CN101555585A - Sputtering target - Google Patents
Sputtering target Download PDFInfo
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- CN101555585A CN101555585A CN 200910134430 CN200910134430A CN101555585A CN 101555585 A CN101555585 A CN 101555585A CN 200910134430 CN200910134430 CN 200910134430 CN 200910134430 A CN200910134430 A CN 200910134430A CN 101555585 A CN101555585 A CN 101555585A
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- target
- dash plate
- backboard
- sputtering target
- knitting layer
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 110
- 239000000498 cooling water Substances 0.000 claims abstract description 50
- 238000009940 knitting Methods 0.000 claims description 93
- 239000000463 material Substances 0.000 claims description 64
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 24
- 239000002826 coolant Substances 0.000 claims description 19
- 238000005520 cutting process Methods 0.000 claims description 18
- 238000003475 lamination Methods 0.000 claims description 5
- 238000004663 powder metallurgy Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 8
- 239000013077 target material Substances 0.000 abstract 5
- 208000037656 Respiratory Sounds Diseases 0.000 description 26
- 230000000052 comparative effect Effects 0.000 description 20
- 239000010949 copper Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 17
- 125000006850 spacer group Chemical group 0.000 description 13
- 238000010521 absorption reaction Methods 0.000 description 10
- 230000035939 shock Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000010791 quenching Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 241001669679 Eleotris Species 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- GQDHEYWVLBJKBA-UHFFFAOYSA-H copper(ii) phosphate Chemical compound [Cu+2].[Cu+2].[Cu+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O GQDHEYWVLBJKBA-UHFFFAOYSA-H 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005478 sputtering type Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010011376 Crepitations Diseases 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The object of the invention is to provide a sputtering target by which target material will not crack or fall off when a back plate is warped under the condition of sputtering while using cooling water to cool target material. The invention is characterized in that the sputtering target comprises a target material; a back plate; at least a baffle plate arranged between the target material and the back plate. The target material, the back plate and the baffle plate are integrally connected.
Description
Technical field
The present invention relates to sputtering target, carry out sputter when relating in particular to a large amount of water quench target of a kind of usefulness, target also is difficult for the sputtering target that cracks.
Background technology
All the time, as electronics/electrical component of for example semi-conductor etc. one-tenth embrane method, be extensive use of the sputtering method of controlling diaphragm thickness and composition easily with material.
The sputtering target that uses in this type of sputtering method generally engages target and backboard by grafting material and constitutes, and this target is made up of the film identical materials that needs form, and this backboard is made up of the material with good electroconductibility and thermal conductivity.When needs use large-area target, adopt a plurality of targets of cutting apart of a kind of use, the method for carrying out sputter when applying magnetic field.
If use this type of sputtering target to carry out sputter, the target heating can reduce the efficient of sputter.Therefore, in the process of carrying out sputter, need target is cooled off.
As target is carried out the refrigerative method, adopt the cooling-water flowing passage of the water coolant that on backboard, is provided for circulating usually, the water coolant that circulates in this cooling-water flowing passage by the cooling backboard, and absorbs the method for heat from target.In the method, general cooling-water flowing passage is that the circulation road inlet from the bottom surface that is arranged on backboard one end extends the side vertically upward, after under the arrival target, cross the central part of backboard and extend to the other end, arrive the outlet that is located at the backboard bottom surface again.When applying magnetic field as mentioned above, carrying out sputter, usually because huge power is born in the end of target, so especially the thermal value on this part is more.Therefore, if as mentioned above below the target end periphery circulation road inlet is set, by the positive bottom circulation water coolant of cooling-water flowing passage, then can carry out the cooling of target effectively from here to the target end.In addition, in order can more effectively cooling off, and the cooling-water flowing passage in the periphery under the target end to be widened, perhaps to be made backboard thinner the target end.
But,, then on target, crack easily if use water coolant that target is cooled off.The many tendencies of crackle with many more these targets more of cooling water inflow.And the crackle of described target has more the upper portion of present cooling-water flowing feeder connection, especially can bear huge power in the upper portion of above-mentioned cooling-water flowing feeder connection, when thermal value will crack for a long time significantly.One of reason of the crackle of described target is because hydraulic pressure of water coolant etc. and warpage takes place on backboard.
In recent years, film forming needs were increasing on large substrate by sputter, and target under this situation, needs to improve the film forming speed of sputter also maximizing thereupon, so must drop into very big electric power, the heat of generation also will increase naturally.Under this situation, to cool off target effectively, then need on the more part of above-mentioned thermal value, directly make the water coolant circulation, and need to increase cooling water inflow.But, so then will produce the crackle of target as mentioned above in a large number.Present situation is in the situation of this contradiction.
And,,, on backboard, produce warpage sometimes so backboard will bear brute force on the direction that target is set up owing to carry out sputter in a vacuum.Because the warpage of this backboard cracks on the target bonding by backboard sometimes.
