nonvolatile memory devices back convergent temperature that rises is the temperature parameter preservation portion of the temperature parameter of saturation temperature, and has an access rate control part, the temperature variation of the above-mentioned Nonvolatile memory devices of following when the temperature of the above-mentioned Nonvolatile memory devices that temperature parameter of preserving with above-mentioned temperature parameter preservation portion and said temperature test section are measured is calculated and carried out data transmission by the set access rate of above-mentioned access device, and be no more than above-mentioned Nonvolatile memory devices with the temperature that changes the above-mentioned Nonvolatile memory devices in back through said temperature and use that to go up limit under the dangerous temperature be that the access rate of the 1st threshold temperature is carried out access to above-mentioned Nonvolatile memory devices.

[0058] so also can: the temperature parameter that above-mentioned Nonvolatile memory devices is obtained also comprises the temperature decline rate of the above-mentioned Nonvolatile memory devices when not carrying out access, the temperature of the above-mentioned Nonvolatile memory devices that above-mentioned access rate control part is measured with above-mentioned temperature information and said temperature test section, for the set access rate of above-mentioned access device, according to the temperature at above-mentioned Nonvolatile memory devices reach above-mentioned the 1st threshold temperature with regard to stopping data transmission the temperature of above-mentioned Nonvolatile memory devices drop to become the benchmark that restarts data transmission temperature promptly the 2nd threshold temperature just restart under the situation of data transmission, but the temperature variation of above-mentioned Nonvolatile memory devices decides the above-mentioned continuously access time, but and above-mentioned nonvolatile memory is carried out access based on the access time that is determined.

[0059] so also can: the clock frequency that writes or read that above-mentioned access rate control part carries out above-mentioned data by change is controlled access rate.

[0060] so also can: above-mentioned access rate control part for transmission regulation unit data during, by change during this period with during the interval control access rate.

[0061] so also can: also have the encoding and decoding portion of the packed data that generates dynamic image data, above-mentioned access rate control part decides access rate by the data rate of the packed data that changes above-mentioned encoding and decoding portion and generate.

[0062] so also can: above-mentioned access rate control part decides access rate by the bit rate of the packed data that changes above-mentioned encoding and decoding portion and generate.

[0063] so also can: above-mentioned access rate control part decides access rate by the frame rate of the packed data that changes above-mentioned encoding and decoding portion and generate.

The invention effect

[0064] in Nonvolatile memory devices of the present invention and the Nonvolatile memory system, access rate control part in the Nonvolatile memory devices, perhaps control access rate based on the temperature of Nonvolatile memory devices or the total data amount of read-write, perhaps carry out the cooling of Nonvolatile memory devices, the temperature rise of the Nonvolatile memory devices when thereby inhibition is read and write nonvolatile memory, eliminate danger such as scald on the one hand, make the high-speed data read-write become possibility on the one hand for the user.

[0065] in the access device of the present invention, control by access rate, can suppress to follow the temperature rise of the Nonvolatile memory devices that the read-write of nonvolatile memory is taken place on the one hand and eliminate and make danger such as the user scalds, make the high-speed data read-write become possibility on the one hand.In addition, owing to conversion bit rate or frame rate when dynamic image writes down are controlled access rate, can prevent to stop because of heating makes record.

Description of drawings

[0066]

Fig. 1 is the block diagram of the Nonvolatile memory system in expression the present invention the 1st embodiment.

Fig. 2 is the memory mapped of impact damper 102.

Fig. 3 is the block diagram of expression nonvolatile memory 120.

Fig. 4 is the pie graph of the physical block of nonvolatile memory 120.

Fig. 5 is the sequential chart of the data write activity of expression access device 200A.

Fig. 6 represents the process flow diagram of the write activity of Memory Controller 110A.

Fig. 7 is the sequential chart when being illustrated in the zero access that under the situation of not controlling access rate nonvolatile memory 120 is write.

Fig. 8 is the curve map of the temperature variation of expression Nonvolatile memory devices 100A.

Fig. 9 is the sequential chart when being illustrated in the low speed access that under the situation of not controlling access rate nonvolatile memory 120 is write.

Figure 10 is illustrated in the sequential chart that under the situation of controlling access rate nonvolatile memory 120 is write.

Figure 11 is the curve map of the temperature variation of expression Nonvolatile memory devices 100A.

Figure 12 is the block diagram of the Nonvolatile memory system in expression the present invention the 2nd embodiment.

Figure 13 is the sequential chart of the data write activity of expression access device 200B.

Figure 14 is the process flow diagram of the write activity of expression Memory Controller 110B.

Figure 15 is the block diagram of the Nonvolatile memory system in expression the present invention the 3rd embodiment.

Figure 16 is the block diagram of the Nonvolatile memory system in expression the present invention the 4th embodiment.

Figure 17 is the sequential chart of the data write activity of expression access device 200D.

Figure 18 is the process flow diagram of the write activity of expression Memory Controller 110D.

Figure 19 is the block diagram of the Nonvolatile memory system in expression the present invention the 5th embodiment.

Figure 20 is the curve map of the temperature variation of expression Nonvolatile memory devices.

Figure 21 is the block diagram of the Nonvolatile memory system in expression the present invention the 6th embodiment.

The curve map of the temperature variation when Figure 22 is the access rate control of expression Nonvolatile memory devices 200E.

Figure 23 is the curve map of the temperature variation of expression Nonvolatile memory devices 200E.

The curve map of the temperature variation when Figure 24 is the access rate control of expression Nonvolatile memory devices 200E.

Figure 25 is the block diagram of the Nonvolatile memory system in expression the present invention the 7th embodiment.

Figure 26 A is the pie graph of the temperature information in the present invention's the 7th embodiment.

Figure 26 B is the pie graph of the temperature information in the present invention's the 7th embodiment.

Figure 27 represents the sign state in the present invention's the 7th embodiment.

Figure 28 is the block diagram of the Nonvolatile memory system of expression the present invention the 8th embodiment.

Figure 29 is the figure of the temperature parameter of expression Nonvolatile memory devices 100H preservation.

Figure 30 is the sequential chart of the access rate control of expression access device 200H.

Figure 31 is the sequential chart of the access rate control of expression access device 200H.

Figure 32 is the sequential chart of the temperature variation of expression Nonvolatile memory devices 100H.

Figure 33 is the process flow diagram of expression access device 200H to the access action of Nonvolatile memory devices 100H.

Figure 34 is the block diagram of the Nonvolatile memory system of expression the present invention the 9th embodiment.

Figure 35 is the process flow diagram of expression access device 200I to the access action of Nonvolatile memory devices 100I.

Figure 36 is the sequential chart of the temperature variation of expression Nonvolatile memory devices 100I.

Figure 37 is the block diagram of the Nonvolatile memory devices of expression the present invention the 10th embodiment.

Figure 38 A is the figure of the set dynamic image logging mode of expression encoding and decoding portion 217.

Figure 38 B is the figure of the set dynamic image logging mode of expression encoding and decoding portion 217.

Description of reference numerals

[0067]

100A, 100B, 100C, 100D, 100E, 100F, 100G, 100H Nonvolatile memory devices

110A, 110B, 110C, 110D, 110E, 110F, 110G, 110H Memory Controller

101 main interfaces

102 impact dampers

103 read-write control parts

104 CPU

105 address administration portions

106A, 106B, 106C, 106E, 106F, 106G, 117 access rate control parts

111,117 temperature detecting parts

112 temperature adaptation type control parts

113 status information generating units

114,116 temperature computation portions

115 temperature preservation portions

120 nonvolatile memories

130 mode conversion switch

200A, 200B, 200D, 200E, 200F, 200G, 200H, 200I, 200J access device

201 display parts

202,203,205,209 control parts

204 cooling ends

206 temperature efferents

207A, 207B environment temperature efferent

208 temperature information efferents

211 systems control divisions

212,217 encoding and decoding portions

213 ROM and RAM

214 display parts

215 display control units

216H, 216I, 216J Nonvolatile memory devices control part

221 storage access portions

222 temperature detecting parts

223,225 access rate control parts

224 temperature parameter preservation portions

300～315 flash memories

320～323 memory buss

Embodiment

[0068] (the 1st embodiment)

Fig. 1 is the block diagram of the Nonvolatile memory system in expression the present invention the 1st embodiment.As shown in Figure 1, the Nonvolatile memory system of present embodiment comprises Nonvolatile memory devices 100A and the access device 200A of Nonvolatile memory devices 100A is housed and constitutes.

[0069] at first, access device 200A comprises in order to show display part 201 and the control part 202 about the information of Nonvolatile memory system.Control part 202 is carried out control, Nonvolatile memory devices 100A is carried out access and write or sense data, shows the necessary information from the information that Nonvolatile memory devices 100A receives simultaneously on display part 201.

[0070] then, 100A describes with regard to Nonvolatile memory devices.As shown in Figure 1, Nonvolatile memory devices 100A comprise Memory Controller 110A, as flash memory group's nonvolatile memory 120 and mode conversion switch 130.As described later, mode conversion switch 130 is converter sections of changing between access rate control model and non-access rate control model.

[0071] Memory Controller 110A comprises main interface (main IF) 101, impact damper 102, read-write control part 103, CPU104, address administration portion 105 and the access rate control part 106A that communicates with access device 200A.

[0072] RAM of 16k byte capacity constitutes impact damper 102 by for example having, and temporarily preserves from the data of access device 200A or the data of reading from nonvolatile memory 120.Fig. 2 is the memory mapped of this impact damper 102 of expression.Impact damper 102 is made of area 0～8 zones such as 7 grades, and each zone has the capacity of 2k byte.Write pointer WP indication is from the writing position of the data of access device 200A transmission.Read-out position when in addition, read pointer RP indication is from impact damper 102 sense datas.

[0073] read-write control part 103 is based on the physical address of address administration portion 105 appointments, with the temporary transient data write non-volatile memory of preserving 120 in the impact damper 102.Read and write control part 103 also from nonvolatile memory 120 sense datas, and these data are temporarily preserved in impact damper 102.

[0074] CPU104 inside comprises the RAM of program usefulness ROM and operation usefulness etc., controls whole Memory Controller 110A.

[0075] address administration portion 105 is physical addresss that the logical address that will follow the access of access device 200A and transmit is transformed into nonvolatile memory 120, the module that recording status of nonvolatile memory 120 etc. is managed.Have, address management method is realized with general technology, so its explanation is omitted again.

[0076] access rate control part 106A comprises temperature detecting part 111 and temperature adaptation type control part 112.Temperature detecting part 111 comprises the temperature sensor of thermistor etc., is used for detecting the temperature (hereinafter referred to as temperature T) of Nonvolatile memory devices 100A.

Among the ROM of temperature adaptation type control part 112 inside of [0077] temperature adaptation type etc., store the 1st, the 2nd threshold temperature.The 1st threshold temperature is that the indication Nonvolatile memory devices uses the ultimate temperature of limitting under the temperature that danger such as scald are arranged (hereinafter referred to as ultimate temperature Trisk).The 2nd threshold temperature is to be judged as lower than the 1st threshold temperature, as not have scald dangerous abundant safe safe temperature (hereinafter referred to as safe temperature Tsafe).Temperature adaptation type control part 112 is with the arbitrary pattern work in access rate control model or the non-access rate control model.So-called access rate control model is the temperature T and ultimate temperature Trisk or safe temperature Tsafe comparison with temperature sensor measurement, and result's pattern of carrying out the interruption of reading and writing data or the change of access rate etc. based on the comparison.So-called non-access rate control model is irrespectively to write data by the access rate of access device 200A with temperature T, does not carry out the pattern of the interruption of reading and writing data or the change of access rate etc.

[0078] then, describes with regard to nonvolatile memory 120.Fig. 3 is the block diagram of the nonvolatile memory 120 of expression Nonvolatile memory devices 100A.Nonvolatile memory 120 includes 16 flash memories (FM) 300～315, is connected with read-write control part 103 with memory bus 320～323.

[0079] Fig. 4 is the pie graph of the physical block that comprised of each flash memory 300～315.1 flash memory comprises a plurality of physical blocks, and 1 physical block has the page of 128 conduct units of writing.Each page has the data field of 2048 bytes and the directorial area of 64 bytes.The data that the data area stores access device 200A of physical block transmits, in the directorial area of the most preceding page shown in the oblique line, logical block number and physical management information that the logical address that record transmits based on access device 200A is generated by address administration portion 105.

[0080] describes with regard to writing to the data of Nonvolatile memory devices 100A from access device 200A in the Nonvolatile memory system of this structure by the time sequence.The sequential chart that the data of access device 200A sent and receive when Fig. 5 was expression data write activity.Access device 200A at first sends Nonvolatile memory devices 100A and writes instruction.Then, access device 200A is a unit with 16k byte (bunch unit), successively Nonvolatile memory devices 100A is transmitted data.But during the busy information that receives from Nonvolatile memory devices 100A, access device 200A interrupts the transmission of data.If in the end of transmission (EOT) through file data after such processing, access device 200A just sends the end of transmission (EOT) instruction to Nonvolatile memory devices 100A.

[0081] then, the flow process that writes with regard to the data under non-access rate control model and the access rate control model describes respectively.Have again, for simplicity's sake, only write in the present embodiment and describe the explanation that omission is read for data with regard to data.Fig. 6 is the process flow diagram that data that expression Memory Controller 110A carries out write control.In addition, for simplicity's sake, omitted the explanation of not having the detail operations etc. of stored system information and address administration portion 105 in content that the content of direct relation and general technology just can realize, for example nonvolatile memory 120 with the present invention.Have, during data write, access device 200A was that unit writes data continuously from logical address 0 beginning with the 16k byte again.

