CN101539891A - Embedded type flash memory, storage system and method for power fail safeguard of data - Google Patents

Embedded type flash memory, storage system and method for power fail safeguard of data Download PDF

Info

Publication number
CN101539891A
CN101539891A CN 200810102061 CN200810102061A CN101539891A CN 101539891 A CN101539891 A CN 101539891A CN 200810102061 CN200810102061 CN 200810102061 CN 200810102061 A CN200810102061 A CN 200810102061A CN 101539891 A CN101539891 A CN 101539891A
Authority
CN
China
Prior art keywords
write
data
data district
byte
district
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN 200810102061
Other languages
Chinese (zh)
Other versions
CN101539891B (en
Inventor
张武杰
李菲菲
磨键琨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RDA Microelectronics (Shanghai) Corp. Ltd.
Original Assignee
POENIX MCROELECTRONIC (CHINA) CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by POENIX MCROELECTRONIC (CHINA) CO Ltd filed Critical POENIX MCROELECTRONIC (CHINA) CO Ltd
Priority to CN 200810102061 priority Critical patent/CN101539891B/en
Publication of CN101539891A publication Critical patent/CN101539891A/en
Application granted granted Critical
Publication of CN101539891B publication Critical patent/CN101539891B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

The invention provides a flash memory, a system and a method for power fail safeguard of data. The embedded type system comprises an embedded type operating system, a file system, a memory and the like; the memory comprises a flash memory of which the storage space comprises a destination data area and a backup data area; and the embedded type storage system further comprises a power fail safeguard module used for executing the process of writing the data in the backup data area first, and then executing the process of writing the data in the destination data area after executing the writing process. The invention also relates to the method for power fail safeguard of data. The flash memory, the system and the method can easily and reliably realize the application of a general file system in a severe embedded type environment and ensure the safety and reliability of the data.

