CN101529561A - Quartz guard ring - Google Patents

Abstract

An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper electrode, a backing member attachable to an upper surface of the upper electrode, and an outer ring. The outer ring surrounds an outer surface of the backing member and is located above the upper surface of the upper electrode.

Description

Quartz guard ring

The cross reference of related application

[0001] the application requires to submit in the United States Patent (USP) provisional application No.60/852 on October 16th, 2006,345 priority, and its integral body is combined in here by reference.

Summary of the invention

[0002] according to an embodiment, a kind of plasma reaction chamber electrode assemblies that is used for semiconductor chip processing use comprises: upper electrode; Backing member, this backing member can be attached at the upper surface of this upper electrode; And outer shroud, around the outer surface of this backing member and be positioned on the upper surface of this upper electrode.

[0003] according to further embodiment; a kind of guard ring that is used for the electrode assemblies of the plasma reaction chamber that semiconductor chip handle to use; wherein this electrode assemblies comprises showerhead electrode that is bonded to backing member and the limit collar assembly that centers on this electrode assemblies; this guard ring comprises: guard ring; be configured to be installed between the inner edge of the outer rim of this backing member and this limit collar assembly, this guard ring has the lower surface of the upper surface that is suitable for covering this upper electrode.

[0004] according to another embodiment, a kind of method of in plasma chamber, handling semiconductor chip, this plasma chamber comprises: the electrode assemblies with upper electrode; Backing member, this backing member can be attached at the upper surface of this upper electrode; And outer shroud, around the outer surface of this backing member and be positioned on the upper surface of this upper electrode, wherein this method comprises: in this plasma chamber semiconductor chip is supported on the lower electrode, this lower electrode is separated by gap and this upper electrode; Process gas is provided into this gap and this process gas is actuated to plasma; And utilize this semiconductor chip of this plasma treatment.

Description of drawings

[0005] Fig. 1 illustrates the cutaway view of the showerhead electrode assembly with guard ring of the plasma reactor that is used for etch substrate.

[0006] Fig. 2 illustrates the cutaway view of a part of this showerhead electrode assembly of Fig. 1.

[0007] Fig. 3 this showerhead electrode assembly that Fig. 2 is shown comprises the cutaway view of the part of upper electrode, backing member and this guard ring.

[0008] Fig. 4 illustrates the vertical view of this guard ring.

[0009] Fig. 5 illustrates the cutaway view of the guard ring 5-5 along the line of Fig. 4.

[0010] Fig. 6 illustrates according to an embodiment, the cutaway view of this guard ring.

[0011] Fig. 7 illustrates the cutaway view that has the part of this upper electrode of guard ring and backing member according to an embodiment.

[0012] Fig. 8 illustrates according to another embodiment, the cutaway view of this guard ring.

[0013] Fig. 9 illustrates according to further embodiment, has the cutaway view of the part of this upper electrode of guard ring and backing member.

Embodiment

[0014] manufacturing of integrated circuit (IC) chip starts from thin, the polishing section of high-purity, single-crystal semiconductor material (as silicon or germanium) substrate (being called " wafer ") usually.Each wafer is through a series of physics and chemical treatment step, and these steps form various circuit structures on this wafer.During manufacture process, various types of films can use multiple technologies to be deposited on this wafer, producing silicon dioxide film, chemical vapour deposition (CVD) to be producing silicon, silicon dioxide and silicon oxynitride film as thermal oxidation, and sputter or other technologies are to produce other metal films.

[0015] on semiconductor wafer after the deposited film, the technology that is called doping by use produces unique semiconductor electrical equipment attribute with this semiconductor lattice of impurity substitution of choosing.The silicon wafer of this doping is coated with the photosensitive or radiation-sensitive material layer of last layer then equably, is called " resist ".The little geometrical pattern that limits electron path in the circuit uses the technology that is called photoetching to be delivered on this resist then.During photoetching process, this integrated circuit patterns can be painted on the glass plate, and it is called " mask ", then optics dwindle, projection and being delivered on the photosensitive coating.