[0082] [the data write activity in the non-access rate control model]

At first, the processing that writes with regard to data in the non-access rate control model of not carrying out access rate control describes.Among Fig. 6, the initialization action during power connection is identical with traditional Memory Controller.At first, the logical block number and the physical management information that write down in the directorial area based on each physical block of flash memory 300～315, address administration portion 105 constitutes (S100) such as logical map tables in address administration portion 105.In the data of the following access device 200A that carries out write, Memory Controller 110A was with definite physical addresss such as this logical map tables.Then, Memory Controller 110A writes flash memory 300～315 with temporary transient data of preserving in the impact damper 102 via read-write control part 103.

[0083] after the initialization process among the S100, Memory Controller 110A waits for that the indication from access device 200A writes writes instruction (S101).In a single day Memory Controller 110A receives from access device 200A and writes instruction, and CPU104 just will hand to address administration portion 105 as the logical address that the independent variable that writes instruction (argument) transmits.Address administration portion 105 determines physical block based on this logical address.And CPU104 will temporarily be kept at (S102) the impact damper 102 from area 0 by ascending order at the data based write pointer WP that writes the transmission of instruction back.

[0084] in the moment of the data of preservation 2k byte in impact damper 102, read-write control part 103 is read the temporary transient data based read pointer RP that preserves in the impact damper 102 from impact damper 102, and write non-volatile memory 120 (S103).Carry out the processing of such S102 and S103 repeatedly, transmitted the data (S104) of 16k byte until access device 200A.Have, data transmission and the timing that writes and the temperature rise of nonvolatile memory 120 about the access device 200A, impact damper 102 and the nonvolatile memory 120 that carry out among S102 and the S103 will be described later again.

[0085] behind the S104, CPU104 is according to the state of mode conversion switch 130, and differentiation is that the access rate control model also is a non-access rate control model (S105).If Shuo Ming non-access rate control model is here then handled and is changed S109 over to.

[0086] then, CPU104 differentiates whether receive end of transmission (EOT) instruction (S109) from access device 200A.If receive the end of transmission (EOT) instruction, just change step S101 over to, wait for next instruction.On the other hand,, just change step S102 over to, proceed of the write processing of the data of temporary transient preservation in the impact damper 102 nonvolatile memory 120 if do not receive the end of transmission (EOT) instruction.It more than is the explanation that writes processing about the data of non-access rate control model.

[0087] below, the temperature rise of data transmission among S102 and the S103 and the timing that writes and nonvolatile memory 120 is described.Fig. 7 is illustrated in not carry out the sequential chart that access rate when control writes the data of nonvolatile memory 120 under the situation of carrying out zero access.Fig. 7 shows from the data of access device 200A by the time sequence table and transmits, reads and the data of each flash memory 300～315 are write from the data of impact damper 102.Since 0 numbering of adding, be that unit is attached on the data of access device 200A transmission among this figure with the 2k byte.Below, the data of for example establishing additional numbers 0 are data 0.In addition, 8 units, for example from data 0 to data 7, the data of expression 16k byte.

[0088] at first, transfer data to impact damper 102 from data 0 successively from access device 200A.Transmission one to the data 0 of impact damper 102 finishes, and access device 200A just begins the transmission of data 1, and still, read and write control part 103 and begun from impact damper 102 sense datas 0 this moment.In other words, Fig. 7 illustrates data 1 and carries out from reading simultaneously of impact damper 102 to the transmission and the data 0 of impact damper 102 from access device 200A.And as shown in Figure 7, read-write control part 103 will send flash memory 300 to from the data 0 that impact damper 102 is read, and send data 1 to flash memory 301.Like this, write data and just be transferred to flash memory 300～315 successively from data 0 beginning.

[0089] in the time series that write of expression to flash memory 300～315, do not add Pt (about 67 μ S) expression read-write control part 103 between the transmission period of oblique line via memory bus will write data send to I/O register (not shown) in the nonvolatile memory 120 during.In addition, be added with oblique line write data that period P p (about 200 μ S) expression flash memory will send the I/O register to write physical block the page during.At this moment, as shown in Figure 7, every 2k byte writes data to flash memory 315 from flash memory 300 successively, repeats circulation and writes.And Fig. 7 represents that whole flash memories 300～315 ceaselessly carry out data continuously and write.

[0090] like this if, obtains access rate by following formula (1) and is about 120M byte/S from the data of access device 200A with 67 μ S transmission 8k byte.

[0091] temperature rise of explanation Nonvolatile memory devices 100A under such state now.Major part in the power consumption of Nonvolatile memory devices 100A is Pt and write the power that consumes among the period P p between to the transmission period of the write activity of flash memory 300～315.As shown in Figure 7, under the situation that 16 flash memories 300～315 are stably worked simultaneously, if the supply voltage of flash memory 300～315 is 3.3V, the current sinking of Pt and Pp is 10mA, and then the stable power consumption Q of Nonvolatile memory devices 100A is obtained by following formula (2) and is about 528mW.

3.3V×10mA×16＝528mW...(2)

Have, usually therefore the power consumption of the Memory Controller 110A that realizes with integrated circuit is ignored for the sake of simplicity fully less than the power consumption of flash memory 300～315 again.

[0092] in the writing of nonvolatile memory 300～315, the average temperature rising Δ T of Nonvolatile memory devices 100A, the available formula that draws from " the miniaturized high-speed To of Electricity Machine device is to ying Hot countermeasure と Hot シ ミ ユ レ one シ ヨ ン Ji Intraoperative (1991) author: Shi Peng Wins ほ か " (miniaturization of reply electronic equipment, hot countermeasure and thermal simulation technology of high speed) is that formula (3) is obtained approx.In the formula, the power consumption number 0.528W of Q for obtaining with formula (2).S represents the surface area of Nonvolatile memory devices 100A.

ΔT＝{Q/(1.78×S)} ^0.8...(3)

Here, if Nonvolatile memory devices 100A is the SD storage card, then its surface area S is obtained by following formula.

$+(0.024\×.0021)\}\×2$

$=1.77\&times;{10}^{-3}{\mathrm{<figure-callout\; id="2"\; label="m"\; filenames="A20088000186700661.png,A20088000186700691.png"\; state="\{\{state\}\}">m</figure-callout>}}^2$

If adopt this value S, then obtaining Δ T by (3) is about 60 ℃.

[0093] here as can be known, suppose that the temperature (below, be called environment temperature TE) around the Nonvolatile memory devices 100A is 25 ℃, the temperature T of Nonvolatile memory devices 100A is environment temperature TE and temperature rise Δ T sum, that is temperature rises to T=85 ℃.Have, be loaded under the inner situation about using of access device 200A at Nonvolatile memory devices 100A, environment temperature TE becomes the Nonvolatile memory devices 100A temperature on every side in the access device 200A, and therefore, environment temperature TE may not be 25 ℃.That is, environment temperature TE is different because of the kind of access device 200A, the quality standard when adopting Nonvolatile memory devices 100A to make here.

[0094] here, Fig. 8 is the curve map of the temperature variation of expression Nonvolatile memory devices 100A, during with above-mentioned zero access to write the time response of handling corresponding temperature T be the curve map shown in the solid line A among Fig. 8.The temperature T that writes the zero hour is promptly 25 ℃ of environment temperature TE.Then, writing of temperature T factor certificate and little by little add the saturation temperature of the temperature rise Δ T that formula (3) calculates near environment temperature TE is 85 ℃ here.The time that temperature rises to about 63% ratio of saturation temperature is thermal time constant because of the access method of Nonvolatile memory devices 100A, material etc. have nothing in common with each other, but if for example certain storage card is write data continuously, then probably is about 2～3 minutes.

[0095] then, the situation when low speed access being described with Fig. 9.Fig. 9 represents not carry out under the situation of access rate control the sequential chart that the data to nonvolatile memory 120 write, the situation when low speed access is carried out in expression.

[0096] among Fig. 9, half the about 60M byte/S the when access rate of the data that access device 200A transmits is made as zero access.Compare during with zero access, be approximately its half from access device 200A transmission and from the speed that impact damper 102 is read among Fig. 9.But, Pt between the transmission period of the data in flash memory 300 0 for example, the identical 67 μ S that are about during with zero access are about 200 μ S during the writing of data 0.Situation shown in Figure 9 is, access rate is set as a half like this, write in each flash memory 300～315 between stand-down with write during roughly the same ratio take place.Have, what is called write between stand-down again, was the transmission of data and write the time of all not carrying out.Power consumption during with zero access is compared, and the power consumption number Q of nonvolatile memory 120 is 264mW, becomes half approximately.Suppose that Nonvolatile memory devices is the SD card, its temperature rise Δ T is about 35 ℃ shown in the following formula (4).

As can be known, if increase 25 ℃ of environment temperature TE on above-mentioned temperature rise Δ T, saturation temperature T just becomes 60 ℃.

[0097] here, suppose that ultimate temperature Trisk is 60 ℃, the time response of handling corresponding temperature T that writes during with low speed access becomes the curve shown in the dotted line B among Fig. 8.Temperature T when writing beginning is 25 ℃ of environment temperature TE, and then, temperature T is owing to move closer to promptly 60 ℃ of saturation temperatures because of writing processing consumption electric power.According to as can be known above-mentioned, even write data constantly during low speed access, the temperature T risk that also can not overstep the extreme limit, the result has eliminated the danger of scalding.

[0098] have again, for the ease of diagram, among Fig. 7 during access device 200A and the impact damper 102 transmission 8k byte datas and period P t be expressed as the roughly the same time, but needn't one during these be decided to be the identical time.Similarly, among Fig. 9 during access device 200A and the impact damper 102 transmission 4k byte datas and period P t be expressed as the roughly the same time, but also needn't one during these be decided to be the identical time.

[0099] in addition, access device 200A can be arranged to select zero access and low speed access.For example, can determine that the high-speed and continuous screening-mode etc. with digital camera is made as zero access, common screening-mode is made as low speed access.

[0100] [the data write activity in the access rate control model]

Then, with Fig. 6 data write activity in the access rate control model is described.Have, the S100～S104 among Fig. 6 is identical with data write activity in the above-mentioned non-access rate control model, so its explanation is omitted again.

[0101] after the S104, CPU104 judges access rate control model selected (S105) according to the state of mode conversion switch 130.Then, temperature adaptation type control part 112 compares (S106) with temperature T and the ultimate temperature Trisk of the Nonvolatile memory devices 100A that temperature detecting part 111 is measured.

[0102] in S106, as it is bigger than ultimate temperature Trisk to be judged as temperature T, and then temperature adaptation type control part 112 makes the data of read-write control part 103 write interruption, and access device 200A is sent busy information (S107).Temperature adaptation type control part 112 sends busy information on one side, whether is lower than safe temperature Tsafe (S108) Yi Bian judge temperature T.In S108, be lower than safe temperature Tsafe and then turn back to step S107 as being judged as temperature T, therefore send busy information, be lower than safe temperature Tsafe up to temperature T in S108.

[0103] in S108, as be judged as temperature T and be lower than safe temperature Tsafe, CPU104 just differentiates Memory Controller 110A and whether receives end of transmission (EOT) instruction (S109) from access device 200A.If receive the end of transmission (EOT) instruction, then change step S101 over to, wait for next read-write indication.On the other hand,, then change step S102 over to, continue temporary transient data of preserving in the impact damper 102 are write to nonvolatile memory 120 if do not receive the end of transmission (EOT) instruction.

[0104] then, the temperature rise of the Nonvolatile memory devices 100A in the access rate control model is described with Figure 10 and Figure 11.Figure 10 is the sequential chart that the data when representing above-mentioned access rate control model high speed access write.Among Figure 10, interrupt data transmission at moment tr, ts restarts data transmission in the moment.In addition, Figure 11 is expression and the curve map of the time response that writes the corresponding temperature T of processing of Figure 10.Among Figure 11, the temperature T that writes the t0 zero hour equals promptly 25 ℃ of environment temperature TE, and then, temperature T is owing to factor moves closer in promptly 85 ℃ of saturation temperatures according to writing the electric power that consumes.But at the overstep the extreme limit moment tr of temperature T risk of temperature T, by the processing of the S107 among Fig. 6, the data of the data transmission of access device 200A and read-write control part 130 write and are interrupted, so temperature T begins to reduce.Be lower than the moment ts of safe temperature Tsafe in temperature T, the data transmission of access device 200A and writing of control part 130 of read-write are restarted, and temperature T restarts to rise.

[0105] as above, Nonvolatile memory system shown in the present embodiment, when the temperature T of the Nonvolatile memory devices 100A that measures at temperature detecting part 111 oversteps the extreme limit temperature T risk, temperature adaptation type control part 112 interrupts the write activity of read-write control part 103, simultaneously busy information is sent to access device 200A and the data transmission of access device 200A is interrupted.And, become in temperature T and to restart that data write and data transmission when being lower than safe temperature Tsafe.Thereby, can control access rate, even in high-speed data writes, also can avoid the user being scalded because of the temperature rise of Nonvolatile memory devices 100A.