Description

A kind of embedded flash memory, storage system and method for power fail safeguard of data thereof
Technical field
The present invention relates to flash memory (Flash, flash memory), storage system and data managing method thereof, relate in particular to the power-off protection method of file under a kind of universal document system, in order to solve the storage security problem of key message.
Background technology
Nand flash memory is to organize data with the form of a plurality of data blocks (block), includes the page or leaf (page) of fixed number in each data block.But data block is an erase unit minimum in the flash memory, and page or leaf is a read-write cell minimum in the flash memory.Data block in the flash memory erase block (erase block) that is otherwise known as.Flash chip and traditional disk unit have two important differences: at first, sector in the flash memory can only write once, renewal to data in the sector is not directly to cover original sector behind data modification, but write back in the original new sector, and the update mode of disk file system is " upgrading on the spot " (in-place update).In flash memory, the sector that comprises outdated data is invalid sector, and the sector that writes new data is effective sector, and it is free sector that the sector that does not also write data is finished in initialization.Invalid sector has only by the time, and the erase block at this place, sector could write data as free sector after being wiped again once more.Secondly, weigh with erasing times the serviceable life of flash memory, and the life cycle of one of them data block approximately is to wipe 100000 times.In order to guarantee that the data block in the flash memory reaches serviceable life substantially simultaneously, the file system of setting up on flash memory can take some strategies to be evenly distributed in the whole flash memory to guarantee erase operation as far as possible.These two differences have caused different based on flash memory file system and other traditional magnetic disk file system just, therefore can not directly realize universal document system in flash memory.
Two kinds of methods are arranged setting up file system on the flash memory at present: a kind of is directly to set up primary file system on flash chip, allows file system pass through hardware driving and directly manages flash memory.Another kind is that flash memory device is modeled to and block device like the disk sort, thereby uses traditional file system on the block device of simulation.
First method is to set up primary file system on flash memory, allows file system directly manage data on the flash memory by hardware drive program.More common have a Journaling File System (The JournallingFlash File system, JFFS/JFFS2), another kind of flash memory file system (Yet Another FlashFiling System, YAFFS), LFS file manager software (LFS File Manager Software, LFM), etc.They all are the file system that flash memory device is directly managed, the method of its management and log-structured file system US (Log-Structured File system) are closely similar, all adopt the method for log record to manage flash memory device, the problem of having avoided flash memory device " not upgrade on the spot " like this.When writing new data in flash memory, file system is not wiped original data node from flash memory, but generates new data node in the free area of flash memory.Original data node becomes out-of-date with invalid.Owing to kept the historical data of file, so just the legacy data for recovery file provides possibility.Log record has improved the robustness of flash memory file system, is this class file system one big advantage.
Adopt the defective of first method mainly to be: there is compatibility issue in special-purpose file system.
The system architecture of second method is seen Fig. 1, NAND quickflashing transport layer (NAND FlashTranslation Layer wherein, NFTL) be based on the Flash dynamic management layer that dummy block will is shone upon, it has shielded the defective of physics Flash, provides unified, continuous, available storage medium to upper application module.Make the different of imperceptible operation flash memory device of traditional file system and ordinary magnetic disc equipment by this approach, also realized abrasion equilibrium simultaneously, guaranteed the reliable memory of data.MTD (MemoryTechnology Device) memory techniques equipment is to have used a noun in the linux system, and here it has shielded the difference of each Flash chip, provides unified operation-interface to the upper strata, as reading and writing, wipe etc.
Adopt the defective of second method mainly to be: NFTL does not realize the power down protection based on file, in the abominable built-in applied system of environment, if generation systems power down then be catastrophic when upgrading key message.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of embedded flash memory, embedded system and method for power fail safeguard of data thereof, uses the data security problem that universal document system brings to overcome in embedded flash memory equipment.
For solving the problems of the technologies described above, the present invention at first provides a kind of embedded flash memory, the storage space of described flash memory comprises destination data district and Backup Data district, wherein, when file system cache during to described flash memory write-back, carry out the process that described data is write described Backup Data district earlier, after said write is finished, carry out the process that writes described destination data district again.
The present invention also provides a kind of embedded system; comprise embedded OS, file system; and storer; described storer comprises flash memory; it is characterized in that; the storage space of described flash memory comprises destination data district and Backup Data district; described embedded system further comprises the power down protection module; be used for when file system cache during to described flash memory write-back; execution writes described data earlier the process in described Backup Data district; execute after the said write, carry out the process that writes described destination data district again.
The present invention and then a kind of method for power fail safeguard of data of embedded system is provided comprises step:
(A-1) the record first process byte in storer is used to indicate power down protection and begins;
(A-2) collect and the system cache that arranges the document in need the data of write-back, and data are write described Backup Data district;
(A-3) the record second process byte in storer is used for the complete described Backup Data district that writes of unlabeled data;
(A-4) the described data that write the Backup Data district are write described destination data district;
(A-5) record the 3rd process byte in storer is used for the complete described destination data district that writes of unlabeled data.
After system powers on, before the load document system, comprise step:
(B-1) check the process byte that writes down in the storer;
(B-2) if be the second process byte, then the data in the described Backup Data district are read as data source, write described destination data district, and in storer, write down the 3rd process byte.
The present invention has realized the application of universal document system under abominable embedded environment, has guaranteed that data security is reliable.The inventive method realizes simple, has made full use of existing erasable equilibrium of NTFL and bad block management.In addition, owing to before writing the content of buffer memory (Cache) has been carried out simply by block sequencing, therefore use the inventive method not reduce the speed that writes.
Description of drawings
Fig. 1 is the configuration diagram that universal document system is applied to NAND Flash;
Fig. 2 is the system architecture synoptic diagram after the adding power down protection module of the present invention;
Fig. 3 is the principle schematic of power down protection mechanism of the present invention;
Fig. 4 is that the data of the method for power fail safeguard of data realized of the present invention write process flow diagram;
