CN101562168A - Multiple-crystal grain modularized encapsulation structure and encapsulation method thereof - Google Patents
Multiple-crystal grain modularized encapsulation structure and encapsulation method thereof Download PDFInfo
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- CN101562168A CN101562168A CN 200810092254 CN200810092254A CN101562168A CN 101562168 A CN101562168 A CN 101562168A CN 200810092254 CN200810092254 CN 200810092254 CN 200810092254 A CN200810092254 A CN 200810092254A CN 101562168 A CN101562168 A CN 101562168A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Abstract
The invention discloses a crystal grain encapsulation structure which comprises a carrier plate, wherein the carrier plate is provided with a front surface and a back surface which are provided with a modularized line of electric connection, crystal grains are electrically connected with the modularized line on the front surface in a peritectic mode, every crystal grain is provided with an active surface, and the central region of the crystal grain, which is close to the active surface, is provided with a plurality of weld pads. The crystal grains and the carrier plate are wrapped by a macromolecule material layer. The modularized line on the front surface of the carrier plate comprises a plurality of metal wires which are electrically connected with a plurality of first conductive connection points and a plurality of metal end points, a plurality of metal end points are correspondingly arranged on the back surface of the carrier plate by the through holes on the carrier plate, and a plurality of metal end points on the back surface are electrically connected with a plurality of second conductive connection points by a plurality of second metal wires, wherein a plurality of weld pads on the active surfaces of the crystal grains are electrically connected with a plurality of first conductive connection points, and partial metal end points are exposed.
Description
Technical field
The present invention mainly provides a kind of semiconductor encapsulated element, more particularly relates to the encapsulating structure and the method for packing thereof of multiple grains module.
Background technology
Integrated circuit comprises semiconductor grain (dice) usually and is electrically connected to lead frame (lead-frame), and its lead frame is with supporting crystal grain and in order to electrically connect crystal grain and to have the substrate of circuit.Under the condition of this kind configuration, lead frame and crystal grain according to the demand of crystal grain, also can utilize pottery and metal as packaging body by for example electric connection such as gold thread, aluminum steel and enveloped by capsulation material of lead.When the demand and the execution speed increase day by day faster of microminiaturization, for various electronic components, (the multi-chip modulesystem of multiple grains module system; MCMs) be to have attractive spot.System of multiple grains module system comprises one or most crystal grain, and it can increase the system operation speed restriction by link road long in the printed circuit board (PCB).In addition, the multiple grains module system can provide a better packaging efficiency.
In general, the multiple grains module system can be designed to comprise one or a plurality of crystal grain in single packaging body, or comprise the crystal grain of same size and function, and for example, single-linememory module (SIMM) or single-in-line is package (SIP).What learn is that semiconductor grain has early stage infringement speed (early failure rate) it is a reference value as the phase of early dying young with regard to present.In all packaging bodies, this kind phenomenon often occurs in the multiple grains module system.For example, the multiple grains module system is made of ten crystal grain, and its other yield of each crystal grain is 95%, can have when crystal grain is tested in the first time to surpass 60% yield; When the multiple grains module system is when being made of 20 crystal grain, each crystal grain other yield is 95%, but when first time crystal grain test, its yield then is 36%, therefore, influences the application of multiple grains module system on market easily.
Summary of the invention
In view of above problem, main purpose of the present invention is to provide a kind of die package structure, be that many good crystal grain (Known good die) of test are seated on the support plate that disposes configuration, and after encapsulation, carry out a pre-burning (burn-in) step and crystal grain test (testing) and whether have bad crystal grain to exist with detection, if do not have, then with a most die package to form a multiple-crystal grain modularized encapsulation structure; If detect bad crystal grain, then bad crystal grain is removed, to form a plurality of crystal grain of independently finishing encapsulation separately.
In view of the above, the present invention discloses a kind of support plate with a plurality of modularization line constructions, comprise a positive and back side, and each line construction that is arranged in a plurality of modularization line constructions in support plate front is to electrically connect a plurality of first conductive junction points and a plurality of metal endpoints by many first metal wires, support plate is characterised in that: a plurality of metal endpoints relatively dispose to a back side of support plate via the perforation on the support plate, and a plurality of metal endpoints that are positioned on the back side electrically connect by many second metal wires and a plurality of second conductive junction point.
