CN101566721B - Deep ultraviolet projection photoetching objective lens - Google Patents
Deep ultraviolet projection photoetching objective lens Download PDFInfo
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- CN101566721B CN101566721B CN2009100093698A CN200910009369A CN101566721B CN 101566721 B CN101566721 B CN 101566721B CN 2009100093698 A CN2009100093698 A CN 2009100093698A CN 200910009369 A CN200910009369 A CN 200910009369A CN 101566721 B CN101566721 B CN 101566721B
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Abstract
The deep ultraviolet projection photoetching objective lens comprises an outer constant temperature sealing outer sleeve, an intermediate layer and an inner layer structure, wherein the intermediate layer is a lens cone and is formed by connecting a first lens cone and a second lens cone through a connecting piece, the inner layer is composed of ten optical lens elements and ten lens frame assemblies for separating and fixing the optical lens elements, an optical system composed of the ten optical lens elements is a double telecentric system, a resolution enhancement assembly is arranged between the ten optical lens elements of the inner layer and divides the ten optical lens elements into a front group of objective lenses and a rear group of objective lenses, the front group of objective lenses is composed of first to fourth lenses, the rear group of objective lenses is composed of fifth to tenth lenses, and a diaphragm of the resolution enhancement assembly is not only an image focal plane of the front group of objective lenses, but also an object focal plane of the rear group of objective lenses and also is a pupil plane of the optical system. The invention has the resolution enhancement capability, overcomes the defect that the photoetching resolution of the prior projection photoetching objective can only realize the traditional optical limit resolution, and has the characteristics of simple structure, low cost, large optical reduction magnification and great reduction of difficulty in manufacturing the superfine mask, so that the invention can manufacture superfine patterns with higher resolution.
Description
Affiliated technical field
The present invention relates to a kind of deep UV projection photoetching objective lens, belong to projection lithography device high resolution light projection photoetching objective lens technical field.
Background technology
The projection lithography device is a kind of and important equipment in the key equipment of large scale integrated circuit manufacturing process.Light projection photoetching objective lens is again the core component of projection lithography device.Domestic lithographic objective operation wavelength all is 436 nanometers, 365 nanometers, 248 nanometers and 193 nanometers etc. at present, and numerical aperture is also all not really high, and best result distinguishes that power is the 0.15-0.5 micron.Because resolving power is low, can not make the high resolution figure, can not satisfy the demand of large scale integrated circuit manufacturing and research.Deep UV projection photoetching objective lens is a core component of making the projection lithography device of superfine graph.Have Japanese Nikon (Nikon) now, add farming (Canon), Zeiss, Germany (Zeiss), the U.S. Chu Pu disclosed deep ultraviolet of company (193 nanometer) light projection photoetching objective lens such as (Tropel), numerical aperture is all more than or equal to 0.50-0.60, and resolving power is also very high; But these objective lens arrangement complexity cost an arm and a leg, and general unit all can't make, and also cannot afford, and simultaneously because the optics reduction magnification is little, make relatively difficulty of ultra tiny mask.In present existing light projection photoetching objective lens, do not add dim light yet, the position is complementary and various novel resolving power intensifiers such as polarization stack, only has the traditional optical ultimate resolution.
Summary of the invention
Technology of the present invention is dealt with problems: overcome the deficiencies in the prior art, provide a kind of photolithography resolution higher, optical element quantity is few, and is simple in structure, and mask manufacture is easy, has the deep UV projection photoetching objective lens of resolution enhance technology.
Technical solution of the present invention: deep UV projection photoetching objective lens, comprise outer field constant temperature hermetically sealed case, middle layer and endothecium structure, the middle layer is a lens barrel, be formed by connecting with web member by first lens barrel and second lens barrel, internal layer is for separating ten lens frame assemblies of fixed optics lens element, and ten optical lens components and resolving power strengthen assembly and form, the optical system of ten optical lens components compositions is two telecentric systems, 20 times of optical system reduction magnification, numerical aperture NA=0.62, resolving power strengthens assembly ten optical lens components is divided into the two groups of object lens in front and back, preceding group object lens are made up of first to fourth lens, back group object lens by the 5th to the tenth lens totally six lens forms, the light hurdle face that resolving power strengthens assembly be before picture side's focal plane of group object lens, also be the object space focal plane that object lens are organized in the back, also be the pupil plane of optical system simultaneously, resolving power strengthens assembly has humidification to resolution, and the contrast of litho pattern is increased, and improves photolithography resolution.
