CN101555137B - (TiB2+TiC)/Ti3SiC2Complex phase ceramic material and preparation method thereof - Google Patents
(TiB2+TiC)/Ti3SiC2Complex phase ceramic material and preparation method thereof Download PDFInfo
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- CN101555137B CN101555137B CN2009100277634A CN200910027763A CN101555137B CN 101555137 B CN101555137 B CN 101555137B CN 2009100277634 A CN2009100277634 A CN 2009100277634A CN 200910027763 A CN200910027763 A CN 200910027763A CN 101555137 B CN101555137 B CN 101555137B
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- 229910010293 ceramic material Inorganic materials 0.000 title claims abstract description 12
- 229910033181 TiB2 Inorganic materials 0.000 title claims abstract description 6
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 title claims description 4
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 51
- 239000000843 powder Substances 0.000 claims abstract description 36
- 238000005245 sintering Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000002994 raw material Substances 0.000 claims abstract description 10
- 239000011159 matrix material Substances 0.000 claims abstract description 9
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 8
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 7
- 239000010439 graphite Substances 0.000 claims abstract description 7
- 230000001681 protective effect Effects 0.000 claims abstract description 5
- 238000007731 hot pressing Methods 0.000 claims abstract description 4
- 238000010297 mechanical methods and process Methods 0.000 claims abstract description 3
- 239000010936 titanium Substances 0.000 claims description 50
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 238000011533 pre-incubation Methods 0.000 claims description 7
- 230000000630 rising effect Effects 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000010792 warming Methods 0.000 claims description 5
- 238000005303 weighing Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 2
- 230000003014 reinforcing effect Effects 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 2
- 229910009817 Ti3SiC2 Inorganic materials 0.000 abstract 2
- 238000000227 grinding Methods 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 238000003825 pressing Methods 0.000 abstract 1
- 230000002195 synergetic effect Effects 0.000 abstract 1
- 229910000048 titanium hydride Inorganic materials 0.000 abstract 1
- 239000002131 composite material Substances 0.000 description 13
- 239000000919 ceramic Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 238000005728 strengthening Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000013001 point bending Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 108010022579 ATP dependent 26S protease Proteins 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- HPNSNYBUADCFDR-UHFFFAOYSA-N chromafenozide Chemical compound CC1=CC(C)=CC(C(=O)N(NC(=O)C=2C(=C3CCCOC3=CC=2)C)C(C)(C)C)=C1 HPNSNYBUADCFDR-UHFFFAOYSA-N 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
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Abstract
The invention relates to a (TiB)2+TiC)/Ti3SiC2A complex phase ceramic material and a preparation method thereof. The multiphase ceramic material is made of plate/column TiB2Equiaxed TiC reinforcing phase and layered Ti3SiC2A matrix composition of wherein TiB2The TiC accounts for 5-20% of the total volume of the material, and the TiC accounts for 10-15% of the total volume of the material. The raw material TiH2Powder, Si powder, graphite powder and B4The powder C is weighed according to the molar ratio of (3.27-4.49) to (1.04-1.21) to 2 to (0.07-0.43), the raw materials are mixed uniformly by a physical mechanical method, then are put into a graphite grinding tool for cold pressing and molding, and are sintered in a hot pressing furnace with protective atmosphere. The invention has simple process and low sintering temperature, and the material has excellent performance due to the synergistic effect of two different toughening phases and a reinforcing and toughening mechanism in the material.
Description
Technical field:
The present invention relates to ceramic matric composite and preparation method thereof, be specially the in-situ hot pressing sintering and synthesize by plate/column TiB
2With many first enhanced Ti such as axle shape TiC such as grade
3SiC
2Base complex phase ceramic material and preparation method thereof.