The present invention also discloses a kind of encapsulating structure of multiple grains module, comprise: a support plate, support plate has a positive and back side, and support plate is made up of a plurality of modularization line constructions, a plurality of crystal grain electrically connect with peritectoid mode and each modularization line construction, the middle section that each crystal grain has an active surface and is adjacent to active surface disposes a plurality of weld pads, coat a front of a plurality of crystal grain and part support plate with a polymer material layer, it is characterized in that: each line construction that is arranged in a plurality of modularization line constructions in support plate front is to be electrically connected to a plurality of first conductive junction points and a plurality of metal endpoints by many first metal wires, and a plurality of metal endpoints relatively dispose to the back side of support plate via the perforation on the support plate, and a plurality of metal endpoints that are positioned on the back side electrically connect by many second metal wires and a plurality of second conductive junction point, and wherein a plurality of weld pads on the active surface of each crystal grain are electrically connected on a plurality of first conductive junction points and expose partly metal endpoints.
The present invention discloses a kind of die package structure in addition, comprise: a support plate, has a positive and back side, and dispose the modularization circuit of electric connection on the front and the back side, one crystal grain is with peritectoid mode and positive modularization circuit electric connection, the middle section that each crystal grain has an active surface and is adjacent to active surface disposes a plurality of weld pads, coat crystal grain and support plate with a polymer material layer, it is characterized in that: the modularization circuit that is positioned at the support plate front is to electrically connect a plurality of first conductive junction points and a plurality of metal endpoints by many first metal wires, and a plurality of metal endpoints relatively dispose the back side to support plate via the perforation on the support plate, and a plurality of metal endpoints that are positioned on the back side electrically connect by many second metal wires and a plurality of second conductive junction point, and wherein a plurality of weld pads on the active surface of crystal grain are electrically connected on a plurality of first conductive junction points and expose partly metal endpoints.
The present invention also discloses a kind of method for packing of multiple grains moduleization, comprise: a support plate with a plurality of modularization line constructions is provided, support plate has a positive and back side, and each line construction that is arranged in a plurality of modularization line constructions in support plate front is to electrically connect a plurality of first conductive junction points and a plurality of metal endpoints by many first metal wires; A plurality of crystal grain are provided, and each crystal grain has an active surface and dispose a plurality of weld pads on the middle section of active surface; Putting a plurality of crystal grain to support plate, is that each crystal grain is electrically connected to a plurality of weld pads on the active surface of crystal grain on a plurality of first conductive junction points in the peritectoid mode; Forming packaging body, is to coat the positive of a plurality of crystal grain and support plate and expose a plurality of metal endpoints with a polymer material layer; And cutting polymer material layer and support plate, with the formation multiple-crystal grain modularized encapsulation structure, and multiple-crystal grain modularized encapsulation structure exposes a plurality of metal endpoints; The support plate that wherein has a plurality of modularization line constructions comprises that further a plurality of metal endpoints relatively dispose to this back side of support plate via the perforation on the support plate, and a plurality of metal endpoints that are positioned on the back side electrically connect by many second metal wires and a plurality of second conductive junction point.
Relevant characteristics and implementation of the present invention cooperate diagram to be described in detail as follows as most preferred embodiment now.(for making purpose of the present invention, structure, feature and function thereof there are further understanding, cooperate embodiment to be described in detail as follows now.)