The reinforcement plate that described resolving power strengthens assembly is the dim light reinforcement plate, being manufactured with the length of side in the above is the square dim light layer of b, length of side direction and litho pattern line orientations are consistent during installation, to 193nm light dim light 40-60%, the span 0.4r of b is to 0.6r, and wherein r is the logical light radius of reinforcement plate, can be reduced to 0 grade of light of image pattern, strengthen the contrast of litho pattern, improve photolithography resolution.
The reinforcement plate of described resolving power reinforcement plate assembly is a position phase reinforcement plate, the position that the plane makes on the dim light layer that position phase reinforcement plate is made by quartz base plate and quartz base plate lower plane and the quartz base plate layer is formed mutually, the dim light layer is the square dim light layer of one two step, and the outer square length of side is c
1, c
1Span 0.4 to 0.55r
1, the interior square length of side is c
2, c
2Span be 0.2r
1To 0.4r
1, r wherein
1Be the logical light radius of position phase reinforcement plate, less than interior square area from outer square to 193nm light dim light to zone the interior square.The position is the complete printing opacity of layer mutually, form by 16x16-64x64 array of small squares figure, position phase value is 0, π/4, pi/2, four values of π, it is made at the different distributions of different mask lines and some hole pattern, owing to placed the position reinforcement plate mutually with dim light and phase compensation, reduces under few situation at imaging, strengthen the contrast of litho pattern, improved the photolithography resolution of Micropicture.
The reinforcement plate that described resolving power strengthens assembly is the polarization reinforcement plate, the S polarization direction is consistent, it and be parallel to a certain length of side of lower surface square dim light layer, the line orientations that also is parallel to litho pattern, before lithographic objective, organize the light of penetrating, behind the polarization layer by reinforcement plate, the polarized light of outgoing below the reinforcement plate polarization layer, the S polarization is by the top said S polarized light that is parallel to the square a certain length of side entirely, this single polarized light is again by organizing behind the lithographic objective, image on the silicon chip, the imaging polarized light is symmetry on the both direction of figure, plays stack mutually.The polarization reinforcement plate matches mutually therewith, and the dim light layer of doing at the quartz base plate lower plane is that a square dim light layer by two steps is formed, and the outer square length of side is d
1, d
1Span is 0.3r
2To 0.5r
2, the interior square length of side is d
2, d
2Span is 0.1r
2To 0.3r
2, r wherein
2Be the logical light radius of polarization reinforcement plate, less than interior square area from outer square to 193nm light dim light to zone the interior square.Owing to have the polarization reinforcement plate of dim light and polarization characteristic, allow the light that can superpose mutually in the imaging pass through, the light that plays negative function does not pass through, and has significantly strengthened the contrast of litho pattern, improves the photolithography resolution of Micropicture.
The reinforcement plate that described resolving power strengthens assembly is another polarization reinforcement plate, the S polarization direction be be that starting point is perpendicular along diametric(al) radiation ray by the center of circle, in this polarization layer, be that the center of circle is directly through being that the disc of 5mm is not made polarization layer with the plate center.Before lithographic objective, organize the light of penetrating, behind the polarization layer by reinforcement plate, the polarized light of outgoing below the reinforcement plate polarization layer, S polarization are by recited above perpendicular with the radioactive ray that are starting point entirely by the center of circle, and this imaging polarized light also is to be symmetry stack mutually with the center.The radial pattern polarization layer matches mutually therewith, does to be made up of the circular dim light layer of two steps at the dim light layer of quartz base plate lower plane, and the outer ring diameter is ф e
1,, ф e
1Span is 0.3r
3To 0.5r
3, the internal layer round diameter is ф e
2, ф e
2Span is 0.1r
3To 0.3r
3, r wherein
3Be the logical light radius of polarization reinforcement plate, less than interior circle zone from outer ring to 193nm light dim light to zone the interior circle.Owing to have the polarization reinforcement plate of dim light and polarization characteristic, allow the light that can superpose mutually in the imaging pass through, the light that plays negative function does not pass through, and has significantly strengthened the contrast of litho pattern, improves the photolithography resolution of Micropicture.
