CN101529556B - Combined system structure for processing substrate - Google Patents
Combined system structure for processing substrate Download PDFInfo
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- CN101529556B CN101529556B CN2007800402135A CN200780040213A CN101529556B CN 101529556 B CN101529556 B CN 101529556B CN 2007800402135 A CN2007800402135 A CN 2007800402135A CN 200780040213 A CN200780040213 A CN 200780040213A CN 101529556 B CN101529556 B CN 101529556B
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemically Coating (AREA)
- Weting (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention discloses a cluster architecture and methods for processing a substrate. The cluster architecture includes a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules. The lab-ambient controlled transfer module and the one or more wet substrate processing modules are configured to manage a first ambient environment. A vacuum transfer module that is coupled to the lab-ambient controlled transfer module and one or more plasma processing modules is also provided. The vacuum transfer module and the one or more plasma processing modules are configured to manage a second ambient environment. And, a controlled ambient transfer module that is coupled to the vacuum transfer module and one or more ambient processing modules is also included. The controlled ambient transfer module and the one or more ambient processing modules are configured to manage a third ambient environment. The cluster architecture therefore enables controlled processing of the substrate in either the first, second or third ambient environments, as well as during associated transitions. The embodiments also provide for efficient methods for filling a trench of a substrate.
Description
Background technology
Generally, semiconductor machining is to carry out strictly controlled environment and tool operation with the mode of high degree of controlled.For example, settle the clean room of these instruments must satisfy the strict demand and other controlled parameter of the quantity of the particle that restriction possibly produce in operating process.In technical process, possibly require between many systems, repeatedly to move substrate, and handle as required with the equipment needed thereby that forms IC-components, required layer and desired structure and repeatedly repeat moving between system.
The qualified products of semiconductor wafer although semiconductor equipment must satisfy strict regulations, these stipulate that common great majority are to link together with individual instrument.In operation, in the wet type instrument, handle substrate if desired, substrate must be transferred to another instrument after wet instrument is accomplished this processing so, and this instrument possibly be dry.In the preparation process, can use clean room's automated system to move these substrates at Tool Room.Usually, substrate is in the container of sealing, to transmit or move, and is connected with other instrument afterwards.Therefore, when needs carry out plasma processing operation, can substrate be moved to by one or more transport modules and the formed combination tool of dried module.
Generally, plasma treatment module connects together with combination tool, but this combination tool is confined to have the Cement Composite Treated by Plasma or the technology type of identical environment.Or rather, when this processing is dry process (for example Cement Composite Treated by Plasma), will in this combination tool, handles substrate and move substrate until arts demand and in another kind of system, handle.Although the substrate transport between extreme care ground operational module and combination, yet substrate contacts oxygen.This oxygen possibly be the oxygen that is present in clean room's (or airtight container).Though control and purified the environment of this clean room, before carrying out next operation, substrate contacts the oxidation that oxygen can cause substrate feature or layer in moving process.In the time of most of, knownly cause fabrication schedule to comprise extra oxide removal step, need more costs and circulation owing to substrate in the transmission course in the clean room is exposed to oxygen.Yet even carried out the oxide removal step, the stand-by period before getting into next step still possibly cause the generation of some oxidations.
In view of the foregoing, need be used for avoiding system, structure and method simultaneously for the unnecessary contact of uncontrolled environment in the process for making handle substrate.
Summary of the invention
Generally speaking, embodiment satisfies above-mentioned needs through the method that is provided for handling the combining architecture of substrate and be used for shifting in each module of this combining architecture.Handle in station and the transmission course between one or more transport modules at each, the treatment process of substrate is under controlled surrounding environment, to carry out, and this also can directly carry out coating on the barrier layer, and need not be used for the inculating crystal layer of Gap filling technology.Should understand the present invention can be achieved in many ways, comprises like scheme, method, technology, device or system.Describe in the face of several kinds of creative embodiment of the present invention down.
In one embodiment, disclosed a kind of combining architecture that is used to handle substrate.This combining architecture comprises the laboratory environment controlled transfer module with one or more substrate wet processed module couplings.This laboratory environment controlled transfer module and these one or more substrate wet processed modules are set to manage first surrounding environment.In addition, a kind of vacuum transport module is provided also, itself and laboratory environment controlled transfer module and one or more plasma treatment module are coupled.This vacuum transport module and one or more plasma treatment module are set to manage second surrounding environment.And, also comprising a kind of controlled environment transport module, itself and vacuum transport module and one or more environmental treatment module are coupled.Controlled environment transport module and one or more environmental treatment module are set to manage the 3rd surrounding environment.Therefore, this combining architecture can controllably be handled substrate in any of first, second or the 3rd surrounding environment.In an example, first, second is isolated by groove valve and load lock with the 3rd surrounding environment.When substrate passed the load lock transfer, the groove valve limited the isolation between each surrounding environment, wherein under the situation of the external oxygen environment that substrate is not exposed to combining architecture, in combining architecture, can carry out dry plasma process and wet processed.