[0106] have, temperature adaptation type control part 112 also can be preserved the data as the ultimate temperature Trisk2 lower than ultimate temperature Trisk of the 3rd threshold temperature again.This temperature T risk2 is indication and Nonvolatile memory devices use to be gone up the temperature of the state that dangerous temperature closes on, and is made as the temperature higher than safe temperature Tsafe.Temperature adaptation type control part 112 will be read and write control part 103 when temperature T surpasses this ultimate temperature Trisk2 data write from zero access and are transformed into low speed access.Meanwhile, temperature adaptation type control part 112 can send indication to the low speed access conversion to access device 200A, converts the data transmission of access device 200A to low speed access from zero access.In addition, when temperature T is lower than ultimate temperature Trisk2, data are write from low speed access and be transformed into fast high access.Then, temperature adaptation type control part 112 sends the indication be transformed into zero access to access device 200A, and the data transmission of access device 200A is transformed into zero access from low speed access.

[0107] has again, write with regard to data in the present embodiment and describe, but in reading action, also can carry out access rate control by the processing identical with above explanation.Have, the quality standard decision during ultimate temperature Trisk and safe temperature Tsafe are made by Nonvolatile memory devices 100A can be arranged to various values again.In addition, temperature detecting part 111 is arranged on the outside of Memory Controller 110A, also can obtains the effect identical with above-mentioned present embodiment.

[0108] (the 2nd embodiment)

Figure 12 is the block diagram of the Nonvolatile memory system in expression the present invention the 2nd embodiment.The Nonvolatile memory system of present embodiment comprises Nonvolatile memory devices 100B and constitutes with the access device 200B of Nonvolatile memory devices 100B is housed as shown in figure 12.

[0109] the Memory Controller 110B of Nonvolatile memory devices 100B includes access rate control part 106B.And access rate control part 106B includes status information generating unit 113.Except status information generating unit 113, present embodiment is identical with the 1st embodiment, adopts the Reference numeral identical with the 1st embodiment to represent.

[0110] on the other hand, access device 200B also has control part 203 and cooling end 204 outside display part 201.The status information that control part 203 provides based on Nonvolatile memory devices 100B is controlled the access to Nonvolatile memory devices 100B, drives cooling end 204 simultaneously.Cooling end 204 is electric cooling ends such as air cooling device such as fan or Peltier element etc. for example, and 100B cools off to Nonvolatile memory devices.

[0111] then, describes with regard to the status information generating unit 113 in the access rate control part 106B of Nonvolatile memory devices 100B.Status information generating unit 113 generates the status information of the state of expression Nonvolatile memory devices, and the information that generates is sent to access device 200B.Status information is meant temperature T, warning message, access rate control implementation information, read-write permitted hours tx, read-write permission amount Sx etc., hereinafter will describe in detail.The inside of status information generating unit 113 has ROM and the arithmetical unit that comprises the program of carrying out formula described later (5-1)～formula (5-4), is used for calculating read-write permitted hours tx.The inside of status information generating unit 113 has and formula (5-1)～corresponding table of formula (5-4), also can be by obtain read-write permitted hours tx with reference to this table.The inside of status information generating unit 113 also has ROM and the arithmetical unit that comprises the program of carrying out formula described later (6-1) and formula (6-2), can be used to calculate read-write permission amount Sx.The inside of status information generating unit 113 has and formula (6-1) and the corresponding table of formula (6-2), also can be by obtain read-write permission amount Sx with reference to this table.

[0112] then, describes with regard to status information.Temperature T in the status information is the temperature of the Nonvolatile memory devices 100B that measures of temperature detecting part 111.

[0113] warning message constitutes with the sign of for example 1 bit.Whether the temperature T of this sign expression Nonvolatile memory devices 100B becomes the high temperature that is higher than ultimate temperature Trisk.

[0114] access rate control implementation information constitutes with the sign of for example 1 bit.Whether this sign expression temperature adaptation type control part 112 is current in the control of execution access rate.

[0115] read-write permitted hours tx is until the reach capacity reading and writing data permitted hours of temperature T risk of temperature T.Read-write permitted hours tx is by following various (5-1)～(5-4) obtain.In the formula, T is the temperature of Nonvolatile memory devices 100B, and Rw writes fashionable access rate, and Rr is the access rate when reading, and t is the time of carrying out access.TE is the environment temperature of Nonvolatile memory devices 100B, is located at 25 ℃ for fixed value in the present embodiment.

Write fashionable

T＝Fw(Rw，t)+TE...(5-1)

tx＝Gw(Rw，T，Trisk)...(5-2)

When reading

T＝Fr(Rr，t)+TE...(5-3)

tx＝Gr(Rr，T，Trisk)...(5-4)

Have, access rate Rw and Rr are with counter etc. the write pointer WP of impact damper 102 or the time increment counting of read pointer RP again, and obtain divided by the 2k byte with this count value (time).Fw and Fr are to be variable with access rate Rw or Rr and time t, obtain the function of the average temperature rising Δ T of Nonvolatile memory devices 100B uniquely.These functions can form the integral characteristic shown in Figure 8 of the 1st embodiment by temperature experiment or the approximate formula derivation of simulation conduct when non-volatile memories is handled the 110B manufacturing.Gw and Gr promptly read and write the function of permitted hours tx in order to obtain reach capacity time of temperature T risk of temperature T uniquely, can obtain based on Fw and Fr respectively.

[0116] read-write permission amount Sx is reach capacity a reading and writing data permission amount till the temperature T risk of temperature T.Read-write permission amount Sx obtains by following formula (6-1) and formula (6-2).In the formula, tx is the read-write permitted hours of obtaining with formula (5-2) or formula (5-4).

Write fashionable

Sx＝tx×Rw...(6-1)

When reading

Sx＝tx×Rr...(6-2)

[0117] below, writes to the data of Nonvolatile memory devices 100B from access device 200B in the Nonvolatile memory system that just as above constitutes by the time sequence and describe.The sequential chart that the data of access device 200B sent and receive when Figure 13 was expression data write activity.Access device 200B at first sends to Nonvolatile memory devices 100B and writes instruction.Then, access device 200B receives the status information ST from Nonvolatile memory devices 100B.The access device 200B that receives status information transmits the data of 16k byte (bunch unit) to Nonvolatile memory devices 100B.The transmission one of data finishes, and just receives the status information from Nonvolatile memory devices 100B.So, access device 200B alternatively carries out the transmission of 16kB data and the reception of status information, sends file data to Nonvolatile memory devices 100B.Access device 200B interrupts the transmission of data during receiving from the busy information of Nonvolatile memory devices 100B.Through such processing, the transmission one of file data finishes, and access device 200B just sends the end of transmission (EOT) instruction to Nonvolatile memory devices 100B.

[0118] then, the flow process that data write is described.The non-access rate control model of the step S100 of Figure 14～S109 and the action of access rate control model are identical with the 1st embodiment, and it illustrates omission.Below, the step S120 that increases newly with regard to this figure describes.

[0119] behind the step S104 of Figure 14, status information generating unit 113 arrives access device 200B (S120) with this state information notification after generating status information.The control part 203 of access device 200B makes display part 201 show the status information of being notified, and in addition, makes cooling end 204 according to status information work, and 100B cools off to Nonvolatile memory devices.Below should handle and elaborate.

When [0120] at least 1 in the above-mentioned status information was informed to access device 200B, access device 200B carried out the action shown in following (1)～(5) based on notified status information.

[0121] (1) status information generating unit 113 arrives access device 200B with temperature T as state information notification, and the control part 203 of access device makes display part 201 displays temperature T.Control part 203 portion within it has the ROM that has stored ultimate temperature Trisk and Tsafe.

Then, temperature T and temperature T risk and the Tsafe that is notified compared, when this temperature is higher than Trisk, drive cooling end, stop cooling end when being lower than Tsafe.

[0122] (2) status information generating unit 113 arrives access device 200B, the control part 203 of access device warning on display part 201 with warning message as state information notification.In addition, control part 203 drives certain hour with cooling end 204 after receiving warning message.

[0123] (3) status information generating unit 113 is controlled implementation information with access rate and is arrived access device 200B, the enforcement state of the control part 203 of access device display access rate controlled on display part 201 as state information notification.In addition, control part 203 when reducing, drives certain hour with cooling end 204 in current access rate after receiving access rate control implementation information.

[0124] (4) status information generating unit 113 generates read-write permitted hours tx as status information, and notice access device 200B.At this moment, the control part 203 of access device will be read and write permitted hours tx and show on display part 201.In addition, control part 203 has the ROM that has the time (threshold time) that becomes threshold value in advance, therefore, read-write permitted hours tx than this time that becomes threshold value in short-term, just with cooling end 204 driving certain hours.For example, when the read-write permitted hours tx that is then given becomes below 1 minute, just drive cooling end 204 in each 1 bunch data transmission if threshold time was made as 1 minute.This threshold time is to surpass Trisk and allow access device 200B begin to drive the time of cooling end 204 for the temperature that does not make Nonvolatile memory devices 100B.

[0125] (5) status information generating unit 113 generates read-write permission amount Sx as status information, and notice access device 200B.At this moment, the control part 203 of access device will be read and write permission amount Sx and show on display part 201.In addition, control part 203 has the ROM of the data volume (threshold quantity) that has in advance as threshold value, and therefore, read-write permission amount Sx just drives cooling end 204 certain hours than the data volume that becomes this threshold value hour.For example if threshold quantity is made as 32kB, the read-write permitted hours Sx that is then given in each 1 bunch data transmission becomes 32kB when following, just drives cooling end 204.This threshold quantity is to allow access device 200B begin to cool down the driving of portion 204 for the temperature that makes Nonvolatile memory devices 100B is no more than Trisk and the data volume of establishing.

[0126] use each status information as described above, but status information generating unit 113 can generate a kind in above-mentioned 5 kinds of status informations and notify access device 200B, also can generate various states information and notify access device 200B.As for showing which kind of status information at display part 201, which kind of status information perhaps to determine the driving of cooling end 204 according to, depend on design or the setting of access device 200B, various changes can be arranged.

[0127] (the 3rd embodiment)

Figure 15 is the block diagram of the Nonvolatile memory system in expression the present invention the 3rd embodiment.The Nonvolatile memory system of present embodiment comprises Nonvolatile memory devices 100C and access device 200A and constitutes.Include temperature computation portion 114 among the access rate control part 106C of the Memory Controller 110C of Nonvolatile memory devices 100C.Temperature computation portion 114 is not the sensor that adopts thermistor etc., but by obtain the temperature T of Nonvolatile memory devices 100C based on the approximate treatment of formula that illustrates in the 2nd embodiment (5-1) and formula (5-3).Except temperature computation portion 114, access device 200A in the present embodiment and Nonvolatile memory devices 100C are identical with the 1st embodiment, adopt the Reference numeral identical with the 1st embodiment.Have, in this approximate treatment, the environment temperature TE when access is begun is made as fixed value again, for example 25 ℃.

[0128] in the Nonvolatile memory system in the present embodiment, the temperature detecting part 111 of the 1st embodiment is replaced as temperature computation portion 114.Thereby, can be enough the temperature T calculated of temperature computation portion 114 carry out with the 1st embodiment in the same action of Nonvolatile memory system that illustrates.

[0129] in the present embodiment, temperature adaptation type control part 112 also can be preserved the data as the ultimate temperature Trisk2 lower than ultimate temperature Trisk of the 3rd threshold temperature.This temperature T risk2 is indication and Nonvolatile memory devices use to be gone up the temperature of the state that dangerous temperature closes on, and is made as the temperature higher than safe temperature Tsafe.Temperature adaptation type control part 112 will be read and write control part 103 when temperature T surpasses this ultimate temperature Trisk2 data write from zero access and are transformed into low speed access.Meanwhile, temperature adaptation type control part 112 can send the indication of changing to low speed access to access device 200A, makes the data transmission of access device 200A be transformed into low speed access from zero access.

[0130] in the present embodiment, temperature computation portion 114 obtains temperature T by approximate treatment, does not need to install the temperature sensor of thermistor etc. among the Nonvolatile memory devices 100C.Therefore, on the miniaturization of Nonvolatile memory devices 100C or cost, has advantage.

[0131] (the 4th embodiment)

Figure 16 is the block diagram of the Nonvolatile memory system in expression the present invention the 4th embodiment.The Nonvolatile memory system of present embodiment comprises Nonvolatile memory devices 100D and access device 200D and constitutes.The Memory Controller 110D of Nonvolatile memory devices 100D includes the epharmonic access rate control part 107 of data volume.Access device 200D comprises display part 201 and control part 205 and constitutes.

[0132] in the Nonvolatile memory system of present embodiment, only access rate control part 107 is different with the Nonvolatile memory system of the 1st embodiment with control part 205.Except these control parts, other are identical with the 1st embodiment, adopt the Reference numeral identical with the 1st embodiment.

Nonvolatile memory devices 100D was no more than the access rate of the 1st threshold temperature Trisk when [0133] access rate control part 107 calculated access based on access device 200D data designated amount, and notified access device 200D with the access rate of calculating as access rate information (AR).

[0134] control part 205 controls of access device 200D comprise the access device 200D of display part 201.And control part 205 sends data quantity transmitted to Nonvolatile memory devices 100D, and receives the access rate of data transmission from Nonvolatile memory devices 100D.Then, access device 200D presses 16k byte (bunch unit) transfer files data according to this access rate access Nonvolatile memory devices 100D.

