Summary of the invention
The purpose of this invention is to provide a kind of dielectric material of glass-ceramics with high energy storage density and preparation method thereof.
A kind of dielectric material of glass-ceramics with high energy storage density is characterized in that, the main ingredient of dielectric material of glass-ceramics is BaO, SrO, TiO
2, SiO
2And Al
2O
3, it forms doped with Al F
3And MnO
2, the main ingredient mol ratio is BaO:SrO:TiO
2: SiO
2: Al
2O
3=(0.28~0.35): (0.05~0.10): (0.27~0.35): (0.20~0.25): (0.04~0.11), doped with Al F
3Mole number account for 2~8% of component total mole number, doped with Mn O
2Mole number account for 0.1~1% of component total mole number.
A kind of preparation method of dielectric material of glass-ceramics with high energy storage density is characterized in that, this method steps is as follows,
(1) with purity greater than 99% BaCO
3, SrCO
3, TiO
2, SiO
2, Al
2O
3, AlF
3And MnO
2Be starting raw material, according to main ingredient BaO, SrO, TiO
2, SiO
2And Al
2O
3Mol ratio is BaO:SrO:TiO
2: SiO
2: Al
2O
3=(0.28~0.35): (0.05~0.10): (0.27~0.35): (0.20~0.25): (0.04~0.11), doped with Al F
3Mole number account for 2~8% of component total mole number, doped with Mn O
2Mole number account for 0.1~1% of component total mole number, prepare burden, then these raw materials are added ball-milling medium and ground 4~6 hours in planetary ball mills, the calcining of oven dry back, calcining temperature is 1400~1650 ℃, is incubated 2~6 hours high-temperature fusion;
(2) high-temperature fusant with step (1) is poured in the metal die, and obtaining thickness through cutting then is the glass flake of 0.2~1mm; Perhaps, the high-temperature fusant of step (1) is prepared the glass flake that thickness is 0.1~1mm through cold-rolling process; Perhaps, the high-temperature fusant of step (1) is carried out quick shrend, the glass particle that shrend is obtained adds ball-milling medium grinding 10~20 hours in planetary ball mill again, and air atmosphere is oven dry down, obtains the thin slice that thickness is 0.5~2mm through compression moulding then;
(3) glass flake with step (2) preparation carries out controlled crystallization, this crystallization process was divided into for two steps, at first impelled the principal crystalline phase nucleation in 1~2 hour 750~850 ℃ of temperature insulations, principal crystalline phase is a strontium-barium titanate, be incubated 1~3 hour then under 800~1100 ℃ of temperature and make nuclei growth, obtaining with the strontium-barium titanate with perovskite structure is the ferroelectric glass-ceramic dielectric of principal crystalline phase;
(4) the resulting glass-ceramic dielectric thin slice of step (3) is applied adhesive property and the good silver paste of conductivity through silk-screen printing technique, solidify to form the argent electrode at 500~550 ℃ of sintering temperatures, make the glass-ceramics with high energy storage density dielectric medium.
Described ball-milling medium is deionized water or dehydrated alcohol.
Described metal die material is steel or copper, and mould is circle or rectangle.
Beneficial effect of the present invention is: the present invention utilizes fluorochemical to reduce glass viscosity and manganese significantly and easily appraises at the current rate and stop 4 valency titaniums to be reduced into the characteristic of 3 valency titaniums, is doping agent with an amount of aluminum fluoride and Manganse Dioxide respectively, and preparation is based on BaO-SrO-TiO
2-SiO
2-Al
2O
3The microcrystal glass material of system.By being added in the heat of crystallization treating processes of aluminum fluoride, reduce glass viscosity, thereby elemental diffusion speed is accelerated greatly when heat of crystallization is handled, and effectively suppresses and stop the formation of dendritic strontium-barium titanate crystallite.Simultaneously, the introducing of Manganse Dioxide is played and is reduced dielectric loss significantly, improve the effectiveness of insulation resistance, under the comprehensive action of above-mentioned two kinds of doping agents, the densification of ferroelectric glass-ceramic dielectric structures, crystal grain trickle (less than 500nm) that the present invention is prepared, dielectric loss is compared the low order of magnitude of unadulterated sample, and anti-electrical property improves greatly.The dielectric material breaking down field strength (direct current) of gained surpasses 60kV/mm.The present invention can be used for the manufacturing of various high energy storage density high voltage capacitors.