In another embodiment, disclosed the method for in combining architecture, handling substrate.This method comprises configuration laboratory environment transport module to connect one or more wet processed modules, and wherein each said transport module and said one or more wet processed module are moved under first surrounding environment.This method also is provided with the vacuum transport module and connects one or more plasma treatment modules, and wherein each said vacuum transport module and said one or more plasma treatment module move under second surrounding environment.In addition, this method comprises also and the controlled environment transport module is set to connect one or more coating modules that wherein each said controlled environment transport module and said one or more coating module are operated under the 3rd surrounding environment.According to this method, can in said combining architecture, between said first, second and the 3rd surrounding environment, change under the situation that does not contact outside uncontrolled environment.
In one embodiment, a kind of method that is used under controlled environment, filling substrate trenches is provided.This method starts from first chamber of combination tool etched trench on substrate.In second chamber of combination tool, deposition is set for the barrier layer that prevents electron transfer above the exposed surface of this groove, in combination tool, fills this groove with the sealant that directly is deposited on the barrier layer afterwards.
In another embodiment, a kind of method that need not on substrate, to use inculating crystal layer and carry out Gap filling technology is provided.This method comprises and limits on the fluted substrate surface deposition first barrier layer within it.On this first barrier layer, deposit second barrier layer, and fill the open area of this groove with the lip-deep electric conducting material that directly is deposited on second barrier layer.
A kind of semiconductor device by a technology manufacturing, this technology comprise the operation of following method: in first chamber of combination tool on substrate etch features; Deposition is set to prevent that copper from diffusing into the barrier layer of the exposed surface of said characteristic in second chamber of combination tool; And the sealant with directly being deposited on the barrier layer is filled said characteristic.
By following combining accompanying drawing, will making others of the present invention and advantage obvious as the detailed description of principle of the invention example.
Description of drawings
Through following detailed description with the accompanying drawing, the present invention will readily appreciate that, and similarly reference marker is pointed out similar structural detail.
Fig. 1 shows exemplary system diagram according to an embodiment of the invention and the computer control that can manage the system that is used for specially designed manufacturing operation.
Fig. 2 A-2D6 has explained example hardware according to an embodiment of the invention, and this example hardware can be realized the controlled environment treatment process.
Fig. 3-4 has explained exemplary process flow process according to an embodiment of the invention, and this example technological process can be carried out through in controlled environment, carrying out between transport module and processing module, to change to get more easily.
Fig. 5 has explained example flow diagram according to an embodiment of the invention, and it can be carried out when the decision of the conversion of the technology between the processing region of making the controlled environment module.
Fig. 6 is the rough schematic view of explanation according to an embodiment of the invention each layer of substrate of being used to handle.
Fig. 7 explanation has the layer that is etched in groove wherein.
Fig. 8 explanation is deposited over the rough schematic view of the conformal barrier on the exposed surface of exposed surface and groove of substrate.
Fig. 9 is the rough schematic view that explanation is deposited over second conforma layer on the barrier layer.
Figure 10 explanation is carried out copper and is filled processing with the preparation copper cash in groove after executing planarizing process.
Figure 11 explains according to one embodiment of present invention, thereby explains and be used for directly on the barrier layer, carrying out the FB(flow block) that Gap filling technology need not the method operation of PVD inculating crystal layer.
Embodiment
Disclosed several exemplary embodiment, it has defined the combining architecture and the method that is used in each module of this combining architecture, changing of the example that is used to handle substrate.In each stage of treatment process and the process between one or more transport modules, transmitted, the treatment process of substrate moves under controlled environment.Limit and control in the diverse combined system and the integrated combining architecture of the ambient condition between them through providing; Make different layers, different characteristic or different structure after executing other treatment process in can be in same total system at once; Prevent substrate and uncontrolled environment (for example, than desirable have more polyoxy or other undesirable element and/or moisture) contact simultaneously.Should understand the present invention can be achieved in many ways, comprises technology, method, device or system.Describe in the face of several kinds of creative embodiment of the present invention down.But what it will be apparent to those skilled in the art that is in a part of not setting forth here or whole also embodiment of the present invention under the situation of details.
The application that can benefit from the controlled environment of the embodiment that limited is the electroless deposition of metal level, and it highly depends on substrate surface characteristic and formation.For example, on such as the barrier metal surface of tantalum (Ta) or ruthenium (Ru) electroless plating copper attract to electroplate and in photoengraving pattern the inculating crystal layer before selective deposition copper (Cu) line form.
Subject matter (at present being overcome by the embodiment that the present invention limited) is that the thin native metal oxide layer of atom level that under the situation that has oxygen (O2), forms suppresses electroless deposition process.Selectivity covering process on copper cash and other are used and are also had similar situation.Exemplary layers/material is the cobalt alloy cover layer that can comprise CoWP (phosphatization cobalt tungsten), CoWB (boronation cobalt tungsten) or CoWPB (cobalt tungsten boron phosphide).Cover layer is used to improve the adhesion of insulation barrier and copper cash, thereby improves the electron transfer performance of those copper cash.
Therefore, it is crucial suitably managing the design interface surface treatment procedure of depositing operation (for example prior to).This design interface can be layer, characteristic or material.Therefore, make the pure surface of preparation atom level with to keep pure interface easy through the controlled environment architecture that in the present invention, defines, said controlled environment architecture provides suitable surface to prepare order with the controlled environment mode.For example, in the CoWBP covering process, formulate electrolytics to be provided at the selective deposition on the copper that exposes of contiguous medium top.