Fig. 5 is the process flow diagram that powers on and recover of the method for power fail safeguard of data realized of the present invention;
Fig. 6 is the dynamic assignment process flow diagram according to the physical block in the described Backup Data of embodiment of the invention district;
Fig. 7 is an application example of the present invention: the system architecture synoptic diagram of smart card with large capacity.
Embodiment
Main thought of the present invention is: by set up the mode in a dynamic data backing-up district between file system cache (Cache) and Flash destination data district; realized power down protection, made universal document system can be used for the abominable embedded Flash storer of environment more reliably based on file system.
Thus, according to the embodiment of the invention, the storage space of flash memory comprises destination data district and Backup Data district, wherein, when file system cache during to described flash memory write-back, carry out the process that described data is write described Backup Data district earlier, after said write is complete, carry out the process that writes described destination data district again.
In storage system, further comprise the zone that is used to deposit the process byte, described proword feast-brand mark has shown the write phase of described data writing process.This process byte can leave in the flash memory identical with the Backup Data district with described destination data district, in NAND Flash, alternatively, this process byte also can leave in other storer of storage system, as NOR Flash, EEPROM etc., promptly be different from the storer at described destination data district and Backup Data place.
Wherein, this Backup Data district comprises data field and overhead area, and described overhead area comprises that data write the logical block number (LBN) and page or leaf skew in described destination data district.
For process byte of each stage record, indicate ablation process and enter corresponding write phase in ablation process, the realization system is recovered from unexpected power down.These process bytes can be pre-defined, is defined as process byte 1,2 and 3 as introducing below, and expression indicates the stage that power down protection begins respectively; Ablation process has been finished the work that writes in Backup Data district, may enter the work that writes the destination data district, and write partial data, also may just finish the work that writes the Backup Data district, does not also begin to write the stage of working in destination data district; With the stage that ablation process has been finished the operation that writes the destination data district, this three phases also is above-mentioned write phase.
As shown in Figure 2; be embedded system structure synoptic diagram according to the described adding power down protection of embodiments of the invention module; this embedded system comprises the embedded OS file system; NFTL; MTD and the parts such as storer that comprise flash memory etc.; compare with the described system architecture of Fig. 1; difference is: the storage space of described flash memory comprises destination data district and Backup Data district; described embedded system further comprises the power down protection module; be used for when file system cache during to this flash memory write-back; execution writes described data earlier the process in described Backup Data district; execute after this ablation process, carry out the process that data is write again described destination data district again.
Described power down protection module is further used for: according to current write phase, record indicates the process byte of current write phase in flash memory.Thereby when powering on, from unexpected power down, recover according to this process byte realization system.
After system powers on, after the NFTL loading is finished, not directly to load universal document system, but move the power loss recovery module earlier, reload universal document system.The power down protection module is judged current write phase according to the process byte, does not write the destination data district as yet if described data have write the Backup Data district, and the data taking-up that then will write the Backup Data district writes the destination data district as data source.
The Backup Data district is not the static reserved block of dividing on Flash, but realize by the logical blocks outside the Installed System Memory space; And the Backup Data district is the physical block of the described storer of dynamic assignment, can guarantee not destroy the erasable equilibrium that is realized by NFTL like this, can utilize the bad block management of being realized by NFTL simultaneously again, has simplified use.The storage space of flash memory comprises destination data district and Backup Data district in this embedded system, as described above, this Backup Data district comprises data field and overhead area, and described overhead area comprises that data write the logical block number (LBN) and page or leaf skew in described destination data district.And the record of described process byte can be recorded on the storer identical with the Backup Data district with described destination data district or on the storer different with the Backup Data district with described destination data district also with above-mentioned described.
Power down protection module of the present invention just acts on the ablation process of file system; with existing directly to call NFTL different the mode that data write the destination data district; need write the Backup Data district of dynamic assignment to data earlier after adding this module, call NFTL afterwards again data are write the destination data district.Add reading original file system after this module without any influence.
Fig. 3 is the principle schematic of power down protection mechanism of the present invention.As can be seen from Figure, data writing process of the present invention comprises three parts:
Step 301: the data to the flash memory write-back among the Cache are write the Backup Data district;
Step 302: the data to the flash memory write-back among the Cache are write the destination data district;
Step 303: this step is the operation that may take place, if power down occurs in above-mentioned steps 302, the back that powers on so more just needs to carry out this step, reads out and writes the destination data district being stored in data in the Backup Data district.
And before carrying out each step operation; the power down protection module writes the process byte of this process of carrying out earlier, and the record of process byte is recorded on the storer identical with the Backup Data district with described destination data district or on the storer different with the Backup Data district with described destination data district.With 0x55,0x5a, 0xa5 are that example is carried out following analysis.
As shown in Figure 4, the data of the power-down data protection method that realizes for the present invention write process flow diagram.This method may further comprise the steps as seen from the figure:
Step 401: in storer (as in flash memory NAND Flash or in other storer as NOR Flash, EEPROM) ablation process byte 1 is as 0x55, indicate power down protection and begin.
Step 402: collect and the Cache of system that arranges the document in need the data of write-back.The main upper strata of realizing writes the piece arrangement of sector by Flash, utilizes the characteristic of NFTL better, accelerates the writing speed of Flash.
Step 403: the data that step 402 is put in order write the Backup Data district.
Step 404: in storer ablation process byte 2 as 0x5a, the complete Backup Data district that writes of unlabeled data.
Step 405: the data that step 402 is put in order write the destination data district.
Step 406: in storer ablation process byte 3 as 0xa5, the complete destination data district that writes of unlabeled data.
Step 407: ablation process finishes.