Target warpage, crackle that is taken place when using the water quench target and when carrying out sputter and the method that prevents that comes off, having opened in the flat 6-65728 communique the spy and disclose a kind of method, is the method that the engaging zones of backboard and target is limited in the outer peripheral portion scope in addition of target member.
But the object of this method is not to apply magnetic field and the sputter carried out to sputtering target, this method is applied to have above-mentioned target end bears enormous power and especially be easy to generate on this part in the sputter of crackle situation, can't obtain effect of sufficient.
Patent documentation 1: Japanese patent laid-open 6-65728 communique
Summary of the invention
The object of the present invention is to provide a kind of sputtering target, when it carries out sputter etc. and causes backboard generation warpage when using the water quench target, do not produce the crackle of target or come off etc.
To achieve these goals, sputtering target of the present invention is characterised in that, comprising: target; Backboard; At least one dash plate, it is set between described target and the described backboard; Grafting material is bonded into one with described target, backboard and dash plate.
The optimal way of described sputtering target is, described target is made of a plurality of targets of cutting apart, at least one this cut apart target below, lamination has at least one to have the described dash plate of cutting apart the roughly the same planeform of target with this,
Described a plurality of targets of cutting apart are configured to, make the surface of described sputtering target roughly be in same plane,
The material of described dash plate is identical with the material of described backboard,
The thickness of described dash plate is 0.5～10mm,
When dash plate is 1, thickness between described target and described dash plate by the formed knitting layer of described grafting material, and the thickness sum by the formed knitting layer of described grafting material between described backboard and described dash plate is 0.25～4.5mm; When dash plate is two when above, thickness between described target and described dash plate by the formed knitting layer of described grafting material, and the thickness between described backboard and described dash plate by the formed knitting layer of described grafting material, and the summation by the thickness of the formed knitting layer of described grafting material between described dash plate and dash plate is 0.25～4.5mm
The material of described target is the material of making by powder metallurgy,
The material of described target is a pottery,
Described backboard possesses the cooling-water flowing passage, is used for circulation described target is carried out the refrigerative water coolant.
According to sputtering target of the present invention, when promptly using the water quench target and carry out sputter, also can prevent to produce warpage, the crackle of target or come off etc.If use this sputtering target,, also can suppress the generation of target crackle etc. even bear under the situation of enormous power in the more situation of cooling water inflow or the upper portion of cooling-water flowing feeder connection.
Therefore, if use sputtering target of the present invention,, also can use water coolant that target is carried out refrigerative and carry out sputter simultaneously efficiently even use large-scale target and improve film forming speed.
Description of drawings
Fig. 1 is the vertical view of sputtering target 1 of the present invention.
Fig. 2 is the sectional view of sputtering target 1 of the present invention.
Fig. 3 is the sectional view that does not possess the existing sputtering target 21 of dash plate.
Fig. 4 is the sectional view of the sputtering target of making in embodiment 1～16.
Fig. 5 is the synoptic diagram of expression withstand voltage test state.
Fig. 6 is the sectional view of the sputtering target of making in embodiment 17.
Fig. 7 is the sectional view of the sputtering target of making in comparative example 4.
Fig. 8 is the synoptic diagram of expression camber test state.
[nomenclature]
1 sputtering target
2 backboards
3a, 3b dash plate
4 targets
Target is cut apart in 4a, 4b end
The 4c central part is cut apart target
5 grafting materials
6 cooling-water flowing passages
7 cooling-water flowing feeder connections
8 cooling-water flowing channel outlet
21 sputtering targets
22 backboards
24 targets
Target is cut apart in 24a, 24b end
The 24c central part is cut apart target
25 grafting materials
26 cooling-water flowing passages
27 cooling-water flowing feeder connections
28 cooling-water flowing channel outlet
32 backboards
33 dash plates
34 targets
35 grafting materials
41,41A, 41B sputtering target
42 backboards
43 dash plates
44 cut apart target
Embodiment
Below, with reference to the accompanying drawings embodiments of the present invention (embodiment) are described in detail.
Fig. 1 and Fig. 2 represent the sputtering target 1 of a concrete example of sputtering target of the present invention, and Fig. 1 is its vertical view, and Fig. 2 is the sectional view at the V-V of Fig. 1 line.
Sputtering target 1 has backboard 2, dash plate 3a and dash plate 3b, target 4, grafting material 5.
Backboard 2 is formed by the central part 2c of heavy wall shape, the end 2a and the end 2b of thin-walled shape, and its section with the section of possessing portion between central part 2c and end 2a and end 2b is the shape of convex.
Backboard 2 is provided with cooling-water flowing passage 6.In sputter procedure, water coolant circulates in cooling-water flowing passage 6, by this water coolant the target 4 that is configured on the backboard 2 is cooled off.Cooling-water flowing passage 6 is by being constituted with the lower section: circulation road inlet 6a, and it extends upward from the cooling-water flowing feeder connection 7 on the 2a bottom surface, end that is set at backboard 2, arrives the positive bottom of end 2a upper surface; Circulation road central part 6c, central part 2c is crossed in its above-mentioned positive bottom from end 2a upper surface, arrives the positive bottom of end 2b upper surface; The 6b of circulation road export department, extend downwards its above-mentioned positive bottom from end 2b upper surface, arrives the cooling-water flowing channel outlet 8 on the bottom surface that is set at end 2b.