The present invention compared with prior art has the following advantages:
(1) numerical aperture of light projection photoetching objective lens big (NA=0.62), operating wave length ((=193 nanometer), optimal transfer function MTF=0.43; At 2500 pairs of lines per millimeters, during out of focus ± 0.2 micron, transport function MTF 〉=0.38.Because numerical aperture of objective is big, has improved photolithography resolution, the thinnest photolithography resolution reaches 0.15 micron.
(2) the present invention only constitutes (10 lens and reinforcement plate) by 11 optical elements, and the optical element number is few, none gummed part again, so objective lens arrangement is very simple, has simplified the object lens making, has also reduced cost of manufacture, has improved the object lens quality simultaneously.
(3) under short wavelength, guaranteed that the optical system that optical element is formed is the two telecentric systems as Fang Yuanxin, the object space heart far away.Owing to be two telecentric systems,, can not change the projection lithography multiplying power even therefore mask graph and silicon chip depart from and tilt yet.
(4) the object lens reduction magnification reaches 20 times, and is bigger 3 times than 5 times of multiplying powers of common product, therefore reduced the difficulty of ultra tiny mask manufacture, and this has just reduced the cost of making integrated circuit, is applicable to integrated circuit (IC)-components research and short run making production.
(5) when the big wavelength of numerical aperture of object lens is short, at the pupil plane of object lens dim light, position be complementary compensation and various forms of resolving power intensifiers such as polarization stack have been installed, make it under the original very high situation of resolving power, imaging resolving power and depth of focus are got a greater increase and improve, reach 0.11 micron of the thinnest photolithography resolution.
Description of drawings
Fig. 1 is the optics and the mechanical scantling plan of the embodiment of the invention 1;
Fig. 2 is the out of focus transport function MTF curve map of the embodiment of the invention 1;
Fig. 3 is the distortion curve figure of the embodiment of the invention 1;
Fig. 4 is the enhancing assembly dim light reinforcement plate structural representation of the embodiment of the invention 1;
Fig. 5 is the optics and the mechanical scantling plan of the embodiment of the invention 2;
Fig. 6 is the structural drawing that the resolving power of the embodiment of the invention 2 strengthens assembly position phase reinforcement plate;
Fig. 7 increases phase reinforcement plate array of small squares position, the strong assembly of resolving power position layer structural representation mutually for the embodiment of the invention 2;
Fig. 8 is the optics and the mechanical scantling plan of the embodiment of the invention 3;
Fig. 9 is the structural drawing that the resolving power of the embodiment of the invention 3 strengthens assembly polarization reinforcement plate;
Figure 10 is the polarization layer structural representation that the resolving power of the embodiment of the invention 3 strengthens assembly polarization reinforcement plate;
Figure 11 is another structural drawing that the resolving power of the embodiment of the invention 3 strengthens assembly polarization reinforcement plate polarization layer structure.
Embodiment
As shown in Figure 1, the embodiment of the invention 1 comprises constant temperature overcoat 8, middle layer, optical lens components and lens frame assembly three-decker.The constant temperature overcoat 8 that is connected with the clean recirculated water of exact constant temperature is the skin of deep UV projection photoetching objective lens.Constant temperature overcoat 8 sealing shrouds are contained in the lens barrel outside.Constant temperature overcoat 8 makes lens barrel and optical lens picture frame assembly constant temperature, and interior optical lens components of lens barrel and the clearance space between the element and ambient atmosphere are separated.
