CN101546136A - Method for removing optical resist - Google Patents
Method for removing optical resist Download PDFInfo
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- CN101546136A CN101546136A CN200810035092A CN200810035092A CN101546136A CN 101546136 A CN101546136 A CN 101546136A CN 200810035092 A CN200810035092 A CN 200810035092A CN 200810035092 A CN200810035092 A CN 200810035092A CN 101546136 A CN101546136 A CN 101546136A
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Abstract
The invention provides a method for removing optical resist, which is carried out in a reaction cavity of incineration equipment. In the prior art, the temperature of a wafer is between 200 and 300 DEG C, the ratio of oxygen to diluent gas is more than 10 so as to ensure that the removal rate is too large and difficult to control, and damages or defects are easy to be generated on the wafer. The method comprises the following steps: firstly, arranging the wafer on which the optical resist is to be removed in the reaction cavity; secondly, controlling the temperature of the reaction cavity so as to ensure that the temperature of the wafer is stabilized within a preset temperature range, wherein the preset temperature is between 70 and 150 DEG C; thirdly, adjusting and controlling the pressure of the reaction cavity and stabilizing the pressure within a preset pressure range; and finally, introducing the oxygen and the diluent gas into the reaction cavity and turning on a microwave generator for a preset period of time, wherein the matching range of the oxygen and the diluent gas is between 0.1 and 10. The method can reduce the removal rate of the optical resist so as to ensure that the removal of the optical resist is easy to control, and the phenomenon of generating the damages or the defects on the wafer because of excessive optical resist removal can be avoided.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of photoresist removal method.
Background technology
Along with constantly reducing of the minimum feature size of semiconductor devices, the thickness that is coated on the photoresist of crystal column surface in the photoetching process is also constantly reducing.Original thickness just very thin photoresist also can consume certain thickness in etching technics, so it is extremely thin even less than 500 dusts to cause finishing the thickness of the photoresist on the wafer behind the etching technics.Now in reaction cavity of incineration equipment, remove photoresist usually, at first regulate and control the temperature of reaction chamber to guarantee that the temperature on the wafer is 200 to 300 degrees centigrade when removing photoresist, and then the pressure of regulation and control reaction chamber and it is adjusted between 93 to 173 Pascals, in reaction chamber, feed proportioning afterwards again and (can be nitrogen (N greater than oxygen and the diluents of 10:1
2) or diamine (N
2H
2)) and open microwave generator, oxygen forms oxygen plasma under the effect of microwave, and oxygen plasma promptly reacts with photoresist, thereby the photoresist on the wafer is removed.
But, the photoresist of above-mentioned photoresist removal method is removed speed too fast (can reach 20000 dusts/minute), the speed of removing so high photoresist can't satisfy the more and more removal requirement of thin photoresist on the wafer, it can cause the removal of photoresist to become to be difficult to control, and often takes place to remove the thing that excessively causes damage or defective on wafer because of photoresist.
Therefore, how to provide a kind of photoresist removal method to remove speed so that lower photoresist to be provided, thereby the removal that makes photoresist becomes and is easy to control, and can avoid having become the technical matters that industry needs to be resolved hurrily because of the excessive thing that produces damage or defective on wafer of photoresist removal takes place.
Summary of the invention
The object of the present invention is to provide a kind of photoresist removal method, can reduce the removal speed of photoresist by described removal method, thereby the removal that makes photoresist becomes and is easy to control, and the thing that can avoid excessively producing damage or defective because of the photoresist removal on wafer takes place.
The object of the present invention is achieved like this: a kind of photoresist removal method, it carries out in a reaction cavity of incineration equipment, be provided with a microwave generator in this reaction chamber, this method may further comprise the steps: a, the wafer that desire is removed photoresist are arranged in the reaction chamber, have the photoresist of preset thickness on this wafer; B, regulation and control reaction chamber temperature so that the temperature stabilization on the wafer in a preset temperature range; C, regulation and control reaction chamber pressure and it is stabilized in the preset pressure scope; D, in reaction chamber aerating oxygen and diluents and open microwave generator, and continue a preset period of time; Wherein, this preset temperature range is 70 to 150 degrees centigrade, and in steps d, the ratio range of oxygen and diluents is 0.1 to 10.