Background technology:
Ti
3SiC
2Be the representative of ternary layered processable ceramic MAX, integrate metal and ceramic characteristics, 26S Proteasome Structure and Function character, have characteristics such as low density, high-modulus, anti-thermal shock, favorable conductive thermal conductivity, also have than conventional lubrication material graphite and MoS simultaneously
2Lower coefficient of friction and better self-lubricating property, the utmost point promises to be high-temperature structural material, the electrode materials in the molten metal, processable ceramics material, self-lubricating material and the electrode electricity brush material of a new generation.In addition, Ti in the TR of 300-850K
3SiC
2Thermoelectric power almost nil, be unique up to now material with this performance, will aspect the accurate mensuration of thermoelectric material important application arranged.
But, Ti
3SiC
2Hardness and creep strength under the normal temperature are lower, and wear resistance and oxidation-resistance are relatively poor, and this application that has seriously limited it is logical.Complex phaseization, be the effective way of improving material mechanical performance, realizing strengthening and toughening from toughness reinforcing structure.At present existing Al
2O
3, TiC, SiC, c-BN, TiB
2, ZrO
2Deng being introduced into Ti as wild phase
3SiC
2To improve its performance (Hu C F, Zhou Y C, Bao Y W, Wan D T.Al
2O
3Strengthen Ti
3SiC
2The frictional behaviour of composite diphase material [J]. American Ceramic Society's magazine, 2006,89 (11): 3456-3461; Zhang J F, Wang L J, Jiang W, Chen L D.TiC content is sent out the synthetic Ti of original position to plasma discharging
3SiC
2-TiC composite diphase material microstructure and Effect on Performance [J]. Materials Science and Engineering A, 2008,487 (1-2): 137-143; Zhang J F, Wang L J, Shi L, Jiang W, Chen L D. plasma discharging legal system is equipped with Ti
3SiC
2-SiC nanometer composite diphase material [J]. material wall bulletin, 2007,56 (3): 241-244; Benko E, Klimczyk P, Mackiewicz S, Barr T L, Piskorska E.cBN-Ti
3SiC
2Composite diphase material [J]. the character of diamond-film-like and application, 2004,13 (3): 521-525; Zhou W B, Mei B C, Zhu J Q. pressure sintering original position is synthesized Ti
3SiC
2/ TiB
2Composite diphase material [J]. Wuhan University of Technology's journal natural science edition, 2008,23 (6): 863-865; Shi S L, Pan W. plasma discharging legal system is equipped with the toughness reinforcing Ti of 3Y-TZP
3SiC
2[J]. Materials Science and Engineering, 2007,447 (1-2): 303-306), but adopt a kind of tough phase usually, strengthening and toughening mechanism is single, and the strengthening and toughening effect is limited.(Zhou Y C. is at TiO for Chen J X, Li J L for Chen etc.
2The synthetic Ti of original position in the-Al-C system
3AlC
2/ TiC-Al
2O
3Composite diphase material [J]. Materials science and technology, 2006,22 (4): 455-458) utilizing 3TiO
2The combustion reactions of-5Al-2C system prepares Ti
3AlC
2-Al
2O
3During matrix material, accident has made Ti
3AlC
2/ TiC-Al
2O
3Matrix material, this bill of material reveals than pure Ti
3AlC
2Hardness and intensity that pottery is higher, but fracture toughness property slightly descends.Zan etc. (Zan Q F, Dong L M, Wang C, Wang C A, Huang Y. passes through to stratiform Al
2O
3Introduce SiC whisker REINFORCED Al
2O
3/ Ti
3SiC
2The mechanical property of complex phase ceramic [J]. pottery is international, 2007,33:385-388) with the SiC whisker as 2 grades of toughness reinforcing phases, join the Al of multilayered structure malleableize
2O
3/ Ti
3SiC
2The Al of multilayer ceramic
2O
3In the layer, because 1 grade of Toughening Mechanism (multilayered structure malleableize), 2 grades of Toughening Mechanism (crystal whisker toughened) and the synergy of the two, bill of material reveals excellent mechanical property: flexural strength 688MPa, work of rupture 2583Jm
-2, but adopting mechanical mixing to introduce wild phase, preparation technology is more complicated also.