[0135] Nonvolatile memory system in the present embodiment of said structure is described.In addition, in the present embodiment, only describe for the sake of simplicity, omit for the explanation of reading action with regard to the data write activity.

[0136] Figure 17 is the sequential chart of the data write activity of expression access device 200D.Among Figure 17, when access device 200D write data to Nonvolatile memory devices 100D, at first the access device 200D total amount (to call data volume in the following text) that will write instruction and write data sent Nonvolatile memory devices 100D to.

[0137] among Figure 17, access device 200D transmission successively between transmission stand-down with the data break of 16k byte unit.The periodic table of the data of access device 200D transmission 16k byte is shown transmission cycle Pa, and the time representation of the data of transmission 16k byte is transmission required time Pd.Have, transmission required time Pd is by the performance decision of access device 200D again.Access device 200D determines transmission cycle Pa and the ratio that transmits required time Pd according to the access rate information of Nonvolatile memory devices 100D notice.

[0138] then, the relation of the ratio of transmission required time Pd and transmission cycle Pa with access rate is described.If connecting the bit wide of the external bus of access device 200D and main interface 101 is 4 bits, the transfer clock frequency of access device 200D is 240MHz, and then trying to achieve transmission required time Pd by following formula (7) is about 133 μ S.

[0139] have again, equate promptly not have under the situation about transmitting between stand-down with transmission required time Pd at transmission cycle Pa, trying to achieve access rate Rw by following formula (8) is 120MB/S.

Rw＝16kB/Pa＝16kB/Pd＝120MB/S...(8)

[0140] access rate of establishing Nonvolatile memory devices 100D notice is Rw, and the access rate that writes in the processing of the access device 200D during Pa=Pd is Rmax, and following formula (9) is set up.This moment, Rmax was 120M byte/S.

Pd/Pa＝Rw/Rmax...(9)

[0141] according to this formula (9), establishing Rw is 60M byte/S, and Pd=Pa/2 is then arranged.At this moment, transmission cycle Pa becomes 2 times that transmit required time Pd.

[0142] has again, control part 205 bases are based on formula (9) and Rw transmission cycle Pa that determines and the ratio that transmits required time Pd, with management transmission required time Pd and transmission cycle Pa required times such as counters, control the transmission zero hour of the data of every 16k byte simultaneously.

[0143] then, the control that writes of Memory Controller 110D is described with Figure 18.In the initialization action when power connection, the logical block number and the physical management information that write down in the directorial area of address administration portion 105 based on the physical block in the flash memory 300～315 constitute (S200) such as logical map tables in address administration portion 105.In the writing of following data from access device 200D, Memory Controller 110D is with definite physical addresss such as this logical map tables.Then, Memory Controller 110D writes flash memory 300～315 with temporary transient data of preserving in the impact damper 102 by read-write control part 103.

[0144] after the initialization process of S200, Memory Controller 110D waits for that the designation data from access device 200D writes writes instruction (S201).Memory Controller 110D one receives from access device 200D and writes instruction, and CPU104 just will pass to address administration portion 105 as the logical address that the independent variable that writes instruction transmits.Address administration portion 105 determines physical block based on this logical address.

[0145] CPU104 also sends data quantity transmitted to access rate control part 107 after writing instruction.Access rate control part 107 is based on data quantity transmitted and formula (10-1) and formula (10-2) decision access rate (S202).In the formula, Rw writes fashionable access rate, and Rr is the access rate when reading, and Ds is a data volume.

Write fashionable

Rw＝Hw(Ds)...(10-1)

When reading

Rr＝Hr(Ds)...(10-2)

Have, Hw and Hr are to be variable with data volume Ds again, and being no more than in the temperature T of Nonvolatile memory devices 100D derives the function that access rate Rw and Rr become value the most at a high speed uniquely in the scope that the 1st threshold temperature is ultimate temperature Trisk.This function can be derived as approximate formula by temperature experiment or simulation when Nonvolatile memory devices 100D makes.Have again, have in advance in the access rate control part 107 and formula (10-1) and the corresponding table of formula (10-2), also can be by show to obtain access rate Rw or Rr with reference to this.

[0146] the access rate control part 107 access rate Rw that will calculate like this notifies access device 200D (S203).

[0147] access device 200D determines transmission cycle Pa and the ratio that transmits required time Pd based on notified access rate.Access device 200D is transferred to Nonvolatile memory devices 100D with data by the 16k byte unit according to this ratio.These data temporarily are kept at (S204) the impact damper 102 from the zone of write pointer WP indication.Data are preserved in impact damper 102 in the 2k byte, and read-write control part 103 is read the data based read pointer RP that preserves in the impact damper 102 from impact damper 102, and write non-volatile memory 120 (S205).Carry out the processing of such S204 and S205 repeatedly, up to the data (S206) that transfer out the 16k byte from access device 200D.Have, data transmission of carrying out among S204, the S205 or the timing that writes are identical with the 1st embodiment again.

[0148] then, CPU104 differentiates whether receive end of transmission (EOT) instruction (S207) from access device 200D.If receive the end of transmission (EOT) instruction, then change S201 over to, wait for next read-write indication.On the other hand,, then change S204 over to, successively data temporarily are saved in impact damper 102 if CPU104 does not receive the end of transmission (EOT) instruction from access device 200D.

[0149] as mentioned above, in the Nonvolatile memory system shown in the 4th embodiment, access rate control part 107 is based on access device 200D data designated amount decision access rate.Access rate control part 107 is with this access rate notice access device 200D, and access device 200D writes data according to this access rate.Thereby, can in temperature T is no more than the scope of ultimate temperature Trisk, write data with the highest access rate.That is, user's scald can be avoided causing, data can be write at high speed simultaneously because of the temperature rise of Nonvolatile memory devices 100D.

[0150] has again, in the present embodiment, control access rate by control transmission cycle Pa with the ratio of transmission required time Pd, but also can control access rate by control transmission required time Pd.In addition, data transmission unit can set arbitrarily, is not limited to transmit with 16kB.

[0151] (the 5th embodiment)

Figure 19 is the block diagram of the Nonvolatile memory system in expression the present invention the 5th embodiment.The Nonvolatile memory system of present embodiment comprises Nonvolatile memory devices 100E shown in Figure 19 and constitutes with the access device 200E of Nonvolatile memory devices 100E is housed.In the Nonvolatile memory system of present embodiment, access device 200E newly has the temperature efferent 206 that comprises temperature sensor.Temperature efferent 206 is being provided with temperature sensor with Nonvolatile memory devices 100E proximity, and the temperature information of the Nonvolatile memory devices 100E that temperature sensor is detected offers Nonvolatile memory devices 100E via control part 202 and external bus.Read instruction and the execution of write command in output temperature information termly.

[0152] on the other hand, include temperature preservation portion 115 among the access rate control part 106E of the Memory Controller 110E of Nonvolatile memory devices 100E.Temperature preservation portion 115 does not adopt the sensor of thermistor etc., but receives temperature information from access device 200E, preserves as the temperature T of Nonvolatile memory devices 100A.Except temperature preservation portion 115 be located at the temperature efferent 206 of access device 200E, present embodiment is identical with the 1st embodiment, adopts the Reference numeral identical with the 1st embodiment to represent.Nonvolatile memory devices 100E receives the temperature information that access device 200E provides via main interface 101.

[0153] as mentioned above, in the Nonvolatile memory system in the present embodiment, temperature detecting part 111 is replaced as temperature preservation portion 115, the temperature information that temperature preservation portion 115 receives from access device 200E is used as the temperature T of Nonvolatile memory devices 100E and handles, thus can carry out with the 1st embodiment in the same action of Nonvolatile memory system that illustrates.

[0154] promptly, when the temperature T of Nonvolatile memory devices 100E oversteps the extreme limit temperature T risk, temperature adaptation type control part 112 interrupts the write activity of read-write control part 103, simultaneously busy information is sent to access device 200E, and the data transmission of access device 200E is interrupted.And, restart when temperature T is lower than safe temperature Tsafe that data write and data transmission.Thereby, can control access rate, also can in writing, data at a high speed avoid causing user's scald because of the temperature rise of Nonvolatile memory devices 100E.

[0155] from for example small-sized little device of the such power consumption of audio player with rechargeable battery or dry cell work, has the like that big device of power consumption of film (field camera) that the high capacity rechargeable battery writes down dynamic image and sound, various devices such as the home video tape recording of also useful AC power work or TV, PC etc. all can be considered to access device 200E.The device that wherein power is big, the interior temperature of device can raise often has temperature sensor in this device.The temperature sensor of the thermistor in access device 200E etc. is installed in the installation site of Nonvolatile memory devices, for example be located under the slot or its peripheral situation of storage card, will be also harmless to the temperature information that Nonvolatile memory devices 100E supplies with as the temperature T of Nonvolatile memory devices 100E from access device 200E.In this case, the temperature sensor that sets in advance can be used as the temperature sensor of temperature efferent 206.So, just there is no need in Nonvolatile memory devices 100E to install the temperature sensor of thermistor etc., on the miniaturization of Nonvolatile memory devices 100E and cost, have advantage like this.

[0156] have, it is the data of ultimate temperature Trisk2 that temperature adaptation type control part 112 can be preserved the 3rd threshold temperature that is lower than ultimate temperature Trisk again.When temperature T surpassed this ultimate temperature Trisk2, the data that temperature adaptation type control part 112 will be read and write control part 103 write from zero access and are transformed into low speed access.Meanwhile, temperature adaptation type control part 112 can send indication to the low speed access conversion to access device 200E, and the data transmission of access device 200E is transformed into low speed access from zero access.

[0157] have, the quality standard decision during ultimate temperature Trisk and safe temperature Tsafe are made by Nonvolatile memory devices 100E can be got various values again.

[0158] (the 6th embodiment)

In the 1st, the 3rd above-mentioned embodiment, the environment temperature TE of Nonvolatile memory devices 100A, 100C is made as fixed value, still, in fact is considered to varied device corresponding with Nonvolatile memory devices.Therefore, the environment temperature of the Nonvolatile memory devices difference big because of access device has.

[0159] in the small-sized access device that power consumption is little with the audio player of rechargeable battery or dry cell work, the temperature rise of device itself is very little.If the power consumption of access device is little, only rise approximately about several ℃ sometimes than outside air temperature.Access device like this as illustrating in the 1st embodiment, is fixed on 25 ℃ with the environment temperature TE of Nonvolatile memory devices, does not have any problem in actual the use.

[0160] on the other hand, access device comprises having film (field camera) jumbo rechargeable battery, that write down dynamic image and the sound big device of power consumption like that, the home video tape recording of also useful AC power work or TV, PC etc.In such access device, also there are the heat, the internal temperature that self take place 30 ℃ to 40 ℃ to rise to device about 60 ℃.Thereby, if the environment temperature TE of Nonvolatile memory devices is set to the temperature T that 25 ℃ fixed value is calculated Nonvolatile memory devices, then and very large departing from arranged between the temperature of the Nonvolatile memory devices of reality, the result can not carry out desirable access rate control, Nonvolatile memory devices becomes high temperature, and the danger of scald may take place.

[0161] in the temperature T that writes in the zero hour

Be located at as under 25 ℃ the situation that illustrates in the 1st embodiment, as shown in Figure 8, temperature T progressively is 85 ℃ near saturation temperature along with writing of data afterwards.But, writing the temperature T of the zero hour

In fact become under 40 ℃ the situation, if write with zero access under the condition that illustrates in the 1st embodiment, then as shown in figure 20, temperature T can be along with writing of data progressively near promptly about 100 ℃ of saturation temperature.

[0162] as mentioned above, under the big situation of thermal value big in power consumption, access device itself, environment temperature TE is made as fixed value and produces between the temperature T of the temperature T of the Nonvolatile memory devices 100A that calculates and the Nonvolatile memory devices 100A under the actual environment for use and depart from.

[0163] Figure 21 is the block diagram of the Nonvolatile memory system in expression the present invention the 6th embodiment.The Nonvolatile memory system of present embodiment comprises Nonvolatile memory devices 100F shown in Figure 12 and constitutes with the access device 200F of Nonvolatile memory devices 100F is housed.In the present embodiment, identical with the device of the 1st embodiment except the temperature computation portion 116 of Nonvolatile memory devices 100F be loaded on the environment temperature efferent 207A of access device 200F, adopt the Reference numeral identical to represent with the 1st embodiment.Environment temperature efferent 207A includes the temperature sensor of thermistor etc., measures the environment temperature TE of Nonvolatile memory devices 100F and with its output.Comprise temperature computation portion 116 among the access rate control part 106F of the Memory Controller 110F of Nonvolatile memory devices 100F.Temperature computation portion 116 does not use the sensor of thermistor etc., but obtains the temperature T of Nonvolatile memory devices 100F by the approximate treatment based on formula (5-1) and formula (5-3) that illustrates in the 2nd embodiment.

T＝Fw(Rw，t)+TE...(5-1)

T＝Fr(Rr，t)+TE...(5-3)

Here, T is the temperature of Nonvolatile memory devices 100F, and Rw writes fashionable access rate, and Rr is the access rate when reading, and t is the time of carrying out access.

[0164] access rate Rw and Rr be all by with the write pointer WP of count buffer devices 102 such as counter or the time increment of read pointer RP, and try to achieve divided by the 2k byte with this count value (time).Fw and Fr are the functions of obtaining the temperature rise Δ T of Nonvolatile memory devices 100F with access rate Rw or Rr and time t as variable uniquely.These functions can be derived as the approximate treatment formula by temperature experiment or simulation when Nonvolatile memory devices 100F makes, and have Fig. 8 and integral characteristic shown in Figure 20.

