CN101572498A - Recycling multi-layer bridge rectification circuit for single crystal power supply - Google Patents
Recycling multi-layer bridge rectification circuit for single crystal power supply Download PDFInfo
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- CN101572498A CN101572498A CNA2009100595425A CN200910059542A CN101572498A CN 101572498 A CN101572498 A CN 101572498A CN A2009100595425 A CNA2009100595425 A CN A2009100595425A CN 200910059542 A CN200910059542 A CN 200910059542A CN 101572498 A CN101572498 A CN 101572498A
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Abstract
The invention discloses a recycling multi-layer bridge rectification circuit for single crystal power supply, comprising a recycling rectification circuit. One or more groups of taps are added between windings at the transformer secondary side of the recycling multi-layer rectification circuit; the output ends of each tap are respectively connected with one end of a controllable switching device; the other ends of all controllable switching devices are connected in parallel as an output end of an electrode; a star point outputs directly as the other output end of the electrode. By adopting the recycling structure and multi-layer bridge rectification manner, the invention has the advantages of high power factor, small harmonic current and energy efficiency.
Description
Technical field
The present invention relates to the monocrystalline silicon power supply, especially a kind of recycling multi-layer bridge rectification circuit that is used for single crystal power supply.
Background technology
Current single crystal growing furnace DC power supply of a great variety has rectifier power source, high frequency switch power etc.Mostly be 6 pulse wave rectifier power supplys and 12 pulse wave rectifier power supplys in the rectifier power source market now, wherein the use of 6 pulse wave rectifier power supplys is comparatively general, and 6 pulse wave rectifier power supplys adopt three-phase bridge rectification or double-reverse star rectification mode more.These two kinds of rectifier system contrasts, its characteristics of the power supply of two anti-star circuit are more suitable for the big current low voltage output of monocrystalline silicon production technological requirement, and its power factor and conversion efficiency are all than bridge rectifier mode height.
But in conjunction with the production technology of monocrystalline silicon, these two kinds of power supplys all have same defective.The complete growth course of monocrystalline silicon needs about 5 hours melt operation, output power of power supply has generally reached the 80%-95% of rated power this moment, in addition, also need the isometrical process about 30 hours, and output power of power supply is generally about 40% of rated power.At melt, isometrical these two processes, more than the specified output of two kinds of rectifier system power supplys be certain, when the power factor under the melt state, conversion efficiency all than higher, but under long-term isometrical state, its power factor, conversion efficiency are just little many, and harmonic pollution is bigger.How to make the monocrystalline silicon rectifier power source under melt and isometrical state, all keep higher power factor and conversion efficiency to become the problem that numerous manufacturers pay close attention to always.
The major loop of the three-phase bridge rectification in the rectifier power source generally adopts the three pillar type transformer at present, as shown in Figure 1.This scheme cost is lower, and producer adopts by part, but because the power of rectifying device own loss is big, lower by test its power factor of contrast and conversion efficiency, and have a certain amount of harmonic wave.The major loop of double-reverse star rectification generally adopts the pentastyle transformer, the primary side thyristor voltage regulation, and the secondary side diode rectification, as shown in Figure 2.This scheme cost is higher relatively, but its rectification effect output stability is all good than bridge rectifier mode, and its power factor and conversion efficiency be also than higher, and comparing with three-phase bridge rectification has the considerable energy saving effect.But in conjunction with the production technology of monocrystalline silicon, especially under long-term isometrical state, the power factor of these two kinds of power supplys, conversion efficiency are just little many, and harmonic pollution is bigger.
Summary of the invention
The purpose of this invention is to provide a power factor height, the recycling multi-layer bridge rectification circuit that is used for single crystal power supply that transfer power is high.
In order to achieve the above object, the present invention adopts following technical scheme: a kind of recycling multi-layer bridge rectification circuit that is used for single crystal power supply, comprise the double-reverse star rectification circuit, between the winding of the Circuit Fault on Secondary Transformer of double-reverse star rectification circuit, increase the tap more than 1 group or 1 group, the output of each tap is connected with an end of gate-controlled switch device respectively, the other end of all a gate-controlled switch devices output as electrode parallel with one another, asterism is directly exported another output as electrode.
Increase by 1 group of tap between the winding of the Circuit Fault on Secondary Transformer of described double-reverse star rectification circuit.
Increase by 2 groups of taps between the winding of the Circuit Fault on Secondary Transformer of described double-reverse star rectification circuit.
