CN101567517B - Method for improving optical power stability of semiconductor laser - Google Patents
Method for improving optical power stability of semiconductor laser Download PDFInfo
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- CN101567517B CN101567517B CN200910026832XA CN200910026832A CN101567517B CN 101567517 B CN101567517 B CN 101567517B CN 200910026832X A CN200910026832X A CN 200910026832XA CN 200910026832 A CN200910026832 A CN 200910026832A CN 101567517 B CN101567517 B CN 101567517B
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- drying oven
- vacuum drying
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- laser
- heating
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 230000003287 optical effect Effects 0.000 title claims abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000007789 sealing Methods 0.000 claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 12
- 230000008569 process Effects 0.000 claims abstract description 5
- 238000001291 vacuum drying Methods 0.000 claims description 24
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 14
- 229910052753 mercury Inorganic materials 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 7
- 230000007306 turnover Effects 0.000 claims description 4
- 238000010926 purge Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000005086 pumping Methods 0.000 abstract 1
- 230000035882 stress Effects 0.000 description 4
- 238000012536 packaging technology Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000003019 stabilising effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000009658 destructive testing Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The invention belongs to manufacturing technology for semiconductor photoelectric devices, and relates to a method for improving the optical power stability of a semiconductor laser. The method is to roast and package laser components on a sealing machine, and comprises the following steps in turn: a, placing unpackaged laser components into a vacuum oven in the sealing machine; b, performing vacuum pumping on the vacuum oven and introducing dried nitrogen into the vacuum oven; c, repeating the step b for times; d, opening a heating switch of the vacuum oven, setting the heating temperature tobetween 100 and 110 DEG C and the heating time to between 12 and 18 hours, and maintaining the air pressure in the vacuum oven to less than 1 mmHg in the heating process; and e, introducing the dried nitrogen into the vacuum oven after the heating is over until the air pressure is 760 mmHg, transferring vacuum roasted laser components into a sealed operation box, and completing the process of sea ling the laser components. The method not only improves the optical power stability of the semiconductor laser but also shortens the vacuum roasting time and saves the cost.
Description
Technical field
The invention belongs to the manufacturing technology of semiconductor photoelectric device, relate to a kind of improvement of noise spectra of semiconductor lasers packaging technology, specifically is a kind of by improving the method that packaging technology improves optical power stability of semiconductor laser.
Background technology
The stability of luminous power is the basic demand of noise spectra of semiconductor lasers, in the world the moisture content in the black box also there is strict requirement, when guaranteeing the laser optical power stability, guarantee that the interior moisture content of black box is lower than 5000ppm and just becomes one of difficult point of semiconductor packaging simultaneously again.
The factor that influences light power stabilising in the packaging technology of laser mainly contains aspect following three:
1, in the process of assembling, welding, there is stress at inner each material of the encapsulation of laser, if there be the asymmetric of stress, increase along with the time, the release of stress will bring displacement, thereby caused the laser coupling efficiency to change, after this variation surpassed the scope of a permission, laser had just lost efficacy.This inefficacy generally baking back of the normal pressure before capping just can find, thereby and can be before capping the capable reparation of contraposition shift-in reach reparation to luminous power.
2, the vacuum bakeout temperature before the sealing cap is lower than 90 degrees centigrade, if stoving time is incomplete less than the steam desorption that can cause laser assembly inside in 48 hours.Moisture content inner after the general capping of such Laser Devices generally all will not satisfy the control criterion of international standard to the device inside moisture content above 5000ppm on the one hand, if this product is pumped to censorship, moisture content is tested defective; On the other hand, if this is not pumped to the destructive testing of doing moisture content, but laser works in the atmosphere of high moisture content from now on for a long time, quickened the aging of chip of laser, also will influence the optical power stability of laser, and then shorten the life-span of Laser Devices.
When 3, the vacuum bakeout temperature before the sealing cap is too high, when the difference of employed minimum solder temperature and baking temperature is less than 30 degrees centigrade in laser is assembled, scolder will have softening phenomenon during vacuum bakeout, and temperature difference is more little, and scolder is softening serious more.Owing to have certain micropore bubble in the scolder that laser bonds between parts when assembling, bubble is heated and can expands when toast laser capping initial vacuum, and extraneous gas has been evacuated, at this moment the outer just aggravation of pressure difference of the pressure of bubble and scolder in the scolder, this moment, in a single day softening appearred in scolder, and scolder just can little distortion take place because of the crunch difference of bubble, has caused the laser coupling efficiency to change, after this variation surpassed the scope of a permission, laser had just lost efficacy.
