CN101543660A - Method for preparing neuro chip by taking polylactic acid as substrate - Google Patents
Method for preparing neuro chip by taking polylactic acid as substrate Download PDFInfo
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- CN101543660A CN101543660A CN200910049004A CN200910049004A CN101543660A CN 101543660 A CN101543660 A CN 101543660A CN 200910049004 A CN200910049004 A CN 200910049004A CN 200910049004 A CN200910049004 A CN 200910049004A CN 101543660 A CN101543660 A CN 101543660A
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- polylactic acid
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Abstract
The invention relates to a method for preparing a neuro chip by taking polylactic acid as a substrate in the technical field of biological engineering. The method comprises the following steps: firstly, spin coating of a layer of photoresist on the polylactic acid substrate; secondly, carrying out UV exposure on the photoresist subjected to spin coating; thirdly, placing the exposed device in a developing solution to remove the part of unexposed photoresist; fourthly, etching a round hole on the polylactic acid substrate by a NaOH etching agent; fifthly, sputtering gold in the round hole of the polylactic acid substrate; sixthly, removing the exposed photoresist from the device which is sputtered by the gold, and peeling off the sputtered gold on the photoresist; and seventhly, carrying out chemical mechanical planarization to ensure that the gold and an integrated circuit are well connected with each other. The method adopts the polylactic acid substrate instead of a monocrystalline silicon substrate, not only can realize functions of the prior neuro chip, but also can realize excellent biological compatibility and stable working life, compared with the prior neuro chip.
Description
Technical field
What the present invention relates to is a kind of chip production method of technical field of bioengineering, specifically, relate to be a kind of be the preparation method of the neuro chip of substrate with the polylactic acid.
Background technology
The neuro chip technology is to be proposed on March 27th, 2006 by the scientists of Padova, Italy university, the research helps to develop advanced neural recovery technique, is used for the treatment of nervous disorder or develops organic computer by the neurocyte deal with data of living.Concrete principle is as follows: 16000 electron transistors and hundreds of capacitors have been installed on the silicon chip of 1 mm square, being used in a kind of special protein of finding in the brain then adheres to brain cell on the chip, these protein also connect together the ion channel of neurocyte and semi-conducting material, and the electronic signal of neurocyte just can be sent on the silicon like this.By this protein, electronic unit on the neuro chip and active somatic cell can be got in touch each other, and the electronic signal that neurocyte sends is noted by the transistor of chip, and the capacitor of chip is used to the cell that excites nerve.
Find through retrieval prior art, " Researchers get neurons andsilicon talking " (" researcher makes neuron combine with silicon circuit ") that people such as alfredo di stefano Vaasa Nene delivered in USA Magazine " LifeScience " (" living science ") in 2006 27 days mentioned the neuro chip based on silicon base.Specific as follows: this chip be with monocrystal silicon as substrate, on silicon substrate, etch array of circular apertures then, then in the circular hole that has etched sputter gold as interconnected with integrated circuit.This chip can realize that the brain cell and the silicon integrated circuit of living organically connect together.But weak point is a monocrystalline silicon piece does not have good bio-compatibility, and this will influence the working life of entire chip, thereby can not fine, very stably realize the function of neuro chip.
Summary of the invention
The present invention is directed to existing technical deficiency, providing a kind of is the preparation method of the neuro chip of substrate with the polylactic acid, adopt the polylactic acid based end to replace silicon base, the neuro chip that obtains has good bio-compatibility and stable working life, thereby solves the deficiency in the background technology.
The present invention is achieved by the following technical solutions, the present invention includes following steps:
The first step, spin coating one deck photoresist on the polylactic acid based end;
In second step, the photoresist after the spin coating is carried out the UV exposure;
The 3rd step, after the exposure device is put into developer solution, remove unexposed photoresist part;
In the 4th step, the polylactic acid based end, etched circular hole with the NaOH etching agent;
The 5th step, sputter gold in circular hole of the polylactic acid based end;
The 6th step, the device of the intact gold of sputter is removed the photoresist that exposed, the sputter gold on the photoresist also is stripped from simultaneously;
In the 7th step, chemical-mechanical planarization makes gold and integrated circuit circuit intact interconnected.