In some examples, before electroless plating, confirm wafer surface and various different interfaces through process upstream (being generally CMP and back-CMP cleaning process).Under both of these case, through with BTA passivation Cu surface and form the Cu-BTA complex and control Jafani effect (galvanic effect) and corrosion.Before coating, this metal organic mixture must be removed, otherwise coating will be suppressed.In addition, dielectric surface is cupric and oxide thereof not, and the copper surface must not have Cu oxide.In one embodiment, controlled environment composite module (clustered modules) satisfies these conditions, and these modules prevent that unnecessary environment contact is in order to avoid possibly cause minus effect to required manufacturing operation.
An example difference between prior art system and the system of the present invention is not controlled at the environment in treatment chamber and the transmission chamber all the time for module combinations structure before, so the interface is controlled and stable to maintenance between next process sequence at a process sequence.Do not having under the situation of controlled environment, even in the shortest stand-by period, the ready interface of institute is almost moment degraded or change also.
Consider above-mentioned description, existing with reference to the exemplary configurations configuration that can under controlled ambient, handle substrate.Fig. 1 has explained a kind of controlled environment combined system according to an embodiment of the invention (cluster system) 100.This controlled environment combined system 100 comprises some controlled environment processing station 102a, 102b and 102c.Each controlled environment handle station all be through keep each handle in station environment and between the different disposal station mode of controlled environment conversion interconnected.These controlled environment are handled in stations each all can be regarded as first, second or the 3rd surrounding environment.When the conversion between surrounding environment through advancing of transport module and processing module the concrete method for making of selecting during with the design sequence decision, do not limit the order of first, second and the 3rd surrounding environment.
In one embodiment, controlled environment combined system 100 is set can accurately handle the for example layer or the characteristic of the Semiconductor substrate of semiconductor wafer.Treat that layer or the characteristic on particular wafer, made will depend on the processing station.For example, this treatment process can be FEOL (FEOL), any processing order or step between back-end process (BEOL) or two processing procedures.An example is provided now, and wherein controlled environment combined system 100 is used for prepared layer or characteristic under controlled ambient.
In operating procedure 110, confirm layer to be prepared, thereby can prepare this layer through the different disposal station 102 of this controlled environment combined system 100.In case operating procedure 100 has been confirmed layer or characteristic, executable operations step 112 is handled the connection between the disparate modules in the station to be arranged on each controlled environment so, can carry out required processing.Each controlled environment is handled station 102 all will comprise the main transport module that will practise physiognomy and connect with locally-attached processing module.For example; Controlled environment is handled station 102c can comprise laboratory environment (lab-ambient) controlled processing module 104c; Controlled environment is handled station 102b can comprise vacuum transport module 104b, and controlled environment is handled station 102a can comprise controlled environment transport module 104a.
Therefore, each transport module 104 will interconnect with controlled conversion (for example load lock), and the particular procedure station that is set in treatment process receives the different disposal module in order to interconnection with it according to processing layer or the necessary structure of characteristic.In operating procedure 114, defined a kind of method for making of connectivity module of the varying environment that is used to move around, and with its input user interface 116.
In this example, loading module 106 is set substrate 105 is provided into controlled environment processing station 102c in the code direction that operates on the user interface 116, this controlled environment is handled the transfer of station 102c control substrate to controlled environment combined system 100.Unload module 108 can receive the substrate of handling through in controlled environment is handled station 102 105.Though accompanying drawing shows that loading module 106 and Unload module 108 are modules of two separations, is to be understood that loading module and Unload module can be the modules of same type, perhaps substrate is sent and is received by identical load port module.
In one embodiment, laboratory environment controlled transfer module 104 is set to receive substrate 105.In case substrate 105 is transferred to laboratory environment controlled transfer module 104c, this laboratory environment controlled transfer module 104c can move under being higher than the pressure that possibly be present in the uncontrolled environmental stress in the clean room a little.
So, when the pressure in the laboratory environment controlled transfer module 104c is high slightly, the handing-over of substrate 105 turnover laboratory environment controlled transfer module 104c will cause that little air flows out laboratory environment controlled transfer module 104c.When open one or more doors with substrate 105 is shifted/when going out laboratory environment controlled transfer module 104c, little air flows out particulate or other surrounding air that laboratory environment controlled transfer module 104c will guarantee to be present in the clean room can't infiltrate laboratory environment controlled transfer module 104c.
In one embodiment, laboratory environment controlled transfer module 104c moves in the inertia controlled environment alternatively.The inertia controlled environment can be discharged oxygen and replaced oxygen with inert gas.For example, can pump into gas example with replacement oxygen can be that argon gas, nitrogen or other do not produce the gas of bad reaction with treatment process.When optionally the inertia controlled environment being offered laboratory environment controlled transfer module 104c, this inertia controlled environment is connected with the processing module that is connected in laboratory environment controlled transfer module 104c.For example, with module that laboratory environment controlled transfer module 104c is connected in any wet-cleaning of carrying out also will be controlled in the inertia controlled environment.