Summary of the invention:
The objective of the invention is provides a kind of (TiB for the deficiency of improving existing technology
2+ TiC)/Ti
3SiC
2Diphase ceramic material, another object of the present invention have provided the preparation method of above-mentioned diphase ceramic material.
Technical scheme of the present invention is: utilize original position synthetic method preparation (TiB
2+ TiC)/Ti
3SiC
2Diphase ceramic material, its ultimate principle is TiH
2At high temperature decompose generation Ti, Ti and Si, C reaction generate Ti then
3SiC
2Matrix, simultaneously Ti also with B
4C generates TiB through the reaction original position
2With the associating wild phase of two kinds of different enhanced mechanism of different-shape of TiC, thus a step be prepared into (TiB
2+ TiC)/Ti
3SiC
2Material.(the TiB that records by Archimedes's method
2+ TiC)/Ti
3SiC
2The density of block materials is greater than 99%.
Concrete technical scheme of the present invention is: a kind of (TiB
2+ TiC)/Ti
3SiC
2Diphase ceramic material is characterized in that: by plate/column TiB
2With axle shape TiC wild phase such as grade and stratiform Ti
3SiC
2Matrix is formed, and wherein TiB2 accounts for 5～20% of material TV, and titanium carbide accounts for 10～15% of material TV.
The present invention also provides the method for preparing above-mentioned matrix material, and its concrete steps are: with raw material TiH
2Powder, Si powder, Graphite Powder 99 and B
4The C powder is n (TiH in molar ratio
2): n (Si): n (C): n (B
4C) be (3.27～4.49): (1.04～1.21): 2: (0.07～0.43) weighing; Raw material powder is loaded on the surface and scribbles coldmoulding in the graphite jig of supercoat, sintering in being connected with the hot pressing furnace of protective atmosphere behind the physical mechanical method mixing.
Preferred described B
4The C powder is that size range is 3～10 powder and micron; Described TiH
2Powder and Si powder degree are-300 orders.Graphite Powder 99 is that size range is 5～20 powder and micron.
Preferred coldmoulding pressure is 1～3MPa.Temperature rise rate is 10～50 ℃/min in the preferred sintering process; Sintering temperature is 1400～1600 ℃; Sintering time is that 1.5～2 hours, sintering pressure are 22～25MPa.
The present invention does not have the pre-incubation of pressure 50～60 minutes when preferably in sintering process, being warming up to 800～900 ℃.Speed with 50 ℃ of supercharging 1.5～2.5MPa of every rising after the pre-incubation of nothing pressure adds to sintering pressure.Protective atmosphere in the preferred sintering process is an argon gas.
The present invention provide a kind of mechanical property good, control simple, easy control of process conditions, densification (TiB that cost is low
2+ TiC)/Ti
3SiC
2Original position synthetic materials and preparation method thereof contains the TiB of plate/column in the material
2With the two kinds of wild phases of TiC and the corresponding two kinds of mechanism and enhancement mechanism that wait the axle shape.
Beneficial effect:
1. with TiH
2As the raw material that the Ti source is provided; It decomposes pure, tiny, the highly active Ti powder of generation fully before 900 ℃ in heat-processed; Avoided traditional directly with the Ti powder during as the titanium source, the inevitable oxidation of Ti powder is to the disadvantageous effect of material composition, structure and performance.Simultaneously, TiH
2Price is low and be easy to preserve than the Ti powder.
2.TiH
2Decompose pure, tiny, the highly active Ti powder that produces, in heat-processed subsequently, generate Ti with Si, C reaction
3SiC
2Matrix, while and B
4C reacts original position hard board/column TiB2 and the two kinds of wild phases of TiC that wait the axle shape, thereby a step makes (TiB
2+ TiC)/Ti
3SiC
2Diphase ceramic material, the simple cost of technology is low.