Described gate-controlled switch device is a thyristor.
The present invention is with the transformer centre tap, the highest output amplitude is divided into 2 (or a plurality of) utilizable levels, select suitable control, the available waveform of one deck is divided into 2 layers (or multilayers), output half-wave or all-wave waveform successively, and the rectified waveform of the adjacent high one deck that superposes on this basis, as far as possible working near the mode of complete all-wave output, the waveform of lamination and lamination not is relatively as Fig. 5.Lamination is the double-reverse star rectification circuit (as Fig. 3, Fig. 4) among the present invention, and lamination is not the rectification circuit (as Fig. 1, Fig. 2) in traditional rectifier power source.
When being given as 20%, only low layer thyristor groups (low pressure group thyristor) work of stack power supply, its angle of flow is big with identical given conventional power source, and this moment is less to the impact of electrical network; When being given as 50%, the basic conducting fully of low layer thyristor groups in the stack power supply (low pressure group thyristor), and the angle of flow of the identical output of conventional power source only has half, substantially be that the power of single crystal power supply when isometrical is exported this moment, by waveform as can be seen, the stack power supply waveform is level and smooth, is more suitable for the monocrystalline silicon production needs, and the power factor of this moment is high, and harmonic wave is also smaller; When being given as 80%, stack power supply only depends on low layer thyristor groups (low pressure group thyristor) work can not satisfy the output needs, so on the complete conducting basis of low layer thyristor groups (low pressure group thyristor), the advantage that conventional power source has high power factor and low harmonic wave is at this moment compared in high-rise thyristor (high pressure group thyristor) part conducting; 100% the time, two groups of power supplys do not have difference substantially in result of use and performance parameter when given.
In monocrystalline silicon production technology, production process includes melt and isometrical two important stages.
In the melt process, the high power high voltage need be provided, the whole conductings of low pressure group thyristor this moment, high pressure group thyristor is near full conducting, and output waveform is near all-wave, and its power factor is quite high, and harmonic current is very little.
In isometrical process, the low-power low-voltage need be provided, the centre tap voltage of transformer promptly is thought of as the operating voltage under the isometrical state.This moment, the low pressure group thyristor was near full conducting or full conducting, and high pressure group thyristor not conducting or conducting is very little, and output waveform is near all-wave, and its power factor is quite high, and harmonic current is very little.
Under melt and isometrical operating state, all can reach higher power factor like this, compare, improve power factor, reduce harmonic current, have very obvious energy-saving effect with conventional power source.
Lamination and the power factor of lamination not and comparison such as Fig. 6, shown in Figure 7 of harmonic current:
As seen from Figure 6, the power factor of stack power supply is compared with the individual layer conventional power source, and power factor is significantly increased, under the isometrical operating state of single crystal power supply, and 40-60KW power section, the lamination power factor is at 0.8-0.96, and conventional power source only is 0.53-0.62.Greatly reduce the energy consumption of single crystal power supply long-term work section, more energy-efficient.
As seen from Figure 7, do not having under the effect of harmonic wave control cabinet, the current harmonics of stack power supply is greatly improved than individual layer conventional power source, and is special under the isometrical state of single crystal power supply long-term work, current harmonics has reduced by 10%, has reduced the pollution to electrical network.Under power supply while working condition in enormous quantities, only need to concentrate a small amount of improvement can reduce harmonic wave more at distribution.
The invention has the beneficial effects as follows: the present invention uses this commutating circuit to have following effect: 1, power factor height owing to adopt two anti-star structures and multilayer bridge rectifier system; 2, harmonic current is little; 3, energy-efficient.
Description of drawings
The present invention will illustrate by example and with reference to the mode of accompanying drawing, wherein:
Fig. 1 is traditional three-phase bridge rectifier circuit figure;
Fig. 2 is traditional double-reverse star rectification circuit diagram;
Fig. 3 is a recycling multi-layer bridge rectification circuit circuit diagram of the present invention, for increasing by one group of tap form, simultaneously as embodiments of the invention 1;
Fig. 4 is embodiments of the invention 2, for increasing by two groups of tap forms;
Fig. 5 is a lamination and the waveform comparison diagram of lamination not;
Fig. 6 is a lamination and the power factor comparison diagram of lamination not;
Fig. 7 is a lamination and the harmonic current comparison diagram of lamination not.
