CN101562186A - Pixel structure and repair method thereof - Google Patents
Pixel structure and repair method thereof Download PDFInfo
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- CN101562186A CN101562186A CNA2008100952108A CN200810095210A CN101562186A CN 101562186 A CN101562186 A CN 101562186A CN A2008100952108 A CNA2008100952108 A CN A2008100952108A CN 200810095210 A CN200810095210 A CN 200810095210A CN 101562186 A CN101562186 A CN 101562186A
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- data wire
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Abstract
The invention provides a pixel structure easy to repair, which comprises a scanning wire, a grid electrode, a shared distribution wire, a first dielectric layer, a channel layer, a source electrode, a drain electrode, a data wire, a capacitance coupling electrode, a second dielectric layer and a pixel electrode, wherein the grid electrode, the shared distribution wire and the scanning wire are arranged on a base plate, and the grid electrode is electrically connected with the scanning wire. The shared distribution wire is provided with at least one first opening, and at least part of the first opening is positioned between the data wire and the capacitance coupling electrode. The channel layer is arranged on the first dielectric layer above the grid electrode. The source electrode and the drain electrode are arranged on the channel layer. The capacitance coupling electrode is arranged on the first dielectric layer above the shared distribution wire and is electrically connected with the drain electrode. The pixel electrode is arranged on the second dielectric layer and is electrically connected with the capacitance coupling electrode.
Description
Technical field
The invention relates to a kind of dot structure and method for repairing and mending thereof, and particularly relevant for the dot structure and the method for repairing and mending thereof of the simple and easy repairing of a kind of energy.
Background technology
Social now multimedia technology is quite flourishing, is indebted to the progress of semiconductor element or display unit mostly.With regard to display, have that high image quality, space utilization efficient are good, (Thin Film Transistor Liquid Crystal Display TFT-LCD) becomes the main flow in market to the Thin Film Transistor-LCD of low consumpting power, advantageous characteristic such as radiationless gradually.General Thin Film Transistor-LCD is made of the liquid crystal layer that a thin-film transistor array base-plate, a subtend substrate and are sandwiched between aforementioned two substrates.Wherein, thin-film transistor array base-plate comprises that mainly substrate, scan line (Scan line), data wire (Date line) and the dot structure of arrayed on substrate constitute.Scan line can be passed to signal corresponding dot structure with data wire, to reach the purpose of demonstration.Generally speaking, (Storage capacitor Cst), reaches the purpose of demonstration in order to the auxiliary pixel structure all can to have a reservior capacitor in the dot structure.
The dot structure that is proposed in U.S. Patent number US 7,057,207, it mainly is that storage capacitors electrode (Storage capacitance electrode) is divided into three sub-electrodes, and these three sub-electrodes electrically connect with drain electrode respectively.When data wire because of metal residual or foreign matter during with wherein a sub-electrode short circuit, operating personnel just separate this sub-electrode by the mode of laser cutting with drain electrode.Yet sub-electrode is with after drain electrode separates, and the orientation of storage capacitors value, aperture opening ratio and the liquid crystal of dot structure all can obviously be subjected to bad influence, and then makes display quality descend.
Summary of the invention
The invention provides a kind of dot structure, it has the advantage that is easy to repair.
The invention provides a kind of method for repairing and mending, it can repair dot structure of the present invention, to improve the product yield.
The present invention proposes a kind of dot structure, and it is suitable for being disposed on the substrate.Dot structure of the present invention comprises one scan line, a grid, a shared distribution, one first dielectric layer, a channel layer, one source pole, a drain electrode, a data wire, a capacitive coupling electrode, one second dielectric layer and a pixel electrode.Wherein, grid and scan line are disposed on the substrate, and grid and scan line electric connection.In addition, shared distribution has at least one first opening, and shared distribution is disposed on the substrate.First dielectric layer covers scan line, grid and shared distribution.Above-mentioned channel layer is disposed on first dielectric layer of grid top.In addition, source electrode and drain configuration are on channel layer.Above-mentioned data wire is disposed on first dielectric layer, and data wire can electrically connect with source electrode.In addition, capacitive coupling electrode is disposed on first dielectric layer of shared distribution top, and capacitive coupling electrode can electrically connect with drain electrode.Wherein, first opening of shared distribution to small part between data wire and capacitive coupling electrode.The second above-mentioned dielectric layer can cover source electrode, drain electrode and data wire.Pixel electrode of the present invention is disposed on second dielectric layer, and pixel electrode and capacitive coupling electrode electric connection.
In one embodiment of this invention, above-mentioned shared distribution also comprises one second opening, and to small part between capacitive coupling electrode and an adjacent data wire.
In one embodiment of this invention, said second dielectric layer has a contact window, and exposing the capacitive coupling electrode of part, and pixel electrode is by second contact window and electrically connecting with capacitive coupling electrode.
The present invention proposes a kind of method for repairing and mending, and it is suitable for above-mentioned dot structure is repaired.When data wire was connected with capacitive coupling electrode, method for repairing and mending of the present invention comprised: by first opening, and the junction of cutting data line and capacitive coupling electrode.