[0165] in the present embodiment, access device 200F passes through the environment temperature TE that environment temperature efferent 207A detects Nonvolatile memory devices 100F, and offers Nonvolatile memory devices 100F via control part 202 and external bus.

[0166] Nonvolatile memory devices 100F receives the temperature information that access device 200F supplies with by main interface 101.The temperature computation portion 116 of access rate control part 106F adopts the environment temperature TE of Nonvolatile memory devices 100F when the calculating of formula (5-1), (5-3).

[0167] Figure 22 is in the access rate control model that is illustrated in as shown in figure 10, interrupts data transmission, restarts data transmission and write the curve map of the time response of the temperature T when handling at moment ts at the moment tr during zero access.Among Figure 22, the temperature T that writes the zero hour is the value of the environment temperature TE that provides of the environment temperature efferent 207A of access device 200F.

[0168] then, temperature T is along with factor moves closer in saturation temperature according to writing the electric power of consumption.But, interrupting data transmission at the overstep the extreme limit moment tr access device 200F of temperature T risk of temperature T, Nonvolatile memory devices 100F interrupts being controlled by the data of reading and writing control part 103 and writes.Thereby temperature T begins to reduce, and is lower than the moment ts of safe temperature Tsafe in temperature T, restarts the data transmission of access device 200F and writing of read-write control part 103, and temperature T restarts to rise.

[0169] have, above explanation is to reach explanation after the steady state (SS) about the temperature in the access device 200F again.But during the action beginning, the environment temperature TE of Nonvolatile memory devices is not a steady temperature, but temperature is along with the action of access device 200F is risen.Therefore, as shown in figure 23, the temperature variation of Nonvolatile memory devices 100F during zero access is the curve that the temperature rise Δ T addition of temperature in the environment temperature TE access device that double dot dash line is represented and Nonvolatile memory devices 100F forms, and can try to achieve the more accurate temperature of Nonvolatile memory devices 100F.Therefore, when for example carrying out access rate control during zero access, equally, shown in the solid line of Figure 24, the temperature variation of Nonvolatile memory devices 100F is that environment temperature that the double dot dash line of Figure 22 is represented is the curve that the temperature rise Δ T addition of temperature in the access device and Nonvolatile memory devices 100F forms, and can more correctly control the temperature of Nonvolatile memory devices 100F.

[0170] as mentioned above, according to the 6th embodiment, the environment temperature of Nonvolatile memory devices 100F is not 25 ℃ a fixed value for example, but the device internal temperature when each access device 200F moved offers Nonvolatile memory devices 100F, and this temperature environment temperature TE of being set to Nonvolatile memory devices 100F calculates the temperature T of Nonvolatile memory devices 100F, can more correctly calculate temperature T.

[0171] (variation)

Then, the variation with regard to the 6th embodiment describes.Replace environment temperature efferent 207A among Figure 21 in this variation and have environment temperature efferent 207B.Environment temperature efferent 207B preserves the information about the temperature rise in the access device 200F in advance, for example preserves in advance when dispatching from the factory, and offers Nonvolatile memory devices 100F.

[0172] the volume difference of the power consumption of access device 200F, housing is owing to the temperature rise meeting of these reason inside is different.Thereby environment temperature efferent 207B will represent that saturation value that access device 200F temperature when real work rises to the temperature T E of which kind of degree for example is kept at (pressing machine) and preserves with the nonvolatile memory or the hardwired logic of ROM (ROM (read-only memory)) or flash memory etc.And, the temperature information of such preservation is provided when access.Nonvolatile memory devices 100F carries out access control with the direct substitution formula of the temperature T E that is provided (5-1), (5-3).At this moment, serviceability temperature sensor and carry out same processing not in the access device.

[0173] (the 7th embodiment)

Then, describe with regard to the 7th embodiment.Figure 25 is the block diagram of the Nonvolatile memory system in expression the present invention the 7th embodiment.The Nonvolatile memory system of present embodiment comprises Nonvolatile memory devices 100G shown in Figure 25 and constitutes with the access device 200G of Nonvolatile memory devices 100G is housed.In the present embodiment, access device 200G indicates Nonvolatile memory devices 100G according to which position that the temperature sensor of thermistor etc. is installed in the access device 200G: be to handle as the temperature T of Nonvolatile memory devices 100G, still the environment temperature TE as Nonvolatile memory devices 100G handles.

[0174] temperature sensor of the thermistor in access device 200G etc. is installed under the installation site (for example slot of storage card) or the situation around it of Nonvolatile memory devices, temperature information efferent 208 will be indicated after the flag set of the temperature information that offers Nonvolatile memory devices 100G from access device 200G as the temperature T processing of Nonvolatile memory devices 100G, export with temperature information.On the other hand, leave the installation site of Nonvolatile memory devices and under the situation of installing at temperature sensor, temperature information efferent 208 will be indicated after the flag set of the temperature information that offers Nonvolatile memory devices 100G from access device 200G as the environment temperature TE processing of Nonvolatile memory devices 100G, export with temperature information.

[0175] Figure 26 A is a temperature information of representing to offer from access device 200G Nonvolatile memory devices 100G, a routine data structure of Figure 26 B indicator sign.Here, the data separation dispensing temperature information of 1 byte.Have again, represent,, also can distribute the bit that surpasses 1 byte to represent on the contrary in order to handle wide temperature range in order to save 1 byte of the also available less than of circuit (register etc.) temperature information.In addition, sign is formed by the R sign that constitutes with 1 bit with the S sign that 2 bits constitute.

[0176] then, state and the action thereof with regard to each sign among Figure 27 describes.Be that S0, the S1 that S indicates is 0 at state A at first, R is masked as at 0 o'clock, and temperature did not rise to the information of which kind of degree when expression had storage to work about access device 200G.

[0177] in addition, the state B of Figure 27 is that R is masked as at 1 o'clock, and temperature rose to the saturation value of the temperature T E of which kind of degree when expression access device 200G internal memory contained expression access device 200G work.In this case, as above-mentioned variation, the saturation value of TE is sent to Nonvolatile memory devices 100G, this temperature is calculated temperature as TE.

[0178] then, the state C of Figure 27 is that the S0 position of S sign is 1, R is masked as at 0 o'clock, be provided with the temperature sensor of thermistor etc. in the expression access device 200A, and, because this temperature sensor is installed in the place of the installation site of leaving Nonvolatile memory devices, the temperature information that indication will be supplied with is handled as the environment temperature TE of Nonvolatile memory devices 100G.

[0179] in this case, as above-mentioned the 6th embodiment explanation, Nonvolatile memory devices 100G receives the temperature information of being supplied with by access device 200G by main interface 101.And the temperature detecting part 117 of access rate control part 106G is with the environment temperature TE of this temperature as Nonvolatile memory devices 100G.By the approximate treatment that illustrates in the 2nd embodiment, obtain the temperature T of Nonvolatile memory devices 100G based on formula (5-1) and formula (5-3).Action afterwards is identical with the 6th embodiment.

[0180] the state D of Figure 27 is that the bit of the S1 of S sign is 1, R is masked as at 0 o'clock, be built-in with the temperature sensor of thermistor etc. in the expression access device 200G, and, because this temperature sensor is contained in around the installation site of Nonvolatile memory devices or its, the indication that the temperature information that providing to be provided is handled as the temperature T of Nonvolatile memory devices 100G.

[0181] in this case, as illustrating in the 5th embodiment, Nonvolatile memory devices 100G receives the temperature information of being supplied with by access device 200G by main interface 101.The temperature detecting part 117 of access rate control part 106G is with the temperature T of this temperature as Nonvolatile memory devices 100G.Action afterwards is identical with the 5th embodiment.

[0182] have, in order to save circuit (register etc.), sign can be represented with less than 3 bits, on the contrary, in order to transmit with other information, perhaps in order representing about the unpack of temperature sensor, also can to distribute above 3 bits and represent again.

[0183] (the 8th embodiment)

Figure 28 is the block diagram of the Nonvolatile memory system of expression the present invention the 8th embodiment.The Nonvolatile memory system of present embodiment comprises access device 200H shown in Figure 28 and Nonvolatile memory devices 100H and constitutes.

[0184] [access device]

Access device 200H includes systems control division 211, encoding and decoding portion 212, ROM/RAM213, display part 214, display control unit 215 and Nonvolatile memory devices control part 216.

[0185] the whole access device 200H of systems control division 211 controls, encoding and decoding portion 212 generates the packed data of dynamic image.The ROM/RAM213 storage is used for the program of systems control division 211 work, also uses as the workspace.The information that display part 214 shows about this Nonvolatile memory system, display control unit 215 controls offer the demonstration of display part 214.Nonvolatile memory devices control part 216H carries out access to Nonvolatile memory devices 100H, includes storage access portion 221, temperature detecting part 222, access rate control part 223 and temperature parameter preservation portion 224.

[0186] carries out reading and writing of data via external bus between storage access portion 221 and the Nonvolatile memory devices 100H.Temperature detecting part 222 has temperature sensor, detects the temperature T of Nonvolatile memory devices 100H.Access rate control part 223 writes Nonvolatile memory devices 100H based on temperature parameter control and the access rate during sense data.There is the temperature parameter that replaces the Nonvolatile memory devices 100H that illustrates later in temperature parameter preservation portion 224 and the temperature parameter that uses.

[0187] the unwanted inscapes of access device 200H of the present invention such as the outside input and output terminal of other images, sound etc., various connectors have been omitted among Figure 28.

[0188] [Nonvolatile memory devices]

Nonvolatile memory devices 100H includes at least 1 nonvolatile memory 120 and Memory Controller 110H.

[0189] identical with the 1st embodiment, nonvolatile memory 120 is preserved user's data, for example uses flash memory.In addition, Memory Controller 110H based on from the data of access device 200H read or write requirement, nonvolatile memory 120 is carried out reading or writing of data.

[0190] Memory Controller 110H includes CPU104, register portion 108, main IF101, impact damper 102 and read-write control part 103.

[0191] CPU104 controls whole Memory Controller 110H.The control information of the Nonvolatile memory devices 100H of register portion 108 preservations temperature parameter described later etc.Main interface IF101 carry out via external bus and access device 200H between the transmitting-receiving of data.Have, external bus comprises clock and constitutes with bus with bus and instruction and data again.Transceive data between impact damper 102 temporary transient preservations and the access device 200H.Read-write control part 103 carries out reading and writing of data via memory bus to nonvolatile memory 120.

[0192] address administration portion 105 will follow the access of access device 200A and the logical address that transmits is transformed into the physical address of nonvolatile memory 120, and it is the module of the recording status etc. of managing non-volatile memory 120.Have, address management method can be realized with general technology, so its explanation is omitted again.

[0193] Figure 29 represents the temperature parameter that the register portion 108 of Memory Controller 110H preserves.But comprise the highest work temperature max, temperature rise speed Tu, saturation temperature Ts and temperature decline rate Td in the temperature parameter shown in Figure 29.

[0194] but the highest work temperature max is the maximum temperature of being allowed in Nonvolatile memory devices 100H access.Temperature rise speed Tu is the rate of rise in temperature of the Nonvolatile memory devices 100H when carrying out access with certain access rate, and saturation temperature Ts is the convergence temperature of this ascending temperature.Temperature decline rate Td is the temperature decline rate of Nonvolatile memory devices 100H when not carrying out data transmission.

[0195] preserves temperature rise speed Tu and the saturation temperature Ts corresponding in the temperature parameter, among Figure 29,, preserve N kind temperature rise speed Tu1～Tun and N kind saturation temperature Ts1～Tsn corresponding to N kind access rate with a plurality of access rates.

[0196] the temperature parameter preservation portion of the access device 200H 224 above-mentioned temperature parameter that prestores by the type of Nonvolatile memory devices is arranged again.Thereby if Nonvolatile memory devices storage temperature parameter not, available this temperature parameter replaces the temperature parameter of Nonvolatile memory devices.

[0197] [access rate control method]

The method of access device 200H control access rate is described with Figure 30 and Figure 31.With the rising edge of clock synchronously and with the unit move instruction and the data of regulation.For example instructing with 4 bytes (Bytes) is unit, and data are that unit transmits with 512 bytes.On these instruction and datas, also can add opening flag, end mark or in order to detect wrong CRC sign indicating number etc.

[0198] at first, the 1st access rate control method is described.This method is controlled access rate by the frequency that access device 200H changes clock.Figure 30 represents that clock in this method is with 3 kinds of different relations between the waveform of bus and instruction that is transmitted and the data.In 3 kinds of situations (A)～(C) of Figure 30, the clock period (A), therefore the clock frequency of (A) was the highest for the shortest.(B), clock period of (C) is elongated successively, therefore the clock frequency of (B), (C) also reduces successively.As shown in the drawing, because it is the clock frequency difference, also inequality with the transmission time of the instruction of clock synchronization transmission or data.Clock frequency is high more, shortens with the instruction of clock synchronization transmission, the transmission time of data, and therefore, (A) expression is to reach the situation that (C) high access rate is carried out more zero access than (B).Like this, just can control access rate by the frequency that changes clock.