Embodiment
The invention will be further described below in conjunction with accompanying drawing:
Comparative example 1
A kind of dielectric material of glass-ceramics, the component of dielectric material of glass-ceramics are BaO, SrO, TiO
2, SiO
2And Al
2O
3, it forms not doped with Al F
3And MnO
2, the component mol ratio is BaO:SrO:TiO
2: SiO
2: Al
2O
3=0.2936:0.0734:0.305:0.212:0.086.
A kind of preparation method of dielectric material of glass-ceramics is as follows,
(1) with purity greater than 99% BaCO
3, SrCO
3, TiO
2, SiO
2And Al
2O
3Being starting raw material, is BaO:SrO:TiO according to the component mol ratio of dielectric material of glass-ceramics
2: SiO
2: Al
2O
3=0.2936:0.0734:0.305:0.212:0.086 batching adds these raw materials the ball-milling medium dehydrated alcohol then and ground 6 hours in planetary ball mill, oven dry back high-temperature fusion, and melt temperature is 1550 ℃, is incubated 6 hours;
(2) high-temperature fusant with step (1) is poured in the metal die (the metal die material is a copper, and mould is circular), and obtaining thickness through cutting then is the glass flake of 1mm;
(3) glass flake with step (2) preparation carries out controlled crystallization, this crystallization process was divided into for two steps, at first impelled the principal crystalline phase nucleation in 2 hours 750 ℃ of temperature insulations, principal crystalline phase is a strontium-barium titanate, insulation made nuclei growth in 2 hours under 1100 ℃ of temperature then, and obtaining with the strontium-barium titanate with perovskite structure is the ferroelectric glass-ceramic dielectric of principal crystalline phase;
(4) the resulting glass-ceramic dielectric thin slice of step (3) is applied adhesive property and the good silver paste of conductivity through silk-screen printing technique, solidify to form the argent electrode, make glass-ceramic dielectric at 500 ℃ of sintering temperatures.
The SEM photo of the glass-ceramic dielectric of this comparative example preparation as shown in Figure 1, therefrom the sample microtexture presents typical dendritic brilliant feature as can be seen.
Comparative example 2
A kind of dielectric material of glass-ceramics, the main ingredient of dielectric material of glass-ceramics are BaO, SrO, TiO
2, SiO
2And Al
2O
3, it forms doped with Al F
3, the main ingredient mol ratio is BaO:SrO:TiO
2: SiO
2: Al
2O
3=0.2936:0.0734:0.305:0.212:0.086, doped with Al F
3Mole number account for 4% of component total mole number.
A kind of preparation method of dielectric material of glass-ceramics is as follows,
(1) with purity greater than 99% BaCO
3, SrCO
3, TiO
2, SiO
2, Al
2O
3And AlF
3Be starting raw material, according to main ingredient BaO, SrO, TiO
2, SiO
2And Al
2O
3Mol ratio is BaO:SrO:TiO
2: SiO
2: Al
2O
3=0.2936:0.0734:0.305:0.212:0.086, doped with Al F
3Mole number account for 4% batching of component total mole number, then these raw materials are added the ball-milling medium dehydrated alcohol and ground 6 hours in planetary ball mills, oven dry is high-temperature fusion afterwards, melt temperature is 1550 ℃, is incubated 6 hours;
(2) high-temperature fusant with step (1) is poured in the metal die (the metal die material is a copper, and mould is circular), and obtaining thickness through cutting then is the glass flake of 1mm;
(3) glass flake with step (2) preparation carries out controlled crystallization, this crystallization process was divided into for two steps, at first impelled the principal crystalline phase nucleation in 2 hours 750 ℃ of temperature insulations, principal crystalline phase is a strontium-barium titanate, insulation made nuclei growth in 2 hours under 1100 ℃ of temperature then, and obtaining with the strontium-barium titanate with perovskite structure is the ferroelectric glass-ceramic dielectric of principal crystalline phase;
(4) the resulting glass-ceramic dielectric thin slice of step (3) is applied adhesive property and the good silver paste of conductivity through silk-screen printing technique, solidify to form the argent electrode, make glass-ceramic dielectric at 500 ℃ of sintering temperatures.
Embodiment 1
A kind of dielectric material of glass-ceramics with high energy storage density, the main ingredient of dielectric material of glass-ceramics are BaO, SrO, TiO
2, SiO
2And Al
2O
3, it forms doped with Al F
3And MnO
2, the main ingredient mol ratio is BaO:SrO:TiO
2: SiO
2: Al
2O
3=0.2936:0.0734:0.305:0.212:0.086, doped with Al F
3Mole number account for 4% of component (described component is made up of main ingredient and doping component) total mole number, doped with Mn O
2Mole number account for 1% of component (described component is made up of main ingredient and doping component) total mole number.