Therefore; Controlled environment transport module 104c will be moved into the substrate 105 that shifts out the various wet treatment system in controlled environment is handled station 102c and dock, and can be with handling the substrate-transfer handled in the station 102c in controlled environment in vacuum transport module 104b.Conversion to vacuum transport module 104b will be carried out under controlled mode through one or more load lock.In case substrate is moved in the vacuum transport module 104b, substrate will be allowed to move in and out various plasma process modules can carry out required processing.Show that also vacuum transport module 104b and controlled environment transport module 104a are coupled.
In addition; Can promote the transfer of substrate 105 between 104b and 104a to guarantee to keep the pressure globality of vacuum transport module 104b through one or more load lock, can substrate 105 be changed in the controlled environment to avoid firm layer or the characteristic of in 104, handling to be exposed to the environment that possibly destroy or poorly change this layer or characteristic inadequately simultaneously.In an example; When the substrate of in controlled environment is handled station 102b, handling 105 is moved into controlled environment and handles station 102a, be exposed to possibly destroy characteristic that chemical modification had just been handled or layer uncontrolled environment not the plasma treated characteristic of entail dangers to or layer.
For example, controlled environment transport module 104a will operate under inert environments.As stated, inert environments is full of the environment of inert gas, and it should be got rid of or reduce controlled environment and handle the maximum oxygen content in the station 102a.For example, acceptable and oxygen level that be considered to be basic anaerobic is 3ppm (1,000,000/), or below.After surface treatment, before the subsequent treatment or during in, some treatment process possibly require the oxygen control less than 1ppm.Through being drawn at environment to handle in the station 102a inert environments is set, can avoids the oxidation or the hydroxylating of firm characteristic that in controlled environment is handled station 102b or 102c, prepare of possibility or layer.In controlled environment transport module 104a, various processing modules will allow under the situation of the intermediate oxidation of no any layer or characteristic on substrate 105 controllably deposition, coating, coating or processing layer or characteristic.So, the layer that in the controlled environment processing module is handled station, forms is controlled, and is called " design " in one embodiment, possibly reduce the unnecessary oxide that is processed the layer or is processed the performance of characteristic to avoid forming.
At this moment, can substrate 105 be retracted vacuum transport module 104b and further handle, perhaps retract laboratory environment controlled transfer module 104c in order in connected module, to carry out extra processing in order to utilize plasma treatment module.Handle the define method that the detailed process that moves substrate 105 among station 102a, 102b and the 102c between any station will depend on affirmation operating procedure 114 in controlled environment, this define method by with computer that user interface 116 is connected on the program carried out control.
Fig. 2 A has explained the combining architecture 200 that comprises some transport modules and the processing module that is connected with these transport modules.This combining architecture 200 be one can with handle the concrete processing module example that station 102a, 102b are connected with various transport modules in the 102c in controlled environment.
This combining architecture 200 is described from left to right, wherein can be at loading or unloading substrate in loading module 106 and the Unload module 108.As stated, loading module 106 generally can be known as platform with Unload module 108, and it can be set up the wafer case 205 of holding one or more wafers in order to reception.This wafer case 205 transmits in the leading portion opening film magazine (FOUP) of wafer around can being comprised in and being used in the clean room.Hold the FOUP operable automatically of wafer case 205 or carry out manual operation through the operator.Therefore, be delivered to combining architecture 200 or when combining architecture 200 receives, substrate 105 will be comprised in the wafer case 205.As defined at this, clean room is non-controlled environment, settles or installation and combination architecture 200 in it.
Laboratory environment controlled transfer module 104c is defined by stretching transmission (stretch transfer) module 201 that comprises one or more end effector 201b.When track 201a moves, the end effector 201b that the gives an example stretching transport module 201 that can move around.In one embodiment, stretching transport module 201 is maintained under the clean room pressure of standard.Perhaps, this pressure of may command is higher than or a shade below the ambient pressure of clean room a little.
If keep the pressure in the stretching transport module 201 to be higher than the clean room a little, the wafer entry/leave should will cause that this transport module had little of gas to drain into the clean room by the stretching transport module so.Therefore, this structure can prevent that particulate or air in the clean room from flowing into stretching transport module 201.
In another embodiment; Migration between stretching transport module 201 and the clean room will be controlled by defining the air and/or the barrier of environment or the suitable filter and the air processor at interface, thereby prevent the interaction of the surrounding air between clean room and the stretching transport module 201.Mode by reference will be at the disclosed United States Patent(USP) No. 6 that is issued to assignee of the present invention on April 2nd, 2002; Being used to of limiting in 364,762 (theming as " the wafer propagation in atmosphere module with controlled microenvironment ") controlled system's example at interface and incorporates into here.
As shown in the figure, stretching transport module 201 docks with wet treatment system 202a and wet treatment system 202b.Each wet treatment system 202 can comprise the plurality of sub module, in these submodules, can handle substrate 105.In an example, in wet treatment system 202a, allow carriage 207 to move along track 203.When handling in each submodule in wet treatment system 202, this carriage 207 is configured to carry substrate 105.In an example, this wet treatment system 202a will comprise contiguous operating desk 204, then be contiguous operating desk 206, and subsequent again is to wipe brush operating desk 208, be finally contiguous operating desk 210 afterwards.