Wherein, data write the Backup Data district and comprise step in the step 403: the current data field that writes page or leaf that the data of write-back is write the physical block in Backup Data district, the logical block number (LBN) in the destination data district that will write data and page or leaf skew are write the current overhead area that writes page or leaf of the physical block in Backup Data district, and page or leaf skew added 1, in order to write next time.
Nand Flash is divided into data field and overhead area two parts to storage space, is example with 2GBNand, and its page or leaf is made up of the overhead area of 2048 byte data districts and 64 bytes.Overhead area is normally used for ECC (error correcting code), loss equalization (wear leveling) and other software overhead function, and it has also comprised the key message of the reconstructed mapped table that powers on usually when using NFTL.
After system powered on, before the load document system, the power-down data protection method also comprised step:
(B-1) check the process byte that writes down in the storer;
(B-2) if be the second process byte, then the data in the described Backup Data district are read as data source, write described destination data district, and in storer, write down the 3rd process byte.Recovering process flow diagram by powering on of the described method for power fail safeguard of data of following Fig. 5 is described: Fig. 5 is the recovery process flow diagram that powers on of the method for power fail safeguard of data realized of the present invention.May further comprise the steps as seen from the figure:
Step 501: check the process byte (will introduce below in Fig. 7 smart card with large capacity system and describe in detail) that the power down protection module writes down in storer.According to three kinds of different situations of process byte, do different processing respectively.
If the process byte is that process byte 1 is as 0x55; illustrate that ablation process has entered power down protection; the write section divided data is in the Backup Data district; also may just enter power down protection; at this moment; the destination data district does not also write new data, and does not preserve complete new data as yet in the Backup Data district yet, then changes step 504 over to and carries out.
If the process byte is that process byte 2 is as 0x5a, illustrate that then ablation process finished the work that writes in Backup Data district, may enter the work that writes the destination data district, and write partial data, also may just finish the work that writes the Backup Data district, also not begin to write the work in destination data district.At this moment the Backup Data district has finished writing of new data, has promptly stored complete new data in the storage system, then changes step 502 over to and carries out.
If the process byte be process byte 3 as 0xa5, illustrate that then ablation process finished the operation that writes the destination data district, then change step 504 over to and carry out.
Step 502: read the data content in Backup Data district, write the destination data district.
Step 503: ablation process byte 3 is as 0xa5, and unlabeled data has write the destination data district.
Step 504: power loss recovery is finished dealing with, and withdraws from.
Wherein, the Backup Data district realizes that by the logical block outside the Installed System Memory space Backup Data district is the physical block of the storer of dynamic assignment, introduces the process of Backup Data district dynamic allocation memory physical block below to.As shown in Figure 6, be the process flow diagram of dynamic assignment of the physical block in Backup Data of the present invention district.May further comprise the steps:
Step 601: the logical block of search Flash is to the mapping table of physical block mapping relations, and whether existing corresponding physical block is corresponding with it to check the backup logical block.If having correspondence then to change step 602 over to carries out; If no correspondence then changes step 604 over to and carries out.
Mapping table is that NFTL is peculiar, it be in internal memory, set up one the current Flash of storage logical block to the table of physical block mapping relations, can find the pairing physical block of a certain logical block by it, promptly obtain the physical location of this logical block on Flash.Its expression formula can be expressed as:
Physical block number=mapping table [logical block number (LBN)]
Step 602: judge that the current page or leaf that writes of described physical block is offset whether (SectorCurrent) is 0.If 0, then illustrate this be last time the Cache write-back finish, or just powered on and write for the first time, change step 603 over to and carry out; If not 0, illustrate that then this is a sector in this Cache write-back, then finish.
Step 603: wipe described physical block.
Step 604: in free block list, distribute a physical block corresponding, finish with the backup logical block.
Referring to shown in Figure 7, be an application example of the present invention, the system architecture synoptic diagram of smart card with large capacity.As can be seen from the figure this system has comprised NAND Flash, stored program NOR Flash, ARM microprocessor, quickflashing controller (NFC) and some other module of storage data.
This system has comprised embedded OS, universal document system, and software modules such as NFTL, MTD, because of there being NOR Flash in the system, NOR Flash can read and write by byte, and simple to operate, can be as the process bytes of memory in the inventive method.
Below be the concrete operation method of process byte in this smart card with large capacity system:
1. the definition of each process byte
Process byte 1:0x55
Process byte 2:0xAA
Process byte 3:0x5A
Error detection byte: 0xA5
2. the wiring method of process byte, also i.e. recording process byte in described storer:
Writing of each process byte comprises five parts:
A. the process byte clear 0 that the last time is write;
B. judge that whether storing process bytes of memory address is the end in storing process bytes of memory district, if then wipe this memory block, begins to write from start address; Then continue if not to write.
C. write the proword joint of current write phase itself;
After the recording process byte, also to carry out D. and write the error detection byte.
E. if step C, D write and make mistakes, then storing process bytes of memory address adds 2, carries out from step B again.If step C, D correctly then finish.
Execution in step A mainly is in order to prevent that the effective procedure byte that the last time writes from exerting an influence to this operation.
3. the detection method of process byte, check that the step of the process byte that writes down in the storer comprises:
Step (1) begins to read one by one forward the process byte from the end in storing process bytes of memory district;
Step (2) judges whether to find error detection byte 0xA5, if find the error detection byte, then changes step (3) over to, if do not find the error detection byte up to the reference position in storing process bytes of memory district, then changes step (4) over to;
Step (3) judges whether the previous byte of described error detection byte is the process byte, if, then return described process byte, finish, if not, then continue to search next error detection byte 0xA5 forward, forward step (2) to;
Step (4), return course byte 3 finishes.
The present invention can guarantee not destroy the erasable equilibrium that is realized by NFTL, can utilize the bad block management of being realized by NFTL simultaneously again, simplifies and uses.Realized power down protection, made universal document system can be used for the abominable in-line memory of environment more reliably based on file system.
It should be noted last that, above embodiment is only unrestricted in order to the technical scheme of the explanation embodiment of the invention, although the embodiment of the invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement the technical scheme of the embodiment of the invention, and not break away from the spirit and scope of embodiment of the invention technical scheme and claim.