Material for backboard 2 is not particularly limited, and for example can use copper, cupric phosphate, titanium, aluminium and stainless steel etc. with good electric conductivity and thermal conductivity.
Dash plate 3a is configured on the end 2a of backboard 2, and dash plate 3b is configured on the end 2b of backboard 2.Dash plate 3a and dash plate 3b are to be used for cushioning the hydraulic pressure that produced when water coolant etc. and to be applied to power on the backboard when cooling-water flowing passage 6 flows when sputtering target 1 places vacuum, thus inhibition backboard 2 member of warpage upward.
Dash plate 3a makes its bottom surface be bonded on the upper surface of end 2a, thereby is fixed on the backboard 2 by grafting material 5.Dash plate 3b equally also by grafting material 5, makes its bottom surface be bonded on the upper surface of end 2b, thereby is fixed on the backboard 2.On the direction that the circulation road inlet portion 6a that dash plate 3a is positioned at cooling-water flowing passage 6 extends upward from cooling-water flowing feeder connection 7, and on the direction that the 6c of circulation road export department that dash plate 3b is positioned at cooling-water flowing passage 6 extends upward from cooling-water flowing channel outlet 8.
As long as the material of dash plate 3a and dash plate 3b has above-mentioned shock absorption and does not then have special restriction, but from guaranteeing the viewpoint of electroconductibility and thermal conductivity, preferably copper, cupric phosphate, titanium, aluminium and stainless steel etc. and above-mentioned backboard 2 identical materials.
About the thickness of dash plate 3a and dash plate 3b, then there is not special restriction as long as can guarantee above-mentioned shock absorption, in general sputtering operation condition, be generally 0.3～10mm, be preferably 0.5～8mm, 1～6mm more preferably, the spy is preferably 2～5mm.When the thickness of dash plate 3a and dash plate 3b less than 0.3mm, the then above-mentioned shock absorption inadequate situation that becomes is more, when greater than 10mm, be difficult to attach it on the sputtering target, and the distance between target and the base material will break away from preferable range, have the situation of discharge instability.And, as described below, be preferably, roughly become the thickness that a planar degree decides dash plate 3a and dash plate 3b with the surface of sputtering target 1.
Target 4 is cut apart target by three, and the end that promptly is configured in two ends is cut apart the central part of target 4a and end cutting apart target 4b and being configured in central authorities and cut apart target 4c and constitute.
It is that rectangle is tabular that target 4a is cut apart in the end, has the planeform roughly the same with dash plate 3a.The thickness that target 4a is cut apart in the end is identical with the thickness that target 4b is cut apart in the end, and the end is cut apart target 4a and had than central part and cut apart the bigger thickness of target 4c.Target 4a is cut apart in the end, and each roughly is in a planar mode respectively with four sides of dash plate 3a with its four sides, is laminated on the dash plate 3a, and is engaged on the dash plate 3a by grafting material 5.
It equally also is that rectangle is tabular that target 4b is cut apart in the end, has the planeform roughly the same with dash plate 3b.Target 4b is cut apart in the end, and each roughly is in a planar mode respectively with four sides of dash plate 3b with its four sides, is laminated on the dash plate 3b, and is engaged on the dash plate 3b by grafting material 5.
It is that rectangle is tabular that central part is cut apart target 4c, is configured on the central part 2c of backboard 2, engages with backboard 2 by grafting material 5.
As shown in Figure 2, the end is cut apart target 4a, end and is cut apart target 4b and central part and cut apart target 4c and be configured to, and makes the surface of target 4, and promptly the surface of sputtering target 1 roughly is a plane.In a word, roughly be the degree on a surface with the surface of sputtering target 1, decide the end 2a of backboard 2 and 2b and central part 2c, dash plate 3a and 3b, end to cut apart that target 4a and 4b and central part are cut apart target 4c and the thickness of formed grafting material 5 between them.If the surface of sputtering target 1 is roughly a plane, then in cutting part, be difficult to accumulate dust, do not produce particle, do not produce electric arc, so preferred yet.
The end cuts apart target 4a and the end is cut apart between the target 4b, and the end is cut apart target 4b and central part and cut apart and be formed with clearance portion 9 between the target 4c.This clearance portion 9 performances prevent from sputter procedure to expand effect of phenomenons such as the target crackle that produces, particle, electric arc because of the heating of target.
Grafting material 5 is bonded into one with target 4, backboard 2, dash plate 3a and 3b.Grafting material 5 forms knitting layer 5a1 between the end of backboard 2 2a and dash plate 3a, cut apart formation knitting layer 5a2 between target 4a and the dash plate 3a in the end, and between the end of backboard 2 2b and dash plate 3b, form knitting layer 5b1, form knitting layer 5b2 between target 4b and the dash plate 3b and cut apart, and cut apart at the central part 2c of backboard 2 and central part and to form knitting layer 5c between the target 4c in the end.
