CN101539505B - Method for applying continuously adjustable uniaxial stress to semiconductor samples at low temperature - Google Patents
Method for applying continuously adjustable uniaxial stress to semiconductor samples at low temperature Download PDFInfo
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- CN101539505B CN101539505B CN2008101022036A CN200810102203A CN101539505B CN 101539505 B CN101539505 B CN 101539505B CN 2008101022036 A CN2008101022036 A CN 2008101022036A CN 200810102203 A CN200810102203 A CN 200810102203A CN 101539505 B CN101539505 B CN 101539505B
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Abstract
The invention provides a method for applying continuously adjustable uniaxial stress to semiconductor samples at a low temperature. The method comprises the following steps: choosing a piezoelectric ceramic actuator which can regulate applied stress by changing the bias voltage of piezoelectric ceramics; fixing two U-shaped red-copper blocks used at two ends of the piezoelectric ceramic actuator to fix samples and conduct heat; connecting a red-copper heat-conducting wire with one red-copper block to conduct heat uniformly and rapidly; using super glue to bond two ends of a semiconductor sample to the two U-shaped copper blocks; and changing the bias voltage of the piezoelectric ceramics on the piezoelectric ceramic actuator so as to apply continuously adjustable uniaxial stress to the semiconductor sample. The method has the advantages that the magnitude of uniaxial stress is continuously adjustable in double directions and can be measured; the sample is rapid and accurate in temperature reduction; and a device is small in occupied volume and easy to operate and can be perfectly combined with a low-temperature device.
Description
Technical field
The present invention relates to the semiconductor wafer field of measuring technique.Particularly apply the apparatus and method of continuously adjustable uniaxial stress at low temperatures for semiconductor samples.
Background technology
Semi-conductive internal stress has material impact to the character of corresponding devices and structure.A large amount of growths and processing technology all concentrate on the stress of how eliminating or controlling substrate interior.Stress can be to the optics of semiconductor material, electricity, and magnetics, and a series of other character cause tremendous influence.In semiconductor detection technique field, only can could do accurate mensuration to the relevant nature of semiconductor material for sample applies quantitative measurable simple stress.And in recent years along with the rise of superconduction and a series of new and high technologies, be the sport technique segment that accurate stress application of semiconductor and regulation and control become a key at low temperatures.
People have a lot of limitation to the method for semiconductor material stress application at present.For example:
Method by the bolt extruding, though the stress ratio that this method adds is bigger, its shortcoming is that the mechanical hook-up volume is excessive, and sample is cracked easily, and be difficult to high-vacuum installation perfect adaptation with realization low temperature, can exert an influence thereby have a strong impact on cool effect the quality of vacuum.In addition, this method or can only produce compressive stress, or can only produce tension stress, be difficult to accomplish produce tension stress and compressive stress simultaneously in covering device the inside.Thereby the extra-stress shadow that also can produce other unwanted directions when producing tension stress forms the influence of can not ignore to measuring.This method also requires wafer size to want enough greatly, and the order of magnitude that generally will arrive centimetre is powerless for undersized sample.
Two sample bonding methods, two different samples of thermal expansivity are bonding, and the sizes of shrinking owing to both after the cooling are different, thereby produce stress.Though this method is very little to the requirement of the volume of mechanical hook-up, its limitation clearly: the size of stress and the size of temperature present dependence, and also the thermal expansivity with material itself is dependence, and controlled degree of freedom is very little.And measure the back sample that finishes and also can't reclaim.
Therefore, press for a kind of method at present, accomplish that the mechanical hook-up volume is enough little, can be ideally and the Cryo Equipment combination, and can accomplish the simple stress that is applied is accomplished accurate quantitatively regulation and control continuously, can on a covering device, realize compressive stress and tension stress simultaneously, can measure small sample, and can be simultaneously and the device of temperature-controlling system perfect adaptation.
Summary of the invention
The objective of the invention is to overcome existing stress, to apply in the technology volume big, and device is complicated, and the little and Cryo Equipment of controllable degrees of freedom provides a kind of piezoelectric actuator and relevant parts of utilizing to reach this purpose method in conjunction with the characteristics of difficulty.