Description of drawings
Figure 1A to Fig. 1 C be expression disclosed in this invention in support plate the front and the back side on dispose the vertical view of first conductive junction point, second conductive junction point, many first metallic circuits and second circuit respectively;
Fig. 2 A and Fig. 2 C are to be illustrated respectively in the vertical view of putting a plurality of crystal grain on the front of support plate and electrically connecting with a plurality of metal endpoints on the support plate;
Fig. 2 D is the AA profile of presentation graphs 2A to Fig. 2 C;
Fig. 2 E is the schematic diagram that expression exposes the end of the conductive junction point at the support plate back side and a plurality of metal endpoints;
Fig. 2 F is the cutaway view of the BB section of presentation graphs 2E;
Fig. 3 is the schematic diagram that the expression packaging body has the crystal grain of fault after tested afterwards;
Fig. 4 A is the schematic diagram that expression has the encapsulating structure of single crystal grain;
Fig. 4 B is the schematic diagram that expression has the encapsulating structure of two crystal grain; And
Fig. 5 is the method for packing schematic flow sheet of a kind of multiple grains moduleization of expression.
[main element symbol description]
10 support plates, 11 fronts
12 back sides, 14 modularization line constructions
The 110A first metal wire 110B second metal wire
112 metal endpoints, 114 first conductive junction points
116 second conductive junction points, 20 crystal grain
24 modular encapsulating structures
The crystal grain of 30 polymer material layers, 40 faults
50 electrically connect element
510 provide the support plate with a plurality of modularization line constructions
520 provide a plurality of crystal grain and with peritectoid crystal grain are electrically connected on the support plate
530 form a packaging body
540 pairs of packaging bodies are tested
550 cutting packaging bodies
560 form a polymer material layer and expose a plurality of second metallic contacts in the support plate back side
570 form a plurality of conducting elements
Embodiment
The encapsulating structure that the present invention is a kind of semiconductor package structure and method for packing thereof, particularly a kind of crystal grain in this direction of inquiring into.In order to understand the present invention up hill and dale, detailed encapsulation step will be proposed in following description.Apparently, execution of the present invention does not limit the specific details that skill person had the knack of of the semiconductor or the method for packing of crystal grain.On the other hand, the encapsulating structure of well-known semiconductor and crystal grain and method for packing thereof and etc. the detailed step of last part technology be not described in the details, with the restriction of avoiding causing the present invention unnecessary.Yet, for preferred embodiment of the present invention, can be described in detail as follows, yet except these were described in detail, the present invention can also implement in other embodiments widely, and scope of the present invention not limited, it is as the criterion with claims.
Please refer to Figure 1A to Fig. 1 C and be expression disclosed in this invention in support plate the front and the back side on dispose the vertical view of first conductive junction point, second conductive junction point, many first metallic circuits and second circuit respectively.At first, shown in Figure 1A, provide a support plate 10, it has positive 11 and one back side 12, support plate 10 is made up of a plurality of modularization line construction 14, and each circuit in the modularization line construction 14 in its front 11 is by many first metal wires (conductive trace) 110A a plurality of first conductive junction points (pad) 114 and a plurality of metal endpoints (terminal) 112 to be electrically connected; Wherein first conductive junction point 114 is to arrange in the array mode, particularly (for example: 256MB DRAM) when being connected, this conductive junction point 114 is disposed near near the circuit middle section in fan-in (fan-in) mode with dynamic random access memory when this conductive junction point 114; In addition, these first conductive junction points 114 can be metal coupling (bump); Metal endpoints 112 then forms a kind of golden finger (goldenfinger) structure, shown in Figure 1B.Be noted that at this, in the present embodiment, because the weld pad on each dynamic random access memory (not expression in the drawings) position is all identical, therefore can each dynamic random access memory be done suitable electric connection by the metal wire sections 114 on support plate 10 as suitable wiring (layout); For example: with 4 be same capability equally, 256MB for example, dynamic random access memory be packaged together, form the memory module that memory capacity is 1GB.In addition, in the present embodiment, the capacity of memory also can select different capabilities person, visual user's demand and designing, the present invention is not limited.