In above-mentioned photoresist removal method, in step a, this preset thickness is less than 500 dusts.
In above-mentioned photoresist removal method, in step b, this diluents is nitrogen or diamine.
In above-mentioned photoresist removal method, in step c, this preset pressure scope is 93 to 173 Pascals.
In above-mentioned photoresist removal method, in steps d, this preset period of time is 10 seconds to 30 seconds.
The temperature of wafer is 200 to 300 degrees centigrade when removing photoresist in the prior art, oxygen is compared greater than 10 with the proportioning of diluents, in the photoresist removal method of the present invention temperature on the wafer is adjusted into 70 to 150 degrees centigrade, and the proportioning of oxygen and diluents is adjusted in 0.1 to 10 the scope, thereby greatly reduce the removal speed of photoresist, and the removal that makes photoresist becomes and is easy to control, and the thing that can avoid excessively producing damage or defective because of the photoresist removal on wafer takes place.
Description of drawings
Photoresist removal method of the present invention is provided by following embodiment and accompanying drawing.
Fig. 1 is the composition structural representation of incineration equipment;
Fig. 2 is the process flow diagram of photoresist removal method of the present invention.
Embodiment
Below will be described in further detail photoresist removal method of the present invention.
Photoresist removal method of the present invention is carried out in a reaction cavity of incineration equipment, referring to Fig. 1, it has shown the composition structural representation of incineration equipment, as shown in the figure, described incineration equipment has reaction chamber 1, be provided with wafer-supporting platform 10, microwave generator 11, heating module 12 and a plurality of leg 13 in the reaction chamber 1, reaction chamber 1 is provided with draft tube 14 and gas outlet 15.Described heating module 12 is arranged on wafer-supporting platform 10 times and is used to heat the wafer that is arranged on the wafer-supporting platform, described a plurality of leg 13 has rise and falls two states, when leg 13 is in the rise state, it is with the fragmented wafer-supporting platform 10 of wafer, when leg 13 is in when falling state, wafer is set directly on the wafer-supporting platform 10.Reacting gas such as oxygen and diluents enters reaction chamber 1 via admission line 14, and reacted waste gas is discharged by gas outlet 15 in the reaction chamber 1.
Referring to Fig. 2, in conjunction with referring to Fig. 1, photoresist removal method of the present invention is at first carried out step S20, the wafer of desire being removed photoresist is arranged in the reaction chamber, be about on the wafer setting wafer-supporting platform 10 as shown in Figure 1 and will be coated with one of photoresist face up, the photoresist that has preset thickness on the described wafer, described preset thickness is less than 500 dusts.In first, second and the 3rd embodiment of the present invention, the photoresist thickness on the described wafer is respectively 300,400 and 500 dusts.
Then continue step S21, the temperature of regulation and control reaction chamber is so that the temperature stabilization on the wafer in a preset temperature range, is regulated and control the temperature of reaction chamber at this by regulating and control heating module 12, and described preset temperature range is 70 to 150 degrees centigrade.In first, second and the 3rd embodiment of the present invention, the temperature on the described wafer is respectively 70,100 and 150 degrees centigrade.
It should be noted that, in step S21, can be by dual mode with the temperature stabilization of wafer at 70 to 150 degrees centigrade; Method one is that leg 13 is set in the rise state, and the temperature of adjusting heating module 12 again makes the temperature on the wafer be positioned at 70 to 150 degrees centigrade; Mode two is that leg 13 is set in the state of falling, and the temperature of adjusting heating module 12 again makes the temperature on the wafer be positioned at 70 to 150 degrees centigrade; Mode one and mode two times, the temperature range of wafer-supporting platform 10 is respectively 200 to 300 degrees centigrade and 70 to 150 degrees centigrade.
Then continue step S22, regulate and control the pressure of reaction chamber and it is stabilized in the preset pressure scope, described preset pressure scope is 93 to 173 Pascals.In first, second and the 3rd embodiment of the present invention, the pressure of described reaction chamber is 133 Pascals.