Embodiment
Embodiment 1:
As shown in Figure 3: adopt two anti-star structures, the rectification of multilayer bridge, the present invention increases by 1 group of tap between the winding of the Circuit Fault on Secondary Transformer of double-reverse star rectification circuit, the output of each tap is connected with an end of gate-controlled switch device respectively, the other end of all a gate-controlled switch devices output as electrode parallel with one another, asterism is directly exported another output as electrode.In the present embodiment 1, the present invention increases by 1 group of centre tap between the Circuit Fault on Secondary Transformer winding of double-reverse star rectification circuit, and at thyristor of the output of each tap series connection, after the above-mentioned connection, the thyristor that connects in the tap of all transformer secondary outputs, its anode are connected in each tap, and their negative electrode is parallel with one another, back in parallel is for cloudy end is as positive electrode D1 output altogether, and asterism is directly exported as negative electrode D2.As shown in Figure 3: in the present invention, increase by 1 group of centre tap between the Circuit Fault on Secondary Transformer winding of double-reverse star rectification circuit and form the low pressure winding, on the low pressure winding, be in series with low pressure group thyristor (KP11 respectively, KP13, KP15, KP14, KP16, KP12), double-reverse star rectification circuit secondary side winding forms the high pressure winding, on the high pressure winding, be in series with high pressure group thyristor (KP21 respectively, KP23, KP25, KP24, KP26, KP22), the anode of low pressure group thyristor is connected on respectively on the low pressure winding, the anode of high pressure group thyristor is connected on respectively on the high pressure winding, for cloudy end is as positive electrode D1 output altogether, the asterism of double-reverse star rectification circuit is directly exported as negative electrode D2 after the negative electrode parallel connection of all low pressure group thyristors and high pressure group thyristor.Fig. 3 is in the monocrystalline silicon production technology, the recycling multi-layer bridge rectification circuit of one group of tap of transformer.Gate-controlled switch device among the embodiment 1 can be thyristor, also can use the suitable switching device that other can regulation voltage.
In monocrystalline silicon production technology, production process includes melt and isometrical two important stages.
In the melt process, the high power high voltage need be provided, all conductings of low pressure group thyristor this moment (KP11, KP13, KP15, KP14, KP16, KP12), high pressure group thyristor (KP21, KP23, KP25, KP24, KP26, KP22) is near full conducting, output waveform is near all-wave (as Fig. 5-left side-given ≈ 100%), its power factor is quite high, and harmonic current is very little.
In isometrical process, the low-power low-voltage need be provided, the centre tap voltage of transformer promptly is thought of as the operating voltage under the isometrical state.The thyristor (KP11, KP13, KP15, KP14, KP16, KP12) of low pressure group is near full conducting or full conducting at this moment, high pressure group thyristor (KP21, KP23, KP25, KP24, KP26, KP22) not conducting or conducting is very little, output waveform is near all-wave (as Fig. 5-left side-given ≈ 50%), its power factor is quite high, and harmonic current is very little.
Under melt and isometrical operating state, all can reach higher power factor like this, compare, improve power factor, reduce harmonic current, have very obvious energy-saving effect with conventional power source.
Embodiment 2:
As shown in Figure 4: adopt two anti-star structures, the rectification of multilayer bridge, the present invention increases by 2 groups of taps between the winding of the Circuit Fault on Secondary Transformer of double-reverse star rectification circuit, the output of each tap is connected with an end of gate-controlled switch device respectively, the other end of all a gate-controlled switch devices output as electrode parallel with one another, asterism is directly exported another output as electrode.
In the present embodiment 2, the present invention increases by 2 groups of centre taps between the Circuit Fault on Secondary Transformer winding of double-reverse star rectification circuit, thyristor of output series connection in each tap, after the above-mentioned connection, the thyristor that connects in the tap of all transformer secondary outputs, its anode are connected in each tap, and their negative electrode is parallel with one another, back in parallel is for cloudy end is as positive electrode D1 output altogether, and asterism is directly exported as negative electrode D2.As shown in Figure 4: in the present invention, increase by 2 groups of centre taps between the Circuit Fault on Secondary Transformer winding of double-reverse star rectification circuit and form 2 groups of low pressure windings, on 2 groups of low pressure windings, be in series with low pressure group thyristor (KPA1 respectively, KPB1, KPA3, KPB3, KPA5, KPB5, KPA4, KPB4, KPA6, KPB6, KPA2, KPB2), double-reverse star rectification circuit secondary side winding forms the high pressure winding, on the high pressure winding, be in series with high pressure group thyristor (KPC1 respectively, KPC3, KPC5, KPC4, KPC6, KPC2), the anode of low pressure group thyristor is connected on respectively on the corresponding low pressure winding, the anode of high pressure group thyristor is connected on respectively on the high pressure winding, for cloudy end is as positive electrode D1 output altogether, the asterism of double-reverse star rectification circuit is directly exported as negative electrode D2 after the negative electrode parallel connection of all low pressure group thyristors and high pressure group thyristor.Fig. 4 is in the monocrystalline silicon production technology, the recycling multi-layer bridge rectification circuit of 2 groups of taps of transformer.Gate-controlled switch device among the embodiment 2 can be thyristor, also can use the suitable switching device that other can regulation voltage.