A kind of preparation method of dielectric material of glass-ceramics with high energy storage density is as follows,
(1) with purity greater than 99% BaCO
3, SrCO
3, TiO
2, SiO
2, Al
2O
3, AlF
3And MnO
2Be starting raw material, according to main ingredient BaO, SrO, TiO
2, SiO
2And Al
2O
3Mol ratio is BaO:SrO:TiO
2: SiO
2: Al
2O
3=0.2936:0.0734:0.305:0.212:0.086, doped with Al F
3Mole number account for 4% of component total mole number, doped with Mn O
2Mole number account for 1% of component total mole number, prepare burden, then these raw materials are added the ball-milling medium dehydrated alcohol and ground 6 hours in planetary ball mills, the calcining of oven dry back, calcining temperature is 1550 ℃, is incubated 6 hours high-temperature fusion;
(2) high-temperature fusant with step (1) is poured in the metal die (the metal die material is a copper, and mould is circular), and obtaining thickness through cutting then is the glass flake of 1mm;
(3) glass flake with step (2) preparation carries out controlled crystallization, this crystallization process was divided into for two steps, at first impelled the principal crystalline phase nucleation in 2 hours 750 ℃ of temperature insulations, principal crystalline phase is a strontium-barium titanate, insulation made nuclei growth in 2 hours under 1100 ℃ of temperature then, and obtaining with the strontium-barium titanate with perovskite structure is the ferroelectric glass-ceramic dielectric of principal crystalline phase;
(4) the resulting glass-ceramic dielectric thin slice of step (3) is applied adhesive property and the good silver paste of conductivity through silk-screen printing technique, solidify to form the argent electrode, make the glass-ceramics with high energy storage density dielectric medium at 500 ℃ of sintering temperatures.
Other conditions are constant, change doped with Mn O
2Molecular fraction, doped with Mn O
2Mole number account for 0.1%, 0.2% and 0.5% of component total mole number respectively, obtain doped with Mn O
2Mole number account for 0.1%, 0.2%, 0.5% o'clock glass-ceramics with high energy storage density dielectric medium of component total mole number respectively.
Step (3) gained ferroelectric glass-ceramic dielectric material phase analysis and microtexture as shown in Figures 2 and 3, Fig. 2 is glass-ceramic dielectric (doped with Mn O
2Mole number account for the component total mole number 1%) XRD figure spectrum after heat of crystallization is handled, therefrom the principal crystalline phase of this microcrystal glass material is a strontium-barium titanate as can be seen, other has a spot of BaAl
2Si
2O
8Fig. 3 is glass-ceramic dielectric (doped with Mn O
2Mole number account for the component total mole number 1%) the SEM photo, therefrom ferroelectric as can be seen crystallite size is even.
Doped with Mn O
2Mole number account for the component total mole number respectively 0.1%, 0.2%, 0.5%, 1% o'clock the dielectric relative permittivity of glass-ceramics with high energy storage density, dielectric loss, insulation resistivity as shown in Figure 4, test condition: specific inductivity and dielectric loss are that frequency 1kHz measures down; Insulation resistivity is measured down for the 100V direct current, and probe temperature is room temperature.The result shows: along with the increase of manganese dioxide doped amount, the sample insulation resistivity significantly improves, and dielectric loss descends, and relative permittivity decreases simultaneously.
Fig. 5 is comparative example 1 and 2, embodiment 1 (doped with Mn O
2Mole number account for the component total mole number 1%) in the weibull of the dielectric disruptive strength of glass-ceramics with high energy storage density distribute.Disruptive strength is being that medium is measured with the transformer oil, and probe temperature is a room temperature.As can be seen from the figure the disruptive strength of the glass-ceramic dielectric of embodiment 1 preparation is significantly higher than the disruptive strength of the glass-ceramic dielectric of comparative example 1 and 2 preparations.
Embodiment 2
A kind of dielectric material of glass-ceramics with high energy storage density, the main ingredient of dielectric material of glass-ceramics are BaO, SrO, TiO
2, SiO
2And Al
2O
3, it forms doped with Al F
3And MnO
2, the main ingredient mol ratio is BaO:SrO:TiO
2: SiO
2: Al
2O
3=0.2800:0.0820:0.3150:0.2200:0.1060, doped with Al F
3Mole number account for 6% of component total mole number, doped with Mn O
2Mole number account for 0.4% of component total mole number.