[0016] by being called etched technology this photoresists pattern is delivered on the following semi-conducting material crystal surface then.Vacuum processing chamber be generally used for etch substrate and on substrate chemical vapor deposition (CVD), by providing etching or deposition gases to this vacuum chamber and to apply radio frequency (RF) to this gas be plasma state so that this gas is excited.

[0017] the reactive ion etching system is made up of etching chamber usually, wherein is provided with top electrode or anode and bottom electrode or negative electrode.This negative electrode is with respect to this anode and this chamber wall negative bias.Treat that etched wafer is covered by suitable mask and is directly arranged on this negative electrode.Chemical reaction gas such as CF ₄, CHF ₃, CClF ₃, HBr, Cl ₂And SF ₆Or itself and O ₂, N ₂, He or Ar mixture introduce this etching chamber and remain on the pressure that is generally the millitorr scope.This top electrode provides pore, and it allows gas to disperse to enter this chamber by this electrode equably.The electric field that is based upon between this anode and this negative electrode will separate the isoionic reactant gas of formation.This wafer surface is subjected to etching by shifting with the chemical reaction of this reactive ion and the momentum that clashes into the ion of this wafer surface.The electric field that is produced by these electrodes attracts these examples to this negative electrode, make these ions clash into this surface with main vertical direction, thereby this technology produces the sidewall of the vertical etching of sharp outline.Often by two dissimilar member utilizations are mechanically adapted and/or the heat conduction adhesive bond is made together, this is to make allowances for multi-functional to these etch reactor electrodes.

[0018] Fig. 1 illustrates the cutaway view of a part of the showerhead electrode assembly 100 of the plasma handling system that is used for etch substrate.As shown in Figure 1, this showerhead electrode assembly 100 comprises top electrode 110, backing member 140 and guard ring (or outer shroud) 170.This showerhead electrode assembly 100 also comprises plasma restriction assembly (or wafer area plasma (WAP) assembly) 180, and it is around the external margin of this top electrode 110 and this backing member 140.This guard ring 170 is around this backing member 140; and preferably suitable for being provided with around this backing member 140 or being the center with this backing member; thereby during the plasma handling system thermal cycle, this guard ring 170 minimizes the variation of radial clearance 200 between this guard ring 170 and this restriction assembly 180.Illustrate although can recognize this outer shroud or guard ring 170 binding reactive ion(ic) etching systems, this guard ring and the structure that centers can be used for any suitable system, comprise clean etch system or dry ecthing system.

[0019] this assembly 100 also comprises thermal control member 102 and upper plate 104.This top electrode 110 preferably includes internal electrode 120 and optional outer electrode 130.This internal electrode 120 is preferably cylindrical plate and can be made up of monocrystalline silicon.This backing member 140 utilizes elastomeric material to be fixed in this internal electrode 120 and this outer electrode 130.This backing member 140 can comprise inner backing member 150 and optional outside backing member 160.If this backing member 140 is made up of single cylindrical plate, this guard ring 170 is around this backing member 140.Perhaps, if this backing member 140 is made up of inside and outside backing member 150,160, this guard ring 170 is adjusted into around this outside backing member 160.

[0020] showerhead electrode assembly 100 shown in Figure 1 is generally used for the electrostatic chuck (not shown), and this chuck has flat bottom electrode, this bottom electrode upper support wafer and separate 1 with it to 2cm below this top electrode 110.An example of this plasma handling system is a parallel plate type reactor, as this Dielectric etch systems, by Calif, the LamResearch Corporation of Fremont makes.This gripping mechanism is controlled the temperature of wafer by providing backside helium atmospheric pressure (heat transfer rate between its control wafer and the chuck) to provide.

[0021] this top electrode 110 is expendable partses, and it must regularly replace.In a preferred embodiment, this top electrode 110 is showerhead electrodes, provide a plurality of isolated gas passing aways 106, the size of these passages and distribution are suitable for providing process gas, this process gas excite by this electrode and the conversion zone below this top electrode 110 in form plasma.