In addition, metal endpoints 112 can relatively dispose to the back side 12 of support plate 10 via the perforation on the support plate 10, shown in Fig. 1 C, dispose a plurality of second conductive junction points 116 and a plurality of second metal wire 110B on the back side 12 of support plate 10, it is by many second metal wire 110B a plurality of second conductive junction points 116 and a plurality of metal endpoints 112 to be electrically connected, and wherein these a plurality of metal endpoints 112 are correspondingly with metal endpoints 112 on support plate 10 fronts 11 and are electrically connected.Being stressed that at this, is on the zone that is configured in fan-out (fan-out) mode near the circuit periphery at second conductive junction point 116 on the back side 12 of support plate 10.In addition, these 116 of a plurality of second conductive junction points can be weld pad (pad) or metal coupling (bump).In addition, when metal endpoints 112 formed the structure of golden finger, it can by an insulating material (for example plastics) (not expression in the drawings) or ceramic material (ceramic) coats partly metal endpoints 112; In addition, in the present invention, support plate 10 can be pliability substrate (flexible substrate) or rigid substrate (rigid substrate).
Then, please refer to Fig. 2 A and Fig. 2 B, is to be illustrated respectively in the vertical view of putting a plurality of crystal grain on the front 11 of support plate 10 and electrically connecting with a plurality of metal endpoints 112 on the support plate 10.In this enforcement, be that a wafer (not expression in the drawings) is provided earlier, and on wafer, form a plurality of crystal grain 20; Then carry out the wafer cutting step, and the back side that makes each crystal grain 20 up; Then, re-using fetching device (not expression in the drawings) picks up each crystal grain 20, and be placed on modularization line construction 14 on the front 11 of support plate 10, and a plurality of weld pads on the active surface of each crystal grain 20 and a plurality of first conductive junction points 114 on support plate 10 fronts 11 are electrically connected, make that each crystal grain 20 can be by a plurality of first conductive junction points 114 and many first metallic circuit 110A and 112 electric connections of a plurality of metal endpoints, shown in Fig. 2 A.
In addition, when fetching device will be positioned over crystal grain 20 on the support plate 10, can be by the reference point on the support plate 10 (not expression in the drawings), for example a plurality of first conductive junction points 114, calculate the relative position of each crystal grain 20, adding fetching device does not need therefore crystal grain 20 upsets can accurately be positioned over crystal grain 20 on the support plate 10.So when a plurality of crystal grain 20 are disposed on the support plate 10, good accuracy and reliability can be arranged.
Then, please refer to Fig. 2 B, is another embodiment of the present invention.Shown in Fig. 2 B, its be with metal endpoints 112 centralized configuration in each the modularization line construction 14 on the support plate 10 on the moderate position of modularization line construction 14, therefore, corresponding socket also only need set up an engaging zones to get final product.In addition, please refer to Fig. 2 C, it is another change with reference to figure 2B, its also with metal endpoints 112 centralized configuration on the moderate position of modularization line construction 14, but its zone that disposes metal endpoints 112 is the rectangle perimeter that protrudes from support plate 10, and this kind mode will make the simpler material of also more saving of the design of corresponding socket.
After many crystal grain 20 are disposed on the support plate 10 in regular turn, carry out sealing adhesive process (encapsulating process) immediately.Shown in Fig. 2 A, be the enlarged drawing that shows a modularization line construction 14 on the support plate 10, its objective is and be convenient to explanation.At first, shown in Fig. 2 A, a kind of polymer material layer 30 of coating on the front 11 of support plate 10 and crystal grain 20, and use die device (not expression in the drawings) that polymer material layer 30 is flattened, make polymer material layer 30 form the surface of planarization, so that polymer material layer riddles between each crystal grain 20 and coat each crystal grain 20, and expose metal endpoints 112; Then, can be optionally the polymer material layer 30 of planarization be carried out a baking program, so that polymer material layer 30 solidifies to form a packaging body, the cutaway view of the AA section of its Fig. 2 A to Fig. 2 C is shown in Fig. 2 D.Clearly, this technology only coats the front 11 of support plate 10, and also is the back side 12 coatings with support plate 10, so many second metal wire 110B on the back side 12, a plurality of second conductive junction point 116 and a plurality of metal endpoints 112 are exposed fully.Be stressed that simultaneously Fig. 2 D also is the representative graph of modularization encapsulating structure 24 of the present invention.