Claims (18)

1. flash memory, it is characterized in that, the storage space of described flash memory comprises destination data district and Backup Data district, wherein, when file system cache during to described flash memory write-back, carry out the process that described data is write described Backup Data district earlier, after said write is finished, carry out the process that writes described destination data district again.
2. storer as claimed in claim 1 is characterized in that, described Backup Data district realizes by the logical blocks outside the Installed System Memory space.
3. storer as claimed in claim 1 is characterized in that, described Backup Data district is the described storer physical block of dynamic assignment.
4. storer as claimed in claim 1 is characterized in that, described Backup Data district comprises data field and overhead area, and described overhead area comprises that data write the logical block number (LBN) and page or leaf skew in described destination data district.
5. storer as claimed in claim 1 is characterized in that the storage space of described flash memory further comprises the zone that is used to deposit the process byte, and described proword feast-brand mark has shown the write phase of described data writing process.
6. embedded system; comprise embedded OS, file system; and storer; described storer comprises flash memory; it is characterized in that; the storage space of described flash memory comprises destination data district and Backup Data district; described embedded system further comprises the power down protection module; be used for when file system cache during to described flash memory write-back; execution writes described data earlier the process in described Backup Data district; execute after the said write, carry out the process that writes described destination data district again.
7. system as claimed in claim 6 is characterized in that, described power down protection module is further used for: according to current write phase, record indicates the process byte of the write phase of ablation process in described storer.
8. system as claimed in claim 7; it is characterized in that; described power down protection module is further used for: after system powers on; before the load document system; judge current write phase according to the process byte; do not write the destination data district as yet if described data have write the Backup Data district, the data taking-up that then will write the Backup Data district writes the destination data district as data source.
9. system as claimed in claim 6 is characterized in that, described Backup Data district realizes by the logical blocks outside the Installed System Memory space.
10. system as claimed in claim 6 is characterized in that, described Backup Data district is the described flash memory physical block of dynamic assignment.
11. system as claimed in claim 6 is characterized in that, described Backup Data district comprises data field and overhead area, and described overhead area comprises that data write the logical block number (LBN) and page or leaf skew in described destination data district.
12. system as claimed in claim 7 is characterized in that, described process byte is recorded on the storer identical with the Backup Data district with described destination data district or on the storer different with the Backup Data district with described destination data district.
13. the method for power fail safeguard of data of an embedded system according to claim 7 is characterized in that, when file system cache during to described flash memory write-back, comprises step:
(A-1) the record first process byte in storer is used to indicate power down protection and begins;
(A-2) collect and the system cache that arranges the document in need the data of write-back, and data are write described Backup Data district;
(A-3) the record second process byte in storer is used for the complete described Backup Data district that writes of unlabeled data;
(A-4) the described data that write the Backup Data district are write described destination data district;
(A-5) record the 3rd process byte in storer is used for the complete described destination data district that writes of unlabeled data; And
After system powers on, before the load document system, comprise step:
(B-1) check the process byte that writes down in the storer;
(B-2) if be the second process byte, then the data in the described Backup Data district are read as data source, write described destination data district, and in storer, write down the 3rd process byte.
14. method as claimed in claim 13 is characterized in that,
Data write described Backup Data district and comprise step in the step (A-2): the data of write-back are write the current data field that writes page or leaf of the physical block in described Backup Data district, the overhead area that physical block current that the logical block number (LBN) in the destination data district that write data and page or leaf skew is write described Backup Data district writes page;
Further comprise in the step (B-2): the current page overhead area that writes according to the physical block in described Backup Data district is stored described logical block number (LBN) and page or leaf skew.
15. method as claimed in claim 13 is characterized in that, describedly also will write down the error detection byte after the recording process byte in storer, described in storer the step of recording process byte and error detection byte, comprising:
(1) the process byte clear 0 that the last time is write;
(2) judge that whether storing process bytes of memory address is the end in storing process bytes of memory district, if then wipe described memory block, begins to write from start address; If not, then continue to write;
(3) write the process byte of current write phase;
(4) write the error detection byte.
16. method as claimed in claim 15 is characterized in that, further comprises step:
(5) write and make mistakes as if step (3), (4), then storing process bytes of memory address adds 2, carries out from step (2) again.
17., it is characterized in that also comprising that the step that the described process byte that writes down in the described storer is checked comprises as claim 15 or 16 described methods:
(1) end from storing process bytes of memory district begins to read one by one forward the process byte;
(2) judge whether to find the error detection byte,, then change step (3) over to,, then change step (4) over to if do not find the error detection byte up to the reference position in storing process bytes of memory district if find the error detection byte;
(3) whether the previous byte of judging described error detection byte is the process byte, if, then return described process byte, finish, if not, then continue to search next error detection byte forward, forward step (2) to;
(4) return the 3rd process byte, finish.
18. as claim 13 or 14 described methods, it is characterized in that adopting dynamic allocation method that described Backup Data district is distributed the storer physical block, comprise step:
(1) logical block of search flash memory checks to the mapping table of physical block mapping relations whether the backup logical block has had corresponding physical block, if having, then changes step (2) over to and carries out; If do not have, then change step (4) over to and carry out;
(2) judge whether current to write page or leaf skew be 0 to described corresponding physical block, if 0, then change step (3) over to and carry out; If not 0, then finish;
(3) wipe described corresponding physical block;
(4) in free block list, distribute a physical block corresponding, finish with described backup logical block.
CN 200810102061 2008-03-17 2008-03-17 Embedded type flash memory, storage system and method for power fail safeguard of data Active CN101539891B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200810102061 CN101539891B (en) 2008-03-17 2008-03-17 Embedded type flash memory, storage system and method for power fail safeguard of data

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200810102061 CN101539891B (en) 2008-03-17 2008-03-17 Embedded type flash memory, storage system and method for power fail safeguard of data

Publications (2)