3. make (TiB
2+ TiC)/Ti
3SiC
2The composite diphase material uniform microstructure is by stratiform Ti
3SiC
2Crystal grain, plate/column TiB
2Crystal grain constitutes with waiting axle shape TiC crystal grain, and the wild phase granular boundary is pollution-free, plate/column TiB
2And etc. interaction between axle shape TiC two kinds of tough phases, two kinds of collaborative each other couplings of strengthening and toughening mechanism significantly improve the bending strength of material and fracture toughness property.
4. because TiB
2All has good electrical conductivity with TiC, (the TiB that makes
2+ TiC)/Ti
3SiC
2Composite diphase material has still kept good electrical conductivity, can be used as electrode or brush material.
5. utilize TiB
2With the characteristics of TiC high firmness, (TiB
2+ TiC)/Ti
3SiC
2The hardness and the wear resistance of composite diphase material significantly improve.
6. utilize TiB
2In the B element, (the TiB that makes
2+ TiC)/Ti
3SiC
2Composite diphase material surface when oxidation can generate fine and close borosilicate passivation layer, thereby improves the oxidation-resistance of material.
Description of drawings:
Fig. 1 is embodiment 1 gained (TiB
2+ TiC)/Ti
3SiC
2The XRD figure spectrum of composite diphase material, wherein ★ represents Ti
3SiC
2, ◆ represent TiB
2, ▲ represent TiC.
Fig. 2 is embodiment 1 gained matrix material (TiB
2+ TiC)/Ti
3SiC
2The stereoscan photograph of the fracture of composite diphase material.
Embodiment:
Embodiment 1:
N (TiH in molar ratio
2): n (Si): n (C): n (B
4C)=and 3.98: 1.14: 2: 0.28 takes by weighing raw material TiH
2Powder (300 order powder), Si powder (300 order powder), Graphite Powder 99 (10 powder and micron) and B
4Behind the C powder (5 powder and micron); In the Vilaterm jar, do mixing 24h is placed on the surface and scribbles coldmoulding in the graphite jig of BN; Hot pressed sintering in argon atmospher; Rising to 900 ℃ with the speed of 50 ℃/min does not have the pre-incubation of pressure 1 hour, and the speed with 20 ℃/min is warming up to 1500 ℃ then, is incubated 2h after boosting to 25MPa with the rate of pressurization of 50 ℃ of supercharging 2MPa of every rising simultaneously.The density that obtains block materials reaches 99.8%, and the three-point bending resistance of test material is powerful in 680MPa on universal testing machine, adopts fracture toughness property that monolateral breach beam method records material greater than 8.5MPam
1/2Carry out XRD analysis to making product, product as shown in Figure 1 is by Ti
3SiC
2, TiB
2Form with TiC.The product fracture is carried out sem analysis, material uniform microstructure as shown in Figure 2, stratiform Ti
3SiC
2, plate/column TiB
2Axle shape TiC crystal grain is high-visible with waiting, and crystal grain is tiny.