In addition, sealing adhesive process of the present invention also can select to use molding process (moldingprocess), more than/bed die (expression) in the drawings is 14 sealings of the modularization line construction on the support plate 10, only exposes the end of a plurality of metal endpoints 112.Then, again macromolecular material is injected/bed die, so that polymer material layer 30 riddles between each crystal grain 20 and coats each crystal grain 20.Clearly, this technology is simultaneously the front 11 of support plate 10 and the back side 12 to be coated, and wherein positive 11 cutaway view is identical with Fig. 2 D; Its back side 12 then and only exposes the end of a plurality of metal endpoints 112; Or only a plurality of second conductive junction points 116 on the back side 12 and the end of a plurality of metal endpoints 112 are exposed out, shown in Fig. 2 E, and the cutaway view of the BB section of its Fig. 2 E is shown in Fig. 2 F; Wherein the mode that a plurality of second conductive junction points 116 are exposed selects to utilize semiconductor technology: for example develop and etching, with polymer material layer 30 that removes part and a plurality of second conductive junction points 116 that expose support plate 10 back sides.
After finishing sealing adhesive process, can optionally carry out the program of pre-burning (burn-in) and crystal grain test (testing) earlier.So-called pre-burning is meant inserts semiconductor element on the special resistant to elevated temperatures burn-in board (Burn-in Board), and adds the semiconductor element condition of work, and for example voltage and electric current are inserted in the hot environment again, make its accelerated ageing.Then carry out the crystal grain test; be to carry out probe test at each crystal grain on support plate 10; load onto with the thin probe (probe) of gold thread technology at detection head as hair; contact with the contact on the crystal grain; test its electrical characteristic; underproof crystal grain can be put on mark, when follow-up crystal grain cutting step, marks marked underproof crystal grain and can be removed superseded.
Because the present invention carries out sealing in modular mode, and through after the above-mentioned test, use cutter (expression in the drawings) along Cutting Road 101 or cut 102 and cut.Crystal grain in each modularization encapsulating structure 24 all just often, then according to Cutting Road 101 or cut 102 adhesive body cut into a plurality of modularization encapsulating structures 24, shown in Fig. 2 D.If when a certain crystal grain in a certain modularization encapsulating structure 24 20 lost efficacy, clearly, this modularization encapsulating structure 24 can't reach function or the capacity in the design, so whole modularization encapsulating structure 24 must be eliminated.But three crystal grain 20 of other in this modularization encapsulating structure 24 are all normal; Therefore, the modularization encapsulating structure 24 that has fault crystal grain to exist can be chosen, and on corresponding second conductive junction point 116 of normal crystal grain institute on the modularization encapsulating structure 24, form and electrically connect element 50, the crystal grain 40 that indicates fault is not then electrically connected the connection of element 50, as shown in Figure 3.
Then, carry out cutting process to forming the modularization encapsulating structure 24 that electrically connects element 50, its cutting mode can be along the edge of polymer material layer 30 and the edge of fault crystal grain 40, and the modularization encapsulating structure 24 that will have fault crystal grain to exist cuts into a packaging body with single crystal grain 20, for example form the dram chip of a 256MB, shown in Fig. 4 A; And another has the packaging body of two crystal grain 20, for example forms the dram chip of a 512MB, shown in Fig. 4 B; Or also the modularization encapsulating structure 24 that has fault crystal grain to exist can be cut into the dram chip of three 256MB.Clearly, via the design of support plate 10 of the present invention, the modularization encapsulating structure 24 that has fault crystal grain to exist can be utilized again, and can reduce whole manufacturing cost.