[0199] then, the 2nd access rate control method is described.In this method, access device 200H controls access rate by the instruction of the change unit of regulation or the transmission intercal of data.Clock when Figure 31 represents to use this method is with the waveform of bus and the relation between instruction that is transmitted and the data.(A)～(C) clock frequency in is identical, but has the data transmission interval difference of 512 bytes.(A) transmission intercal is the shortest, (B), the transmission intercal of (C) is elongated successively.Transmission intercal is short more, just can be with the data of the short more time transmission unit of regulation, and therefore, access rate (A) is the highest, can carry out access the most at a high speed.On the other hand, under (B) and situation (C),, become the access that speed is lower than (A) because sky is opened the instruction of the certain intervals unit of regulation and the transmission of data.So, can control access rate by the interval that changes data transmission.

[0200] has again, in 2 kinds of access rate control methods that illustrate among Figure 30 and Figure 31 any can be used for access device 200H, but also these 2 kinds of methods can be used in combination.With these 2 kinds of control method combinations, when when changing clock frequency, changing the transmission intercal of instruction and data, can be than only more diversely changing access rate with any control method.

[0201] [setting of access rate]

The establishing method of the 1st access rate then, is described.Figure 32 is the curve map of access device 200H relation of the temperature and time of Nonvolatile memory devices 100H during to Nonvolatile memory devices 100H access of representing present embodiment by access rate.Among Figure 32, initial temperature Tini is the temperature T of the Nonvolatile memory devices 100H that access device 200H detects when writing beginning.Maximum temperature Tmax is the maximum temperature that Nonvolatile memory devices 100H can work, and is included in from the temperature parameter that the register portion 108 of Nonvolatile memory devices 100H reads.In addition, ultimate temperature Trisk limits on user's temperature of not scalding when using Nonvolatile memory devices 100H.This temperature is determined according to the specification of access device 200H.Curve among the figure (1), (2) and (3) are represented the temperature rising situation under the different access rates separately, the situation when curve (1) expression access rate is the highest.In addition, represent with Ts1, Ts2, Ts3 respectively in the saturation temperature of each access rate.

[0202] temperature parameter preserved of Nonvolatile memory devices 100H is the temperature parameter under other different conditions of the inherent condition that possesses with access device 200H, access device 200H calculates correlationship curve (1)～(3) of data write time and temperature according to the temperature parameter of register portion 108 and the inherent condition of access device 200H with function.Inherent condition among this access device 200H, is connected the conditions relevant with the temperature rise of Nonvolatile memory devices 100H such as shape of the connector portion of Nonvolatile memory devices 100H at the size that comprises the housing of access device 200H for example and material.In addition, the function of obtaining each curve (1)～(3) is tried to achieve in advance by temperature experiment or simulation when the manufacturing of access device 200H.And Figure 32 also shows and 3 kinds of curve (1)～(3) that access rate is corresponding for example, and still, the curve that access device 200H is derived is not limited to these 3 kinds.The whole parameters corresponding with temperature parameter are come the curve that the induced representation temperature rises in the access rate that access device 200H has by access device 200H.Perhaps, also can begin from the low rate the access rate that has derives, and the moment that surpasses Trisk in the saturation temperature of calculating finishes to derive.

[0203] from the curve that obtains like this, select saturation temperature be no more than ultimate temperature Trisk and with the immediate curve of ultimate temperature Trisk.Then, the corresponding access rate of temperature parameter that will use when making this curve is defined as the access rate to Nonvolatile memory devices 100H.For example under situation shown in Figure 32, if trade-off curve (3), saturation temperature Ts3 just can not go beyond the limit of temperature T risk.Thereby access device 200H selects the access rate corresponding with curve (3) to carry out access.

[0204] then, definite method of the 2nd access rate is described.If the data transmission of access device 200H finished in the short time, then also can select the overstep the extreme limit access rate of temperature T risk of saturation temperature.That is, although carry out data transmission, as long as end data transmission before the environment temperature of Nonvolatile memory devices 100H reaches capacity temperature T risk with the overstep the extreme limit access rate of temperature T risk of saturation temperature.

[0205] for example, among Figure 32, although select and the corresponding access rate of curve (1), the time that data transmission is required, as long as the time of Nonvolatile memory devices 100H consecutive access, the environment temperature of Nonvolatile memory devices 100H just can not overstep the extreme limit temperature T risk below time ta.Thereby access device 200H selects and the corresponding access rate of curve (1).Similarly, if the consecutive access time is below the tb, the access rate shown in the access device 20QH trade-off curve (2) then.The required time of data transmission calculates according to data quantity transmitted and access rate.So, in being no more than the scope of ultimate temperature Trisk, the environment temperature of Nonvolatile memory devices 100H selects high as far as possible access rate if consider the time of access Nonvolatile memory devices 100H continuously, and just can be in the transmission of short time end data.In addition, because access device 200H has display part 214, can show selected access rate and temperature parameter.

[0206] [access sequence]

Figure 33 is the process flow diagram of the control of access device 200H during to Nonvolatile memory devices 100H access of expression present embodiment.Access device 200H among Figure 33 at first carries out the initialization (S300) of Nonvolatile memory devices 100H, makes Nonvolatile memory devices 100H become the possible state of read-write.In case the reading and writing data request (S301) to Nonvolatile memory devices 100H takes place, temperature detecting part 222 just detects the temperature T (S302) of Nonvolatile memory devices 100H by temperature sensor.Then, access device 200H judges whether Nonvolatile memory devices 100H preserves temperature parameter (S303).If Nonvolatile memory devices 100H preserves temperature parameter, just obtain this temperature parameter, and calculate the saturation temperature (S304) of Nonvolatile memory devices 100H according to this parameter.Suppose not storage temperature parameter of Nonvolatile memory devices 100H, then access device 200H just calculates the saturation temperature (S305) of Nonvolatile memory devices 100H with the temperature parameter of temperature parameter preservation portion 224 preservations.After S304 or the S305, the access rate control part 223 of access device 200H determines access rate in a manner described according to these results that calculate, and sets (S306) as the access rate of reading and writing data.

[0207] then, the access rate that sets of storage access portion 221 usefulness is carried out the reading or writing of data (S307) to Nonvolatile memory devices 100H.The processing of S307 Once you begin, temperature detecting part 222 just detects the temperature T of Nonvolatile memory devices 100H, storage access portion 221 is ultimate temperature Trisk relatively (S308) with this temperature T and the 1st threshold temperature.If temperature T is lower than ultimate temperature Trisk among the S306, that just confirms data reads and writes whether finish (S309).Do not finish if read and write also, treatment scheme is just returned S307, continues data write.If read and write end, treatment scheme is just returned S301, waits for next read-write requests.In the processing of S308, if temperature T is higher than ultimate temperature Trisk, just stop to read and writing of data, waiting temperature T becomes the state that is lower than Trisk.If temperature T is lower than ultimate temperature Trisk, then restart reading and writing of data, handle entering S309.Have, in the present embodiment, because access rate is specified to and makes temperature T below ultimate temperature Trisk, temperature T can not surpass Trisk among the step S308 usually again.By as upper type, carry out access to Nonvolatile memory devices 100H.

[0208] as described above, in the Nonvolatile memory system of present embodiment, access device 200H selects access rate with the temperature parameter of Nonvolatile memory devices 100H, carries out reading and writing of data.Thereby the user does not have the danger of scald in Nonvolatile memory devices 100H use, but and can provide Nonvolatile memory devices, access device and the Nonvolatile memory system of high speed reads write data.

[0209] (the 9th embodiment)

Figure 34 is the block diagram of the Nonvolatile memory system of expression the present invention the 9th embodiment.As shown in figure 34, the Nonvolatile memory system of present embodiment comprises access device 200I and Nonvolatile memory devices 100H and constitutes.Access device 200I has Nonvolatile memory devices control part 216I.Access rate control part 225 be used for being controlled at and Nonvolatile memory devices 100H between carry out data read and write fashionable access rate.Have, among Figure 34, the inscape identical with the 8th embodiment all adopts the Reference numeral identical with Figure 28 again.

[0210] Figure 35 is the process flow diagram of the control flow when access device 200I is to Nonvolatile memory devices 100H access in expression the 9th embodiment.S300～S305 and S309 carry out S300～S305 and the same processing of S309 among Figure 32 with the 8th embodiment among Figure 35, so its explanation is omitted.

[0211] among Figure 35, after S304 or the S305, access rate control part 225 will be consistent with the access rate of access device 200I or the accessible maximum access rate of access device 200I is set (S400) as the access rate to Nonvolatile memory devices 100H.Then, the access rate of setting among saturation temperature that obtains among the temperature T that obtains among the access rate control part 225 usefulness S302, the S304 and the S400, but set transmission time trw described later (S401).Afterwards, but storage access portion 221 with setting access speed during transmission time trw, carry out write (S402) of reading of data or data from Nonvolatile memory devices 100H.Temperature detecting part 222 is measured the temperature T of Nonvolatile memory devices 100H and is compared with ultimate temperature Trisk, the time of perhaps measuring Nonvolatile memory devices 100H consecutive access is transmission time t, and with transmission time t with can to time of Nonvolatile memory devices 100H consecutive access can transmission time trw relatively (S403).If not the temperature T of volatile storage 100H is lower than the ultimate temperature Trisk of regulation, but or transmission time t shorter than transmission time trw, then enter S309, differentiate whether the end of transmission (EOT) instruction is arranged.If not more than the ultimate temperature Trisk of the temperature T of volatile storage 100H for regulation, or but transmission time t is more than the transmission time trw, then interrupt reading and writing of data, it is safe temperature Tsafe following (S404) that waiting temperature becomes the 2nd threshold temperature.If temperature becomes below the safe temperature Tsafe of regulation, then restart reading or writing of data, handle entering S309.In S309, do not finish if read or write, then treatment scheme turns back to S402, continues the transmission and the data write of instruction.If read or write end, then treatment scheme turns back to S301, waits for next read-write requests.

[0212] environment temperature T and the time relation of Figure 36 access device 200I Nonvolatile memory devices 100H during of representing present embodiment by access rate to Nonvolatile memory devices 100H access.Among Figure 36, what illustrate in initial temperature Tini and ultimate temperature Trisk and the 8th embodiment is identical.Safe temperature Tsafe is lower than ultimate temperature Trisk, is based on the 2nd definite threshold temperature of specification of access device 200H.In a single day this safe temperature Tsafe rises to ultimate temperature Trisk in the environment temperature of Nonvolatile memory devices 100H and after data transmission is interrupted, becomes the benchmark whether differentiation restarts data transmission.

[0213] situation of the access rate that has nothing in common with each other of the curve (1) of the wave mode of the correlationship of expression data write time shown in Figure 36 and temperature, (2) and (3) expression.Temperature ascensional range shown in each curve is identical with the 8th embodiment, according to temperature rise speed Tu corresponding with each access rate among Figure 29 and the inherent condition of access device 200I, uses the function of deriving by temperature experiment or simulation to calculate.Temperature fall when in addition, transmission stops is calculated according to the temperature decline rate Td of Figure 29 and the inherent condition of access device 200I.At first, use temperature rise speed Tu makes the curve from initial temperature Tini to ultimate temperature Trisk, and then serviceability temperature decline rate Td makes the curve from ultimate temperature Trisk to safe temperature Tsafe.Then, make curve, repeat aforesaid method and make curve from ultimate temperature Trisk to safe temperature Tsafe from safe temperature Tsafe to ultimate temperature Trisk.Repeat the rising between this ultimate temperature Trisk and the safe temperature Tsafe and the curve of decline, draw the curve of wave mode.

[0214] in this curve (1)～(3), environment temperature T from safe temperature Tsafe to ultimate temperature Trisk rise during be can be to the time of Nonvolatile memory devices 100H consecutive access, but be expressed as transmission time trw.Among this figure, curve (1)～(3) but but transmission time trw be expressed as transmission time trw1～trw3 respectively.Have again, here as shown in figure 36, illustration with 3 curve (1)～(3) that access rate is corresponding, but in fact access device 200I selects consistent with the access rate of self, or be no more than 1 the highest access rate of the access rate of self, and derive the curve corresponding with the access rate of this selection.

[0215] in addition, but in the judgement of the S403 of Figure 35, done the comparison of the comparison of temperature T and ultimate temperature Trisk or transmission time t and transmission time trw.But, for example according to the curve (1) of Figure 36, but owing to surpass under the situation of transmission time trw in the time of access Nonvolatile memory devices 100H continuously, the simultaneous temperature T temperature T risk that also oversteps the extreme limit, therefore, if the writing and read of control data, the then temperature T of the Nonvolatile memory devices 100H temperature T risk that also can not overstep the extreme limit so that but the time of consecutive access is no more than transmission time trw.

[0216] access device 200I is in the access rate of the S400 of Figure 35 is set after the setting access speed, but calculates transmission time trw according to opisometer shown in Figure 36.For example, if the curve corresponding with the access rate of access device 200I is curve (1), but it then should transmission time trw be the time shown in the trw1 from safe temperature Tsafe to ultimate temperature Trisk.If curve (2) or (3), but then transmission time trw becomes trw2 or trw3 respectively.In addition, access device 200I has display part 214, but can show the access rate or the temperature parameter transmission time of selection.

[0217] has again, 3 kinds of curves to Figure 36 are illustrated as the curve that is illustrated in 3 kinds of temperature variation under the different access rates, but,, can obtain 3 kinds of curves equally with Figure 36 sometimes about corresponding to 3 kinds of same access rate different Nonvolatile memory devices.This is because the temperature ascensional range can be different variant because of Nonvolatile memory devices, thereby, even but be that same access rate transmission time trw also can be different.