Concrete steps comprise:
1) choose a piezoelectric actuator, described piezoelectric actuator can be by the stress that bias adjustment applied to the change piezoelectric ceramics;
2) two " U " shape red copper caps are fixed on described piezoelectric actuator two ends, be used for fixing sample and heat conduction, a red copper cap is fixed on screw on the heat-transfer metal probe of small-sized Dewar flask, another red copper cap is linked to each other with the heat transfer probe of Cryo Equipment by the red copper heat conductive filament;
3) use a red copper heat conductive filament to be connected on the described red copper cap, be used for realizing evenly heat conduction rapidly;
4) use seccotine that the semiconductor samples two ends are bonded on two " U " shape copper billets;
5) bias voltage of piezoelectric ceramics on the change piezoelectric actuator applies continuously adjustable uniaxial stress to described semiconductor samples.
Further, sample can intactly be taken off in the bonded part of adopting acetone to soak described semiconductor samples and red copper cap after peptization is separated.
Further, the size of described red copper cap can make piezoelectric ceramics put the groove of red copper cap accurately into.
Further, the degree of depth of the groove of described red copper cap can make the length of semiconductor samples than at least 2 millimeters greatly in the slit between two red copper caps.
Further, described seccotine is the glue that can guarantee cohesive strength at low temperatures.
Further, described soak time is between 30 minutes to 1 hour.
This beneficial effect of the invention:
1) volume is little, need not the complicated machinery device, can with the perfect adaptation of vacuum and low temperature device;
2) stress that is applied can be realized linearity, and is two-way adjustable continuously, and can calculate strain;
3) thermal conductivity is good, can make sample accurately cooling rapidly;
4) sample is not fragile in the use, can can't harm recovery sample after finishing using.
Description of drawings
Fig. 1 is the side schematic view of the device of employing the inventive method;
Fig. 2 is the front schematic view of the device of employing the inventive method.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Fig. 1 is the side schematic view of the device of employing the inventive method; Fig. 2 is the front schematic view of the device of employing the inventive method.As depicted in figs. 1 and 2, the two ends of semiconductor wafer sample 4 are bonded on two red copper caps 2 with seccotine, put it into then in the 100-200 degree constant temperature oven and to place 15 minutes or place 30 minutes at normal temperatures so that glue reaches curing, (for example: Dewar flask), all contacts preferably use the cryogenic vacuum grease to promote contact then whole device fixedly to be fixed on Cryo Equipment.The electrode of piezoelectric ceramics 3 is drawn and is connected on the constant voltage dc source from the vacuum chamber of Cryo Equipment.Cryo Equipment begins to vacuumize up to meeting the cooling requirement, pours into liquid nitrogen or liquid helium then in Cryo Equipment.This moment, heat passed through the probe 1 of Cryo Equipment, red copper cap 2, and red copper heat conductive filament 5 passes to the two ends of sample 4, and the temperature of sample 4 also reduces rapidly then, because sample 4 sizes are enough little, so temperature-fall period is very fast.Can reach stable temperature in general 1-2 minute.Just can come to apply voltage afterwards by constant voltage dc source to piezoelectric ceramics 3.Voltage swing can positive and negative continuous adjusting, and the stress that is applied on the sample 4 is linear change continuously thereupon also.After measuring or related work finishes, the operational analysis pure acetone soaked sample and red copper cap 2 bonding parts 1 hour at normal temperatures, and the glue between sample 4 and the red copper cap 2 just can be dissolved, thus taking off of can can't harm of sample.
In the above-mentioned steps, described red copper cap 2 be shaped as U-shaped, the groove 6 that the size of red copper cap 2 just in time can be put red copper cap 2 into piezoelectric ceramics 3 is as the criterion.The degree of depth of red copper cap groove 6 need make the length of semiconductor wafer 4 (sample) greater than more than the slit 2mm between two red copper caps 2.