Then continue step S23, aerating oxygen and diluents and open microwave generator in reaction chamber, and continue a preset period of time are 0.1 to 10 at the ratio range of this oxygen and diluents, described diluents is nitrogen or diamine, and described preset period of time is 10 seconds to 30 seconds.In first, second and the 3rd embodiment of the present invention, the proportioning of described oxygen and diluents is respectively 0.1,5 and 10, and preset period of time is 20 seconds.
Use electron microscope that the wafer after removing photoresist through first, second and the 3rd embodiment of the present invention is observed, find that the photoresist on the wafer is all removed, and on wafer, and do not find obviously damage or defective.
In sum, in the photoresist removal method of the present invention temperature on the wafer is adjusted into 70 to 150 degrees centigrade, and the proportioning of oxygen and diluents is adjusted in 0.1 to 10 the scope, thereby greatly reduce the removal speed of photoresist, and the removal that makes photoresist becomes and is easy to control, and the thing that can avoid the photoresist removal excessively to produce damage or defective on wafer takes place.
Claims (5)
1, a kind of photoresist removal method, it carries out in a reaction cavity of incineration equipment, be provided with a microwave generator in this reaction chamber, this method may further comprise the steps: a, the wafer that desire is removed photoresist are arranged in the reaction chamber, have the photoresist of preset thickness on this wafer; B, regulation and control reaction chamber temperature so that the temperature stabilization on the wafer in a preset temperature range; C, regulation and control reaction chamber pressure and it is stabilized in the preset pressure scope; D, in reaction chamber aerating oxygen and diluents and open microwave generator, and continue a preset period of time; It is characterized in that this preset temperature range is 70 to 150 degrees centigrade, in steps d, the ratio range of oxygen and diluents is 0.1 to 10.
2, photoresist removal method as claimed in claim 1 is characterized in that, in step a, this preset thickness is less than 500 dusts.
3, photoresist removal method as claimed in claim 1 is characterized in that, in step b, this diluents is nitrogen or diamine.
4, photoresist removal method as claimed in claim 1 is characterized in that, in step c, this preset pressure scope is 93 to 173 Pascals.
5, photoresist removal method as claimed in claim 1 is characterized in that, in steps d, this preset period of time is 10 seconds to 30 seconds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810035092A CN101546136A (en) | 2008-03-25 | 2008-03-25 | Method for removing optical resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810035092A CN101546136A (en) | 2008-03-25 | 2008-03-25 | Method for removing optical resist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101546136A true CN101546136A (en) | 2009-09-30 |
Family
ID=41193331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810035092A Pending CN101546136A (en) | 2008-03-25 | 2008-03-25 | Method for removing optical resist |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101546136A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102193344A (en) * | 2010-03-15 | 2011-09-21 | 中芯国际集成电路制造(上海)有限公司 | Method for removing photoresist in deep n-well process |
| CN102768476A (en) * | 2012-07-26 | 2012-11-07 | 中微半导体设备(上海)有限公司 | Method for removing optical resist |
| CN102135734B (en) * | 2010-01-27 | 2013-09-04 | 中芯国际集成电路制造(上海)有限公司 | Photoresistance removing method |
-
2008
- 2008-03-25 CN CN200810035092A patent/CN101546136A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102135734B (en) * | 2010-01-27 | 2013-09-04 | 中芯国际集成电路制造(上海)有限公司 | Photoresistance removing method |
| CN102193344A (en) * | 2010-03-15 | 2011-09-21 | 中芯国际集成电路制造(上海)有限公司 | Method for removing photoresist in deep n-well process |
| CN102193344B (en) * | 2010-03-15 | 2013-04-10 | 中芯国际集成电路制造(上海)有限公司 | Method for removing photoresist in deep N-well process |
| CN102768476A (en) * | 2012-07-26 | 2012-11-07 | 中微半导体设备(上海)有限公司 | Method for removing optical resist |
| CN102768476B (en) * | 2012-07-26 | 2014-08-20 | 中微半导体设备(上海)有限公司 | Method for removing optical resist |
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Open date: 20090930 |