A kind of preparation method of dielectric material of glass-ceramics with high energy storage density is as follows,
(1) with purity greater than 99% BaCO
3, SrCO
3, TiO
2, SiO
2, Al
2O
3, AlF
3And MnO
2Be starting raw material, according to main ingredient BaO, SrO, TiO
2, SiO
2And Al
2O
3Mol ratio is BaO:SrO:TiO
2: SiO
2: Al
2O
3=0.2800:0.0820:0.3150:0.2200:0.1060, doped with Al F
3Mole number account for 6% of component total mole number, doped with Mn O
2Mole number account for 0.4% of component total mole number, prepare burden, then these raw materials are added the ball-milling medium dehydrated alcohol and ground 5 hours in planetary ball mills, the calcining of oven dry back, calcining temperature is 1600 ℃, is incubated 5.5 hours high-temperature fusion;
(2) high-temperature fusant of step (1) is prepared the glass flake that thickness is 1mm through cold-rolling process;
(3) glass flake with step (2) preparation carries out controlled crystallization, this crystallization process was divided into for two steps, at first impelled the principal crystalline phase nucleation in 1.5 hours 800 ℃ of temperature insulations, principal crystalline phase is a strontium-barium titanate, insulation made nuclei growth in 3 hours under 1050 ℃ of temperature then, and obtaining with the strontium-barium titanate with perovskite structure is the ferroelectric glass-ceramic dielectric of principal crystalline phase;
(4) the resulting glass-ceramic dielectric thin slice of step (3) is applied adhesive property and the good silver paste of conductivity through silk-screen printing technique, solidify to form the argent electrode, make the glass-ceramics with high energy storage density dielectric medium at 550 ℃ of sintering temperatures.
The dielectric relative permittivity of the glass-ceramics with high energy storage density that present embodiment obtains, dielectric loss, insulation resistivity are close with embodiment 1 gained sample result.Test condition: specific inductivity and dielectric loss are measured down for frequency 1kHz; Insulation resistivity is measured down for the 100V direct current, and probe temperature is room temperature.
Embodiment 3
A kind of dielectric material of glass-ceramics with high energy storage density, the main ingredient of dielectric material of glass-ceramics are BaO, SrO, TiO
2, SiO
2And Al
2O
3, it forms doped with Al F
3And MnO
2, the main ingredient mol ratio is BaO:SrO:TiO
2: SiO
2: Al
2O
3=0.3301:0.0522:0.3150:0.2300:0.0800, doped with Al F
3Mole number account for 7% of component total mole number, doped with Mn O
2Mole number account for 0.6% of component total mole number.
A kind of preparation method of dielectric material of glass-ceramics with high energy storage density is as follows,
(1) with purity greater than 99% BaCO
3, SrCO
3, TiO
2, SiO
2, Al
2O
3, AlF
3And MnO
2Be starting raw material, according to main ingredient BaO, SrO, TiO
2, SiO
2And Al
2O
3Mol ratio is BaO:SrO:TiO
2: SiO
2: Al
2O
3=0.3301:0.0522:0.3150:0.2300:0.0800, doped with Al F
3Mole number account for 7% of component total mole number, doped with Mn O
2Mole number account for 0.6% of component total mole number, prepare burden, then these raw materials are added the ball-milling medium dehydrated alcohol and ground 5 hours in planetary ball mills, the calcining of oven dry back, calcining temperature is 1500 ℃, is incubated 5 hours high-temperature fusion;
(2) high-temperature fusant with step (1) carries out quick shrend, and the glass particle that shrend is obtained adds ball-milling medium dehydrated alcohol grinding 20 hours in planetary ball mill again, and air atmosphere is oven dry down, obtains the thin slice that thickness is 1mm through compression moulding then;
(3) glass flake with step (2) preparation carries out controlled crystallization, this crystallization process was divided into for two steps, at first impelled the principal crystalline phase nucleation in 1 hour 760 ℃ of temperature insulations, principal crystalline phase is a strontium-barium titanate, insulation made nuclei growth in 3 hours under 1050 ℃ of temperature then, and obtaining with the barium titanate with perovskite structure is the ferroelectric glass-ceramic dielectric of principal crystalline phase;
(4) the resulting glass-ceramic dielectric thin slice of step (3) is applied adhesive property and the good silver paste of conductivity through silk-screen printing technique, solidify to form the argent electrode, make the glass-ceramics with high energy storage density dielectric medium at 530 ℃ of sintering temperatures.
The dielectric relative permittivity of the glass-ceramics with high energy storage density that present embodiment obtains, dielectric loss, insulation resistivity are close with embodiment 1 gained sample result.Test condition: specific inductivity and dielectric loss are measured down for frequency 1kHz; Insulation resistivity is measured down for the 100V direct current, and probe temperature is room temperature.