Publication Number Publication Date
CN101539891A true CN101539891A (en) 2009-09-23
CN101539891B CN101539891B (en) 2012-12-05

Family

ID=41123087

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200810102061 Active CN101539891B (en) 2008-03-17 2008-03-17 Embedded type flash memory, storage system and method for power fail safeguard of data

Country Status (1)

Country Link
CN (1) CN101539891B (en)

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101788960A (en) * 2010-03-12 2010-07-28 浪潮电子信息产业股份有限公司 Method for protecting store buffer data
CN102395956A (en) * 2011-07-07 2012-03-28 华为技术有限公司 Processing method and device for system commands during memory backup procedure
CN102508724A (en) * 2011-10-25 2012-06-20 北京同有飞骥科技股份有限公司 Disk bad block processing method based on soft RAID (redundant array of independent disks)
CN102508723A (en) * 2011-09-28 2012-06-20 山东神思电子技术股份有限公司 Power-failure protection method orientated to IC (Integrated Circuit) card
WO2013080083A1 (en) * 2011-12-02 2013-06-06 International Business Machines Corporation Coordinating write sequences in a data storage system
CN103176920A (en) * 2013-03-26 2013-06-26 杭州华三通信技术有限公司 Nor flash power down protection method and Nor flash power down protection device
CN103186436A (en) * 2013-03-28 2013-07-03 深圳市显控自动化技术有限公司 Power-down protection method and device of android system
CN103823769A (en) * 2012-11-19 2014-05-28 纬创资通股份有限公司 Computer system and data recovery method
CN104133740A (en) * 2014-07-28 2014-11-05 浪潮软件集团有限公司 Method for recovering abnormal power failure data
CN104537075A (en) * 2014-12-30 2015-04-22 宁波三星电气股份有限公司 Method for applying Yaffs file system to NorFlash
CN104810055A (en) * 2015-05-08 2015-07-29 京东方科技集团股份有限公司 Read-write control circuit and method for Flash chip and AMOLED (Active Matrix/Organic Light Emitting Diode) application circuit
CN105260270A (en) * 2015-11-11 2016-01-20 恒宝股份有限公司 Flash storage space dynamic recovery method and device
CN105589767A (en) * 2015-12-21 2016-05-18 北京时代民芯科技有限公司 System power failure protection realizing method for NAND FLASH
CN105843711A (en) * 2016-06-21 2016-08-10 北京飞杰信息技术有限公司 Data powder-failure protection method and system
CN103914407B (en) * 2012-12-30 2016-09-14 航天信息股份有限公司 A kind of SD card power down protection, restoration methods and the SD card with power down protection
CN106227680A (en) * 2016-07-26 2016-12-14 成都三零嘉微电子有限公司 A kind of data process and power fail preventing data guard method
CN106775684A (en) * 2016-12-02 2017-05-31 北京航空航天大学 A kind of disk buffering power loss recovery method based on new nonvolatile memory
CN107025073A (en) * 2017-04-19 2017-08-08 济南浪潮高新科技投资发展有限公司 A kind of NAND FLASH arrays Mapping information storage means
CN107273309A (en) * 2017-05-19 2017-10-20 瑞斯康微电子(深圳)有限公司 A kind of serial flash data guard method and device
CN107451073A (en) * 2016-05-30 2017-12-08 慧荣科技股份有限公司 Data storage method and system initialization method after power interruption event
CN107797946A (en) * 2016-09-06 2018-03-13 中车株洲电力机车研究所有限公司 A kind of onboard storage
CN107870926A (en) * 2016-09-26 2018-04-03 北京信威通信技术股份有限公司 A kind of method and device of real-time storage
CN109857383A (en) * 2017-11-30 2019-06-07 浙江双峰电气有限公司 A kind of efficient information memory mechanism that power down secure resources are compact
CN110389853A (en) * 2019-06-26 2019-10-29 威胜信息技术股份有限公司 A kind of protection and restoration methods of embedded file system
CN111198775A (en) * 2019-12-19 2020-05-26 潍柴动力股份有限公司 Method and system for correcting abnormal EEPROM storage state and motor vehicle
CN114242125A (en) * 2021-11-15 2022-03-25 珠海妙存科技有限公司 NAND FLASH data power failure protection method, device and medium
CN115983306A (en) * 2022-12-09 2023-04-18 江苏稻源科技集团有限公司 RFID (radio frequency identification) card writing method with error correction capability

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100877030B1 (en) * 2001-07-25 2009-01-07 소니 가부시끼 가이샤 Non-volatile memory and non-volatile memory data rewriting method
CN1928833A (en) * 2005-09-09 2007-03-14 吉佳科技股份有限公司 Method for applying real time backup of single hardware data
CN100555246C (en) * 2007-09-24 2009-10-28 中兴通讯股份有限公司 A kind of on flash memory the system and method for access data

