CN101533840B - Capacitor device, resistor device and attitude measurement system using same - Google Patents
Capacitor device, resistor device and attitude measurement system using same Download PDFInfo
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- CN101533840B CN101533840B CN2009100829038A CN200910082903A CN101533840B CN 101533840 B CN101533840 B CN 101533840B CN 2009100829038 A CN2009100829038 A CN 2009100829038A CN 200910082903 A CN200910082903 A CN 200910082903A CN 101533840 B CN101533840 B CN 101533840B
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- 238000005516 engineering process Methods 0.000 claims abstract description 23
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- 239000007788 liquid Substances 0.000 claims description 20
- 238000005070 sampling Methods 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 10
- 239000007787 solid Substances 0.000 claims 2
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- 238000002161 passivation Methods 0.000 description 6
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- 230000001133 acceleration Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 206010034719 Personality change Diseases 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
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- 238000009826 distribution Methods 0.000 description 1
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- 238000004088 simulation Methods 0.000 description 1
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Abstract
The invention provides a capacitor device, a resistor device and an attitude measurement system using same. The capacitor device and resistor device are based on an integrated circuit technology. The capacitor device comprises an integrated circuit having one or more capacitors, one or more first electric conductors exposed outside the surface of the integrated circuit and correspondingly connecting the first pole plates of the one or more capacitors one by one, a seal chamber formed between the surface of the integrated circuit and the package of the integrated circuit and covering the one or more first electric conductors and one or more second electric conductors, and incompatible third electric conductor and insulator, which are arranged in the seal chamber. The resistor device comprises the integrated circuit, one or more sixth electric conductors or one or more seventh electric conductors exposed outside the surface of the integrated circuit, a seal chamber formed between the surface of the integrated circuit and the package of the integrated circuit and covering the one or more first electric conductors and one or more the seventh electric conductors, and incompatible eighth electric conductor and insulator, which are arranged in the seal chamber.
Description
Technical field
The present invention relates to sensor field, relate in particular to the measuring system of capacitive means, resistance device and this device of employing based on integrated circuit technology.
Background technology
A lot of fields in industrial production and daily life need the variation of inspected object attitude.A kind of measuring principle is to utilize gravity, and the capacitance of capacitor in the measuring instrument or the resistance value of resistor are changed along with the variation of measuring instrument attitude, thereby realizes measuring purpose.
The resistance value of resistor is relevant with the conductance of the length of resistance, sectional area and resistance material, and the conductance of the length of resistance, sectional area and resistance material changes under the effect of external force, and resistance value also changes thereupon.
Under action of gravity, capacitor changes with the measuring instrument attitude realizes that capacitance variation mainly contains two class methods.A kind of is that the pole plate that constitutes capacitor is fixed, and has two kinds of objectionable interminglings between the pole plate, and has the dielectric of differing dielectric constant.When the measuring instrument attitude changed, two kinds of dielectric distributions between capacitor plate also changed, thereby make capacitance change.Another kind is a pole plate fixed-site of capacitor, and another pole plate changes with the measuring instrument attitude, and its position with respect to fixed polar plate also changes thereupon, thereby makes capacitance change.The common principle of this two classes implementation method all is that the attitude variation of measuring instrument causes effective pole plate area change of capacitor, thereby is reflected as the variation of capacitance.According to the principle of utilizing the capacitor of gravity, the measuring instrument that a variety of Measuring Object attitudes change has appearred, the transducer or the measuring instrument of Measuring Object attitude for example is provided in the Chinese invention patent 86100001,86202257 and 88104645.
But the volume and the power consumption of above-mentioned traditional capacitor type or resistor-type sensing device are all bigger, are difficult to use in attitude to small-size object and change and measure, and also are difficult to satisfy the demand that each electronic product develops to small size, low-power consumption direction.In recent years, because the development of microelectric technique and micromachining technology, the microminiaturized direction of sensing device forward develops.
Summary of the invention
In view of this, the present invention overcomes defective and the deficiency in traditional attitude sensing device, and the attitude measurement system of capacitive means, resistance device and this device of employing based on integrated circuit technology is provided.
According to a first aspect of the invention, provide a kind of capacitive means,, having comprised: the integrated circuit of integrated one or more capacitor elements based on integrated circuit technology; One or more first electric conductors are integrated on the described integrated circuit and are exposed at the surface of described integrated circuit outward, connect one to one with first pole plate of described one or more capacitor elements; One or more second electric conductors are integrated on the described integrated circuit and are exposed at the surface of described integrated circuit outward; Seal chamber is formed between the encapsulation of the surface of described integrated circuit and integrated circuit, covers described one or more first electric conductor and described one or more second electric conductor; The 3rd electric conductor is positioned at described seal chamber; Insulator is positioned at described seal chamber, with described the 3rd electric conductor objectionable intermingling.
Further, first pole plate of described capacitor element is divided into a plurality of first pole plate parts, and described first electric conductor is divided into a plurality of first electric conductor parts accordingly, and described first electric conductor part partly connects with corresponding described first pole plate.
Further, first pole plate of described one or more capacitor elements substitutes the directly outer surface that is exposed at described integrated circuit of described one or more first electric conductors, and described seal chamber covers first pole plate and described one or more second electric conductor of described one or more capacitor elements.
Further, first pole plate of described capacitor element is divided into a plurality of first pole plate parts.
Further, described capacitive means also comprises: one or more the 4th electric conductors, be integrated on the described integrated circuit, and connect one to one with second pole plate of described one or more capacitor elements; One or more the 5th electric conductors are integrated on the described integrated circuit, connect one to one with described one or more second electric conductors.
According to a second aspect of the invention, provide a kind of resistance device, based on integrated circuit technology, having comprised: integrated circuit; One or more the 6th electric conductors are integrated on the described integrated circuit and are exposed at the surface of described integrated circuit outward; One or more the 7th electric conductors are integrated on the described integrated circuit and are exposed at the surface of described integrated circuit outward; Seal chamber is formed between the encapsulation of the surface of described integrated circuit and integrated circuit, covers described one or more the 6th electric conductor and described one or more the 7th electric conductor; The 8th electric conductor is positioned at described seal chamber; Insulator is positioned at described seal chamber, with described the 8th electric conductor objectionable intermingling.
Further, described resistance device also comprises: one or more the 9th electric conductors, be integrated on the described integrated circuit, and connect one to one with described one or more the 6th electric conductors; One or more the tenth electric conductors are integrated on the described integrated circuit, connect one to one with described one or more the 7th electric conductors.
According to a third aspect of the invention we, provide a kind of attitude measurement system, having comprised:
As the described capacitive means of first aspect/as the described resistance device of second aspect;
Capacitance/resistance value detection module is connected with described capacitance/resistance device, is used to detect and export the capacitance/resistance value of described capacitance/resistance device;
The capacitance/resistance value is handled and output module, is connected with described capacitance/resistance value detection module, is used to handle described capacitance/resistance value and exports attitude parameter.
According to a forth aspect of the invention, provide a kind of multidimensional attitude measurement system, having comprised:
A plurality of as the described attitude measurement system of the third aspect, be used to carry out attitude measurement, export a plurality of attitude parameters;
The multidimensional signal treatment system is connected with described a plurality of attitude measurement systems, is used for that described a plurality of attitude parameters are carried out multidimensional signal and handles, and realizes the multidimensional attitude measurement.
Capacitance/resistance device provided by the invention has different capacitance/resistance values according to the difference of its attitude, thereby can obtain attitude information according to measurement and processing attitude measurement system, for example information such as the angle of object, angular speed and angular acceleration to the capacitance/resistance value.The attitude measurement system of capacitive means provided by the invention, resistance device and this device of employing and multidimensional attitude measurement system adopt integrated circuit technology to realize, and be can monolithic integrated, has low-power consumption and microminiaturized characteristics.
Description of drawings
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in further detail, in the accompanying drawing:
Fig. 1 is the profile of capacitive means of the horizontal positioned of one embodiment of the invention;
Fig. 2 is the profile of capacitive means of the horizontal positioned of another embodiment of the present invention;
Fig. 3 is the profile of capacitive means of the horizontal positioned of further embodiment of this invention;
Fig. 4 is the profile of capacitive means of the horizontal positioned of yet another embodiment of the invention
Fig. 5 is the vertical sectional side view of placing of capacitive means of one embodiment of the invention of Fig. 1;
Fig. 6 is the vertical orthogonal view of placing of the capacitive means that 8 capacitor elements are arranged of one embodiment of the invention;
Fig. 7 is the profile of resistance device of the horizontal positioned of one embodiment of the invention;
Fig. 8 is the vertical sectional side view of placing of resistance device of one embodiment of the invention of Fig. 7;
Fig. 9 is the vertical orthogonal view of placing of the resistance device that 8 equivalent resistances are arranged of one embodiment of the invention;
Figure 10 is the structured flowchart of the attitude measurement system of one embodiment of the invention;
Figure 11 is the 3 d pose measuring principle of measurement system figure of one embodiment of the invention.
Embodiment
In embodiment, with CMOS (Complementary Metal OxideSemiconductor, complementary metal oxide semiconductors (CMOS)) integrated circuit technology is that example is described capacitive means, resistance device and according to the attitude measurement system of this capacitance/resistance device.
Fig. 1 is the profile of capacitive means of the horizontal positioned of one embodiment of the invention.As shown in Figure 1, comprise in the capacitive means: the encapsulation of the integrated circuit of an integrated capacitor element and integrated circuit outside, this integrated circuit are meant the bare chip that adopts integrated circuit technology to make.In one embodiment of the invention, capacitor element is metal-insulator-metal type (Metal-Insulator-Metal) electric capacity, i.e. MIM electric capacity.Dielectric S in the 101 expression CMOS integrated circuits
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2(silicon dioxide), second pole plate of 102 expression MIM electric capacity, first pole plate of 103 expression MIM electric capacity, first pole plate 103 of MIM electric capacity is connected with first electric conductor 104 in the integrated circuit by via hole 113, and first conductor 104 is exposed at the surfaces of integrated circuit outward.Second electric conductor of 105 expressions in the integrated circuits, two pole plates 102 of second electric conductor 105 and MIM electric capacity do not link to each other with 103.The passivation layer of 106 expression integrated circuit surface, the insulation-encapsulated of 107 expression integrated circuit outsides.Passivation layer 106 and encapsulation 107 constitute seal chamber in integrated circuit surface together, and seal chamber covers first electric conductor 104 and second electric conductor 105.The 3rd electric conductor in the 108 expression seal chambers, insulator, electric conductor 108 and insulator 109 objectionable interminglings in the 109 expression seal chambers.The 4th electric conductor in the 110 expression integrated circuits, the 4th electric conductor 110 links to each other by second pole plate 102 of via hole 112 and MIM electric capacity.The 5th electric conductor in the 111 expression integrated circuits, the 5th electric conductor 111 is connected with second electric conductor 105 by via hole 114.When this capacitive means and capacitance detection module, even other module such as whole attitude measurement system or circuit are when being integrated in the same chip, the 4th electric conductor 110 is used for linking to each other with this module or circuit with the 5th electric conductor 111, is the connecting line that capacitive means links to each other with this module or circuit.In one embodiment of the invention, first electric conductor 104 is realized by first conductive layer of the integrated circuit of capacitive means in the integrated circuit of capacitive means, is for example realized by the top layer metallic layer of CMOS integrated circuit technology; First pole plate 103 of MIM electric capacity is realized by second conductive layer of the integrated circuit of capacitive means, for example realizes that by the inferior top layer metallic layer of CMOS integrated circuit technology this time top layer metallic layer is the metal level that only is used for first pole plate of MIM electric capacity; Second pole plate 102 of MIM electric capacity is realized by the 3rd conductive layer of the integrated circuit of capacitive means, is for example realized by the top layer metallic layer once more of CMOS integrated circuit technology.
Fig. 2 is the profile of capacitive means of the horizontal positioned of another embodiment of the present invention.As shown in Figure 2, first pole plate of the MIM electric capacity in the integrated circuit of capacitive means be divided into two first pole plate parts 103 and 103 ', first electric conductor in the integrated circuit of capacitive means also correspondingly be divided into two first electric conductor parts 104 and 104 ', the first pole plate part 103 of electric capacity with 103 ' respectively by via hole 113 and 113 ' with the first electric conductor part 104 and 104 ' be connected.The seal chamber that forms between the surface of integrated circuit and insulation-encapsulated 107 covers the first electric conductor part 104 and 104 ' and second electric conductor 105.The remainder of capacitive means shown in Figure 2 is identical with capacitive means shown in Figure 1.In one embodiment of the invention, the first electric conductor part 104 and 104 in the integrated circuit of capacitive means ' realized by first conductive layer of the integrated circuit of capacitive means is for example realized by the top layer metallic layer of CMOS integrated circuit technology; The first pole plate part 103 and 103 of MIM electric capacity ' realize by second conductive layer of the integrated circuit of capacitive means, for example by inferior top layer metallic layer realization of CMOS integrated circuit technology, this time top layer metallic layer is the metal level that only is used for first pole plate of MIM electric capacity; Second pole plate 102 of MIM electric capacity is realized by the 3rd conductive layer of the integrated circuit of capacitive means, is for example realized by the top layer metallic layer once more of CMOS integrated circuit technology.
Fig. 3 is the profile of capacitive means of the horizontal positioned of further embodiment of this invention.As shown in Figure 3, the directly outer surfaces that are exposed at integrated circuit of first pole plate 103 of MIM electric capacity, the seal chamber that forms between the surface of integrated circuit and insulation-encapsulated 107 covers first pole plate 103 and second electric conductor 105 of MIM electric capacity.The remainder of capacitive means shown in Figure 3 is identical with capacitive means shown in Figure 1.In one embodiment of the invention, first conductive layer of the integrated circuit of first pole plate, 103 capacitive means of MIM electric capacity realizes that second pole plate 102 of MIM electric capacity is realized by second conductive layer of integrated circuit in the capacitive means.
Fig. 4 is the profile of capacitive means of the horizontal positioned of yet another embodiment of the invention.As shown in Figure 4, first pole plate of the MIM electric capacity in the integrated circuit of capacitive means be divided into two first pole plate parts 103 and 103 ', the first pole plate the part 103 and 103 ' directly outer surface that is exposed at integrated circuit, the seal chamber that forms between the surface of integrated circuit and insulation-encapsulated 107 cover the first pole plate part 103 and 103 of MIM electric capacity ' and second electric conductor 105.The remainder of capacitive means shown in Figure 4 is identical with capacitive means shown in Figure 1.In one embodiment of the invention, the first pole plate part 103 and 103 of MIM electric capacity ' realize by first conductive layer of the integrated circuit of capacitive means, second pole plate 102 of MIM electric capacity is realized by second conductive layer of the integrated circuit of capacitive means.
Fig. 5 is the vertical sectional side view of placing of capacitive means of one embodiment of the invention of Fig. 1.As shown in Figure 5, when the 3rd electric conductor 108 contacts with second electric conductor 105 with first electric conductor 104 simultaneously, the 3rd electric conductor 108 plays the interconnect function of lead, and at this moment first pole plate 103 of MIM electric capacity is connected with the 5th electric conductor 111 by first electric conductor 104, the 3rd electric conductor 108, second electric conductor 105; Second pole plate 102 of MIM electric capacity is connected with the 4th electric conductor 110.Capacitance between the 4th electric conductor 110 and the 5th electric conductor 111 is the capacitance of MIM electric capacity.When the 3rd electric conductor 108 did not touch first electric conductor 104 and second electric conductor 105 simultaneously, therefore open circuit between first pole plate 103 of MIM electric capacity and the 5th electric conductor 111 opened a way between the 4th electric conductor 110 and the 5th electric conductor 111, and capacitance is 0.Because comprise mutual exclusive the 3rd electric conductor 108 and insulator 109 in the seal chamber, when the attitude of capacitive means changed, under action of gravity, the 3rd electric conductor 108 was positioned at the top or the bottom of seal chamber.The contact relation of the 3rd electric conductor 108 and first electric conductor 104 and second electric conductor 105 is along with the attitude of capacitive means changes and changes, and the capacitance between the 4th electric conductor 110 and the 5th electric conductor 111 also changes thereupon.
Fig. 6 is the vertical orthogonal view of placing of the capacitive means that 8 capacitor elements are arranged of one embodiment of the invention.As shown in Figure 6, integrated 8 independently capacitor elements in same integrated circuit, first pole plate of 8 MIM electric capacity links to each other with 8 first electric conductors respectively, with 8 first electric conductors one by one to 8 second electric conductors should be arranged, second pole plate of 8 MIM electric capacity links to each other with 8 the 4th electric conductors respectively, and 8 second electric conductors link to each other with 8 the 5th electric conductors respectively.Represent 8 independently capacitor element and corresponding first electric conductor, second electric conductor, the 4th electric conductor and the 5th electric conductors with 11-18.Form a seal chamber between the encapsulation of the surface of the integrated circuit of capacitive means and integrated circuit, seal chamber covers 8 first electric conductors and 8 second electric conductors, and the 3rd electric conductor and insulator are arranged in seal chamber.Only express the passivation layer 106 and the 3rd electric conductor 108 of first electric conductor 104 that links to each other with first pole plate 103 of MIM electric capacity in the integrated circuit of capacitive means, second electric conductor 105, integrated circuit surface among the figure.Along with the variation of capacitive means position, the contact relation of the 3rd electric conductor 108 and 8 first electric conductors 104 and 8 second electric conductors 105 changes, and 8 capacitances of capacitive means output also change thereupon.When the 3rd electric conductor 108 contacts with second electric conductor 105 with first electric conductor 104 simultaneously, conducting between the 4th electric conductor and the 5th electric conductor, between the 4th electric conductor and the 5th electric conductor capacitance is arranged, when the 3rd electric conductor 108 does not contact with second electric conductor 105 with first electric conductor 104 simultaneously, open a way between the 4th electric conductor and the 5th electric conductor, capacitance is 0.Be in different attitudes according to capacitive means, the partition capacitance conducting in the capacitive means, not conducting of partition capacitance, thus according to the different attitudes of capacitive means, 8 capacitances of capacitive means output change along with the different attitudes of capacitive means.
In an embodiment of the present invention, the 3rd electric conductor 108 is conducting liquids, and insulator 109 is insulating gass, inert gas for example, and under action of gravity, conducting liquid 108 is positioned at the bottom of seal chamber all the time, and insulating gas 109 is positioned at the top of seal chamber all the time.In another embodiment of the present invention, the 3rd electric conductor 108 is conducting liquids, and insulator 109 is iknsulating liquids, and iknsulating liquid 109 is different with the proportion of conducting liquid 108.In another embodiment of the present invention, the 3rd electric conductor 108 is Powdered conductive solidss, and insulator 109 is insulating gass.
Fig. 7 is the profile of the resistance device of horizontal positioned in one embodiment of the invention.As shown in Figure 7, comprise in the resistance device: the encapsulation of integrated circuit and integrated circuit outside, this integrated circuit are meant the bare chip that adopts integrated circuit technology to make.Dielectric S in the 201 expression CMOS integrated circuits
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2The 6th electric conductor in the integrated circuit of 202 expression resistance devices, the 7th electric conductor in the integrated circuit of 203 expression resistance devices, the passivation layer of 204 expression integrated circuit surface, the insulation-encapsulated of 205 expression integrated circuit outsides, integrated circuit surface passivation layer 204 and encapsulation 205 constitute the seal chamber of integrated circuit surface together, the 8th electric conductor in the 206 expression seal chambers, the insulator in the 207 expression seal chambers.Via hole in the 210 and 211 expression integrated circuits.The 208th, the 9th electric conductor in the integrated circuit of resistance device, the 6th electric conductor 202 in the integrated circuit of resistance device is connected by via hole 210 with the 9th electric conductor 208.The 209th, the tenth electric conductor in the integrated circuit of resistance device, the 7th electric conductor 203 in the integrated circuit of resistance device is connected by via hole 211 with the tenth electric conductor 209.When this resistance device and resistance value detection module, even other module such as whole attitude measurement system or circuit are when being integrated in the same integrated circuit, the 9th electric conductor 208 is used for linking to each other with this module or circuit with the tenth electric conductor 209, is the connecting line that resistance device links to each other with this module or circuit.When the 8th electric conductor 206 simultaneously with the 6th electric conductor 202, when the 7th electric conductor 203 contacts, the 212nd, be connected the equivalent resistance of the 8th electric conductor 206 between the 6th electric conductor 202 and the 7th electric conductor 203.
Fig. 8 is the vertical sectional side view of placing of resistance device of one embodiment of the invention of Fig. 7.As shown in Figure 8, when the 6th electric conductor 202 in the integrated circuit of resistance device contacted with the 8th electric conductor 206 simultaneously with the 7th electric conductor 203, the equivalent resistance 212 that constitutes with the 8th electric conductor 206 was that resistance, the 6th electric conductor 202 and the 7th electric conductor 203 are the resistance of exit.When the 6th electric conductor 202 in the integrated circuit of resistance device does not contact with the 8th electric conductor 206 simultaneously with the 7th electric conductor 203, be equivalent to open circuit between the 6th electric conductor 202 and the 7th electric conductor 203, resistance value is infinitely great.Because comprise the 8th electric conductor 206 and insulator 207 in the seal chamber, when the attitude of resistance device changed, under action of gravity, the 8th electric conductor 206 was positioned at the top or the bottom of seal chamber.The 6th electric conductor 202 in the integrated circuit of the 8th electric conductor 206 and resistance device and the contact relation of the 7th electric conductor 203 change along with the variation of resistance device attitude, and the resistance value of the equivalent resistance 212 between the 6th electric conductor 202 and the 7th electric conductor 203 changes thereupon.Because the 9th electric conductor 208 is connected with the 6th electric conductor 202 by via hole 210, the tenth electric conductor 209 is connected with the 7th electric conductor 203 by via hole 211, and therefore the resistance value between the 9th electric conductor 208 and the tenth electric conductor 209 also changes thereupon.
Fig. 9 is the vertical orthogonal view of placing of the resistance device that 8 equivalent resistances are arranged of one embodiment of the invention.As shown in Figure 9, comprise 8 the 6th electric conductors and 8 the 7th electric conductors in same integrated circuit, 8 the 6th electric conductors are connected with 8 the 9th electric conductors respectively, and 8 the 7th electric conductors are connected with 8 the tenth electric conductors respectively.Represent 8 the 6th electric conductors, the 7th electric conductor, the 9th electric conductor and the tenth electric conductor with 21-28.Form a seal chamber between the encapsulation of the surface of the integrated circuit of resistance device and integrated circuit, seal chamber covers 8 the 6th electric conductors and 8 the 7th electric conductors, and the 8th electric conductor and insulator are arranged in seal chamber.Only express the 6th electric conductor 202, the 7th electric conductor 203, passivation layer 204 and the 8th electric conductor 206 in the integrated circuit of resistance device among the figure.When the 6th electric conductor 202 in the integrated circuit of resistance device contacted with the 8th electric conductor 206 simultaneously with the 7th electric conductor 203, the equivalent resistance that constitutes with the 8th electric conductor 206 was that resistance, the 6th electric conductor 202 and the 7th electric conductor 203 are the resistance of exit.When the 6th electric conductor 202 in the integrated circuit of resistance device does not contact with the 8th electric conductor 206 simultaneously with the 7th electric conductor 203, be equivalent to open circuit between the 6th electric conductor 202 and the 7th electric conductor 203, resistance value is infinitely great.Variation along with the resistance device position, the contact relation of the 8th electric conductor 206 and 8 the 6th electric conductors 202 and 8 the 7th electric conductors 203 changes, thereby according to the different attitudes of resistance device, 8 resistance values of resistance device output change along with the different attitudes of resistance device.
In an embodiment of the present invention, the 8th electric conductor 206 is conducting liquids, and insulator 207 is insulating gass, inert gas for example, and under action of gravity, conducting liquid 206 is positioned at the bottom of seal chamber all the time, and insulating gas 207 is positioned at the top of seal chamber all the time.In another embodiment of the present invention, the 8th electric conductor 206 is conducting liquids, and insulator 207 is iknsulating liquids, and iknsulating liquid 207 is different with the proportion of conducting liquid 206.In another embodiment of the present invention, the 8th electric conductor 206 is Powdered conductive solidss, and insulator 207 is insulating gass.
Figure 10 is the structured flowchart of the attitude measurement system of one embodiment of the invention.As shown in figure 10, this attitude measurement system comprises aforesaid capacitance/resistance device, capacitance/resistance value detection module and processing of capacitance/resistance value and output module, and capacitance/resistance value detection module is connected with output module with capacitance/resistance device and the processing of capacitance/resistance value.
One or more capacitance/resistance values in the capacitance/resistance device change with the attitude of attitude measurement system, thereby one or more capacitance/resistance values that the capacitance/resistance device is exported with the attitude variation of attitude measurement system change thereupon.
Capacitance/resistance value detection module is used to detect one or more capacitance/resistance values of capacitance/resistance device output.Can use the capacitance in capacitance-frequency (CF) detection method, capacitance-voltage (CV) detection method or other capacitance detection method measurement capacitive means.
The capacitance/resistance value is handled with output module and is obtained the capacitance/resistance Value Data from capacitance/resistance value detection module, provides the parameter of attitude measurement system after treatment.The capacitance/resistance value is handled with output module and is comprised capacitance/resistance value sampling module, data computation module, output module and control module.The capacitance/resistance Value Data that obtains from capacitance/resistance value detection module is input to capacitance/resistance value sampling module, is converted to numerical data through sampling and the capacitance/resistance value of simulation.Data computation module is connected with capacitance/resistance value sampling module, calculate the attitude parameter of attitude measurement system according to the numerical data of capacitance/resistance value sampling module output, for example, data computation module is according to the rotational angle that the numerical data after the sampling of capacitance/resistance value is calculated attitude measurement system; Data computation module calculates the angular speed of attitude measurement system according to the interior at interval rotational angle of certain hour; Data computation module calculates the angular acceleration of attitude measurement system according to the interior at interval angular speed of certain hour.Output module is connected with data computation module, and the attitude parameter that is used for data computation module is calculated is exported, and for example attitude parameter is the numerical value that expression attitudes such as angle, angular speed and/or angular acceleration change.Control module is connected with output module with capacitance/resistance value sampling module, data computation module, be used for capacitance/resistance value sampling module, data computation module and output module are controlled, control module is the core control section of whole capacitor/resistance value processing and output module.
In one embodiment of the invention, one or more the 4th electric conductors in the capacitive means link to each other at IC interior with the capacitance detection module with the 5th electric conductor, thereby capacitive means and capacitance detection module can be integrated in the same integrated circuit, further, can be integrated in capacitive means, capacitance detection module and capacitance processing in the same integrated circuit with output module.
In one embodiment of the invention, one or more the 9th electric conductors in the resistance device link to each other at IC interior with the resistance value detection module with the tenth electric conductor, thereby resistance device and resistance value detection module can be integrated in the same integrated circuit, further, can be integrated in resistance device, resistance value detection module and resistance value processing in the same integrated circuit with output module.
Figure 11 is the 3 d pose measuring principle of measurement system figure of one embodiment of the invention.As shown in figure 11, use three attitude measurement systems shown in Figure 10 to make up and finish the 3 d pose measurement.The 3 d pose measuring system comprises three attitude measurement systems shown in Figure 10 and a three dimensional signal treatment system.The plane at the top layer conductive layer place of the integrated circuit of the capacitance/resistance device of per two attitude measurement systems in three attitude measurement systems is vertical mutually.Three orthogonal attitude measurement systems, the attitude parameter of its output can be realized the 3 d pose measurement after handling through the three dimensional signal treatment system.In attitude measurement system, the attitude of capacitive means, determine first electric conductor in the integrated circuit of the 3rd electric conductor in its seal chamber and capacitive means and the annexation of second electric conductor, and then having determined the 4th electric conductor in the integrated circuit of capacitive means and the capacitance between the 5th electric conductor, the one or more capacitances that obtain according to the capacitive means from attitude measurement system can obtain the attitude parameter of attitude measurement system.In attitude measurement system, the attitude of resistance device, determine the 6th electric conductor in the integrated circuit of the 8th electric conductor in its seal chamber and resistance device and the annexation of the 7th electric conductor, and then having determined the 9th electric conductor in the integrated circuit of resistance device and the resistance value between the tenth electric conductor, the one or more resistance values that obtain according to the resistance device from attitude measurement system can obtain the attitude parameter of attitude measurement system.When three attitude measurement system combinations, the attitude parameter input three dimensional signal treatment system that obtains from each attitude measurement system is handled, just can realize the 3 d pose measurement.
The technology that adopts in the embodiments of the invention is the CMOS integrated circuit technology, also can adopt other integrated circuit technology; Capacitor element is MIM electric capacity among the embodiment, other class electric capacity that also can adopt integrated circuit technology to provide; Adopt capacitive means that 8 capacitor elements are arranged and the resistance device that 8 equivalent resistances are arranged among the embodiment, also can adopt the capacitive means and the resistance device that the varying number equivalent resistance is arranged of varying number capacitor element, can adopt difform electric capacity in addition.
Obviously, under the prerequisite that does not depart from true spirit of the present invention and scope, the present invention described here can have many variations.Therefore, the change that all it will be apparent to those skilled in the art that all should be included within the scope that these claims contain.
Claims (17)
1. a capacitive means based on integrated circuit technology, is characterized in that, comprising:
The integrated circuit of integrated one or more capacitor elements;
One or more first electric conductors are integrated on the described integrated circuit and are exposed at the surface of described integrated circuit outward, connect one to one with first pole plate of described one or more capacitor elements;
One or more second electric conductors are integrated on the described integrated circuit and are exposed at the surface of described integrated circuit outward;
Seal chamber is formed between the encapsulation of the surface of described integrated circuit and integrated circuit, covers described one or more first electric conductor and described one or more second electric conductor;
The 3rd electric conductor is positioned at described seal chamber, and the contact relation of described the 3rd electric conductor and described one or more first electric conductor and described one or more second electric conductors is along with the attitude of described capacitive means changes and changes;
Insulator is positioned at described seal chamber, with described the 3rd electric conductor objectionable intermingling.
2. capacitive means according to claim 1, it is characterized in that, first pole plate of described capacitor element is divided into a plurality of first pole plate parts, and described first electric conductor is divided into a plurality of first electric conductor parts accordingly, and described first electric conductor part partly connects with corresponding described first pole plate.
3. capacitive means according to claim 1, it is characterized in that, first pole plate of described one or more capacitor elements substitutes the directly outer surface that is exposed at described integrated circuit of described one or more first electric conductors, and described seal chamber covers first pole plate and described one or more second electric conductor of described one or more capacitor elements.
4. capacitive means according to claim 3 is characterized in that, first pole plate of described capacitor element is divided into a plurality of first pole plate parts.
5. capacitive means according to claim 1 is characterized in that, described the 3rd electric conductor is a conducting liquid, and described insulator is an insulating gas; Perhaps described the 3rd electric conductor is a conducting liquid, and described insulator is the iknsulating liquid with described conducting liquid different specific weight; Perhaps described the 3rd electric conductor is Powdered conductive solids, and described insulator is an insulating gas.
6. according to claim 1,2,3 or 4 described capacitive means, it is characterized in that, also comprise:
One or more the 4th electric conductors are integrated on the described integrated circuit, connect one to one with second pole plate of described one or more capacitor elements;
One or more the 5th electric conductors are integrated on the described integrated circuit, connect one to one with described one or more second electric conductors.
7. capacitive means according to claim 1 and 2, it is characterized in that, described first electric conductor is realized by first conductive layer of integrated circuit, first pole plate of described capacitor element is realized that by second conductive layer of integrated circuit second pole plate of described capacitor element is realized by the 3rd conductive layer of integrated circuit.
8. according to claim 3 or 4 described capacitive means, it is characterized in that first pole plate of described capacitor element is realized that by first conductive layer of integrated circuit second pole plate of described capacitor element is realized by second conductive layer of integrated circuit.
9. a resistance device based on integrated circuit technology, is characterized in that, comprising:
Integrated circuit;
One or more the 6th electric conductors are integrated on the described integrated circuit and are exposed at the surface of described integrated circuit outward;
One or more the 7th electric conductors are integrated on the described integrated circuit and are exposed at the surface of described integrated circuit outward;
Seal chamber is formed between the encapsulation of the surface of described integrated circuit and integrated circuit, covers described one or more the 6th electric conductor and one or more the 7th electric conductor;
The 8th electric conductor, be positioned at described seal chamber, described one or more the 6th electric conductors in the integrated circuit of described the 8th electric conductor and described resistance device and the contact relation of described one or more the 7th electric conductors change along with the variation of described resistance device attitude;
Insulator is positioned at described seal chamber, with described the 8th electric conductor objectionable intermingling.
10. resistance device according to claim 9 is characterized in that, described the 8th electric conductor is a conducting liquid, and described insulator is an insulating gas; Perhaps described the 8th electric conductor is a conducting liquid, and described insulator is the iknsulating liquid with described conducting liquid different specific weight; Perhaps described the 8th electric conductor is Powdered conductive solids, and described insulator is an insulating gas.
11. resistance device according to claim 9 is characterized in that, also comprises:
One or more the 9th electric conductors are integrated on the described integrated circuit, connect one to one with described one or more the 6th electric conductors;
One or more the tenth electric conductors are integrated on the described integrated circuit, connect one to one with described one or more the 7th electric conductors.
12. an attitude measurement system is characterized in that, comprising:
According to claim 1,2,3,4 or 6 described capacitive means/claims 9 or 11 described resistance devices;
Capacitance/resistance value detection module is connected with described capacitance/resistance device, is used to detect and export the capacitance/resistance value of described capacitance/resistance device;
The capacitance/resistance value is handled and output module, is connected with described capacitance/resistance value detection module, is used to handle described capacitance/resistance value and exports attitude parameter.
13. attitude measurement system according to claim 12 is characterized in that, described capacitance/resistance value is handled with output module and is comprised:
Capacitance/resistance value sampling module is used for described capacitance/resistance value sampling, and sampled value is converted to numerical data;
Data computation module is connected with described capacitance/resistance value sampling module, is used for calculating attitude parameter according to described numerical data;
Output module is connected with described data computation module, is used to export described attitude parameter;
Control module is connected with output module with described capacitance/resistance value sampling module, data computation module, is used to control described capacitance/resistance value sampling module, data computation module and output module.
14. attitude measurement system according to claim 12 is characterized in that, described capacitance/resistance device and capacitance/resistance value detection module are integrated in the same integrated circuit.
15. attitude measurement system according to claim 12 is characterized in that, described capacitance/resistance device, capacitance/resistance value detection module and capacitance/resistance value are handled with output module and are integrated in the same integrated circuit.
16. a multidimensional attitude measurement system is characterized in that, comprising:
A plurality of attitude measurement systems according to claim 12 are used to carry out attitude measurement, export a plurality of attitude parameters;
The multidimensional signal treatment system is connected with described a plurality of attitude measurement systems, is used for that described a plurality of attitude parameters are carried out multidimensional signal and handles, and realizes the multidimensional attitude measurement.
17. multidimensional attitude measurement system according to claim 16 is characterized in that, comprises three described attitude measurement systems, the top layer conductive layer of the integrated circuit of the capacitance/resistance device of per two described attitude measurement systems is vertical mutually.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2009100829038A CN101533840B (en) | 2009-04-24 | 2009-04-24 | Capacitor device, resistor device and attitude measurement system using same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100829038A CN101533840B (en) | 2009-04-24 | 2009-04-24 | Capacitor device, resistor device and attitude measurement system using same |
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| Publication Number | Publication Date |
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| CN101533840A CN101533840A (en) | 2009-09-16 |
| CN101533840B true CN101533840B (en) | 2011-01-12 |
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