Material about grafting material 5, as long as target 4, dash plate 3a and 3b, backboard 2 are engaged and can bear sputtering operation and then do not have special restriction, can suitably determine according to these materials, for example can use welding alloies such as In system, Sn system, Zn system, wax material and resin etc.
As long as can engage and bear sputtering operation to backboard 2, dash plate 3a, dash plate 3b and target 4, then the thickness to knitting layer 5a1, knitting layer 5a2, knitting layer 5b1 and knitting layer 5b2 is not particularly limited.But the thickness sum of the thickness of knitting layer 5a1 and knitting layer 5a2, and the thickness sum of the thickness of knitting layer 5b1 and knitting layer 5b2 is preferably 0.25～4.5mm, more preferably 0.5～2.5mm.Therefore consider that knitting layer 5a1 and knitting layer 5a2 have the above-mentioned shock absorption identical with dash plate 3a, if its thickness also can be brought into play good shock absorption when in above-mentioned scope, then can expect to have sufficient conjugation.And, when using grafting material to engage, sandwich between target and the dash plate after grafting material melted or between backboard and the dash plate time, because grafting material is difficult to from flowing out between them, so can increase the thickness of grafting material, the thickness of knitting layer can be increased to when not using dash plate bigger, thereby can strengthen above-mentioned shock absorption by knitting layer.
As long as can engage and bear sputtering operation to backboard 2 and target 4, then the thickness to knitting layer 5c also is not particularly limited.
Sputtering target 1 will play a role with following mechanism.
When using sputtering target 1 to carry out sputter, flow into water coolant from cooling-water flowing feeder connection 7 to cooling-water flowing passage 6, and discharge from cooling-water flowing channel outlet 8.Can cool off the flow that target 4 decides water coolant effectively.
Under common sputtering condition, carry out sputtering operation.When carrying out sputter, owing to Ar ionic bombardment target 4 makes target 4 heatings.At this moment because water coolant flows in cooling-water flowing passage 6, so backboard 2 by this water quench, and the backboard 2 that is cooled absorbs heat by dash plate 3a, dash plate 3b and grafting material 5 from the target 4 of heating, thus cooling target 4.
In this process, the existing sputtering target of dash plate is not set between target and backboard, on target, crack usually.Expression is not provided with the sectional view of the existing sputtering target 21 of dash plate among Fig. 3.Sputtering target 21 has and sputtering target 1 identical construction except not being provided with the dash plate, and it is made of following part: target 24, and cut apart target 24a, end by the end and cut apart target 24b and central part and cut apart target 24c and constituted; Backboard 22 is made of end 22a, end 22b and central part 22c; And grafting material 25.Cooling-water flowing passage 26 with cooling-water flowing feeder connection 27 and cooling-water flowing channel outlet 28 is set on backboard 22.And, roughly become a planar degree with the surface of sputtering target 21, decide the thickness of each member.
When using this sputtering target 21 to carry out operation same as described above, crack especially most cutting apart on the target 24a in the end of the vertical direction that is in cooling-water flowing feeder connection 27.For example, if the cooling-water flowing feeder connection is arranged on the bottom surface of central part, crack common cutting apart on the target at the central part of the vertical direction that is in this cooling-water flowing feeder connection 27.In addition, usually in sputter, bear on the position of target of enormous power and crack,, cut apart target 24a and 24b in the end and will bear huge power especially as sputtering target 21, and when this force part is positioned on the vertical direction of cooling-water flowing feeder connection 27, on this position, be easy to generate crackle.Therefore, in sputtering target 21, cut apart on the target 24a in the end especially easily and crack.This reason that on the target that is in cooling-water flowing feeder connection 27 vertical direction, is easy to generate crackle, be considered to because the hydraulic pressure of the water coolant that in cooling-water flowing passage 26, flows into from cooling-water flowing feeder connection 27 etc., thereby the upper surface that makes end 22a is upward to warpage.
And, think owing to carry out sputter in a vacuum, thus at sputter mesonotal shield 22 upward to warpage, therefore on target 24, crack.In a word, the major cause of target 24 crackles that in sputter, produce, be since backboard 22 upward to warpage.
Relative therewith, sputtering target 1 of the present invention possesses dash plate 3a owing to cutting apart between target 4a and the backboard 2 in the end, so even hydraulic pressure of the water coolant that flows in cooling-water flowing passage 26 from cooling-water flowing feeder connection 27 etc. causes the upper surface of end 22a upward to warpage, dash plate 3a also can bring into play shock absorption, can prevent that the end from cutting apart target 4a and crackle occurring.And, owing to inserted dash plate 3a, cut apart the two-layer knitting layer of formation between target 4a and the backboard 2 in the end, than the situation one deck of the manying knitting layer that does not have dash plate, so cut apart the crackle of target 4a because of the shock absorption of this knitting layer also can prevent the end.Therefore, even as sputtering target 1, the end of bearing enormous power is cut apart on the vertical direction that target 4a is positioned at cooling-water flowing feeder connection 7, especially cuts apart under the situation that target 4a is easy to generate crackle in the end, can prevent that also the end from cutting apart target 4a and crackle occurring.