[0218] in addition, in this embodiment, because access rate is defined as making temperature T to become below the ultimate temperature Trisk, temperature T can not surpass Trisk among step S403, the S404 usually.As described above, Nonvolatile memory devices 100H is carried out access.

[0219] as described above, but off and on Nonvolatile memory devices 100H is carried out reading and writing of data based on access rate and transmission time, with the temperature maintenance of Nonvolatile memory devices 100H below ultimate temperature Trisk.If like this, then do not have the danger of scald, and can provide can the high speed reads write data Nonvolatile memory devices, main device and Nonvolatile memory system.

[0220] (the 10th embodiment)

Figure 37 is the block diagram of the Nonvolatile memory system of expression the present invention the 10th embodiment.The Nonvolatile memory system of present embodiment comprises access device 200J and Nonvolatile memory devices 100J and constitutes.Among Figure 37, the inscape same with the 8th embodiment adopts the Reference numeral identical with Figure 28.

[0221] Figure 38 A, Figure 38 B represent to have the dynamic image logging mode of access device 200I.Shown in Figure 38 A, the encoding and decoding portion 217 of access device 200J has the M kind pattern that bit rate is 8Mbps～24Mbps, or frame rate shown in Figure 38 B is the M kind pattern of 15fps～60fps.

[0222] in the present embodiment, with the 8th or the 9th embodiment is the same set access rate after, the pattern that is expressed as bit rate or frame rate of determined access rate is selected to satisfy by encoding and decoding portion 217 according to Figure 28 A or Figure 38 B.Then, based on selected pattern, the packed data that encoding and decoding portion 217 is generated writes Nonvolatile memory devices 100J.Action in addition is identical with the 8th or the 9th embodiment.

[0223] here, encoding and decoding portion 217 usefulness for example the algorithm of MPEG2 or MPEG4 etc. generate packed data.The change of bit rate or the modification of frame rate become possibility as the insertion piece number of interval, P frame or the B frame of quantizing bit number by changing data or I frame.

[0224] as described above, determine that based on access rate the bit rate of dynamic image or frame rate carry out the writing of Nonvolatile memory devices 100I, thereby the temperature T of Nonvolatile memory devices 100J can be maintained below the ultimate temperature Trisk.Thereby, do not have the danger of scald, and can provide and can not can stop to write down, writing down the Nonvolatile memory devices of dynamic image, main device and Nonvolatile memory system because of heating.

[0225] has again, the relation of the access rate of Nonvolatile memory devices 100J and temperature variation press Nonvolatile memory devices kind and under roughly certain situation, if the kind of the Nonvolatile memory devices that uses by access device 200H, 200I and 200J is preserved the temperature parameter of Nonvolatile memory devices, then carry out access rate control, also can obtain effect of the present invention based on this temperature parameter value.

[0226] self-evident, in the 1st～the 10th embodiment during the serviceability temperature sensor in its kind and indefinite, can use contact, various sensors such as non-contacting, thermistor or thermopair.

[0227] and, the Nonvolatile memory system of the 4th above-mentioned embodiment is characterised in that, if know the data volume of read-write in advance, do not carry out data write after the access rate of temperature T risk in that temperature T is overstepped the extreme limit.Thereby the Nonvolatile memory system of the 4th embodiment is suitable for transcribing the purposes of the data of having recorded on other recording mediums, promptly is applicable to the data volume that record is known in advance.The Nonvolatile memory system of other embodiments is suitable for the purposes of real time record dynamic image etc., promptly is suitable for not knowing the purposes of record data amount in advance.

[0228] have, in the 2nd embodiment, access device 200B includes cooling end 204, but also can comprise cooling end in other embodiments again.Have again,, also can obtain effect of the present invention even if access device does not comprise display part 201.Even do not comprise cooling end 204, the user also can learn the state of Nonvolatile memory devices according to the status information that display part 201 shows.Thereby the user can not make temperature use Nonvolatile memory devices with rising too high.

Utilize possibility on the industry

[0229] in the Nonvolatile memory system of the present invention, adopted reply to result from a high speed The heating of the nonvolatile memory of reading and writing data and be unlikely to method to user's cause danger. The present invention is not only applicable to semiconductor memory card, is using the non-volatile of semiconductor memory card etc. The rest image record regenerator of storage device, dynamic image device for reproducing recorded or mobile electricity All can effectively be utilized in the words.

Claims (54)

1. a basis is indicated the Nonvolatile memory devices of reading and writing that carries out data from the access of outside, it is characterized in that,

Possess: the nonvolatile memory of storage data; And

Described nonvolatile memory is carried out the Memory Controller of reading and writing data,

Described Memory Controller has the access rate control part that comes the access rate of reading or writing of control data according to the condition of work of reading or write fashionable described Nonvolatile memory devices of described data.

2. the described Nonvolatile memory devices of claim 1 is characterized in that,

Described condition of work is the temperature of described Nonvolatile memory devices,

Described access rate control part possesses:

Temperature detecting part detects the temperature of described Nonvolatile memory devices; And

Temperature adaptation type control part, preserving described Nonvolatile memory devices uses and goes up i.e. i.e. the 2nd threshold temperature of the 1st threshold temperature and the safe temperature that is lower than described the 1st threshold temperature of limit under the dangerous temperature, the temperature of measuring at described temperature detecting part stops access when being higher than described the 1st threshold temperature, restart access when the temperature of measuring at described temperature detecting part is lower than described the 2nd threshold temperature.

3. the described Nonvolatile memory devices of claim 2 is characterized in that,

The temperature adaptation type control part of described access rate control part is preserved expression and described Nonvolatile memory devices and is used the 3rd threshold temperature of going up the state that dangerous temperature closes on, the access rate control that the temperature of measuring at described temperature detecting part reduces access rate when being higher than described the 3rd threshold temperature.

4. the described Nonvolatile memory devices of claim 2 is characterized in that,

Described temperature detecting part comprises temperature sensor.

5. the described Nonvolatile memory devices of claim 1 is characterized in that,

Described access rate control part has the status information generating unit, and this status information generating unit generates the status information of the state of the described Nonvolatile memory devices of expression, and described state information notification is arrived outside.

6. the described Nonvolatile memory devices of claim 5 is characterized in that,

Described status information is the information of the temperature of the described Nonvolatile memory devices of expression.

7. the described Nonvolatile memory devices of claim 5 is characterized in that,

Described status information is a warning message, and this warning message represents that the temperature of described Nonvolatile memory devices is higher than described Nonvolatile memory devices and uses and go up under the dangerous temperature i.e. the 1st threshold temperature of limit.

8. the described Nonvolatile memory devices of claim 5 is characterized in that,

Described status information is an access rate control implementation information, and this access rate control implementation information represents whether to have carried out described access rate control.

9. the described Nonvolatile memory devices of claim 5 is characterized in that,

Described status information is the read-write permitted hours, and this read-write permitted hours represents that the temperature of described Nonvolatile memory devices begins to use the i.e. time of the 1st threshold temperature of limitting under the temperature that goes up danger to reaching described Nonvolatile memory devices from access.

10. the described Nonvolatile memory devices of claim 5 is characterized in that,

Described status information is a read-write permission amount, this read-write permission scale shows that the temperature until described Nonvolatile memory devices reaches described Nonvolatile memory devices and uses and go up under the dangerous temperature i.e. the 1st threshold temperature of limit, can be to the data volume of described Nonvolatile memory devices read-write.

11. the described Nonvolatile memory devices of claim 1 is characterized in that,

Described condition of work is the temperature of described Nonvolatile memory devices,

Described access rate control part possesses:

Temperature computation portion is the temperature that variable calculates described Nonvolatile memory devices with access rate with described access rate to the time that described non-volatile apparatus carries out reading and writing data; And

Temperature adaptation type control part, preserving described Nonvolatile memory devices uses and goes up i.e. i.e. the 2nd threshold temperature of the 1st threshold temperature and the safe temperature that is lower than described the 1st threshold temperature of limit under the dangerous temperature, the temperature of measuring at described temperature detecting part stops access when being higher than described the 1st threshold temperature, restart access when the temperature of calculating in described temperature computation portion is lower than described the 2nd threshold temperature.

12. the described Nonvolatile memory devices of claim 11 is characterized in that,

The temperature adaptation type control part of described access rate control part is preserved expression and described Nonvolatile memory devices and is used the 3rd threshold temperature of going up the state that dangerous temperature closes on, the access rate control that the temperature of calculating in described temperature computation portion reduces access rate when being higher than described the 3rd threshold temperature.

13. the described Nonvolatile memory devices of claim 1 is characterized in that,

Described condition of work is the data volume when described Nonvolatile memory devices is carried out access,

Described access rate control part is the epharmonic access rate control part of data volume, this access rate control part decides access rate based on described data volume, limit is the 1st threshold temperature under the upward dangerous temperature of described Nonvolatile memory devices use so that described Nonvolatile memory devices is no more than, and notifies the outside with described access rate.

14. the described Nonvolatile memory devices of claim 1 is characterized in that,

Described condition of work is the temperature of described Nonvolatile memory devices,

Described access rate control part possesses:

Temperature preservation portion, the temperature that the described Nonvolatile memory devices that provides from the outside is provided; And

Temperature adaptation type control part, preserving described Nonvolatile memory devices uses and goes up i.e. i.e. the 2nd threshold temperature of the 1st threshold temperature and the safe temperature that is lower than described the 1st threshold temperature of limit under the dangerous temperature, the temperature of preserving in described temperature preservation portion stops access when being higher than described the 1st threshold temperature, restart access when the temperature of preserving in described temperature preservation portion is lower than described the 2nd threshold temperature.

15. the described Nonvolatile memory devices of claim 14 is characterized in that,

The temperature adaptation type control part of described access rate control part is preserved expression and described Nonvolatile memory devices and is used the 3rd threshold temperature of going up the state that dangerous temperature closes on, and the temperature of preserving in described temperature preservation portion is carried out the access rate control that access rate is reduced when being higher than described the 3rd threshold temperature.

16. the described Nonvolatile memory devices of claim 1 is characterized in that,

Described condition of work is the temperature of described Nonvolatile memory devices,

Described access rate control part possesses:

Temperature computation portion, the environment temperature the when temperature of the described Nonvolatile memory devices that will provide from the outside begins as access, and calculate the temperature of Nonvolatile memory devices based on this environment temperature and access time; And

Temperature adaptation type control part, preserving described Nonvolatile memory devices uses and goes up i.e. i.e. the 2nd threshold temperature of the 1st threshold temperature and the safe temperature that is lower than described the 1st threshold temperature of limit under the dangerous temperature, the temperature of calculating in described temperature computation portion stops access when being higher than described the 1st threshold temperature, restart access when the temperature of calculating in described temperature computation portion is lower than described the 2nd threshold temperature.

17. the described Nonvolatile memory devices of claim 16 is characterized in that,

The temperature adaptation type control part of described access rate control part is preserved expression and described Nonvolatile memory devices and is used the 3rd threshold temperature of going up the state that dangerous temperature closes on, and the temperature of calculating in described temperature computation portion is carried out the access rate control that access rate is reduced when being higher than described the 3rd threshold temperature.

18. one kind has access device and according to the Nonvolatile memory system that carries out the Nonvolatile memory devices of reading and writing of data from the access of described access device indication, it is characterized in that,

Described Nonvolatile memory devices possesses:

The nonvolatile memory of storage data; And

Described nonvolatile memory is carried out the Memory Controller of reading and writing data,

Described Memory Controller has the access rate control part that comes the access rate that control data reads or write according to the condition of work of reading or write fashionable described Nonvolatile memory devices of described data.

19. the described Nonvolatile memory system of claim 18 is characterized in that,

Described condition of work is the temperature of described Nonvolatile memory devices,

Described access rate control part possesses:

Temperature detecting part detects the temperature of described Nonvolatile memory devices; And

Temperature adaptation type control part, preserving described Nonvolatile memory devices uses and goes up i.e. i.e. the 2nd threshold temperature of the 1st threshold temperature and the safe temperature that is lower than described the 1st threshold temperature of limit under the dangerous temperature, the temperature of measuring at described temperature detecting part stops access when being higher than described the 1st threshold temperature, restart access when the temperature of measuring at described temperature detecting part is lower than described the 2nd threshold temperature.

20. the described Nonvolatile memory system of claim 19 is characterized in that,

The temperature adaptation type control part of described access rate control part is preserved expression and described Nonvolatile memory devices and is used the 3rd threshold temperature of going up the state that dangerous temperature closes on, carries out the access rate control that access rate is reduced when the temperature of measuring at described temperature detecting part is higher than described the 3rd threshold temperature.

21. the described Nonvolatile memory system of claim 18 is characterized in that,

Described temperature detecting part comprises temperature sensor.

22. the described Nonvolatile memory system of claim 18 is characterized in that,

Described access rate control part has the status information generating unit, generates the status information of the state of the described Nonvolatile memory devices of expression, and with the described access device of described state information notification.