The middle layer is a lens barrel, it is formed by connecting by first lens barrel 6 and second lens barrel, 10 usefulness web members, be equipped with in first lens barrel 6 and strengthen assembly 7, inwall has step surface parallel to each other, to support object lens inner-layer lenses frame assembly 2, lens frame assembly 3, lens frame assembly 4 and lens frame assembly 5, there is high precision to separate and all optical lens components of support object lens inside and the flange of lens frame assembly thereof on second lens barrel 10, inwall also has step surface parallel to each other, to support all the other lens frame assemblies of object lens internal layer.
Internal layer is to be enclosed in 10 optical elements in the lens barrel of middle layer and the lens frame assembly and the resolving power of 10 supporting optical components strengthens assembly 7.From mask 29 1 sides, be fixing trim ring 1 successively, first lens 28 and the first lens frame assembly 2, second lens 27 and the second lens frame assembly 3, the 3rd lens 26 and the 3rd lens frame assembly 4, the 4th lens 25 and the 4th lens frame assembly 5, resolving power strengthens the dim light reinforcement plate 24 of assembly 7, the 5th lens 22 and the 5th lens frame assembly 9, the 6th lens 21 and the 6th lens frame assembly 11, the 7th lens 20 and the 7th lens frame assembly 12, the 8th lens 19 and the 8th lens frame assembly 13, the 9th lens 18 and the 9th lens frame assembly 14, the tenth lens 17 and the tenth lens frame assembly 15.11 optical elements that these object lens comprise (the dim light reinforcement plates 24 of 10 and one resolving power enhancing assemblies 7), none glues together part.Wherein, first lens 28 are the protruding curved month type negative lens in preceding recessed back; Second lens 27 are lordosis recurve curved month type negative lens; The 3rd lens 26 are lordosis recurve positive lens; The 4th lens 25 are double-concave negative lens; The 5th lens 22 are the protruding curved month type negative lens in preceding recessed back; The 6th lens 21 are the biconvex positive lens; The 7th lens 20 are the biconvex positive lens; The 8th lens 19 are lordosis recurve curved month type negative lens; The 9th lens 18 are lordosis recurve curved month type negative lens; The tenth lens 17 are lordosis recurve positive lens.
More than the optical system formed of 11 optical lens components be two telecentric systems of picture Fang Yuanxin, the object space heart far away, guarantee that departing from inclination of mask graph and silicon chip can not change the projection lithography multiplying power yet.Resolving power strengthens assembly 70 optical lens components is divided into two groups of front and back, before the group object lens by first lens 28, second lens 27, the 3rd lens 26, the 4th lens 25 and dim light reinforcement plate 24 totally five elements forms, the back organize object lens by the 5th lens 22, the 6th lens 21, the 7th lens 20, the 8th lens 19, the 9th lens 18, the tenth lens 17 totally six elements form; Strengthen the lower surface of dim light reinforcement plate 24 in the assembly 7, promptly light hurdle face 23 is picture side's focal plane of preceding group object lens, also is the object space focal plane of back group object lens, also is the pupil plane of optical system simultaneously.Mask graph on the mask face 29, by the reduced 20.2 times of projection imagings of light projection photoetching objective lens on image planes (silicon chip face) 16.Because numerical aperture of objective is big, NA=0.62 makes the thinnest photolithography resolution reach 0.15 micron.
As shown in Figure 2, be the transport function MTF curve of the embodiment of the invention 1.At 2500 pairs of lines per millimeters, during out of focus ± 0.2 micrometer range, transport function MTF 〉=0.38.Horizontal ordinate represents that (the per unit scale: micron), ordinate is represented transport function mtf value (per unit scale: 0.1) to defocusing amount among the figure.MTF curve when curve 30 and 31 is represented 0.0 millimeter of image height respectively on meridian and the sagitta of arc direction, MTF curve when curve 32 and 33 is represented 1.0 millimeters of image heights respectively on meridian and the sagitta of arc direction, MTF curve when curve 34 and 35 is represented 2.0 millimeters of image heights respectively on meridian and the sagitta of arc direction, MTF curve when the MTF curve when curve 36 and 37 is represented 3.0 millimeters of image heights respectively on meridian and the sagitta of arc direction, curve 38 and 39 are represented 5.0 millimeters of image heights respectively on meridian and the sagitta of arc direction.