Cited By (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101788960A (en) * 2010-03-12 2010-07-28 浪潮电子信息产业股份有限公司 Method for protecting store buffer data
US9513838B2 (en) 2011-07-07 2016-12-06 Huawei Technologies Co., Ltd. Method and apparatus for processing system command during memory backup
CN102395956A (en) * 2011-07-07 2012-03-28 华为技术有限公司 Processing method and device for system commands during memory backup procedure
CN102395956B (en) * 2011-07-07 2013-10-02 华为技术有限公司 Processing method and device for system commands during memory backup procedure
CN102508723A (en) * 2011-09-28 2012-06-20 山东神思电子技术股份有限公司 Power-failure protection method orientated to IC (Integrated Circuit) card
CN102508724A (en) * 2011-10-25 2012-06-20 北京同有飞骥科技股份有限公司 Disk bad block processing method based on soft RAID (redundant array of independent disks)
CN102508724B (en) * 2011-10-25 2013-12-18 北京同有飞骥科技股份有限公司 Disk bad block processing method based on soft RAID (redundant array of independent disks)
WO2013080083A1 (en) * 2011-12-02 2013-06-06 International Business Machines Corporation Coordinating write sequences in a data storage system
GB2511021B (en) * 2011-12-02 2015-05-06 Ibm Coordinating write sequences in a data storage system
CN103959262A (en) * 2011-12-02 2014-07-30 国际商业机器公司 Coordinating write sequences in a data storage system
GB2511021A (en) * 2011-12-02 2014-08-20 Ibm Coordinating write sequences in a data storage system
US8849939B2 (en) 2011-12-02 2014-09-30 International Business Machines Corporation Coordinating write sequences in a data storage system
CN103959262B (en) * 2011-12-02 2016-08-17 国际商业机器公司 The method and system of the write sequence in coordination data storage system
US8935354B2 (en) 2011-12-02 2015-01-13 International Business Machines Corporation Coordinating write sequences in a data storage system
CN103823769A (en) * 2012-11-19 2014-05-28 纬创资通股份有限公司 Computer system and data recovery method
CN103914407B (en) * 2012-12-30 2016-09-14 航天信息股份有限公司 A kind of SD card power down protection, restoration methods and the SD card with power down protection
CN103176920A (en) * 2013-03-26 2013-06-26 杭州华三通信技术有限公司 Nor flash power down protection method and Nor flash power down protection device
CN103186436B (en) * 2013-03-28 2016-01-06 深圳市显控自动化技术有限公司 A kind of Android system power-off protection method and device
CN103186436A (en) * 2013-03-28 2013-07-03 深圳市显控自动化技术有限公司 Power-down protection method and device of android system
CN104133740A (en) * 2014-07-28 2014-11-05 浪潮软件集团有限公司 Method for recovering abnormal power failure data
CN104537075A (en) * 2014-12-30 2015-04-22 宁波三星电气股份有限公司 Method for applying Yaffs file system to NorFlash
CN104537075B (en) * 2014-12-30 2017-11-28 宁波三星医疗电气股份有限公司 Application process of the Yaffs file system in NorFlash
US10262741B2 (en) 2015-05-08 2019-04-16 Boe Technology Group Co., Ltd. Read and write control circuit and method of flash chip, and AMOLED application circuit
CN104810055A (en) * 2015-05-08 2015-07-29 京东方科技集团股份有限公司 Read-write control circuit and method for Flash chip and AMOLED (Active Matrix/Organic Light Emitting Diode) application circuit
WO2016180093A1 (en) * 2015-05-08 2016-11-17 京东方科技集团股份有限公司 Read/write control circuit and method for flash chip, and amoled application circuit
CN104810055B (en) * 2015-05-08 2018-09-07 京东方科技集团股份有限公司 Flash chip read-write control circuit and method, AMOLED application circuits
CN105260270A (en) * 2015-11-11 2016-01-20 恒宝股份有限公司 Flash storage space dynamic recovery method and device
CN105260270B (en) * 2015-11-11 2018-12-11 恒宝股份有限公司 A kind of Dynamic- Recovery method and device of Flash memory space
CN105589767A (en) * 2015-12-21 2016-05-18 北京时代民芯科技有限公司 System power failure protection realizing method for NAND FLASH
CN105589767B (en) * 2015-12-21 2018-07-31 北京时代民芯科技有限公司 A kind of system power failure for NAND FLASH protects implementation method
US10817188B2 (en) 2016-05-30 2020-10-27 Silicon Motion, Inc. Data storing method and system initializing method after sudden power-off event
CN107451073B (en) * 2016-05-30 2021-01-08 慧荣科技股份有限公司 Data storage method and system initialization method after power interruption event
CN107451073A (en) * 2016-05-30 2017-12-08 慧荣科技股份有限公司 Data storage method and system initialization method after power interruption event
CN105843711A (en) * 2016-06-21 2016-08-10 北京飞杰信息技术有限公司 Data powder-failure protection method and system
CN106227680B (en) * 2016-07-26 2019-01-04 成都三零嘉微电子有限公司 A kind of data processing and power fail preventing data guard method
CN106227680A (en) * 2016-07-26 2016-12-14 成都三零嘉微电子有限公司 A kind of data process and power fail preventing data guard method
CN107797946A (en) * 2016-09-06 2018-03-13 中车株洲电力机车研究所有限公司 A kind of onboard storage
CN107797946B (en) * 2016-09-06 2021-06-29 中车株洲电力机车研究所有限公司 Vehicle-mounted storage device
CN107870926A (en) * 2016-09-26 2018-04-03 北京信威通信技术股份有限公司 A kind of method and device of real-time storage
CN106775684A (en) * 2016-12-02 2017-05-31 北京航空航天大学 A kind of disk buffering power loss recovery method based on new nonvolatile memory
CN107025073B (en) * 2017-04-19 2019-12-10 浪潮集团有限公司 NAND FLASH array Mapping information storage method
CN107025073A (en) * 2017-04-19 2017-08-08 济南浪潮高新科技投资发展有限公司 A kind of NAND FLASH arrays Mapping information storage means
CN107273309A (en) * 2017-05-19 2017-10-20 瑞斯康微电子(深圳)有限公司 A kind of serial flash data guard method and device
CN109857383A (en) * 2017-11-30 2019-06-07 浙江双峰电气有限公司 A kind of efficient information memory mechanism that power down secure resources are compact
CN110389853A (en) * 2019-06-26 2019-10-29 威胜信息技术股份有限公司 A kind of protection and restoration methods of embedded file system
CN110389853B (en) * 2019-06-26 2024-01-02 威胜信息技术股份有限公司 Protection and recovery method for embedded file system
CN111198775A (en) * 2019-12-19 2020-05-26 潍柴动力股份有限公司 Method and system for correcting abnormal EEPROM storage state and motor vehicle
CN111198775B (en) * 2019-12-19 2023-07-18 潍柴动力股份有限公司 Method and system for correcting EEPROM storage state abnormality and motor vehicle
CN114242125A (en) * 2021-11-15 2022-03-25 珠海妙存科技有限公司 NAND FLASH data power failure protection method, device and medium
CN115983306A (en) * 2022-12-09 2023-04-18 江苏稻源科技集团有限公司 RFID (radio frequency identification) card writing method with error correction capability
CN115983306B (en) * 2022-12-09 2023-09-15 江苏稻源科技集团有限公司 RFID card writing method with error correction capability