23. the described Nonvolatile memory system of claim 18 is characterized in that,

Described condition of work is the temperature of described Nonvolatile memory devices,

Described access rate control part possesses:

Temperature computation portion is the temperature that variable is calculated described Nonvolatile memory devices with access rate with described access rate to the time that described non-volatile apparatus carries out reading and writing data; And

Temperature adaptation type control part, preserving described Nonvolatile memory devices uses and goes up i.e. i.e. the 2nd threshold temperature of the 1st threshold temperature and the safe temperature that is lower than described the 1st threshold temperature of limit under the dangerous temperature, the temperature of calculating in described temperature computation portion stops access when being higher than described the 1st threshold temperature, restart access when the temperature of calculating in described temperature computation portion is lower than described the 2nd threshold temperature.

24. the described Nonvolatile memory system of claim 23 is characterized in that,

The temperature adaptation type control part of described access rate control part is preserved expression and described Nonvolatile memory devices and is used the 3rd threshold temperature of going up the state that dangerous temperature closes on, carries out the access rate control that access rate is reduced when the temperature of measuring in described temperature computation portion is higher than described threshold temperature.

25. the described Nonvolatile memory system of claim 18 is characterized in that,

Described condition of work is the data volume when described Nonvolatile memory devices is carried out access,

Described access rate control part is the epharmonic access rate control part of data volume, this access rate control part decides access rate based on described data volume, limit is the 1st threshold temperature under the upward dangerous temperature of described Nonvolatile memory devices use so that described Nonvolatile memory devices is no more than, and notify described access device with described access rate

Described access device carries out access with the access rate that obtains from described Nonvolatile memory devices to described Nonvolatile memory devices.

26. the described Nonvolatile memory system of claim 18 is characterized in that,

Described condition of work is the temperature of described Nonvolatile memory devices,

Described access rate control part possesses:

Temperature preservation portion, the temperature that the described Nonvolatile memory devices that provides from described access device is provided; And

Temperature adaptation type control part, preserving described Nonvolatile memory devices uses and goes up i.e. i.e. the 2nd threshold temperature of the 1st threshold temperature and the safe temperature that is lower than described the 1st threshold temperature of limit under the dangerous temperature, the temperature of preserving in described temperature preservation portion stops access when being higher than described the 1st threshold temperature, restart access when the temperature of preserving in described temperature preservation portion is lower than described the 2nd threshold temperature.

27. the described Nonvolatile memory system of claim 26 is characterized in that,

The temperature adaptation type control part of described access rate control part is preserved expression and described Nonvolatile memory devices and is used the 3rd threshold temperature of going up the state that dangerous temperature closes on, and the temperature of preserving in described temperature preservation portion is carried out the access rate control that access rate is reduced when being higher than described the 3rd threshold temperature.

28. the described Nonvolatile memory system of claim 18 is characterized in that,

Described condition of work is the temperature of described Nonvolatile memory devices,

Described access rate control part possesses:

Temperature computation portion, the environment temperature the when temperature of the described Nonvolatile memory devices that will provide from described access device begins as access is calculated the temperature of Nonvolatile memory devices based on this environment temperature and access time;

Temperature adaptation type control part, preserving described Nonvolatile memory devices uses and goes up i.e. i.e. the 2nd threshold temperature of the 1st threshold temperature and the safe temperature that is lower than described the 1st threshold temperature of limit under the dangerous temperature, the temperature of calculating in described temperature computation portion stops access when being higher than described the 1st threshold temperature, restart access when the temperature of calculating in described temperature computation portion is lower than described the 2nd threshold temperature.

29. the described Nonvolatile memory system of claim 28 is characterized in that,

The temperature adaptation type control part of described access rate control part is preserved expression and described Nonvolatile memory devices and is used the 3rd threshold temperature of going up the state that dangerous temperature closes on, carries out the access rate control that access rate is reduced when the temperature of calculating in described temperature computation portion is higher than described the 3rd threshold temperature.

30. the described Nonvolatile memory system of claim 18 is characterized in that,

Described access device has the temperature information efferent, this temperature information efferent is read the temperature value that the temperature sensor in the described access device is measured, and offers described Nonvolatile memory devices with the sign that the described access device of expression has a situation of temperature sensor as the temperature information in the described access device.

31. the described Nonvolatile memory system of claim 30 is characterized in that,

The temperature that described temperature information efferent is measured the temperature sensor in the described access device is that the sign of any one party in the temperature of described Nonvolatile memory devices and the environment temperature offers described Nonvolatile memory devices with expression.

32. one kind have access device be connected with described access device, according to the Nonvolatile memory system that carries out the Nonvolatile memory devices of reading and writing of data from the access of described access device indication, it is characterized in that,

Described Nonvolatile memory devices possesses:

The nonvolatile memory of storage data; And

Described nonvolatile memory is carried out the Memory Controller of reading and writing data,

Described Memory Controller comprises register portion, it is the temperature parameter of saturation temperature that this register portion preserves the temperature rising back convergent temperature that includes the rate of rise in temperature of described Nonvolatile memory devices, described Nonvolatile memory devices, and this temperature parameter exported to described access device

Described access device possesses:

Temperature detecting part detects the temperature of described Nonvolatile memory devices; And

The access rate control part, the temperature of the described Nonvolatile memory devices of measuring with temperature parameter of obtaining from described Nonvolatile memory devices and described temperature detecting part, calculate the temperature variation of the described Nonvolatile memory devices of following when carrying out data transmission by each set access rate of described access device, for described temperature variation, utilize the temperature of described Nonvolatile memory devices be no more than described Nonvolatile memory devices use go up under the dangerous temperature limit promptly the access rate of the 1st threshold temperature come described Nonvolatile memory devices is carried out access.

33. one kind have access device be connected with described access device, according to the Nonvolatile memory system that carries out the Nonvolatile memory devices of reading and writing of data from the access of described access device indication, it is characterized in that,

Described Nonvolatile memory devices possesses:

The nonvolatile memory of storage data; And

According to described nonvolatile memory being carried out the Memory Controller of reading and writing data from the indication of described access device,

Described access device possesses:

Detect the temperature detecting part of the temperature of described Nonvolatile memory devices;

The temperature rising back convergent temperature that preservation comprises the rate of rise in temperature of described Nonvolatile memory devices, described Nonvolatile memory devices is the temperature parameter preservation portion of the temperature parameter of saturation temperature; And

The access rate control part, the temperature of the described Nonvolatile memory devices that temperature parameter of preserving with described temperature parameter preservation portion and described temperature detecting part are measured, calculate the temperature variation of the described Nonvolatile memory devices of following when carrying out data transmission by each set access rate of described access device, for described temperature variation, utilize the temperature of described Nonvolatile memory devices be no more than described Nonvolatile memory devices use go up under the dangerous temperature limit promptly the access rate of the 1st threshold temperature come described Nonvolatile memory devices is carried out access.

34. the described Nonvolatile memory system of claim 32 is characterized in that,

The temperature decline rate that also comprises the described Nonvolatile memory devices when not carrying out access in the temperature parameter of described register portion,

The temperature of the described Nonvolatile memory devices that described access rate control part is measured with described temperature information and described temperature detecting part, according to for the set access rate of described access device, decide the described access time continuously but reach described the 1st threshold temperature temperature variation that the temperature of described Nonvolatile memory devices drops to the described Nonvolatile memory devices when becoming the temperature of restarting the benchmark that data transmission uses promptly the 2nd threshold temperature just restarting data transmission with regard to stopping data transmission, but and described nonvolatile memory is carried out access based on the access time that is determined in the temperature of described Nonvolatile memory devices.

35. the described Nonvolatile memory system of claim 32 is characterized in that,

Described access rate control part is controlled access rate by changing in order to the clock frequency that writes or read of carrying out described data.

36. the described Nonvolatile memory system of claim 32 is characterized in that,

Described access rate control part for transmission regulation unit data during, by change during this period with during the interval control access rate.

37. the described Nonvolatile memory system of claim 32 is characterized in that,

Described access device also has the encoding and decoding portion in order to the packed data that generates dynamic image data,

Described access rate control part decides access rate by the data rate that changes the packed data that is generated by described encoding and decoding portion.

38. the described Nonvolatile memory system of claim 37 is characterized in that,

Described access rate control part decides access rate by the bit rate that changes the packed data that is generated by described encoding and decoding portion.

39. the described Nonvolatile memory system of claim 37 is characterized in that,

Described access rate control part decides access rate by the frame rate that changes the packed data that is generated by described encoding and decoding portion.

40. one kind writes data to Nonvolatile memory devices and from the access device of described Nonvolatile memory devices sense data, possesses:

Demonstration is about the display part of the information of described access device; And

Demonstration is from the control part of the status information of the state of the described Nonvolatile memory devices of expression of described Nonvolatile memory devices notice.

41. one kind writes to Nonvolatile memory devices that data write and from the access device of described Nonvolatile memory devices sense data, possesses:

Cool off the cooling end of described Nonvolatile memory devices; And

Drive the control part of described cooling end based on status information from the state of the described Nonvolatile memory devices of expression of described Nonvolatile memory devices notice.

42. the described access device of claim 41 is characterized in that,

Described control part is preserved and limit under the upward dangerous temperature of described Nonvolatile memory devices use is that the 1st threshold temperature is the 2nd threshold temperature with the safe temperature that is lower than described the 1st threshold temperature, the temperature that will be described Nonvolatile memory devices from the described status information of described Nonvolatile memory devices notice compares with described the 1st threshold temperature and described the 2nd threshold temperature, when this temperature is higher than described the 1st threshold temperature, drive described cooling end, when this temperature is lower than described the 2nd threshold temperature, stop described cooling end.

43. the described access device of claim 41 is characterized in that,

Described control part is informed to expression and has surpassed described Nonvolatile memory devices and use and go up limit under the dangerous temperature promptly during the warning message of the 1st threshold temperature, and described cooling end is driven official hour.

44. the described access device of claim 41 is characterized in that,

Described control part is informed to the described access rate control information as status information, and when described access rate control information represents that access rate is low, described cooling end is driven official hour.

45. the described access device of claim 41 is characterized in that,

Described control part is preserved the threshold time relevant with the time of carrying out reading and writing data, is informed to the read-write permitted hours as described status information, and notified read-write permitted hours drives official hour with described cooling end when being shorter than described threshold time.

46. the described access device of claim 41 is characterized in that,

Described control part is preserved the threshold quantity relevant with the data volume of reading and writing, and is informed to the read-write permission amount as described status information, and notified read-write permission amount drives official hour with described cooling end during less than described threshold quantity.

47. one kind that be connected with Nonvolatile memory devices, described Nonvolatile memory devices is carried out the access device of reading and writing of data, possess:

Detect the temperature detecting part of the temperature of described Nonvolatile memory devices; And

The access rate control part, the temperature of the described Nonvolatile memory devices of measuring with temperature parameter of obtaining from described Nonvolatile memory devices and described temperature detecting part, calculate the temperature variation of the described Nonvolatile memory devices of following when carrying out data transmission by each set access rate of described access device, for described temperature variation, utilize the temperature of described Nonvolatile memory devices be no more than described Nonvolatile memory devices use go up under the dangerous temperature limit promptly the access rate of the 1st threshold temperature come described Nonvolatile memory devices is carried out access.

48. one kind that be connected with Nonvolatile memory devices, described Nonvolatile memory devices is carried out the access device of reading and writing of data, possess:

Detect the temperature detecting part of the temperature of described Nonvolatile memory devices;

The temperature rising back convergent temperature that preservation comprises the rate of rise in temperature of described Nonvolatile memory devices, described Nonvolatile memory devices is the temperature parameter preservation portion of the temperature parameter of saturation temperature; And

The access rate control part, the temperature of the described Nonvolatile memory devices that temperature parameter of preserving with described temperature parameter preservation portion and described temperature detecting part are measured, calculate the temperature variation of the described Nonvolatile memory devices of following when carrying out data transmission by each set access rate of described access device, for described temperature variation, utilize the temperature of described Nonvolatile memory devices be no more than described Nonvolatile memory devices use go up under the dangerous temperature limit promptly the access rate of the 1st threshold temperature come described Nonvolatile memory devices is carried out access.

49. the described access device of claim 47 is characterized in that,

The temperature parameter of obtaining from described Nonvolatile memory devices also comprises the temperature decline rate of the described Nonvolatile memory devices when not carrying out access,

The temperature of the described Nonvolatile memory devices that described access rate control part is measured with described temperature information and described temperature detecting part, according to for the set access rate of described access device, decide described continuously access time with regard to stopping data transmission in the temperature variation that the temperature of described Nonvolatile memory devices drops to the described Nonvolatile memory devices when becoming the temperature of restarting the benchmark that data transmission uses promptly the 2nd threshold temperature just restarting data transmission but reach described the 1st threshold temperature, but and described nonvolatile memory is carried out access based on the access time that is determined in the temperature of described Nonvolatile memory devices.

50. the described access device of claim 47 is characterized in that,

Described access rate control part is controlled access rate by changing in order to the clock frequency that writes or read of carrying out described data.

51. the described access device of claim 47 is characterized in that,

Described access rate control part for transmission regulation unit data during, by change during this period with during the interval control access rate.

52. the described access device of claim 47 is characterized in that,

The encoding and decoding portion that also has the packed data that generates dynamic image data,

Described access rate control part decides access rate by the data rate that changes the packed data that is generated by described encoding and decoding portion.

53. the described access device of claim 52 is characterized in that,

Described access rate control part decides access rate by the bit rate that changes the packed data that is generated by described encoding and decoding portion.

54. the described access device of claim 52 is characterized in that,

Described access rate control part decides access rate by the frame rate that changes the packed data that is generated by described encoding and decoding portion.

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