The described first step, be specially: with thickness be the polylactic acid based end of 600um as substrate, photoresist SU-8 glue was dripped on the polylactic acid based end, with the even glue 10s of desk-top sol evenning machine low speed (500r/min), (3000r/min) spares glue 30s at a high speed again, obtains the thick SU-8 glue-line of 50um.In temperature is to heat the about 10min of the good photoresist of spin coating under 95 ℃, and heating process is finished (preceding baking) on electric hot plate, be cooled to room temperature.
In described second step, be specially: the micro-fluidic chip according to design makes mask blank with laser photocomposing machine on photographic negative.The mask with circular hole that designs is placed between UV (ultraviolet) light source and the photoresist, the pattern and the polylactic acid based end of mask plate, calibrated, regulating the litho machine light energy is 7Mw/cm2, by photoresist being carried out UV exposure 60s, makes that the figure on the mask is transferred on the photoresist.
In described the 3rd step, be specially: after photoetching is intact, to the polylactic acid based end wash, air-dry or dry, on electric hot plate, continue heating about 25min (after bake) then with 120 ℃.Be cooled to room temperature, the 4min that develops in ethyl cellosolve acetate solution removes unexposed photoresist part.
In described the 4th step, be specially: with ICP-DRIE etching is carried out at the polylactic acid based end then, make its hollow out, form the circular hole of cylindrical shape, the speed of etching is 10um/min, and etch period is 60min.
In described the 5th step, be specially: in circular hole of the polylactic acid based end sputter gold as with the interconnection line of CMOS integrated circuit, wherein also will be on the photoresist by sputter one deck gold;
In described the 6th step, be specially: to be cooled to room temperature, the 5th entire device that obtain of step put into remove the photoresist that expose after acetone soln soaks 24h, also removal is sputtered at the gold on the photoresist at this moment when removing photoresist.Gold on the photoresist normally is difficult to peel off owing to sputter at, and the gold of this residual sputter can be peeled off by this lift-off (peeling off) technology.
In described the 6th step, be specially: the gold of last chemical-mechanical planarization sputter couples together CMOS IC chip and golden interconnection line.
Present neuro chip major part is a silicon base, all can not make the neuronal cell survival that strips down more than tens hours, the present invention adopts the neuro chip of polylactic acid substrate preparation then can prolong neuronal cell life-span that strips down and the growth that forms neuronal cell greatly, thereby provides capital chance for studying the signal of telecommunication to neure growth.On the basis of microelectrode array technology, neuro chip is introduced in the body, make up an IC chip compatible in vivo with biological tissue, become the bonded bridge of living body biological neutral net and integrated circuit technique, and can combine with neural recovery technique, be used to repair the function of biological nervous system disappearance or degeneration, as functions such as vision, audition, muscle controls.Further, also can utilize wireless communication technology, realize the control stream of interior neuro chip of organism and external control circuit, the double-direction radio transmission of data flow, this has positive meaning to treatment of conditions such as nerve injury, function of nervous system's degenerations.
The present invention adopts the polylactic acid based end to replace monocrystal silicon substrate, and the present invention compares with original neuro chip, both can realize the function of original neuro chip, can realize extremely strong bio-compatibility again, can be connected with any biological cell; And stable working life, can reach more than 1 year.
Description of drawings
Fig. 1 is a process flow diagram of the present invention.
Wherein: a is spin coating one deck photoresist on the polylactic acid based end; B is for carrying out the UV exposure to the photoresist after the spin coating; After the c exposure device is put into developer solution, remove unexposed photoresist part; D is for etching circular hole to the polylactic acid based end with the NaOH etching agent; E is the sputter gold; F removes the photoresist that exposed with the device of the intact gold of sputter, and the sputter gold on the photoresist also is stripped from simultaneously; G is a chemical-mechanical planarization, makes that gold and cmos circuit are intact interconnected.