Summary of the invention
Technical problem to be solved by this invention is, overcome the baking of Laser Devices sealing cap initial vacuum and both needed high temperature removal steam, need to satisfy the contradiction that deformation can not take place baking front and back scolder again, seek suitable baking temperature, stoving time and baking procedure, a kind of method that improves optical power stability of semiconductor laser is provided.
The method of raising optical power stability of semiconductor laser of the present invention is, on cap sealing machine laser assembly toasted and encapsulates, and passes through following steps successively,
A. the laser assembly that will not encapsulate is put into the vacuum drying oven that cap sealing machine carries, and closes cap sealing machine turnover bin gate;
B. vacuum drying oven is evacuated to the vacuum drying oven internal gas pressure less than 1 millimetres of mercury, charges into drying nitrogen to vacuum drying oven internal gas pressure and be not less than 760 millimetress of mercury;
C. repeating step b several times;
D. open the heater switch of vacuum drying oven, setting heating-up temperature is 100～110 ℃, and be 12～18 hours heating time, keeps the vacuum drying oven internal gas pressure less than 1 millimetres of mercury in heating process;
E. charging into drying nitrogen to air pressure after heating is finished in vacuum drying oven is 760 millimetress of mercury, open the seal operation case of cap sealing machine and the hermatic door between the vacuum drying oven then, the laser assembly that vacuum bakeout is crossed is transferred to and is passed through continuously towards nitrogen purge and dry seal operation case is finished the capping process to laser assembly.
The present invention is complete in the Stress Release of bringing of encapsulation process with laser assembly, and steam absorption is reduced to acceptable degree, has both improved the stability of semiconductor laser luminous power, has shortened the vacuum bakeout time simultaneously, provides cost savings.Through the reality test, the inventive method is compared with traditional handicraft, the Laser Devices light power stabilising that is obtained, and product percent of pass is brought up to more than 98% by about 80% after the capping; Satisfying under the condition that moisture content requires, the time of baking dehumidifying is minimum has only 12 hours, and the production cycle shortens greatly.
Description of drawings
Fig. 1 is the structural representation of the employed cap sealing machine of the inventive method.
Wherein: 1-cap sealing machine turnover bin gate; The 2-vacuum drying oven; The 3-hermatic door; 4-seal operation case.
Embodiment
Method of the present invention can realize on the cap sealing machine of routine that the concrete steps of embodiment are as follows:
1. open cap sealing machine turnover bin gate 1 laser assembly is put into the vacuum drying oven 2 that cap sealing machine carries;
2. cap sealing machine being passed in and out bin gate 1 closes;
3. vacuum drying oven 2 being evacuated to the baking oven internal gas pressure is 0.5 millimetres of mercury;
4. to charge into drying nitrogen to baking oven internal gas pressure be 760 millimetress of mercury to finishing the vacuum drying oven 2 that vacuumizes;
5. vacuum drying oven 2 being evacuated to the baking oven internal gas pressure is 0.5 millimetres of mercury;
6. charging into drying nitrogen to baking oven internal gas pressure to vacuum drying oven 2 is 760 millimetress of mercury;
7. open the heater switch of vacuum drying oven 2, the temperature of setting heating is 105 degrees centigrade, and be 16 hours heating time;
8. carry out step 7. in, keep vacuum drying oven 2 internal gas pressures less than 1 millimetres of mercury;
9. charging into drying nitrogen to air pressure is 760 millimetress of mercury, opens the hermatic door 3 of cap sealing machine inside then, and the assembly that vacuum bakeout is crossed is transferred to and passed through continuously towards nitrogen purge and dry cap sealing machine seal operation case 4 is finished the capping program to assembly.
Claims (1)
1. method that improves optical power stability of semiconductor laser is characterized in that: on cap sealing machine, laser assembly toasted and encapsulates, pass through following steps successively,
A. the laser assembly that will not encapsulate is put into the vacuum drying oven that cap sealing machine carries, and closes cap sealing machine turnover bin gate;
B. vacuum drying oven is evacuated to the vacuum drying oven internal gas pressure less than 1 millimetres of mercury, charges into drying nitrogen to vacuum drying oven internal gas pressure and be not less than 760 millimetress of mercury;
C. repeating step b several times;
D. open the heater switch of vacuum drying oven, setting heating-up temperature is 100～110 ℃, and be 12～18 hours heating time, keeps the vacuum drying oven internal gas pressure less than 1 millimetres of mercury in heating process;
E. charging into drying nitrogen to air pressure after heating is finished in vacuum drying oven is 760 millimetress of mercury, open the seal operation case of cap sealing machine and the hermatic door between the vacuum drying oven then, the laser assembly that vacuum bakeout is crossed is transferred to and is passed through continuously towards nitrogen purge and dry seal operation case is finished the capping process to laser assembly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910026832XA CN101567517B (en) | 2009-06-02 | 2009-06-02 | Method for improving optical power stability of semiconductor laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910026832XA CN101567517B (en) | 2009-06-02 | 2009-06-02 | Method for improving optical power stability of semiconductor laser |
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| Publication Number | Publication Date |
|---|---|
| CN101567517A CN101567517A (en) | 2009-10-28 |
| CN101567517B true CN101567517B (en) | 2010-11-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200910026832XA Active CN101567517B (en) | 2009-06-02 | 2009-06-02 | Method for improving optical power stability of semiconductor laser |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11119384B2 (en) * | 2017-09-28 | 2021-09-14 | Kla-Tencor Corporation | Hermetic sealing of a nonlinear crystal for use in a laser system |
| CN110164802A (en) * | 2019-06-21 | 2019-08-23 | 湘潭市锦程半导体科技有限公司 | A kind of triode packaging system based on embedded Control |
| CN114740925B (en) * | 2022-04-20 | 2024-03-15 | 中国电子科技集团公司第三十八研究所 | Off-line control method for internal water vapor of electronic device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5799029A (en) * | 1996-05-14 | 1998-08-25 | Sdl, Inc. | Laser system with reduced power fluctuations for employment in applications requiring continuous stable light intensity delivery |
| CN101191975A (en) * | 2006-11-27 | 2008-06-04 | Jds尤尼弗思公司 | Harmonic frequency conversion module |
-
2009
- 2009-06-02 CN CN200910026832XA patent/CN101567517B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5799029A (en) * | 1996-05-14 | 1998-08-25 | Sdl, Inc. | Laser system with reduced power fluctuations for employment in applications requiring continuous stable light intensity delivery |
| CN101191975A (en) * | 2006-11-27 | 2008-06-04 | Jds尤尼弗思公司 | Harmonic frequency conversion module |
Non-Patent Citations (1)
| Title |
|---|
| 杨九如等.基于Fuzzy-P控制的半导体激光器功率稳定研究.光子学报.2006,35(6),全文. * |
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| CN101567517A (en) | 2009-10-28 |
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Denomination of invention: Method for improving optical power stability of semiconductor laser Effective date of registration: 20150505 Granted publication date: 20101117 Pledgee: Zhenjiang Jiangsu rural commercial bank Limited by Share Ltd. Dantu branch Pledgor: JIANGSU FIBER GRID Co.,Ltd. Registration number: 2015980000112 |
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Date of cancellation: 20200430 Granted publication date: 20101117 Pledgee: Zhenjiang Jiangsu rural commercial bank Limited by Share Ltd. Dantu branch Pledgor: JIANGSU FIBER GRID Co.,Ltd. Registration number: 2015980000112 |
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Denomination of invention: Method for improving optical power stability of semiconductor laser Effective date of registration: 20200526 Granted publication date: 20101117 Pledgee: Jiangsu Zhenjiang Rural Commercial Bank Co.,Ltd. Pledgor: JIANGSU FIBER GRID Co.,Ltd. Registration number: Y2020980002507 |
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Address after: 212009 Zhenjiang province Jiangsu city Zhenjiang district four South Dingmao Road No. 36 Patentee after: JIANGSU FIBER GRID Co.,Ltd. Address before: No. 1 Jinyang road 212000 in Zhenjiang province Jiangsu City Jingkou Development Zone Patentee before: JIANGSU FIBER GRID Co.,Ltd. |
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Denomination of invention: Method for improving optical power stability of semiconductor laser Effective date of registration: 20220815 Granted publication date: 20101117 Pledgee: Zhenjiang Jiangsu rural commercial bank Limited by Share Ltd. Dantu branch Pledgor: JIANGSU FIBER GRID Co.,Ltd. Registration number: Y2022980012548 |
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