The quantity of the submodule in wet treatment system 202a depends on concrete application and the number of the wet processed step that need on specific substrate 105, carry out.Although in wet treatment system 202a, define four sub-module, the example that two sub-module are arranged in wet treatment system 202b also be provided.Contiguous operating desk 204 is made up of contiguous head system.When making substrate 105 when track 203 moves, this vicinity head system utilizes meniscus applying fluid, to remove fluid on substrate 105 surfaces, thereby can be at the whole surface applications meniscus of substrate 105.
In specific embodiment, contiguous operating desk can be set to use just DI water (deionized water), HF (hydrofluoric acid), amino cleaning solution, standard clean liquid 1 (SC1) and other etching and the cleaning chemistry reagent and/or the mixtures of liquids of cleaning.In specific embodiment, contiguous operating desk will comprise the proximity heads on two surfaces up and down of handling substrate 105.In another example, proximity heads possibly only handled upper surface, and does not handle lower surface, and perhaps lower surface is handled by the roller of wiping the brush operating desk.Therefore, the processing operative combination of in wet treatment system 102a, carrying out will change according to substrate required treatment process in its preparation method.
Should be understood that, stretching transport module 201 is set, perhaps move into the single processing sub of wet treatment system 102a, remove at the end of wet treatment system 201 afterwards to allow the arbitrary specific submodule of substrate 105 turnover in wet treatment system 202.In order to increase output, wet treatment system 201 is arranged to a system that all is connected with the both sides of stretching transport module 201.Certainly, according to required output, available laboratory area or equipment and/or required processing, can comprise still less or more wet treatment system by stretching transport module 201 defined laboratory environment controlled transfer modules.
As shown in the figure, this stretching transport module 201 and load lock 218 and 219 couplings.Load lock 218 and 219 is set to allow between stretching transport module 201 and vacuum transport module 222, being converted to another pressure state from a pressure state with controlled way.Vacuum transport module 222 will comprise end effector 222a.This end effector 222a is set stretches out load lock 218 and 219 when groove valve 220a and 220b provide opening, to put in.The groove valve will be put the door of one or more unlatchings and closed vacuum transport module 222, thereby the pressure in the vacuum transport module is uninterrupted.Therefore, the door of groove valve 220a and 220b can be changed between load lock 218 and 219, and they are used for being controlled at the stretching transport module 201 that possibly be in the different pressures state and the transmission between the vacuum transport module 222.
Shown in accompanying drawing, vacuum transport module 222 also connects through groove valve 220c and 220d and plasma module 270.Plasma module 270 can be the module of any kind, but concrete example can be TCP etch module and downstream microwave etch module.The plasma module that also can combine other type.Some plasma module can comprise polytype deposition module, for example plasma gas phase deposition (PVD), ald (ALD) etc.Therefore, the material on any removal substrate surface or on substrate surface the dry process module of deposition materials all can incorporate and be connected to vacuum transport module 222 into.
Perhaps, can extra use heat treatment module, perhaps replace plasma treatment module.In this case, operation vacuum transport module 222 is favourable under higher pressure, for example up to 400torr, to promote and the docking of heat treatment module.
When in one of these plasma modules 270, carrying out treatment process, the vacuum transport module can merge cooling down operation platform 224.This cooling down operation platform 224 was cooled to substrate that certain is particularly useful when some before substrate is moved into the controlled environment station of a vicinity.In case substrate is cooled, if desired, for after with the substrate controlled environment transport module 232 of moving into, can substrate be moved in the load lock 228 through end effector 222a.Controlled environment transport module 232 is through groove valve 230a and load lock 228 interconnection.
As shown in the figure, groove valve 230b, 230c, 230d and 230e and some processing module 240a, 240b, 240c and the 240d interconnection of controlled environment transport module 232 through being associated.In one embodiment, processing module 240 is controlled environment wet processed modules.This controlled environment wet processed module 240 is set with the surface of processing wafers in controlled inertia surrounding environment.As stated, controlled inertia surrounding environment is set to so: suction inert gas in controlled environment transport module 232, and from controlled environment transport module 232 discharge oxygen.
Through removing all or most of oxygen from controlled environment transport module 232 and replace oxygen with inert gas, controlled environment transport module 232 will provide a conversion environment that in a processing module 240, does not expose the substrate of firm processing the (for example in plasma module 270) on handled surface or the characteristic before deposition, coating or the cambium layer.In specific embodiment; Processing module 240 can be to electroplate module, electroless plating module, driedly advance to do (dry-in/dry-out) wet processed module, perhaps other type can just before the module of application above surface treated or the characteristic, formation or sedimentary deposit in the plasma module.
In addition, vacuum transport module and controlled environment transport module can be set and put upside down combination so that other technique process.