Because cut apart the effect of the dash plate 3b that inserts between target 4b and the backboard 2 in the end, the situation of cutting apart target 4a with the end is identical, also can prevent the generation of crackle.
And even sputtering target 1 is placed in the vacuum, dash plate 3a and 3b also can suppress the warpage of backboard 2, even and warpage takes place also is delivered to target 4 owing to can suppress its effect, thereby can prevent that crackle from appearring in target 4.
As mentioned above, sputtering target of the present invention is by being arranged on the effect of the dash plate between backboard and the target, preventing owing to produce the target crackle that warpage causes on backboard.So as long as above-mentioned dash plate can play a role, sputtering target then of the present invention is not limited to sputtering target 1, can take various forms.
For the target crackle that the influence that prevents because of water coolant causes, effective means is that the upper portion at the cooling-water flowing feeder connection is provided with dash plate, so can be according to the position that is provided with that dash plate is decided in the position that is provided with of cooling-water flowing feeder connection.For example, when the central part of cooling-water flowing feeder connection, preferably dash plate is provided with the top of portion in the central at backboard.
Dash plate can be bonded on whole of target bottom surface.For example, when target when cutting apart target, can on the bottom surface of respectively cutting apart target, engage a dash plate respectively, also can on a plurality of bottom surfaces of cutting apart target, engage a dash plate.When target is made of a sheet material, can on the whole bottom surface of this target, engage a dash plate, also can engage a plurality of dash plates.If on the whole bottom surface of target, engage dash plate, the target crackle that the backboard warpage that is taken place in the time of then effectively preventing to be placed in the vacuum owing to sputtering target causes.
Sputtering target of the present invention can be provided with plural dash plate lamination.If increase the quantity of laminated dash plate, then owing to also form knitting layer between each dash plate, therefore the quantity of formed knitting layer also increases between target and backboard.As mentioned above, because knitting layer also has the shock absorption identical with dash plate, so if increase laminated dash plate quantity, then the shock absorption that produces because of this knitting layer also becomes greatly, can play the effect that prevents the target crackle jointly with dash plate.When using plural dash plate, the thickness sum of each dash plate is generally 0.3～10mm, is preferably 0.5～8mm, 1～6mm more preferably, and the spy is preferably 2～5mm.The thickness sum of formed knitting layer is preferably 0.25～4.5mm between target and backboard, more preferably 0.5～2.5mm.
And, at dash plate is two when above, thickness between target and dash plate by the formed knitting layer of grafting material, and between between backboard and the dash plate by the thickness of the formed knitting layer of grafting material and between the thickness between dash plate and the dash plate by the formed knitting layer of grafting material (when dash plate is three when above, thickness sum at formed knitting layer more than two-layer between dash plate and the dash plate) sum, be preferably 0.25～4.5mm, more preferably 0.5～2.5mm.
In addition, it is a sheet material that the central part in sputtering target 1 is cut apart target 4c, but the central part in the sputtering target of the present invention is cut apart target, also can be divided into more than two.
[embodiment]
[embodiment 1]
As shown in Figure 4, the target (T) of ITO system with 127mm * 381mm * 4.8mm size, the Cu that has the Cu system backboard (BP) of 150mm * 440mm * 7mm size and have 127mm * 381mm * 0.3mm size are made dash plate carry out lamination, and be that grafting material engages with indium, made sputtering target.The thickness of the knitting layer between target and the dash plate (BN) is 0.01mm, and the thickness of the knitting layer between dash plate and the backboard (BN) is 0.01mm.
[comparative example 1]
Except not using dash plate, other is identical with embodiment 1, thereby has made sputtering target.Knitting layer thickness between target and the backboard is 0.01mm.
[embodiment 2]
Except the thickness of dash plate is made the 0.5mm, other is identical with embodiment 1, thereby has made sputtering target.Knitting layer thickness between target and the dash plate is 0.01mm, and the knitting layer thickness between dash plate and the backboard is 0.01mm.
[embodiment 3]
Except the thickness of dash plate is made the 1mm, other is identical with embodiment 1, thereby has made sputtering target.Knitting layer thickness between target and the dash plate is 0.01mm, and the knitting layer thickness between dash plate and the backboard is 0.01mm.
[embodiment 4]
Except the thickness of dash plate is made the 2mm, other is identical with embodiment 1, thereby has made sputtering target.Knitting layer thickness between target and the dash plate is 0.01mm, and the knitting layer thickness between dash plate and the backboard is 0.01mm.