As shown in Figure 3, the distortion curve 40,41 and 42 of the embodiment of the invention 1 when 192.5nm, 193nm and 193.5nm wavelength, these curves show that full visual field maximum distortion value is less than 5/10000ths.Among the figure, horizontal ordinate is represented the relative value that distorts, and the per unit scale is 0.00005, and ordinate is represented the normalizing visual field, and the per unit scale is 0.1.
As shown in table 1, be deep UV projection photoetching objective lens embodiment 1 optical system primary structure data.Listed in the table material from first lens, 28 to the tenth lens 17 and reinforcement plate 24, refractive index, each radius-of-curvature, thickness, at interval, logical light diameter and focal length data.
Table 1: the embodiment of the invention 1, embodiment 2, embodiment 3 optical system structure data
As shown in Figure 4, strengthen the structural representation of assembly dim light reinforcement plate 24 for the embodiment of the invention 1 resolving power.Resolving power strengthens the lower surface of dim light reinforcement plate 24 in the assembly 7, be that light hurdle face 23 also is the pupil plane of optical system, being manufactured with the length of side in the above is the square dim light layer 43 of b, and length of side direction and litho pattern line orientations are consistent during installation, to 193nm light dim light 50%, b=0.5r, wherein r is the logical light radius of reinforcement plate, and dim light reinforcement plate 24 can be reduced to 0 grade of light of image pattern, strengthens the contrast of litho pattern, improve photolithography resolution, make it be better than 0.15 micron.
As shown in Figure 5, be the optics and the mechanical scantling plan of the embodiment of the invention 2.It comprises 11 optical elements (contain resolving power and strengthen assembly) of constant temperature overcoat 8, middle layer, optical lens components and lens frame assembly three-decker similarly to Example 1, the middle layer is similarly lens barrel, it is formed by connecting by first lens barrel 44 and second lens barrel, 10 usefulness web members, make to have guide rail in first lens barrel 44 with the lens barrel axis normal, be equipped with on the guide rail and comprise a phase reinforcement plate 45, inwall has step surface parallel to each other equally, to support object lens internal layer one to four each lens frame assembly, support all the other lens frame assemblies of object lens internal layer in second lens barrel 10 too.
The optical system that 11 optical elements of this embodiment 2 are formed is similarly two telecentric systems.It is the position plate of enhancing group mutually 45 that resolving power strengthens assembly, it also is divided into optical system two groups of front and back, and the lower surface 23 (being light hurdle face) of the position plate of enhancing group mutually 45 is picture side's focal plane of preceding group object lens equally, also being the object space focal plane of back group object lens, also is the pupil plane of optical system simultaneously.Mask graph on the mask face 29, by the reduced 20.2 times of projection imagings of light projection photoetching objective lens on image planes (silicon chip face) 16.Embodiment 2 and embodiment 1 do not become because of the geometric parameter of element, and its transport function all keeps identical with embodiment 1 with distortion curve.
As shown in Figure 6, strengthen the structural representation of the position phase reinforcement plate 45 in the assembly for the embodiment of the invention 2 resolving powers.The position that the plane makes on the dim light layer 47 that position phase reinforcement plate 45 is made by quartz base plate 46 and quartz base plate lower plane and the quartz base plate layers 48 is formed mutually, dim light layer 47 can be made of film plating process, it is the square dim light layer of one two step, and the outer square length of side is c
1, c
1=0.5r
1, the interior square length of side is c
2, c
2=0.3r
1, r wherein
1Be the logical light radius of position phase reinforcement plate, from outer square to the interior square zone to 193nm light dim light 30%, interior square area dim light 80%.Position layer 48 mutually is positioned at a upper surface of phase reinforcement plate 46, its complete printing opacity, position mutually layer 48 is made up of 32x32 array of small squares figure 49, as shown in Figure 7, position phase value is 0, π/4, pi/2, four values of π, corresponding color are served as reasons black in white, and it is made at the different distributions of different mask lines and some hole pattern.This deep UV projection photoetching objective lens embodiment 2 owing to placed the position reinforcement plate 45 mutually with dim light and phase compensation, has strengthened the contrast of litho pattern, the photolithography resolution of raising Micropicture, and the thinnest photolithography resolution reaches 0.12 micron.