Disclosed all features in this specification, or the step in disclosed all methods or the process except mutually exclusive feature and/or step, all can make up by any way.
Disclosed arbitrary feature in this specification (comprising any accessory claim, summary and accompanying drawing) is unless special narration all can be replaced by other equivalences or the alternative features with similar purpose.That is, unless special narration, each feature is an example in a series of equivalences or the similar characteristics.
The present invention is not limited to aforesaid embodiment.The present invention expands to any new feature or any new combination that discloses in this manual, and the arbitrary new method that discloses or step or any new combination of process.
Claims (4)
1, a kind of recycling multi-layer bridge rectification circuit that is used for single crystal power supply, comprise the double-reverse star rectification circuit, it is characterized in that: between the winding of the Circuit Fault on Secondary Transformer of double-reverse star rectification circuit, increase the tap more than 1 group or 1 group, the output of each tap is connected with an end of gate-controlled switch device respectively, the other end of all a gate-controlled switch devices output as electrode parallel with one another, asterism is directly exported another output as electrode.
2, the recycling multi-layer bridge rectification circuit that is used for single crystal power supply according to claim 1 is characterized in that: increase by 1 group of tap between the winding of the Circuit Fault on Secondary Transformer of described double-reverse star rectification circuit.
3, the recycling multi-layer bridge rectification circuit that is used for single crystal power supply according to claim 1 is characterized in that: increase by 2 groups of taps between the winding of the Circuit Fault on Secondary Transformer of described double-reverse star rectification circuit.
4, the recycling multi-layer bridge rectification circuit that is used for single crystal power supply according to claim 1 is characterized in that: described gate-controlled switch device is a thyristor.
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| CNA2009100595425A CN101572498A (en) | 2009-06-10 | 2009-06-10 | Recycling multi-layer bridge rectification circuit for single crystal power supply |
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| CNA2009100595425A CN101572498A (en) | 2009-06-10 | 2009-06-10 | Recycling multi-layer bridge rectification circuit for single crystal power supply |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102136356A (en) * | 2010-12-01 | 2011-07-27 | 四川英杰电气股份有限公司 | Three-phase five-column transformer |
| CN102315784A (en) * | 2010-06-29 | 2012-01-11 | 沈阳铝镁设计研究院有限公司 | Power supply device of graphitization furnace |
| CN102592795A (en) * | 2012-02-10 | 2012-07-18 | 苏州博远特种变压器有限公司 | Outlet structure of double inverse star rectifier transformer |
| CN103887997A (en) * | 2014-03-11 | 2014-06-25 | 龚秋声 | Five-stem double-six-phase semiwave controllable rectifying circuit |
| CN109378981A (en) * | 2018-10-24 | 2019-02-22 | 哈尔滨工业大学（威海） | Double anti-star-like rectifiers based on power electronics phase-shifting transformer |
-
2009
- 2009-06-10 CN CNA2009100595425A patent/CN101572498A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102315784A (en) * | 2010-06-29 | 2012-01-11 | 沈阳铝镁设计研究院有限公司 | Power supply device of graphitization furnace |
| CN102136356A (en) * | 2010-12-01 | 2011-07-27 | 四川英杰电气股份有限公司 | Three-phase five-column transformer |
| CN102592795A (en) * | 2012-02-10 | 2012-07-18 | 苏州博远特种变压器有限公司 | Outlet structure of double inverse star rectifier transformer |
| CN103887997A (en) * | 2014-03-11 | 2014-06-25 | 龚秋声 | Five-stem double-six-phase semiwave controllable rectifying circuit |
| CN109378981A (en) * | 2018-10-24 | 2019-02-22 | 哈尔滨工业大学（威海） | Double anti-star-like rectifiers based on power electronics phase-shifting transformer |
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Open date: 20091104 |