Embodiment 2:
N (TiH in molar ratio
2): n (Si): n (C): n (B
4C)=and 3.59: 1.09: 2: 0.17 takes by weighing raw material TiH
2Powder (300 order powder), Si powder (300 order powder), Graphite Powder 99 (15 powder and micron) and B
4C powder (10 powder and micron) back is done in the Vilaterm jar and is mixed 24h and be placed on the surface and scribble coldmoulding in the graphite jig of BN; Hot pressed sintering in argon atmospher; Speed with 50 ℃/min rises to 900 ℃ of nothing pressures pre-incubation 1 hour; Speed with 20 ℃/min is warming up to 1500 ℃ then, is incubated 2h after simultaneously boosting to 25MPa with the rate of pressurization of 50 ℃ of supercharging 2MPa of every rising.The density that obtains block materials reaches 99.8%, and the three-point bending resistance intensity of test material adopts fracture toughness property that monolateral breach beam method records material greater than 8.5MPam greater than 680MPa on universal testing machine
1/2
Embodiment 3:
N (TiH in molar ratio
2): n (Si): n (C): n (B
4C)=and 3.59: 1.09: 2: 0.17 takes by weighing raw material TiH
2Powder (300 order powder), Si powder (300 order powder), Graphite Powder 99 (15 powder and micron) and B
4C powder (3 powder and micron) back is done in the Vilaterm jar and is mixed 20h and be placed on the surface and scribble coldmoulding in the graphite jig of BN; Hot pressed sintering in argon atmospher; Speed with 30 ℃/min rises to 800 ℃ of nothing pressures pre-incubation 50 minutes; Speed with 20 ℃/min is warming up to 1600 ℃ then, is incubated 2h after simultaneously boosting to 22MPa with the rate of pressurization of 50 ℃ of supercharging 1.5MPa of every rising.The density that obtains block materials reaches 99.9%, and the three-point bending resistance intensity of test material adopts fracture toughness property that monolateral breach beam method records material greater than 9MPam greater than 680MPa on universal testing machine
1/2
Claims (5)
1. (TiB
2+ TiC)/Ti
3SiC
2Diphase ceramic material is characterized in that: by plate/column TiB
2With axle shape TiC wild phase such as grade and stratiform Ti
3SiC
2Matrix is formed, and wherein TiB2 accounts for 5～20% of material TV, and titanium carbide accounts for 10～15% of material TV.
2. method for preparing diphase ceramic material as claimed in claim 1, its concrete steps are: with raw material TiH
2Powder, Si powder, Graphite Powder 99 and B
4The C powder is n (TiH in molar ratio
2): n (Si): n (C): n (B
4C) be 3.27～4.49: 1.04～1.21: 2: 0.07～0.43 weighing; Raw material powder is loaded on the surface and scribbles coldmoulding in the graphite jig of supercoat, sintering in being connected with the hot pressing furnace of protective atmosphere behind the physical mechanical method mixing; There are not the pre-incubation of pressure 50～60 minutes when wherein being warming up to 800～900 ℃ in the sintering process; Speed with 50 ℃ of supercharging 1.5～2.5MPa of every rising after the pre-incubation of nothing pressure adds to sintering pressure; Sintering pressure is 22～25MPa; Temperature rise rate is 10～50 ℃/min in the sintering process; Sintering temperature is 1400～1600 ℃; Sintering time is 1.5～2 hours.
3. according to the described method of claim 2, it is characterized in that described B
4The C powder is that size range is 3～10 powder and micron; Described Graphite Powder 99 is that size range is 5～20 powder and micron; Described TiH
2Powder and Si powder degree are-300 orders.
4. according to the described method of claim 2, it is characterized in that described coldmoulding pressure is 1～3MPa.
5. according to the described method of claim 2, it is characterized in that protective atmosphere is an argon gas.
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|---|---|---|---|
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|---|---|---|---|
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101037771A (en) * | 2007-02-09 | 2007-09-19 | 上海工程技术大学 | Method for preparing TiC-TiB2 nano-micrometre multiple phase ceramic coating |
| CN101265107A (en) * | 2008-04-22 | 2008-09-17 | 武汉理工大学 | Multi-element diphase ceramic material used for conductive crucible and preparation method thereof |
-
2009
- 2009-05-20 CN CN2009100277634A patent/CN101555137B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101037771A (en) * | 2007-02-09 | 2007-09-19 | 上海工程技术大学 | Method for preparing TiC-TiB2 nano-micrometre multiple phase ceramic coating |
| CN101265107A (en) * | 2008-04-22 | 2008-09-17 | 武汉理工大学 | Multi-element diphase ceramic material used for conductive crucible and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| Hitoshi Taimatsu，et al.，.Synthesis of TiB2-TiC-Ti3SiC2 Composites by Reactive Hot Pressing of B4C-SiC-Ti Powder Mixtures.《Materials Transactions》.2008,第49卷(第10期),第2335-2340页. * |
| JP特开2008-78434A 2008.04.03 |
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