The result is just directly forming design level (engineered layer) on the surface treated, even and should not comprise the general oxide that oxygen also can form that before coating, extremely is exposed in the surface.In a specific embodiment; Can be in plasma module 270 the etching media layer with definition through hole and/or groove; And just in dielectric layer after definition through hole or the groove, transmission is carried out through load lock 228 in vacuum transport module 222 immediately and is got into controlled environment transport module 232.This is transmitted under the situation that anaerobic contacts or almost anaerobic contacts and carries out.In some treatment process, can directly on the surface of design interface, prepare the barrier layer.For example, this barrier layer can comprise Ta, TaN, the composition of Ru or these materials etc.This barrier layer can be used for the copper electroless plating as inculating crystal layer, or directly be plated on the patterned substrate.
Fig. 2 B illustrates the block diagram that can be connected in the possible processing module of the various transport modules of combining architecture 200 ' interior.In this example, provide loading and unloading operating desk 106/108 with will serve as a contrast combining architecture 200 ' and the clean room between introduce or receive substrate.Substrate is introduced the laboratory environment controlled module 104c that can carry out the substrate wet processed.Be arranged on and carry out substrate wet processed and the substrate transport in laboratory environment controlled transfer module under the controlled environment, thereby guarantee under the controlled mode of the uncontrolled environment that substrate is not exposed to the clean room, to carry out the substrate wet processed.
Laboratory environment controlled transfer module is set to be introduced each substrate wet processed module and receives the substrate under the drying regime that is in after the substrate wet processed with the substrate that will be under the drying regime.In this embodiment, the wet type substrate processing is configured to adopt meniscus proximity heads system, and it can directly form fluid on substrate surface, and after handling substrate surface, stays desiccated surface.The environment control of load lock 280 when guaranteeing the transmission between laboratory environment controlled transfer module 104c and vacuum transport module 104b is set.
The another exemplary module that can be connected with controlled environment transport module 104a is supercritical carbon dioxide (CO
2) chamber.In other embodiments, can incorporate hot type (thermal-type) chamber into arbitrary transport module according to technological requirement.For example, a chamber can be overcritical chamber.But chamber can also be the electroless plating chamber of deposit cobalt cover layer, copper seed layer, metal level, barrier layer, block of metal packed layer and other conductive features, surface, connecting line, track etc.In one embodiment of the invention, the electroless plating chamber need not electrode (for example anode/cathode), and is to use surface-active reactive chemicals.In another enforcement, the vacuum transport module can only be connected with the controlled chamber of heat.In some cases, when operating the vacuum transport module in the pressure at about 200-400torr, can connect the higher chamber of pressure.
Also illustrate and be set to the inert environments control system 273 that is coupled with transport module.In one embodiment, this inert environments control system 273 comprises metering and controls from pump, meter, controller and the valve of the oxygen of transport module extraction.The cleanroom facilities (not shown) also can with inert environments control system 273 coupling, thereby can with in the inert gas suction transmission chamber to replace before by the occupied space of oxygen.Supervision removes oxygen and the pump of importing the inert gas in the transmission chamber, thereby in operating process, can keep suitable environment setting.In some example, pump also must move from processing module, removing oxygen, thereby can in transport module and processing module, all keep inert environments.On the other hand, for example N can monitored and regulate to meter, Artificial Control and/or computer control
2, Ar, He, Ne, Kr, Xe etc. the pumping process of inert gas flow.
For also being for the controlled controlled environment module of inert gas, the temperature of transport module and processing module will change according to the type of the treatment process of carrying out.Yet in order to demonstrate, laboratory environment controlled transfer module 104c and wet type substrate processing station 202 can move in the temperature between about 15 degrees centigrade and about 30 degrees centigrade.In addition, go back the humidity in may command controlled transfer module 104c and the substrate wet processed station 202, and can this humidity be controlled between about 0% and 20%.
Controlled environment transport module 104a (the for example transport module shown in Fig. 2 A 232) can move under the pressure between about 500T and the about 800T, and temperature can be between about 15 degrees centigrade and about 30 degrees centigrade.But, provide and plating process, dried wet processed technology, the supercritical CO that advances to do thereby can control this temperature
2The compatibility of operation etc., this can be a processing module 240.In one embodiment, the temperature of transport module is set to the laboratory environment temperature, and processing module provides local temperature control.In another embodiment, the temperature of may command transport module is to keep environment consistent when wafer is changed between processing module and transport module.
The system diagram of Fig. 2 B has been explained compound mode, illustrates the control at the interface of substrate between various controlled environments in addition.And, be to be understood that each transport module with and the compound mode of the different sub module that is used to handle that receives many kinds are arranged, in order to be easy to explanation, the exemplary process module that connects with varying environment controlled processing module only is provided.
Fig. 2 C illustrates the exemplary configurations like the contiguous operating desk of discussing with reference to figure 2A 204.Contiguous operating desk 204 is included in the upside of substrate 105 and the proximity heads 260a on the downside.Substrate 105 will be by 207 carryings of carriage that can move along track 203, such as Fig. 2 A definition.Between the surface of proximity heads 260a and the surface of substrate 105 (and surface of carriage 207), allow to form meniscus 242.