Fig. 5 is the method for packing schematic flow sheet that expression the present invention discloses a kind of multiple grains moduleization.The step of the method for packing of its multiple grains moduleization comprises: step 510: the support plate with a plurality of modularization line constructions is provided, wherein support plate has a positive and back side, and each line construction that covers several modularization line constructions that is arranged in the support plate front is to electrically connect a plurality of first conductive junction points and a plurality of metal endpoints by many first metal wires; Step 520: a plurality of crystal grain are provided and crystal grain are electrically connected on the support plate in the peritectoid mode, wherein each crystal grain have active surface and in active surface near middle section on dispose a plurality of weld pads, then putting a plurality of crystal grain to support plate, is that each crystal grain is electrically connected to a plurality of weld pads on the active surface of crystal grain on a plurality of first conductive junction points in the peritectoid mode; Step 530: form a packaging body, it comprises: be to coat the positive of a plurality of crystal grain and support plate and expose a plurality of metal endpoints with a polymer material layer; Step 540: packaging body is tested, if be qualified crystal grain, promptly carry out step 550, the cutting packaging body, it comprises: cutting polymer material layer and support plate, to form multiple-crystal grain modularized encapsulation structure, and multiple-crystal grain modularized encapsulation structure exposes a plurality of metal endpoints, the support plate that wherein has a plurality of modularization line constructions comprises that also a plurality of metal endpoints relatively dispose to the back side of support plate via the perforation on the support plate, and a plurality of metal endpoints that are positioned on the back side are passed through many second metal wires and a plurality of second conductive junction point; If underproof crystal grain is arranged, then carry out step 560: be to form a polymer material layer in the support plate back side and expose a plurality of second metallic contacts; Then, be to form a plurality of conducting elements in step 570, on a plurality of second conductive junction points; Step 550 is cut polymer material layer, support plate and is removed a plurality of metal endpoints, to form a plurality of grainiesses of independently finishing encapsulation separately;
Though the present invention with aforesaid preferred embodiment openly as above; right its is not in order to limit the present invention; anyly have the knack of alike skill person; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, therefore scope of patent protection of the present invention must be looked this specification appending claims person of defining and is as the criterion.
Claims (10)
1, a kind of support plate with a plurality of modularization line constructions, comprise a positive and back side, and each this line construction that is arranged in these a plurality of modularization line constructions in this support plate front is to electrically connect a plurality of first conductive junction points and a plurality of metal endpoints by many first metal wires, and this support plate is characterised in that:
These a plurality of metal endpoints relatively dispose to a back side of this support plate via the perforation on this support plate, and these a plurality of metal endpoints that are positioned on this back side electrically connect by many second metal wires and a plurality of second conductive junction point.
2, a kind of encapsulating structure of multiple grains module, comprise: a support plate, this support plate has a positive and back side, and this support plate is made up of a plurality of modularization line constructions, a plurality of crystal grain electrically connect with peritectoid mode and each this modularization line construction, the middle section that each this crystal grain has an active surface and is adjacent to this active surface disposes a plurality of weld pads, coats these a plurality of crystal grain and this front of this support plate partly with a polymer material layer, it is characterized in that:
Each this line construction that is arranged in these a plurality of modularization line constructions in this support plate front is to electrically connect a plurality of first conductive junction points and a plurality of metal endpoints by many first metal wires, and these a plurality of metal endpoints relatively dispose to this back side of this support plate via the perforation on this support plate, and these a plurality of metal endpoints that are positioned on this back side electrically connect by many second metal wires and a plurality of second conductive junction point, and wherein these a plurality of weld pads on this active surface of each this crystal grain are electrically connected on those first conductive junction points and expose partly this metal endpoints.
3, encapsulating structure according to claim 2 is characterized in that, wherein these a plurality of crystal grain are the memory crystal grain with the same memory capacity.
4, encapsulating structure according to claim 2 is characterized in that, wherein these a plurality of crystal grain are the memory crystal grain with different memory capacity.
5, a kind of die package structure, comprise: a support plate, this support plate has a positive and back side, and should the front and this back side on dispose the modularization circuit of electric connection, one crystal grain electrically connects with peritectoid mode and this positive modularization circuit, the middle section that each this crystal grain has an active surface and is adjacent to this active surface disposes a plurality of weld pads, coats this crystal grain and this support plate with a polymer material layer, it is characterized in that:
This modularization circuit that is positioned at this support plate front is to electrically connect a plurality of first conductive junction points and a plurality of metal endpoints by many first metal wires, and these a plurality of metal endpoints relatively dispose to this back side of this support plate via the perforation on this support plate, and these a plurality of metal endpoints that are positioned on this back side electrically connect by many second metal wires and a plurality of second conductive junction point, and wherein these a plurality of weld pads on this active surface of this crystal grain are electrically connected on those first conductive junction points and expose partly this metal endpoints.