[0022] this showerhead electrode assembly 100 also comprises plasma restriction assembly (or wafer area plasma (WAP) assembly) 180, and it is around the external margin of this top electrode 110 and this backing member 140.These ions restriction assemblies 180 are preferably by one pile or a plurality of separated limit collar 190, and it is around the external margin of top electrode 110 and this backing member 140.During handling, these ion restriction assemblies 180 produce pressure differential in conversion zone, and increase the resistance between this reaction chamber wall and this plasma, limit the plasma between this top electrode 110 and this bottom electrode (not shown) thus.

[0023] trial employment period, these limit collars 190 are with these ion limits isoionic pressure in this chamber volume and control reative cell.Is the function of many factors with these ion limits built in this reative cell, comprises this limit collar outside and plasma pressure inside, gas type and flow rate and RF power level and frequency in spacing between this limit collar 190, this reative cell.For effective plasma confinement, the pressure in these limit collar 190 outsides should be low as much as possible, is preferably lower than 30 millitorrs.If the spacing between the limit collar 190 is very little, the easier realization of the restriction of this plasma so.Usually, for this restriction, require 0.15 inch or littler spacing.Yet the spacing between these limit collars 190 also determines isoionic pressure, and wishes that this spacing can be regulated to obtain the needed pressure of optimised process performance and keep plasma simultaneously.Process gas from gas source is provided to electrode 110 by the one or more passages in this upper plate 104.Then, this gas distributes by the isolated dividing plate of one or more vertical direction and passes gas distributing hole 106 in this electrode 110 equably this process gas is disperseed into conversion zone 102.

[0024] disk that this internal electrode 120 is preferably flat or plate, it has consistent thickness from the center (not shown) to outer rim.If this plate is made by single crystal silicon material, the diameter of this internal electrode 120 can less than, be equal to or greater than pending wafer (for example, up to 300mm).In order to handle the 300mm wafer, this outer electrode 130 is suitable for the diameter of this top electrode 110 is extended to 17 inches from about 15 inches.This outer electrode 130 can be continuous member (for example, the polysilicon member is as ring), or sectional members (for example, 2-6 the fragment of separating that is arranged as circular structure is as the monocrystalline silicon section).This internal electrode 120 preferably includes a plurality of gas passages 106, is used for process gas is spurted into the space of indoor these top electrode 110 belows of plasma reaction.

[0025] monocrystalline silicon is the preferred material that is used for the plasma exposed surfaces of this internal electrode 120 and this outer electrode 130.High-purity, monocrystalline silicon make the pollution minimum of substrate during the plasma treatment, because it does not only wish element to what this reative cell was introduced minimum, but also smoothly wearing and tearing during plasma treatment make that thus particle is minimum.The optional material that can be used for the plasma exposed surfaces of this top electrode 110 comprises, for example, and SiC, SiN and AlN.

[0026] textural, this showerhead electrode assembly 100 is enough big to handle big substrate, as the semiconductor wafer of 300mm diameter.For the 300mm wafer, these top electrode 110 diameters are 300mm (millimeter) at least.Yet the size of this showerhead electrode assembly 100 can be made as the substrate of handling other wafer sizes or non-circular configuration.

[0027] Fig. 2 illustrates the cutaway view of the part of Fig. 1 showerhead electrode assembly.As shown in Figure 2, this showerhead electrode assembly 100 comprises internal electrode 120, outer electrode 130, this inside backing member 150, this outside backing member 160, this outer shroud or guard ring 170 and this plasma confinement rings 190.In this structure, this internal electrode 120 is preferably to extend jointly with this inside backing member 150, and this outer electrode 130 extends jointly with this backing member that centers on 160.Yet, these inside backing member 150 extensible this internal electrodes 120 that exceed, thus this backing member 140 (Fig. 3) can be single disk or the plate that is used for supporting this internal electrode 120 and this outer electrode 130.This internal electrode 120 and this outer electrode 130 preferably utilize elastomeric adhesives to attach to inside and outside internal structure 150,160.This inside backing member 150 comprises gas passage 108, and it is aimed at the gas passage 106 in this internal electrode 120, air-flow is provided into this plasma treatment chamber.Gas passage 108 general diameters of this inside backing member 150 are about 0.04 inch, and the gas passage 106 of this internal electrode 120 typically has a diameter from about 0.025 inch.

[0028] this inside backing member 150 and this outside backing member 160 are preferably made by the material compatible with the process gas chemistry that is used for handling semiconductor chip in this plasma treatment chamber, have and the tight matched coefficient of thermal expansion of this electrode material, and/or conduction and heat conduction.The preferred material that can be used to make this backing member 140 (comprising this inside and outside backing member 150,160) can include, but not limited to graphite, carborundum, aluminium (Al) or other suitable materials.

[0029] this inside and outside electrode 120,130 can utilize heat conduction and electrically conductive elastic jointing material (not shown) to be attached at this inside backing member 150 and outside backing member 160 respectively.This elastic binding material is considered relatively moving between this top electrode 110 and this backing member 140 during the thermal stress that causes owing to thermal cycle.This jointing material also this inside and this outer electrode 120,130 and should inside and this outside backing member 150,160 between transmit heat and electric energy.Need to use elastic binding material that the surface of electrode assemblies 100 is bonded together, for example, in the U.S. Patent No. of owning together 6,073,577, its integral body is combined in here by reference.

[0030] this inside backing member 150 and this outside backing member 160 preferably utilize suitable fasteners to be connected to this thermal control member 102, and this securing member can be bolt, screw etc.For example, the bolt (not shown) can inject in the hole in this thermal control member 102 and be screwed in the threaded openings in this backing member 140.This thermal control member 102 comprises sweep 184, and preferably by the metal material manufacturing of machining, as aluminium, aluminium alloy etc.This upper plate 104 is preferably made by aluminum or aluminum alloy.These ion restriction assemblies (or wafer area plasma assembly (WAP)) 180 are located at outside this showerhead electrode assembly 100.The suitable plasma restriction assembly 180 that comprises the adjustable plasma confinement rings 190 of a plurality of vertical direction is being owned U.S. Patent No. 5,534 together, describes in 751, and its integral body is combined in here by reference.

[0031] Fig. 3 illustrates the cutaway view of the showerhead electrode assembly part of Fig. 2, the backing member 140 and the guard ring 170 that comprise top electrode 110 with internal electrode 120 and outer electrode 130, be made up of single disk or plate.As shown in Figure 3, this backing member 140 can extend beyond the outer rim 121 of this internal electrode 120 instead, thereby can use single backing member 140, rather than inside backing member 150 as shown in Figure 2 and outside backing member 160.The outer rim 121 of this internal electrode 120 is normally vertical, as shown in Figure 3.Yet, can recognize that the outer rim 121 of this internal electrode 120 can have non-perpendicular direction.

[0032] as shown in Figure 3, the inner edge of outer electrode 130 and outside can comprise inner surface and outer surface, and they tilt towards the lower surface of this outer electrode.This inside and outside surface is with the extensible recessed region 102 of the lower surface of outer electrode 130 degree of depth bigger than the lower surface of this internal electrode 120.The surface, inside of this outer electrode 130 can be described as step 111, as owns U.S. Patent No. 6,824 together, describes in 627, and its integral body is combined in here by reference.Provide this step 111 to be controlled near the isoionic density that forms the hungry lower surface of exposure during the plasma treatment.This step 111 preferably substantial alignment and is made as just in this Waffer edge outside above the edge ring (not shown) of this lower electrode.The angle of this surface, inside and this outer surface is preferably at about 15 and 85 degree.

[0033] according to an embodiment, this outer electrode 130 is preferably formed by a plurality of sections, and wherein these sections utilize elastic binding material to attach each other.These a plurality of sections expansions for this outer electrode 130 during processing semiconductor or the substrate in processing region 102 make allowances.During handling, heat is delivered to this inside backing member 150, this outside backing member 160 and this guard ring 170 by heat conduction from this internal electrode 120 and this outer electrode 130, then to this upper plate 104.

[0034] Fig. 4 illustrates according to an embodiment, the vertical view of guard ring 170.As shown in Figure 4, this guard ring 170 is preferably circular, has internal diameter 171 and external diameter 173 (Fig. 5).

[0035] Fig. 5 illustrates the cutaway view of the guard ring 170 of Fig. 4 along 5-5.As shown in Figure 5, this guard ring 170 is circular, has internal diameter 171 and external diameter 173.According to an embodiment; for top backing member with about 16.620 to 16.660 inches external diameters; these guard ring 170 internal diameters 171 are preferably 16.695 to 16.725 inches, and more preferably about 16.705 to 16.715 inches, most preferably about 16.710 inches.For the top backboard member with about 16.620 to 16.660 inches external diameters, the external diameter 173 of this guard ring is preferably about 16.980 to 17.020 inches, and more preferably about 16.990 to 17.010 inches, most preferably about 17.000 inches.Can recognize that the inside and outside footpath 171,173 of this guard ring 170 will change according to the external diameter of this backing member 140 of the external diameter that comprises this outside backing member 160.

[0036] Fig. 6 illustrates according to an embodiment, the cutaway view of this guard ring 170.As shown in Figure 6, this guard ring 170 preferably has the square-section, and it has inner edge 172, outside 174, lower surface 176 and upper surface 178.This inner edge 172 and this outside 174 preferably have about 0.380 to 0.394 inch height 177, more preferably about 0.384 to 0.390 inch, most preferably about 0.387 inch, and width 179 is about 0.140 to 0.150 inch, more preferably about 0.142 to 0.147 inch, most preferably about 0.145 inch.According to an embodiment, the angle between this inner edge 172, this outside 174, this lower surface 176 and this upper surface 178 is preferably fillet, and radius is between about 0.025 to 0.010 inch.Can recognize that the height of this guard ring 170 and width 177,179 can change according to the height and the width of the backing member 140 of height that comprises this backing member 160 and width.

[0037] Fig. 7 illustrates according to an embodiment, has around the cutaway view of the part of this outer electrode 110 of the guard ring 170 of this outside backing member 160 and backing member 140.As shown in Figure 7, this guard ring 170 centers on this outside backing member 160, and preferably is configured to be provided with one heart or centering around the outside 164 of this outside backing member 160.This guard ring 170 has inner edge 172, outside 174, lower surface 176 and upper surface 178.Between the inner edge 172 of the outside 164 of this outside backing member 160 and this guard ring 170, there is internal clearance 200.This guard ring 170 is the center by centring element 210 with the outside 164 of this outside backing member 160 preferably.

Can recognize that [0038] the suitable centring element 210 that this guard ring 170 can use the device that has spring, spring-like or other flexible members 220 is the center with the outside 164 of this outside backing member 140.As shown in Figure 7, this outside backing member 160 preferably includes a plurality of holes or cavity 212, and it is suitable for holding this centring element 210, produces internal clearance 200 between the inner edge 172 of the outside 164 of this outside backing member 160 and this guard ring 170.These holes or cavity 212 have diameter 214, and it is a bit larger tham the external diameter of this centring element 210.This centring element 210 is suitable in the thermal expansion of upper electrode 110, this backing member 140 and this guard ring 170 and/or contraction process the gap between the inner edge 172 of the outside 164 of this outside backing member 160 of control and this guard ring 170.In addition, upper radial gap (or outer gap) 244 is present between the inner edge 182 of the outside 174 of this guard ring 170 and these ions restriction assembly 180.

[0039] as shown in Figure 7, this guard ring 170 is directly arranged on the upper surface 138 of this outer electrode 130, and centers on this backing member 140 with one heart by this centring element 210.Radial clearance 244 between the outside 174 of this guard ring 170 and the inner edge 182 of this restriction assembly 180 preferably remains on constant distance; thereby this system 100 may operate on the wider temperature range, and this scope provides constant gas performance during use and provides improved performance for this system 100.

[0040] according to an embodiment, outer radial gap 240 can comprise lower radial gap 242 and upper radial gap 244.This lower radial gap 242 the outside 134 of this outer electrode 130 and should the inner edge 182 of restriction assembly 180 between.This upper radial gap 244 the outside 174 of this guard ring 170 and should the inner edge 182 of restriction assembly 180 between.For 300mm upper electrode assembly, before expansion and the contraction, this upper radial gap 244 is preferably 0.0325 to 0.0375 inch in these electrode assemblies 100 uses, and more preferably about 0.035 inch.This lower radial gap 242 is preferably about 0.058 to 0.060 inch, more preferably about 0.059 inch.

Can recognize that [0041] because this upper electrode 110, this backing member 140 are different with these guard ring 170 employed materials, this upper radial gap 244 and this lower radial gap 242 can change at system's run duration.Yet, can recognize, by increasing this guard ring 170, can control this difference, thereby this system will provide improved performance on the temperature range of operation of broad.

Can recognize that [0042] this guard ring 170 is preferably by making with contiguous wafer area plasma (WAP) restriction assembly 180 identical materials (for example, quartz).As shown in Figure 7, these restriction assembly 180 diameters are bigger than the external diameter 173 of this guard ring 170.Use or run duration at this plasma chamber, this guard ring 170 expands and/or contraction with the speed similar to this restriction assembly 180 that comprises a plurality of limit collar 190 (not shown)s.Therefore, on wider temperature range, this guard ring 170 and this comprise and keep constant radial clearance 240 between the restriction assembly 180 of a plurality of limit collars 190 that this temperature range provides constant gas flow capability.

[0043] can recognize, according to an embodiment, this guard ring 170 be by have low thermal coefficient of expansion (CTE), the material of dimensionally stable forms on wider temperature range.Perhaps, this guard ring 170 can be formed by the different materials with similar thermal coefficient of expansion with this restriction assembly 180 (comprising this a plurality of limit collars 190), and wherein this material has insulation or has the dielectric material attribute.In the use, this guard ring 170 makes the variation minimum of this radial clearance 244 in this indoor service conditions process of change between this guard ring 170 and this restriction assembly 180 (comprising this a plurality of limit collars 190).

[0044] according to another embodiment, this radial clearance 244 is enough greatly to guarantee that this guard ring 170 can radially not contact each other with this restriction assembly 180 (comprising this a plurality of limit collars 190) under the combined effect of worst condition tolerance and worst condition aligning.In addition, this radial clearance 244 preferably keeps minimum gap, and it remains on gas conduction alap degree in the zone of gas flow paths for the chamber performance of the best.

[0045] in addition, this radial clearance 200 between this guard ring 170 and this upper electrode backing member 140 can minimize, thereby can control tolerance better.As mentioned above, this internal clearance 200 preferably is configured to like this, and promptly this guard ring 170 and this top backboard member 140 can not contact with each other during use.Can recognize that the internal clearance 200 between the outside 164 by keeping this outside backing member 160 and the inner edge 172 of this guard ring 170 can be avoided contacting comprising under the combined state that worst condition tolerance and worst condition are aimed at.In addition, can recognize that this upper electrode backing member 140 can be avoided the contact between this backing member 140 and this guard ring during system's range of operation thermal expansion.In addition, this guard ring 170 minimizes these upper electrode backing member 140 external annular surface and is exposed to the free group of this plasma and the view-factor of ion bombardment.According to an embodiment, for the backing member of being made up of aluminium 140, the surface row that can eliminate and/or be minimized in this backing member 140 forms aluminum fluoride.

[0046] this guard ring 170 is suitable for minimizing or eliminate any end play between the silicon face of this guard ring 170 and this support upper electrode, thereby this guard ring 170 can protect the cementing line that exposes between this silicon upper electrode 110 and this backboard or the backing member 140 can not be subjected to the free group of this plasma and the corrosion function of ion bombardment.In addition, can recognize that this guard ring 170 can also minimize or eliminate process gas and flow through the cementing line of this exposure to optimize the chamber performance.

[0047] according to another embodiment, this guard ring 170 also can minimize the end play between this guard ring 170 and this thermal control member 102.Can recognize that this guard ring 170 also can make these thermal control member 102 surfaces be exposed to the degree minimum of isoionic free group and ion bombardment.

[0048] according to further embodiment; guard ring 170 is increased to this plasma etching chamber and this backing member 140 and passes through the above-mentioned whole factors of control, and arc discharge or the plasma that can eliminate between this upper electrode backing member 140 and this limit collar 190 are lighted.

[0049] Fig. 8 illustrates according to another embodiment, the cutaway view of this guard ring.As shown in Figure 8, this guard ring 170 has the bottom 175 (or fillet surface) of inclination, and it extends to this lower surface 176 from this inner edge 172.This inner edge 172 and this outside 174 preferably have about 0.332 to 0.372 inch height 177, more preferably about 0.342 to 0.362 inch and most preferably about 0.352 inch, width 179 is about 0.140 to 0.150 inch, more preferably about 0.142 to 0.147 inch, and most preferably about 0.145 inch.The bottom 175 of this inclination can extend to this outside 174 about distances of 0.090 to 0.110 from this inner edge 172, and is more preferably about 0.100, and forms the angles of about 50 to 70 degree, more preferably about 60 degree with this inner edge.According to an embodiment, the angle between the bottom 175 of this inner edge 172, this outside 174, this lower surface 176, this upper surface 178 and this inclination is preferably fillet, and radius is between about 0.025 to 0.010.Can recognize that at the angle that this inner edge 172 and this bottom 175 intersect, this angle comprises maximum about 0.005 inch edge break.

[0050] Fig. 9 illustrates according to another embodiment, this upper electrode 110 and having around the cutaway view of the part of the backing member 140 of the guard ring 170 of exterior upper backboard member 160.As Fig. 9, this system comprises guard ring 170, and it has the bottom 175 (or fillet surface) of inclination that extends to the lower surface 176 of this guard ring 170 from the inner edge 172 of this guard ring 170.The centring element 210 of annulus 230 forms is located between the bottom 175 of inclination of the outside 164 of this outer electrode 160 and this guard ring 170, and is located on the upper surface 138 of this outer electrode 130.This annulus 230 preferably by

(polytetrafluoroethylene (PTFE)), fluorinated polymeric material, polyimides (as

) or the hollow ring that forms of other suitable polymerizations or similar polymeric material.Can recognize, so preferably to have the material of minimum coefficient of friction if can not use the PDFE material owing to other factors.This annulus 230 be used in this backing member and 170 uses of this guard ring thermal expansion and shrink during, keep the spacing 200 of homogeneous between this outside backing member and this guard ring 170 at the whole girth of this guard ring 170.

[0051] according to the described embodiment of Fig. 9, this guard ring 170 does not preferably rest or places on the upper surface 138 of this top or outer electrode 110,130.Optimize angle between the surface 172,175 and the gap between the surface 176 and 138 and under all heat and tolerance conditions, do not contact or do not form contact to guarantee surface 176.Can recognize that this annulus 230 can also stop any sight line or gas flow paths to this upper electrode adhesive and this exterior conical surface, it protects this upper electrode adhesive and is not subjected to isoionic free group and ion bombardment infection.In addition, this protects this upper electrode backboard outer surface not exposed by isoionic free group and ion bombardment influences, and does not have relevant aluminum fluoride to form.

[0052] the present invention is described with reference to a plurality of preferred embodiments.Yet, it will be apparent to one skilled in the art that under the situation that does not deviate from purport of the present invention, the present invention can also be embodied as and be different from described other concrete forms.The preferred embodiment is illustrative, in any case can not think restrictive.Scope of the present invention is provided by claims, rather than the description of front, and all changes and the equivalent way that fall into the claim scope all are included in wherein.

Claims (19)

1. the electrode assemblies of a plasma reaction chamber that uses in semiconductor chip is handled comprises:

Upper electrode;

Backing member, this backing member can be attached at the upper surface of this upper electrode; And

Outer shroud, it centers on the outer surface of this backing member and is positioned on the upper surface of this upper electrode.

2. assembly according to claim 1, wherein; (a) this outer shroud is made up of quartz;

(b) this backing member is made up of aluminum or aluminum alloy; (c) this upper electrode is made up of monocrystalline silicon; And/or (d) this upper electrode comprises internal electrode and outer electrode.

3. assembly according to claim 2, wherein this outer electrode comprises a plurality of sections, forms outer electrode rings and has overlapped surfaces at this each interface place of a plurality of sections.

4. assembly according to claim 1, wherein: (a) this backing member comprises inner backing member and outside backing member; (b) jointing material attaches to this backing member with the upper surface of this upper electrode; And/or (c) this upper electrode is made up of monocrystalline silicon.

5. assembly according to claim 1, wherein this outer shroud has the square-section.

6. assembly according to claim 1, wherein this outer shroud has inner edge, and it comprises upper vertical surface and lower tilt surface.

7. assembly according to claim 1, wherein the lower surface of this outer shroud extends in the outside of the upper surface of this upper electrode.

8. assembly according to claim 7, wherein: (a) this outer shroud has square-section substantially; (b) this backing member is made up of aluminum or aluminum alloy; This electrode is made up of monocrystalline silicon; And/or (d) this outer shroud is made up of quartz.

9. the guard ring of the electrode assemblies of a plasma reaction chamber that in semiconductor chip is handled, uses, wherein this electrode assemblies comprises the showerhead electrode that is bonded to backing member and around the limit collar assembly of this electrode assemblies, this guard ring comprises:

Guard ring is configured to be installed between the inner edge of the outer rim of this backing member and this limit collar assembly, and this guard ring has the lower surface of the upper surface that is suitable for covering this upper electrode.

10. guard ring according to claim 9, wherein this guard ring is made up of quartz, and comprises coating on the edge within it alternatively.

11. one kind makes guard ring is the method at center with the backing member of electrode assemblies, wherein this backing member is bonded at semiconductor chip and handles the isoionic electrode of generation in the plasma reaction chamber, and this method comprises:

With the outer surface setting of this guard ring around this backing member, thereby the lower surface of this guard ring covers the upper surface of this upper electrode.

12. method according to claim 11 further comprises this electrode assemblies is installed in this plasma chamber.

13. a method of handling semiconductor chip in the plasma chamber of the electrode assemblies that comprises claim 1 comprises:

Semiconductor chip is supported on the lower electrode of this plasma chamber, this lower electrode is separated by gap and this upper electrode;

Process gas provided enter this gap and this process gas is actuated to plasma; With

Utilize this semiconductor chip of this plasma treatment.

14. method according to claim 13, wherein this plasma is limited in this gap by the plasma confinement rings assembly, and during this was handled, this outer shroud kept predetermined distance between this electrode assemblies and this plasma confinement rings assembly.

15. method according to claim 13, wherein this outer shroud prevents that this plasma from attacking the adhesive between this backing member and this upper electrode.

16. method according to claim 13, wherein this processing comprises plasma etching.

17. method according to claim 13 wherein during this is handled, is applied to this semiconductor chip with the RF bias voltage.

18. method according to claim 13, wherein during this was handled, this outer shroud was with the speed thermal expansion identical with the limit collar of this plasma confinement rings assembly.

19. method according to claim 14, wherein the limit collar of this outer shroud and this plasma confinement rings assembly is made up of quartz.

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