The specific embodiment
Below in conjunction with accompanying drawing embodiments of the invention are done detailed explanation: originally being implemented in the technical solution of the present invention is to implement under the prerequisite, provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As shown in Figure 1, be process chart of the present invention, wherein: a is spin coating one deck photoresist on the polylactic acid based end; B is for carrying out the UV exposure to the photoresist after the spin coating; After the c exposure device is put into developer solution, remove unexposed photoresist part; D is for etching circular hole to the polylactic acid based end with the NaOH etching agent; E is the sputter gold; F removes the photoresist that exposed with the device of the intact gold of sputter, and the sputter gold on the photoresist also is stripped from simultaneously; G is a chemical-mechanical planarization, makes that gold and cmos circuit are intact interconnected.
What present embodiment related to is the preparation method of the neuro chip of substrate with the polylactic acid, comprises the steps:
The first step is 600um with thickness, and the length of side is that the polylactic acid based end of 1cm is as substrate, photoresist SU-8 glue was dripped on the polylactic acid based end, with the even glue 10s of desk-top sol evenning machine low speed (500r/min), (3000r/min) spares glue 30s at a high speed again, obtains the thick SU-8 glue-line of 50um.In temperature is to heat the about 10min of the good photoresist of spin coating under 95 ℃, and heating process is finished (preceding baking) on electric hot plate, be cooled to room temperature.
In second step,, on photographic negative, make mask blank with high-resolution (5080dpi) laser photocomposing machine with CorelDraw 9.0 softwares (general known software) design micro-fluidic chip.The mask with circular hole that designs is placed between UV (ultraviolet) light source and the photoresist, the pattern and the polylactic acid based end of mask plate, calibrated, regulating the litho machine light energy is 7Mw/cm2, by photoresist being carried out UV exposure 60s, makes that the figure on the mask is transferred on the photoresist.
The 3rd step, after photoetching is intact, to the polylactic acid based end wash, air-dry or dry, be placed on then on the electric hot plate and continue heating about 25min (after bake) with 120 ℃.Be cooled to room temperature, the 4min that develops in ethyl cellosolve acetate solution removes unexposed photoresist part.
The 4th step, use ICP-DRIE (inductively coupled plasma deep reaction ion etching) that etching is carried out at the polylactic acid based end then, make its hollow out, form the circular hole of cylindrical shape, the speed of etching is 10um/min, and etch period is 60min, the power supply of radio frequency device is 13.65MHz, 3kW.
The 5th step, in circular hole of the polylactic acid based end sputter gold as with the interconnection line of integrated circuit, wherein also will be on the photoresist by sputter one deck gold, range is in the adjustable extent of 30-70mm, and the frequency of radio-frequency power supply is 13.65MHz, vacuum is 8*10-5Pa, sputtering power is 200W, and sputtering time is 40min, and substrate temperature is 200 ℃, build-up of luminance air pressure is 3.0Pa, and automatic bias is 400V.
The 6th goes on foot, to be cooled to room temperature, goes on foot the 5th and removes the photoresist that exposed after the entire device that obtains is put into acetone soln immersion 24h, also removal is sputtered at the gold on the photoresist this moment when removing photoresist.Gold on the photoresist normally is difficult to peel off owing to sputter at, and the gold of this residual sputter can be peeled off by this lift-off (peeling off) technology.
The 7th step, the golden 10min of last chemical-mechanical planarization sputter, it is better to make that IC chip is connected with golden interconnection line.
As shown in Figure 1, present embodiment obtains is that the neuro chip of substrate comprises photoresist 1, the polylactic acid based end 2, the gold 4 of sputter, mask 3 with the polylactic acid.This neuro chip is implanted in the brain, connect together by the ion channel and the polylactic acid based end of a kind of protein neurocyte, the electronic signal of neurocyte is sent on the neuro chip by the gold in the circular hole like this, and electronic unit on the neuro chip and active somatic cell can be got in touch each other like this.Neuro chip based on the polylactic acid based end can be realized good compatibility with all cells, and its working life can reach more than 1 year considerably beyond the silicon base neuro chip.
Claims (8)
1, a kind of is the preparation method of the neuro chip of substrate with the polylactic acid, it is characterized in that comprising the steps:
The first step, spin coating one deck photoresist on the polylactic acid based end;
In second step, the photoresist after the spin coating is carried out the UV exposure;
The 3rd step, after the exposure device is put into developer solution, remove unexposed photoresist part;
In the 4th step, polylactic acid based end ICP-DRIE is etched circular hole;
The 5th step, sputter gold in circular hole of the polylactic acid based end;
The 6th step, the device of the intact gold of sputter is removed the photoresist that exposed, the sputter gold on the photoresist also is stripped from simultaneously;
In the 7th step, chemical-mechanical planarization makes gold and integrated circuit intact interconnected.
