CN101536158A - Method for cleaning a substrate - Google Patents
Method for cleaning a substrate Download PDFInfo
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- CN101536158A CN101536158A CNA2007800422482A CN200780042248A CN101536158A CN 101536158 A CN101536158 A CN 101536158A CN A2007800422482 A CNA2007800422482 A CN A2007800422482A CN 200780042248 A CN200780042248 A CN 200780042248A CN 101536158 A CN101536158 A CN 101536158A
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- substrate
- surface tension
- azeotrope
- water
- deionized water
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5031—Azeotropic mixtures of non-halogenated solvents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention discloses the method for cleaning a substrate by dispensing to substrate an azeotropic mixture which is easily evaporated at the room temporature after producing the azeptropic mixture by controling the mixture ratio of a deionized water (DIW) and a liquid whose surface tenstion is lower than the surface tension of water. The method includes rotating the substrate, dispensing a cleaning liquid to the surface of the rotating substrate, producing an azeotropic mixture by mixing a deionized water with a liquid whose surface tension is lower than the surface tension of water, dispensing the azeotropic mixture to the surface of the rotating substrate and finishing drying by providing the substrate with an inert gas.
Description
Technical field
[0001] the present invention relevant for a kind of in producing semi-conductive processing procedure the method for clean substrate or wafer, especially, relevant for a kind of method of producing azeotrope and using its clean substrate.
Background technology
[0002] influence of the performance of integrated circuit, reliability and the output wafer that is subjected to using in the production process, or be subjected to producing the influence that remains in the unnecessary physical/chemical impurity of element surface after finishing.
[0003] minimum feature along with element is reduced to sub-micrometer range, oxidation and graphical before neatly the technology on clean substrate surface become and need more.The technology on clean semiconductor wafer surface is divided into those wet chemistry cleans method, dry clean method, steam (vapor) method etc. substantially, and the wet cleaning method is the method for using always.In various wet cleaning methods, the RCA clean method that comprises standard clean 1 (SC-1) and standard clean 2 (SC-2) is widely used.Usually, the wet cleaning of silicon wafer carries out like this: about 50-100 wafer is put into cleaning solutions such as SC-1 or SC-2 together soak, and with deionized water (DI water) rinsing.Yet this technology that wafer is soaked in cleaning solution together has a problem, and inevitably, this technology is very slow, because this technology relies on the liquid stream that flows through wafer, and wafer need suspend to carry out rinsing.
[0004] therefore, a kind of like this demand is in continuous growth: because the preliminary treatment of semiconductor wafer is required the shorter time, so faster to the cleaning and the rinsing of wafer.
[0005] correspondingly, application number is that 09/892,130 U.S. Patent application has disclosed substrate rinsing in a kind of modifying device with the method for cleaning single-wafer.According to this method, wafer is exposed in the cleaning solution, high speed rotating then, then, with the deionized water distribution or spray on the rotating wafer to remove cleaning solution from this wafer.
[0006] yet, even if this wafer high speed rotating, because the very weak centrifugal force and the surface tension of deionized water, deionized water can be in the wafer central uplift, so and because centrifugal force is thin more the closer to the peripheral deionization moisture film of wafer.
[0007] at this time, the chemicals of high concentration is dissolved in the deionized water soon, therefore, be effectively although use rinsed with deionized water at first at rinsing process, diffusion rate can reduce as time goes by and the deionized water of wafer central uplift still exists.
[0008] in order to address the above problem, application number is 09/892, it is a kind of after chemicals distribution and/or deionized water distribution that 130 U.S. Patent application provides, solution (can be liquid or gas form) is distributed to the method for wafer, the surface tension of this solution is lower than the surface tension of water, for example isopropyl alcohol (IPA).According to this method, in the incipient stage of rinsing, use deionized water to remove chemicals, and in the final stage of rinsing with highly dissoluble, use IPA to reduce the layer of diw of wafer central uplift, thus accelerate dissolution.
[0009] in another embodiment, it has disclosed a kind of IPA steam or liquid of spraying distribute deionized water after chemicals distribution before to carry out the method for rinsing.In another embodiment, it has disclosed and has a kind ofly a bit applied IPA liquid by nozzle in certain of wafer, simultaneously, applies deionized water by another nozzle at another point of wafer.
[0010] and, its also disclosed a kind of under the temperature higher than room temperature (for example 60-70 ℃) add the method for hot deionized water, with by providing heat to quicken the diffusion of chemicals to deionized water.
[0011] and, it has also disclosed a kind of after rinsing, with than at the higher speed of wafer rinse cycle medium velocity rotation wafer, perhaps wafer is used the method that nitrogen comes drying crystal wafer.
[0012] yet, although prior art has disclosed the method for using deionized water and the surface tension liquid lower than the surface tension of water to come clean substrate, but during not open clean substrate at room temperature, by adjusting the mixed proportion of deionized water and isopropyl alcohol, simplify the method for drying process.
[0013] about this point, the present invention has found by use azeotrope in the technology of clean substrate, the method of cleaning, rinsing and dry substrate more effectively at room temperature, this azeotrope is to make by mixing deionized water and the surface tension liquid (particularly, isopropyl alcohol) lower than the surface tension of water.
[0014] correspondingly, the invention provides deionized water and the surface tension liquid lower, and use the azeotrope made the like this method of clean substrate more effectively at room temperature than the surface tension of water by in the technology of clean semiconductor, using with suitable mixed.
Summary of the invention
[0015] target of the present invention is, the ratio of a kind of deionized water that uses when suitably being adjusted at clean semiconductor and the surface tension liquid lower than the surface tension of water is provided, be manufactured on method than the azeotrope that more easily evaporates under the low temperature of the evaporating temperature of deionized water and IPA, and the method for using the effective clean substrate of this azeotrope.
[0016] another target of the present invention is, a kind of online static mixer that is connected in the distributor of semiconductor cleaning device by use is provided, manufacturing has the method for the azeotrope of the deionized water of constant composition and the surface tension liquid lower than the surface tension of water, and the method for using the effective clean substrate of this azeotrope.
[0017] for finishing above-mentioned target, the invention provides a kind of by suitably adjusting the ratio of deionized water and the surface tension liquid lower than the surface tension of water, the azeotrope that manufacturing can at room temperature be evaporated easily is with the method on rinse substrate surface in cleaning course.And the present invention also provides by aforementioned azeotrope being distributed on the wafer to clean the method for this wafer.
[0018] method according to clean substrate of the present invention comprises following steps: rotate this substrate; Cleaning solution is distributed to the surface of this rotary plate; Make azeotrope by mixing deionization (DI) water and the surface tension liquid lower than the surface tension of water; And this azeotrope is distributed to the surface of this rotary plate, wherein the boiling point of this azeotrope is lower than the boiling point of this deionized water and this liquid of sneaking into.
[0019] preferably, further be included in according to the method for clean substrate of the present invention after the step of this azeotrope of distribution, using gases impacts the center of this rotary plate, or the steam of the liquid that surface tension is lower than the surface tension of water is distributed to the step of this rotary plate.
[0020] preferably, further be included in according to the method for clean substrate of the present invention after the step of this azeotrope of distribution, the steam of simultaneously that gas and surface tension is low than the surface tension of water liquid is distributed to the step of this rotary plate.
[0021] preferably, this azeotrope of using in the method according to clean substrate of the present invention is by online static mixer manufacturing with provide.
[0022] preferably, method according to clean substrate of the present invention, the inflow of the impurity of outside, chamber can be stoped by the nitrogen film, and this nitrogen film is to form by the top the supply of nitrogen around the inner space in this chamber from this chamber, and wherein the cleaning of this substrate is carried out in this chamber.
[0023] the present invention is by using the easy azeotrope that evaporates under the relative lower temperature with the evaporation of liquid temperature than deionized water, clean wafer effectively, this azeotrope are to make by the composition that appropriate adjustment is used for the deionized water of clean substrate and the surface tension liquid lower than the surface tension of water.
[0024] the present invention has the azeotrope of the deionized water of constant composition and the surface tension liquid lower than the surface tension of water, effectively clean wafer by use.This azeotrope is to be made by the online static mixer of this distributor that is connected in this device, with clean semiconductor.
Description of drawings
[0025] Fig. 1 is, according to the method for clean substrate of the present invention, in order to the cross-sectional view strength of the embodiment of the single assembly of clean substrate.
[0026] Fig. 2 is, the cross-sectional view strength of the embodiment of the device of the fixing base that uses in the method according to clean substrate of the present invention.
[0027] Fig. 3 is, the cross-sectional view strength of the embodiment of the online static mixer that in the device of cleaning monolithic substrate, uses, and this online static mixer is made azeotrope by mixing deionized water and isopropyl alcohol.
[0028] reference number of main element in the accompanying drawing:
The device of [0029] 100 fixing base
[0030] 102 substrate (or wafer)
[0031] 104,106 distributors
[0032] 108 online static mixer
[0033] 110,114 flowmeters
[0034] 112,116 spike pumps (spike pump)
[0035] 120 chamber
Embodiment
[0036] below, with reference to the accompanying drawings, several preferred embodiments of the present invention is made description in further detail.
[0037] Fig. 1 is the cross-sectional view strength of application according to the embodiment of the device of the method cleaning monolithic substrate of clean substrate of the present invention.
[0038] as shown in Figure 1, the device 10 in order to clean substrate that uses in the method according to clean substrate of the present invention comprises: apparatus for fixing substrate 100 (being also referred to as " chuck "), with at top fixing base 102 and make its rotation; Distributor 104,106 will be being distributed on the surface of substrate of rotation in order to the cleaning solution of rinsing or deionized water etc.; Online static mixer (108) is connected in distributor 106, and the liquid (for example deionized water and isopropyl alcohol) that will be distributed to substrate 102 surfaces in order to mixing is to make azeotrope; Flowmeter 110,114 is connected in this online static mixer, with flowing of the liquid that regulate to flow into this online static mixer; Spike pump 112,116 is with to this online static mixer supply fluid; And chamber 120 is to carry out the board cleaning that separates with external environment condition.
[0039] and, by 120 top the supply of nitrogen, form nitrogen curtain film (N around in 120 inner spaces, chamber of carrying out board cleaning from the chamber
2Curtain film), thus prevent the inflow of the impurity of chamber outside.
[0040] below,, the embodiment according to the device 100 of the fixing base of use in the device 10 of clean substrate of the present invention is specifically described with reference to figure 2.
[0041] Fig. 2 is the cross-sectional view strength of embodiment of the device of the fixing base that uses in the device according to clean substrate of the present invention.
[0042] as shown in Figure 2, the device 200 (chuck) of fixing base comprises according to an embodiment of the invention: upper plate 21, this upper plate 21 comprises porous plate 23, irregular and a plurality of holes 25 that distributing equably on this porous plate 23, lower plate 22, this lower plate 22 is connected in the bottom of upper plate 21, to set up gas reservoir 26, in all being stored in from the chuck outside gas by axle (spindle) inflow, chip support 24, fix this substrate by closely contacting with the side of substrate, and sensing element, this sensing element comprises in order to respond to wafer at the existence at these porous plate 23 centers and the transducer of Position Approximate, and wherein this porous plate 23 is circular, is positioned at the center of this top panel 21.
[0043] when gases such as nitrogen flows out from the gas reservoir 25 between upper plate 21 and lower plate 22 and flows to substrate by a plurality of holes 25 on the porous plate 23, the substrate that is connected upper plate 21 tops is floating because of the pressure of eluting gas, and the side of this floating substrate is fixed by substrate holder 24.
[0044] and, as shown in Figure 2, but a plurality of holes 25 that form on porous plate 23 distribute in the irregular mode that is similar to the shape of foam sponge uniformly.Porous plate 23 constitutes by representing the high functional plastics polytetrafluoroethylene of best chemical-resistant (PTFE is commonly referred to " Teflon "), therefore, can not react with the chemicals that is used for processing substrate, also can not generate any impurity.
[0045] size and the quantity in the hole 25 that forms on the porous plate 23 can be adjusted, and are preferably dimensioned to be 5-800um, and the volume in hole 25 is preferably the 5-90% of porous plate 23 volumes.And, spray to this wafer by hole 25 effluent airs with irregular direction.
[0046] in the present embodiment, 21 of upper plates comprise the porous plate 23 of a circle, yet porous plate 23 can have Any shape, polygon etc. for example, and, can arrange that a plurality of centers with respect to chuck 10 become point-symmetric a plurality of porous plate.
[0047] according to the method for clean substrate of the present invention, by using aforementioned chuck 100, the floating and stream of nitrogen gas rotation of from porous plate 23, being flowed out of substrate 102.Usually, use SC-1 and SC-2 as semiconductor cleaning using ionic liquids liquid, these liquid are sprayed on the surface of rotary plate 102, should the surface with rinsing.According to the method for clean substrate of the present invention, the technology of these substrate 102 application cleaning solutions and the technology of rinse substrate are finished in same device 10.
[0048] according to an embodiment of the method for clean substrate of the present invention, for rinse substrate 102, when chuck 100 rotary plates 102 (cleaning solutions such as SC-1 and SC-2 spray to this substrate 102), the mixed solution (this solution is the state of azeotrope) of deionized water (DIW) and isopropyl alcohol (IPA) is distributed the surface that device 106 is distributed to substrate 102.
[0049] common, deionized water has highly dissoluble in ionic contamination, and buy and handle can be not expensive, and can effectively remove pollutant, because in the incipient stage of rinsing, the chemicals that remains in the high concentration on the substrate is diffused into very soon in the deionized water and reduces.Because this reason, deionized water is widely used in board cleaning technology.
[0050] yet, when the substrate that has cleaning solution or etching liquid to cover is used deionized water, for example, during rinsing, the centrifugal force that the substrate rotation produces is strong more the closer to the circumference of this substrate, and therefore the deionization moisture film that forms on this substrate surface becomes thin more the closer to circumference, yet, at the center of this substrate, centrifugal force relatively a little less than, Here it is deionized water is in the reason of central elevation.That is to say that the centrifugal force that the substrate rotation produces makes the deionization moisture film become thin more the closer to the circumference of this substrate, yet the centrifugal force of substrate center is very weak, can swells because of the surface tension of deionized water.
[0051] as mentioned above, along with time lapse, pollutant reduces gradually to the diffusion of deionized water, and plasma water is in the central elevation of this substrate.Therefore, for rinsing and dry substrate effectively, need to reduce the bump of the plasma water that substrate center forms.
[0052] according to the method for clean substrate of the present invention, by with appropriate mixed deionized water (1) and isopropyl alcohol (IPA:(CH3) 2CHOH) liquid (1) prepares azeotrope, and the surface that this azeotrope is applied to this substrate is with this substrate of rinsing.
[0053] although isopropyl alcohol in ionic contamination than water more indissoluble separate, but its surface tension is lower than the surface tension of water, therefore, when isopropyl alcohol mixes with deionized water, the integral surface warp tension ratio water of this mixture is low, therefore, the protrusion branch of the deionized water that forms in this substrate center reduces.
[0054] and, this isopropyl alcohol that can make azeotrope can not become pure by the moisture of removing distillation.Azeotrope refers to the liquid mixture of the state that is the solution that can produce azeotropic.Usually, the formation of steam (this steam is poised state with the solution that two kinds of compositions mix) is different from the formation of its solution.When the mixed solution with liquid was distilled into each component liquids, this fact was set up.When solution distilled, the formation of steam was different with the formation of original solution usually, and a kind of composition is more than another kind of composition.Therefore, as for the formation of solution self, the concentration of another kind of composition increases gradually, and the boiling point of solution also correspondingly constantly raises.
[0055] yet, have the characteristic that the solution of specific formation has been showed neat liquid, that is to say that in still-process, the formation of solution is consistent with the formation of steam, therefore, along with the continuous boiling at specified temp, the composition that constitutes solution remains unchanged.Like this, in mixtures of liquids solution, the boiling that can not change formation that takes place at specified temp is called " azeotropic ", and the temperature (boiling point) that this azeotropic takes place is called as " azeotropic point ".
[0056] as previously mentioned, the mixtures of liquids solution with specific formation that can produce azeotropic is called as " azeotrope ", this azeotrope is divided into " low boiling mixture " and " high boiling mixture ", wherein the azeotropic of low boiling mixture occurs in the minimum boiling point of this solution system, and the azeotropic of high boiling mixture occurs in maximum boiling point.
[0057] according to the present invention, azeotrope is under certain mixed proportion isopropanol liquid and deionized water to be mixed, wherein this mixed proportion is between 10-90:90-10, preferably, when the ratio of isopropanol liquid and deionized water is about 95.6:4.4, azeotropic occurs in 80.4 ℃ under 1 atmospheric pressure, and this boiling point is lower than the boiling point of the boiling point (99.97 ℃) of water and isopropyl alcohol (82.3 ℃) under this air pressure, and this is the minimum azeotrope of deionized water and isopropyl alcohol.
[0058] therefore, be distributed to by the azeotrope with isopropyl alcohol and deionized water on the substrate of rotation, the cleaning procedure of this substrate, especially rinsing and drying process can significantly be improved, and reason is following three kinds of effects.Especially, at first because the centrifugal force that substrate rotation produces, the deionized water on the substrate surface and the coverlay of isopropanol liquid the closer to the circumference of substrate become thin more.
[0059] secondly, the surface tension of isopropyl alcohol is lower than the surface tension of water, this has reduced the integral surface tension force of deionized water and isopropanol mixture, the result is, the film that is formed by deionized water and isopropyl alcohol on this substrate surface is thinner than the film that is only formed by deionized water, particularly, the thickness of the bump of the film of this substrate center reduces.And, when deionized water mixes with proper ratio with isopropyl alcohol, have that more lower boiling azeotrope is manufactured to come out, therefore, just easier generation of evaporation at room temperature.The result is that the process quilt of rinsing and dry substrate significantly improves during clean substrate.
[0060] and, according to the method for clean substrate of the present invention, only used a spot of isopropyl alcohol, therefore can select very expensive isopropyl alcohol.
[0061] and, according to the method for clean substrate of the present invention, use a spot of isopropyl alcohol, can effectively prevent from substrate, to stay watermark.
[0062] preferably, as shown in Figure 1, the method of clean substrate of the present invention can further comprise, and after the azeotrope with deionized water and isopropyl alcohol is distributed to the step on surface of substrate 102, impacts the step at substrate 102 centers by distributor 104 usefulness nitrogen.With the isopropyl alcohol that is mixed with deionized water, the impact of nitrogen has increased the physical force to the bump of this substrate, thereby has reduced the thickness of the bump of substrate center.
[0063] and, preferably, after the azeotrope with deionized water and isopropyl alcohol was distributed to the surface of substrate 102, the center that can add IPA vapor to substrate 102 by distributor 104 was to reduce the thickness of the bump that substrate center forms.At this moment, the isopropyl alcohol that adds substrate 102 centers to is dissolved in the deionized water, thereby has reduced surface tension, and the result is that the thickness at substrate surface center reduces.
[0064] and, preferably, after the azeotrope with deionized water and isopropyl alcohol was distributed to the surface of substrate 102, the center that can add the steam of nitrogen and isopropyl alcohol to substrate 102 simultaneously with distributor 104 was to reduce the thickness of the bump that substrate center forms.
[0065] Fig. 3 is the cross-sectional view strength of the embodiment of the online static mixer that uses in the device of cleaning monolithic substrate, and this online static mixer is made azeotrope by mixing deionized water and isopropyl alcohol.
[0066] as shown in Figure 3, this online static mixer 108 is the devices that are used for making azeotrope, the liquid of the deionized water (DIW (1)) of its isopropanol liquid (IPA (1)) by receiving 112 supplies of spike pump and 116 supplies of spike pump flows and mixes both and make this azeotrope, wherein the flow velocity of isopropyl alcohol is controlled by flowmeter 110, and the flow velocity of deionized water is by flowmeter 114 controls.
[0067] if adopts pre-hybrid system and from installing the mixture of outside supplying deionized water and isopropyl alcohol, then need larger sized device, and as time goes by, it is different with the steam pressure of isopropyl alcohol that the steam pressure of the deionized water in the mixing channel of this device becomes, thereby the mixing ratio regular meeting of deionized water and isopropyl alcohol changes.
[0068] result is exactly, and can't keep the best proportion of deionized water and isopropyl alcohol, thereby can not produce the azeotrope with minimum boiling point.
[0069] therefore, as shown in Figure 1, the device 10 that uses in the board cleaning method of the present invention is equipped with online static mixer 108, to mix deionized water and isopropyl alcohol in device 10.
[0070] common, online static mixer 108 is a kind of like this devices: the several elements 302 in device, be fixed in the pipe continuously from right to left, the fluid of flowing through is mixed continuously, simultaneously the fluid of laminar flow is converted into the fluid of turbulent flow, with two or more fluids of effective mixing, gas and powdery object.This online static mixer is played the part of and cut apart, oppositely and mix three kinds of roles: cut apart fluid stream, its direction of reversing also transforms it transmission the time in pipe when it, thereby finishes good mixing.Therefore, use online static mixer 108 to help to increase productivity, because when obtaining the better mixing effect, by simplification, continuation, minimizing time and reduction production cost (for example passing through energy savings), it can make the management of whole mixture length be more prone to.
[0071] by adopting above-mentioned online static mixer, by isopropanol mixture being distributed to the surface of this substrate, the composition of the azeotrope of deionized water and isopropyl alcohol is remained and constant that time lapse is irrelevant, according to the method for clean substrate of the present invention clean substrate more effectively.
[0072] provide above the description of several embodiment so that those skilled in the art can freely implement the present invention.Various modifications to those embodiment will be readily apparent to persons skilled in the art, and the general principle that herein limits can be applied among other the embodiment, and do not exceed thought of the present invention and scope.Therefore, the embodiment that the present invention is not limited to disclose herein, but comprise the wide region of the principle that discloses with the present invention and the corresponding equivalent of novel feature.
Claims (10)
1. the method for a clean substrate, wherein said method comprises following steps:
Rotate this substrate;
Cleaning solution is distributed to the surface of this rotary plate;
Make azeotrope by mixing deionization (DI) water and the surface tension liquid lower than the surface tension of water;
This azeotrope is distributed to the surface of this rotary plate; And
By finishing drying to this supply substrate inert gas (nitrogen, Ar, Ne etc.), wherein the boiling point of the liquid that the boiling point of this azeotrope is lower than the surface tension of water than this deionized water and this surface tension is low.
2. method according to claim 1, wherein the liquid that this surface tension is lower than the surface tension of water is proton polar solvent, especially C
nH
2n+1OH (n=1～10).
3. method according to claim 1, wherein this azeotrope is provided by online static mixer.
4. method according to claim 1 comprises further that the supply of nitrogen is to form the nitrogen film around the inner space in this chamber from the top in chamber, and wherein the cleaning of this substrate is carried out in this chamber.
5. according to each the described method among the claim 1-4, further be included in after this azeotrope of distribution, using gases impacts the center of this rotary plate.
6. method according to claim 5, wherein this gas is nitrogen.
7. according to each the described method among the claim 1-4, further be included in after this azeotrope of distribution, the steam of the liquid that this surface tension is lower than the surface tension of water is distributed to this rotary plate.
8. method according to claim 7, wherein the liquid that this surface tension is lower than the surface tension of water is isopropyl alcohol.
9. according to each the described method among the claim 1-4, further be included in after this azeotrope of distribution, the steam of the liquid that gas and this surface tension is lower than the surface tension of water is distributed to this rotary plate.
10. method according to claim 9, wherein this gas is nitrogen, and this surface tension liquid lower than the surface tension of water is proton polar solvent, especially C
nH
2n+1OH (n=1～10).
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060112014A KR100862911B1 (en) | 2006-11-14 | 2006-11-14 | Method for cleaning a substrate |
| KR1020060112014 | 2006-11-14 | ||
| KR10-2006-0112014 | 2006-11-14 | ||
| PCT/KR2007/005633 WO2008060069A1 (en) | 2006-11-14 | 2007-11-09 | Method for cleaning a substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101536158A true CN101536158A (en) | 2009-09-16 |
| CN101536158B CN101536158B (en) | 2012-01-11 |
Family
ID=39401843
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007800422482A Active CN101536158B (en) | 2006-11-14 | 2007-11-09 | Method for cleaning a substrate |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR100862911B1 (en) |
| CN (1) | CN101536158B (en) |
| TW (1) | TWI361451B (en) |
| WO (1) | WO2008060069A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113539900B (en) * | 2021-07-16 | 2023-09-19 | 长江存储科技有限责任公司 | Method and apparatus for drying wafers |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7021319B2 (en) | 2000-06-26 | 2006-04-04 | Applied Materials Inc. | Assisted rinsing in a single wafer cleaning process |
| KR100413030B1 (en) * | 2002-10-01 | 2003-12-31 | Tech Ltd A | Semiconductor wafer cleaning and drying apparatus |
| TW200303581A (en) * | 2002-02-28 | 2003-09-01 | Tech Ltd A | Method and apparatus for cleaning and drying semiconductor wafer |
| JP4333866B2 (en) | 2002-09-26 | 2009-09-16 | 大日本スクリーン製造株式会社 | Substrate processing method and substrate processing apparatus |
-
2006
- 2006-11-14 KR KR1020060112014A patent/KR100862911B1/en active IP Right Grant
-
2007
- 2007-11-02 TW TW096141461A patent/TWI361451B/en active
- 2007-11-09 WO PCT/KR2007/005633 patent/WO2008060069A1/en active Application Filing
- 2007-11-09 CN CN2007800422482A patent/CN101536158B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20080043444A (en) | 2008-05-19 |
| KR100862911B1 (en) | 2008-10-13 |
| TWI361451B (en) | 2012-04-01 |
| TW200822195A (en) | 2008-05-16 |
| CN101536158B (en) | 2012-01-11 |
| WO2008060069A1 (en) | 2008-05-22 |
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