As shown in Figure 8, optics and mechanical general construction synoptic diagram for the embodiment of the invention 3, it is identical with embodiment 2, comprise constant temperature overcoat 8, the middle layer, internal layer is 11 optical elements of optical lens components and lens frame assembly three-decker, the middle layer is similarly lens barrel, it is formed by connecting by first lens barrel 44 and second lens barrel, 10 usefulness web members, be manufactured with guide rail in first lens barrel 44 with the lens barrel axis normal, be equipped with on the guide rail and comprise polarization reinforcement plate 50, inwall has step surface parallel to each other equally, to support object lens internal layer one to four each lens frame assembly, support all the other lens frame assemblies of object lens internal layer in second lens barrel 10 too.
The optical system that 11 optical elements of this embodiment 3 are formed is similarly two telecentric systems.Polarization reinforcement plate 50 also is divided into optical system two groups of front and back, and the lower surface 23 of polarization reinforcement plate 50 is picture side's focal plane of preceding group object lens equally, also is the object space focal plane of back group object lens, and the while also is the pupil plane of optical system.Mask graph on the mask face 29, by the light projection photoetching objective lens projection imaging on image planes 16.Embodiment 3 does not change equally because of the geometric parameter of element, and its transport function all keeps identical with embodiment 2 with embodiment 1 with distortion curve.
As shown in Figure 9, be the structural representation of the embodiment of the invention 3 polarization reinforcement plates 50.Plane polarization layer 53 is formed on dim light layer 52 that polarization reinforcement plate 50 is made by quartz base plate 51, quartz base plate lower plane and the quartz base plate, and dim light layer 52 is that a square dim light layer by two steps is formed, and with the film plating process making, the outer square length of side is d
1, d
1=0.4r
2, the interior square length of side is d
2, d
2=0.2r
2, r wherein
2Be the logical light radius of polarization reinforcement plate, from outer square to the interior square zone to 193nm light dim light 30%, interior square area dim light 75%.Plane polarization layer 53 is the polarization layers that the polarization direction had requirement on the reinforcement plate.
As shown in figure 10, polarization layer 53 structural representations for the embodiment of the invention 3 polarization reinforcement plates, the polarization direction of polarization layer 53 (S direction) is consistent, and be parallel to the foursquare a certain length of side, the line orientations that also is parallel to litho pattern, before lithographic objective, organize the light of penetrating, behind the polarization layer 53 by reinforcement plate, the polarized light of outgoing below reinforcement plate polarization layer 53, polarization S is for to be made of the S polarized light that is parallel to the square a certain length of side recited above, this single polarized light is organized after by lithographic objective, images on the silicon chip, and the imaging polarized light is that symmetry plays a part to superpose with the both direction.
As shown in figure 11, structural representation for the embodiment of the invention 3 reinforcement plate polarization layers 55 polarization directions, its S polarization direction be be that starting point is perpendicular along diametric(al) radiation ray by the center of circle, to this polarization layer, be that the center of circle is directly through being that the disc of 5mm is not made polarization layer with the plate center.Before lithographic objective, organize the light of penetrating, behind the polarization layer 55 by reinforcement plate, the polarized light of outgoing below reinforcement plate polarization layer 55, S polarization are by recited above perpendicular with the radioactive ray that are starting point entirely by the center of circle, and this imaging polarized light also is to be symmetry stack mutually with the center.Radial pattern polarization layer 55 matches mutually therewith, does to be made up of the circular dim light layer of two steps at the dim light layer 54 of quartz base plate lower plane, and the outer ring diameter is ф e
1, ф e
1=0.4r
3, interior round diameter is ф e
2, ф e
2=0.2r
3, r wherein
3Be the logical light radius of polarization reinforcement plate, from cylindrical to zone the interior circle to 193nm light dim light 35%, inner headed face zone dim light 85%.