[embodiment 5]
Except the thickness of dash plate is made the 4mm, other is identical with embodiment 1, thereby has made sputtering target.Knitting layer thickness between target and the dash plate is 0.01mm, and the knitting layer thickness between dash plate and the backboard is 0.01mm.
[embodiment 6]
Except the thickness of dash plate is made the 6mm, other is identical with embodiment 1, thereby has made sputtering target.Knitting layer thickness between target and the dash plate is 0.01mm, and the knitting layer thickness between dash plate and the backboard is 0.01mm.
[embodiment 7]
Except between target and the dash plate and between dash plate and the backboard, to have established outside the wire of Cu system as the spacer folder, other is identical with embodiment 3, thereby has made sputtering target.Knitting layer thickness between target and the dash plate is 0.10mm, and the knitting layer thickness between dash plate and the backboard is 0.15mm.
[embodiment 8]
Except between target and the dash plate and between dash plate and the backboard, to have established outside the wire of Cu system as the spacer folder, other is identical with embodiment 3, thereby has made sputtering target.Knitting layer thickness between target and the dash plate is 0.25mm, and the knitting layer thickness between dash plate and the backboard is 0.25mm.
[embodiment 9]
Except between target and the dash plate and between dash plate and the backboard, to have established outside the wire of Cu system as the spacer folder, other is identical with embodiment 3, thereby has made sputtering target.Knitting layer thickness between target and the dash plate is 0.50mm, and the knitting layer thickness between dash plate and the backboard is 0.50mm.
[embodiment 10]
Except between target and the dash plate and between dash plate and the backboard, established the band of Cu system as the spacer folder, engaged, removed then outside the spacer between target and the dash plate with grafting material, other is identical with embodiment 3, thereby has made sputtering target.Knitting layer thickness between target and the dash plate is 0.80mm, and the knitting layer thickness between dash plate and the backboard is 0.50mm.
[embodiment 11]
Except between target and dash plate, having established the wire of Cu system as the spacer folder, to establish outside the band of Cu system as the spacer folder between dash plate and the backboard, other is identical with embodiment 3, thereby has made sputtering target.Knitting layer thickness between target and the dash plate is 1.50mm, and the knitting layer thickness between dash plate and the backboard is 1.00mm.
[comparative example 2]
Except not using dash plate, outside the Cu system wire of having established different diameter between target and the backboard as the spacer folder, other is identical with embodiment 8, thereby has made sputtering target.The thickness of the knitting layer between target and the backboard is 0.50mm.
[comparative example 3]
Except not using dash plate, outside the Cu system wire of having established different diameter between target and the backboard as the spacer folder, other is identical with embodiment 9, thereby has made sputtering target.Knitting layer thickness between target and the backboard is 1.00mm.
[comparative example 4]
Except not using dash plate, outside the band of the Cu system of having established different thickness between target and the backboard as the spacer folder, other is identical with embodiment 10, thereby has made sputtering target.Knitting layer thickness between target and the backboard is 2.00mm.
[embodiment 12]
Except the thickness with dash plate is set as 2mm, and between target and the backboard folder establish outside two dash plates, other is identical with embodiment 1, thereby has made sputtering target.The thickness of the knitting layer between target and the dash plate is 0.01mm, and the knitting layer thickness between dash plate and the backboard is 0.01mm, and the knitting layer thickness between two dash plates is 0.01mm.
[embodiment 13]
Except the thickness with dash plate is set as 2mm, and will between target and backboard, press from both sides the dash plate of establishing and be set as three, establishing outside the band of Cu system as the spacer folder between target and the dash plate, between dash plate and the backboard and between each dash plate, other is identical with embodiment 1, thereby has made sputtering target.The thickness of the knitting layer between target and the dash plate is 1.00mm, and the thickness of the knitting layer between dash plate and the backboard is 1.00mm, and the knitting layer thickness between two dash plates respectively is 0.50mm.
[embodiment 14]
Except the thickness with dash plate is set as 2mm, and will between target and backboard, press from both sides the dash plate of establishing and be set as three, establishing outside the band of Cu system as the spacer folder between target and the dash plate, between dash plate and the backboard and between each dash plate, other is identical with embodiment 1, thereby has made sputtering target.Knitting layer thickness between target and the dash plate is 1.50mm, and the knitting layer thickness between dash plate and the backboard is 1.50mm, and the knitting layer thickness between two dash plates respectively is 0.75mm.
[embodiment 15]
Except dash plate being changed by the Al manufacturing, other is identical with embodiment 9, thereby has made sputtering target.The thickness of the knitting layer between target and the dash plate is 0.50mm, and the knitting layer thickness between dash plate and the backboard is 0.50mm.
[embodiment 16]
Except dash plate being changed by the SUS manufacturing, other is identical with embodiment 9, thereby has made sputtering target.Knitting layer thickness between target and the dash plate is 0.50mm, and the knitting layer thickness between dash plate and the backboard is 0.50mm.