In one embodiment of this invention, the method for above-mentioned cutting data line and capacitive coupling electrode comprises laser cutting.
In one embodiment of this invention, above-mentioned method for repairing and mending also comprises by second opening, cuts the adjacent data wire and the junction of capacitive coupling electrode.
In one embodiment of this invention, the method for above-mentioned cutting data line and capacitive coupling electrode comprises laser cutting.
Because first opening on the shared distribution of the present invention is between data wire and capacitive coupling electrode.Therefore, when data wire and capacitive coupling electrode had unusual short circuit phenomenon, operating personnel can and utilize the mode of laser cutting that data wire is separated with capacitive coupling electrode by first opening.In addition, when adjacent data wire and capacitive coupling electrode had unusual short circuit phenomenon, operating personnel can and utilize the mode of laser cutting that adjacent data wire is separated with capacitive coupling electrode by second opening.Dot structure of the present invention is easy to repair, and dot structure its storage capacitors and aperture opening ratio after repairing can not be adversely affected.
Description of drawings
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, below in conjunction with accompanying drawing the specific embodiment of the present invention is elaborated, wherein:
Fig. 1 is the dot structure vertical view of one embodiment of the invention.
Fig. 2 is the generalized section of Fig. 1 along A-A ' and B-B ' hatching.
Fig. 3 is the schematic diagram that the present invention has the dot structure of defective.
Fig. 4 is the schematic diagram after dot structure of the present invention is repaired.
The main element symbol description:
100,100 ': dot structure
102: substrate
110: scan line
112: grid
114: shared distribution
114a: first opening
114b: second opening
120: the first dielectric layers
122: channel layer
124: ohmic contact layer
130: source electrode
132: drain electrode
134,134 ': data wire
136: capacitive coupling electrode
140: the second dielectric layers
150: pixel electrode
C: contact window
Embodiment
Fig. 1 is the dot structure vertical view of one embodiment of the invention, and Fig. 2 is the generalized section of Fig. 1 along A-A ' and B-B ' hatching.For graphic simple and clear, omitted among Fig. 1 and illustrated dielectric layer, but the dielectric layer in the dot structure can be known and sees among Fig. 2.Please refer to Fig. 1 and Fig. 2, dot structure 100 of the present invention is suitable for being disposed on the substrate 102, and dot structure of the present invention 100 comprises one scan line 110, a grid 112, one shared distribution 114, one first dielectric layer 120, a channel layer 122, one source pole 130, a drain electrode 132, one data wire 134, a capacitive coupling electrode 136, one second dielectric layer 140 and a pixel electrode 150.Wherein, scan line 110, grid 112 all are disposed on the substrate 102 with shared distribution (Common line) 114, and grid 112 electrically connects with scan line 110.On the practice, scan line 110, grid 112 can be by being formed in the lump on the substrate 102 with the mask processing procedure with shared distribution 114.
Specifically, shared distribution 114 has at least one first opening 114a.As shown in Figure 1, the first opening 114a of shared distribution 114 to small part between data wire 134 and capacitive coupling electrode 136.In one embodiment, optionally form one second opening 114b on the shared distribution 114.This second opening 114b is positioned between capacitive coupling electrode 136 and adjacent another data wire 134 ' to small part.
In addition, first dielectric layer 120 as shown in Figure 2 can cover scan line 110, grid 112 and shared distribution 114.Channel layer 122 can be disposed on first dielectric layer 120 of grid 112 tops.In addition, source electrode 130 is configured on the channel layer 122 with drain electrode 132.For the contact impedance between metal material and the semi-conducting material is descended, can form an ohmic contact layer 124 between channel layer 122 and the source electrode 130 and between channel layer 122 and the drain electrode 132.On the other hand, data wire 134 is disposed on first dielectric layer 120, and data wire 134 can electrically connect with source electrode 130.As shown in Figure 2, capacitive coupling electrode 136 of the present invention can be disposed on first dielectric layer 120 of shared distribution 114 tops, with form reservior capacitor (Storagecapacitor, Cst).
It should be noted that drain electrode 132 can electrically connect with capacitive coupling electrode 136.As shown in Figure 1, capacitive coupling electrode 136 can form by 132 extended parts of drain electrode.On the practice, source electrode 130, drain electrode 132, data wire 134 can form by same mask processing procedure in the lump with capacitive coupling electrode 136.In addition, second dielectric layer 140 of the present invention can cover source electrode 130, drain electrode 132, data wire 134 and capacitive coupling electrode 136.Pixel electrode 150 can be disposed on second dielectric layer 140, and pixel electrode 150 can be by a contact window (Contact window) C, and electrically connects with capacitive coupling electrode 136.So far above-mentioned, roughly dot structure 100 of the present invention has been introduced.Then hereinafter will illustrate how to utilize method for repairing and mending of the present invention, the dot structure with defective will be repaired.
