CN101546795A - 半导体发光元件 - Google Patents
半导体发光元件 Download PDFInfo
- Publication number
- CN101546795A CN101546795A CN200810027087A CN200810027087A CN101546795A CN 101546795 A CN101546795 A CN 101546795A CN 200810027087 A CN200810027087 A CN 200810027087A CN 200810027087 A CN200810027087 A CN 200810027087A CN 101546795 A CN101546795 A CN 101546795A
- Authority
- CN
- China
- Prior art keywords
- emitting elements
- semiconductor light
- light
- refractive index
- described semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 72
- 239000000084 colloidal system Substances 0.000 claims abstract description 34
- 238000000576 coating method Methods 0.000 claims description 34
- 239000011248 coating agent Substances 0.000 claims description 33
- 238000012856 packing Methods 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 7
- 239000000741 silica gel Substances 0.000 claims description 5
- 229910002027 silica gel Inorganic materials 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 claims description 4
- 125000000524 functional group Chemical group 0.000 claims description 3
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims description 2
- 125000003368 amide group Chemical group 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 150000003254 radicals Chemical class 0.000 claims description 2
- 239000004020 conductor Substances 0.000 abstract description 5
- 238000004806 packaging method and process Methods 0.000 abstract 3
- 230000002093 peripheral effect Effects 0.000 abstract 2
- 238000000605 extraction Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000006978 adaptation Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (16)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008100270876A CN101546795B (zh) | 2008-03-25 | 2008-03-25 | 半导体发光元件 |
US12/230,193 US7750362B2 (en) | 2008-03-25 | 2008-08-26 | Semiconductor light-emitting device |
DE202008014378U DE202008014378U1 (de) | 2008-03-25 | 2008-10-29 | Lichtemittierendes Halbleitergerät |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008100270876A CN101546795B (zh) | 2008-03-25 | 2008-03-25 | 半导体发光元件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101546795A true CN101546795A (zh) | 2009-09-30 |
CN101546795B CN101546795B (zh) | 2011-02-16 |
Family
ID=40349078
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100270876A Expired - Fee Related CN101546795B (zh) | 2008-03-25 | 2008-03-25 | 半导体发光元件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7750362B2 (zh) |
CN (1) | CN101546795B (zh) |
DE (1) | DE202008014378U1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102130247A (zh) * | 2010-01-14 | 2011-07-20 | Lg伊诺特有限公司 | 发光器件芯片、发光器件封装 |
CN104981915A (zh) * | 2013-02-06 | 2015-10-14 | 株式会社小糸制作所 | 发光模块 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101028195B1 (ko) * | 2010-01-18 | 2011-04-11 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 이를 구비한 라이트 유닛 |
JP5691681B2 (ja) * | 2010-03-15 | 2015-04-01 | 日亜化学工業株式会社 | 発光装置 |
GB2479920A (en) * | 2010-04-30 | 2011-11-02 | Led Semiconductor Co Ltd | Two-layer encapsulation structure for light-emitting diode |
CN102834941B (zh) * | 2010-12-28 | 2016-10-12 | 日亚化学工业株式会社 | 发光装置及其制造方法 |
USD703159S1 (en) * | 2011-02-07 | 2014-04-22 | Nichia Corporation | Light emitting diode |
TWI451605B (zh) * | 2011-03-08 | 2014-09-01 | Lextar Electronics Corp | 具有金屬反射面與散熱塊之發光二極體結構 |
US8629466B2 (en) * | 2012-05-22 | 2014-01-14 | Hong Kong Applied Science and Technology Research Institute Company Limited | Lighting device |
USD731987S1 (en) * | 2012-12-28 | 2015-06-16 | Nichia Corporation | Light emitting diode |
CN104566229B (zh) * | 2013-10-15 | 2016-06-08 | 深圳市光峰光电技术有限公司 | 波长转换装置的制造方法 |
WO2018199901A1 (en) * | 2017-04-24 | 2018-11-01 | Hewlett-Packard Development Company, L.P. | Micro light-emitting diode display with 3d orifice plating and light filtering |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1212676C (zh) * | 2001-04-12 | 2005-07-27 | 松下电工株式会社 | 使用led的光源装置及其制造方法 |
JP4360858B2 (ja) * | 2003-07-29 | 2009-11-11 | シチズン電子株式会社 | 表面実装型led及びそれを用いた発光装置 |
KR100770424B1 (ko) * | 2006-12-13 | 2007-10-26 | 삼성전기주식회사 | 발광 다이오드 패키지 및 그 제조 방법 |
JP4795293B2 (ja) * | 2007-03-30 | 2011-10-19 | ローム株式会社 | 半導体発光装置 |
TWI347687B (en) * | 2007-07-13 | 2011-08-21 | Lite On Technology Corp | Light-emitting device with open-loop control |
-
2008
- 2008-03-25 CN CN2008100270876A patent/CN101546795B/zh not_active Expired - Fee Related
- 2008-08-26 US US12/230,193 patent/US7750362B2/en not_active Expired - Fee Related
- 2008-10-29 DE DE202008014378U patent/DE202008014378U1/de not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102130247A (zh) * | 2010-01-14 | 2011-07-20 | Lg伊诺特有限公司 | 发光器件芯片、发光器件封装 |
CN102130247B (zh) * | 2010-01-14 | 2014-09-24 | Lg伊诺特有限公司 | 发光器件芯片、发光器件封装 |
US9136445B2 (en) | 2010-01-14 | 2015-09-15 | Lg Innotek Co., Ltd. | Light emitting device chip, light emitting device package |
CN104981915A (zh) * | 2013-02-06 | 2015-10-14 | 株式会社小糸制作所 | 发光模块 |
Also Published As
Publication number | Publication date |
---|---|
US7750362B2 (en) | 2010-07-06 |
US20090242915A1 (en) | 2009-10-01 |
DE202008014378U1 (de) | 2009-02-12 |
CN101546795B (zh) | 2011-02-16 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: GUANGBAO ELECTRIC UANGZHOU) CO., LTD. GUANGBAO SC Free format text: FORMER OWNER: GUANGBAO SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20131108 Owner name: LITE-ON TECHNOLOGY (CHANGZHOU) CO., LTD. Free format text: FORMER OWNER: SILITEK ELECTRONIC (GUANGZHOU) CO., LTD. Effective date: 20131108 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 510663 GUANGZHOU, GUANGDONG PROVINCE TO: 213166 CHANGZHOU, JIANGSU PROVINCE |
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TR01 | Transfer of patent right |
Effective date of registration: 20131108 Address after: 213166 Wujin high tech Industrial Development Zone, Jiangsu Province, Yang Lake Road, No. 88 Patentee after: LITE-ON OPTO TECHNOLOGY (CHANGZHOU) Co.,Ltd. Patentee after: LITE-ON ELECTRONICS (GUANGZHOU) Ltd. Patentee after: Lite-On Technology Co.,Ltd. Address before: 510663 Guangzhou science and Technology Development Zone, Guangzhou City, Guangdong Province Science City West Road, No. 25 Patentee before: Lite-On Electronics (Guangzhou) Limited Patentee before: Lite-On Technology Co.,Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110216 |