[embodiment 17]
Except target being changed by the glass manufacturing, other is identical with embodiment 9, thereby has made sputtering target.Knitting layer thickness between target and the dash plate is 0.50mm, and the knitting layer thickness between dash plate and the backboard is 0.50mm.
[comparative example 5]
Except not using dash plate, target is changed by outside the glass manufacturing, other is identical with embodiment 1, thereby has made sputtering target.Knitting layer thickness between target and the backboard is 0.01mm.
[embodiment 18]
Except target is changed by Al
2O
3Outside the manufacturing, other is identical with embodiment 9, thereby has made sputtering target.Knitting layer thickness between target and the dash plate is 0.50mm, and the knitting layer thickness between dash plate and the backboard is 0.50mm.
[comparative example 6]
Except not using dash plate, target is changed by Al
2O
3Outside the manufacturing, other is identical with embodiment 1, thereby has made sputtering target.Knitting layer thickness between target and the backboard is 0.01mm.
[embodiment 19]
Except target is changed by SnO
2-Sb
2O
3Outside the manufacturing, other is identical with embodiment 9, thereby has made sputtering target.The thickness of the knitting layer between target and the dash plate is 0.50mm, and the knitting layer thickness between dash plate and the backboard is 0.50mm.
[comparative example 7]
Except not using dash plate, target is changed by SnO
2-Sb
2O
3Outside the manufacturing, other is identical with embodiment 1, thereby has made sputtering target.Knitting layer thickness between target and the backboard is 0.01mm.
[embodiment 20]
Use is provided with the sputter equipment (ULVAC system type sputter equipment in upright arrangement SDP series is used) in water coolant circulation gap, as shown in Figure 6, with six ITO systems cut apart target 44 (two ends cut apart target: 300mm * 100mm * 9mm, cut apart target: 300mm * 470mm * 7mm) be arranged on the backboard 42 of Cu system beyond the two ends, two ends cut apart target below, clamp the wire dash plate 43 of lamination Cu system (300mm * 100mm * 3mm) again as spacer, with indium is that grafting material engages, and having made the surface roughly becomes a planar sputtering target (sputtering target 41A).The thickness of the knitting layer between target and the dash plate is 0.50mm, and the knitting layer thickness between dash plate and the backboard is 0.05mm.
[comparative example 8]
As shown in Figure 7, except not using dash plate, other is identical with embodiment 20, thereby has made sputtering target (sputtering target 41B).Knitting layer thickness between target and the backboard is 0.50mm.
(resistance to pressure test)
Use following method, the sputtering target of making in embodiment 1～19 and the comparative example 1～7 has been carried out the resistance to pressure test.As shown in Figure 5, the backboard 32 usefulness screws of sputtering target are fixed on the anchor clamps 10, and on the whole back side of backboard, apply equipressure.Import nitrogen in space 11, toward back plate 32 is exerted pressure, and has measured the pressure when crackle occurring on target 34.The result who has represented embodiment 1～11 and comparative example 1～4 in table 1 has represented the result of embodiment 12～19 and comparative example 5～7 in the table 2.
Can find from the result of embodiment 1～6 and comparative example 1, when sputtering target uses the dash plate of 0.3mm, can bear 4.0Kgf/cm
2Above pressure when using the dash plate of 1.0mm, can bear 5.0Kgf/cm
2Above pressure when using the dash plate of 2.0mm, can bear 5.5Kgf/cm
2Above pressure.
Can find from the result of embodiment 3 and 7～11, even the thickness of the employed dash plate of sputtering target is identical, if but the increase of the thickness sum of knitting layer, then the pressure that can bear also increases.
By comparing embodiment 8 and comparative example 2, comparing embodiment 9 and comparative example 3, and comparing embodiment 10 and comparative example 4 can be found, thickness sum as if knitting layer in sputtering target increases, then the pressure that can bear also increases, and the pressure that can bear when not using dash plate when having used dash plate is bigger.
Can find from the result of embodiment 12～14, be set as more than two by number, and can bear bigger pressure the employed dash plate of sputtering target.And can find from the result of embodiment 9 and 15～16,, also can obtain same effect even use the dash plate of differing materials.
By comparing embodiment 17 and comparative example 5, comparing embodiment 18 and comparative example 6, and comparing embodiment 19 and comparative example 7 can find, even use the target of differing materials, also can obtain same dash plate effect.
(camber test)
Use following method, the sputtering target (sputtering target 41B) of making in the sputtering target (sputtering target 41A) made among the embodiment 20 and the comparative example 8 has been carried out camber test.As shown in Figure 8, on worktable 50, place sleeper 51, on sleeper 51, place sputtering target 41, make sleeper 51 be positioned at sputtering target 41 central part below, and at the two ends of sputtering target 41 tighten the screws 52 equably, sputtering target 41 is fixed on the worktable 50.By further tightening two screws 52 equably, make sputtering target 41 warpage 5mm, and observed whether produced crackle this moment.Its result is, do not crack on sputtering target 41A, produced crackle on the target and cut apart in the end of sputtering target 41B.