As stated, control meniscus 240 through giving proximity heads 260a supply fluid and removing fluid through vacuum with controlled method.Alternatively, can gas surface tension gradient reducer (reducer) be offered proximity heads 260a, thereby reduce the surface tension between meniscus 242 and the substrate 105.The tension gradient reducer that is used for proximity heads 260a allows meniscus 242 to move on the surface of substrate 105 with the speed (therefore increasing throughput) that increases.The example of gas tension reducer can be the isopropyl alcohol (IPA/N that is mixed with nitrogen
2).Another example of gas tension reducing agent can be carbon dioxide (CO
2).Also can use the gas of other types, as long as this gas does not disturb the required processing of particular surface of substrate 105.
Provide Fig. 2 D-1 to 2D-6 with the controlled environment wet processed mould centre of expressing the wet treatment system 202 to be combined in Fig. 2 A or Fig. 2 A 240 not isostructure in any.Although these concrete strength is provided, be to be understood that other structure also can be included in this system.
Fig. 2 D-1 illustrates the example of a upper surface of proximity heads 260a processing substrate 105 when brush 290 is handled the lower surface of substrate 105.Can in wet treatment system 202, carry out this treatment process, and the surface of this treatment process with cleaning or etch substrate 105 can be set.
Fig. 2 D-2 provides an example, wherein end brush 290 and top brush 290 two surfaces being configured to handle substrate 105.Employed brush can be polyvinyl alcohol (PVA) brush that can liquid be supplied with the surface of substrate 105 in rotation simultaneously.The liquid that is provided by brush 290 can be supplied through brush (TTB) core, and can be used for cleaning and/or etching according to this liquid of the application, and/or substrate surface is set is hydrophobic or hydrophilic.
Fig. 2 D-3 illustrates an example, can be coating systems with the processing module 240 that the controlled environment transport module 232 shown in Fig. 2 A is connected wherein.This coating system can be set to the electroless plating system or the electroplating system that need contact with wafer.The structure of a coating machinery 260b can have many forms, and the kind of using according to performed coating, and the concrete form of coating machinery head will change.The applying cladding process result is on substrate 105 surfaces, to stay by plating surface 292.This is plated the surface and can be created in and make moment and need be plated in copper sedimentary deposit or other metal level on the substrate surface.
Fig. 2 D-4 illustrates another example of coating system, wherein two surfaces that coating machinery head is used to plate substrate 105.In this example, a coating machinery 260b is used as actual coating machinery head while another coating machinery 260b and is used as the Aided Machine head.The Aided Machine head will provide the definition anode-cathode to connect required electrical connection, in order at substrate surface metal plated material.
Fig. 2 D-5 illustrates another example of a machinery 260c who can be used for wet treatment system 202.Wet treatment system 202 can be included in and form one or more Newtonian fluids on the surface of substrate 105.A non-newtonian fluid example is the soft condensed state matter that is in solid and liquid two ends intermediateness.Condensed state matter externally under the pressure easy deformation soft, and the example of soft condensed state matter comprises emulsion, gel, colloid, foam etc.It should be understood that emulsion is the immiscible mixtures of liquids, for example toothpaste, dip, oil-in-water etc.Colloid is the dispersion of polymer in water, and gelatin is an example of colloid.Foam is made up of the bubble that in fluid matrix, forms, and shaving cream is a kind of example of types of foams.In this example, non-newtonian fluid 294 is illustrated as by a machinery 260c and applies.
Another material in the wet type chamber of controlled environment module is a tri-state body.Tri-state body comprises a part of gas, a part of solid and a part of liquid.
In addition, a machinery 260c also can combine to be used to provide delivery outlet and the input port together with the combination Newtonian fluid of non-newtonian fluid.
Fig. 2 D-6 illustrates the substrate 105 by roller 296 clampings.Roller 296 makes substrate move with the mode of rotating, and a machinery 260c is used for non-newtonian fluid (for example class A foam A material) is applied to substrate surface with controlled way.Can to the machinery head non-newtonian fluid be provided by controlled way, and remove non-newtonian fluid, thereby make substrate surface clean by the machinery head.In another embodiment, non-newtonian fluid can apply and makes it on substrate surface, keep a period of time through a machinery 260c, and wherein nozzle can be used for spraying substrate surface and uses roller rotation substrate simultaneously.The another example that does not provide figure to release can comprise SRD (centrifugal (spin) cleaning is also dry) module and other wet type commonly used or dry treatment system.When all these modules are connected with transport module, be maintained under the controlled environment, and dried wafer is written into this module, and after accomplishing processing, shift out from module.
According to one embodiment of present invention, Fig. 3 illustrates an exemplary flow from A to D.The flow process 300 of Fig. 3 will be combined in the illustrative preparation of selected lip-deep CoWBP (the cobalt tungsten boron phosphide) overlapping operation that exposes copper product and describe.In Fig. 4, treatment process illustrates two executable potential technological processes: one has preferred result, and one has not preferred result.
When carrying out CoW (BP) covering process, formulate the electrolytics preparation and carry out selective deposition on the copper to be provided at exposing of contiguous dielectric top.Before electroless plating, confirm wafer surface and various interface prior to electroless plating through process upstream.Normally chemico-mechanical polishing of process upstream (CMP) and back-CMP cleaning process.Under both of these case, through passivation Cu surface (utilizing BTA usually) and form the Cu-BTA composition and control electrochemical effect (galvanic effects) and corrosion.