Fig. 3 is the schematic diagram that the present invention has the dot structure of defective.Please refer to Fig. 3, when data wire 134 and capacitive coupling electrode 136 because of the metal in the manufacture process or foreign matter is residual when causing short circuit (D place as shown in Figure 3), method for repairing and mending of the present invention can pass through the first opening 114a, for example be mode, come the junction of mask data line 134 and capacitive coupling electrode 136 with laser cutting.As shown in Figure 4, dot structure 100 ' is after repairing, data wire 134 can be separated from each other with capacitive coupling electrode 136, and therefore the size of capacitive coupling electrode 136 can can't not have the problem that the storage capacitors value descends as the dot structure that prior art is put forward because of repairing reduces after repairing.
What deserves to be mentioned is that the first opening 114a on the shared distribution 114 can effectively avoid dot structure 100 ' that the anomaly that pixel electrode 150 and shared distribution 114 are welded together takes place after repairing.On the other hand, dot structure 100 ' is after repairing, and the orientation of its aperture opening ratio and liquid crystal can not be subjected to bad influence.In addition, when as if adjacent data wire 134 ' and capacitive coupling electrode 136 unusual short circuit phenomenon being arranged, method for repairing and mending of the present invention more can pass through the second opening 114b, to cut the junction of adjacent data wire 134 ' and capacitive coupling electrode 136.
In sum, since the shared distribution of the present invention on first opening between data wire and capacitive coupling electrode.Therefore, when unusual short circuit phenomenon took place for data wire and capacitive coupling electrode, operating personnel can and utilize the mode of laser cutting that data wire is separated with capacitive coupling electrode by first opening.In addition, when adjacent data wire and capacitive coupling electrode had unusual short circuit phenomenon, operating personnel can and utilize the mode of laser cutting that adjacent data wire is separated with capacitive coupling electrode by second opening.Dot structure of the present invention can reach the purpose of reparation easily by method for repairing and mending of the present invention, and dot structure its storage capacitors and aperture opening ratio after repairing can not be adversely affected.
Though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little modification and perfect, so protection scope of the present invention is when with being as the criterion that claims were defined.
Claims (7)
1. a dot structure is suitable for being disposed on the substrate, and this dot structure comprises:
The one scan line;
One grid is disposed on this substrate with this scan line, and this grid and the electric connection of this scan line;
One shared distribution has at least one first opening, and this shared distribution is disposed on this substrate;
One first dielectric layer covers this scan line, this grid and this shared distribution;
One channel layer is disposed on this first dielectric layer of this grid top;
An one source pole and a drain electrode are configured on this channel layer;
One data wire is disposed on this first dielectric layer, and this data wire and the electric connection of this source electrode;
One capacitive coupling electrode is disposed on this first dielectric layer of this shared distribution top, and this capacitive coupling electrode and this drain electrode electric connection, wherein first opening of this shared distribution to small part between this data wire and this capacitive coupling electrode;
One second dielectric layer covers this source electrode, this drain electrode and this data wire; And
One pixel electrode is disposed on this second dielectric layer, and this pixel electrode and the electric connection of this capacitive coupling electrode.
2. dot structure as claimed in claim 1 is characterized in that, this shared distribution also comprises one second opening, to small part between this capacitive coupling electrode and adjacent another data wire.
3. dot structure as claimed in claim 1 is characterized in that, this second dielectric layer has a contact window, and exposing this capacitive coupling electrode of part, and this pixel electrode electrically connects by this second contact window and with this capacitive coupling electrode.
4. a method for repairing and mending is suitable for the dot structure of claim 1 is repaired, and when this data wire was connected with this capacitive coupling electrode, this method for repairing and mending comprised:
By this first opening, the junction of cutting this data wire and this capacitive coupling electrode.
5. method for repairing and mending as claimed in claim 4 is characterized in that the method for cutting this data wire and this capacitive coupling electrode comprises laser cutting.
6. method for repairing and mending as claimed in claim 1 is characterized in that, when another adjacent data wire is connected with this capacitive coupling electrode, also comprises and cuts this adjacent data wire and the junction of this capacitive coupling electrode by this second opening.
7. method for repairing and mending as claimed in claim 6 is characterized in that the method for cutting this data wire and this capacitive coupling electrode comprises laser cutting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100952108A CN101562186B (en) | 2008-04-18 | 2008-04-18 | Pixel structure and repair method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100952108A CN101562186B (en) | 2008-04-18 | 2008-04-18 | Pixel structure and repair method thereof |
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| CN101562186A true CN101562186A (en) | 2009-10-21 |
| CN101562186B CN101562186B (en) | 2012-02-01 |
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| CN2008100952108A Expired - Fee Related CN101562186B (en) | 2008-04-18 | 2008-04-18 | Pixel structure and repair method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101012718B1 (en) * | 2003-12-30 | 2011-02-09 | 엘지디스플레이 주식회사 | Method of fabricating array substrate for use in liquid crystal display device |
| CN100437313C (en) * | 2006-11-07 | 2008-11-26 | 友达光电股份有限公司 | Pixel structure and its repair method |
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Granted publication date: 20120201 Termination date: 20200418 |