2, according to claim 1 is the preparation method of the neuro chip of substrate with the polylactic acid, it is characterized in that, the described first step is specially: with thickness be the polylactic acid based end of 600um as substrate, photoresist SU-8 glue was dripped on the polylactic acid based end, with the even glue 10s of desk-top sol evenning machine 500r/min, the even glue 30s of 3000r/min obtains the thick SU-8 glue-line of 50um again, is to heat the good photoresist 10min of spin coating under 95 ℃ in temperature, heating process is finished on electric hot plate, is cooled to room temperature.
3, according to claim 1 is the preparation method of the neuro chip of substrate with the polylactic acid, it is characterized in that, described second step, be specially: according to the micro-fluidic chip of design, on photographic negative, make mask blank with laser photocomposing machine, the mask with circular hole that designs is placed between UV light source and the photoresist, the pattern and the polylactic acid based end of mask plate, calibrated, regulating the litho machine light energy is 7Mw/cm2, by photoresist being carried out UV exposure 60s, the figure on the mask is transferred on the photoresist.
4, according to claim 1 is the preparation method of the neuro chip of substrate with the polylactic acid, it is characterized in that, described the 3rd step, be specially: after photoetching is intact, to the polylactic acid based end wash, air-dry or dry, on electric hot plate, continue heating 25min then with 120 ℃, be cooled to room temperature, the 4min that develops in ethyl cellosolve acetate solution removes unexposed photoresist part.
5, according to claim 1 is the preparation method of the neuro chip of substrate with the polylactic acid, it is characterized in that, described the 4th step, be specially: with ICP-DRIE etching is carried out at the polylactic acid based end, hollow out, the circular hole of formation cylindrical shape, the speed of etching is 10um/min, and etch period is 60min.
6, according to claim 1 is the preparation method of the neuro chip of substrate with the polylactic acid, it is characterized in that, in described the 5th step, be specially: in circular hole of the polylactic acid based end sputter gold as with the interconnection line of integrated circuit, wherein on the photoresist also by sputter one deck gold.
7, according to claim 1 is the preparation method of the neuro chip of substrate with the polylactic acid, it is characterized in that, described the 6th step, be specially: to be cooled to room temperature, the 5th entire device that obtain of step put into remove the photoresist that expose after acetone soln soaks 24h, also remove the gold that sputters on the photoresist at this moment when removing photoresist.
8, according to claim 1 is the preparation method of the neuro chip of substrate with the polylactic acid, it is characterized in that, in described the 6th step, is specially: the gold of chemical-mechanical planarization sputter, and with IC chip and golden interconnection line is intact couples together.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910049004A CN101543660A (en) | 2009-04-09 | 2009-04-09 | Method for preparing neuro chip by taking polylactic acid as substrate |
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| CN200910049004A CN101543660A (en) | 2009-04-09 | 2009-04-09 | Method for preparing neuro chip by taking polylactic acid as substrate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102608860A (en) * | 2012-03-26 | 2012-07-25 | 深圳市华星光电技术有限公司 | Photoetching method, photomask combination and exposure system |
| CN103715070A (en) * | 2013-12-30 | 2014-04-09 | 国家电网公司 | Method for adhesive magnetron sputtering thick film |
-
2009
- 2009-04-09 CN CN200910049004A patent/CN101543660A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102608860A (en) * | 2012-03-26 | 2012-07-25 | 深圳市华星光电技术有限公司 | Photoetching method, photomask combination and exposure system |
| CN102608860B (en) * | 2012-03-26 | 2016-02-03 | 深圳市华星光电技术有限公司 | Lithographic methods, reticle combination and exposure system |
| CN103715070A (en) * | 2013-12-30 | 2014-04-09 | 国家电网公司 | Method for adhesive magnetron sputtering thick film |
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Open date: 20090930 |