In the above-mentioned steps, the seccotine that is adopted must be the glue that can guarantee cohesive strength at low temperatures, for example commercially available 502 or deoxidation acetal glue.After the bonding, need to wait for adhesive curing that for commercially available 502 seccotines, can place and quicken to solidify, general curing needs 15 minutes in the constant temperature oven of 100-200 degree in 100-200 degree constant temperature oven.
Needing in the above-mentioned steps to guarantee has good thermo-contact between the heat transfer probe 1 of red copper cap 2 and Cryo Equipment, and the most handy cryogenic vacuum grease comes contact-enhancing and heat conduction.
In the above-mentioned steps, a branch of or a few bundle copper wire of heat conductive filament's 5 usefulness is entwined, and quality is soft and heat conduction is good, need guarantee that it has good thermo-contact in fixing on red copper cap 2, and the most handy cryogenic vacuum grease comes contact-enhancing and heat conduction.Red copper heat conductive filament 5 length is to be as the criterion less times greater than installing total length, not contacting with the Cryo Equipment vacuum chamber and sample is freely extended.
In the above-mentioned steps, can use general scolding tin that electrode is welded on the relevant pin
In the above-mentioned steps, vacuum plant can be Dewar flask or similar device, pours into liquid nitrogen or liquid helium and realize cooling after vacuumizing, and realizes temperature control with temperature controller.The voltage of piezoelectric ceramics 3 can apply with general D.C. regulated power supply, and the strain size of sample 4 can be by the physical dimension of this device, and the technical parameter of piezoelectric ceramics 3 and institute's making alive size are calculated.Piezoelectric ceramics 3 can extend also at low temperatures and can shorten, and elongation is alive positive and negative consistent with institute with shortening.Therefore can realize two-way regulatable simple stress.
In the above-mentioned steps, acetone is commercially available analysis pure acetone, general soak time at 30 minutes about 1 hour.
Below be a specific embodiment:
1) using U-shaped red copper cap 2 overall dimensions is 11 * 5 * 6.5mm, and depth of groove is 2mm, and groove both sides outer wall thickness is 0.5mm, and piezoelectric ceramics 3 is of a size of 5 * 5 * 9mm.
2) sample 4 length are 7mm, and thickness 0.5mm was 30 cycles, prolong the GaAs/AlGaAs superlattice of [001] direction growth, and substrate is GaAs, and sample prolongs the cutting of [110] direction.Use commercially available " An Tegu " seccotine that two ends are bonded on two red copper caps 2, then with hair drier to the bonding part blowing hot-air, continue 15 minutes.
3) a red copper cap 2 usefulness screws are fixed on the heat-transfer metal probe 1 of small-sized Dewar flask, the junction adopts the cryogenic vacuum grease to strengthen contact and heat conduction.
4) another red copper cap 2 is linked to each other with the heat transfer probe 1 of Cryo Equipment by red copper heat conductive filament 5, the junction is adopted and has been strengthened contact and heat conduction with the cryogenic vacuum grease.
5) with two electrodes of piezoelectric ceramics 3 and two pins in the small-sized Dewar flask, welding process is used general commercially available scolding tin welding, and the respective pins outside Dewar flask is connected on the D.C. regulated power supply.
6) with vacuumizing after the whole Dewar flask sealing, pour into liquid nitrogen cooling then, the vacuum chamber of Dewar flask leaves glass window.The cooling back adopts this covering device to measure the sample reflection of polarization difference spectrum of different stress at low temperatures, and the plane optical anisotropy of sample is along with being linear change with [110] simple stress size that direction applied as can be seen.The scope of added strain ± 1.4 * 10
-4
7) measure the back that finishes with the bonded part that acetone soaks sample 4 and red copper cap 2, separate up to peptization, take off sample, sample 4 is excellent.
The front has specifically described embodiment of the present invention, be to be understood that, for a people with the common skill in present technique field, under the situation that does not deviate from scope of the present invention, above-mentioned and in additional claim, change and adjust in the special scope of the present invention that proposes and to reach purpose of the present invention equally.