6, a kind of encapsulating structure of multiple grains module, comprise: a support plate, this support plate has a positive and back side, and this support plate is made up of a plurality of modularization line constructions, a plurality of crystal grain electrically connect with peritectoid mode and each this modularization line construction, the middle section that each this crystal grain has an active surface and is adjacent to this active surface disposes a plurality of weld pads, coats these a plurality of crystal grain and this support plate with a polymer material layer, it is characterized in that:
Each this line construction that is arranged in these a plurality of modularization line constructions in this support plate front is to electrically connect a plurality of first conductive junction points and a plurality of metal endpoints by many first metal wires, and these a plurality of metal endpoints relatively dispose to a back side of this support plate via the perforation on this support plate, and these a plurality of metal endpoints that are positioned on this back side electrically connect by many second metal wires and a plurality of second conductive junction point, and wherein these a plurality of weld pads on this active surface of each this crystal grain are electrically connected on those first conductive junction points and expose partly this metal endpoints.
7, a kind of method for packing of multiple grains moduleization is characterized in that, comprising:
One support plate with a plurality of modularization line constructions is provided, this support plate has a positive and back side, and each this line construction that is arranged in these a plurality of modularization line constructions in this support plate front is to electrically connect a plurality of first conductive junction points and a plurality of metal endpoints by many first metal wires;
A plurality of crystal grain are provided, and each this crystal grain has an active surface, and in this active surface near middle section on dispose a plurality of weld pads;
Put these a plurality of crystal grain to this support plate, each this crystal grain is electrically connected to these a plurality of weld pads on this active surface of this crystal grain on those first conductive junction points in the peritectoid mode;
Forming a packaging body, is to coat this front of these a plurality of crystal grain and this support plate and expose this a plurality of metal endpoints with a polymer material layer; And
Cut this polymer material layer and this support plate, forming a multiple-crystal grain modularized encapsulation structure, and this multiple-crystal grain modularized encapsulation structure exposes this a plurality of metal endpoints;
The support plate that wherein has these a plurality of modularization line constructions comprises that further these a plurality of metal endpoints relatively dispose to this back side of this support plate via the perforation on this support plate, and these a plurality of metal endpoints that are positioned on this back side electrically connect by many second metal wires and a plurality of second conductive junction point.
8, method for packing according to claim 7 is characterized in that, it carries out a burn in step before further being included in this polymer material layer of cutting.
9, method for packing according to claim 7 is characterized in that, it carries out a crystal grain testing procedure before further being included in this polymer material layer of cutting.
10, method for packing according to claim 9 is characterized in that, behind the testing procedure of finishing those crystal grain, further comprises:
If underproof crystal grain is arranged, then form another polymer material layer with the back side that coats this support plate and expose this a plurality of second metallic contacts;
Form a plurality of conducting elements, on these a plurality of second conductive junction points; And
Cut this polymer material layer, this support plate and remove this a plurality of metal endpoints, to form a plurality of grainiesses of independently finishing encapsulation separately.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810092254 CN101562168A (en) | 2008-04-17 | 2008-04-17 | Multiple-crystal grain modularized encapsulation structure and encapsulation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810092254 CN101562168A (en) | 2008-04-17 | 2008-04-17 | Multiple-crystal grain modularized encapsulation structure and encapsulation method thereof |
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| CN101562168A true CN101562168A (en) | 2009-10-21 |
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| CN 200810092254 Pending CN101562168A (en) | 2008-04-17 | 2008-04-17 | Multiple-crystal grain modularized encapsulation structure and encapsulation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109637564A (en) * | 2018-12-20 | 2019-04-16 | 惠州Tcl移动通信有限公司 | With more storage crystal grain storage devices and recognition methods |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109637564A (en) * | 2018-12-20 | 2019-04-16 | 惠州Tcl移动通信有限公司 | With more storage crystal grain storage devices and recognition methods |
| US11869621B2 (en) | 2018-12-20 | 2024-01-09 | Huizhou Tcl Mobile Communication Co., Ltd. | Storage device having multiple storage dies and identification method |
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