Also Published As

Publication number Publication date
CN101539891B (en) 2012-12-05

Similar Documents

Publication Publication Date Title
CN101539891B (en) Embedded type flash memory, storage system and method for power fail safeguard of data
CN103577121B (en) A kind of highly reliable linear file access method based on Nand Flash
US8762661B2 (en) System and method of managing metadata
US8028120B2 (en) System with flash memory device and data recovery method thereof
JP5317690B2 (en) Memory system
JP4933269B2 (en) Non-volatile memory and method with memory plane array
US8122193B2 (en) Storage device and user device including the same
TWI546818B (en) Green nand device (gnd) driver with dram data persistence for enhanced flash endurance and performance
JP5376983B2 (en) Memory system
US9311006B2 (en) Table journaling in flash storage devices
JP5198245B2 (en) Memory system
KR101215864B1 (en) Flash memory management method that is resistant to data corruption by power loss
KR101303524B1 (en) Metadata redundancy schemes for non-volatile memories
KR20230003556A (en) Handling asynchronous power loss in sequentially programming memory subsystems
CN103270500B (en) Transaction journal recovers
US20120254636A1 (en) Control apparatus and control method
CN100533408C (en) Flashmemory safety read-write method
CN100449549C (en) Method for building file systems on NAND flash memory in embedded system
CN103577574A (en) High-reliability linear file system based on nand flash
CN102981969A (en) Method for deleting repeated data and solid hard disc thereof
TW201303584A (en) Memory storage device, memory controller thereof, and method for identifying valid data
CN102789813B (en) Method and device for controlling use of non-least significant bit page in storage device
JP2007519996A (en) Nonvolatile memory and method with phased program fault handling
JP2007519996A6 (en) Nonvolatile memory and method with phased program fault handling
JP3822171B2 (en) Nonvolatile semiconductor memory device and control method thereof, nonvolatile semiconductor memory device system and control method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
ASS Succession or assignment of patent right

Owner name: RDA MICROELECTRONICS (SHANGHAI) CO., LTD.

Free format text: FORMER OWNER: PHOENIX MICROELECTRONICS (CHINA) CO., LTD.

Effective date: 20100423

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: 100084 18/F, TOWER A, SCIENCE BUILDING, QINGHUA SCIENCE PARK, ZHONGGUANCUN EAST ROAD, HAIDIAN DISTRICT, BEIJING CITY TO: 201203 ROOM 302, BUILDING 2, NO.690, BIBO ROAD, ZHANGJIANG HIGH-TECH PARK, SHANGHAI CITY

TA01 Transfer of patent application right

Effective date of registration: 20100423

Address after: 201203, room 2, building 690, No. 302 blue wave road, Zhangjiang hi tech park, Shanghai

Applicant after: RDA Microelectronics (Shanghai) Corp. Ltd.

Address before: 100084, Beijing Road, Zhongguancun, Haidian District science and Technology Park, Tsinghua Science and technology building, block A, 18

Applicant before: Poenix Mcroelectronic (China) Co., Ltd.

C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant