CN101533774A - Method for enhancing mechanical strength of SiCOH film with low dielectric constant - Google Patents
Method for enhancing mechanical strength of SiCOH film with low dielectric constant Download PDFInfo
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- CN101533774A CN101533774A CN200810034606A CN200810034606A CN101533774A CN 101533774 A CN101533774 A CN 101533774A CN 200810034606 A CN200810034606 A CN 200810034606A CN 200810034606 A CN200810034606 A CN 200810034606A CN 101533774 A CN101533774 A CN 101533774A
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- sicoh film
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Abstract
A method for enhancing mechanical strength of a SiCOH film with low dielectric constant aims at overcoming the defect that the SiCOH film with low dielectric constant in the existing integrated circuit interconnection has lower dielectric constant, while the mechanical strength thereof is poor. The method adopted by the invention comprises the following steps of: adopting ultraviolet ray to irradiate the SiCOH film with low dielectric constant at room temperature for above 50 hours and with the wave length of the ultraviolet ray being 2537; the mechanical property of the SiCOH film with low dielectric constant can be distinctly enhanced after the irradiation by ultraviolet ray; and the electrical property of the SiCOH film can be still preserved.
Description
Technical field
The present invention relates to the method for the mechanical strength of a kind of raising low-k carbon doped silicon oxide (SiCOH) dielectric film.
Background technology
Development along with very lagre scale integrated circuit (VLSIC) (ULSI), the characteristic size of device is constantly dwindled, and interconnection capacitance and resistance increase rapidly, thereby has limited the raising of device performance, in order to reduce interconnect delay, need to adopt the material of low-k (dielectric constant) to replace traditional SiO
2Dielectric material as interconnection.The silicon oxide film of carbon dope (SiCOH) is because it is easy to preparation, lower dielectric constant values, and good characteristics such as processing compatibility become the optimal selection of the connected medium of 90 nanometers and following technology node integrated circuit technique.Yet, introducing-CH
3Group has reduced the density of film, when reducing dielectric constant, also makes the obvious variation of mechanical performance of dielectric film: along with Si-CH
3The increase of key, density reduces, and the Young's modulus and the hardness of film all reduce rapidly, make dielectric film all run into very big problem in particularly leveling of follow-up technology (CMP) technology.Be necessary very much to adopt a kind of method that improves mechanical strength of SiCOH film with low dielectric constant in this case, can on the basis of original technology, improve the performance of SiCOH film effectively.
Summary of the invention
The mechanical strength that the purpose of this invention is to provide a kind of raising low-k carbon doped silicon oxide (SiCOH) dielectric film, do not change the method for the original performance characteristics of SiCOH film of low-k, this SiCOH film is used for the manufacturing process of integrated circuit.
The present invention proposes a kind of by the SiCOH film is carried out ultraviolet irradiation, thereby improve the method for the mechanical strength of film.
The present invention improves the mechanical strength of SiCOH film by the processing of the SiCOH film being carried out ultraviolet irradiation.The ultraviolet wavelength of the irradiation that the present invention adopts is 2537
, irradiation time is a room temperature condition more than 50 hours, by UV-irradiation, the mechanical performance of film (Young's modulus and hardness) has all improved more than 80%.
The method of utilizing UV-irradiation to improve the mechanical performance of SiCOH film among the present invention has the following advantages: (1) does not change the original character of film, comprises dielectric constant values, leakage current density, electrical stability energy.(2) obviously improve the mechanical strength of film, avoid in postchannel process, producing situations such as inefficacy.(3) utilize UV-irradiation with low cost, be beneficial to realization, therefore help the popularization of suitability for industrialized production.
Description of drawings
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, below in conjunction with accompanying drawing the specific embodiment of the present invention is elaborated, wherein:
Fig. 1 is exemplary according to an embodiment of the invention schematic diagram.
Embodiment
To carry out concrete description for embodiment hereinafter:
Fig. 1 is an illustrative diagram according to an embodiment of the invention, low-k SiCOH film 101 is deposited on the silicon chip substrate 102 by the method for PECVD, low-k SiCOH film 101 thickness are about 500 nanometers, dielectric constant values is 2.75, the UV-irradiation that this SiCOH film 101 is carried out under the room temperature condition, irradiation time is 53 hours, and ultraviolet wavelength is 2537
The Young's modulus of MEASUREMENTS OF THIN and the nano-hardness tester of hardness are selected MTS Nano Indenter for use
The dynamic contact modules of ultrahigh resolution nanometer (Nano DCM) assembly of system, after pre-irradiation and irradiation, measure the Young's modulus and the hardness of low-k SiCOH film 101 respectively, the Young's modulus of pre-irradiation SiCOH film 101 is 7.22Gpa, and the Young's modulus of irradiation back SiCOH film 101 is 13.06Gpa; The hardness of pre-irradiation SiCOH film 101 is 0.851Gpa, and the hardness of irradiation back SiCOH film 101 is 1.533Gpa, and behind the pre-irradiation, the Young's modulus and the hardness of low-k SiCOH film 101 have improved 80.89% and 80.14% respectively.And utilize the dielectric constant values of low-k SiCOH dielectric film 101 behind the structure measurement pre-irradiation of metal-dielectric-semiconductor (MIS), pre-irradiation dielectric constant values is that 2.75 to shine the back dielectric constant values be 2.66, and very small variation is only arranged.
Though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little modification and perfect, so protection scope of the present invention is when with being as the criterion that claims were defined.
Claims (6)
1. a method that improves mechanical strength of SiCOH film with low dielectric constant is characterized in that: utilize ultraviolet light that low-k SiCOH dielectric film is carried out the irradiation of certain hour, improve the mechanical strength of film.
2. method according to claim 1 is characterized in that: the temperature during ultraviolet irradiation is a room temperature.
3. method according to claim 1 is characterized in that: the time of ultraviolet irradiation was greater than 50 hours.
4. method according to claim 1 is characterized in that: the ultraviolet wavelength of irradiation is 2537
5. method according to claim 1 is characterized in that: be used for the integrated circuit isolation dielectric film by the SiCOH film after the ultraviolet irradiation.
6. require 1 described method according to the cane profit, it is characterized in that: the process of ultraviolet irradiation can not reduce the electric property of low dielectric constant SiCOH dielectric film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810034606A CN101533774A (en) | 2008-03-14 | 2008-03-14 | Method for enhancing mechanical strength of SiCOH film with low dielectric constant |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810034606A CN101533774A (en) | 2008-03-14 | 2008-03-14 | Method for enhancing mechanical strength of SiCOH film with low dielectric constant |
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| Publication Number | Publication Date |
|---|---|
| CN101533774A true CN101533774A (en) | 2009-09-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN200810034606A Pending CN101533774A (en) | 2008-03-14 | 2008-03-14 | Method for enhancing mechanical strength of SiCOH film with low dielectric constant |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386128A (en) * | 2011-07-25 | 2012-03-21 | 复旦大学 | Method for modifying SiCOH film microstructure |
| CN102683275A (en) * | 2012-06-08 | 2012-09-19 | 复旦大学 | Super-low dielectric constant (k) material thin film and preparation method thereof |
| CN105448646A (en) * | 2014-07-08 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Method for improving mechanical strength of porous low-k film |
-
2008
- 2008-03-14 CN CN200810034606A patent/CN101533774A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386128A (en) * | 2011-07-25 | 2012-03-21 | 复旦大学 | Method for modifying SiCOH film microstructure |
| CN102683275A (en) * | 2012-06-08 | 2012-09-19 | 复旦大学 | Super-low dielectric constant (k) material thin film and preparation method thereof |
| CN105448646A (en) * | 2014-07-08 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | Method for improving mechanical strength of porous low-k film |
| CN105448646B (en) * | 2014-07-08 | 2018-12-11 | 中芯国际集成电路制造(上海)有限公司 | Improve the method for the mechanical strength of porous low k film |
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Addressee: Zhang Lei Document name: Notification of Publication of the Application for Invention |
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Open date: 20090916 |