The embodiment of the invention 3, owing to placed polarization reinforcement plate 50 with dim light and polarization characteristic, allow the imaging light that can superpose mutually pass through, the light that plays negative function does not pass through, significantly strengthened the contrast of litho pattern, improve the photolithography resolution of Micropicture, the thinnest photolithography resolution reaches 0.11 micron.
Claims (2)
1. deep UV projection photoetching objective lens, comprise outer field constant temperature hermetically sealed case (8), middle layer and endothecium structure, the middle layer is a lens barrel, be formed by connecting with web member by first lens barrel and second lens barrel, internal layer is ten optical lens components and ten lens frame assemblies of separating the fixed optics lens element, the optical system of ten optical lens components compositions is two telecentric systems, it is characterized in that: between ten optical lens components of described internal layer, be provided with resolving power and strengthen assembly (7), resolving power strengthens assembly (7) ten optical lens components is divided into the two groups of object lens in front and back, preceding group object lens are made up of first to fourth lens, back group object lens are made up of the 5th to the tenth lens, the light hurdle face (23) that resolving power strengthens assembly (7) is picture side's focal plane of preceding group object lens, also being the object space focal plane of back group object lens, also is the pupil plane of optical system simultaneously; It is position phase reinforcement plate (45) that described resolving power strengthens assembly, the position that the plane makes on dim light layer (47) that position phase reinforcement plate (45) is made by quartz base plate (46), quartz base plate lower plane and the quartz base plate layer (48) is mutually formed, described dim light layer (47) is the square dim light layer of one two step, and the outer square length of side is c
1, c
1Span be 0.4r
1To 0.55r
1, the interior square length of side is c
2, c
2Span be 0.2r
1To 0.4r
1, r wherein
1Logical light radius for position phase reinforcement plate.
2. deep UV projection photoetching objective lens according to claim 1, its feature also is: described position is the complete printing opacity of layer (48) mutually, is made up of 16x16-64x64 array of small squares figure (49), and a position phase value is 0, π/4, pi/2, π.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100093698A CN101566721B (en) | 2005-02-07 | 2005-02-07 | Deep ultraviolet projection photoetching objective lens |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100093698A CN101566721B (en) | 2005-02-07 | 2005-02-07 | Deep ultraviolet projection photoetching objective lens |
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|---|---|---|---|
| CNB2005100113301A Division CN100547447C (en) | 2005-02-07 | 2005-02-07 | Deep ultraviolet projection photoetching objective lens |
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| CN101566721A CN101566721A (en) | 2009-10-28 |
| CN101566721B true CN101566721B (en) | 2010-09-22 |
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| CN103631002A (en) * | 2013-11-14 | 2014-03-12 | 中国科学院上海光学精密机械研究所 | Compact photolithographic projection lens |
| CN113219639B (en) * | 2021-05-24 | 2021-11-26 | 深圳市视清科技有限公司 | Optical lens and image pickup apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1385725A (en) * | 2001-05-14 | 2002-12-18 | 奥林巴斯光学工业株式会社 | Optics Device |
| CN1407407A (en) * | 2001-08-20 | 2003-04-02 | 中国科学院光电技术研究所 | Photoetching imaging filter |
| CN1218205C (en) * | 2001-05-16 | 2005-09-07 | 中国科学院光电技术研究所 | Super-resolution projection photoetching objective lens |
-
2005
- 2005-02-07 CN CN2009100093698A patent/CN101566721B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1385725A (en) * | 2001-05-14 | 2002-12-18 | 奥林巴斯光学工业株式会社 | Optics Device |
| CN1218205C (en) * | 2001-05-16 | 2005-09-07 | 中国科学院光电技术研究所 | Super-resolution projection photoetching objective lens |
| CN1407407A (en) * | 2001-08-20 | 2003-04-02 | 中国科学院光电技术研究所 | Photoetching imaging filter |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101566721A (en) | 2009-10-28 |
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