[table 1]
[table 2]
Claims (9)
1, a kind of sputtering target is characterized in that, comprising: target; Backboard; At least one dash plate, it is set between described target and the described backboard; Grafting material is used for described target, backboard and dash plate are bonded into one.
2, sputtering target as claimed in claim 1, described target is made of a plurality of targets of cutting apart, at least one this cut apart target below, lamination has at least one to have the described dash plate of cutting apart the roughly the same planeform of target with this.
3, sputtering target as claimed in claim 2, described a plurality of targets of cutting apart are configured to, and make the surface of described sputtering target roughly be in a plane.
4, as any described sputtering target in the claim 1 to 3, the material of described dash plate is identical with the material of described backboard.
5, as any described sputtering target in the claim 1 to 4, the thickness of described dash plate is 0.5～10mm.
6, as any described sputtering target in the claim 1 to 5, wherein,
When dash plate is one, thickness between described target and described dash plate by the formed knitting layer of described grafting material, and the summation by the thickness of the formed knitting layer of described grafting material between described backboard and described dash plate is 0.25～4.5mm;
When dash plate is two when above, thickness between described target and described dash plate by the formed knitting layer of described grafting material, and the thickness by the formed knitting layer of described grafting material between described backboard and described dash plate, and the summation by the thickness of the formed knitting layer of described grafting material between described dash plate and dash plate is 0.25～4.5mm.
7, as any described sputtering target in the claim 1 to 6, the material of described target is the material of making by powder metallurgy.
8, as any described sputtering target in the claim 1 to 6, the material of described target is a pottery.
9, as any described sputtering target in the claim 1 to 8, described backboard possesses the cooling-water flowing passage, is used for circulation described target is carried out the refrigerative water coolant.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008-102350 | 2008-04-10 | ||
| JP2008102350A JP5198925B2 (en) | 2008-04-10 | 2008-04-10 | Sputtering target |
| JP2008102350 | 2008-04-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101555585A true CN101555585A (en) | 2009-10-14 |
| CN101555585B CN101555585B (en) | 2013-02-13 |
Family
ID=41173862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910134430 Active CN101555585B (en) | 2008-04-10 | 2009-04-10 | Sputtering target |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5198925B2 (en) |
| CN (1) | CN101555585B (en) |
| TW (1) | TW201000660A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108950491A (en) * | 2011-03-03 | 2018-12-07 | 应用材料公司 | It is used to form the method and device of cylindrical target component |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6021861B2 (en) * | 2014-08-06 | 2016-11-09 | Ｊｘ金属株式会社 | Sputtering target-backing plate assembly |
| JP7311290B2 (en) * | 2019-03-27 | 2023-07-19 | Ｊｘ金属株式会社 | Segmented sputtering target and manufacturing method thereof |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03277770A (en) * | 1990-03-28 | 1991-12-09 | Tanaka Kikinzoku Kogyo Kk | Sputtering target and its production |
| JPH05195215A (en) * | 1992-01-14 | 1993-08-03 | Mitsubishi Materials Corp | Ceramic sputtering target |
| DE4242079A1 (en) * | 1992-12-14 | 1994-06-16 | Leybold Ag | Target for a cathode arranged in an evacuable process chamber floodable with a process gas |
| JPH07133189A (en) * | 1993-11-09 | 1995-05-23 | Mitsubishi Chem Corp | Production of oxide thin film |
| US5439500A (en) * | 1993-12-02 | 1995-08-08 | Materials Research Corporation | Magneto-optical alloy sputter targets |
| JPH11189867A (en) * | 1997-12-24 | 1999-07-13 | Olympus Optical Co Ltd | Sputtering target |
| JP4000813B2 (en) * | 2001-10-12 | 2007-10-31 | 東ソー株式会社 | Sputtering target |
| JP2003147518A (en) * | 2001-11-06 | 2003-05-21 | Mitsui Mining & Smelting Co Ltd | Sputtering target |
| JP2004307989A (en) * | 2003-02-21 | 2004-11-04 | Japan Aviation Electronics Industry Ltd | Target for ion beam sputtering target and ion beam sputtering system comprising the same |
| KR20070063050A (en) * | 2004-05-18 | 2007-06-18 | 미츠이 긴조쿠 고교 가부시키가이샤 | Spattering target |
-
2008
- 2008-04-10 JP JP2008102350A patent/JP5198925B2/en active Active
-
2009
- 2009-03-23 TW TW98109332A patent/TW201000660A/en unknown
- 2009-04-10 CN CN 200910134430 patent/CN101555585B/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108950491A (en) * | 2011-03-03 | 2018-12-07 | 应用材料公司 | It is used to form the method and device of cylindrical target component |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201000660A (en) | 2010-01-01 |
| CN101555585B (en) | 2013-02-13 |
| JP5198925B2 (en) | 2013-05-15 |
| JP2009249721A (en) | 2009-10-29 |
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