Claims (6)
1. a method that applies continuously adjustable uniaxial stress at low temperatures for semiconductor samples is characterized in that, comprising:
1) choose a piezoelectric actuator, described piezoelectric actuator can be by the stress that bias adjustment applied to the change piezoelectric ceramics;
2) two " U " shape red copper caps are fixed on described piezoelectric actuator two ends, be used for fixing sample and heat conduction, a red copper cap is fixed on screw on the heat-transfer metal probe of small-sized Dewar flask, another red copper cap is linked to each other with the heat transfer probe of Cryo Equipment by the red copper heat conductive filament;
3) use a red copper heat conductive filament to be connected on the described red copper cap, be used for realizing evenly heat conduction rapidly;
4) use seccotine that the semiconductor samples two ends are bonded on two " U " shape copper billets;
5) bias voltage of piezoelectric ceramics on the change piezoelectric actuator applies continuously adjustable uniaxial stress to described semiconductor samples.
2. the method for claim 1 is characterized in that, sample can intactly be taken off in the bonded part of adopting acetone to soak described semiconductor samples and red copper cap after peptization is separated.
3. the method for claim 1 is characterized in that, the size of described red copper cap can make piezoelectric ceramics put the groove of red copper cap accurately into.
4. the method for claim 1 is characterized in that, the degree of depth of the groove of described red copper cap can make the length of semiconductor samples than at least 2 millimeters greatly in the slit between two red copper caps.
5. the method for claim 1 is characterized in that, described seccotine is the glue that can guarantee cohesive strength at low temperatures.
6. method as claimed in claim 2 is characterized in that described soak time is between 30 minutes to 1 hour.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2008101022036A CN101539505B (en) | 2008-03-19 | 2008-03-19 | Method for applying continuously adjustable uniaxial stress to semiconductor samples at low temperature |
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| CN2008101022036A CN101539505B (en) | 2008-03-19 | 2008-03-19 | Method for applying continuously adjustable uniaxial stress to semiconductor samples at low temperature |
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| CN101539505A CN101539505A (en) | 2009-09-23 |
| CN101539505B true CN101539505B (en) | 2010-12-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102866065A (en) * | 2012-09-10 | 2013-01-09 | 中国科学院半导体研究所 | Continuous pressurizing device |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895532B (en) * | 2016-06-14 | 2018-11-16 | 西安电子科技大学 | [110] uniaxial tensile stress NMOS device and preparation method thereof based on [100]/(001) channel |
| CN110057657A (en) * | 2019-04-12 | 2019-07-26 | 金华职业技术学院 | A kind of sample stress bringing device |
| CN114839009B (en) * | 2022-04-18 | 2023-02-07 | 北京师范大学 | Device and method for de-twining layered single crystal sample |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4777829A (en) * | 1987-10-02 | 1988-10-18 | The Firestone Tire & Rubber Company | Multi-station piezoelectric load cycle counter |
| CN2879166Y (en) * | 2006-02-07 | 2007-03-14 | 同济大学 | Concrete long-time invariable monaxial pressure stress loading inetrument |
-
2008
- 2008-03-19 CN CN2008101022036A patent/CN101539505B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4777829A (en) * | 1987-10-02 | 1988-10-18 | The Firestone Tire & Rubber Company | Multi-station piezoelectric load cycle counter |
| CN2879166Y (en) * | 2006-02-07 | 2007-03-14 | 同济大学 | Concrete long-time invariable monaxial pressure stress loading inetrument |
Non-Patent Citations (2)
| Title |
|---|
| JP特开2007－285932A 2007.11.01 |
| M. Shayegan，etal.Low-temperature, in situ tunable, uniaxial stress measurements in semiconductors using a piezoelectric actuator.《APPLIED PHYSICS LETTERS》.2003,第83卷(第25期),第5235－5237页. * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102866065A (en) * | 2012-09-10 | 2013-01-09 | 中国科学院半导体研究所 | Continuous pressurizing device |
| CN102866065B (en) * | 2012-09-10 | 2014-07-30 | 中国科学院半导体研究所 | Continuous pressurizing device |
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| CN101539505A (en) | 2009-09-23 |
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