In Fig. 4, the accompanying drawing upper left illustrates the result's of the clean operation that comprises copper characteristic and CMP and/or produce Cu-BTA compound 302 dielectric substance.Before coating, this metal organic mixture must be removed, otherwise plating process will be suppressed.In addition, dielectric surface must be no copper and oxide thereof, and the copper surface must no Cu oxide.In an operating procedure, the substrate that has Cu-BTA compound 302 through wet type precleaning operational processes is to remove the Cu-BTA compound on the dielectric surface.
Illustrate this operation in the operation A among Fig. 3 and Fig. 4.In a concrete example, can be that the clean cpd of tetramethyl ammonium chloride (TAMH) is used for removing basically all Cu-BTA compounds 302.TAMH describes as just an example, and should be understood that, also can use other compound according to the layer of treating in pre-clean step, to remove.In one embodiment, the cleaning module of the part through laboratory environment controlled transfer module 104c and executable operations A.If use the precleaning operation in operation A to fail from surface removal Cu-BTA compound 302, this method will be passed in path B, C and the D shown in Fig. 4 top.
The operation B, C, the D that are passed in Fig. 4 top will make covering copper tungsten coating on the whole surface of substrate, substrate comprise the dielectric portion of the target of a part and non-selective coating (deposition).So, one embodiment of the present of invention will be explained the benefit of using controlled ambient system to handle operation A, B, C and D shown in row under Fig. 4.
In operation B, thereby under the oxygen environment, carry out downstream TCP operation oxidation and remove any residual organic pollution; In this step also with any copper that exposes of oxidation.At the lip-deep cupric oxide residue 304 of copper with residual, as the operation B shown in.Yet if do not carried out wet type precleaning, the cupric oxide residue will not only remain in the copper cash over top so, and it also remains on the upper surface of dielectric material, as this example flow process is desired.
Operation B preferably with a plasma module that vacuum transport module 104b is connected in carry out, and the next one operates in another plasma module that is connected with vacuum transport module 104b and carries out.In this example, carry out ensuing downstream TCP H
2Operation, thus the restoring operation of copper caused, as by shown in the layer 306.The latter half of Fig. 4 illustrates preferred flow, wherein only reduces cupric oxide residue above copper cash.The row of going up of Fig. 4 illustrates copper residue on the reduction insulating barrier.Alternatively, can use high temperature oxygen heat treatment is high temperature (150 to 400 degree) hydrogen and executable operations B and C then.
In case executable operations B and C can produce conversion between operation C and D, as shown in Figure 3.This conversion makes it possible to pass load lock from the vacuum transport module and changes substrate over to the inert environments controlled environment.It is basic anaerobic that the inert atmosphere controlled environment is designed to, the over oxidation of the substrate before this will prevent in the module that is connected in inert gas controlled environment shown in Figure 3, to handle.
In operation D, can carry out selectivity CoW covering coating above the copper characteristic and can above unwanted zone, not form CoW coating now, shown in the first half of Fig. 4 (operation D).Since the autocatalysis surface characteristic of copper can be only at selectivity coating CoW on the copper zone but not on the cleaning medium layer, selectivity coating CoW is able to summary on copper.This example has been explained in the mode that exposes deposition CoW coating on the copper characteristic, but in the combining architecture that can under controlled environment, transmit or handle, possibly carried out more preparation manipulation.
Fig. 5 illustrates flow chart 500, and this flow chart has defined modules configured and the control of the substrate in the module in combining architecture, thereby the transfer between disparate modules is carried out in controlled ambient.As stated, be different from the prior art module, defined system is control and treatment chamber and the interior environment of transport module all the time, thereby interface (i.e. layer, characteristic etc.) keep controlled and stable from a process sequences to next process sequences.As do not have controlled environment, even within the stand-by period of minimum, also possibly almost degrade or change immediately at prepared interface, like the situation of prior art systems.
Method operation in Fig. 5 starts from confirming that the operation 502 of layer to be prepared in controlled environment or characteristic begins to carry out.In one embodiment, can prepare certain layer, for example the monoblock of barrier layer, lining, inculating crystal layer or copper deposition.In another embodiment, only prepare some characteristic, the characteristic of for example in the general selectivity coating operation of using plating and electroless plating system to realize, accomplishing.In case in operation 502, confirmed after layer or the characteristic, this method operation moves to operation 504, and module is connected with selected environmental treatment station in this operation 504.For example, this module is those modules that are connected with the different transport modules of Fig. 2 B.
In operation 504, in case suitably module is with after combining architecture is connected, this method operation moves to operation 506, in this operation 506, has defined the substrate that is used to move around with the method for making in each environmental treatment station processing.This method for making will depend on the required result of processing, yet the consistent features of translate substrate is in each handles station, to control environment particularly to handle with the optimum of guaranteeing layer, characteristic or treatment process back and forth.Then, this method moves to operation 508, in this operation 508, supplies with substrate and is used to handle layer or the characteristic through confirming.
Substrate can be possibly also not have the semiconductor wafer of the certain layer of preparation above that form or previous above that.In this handled station, the substrate that in operation 508, provides changed laboratory environment controlled transfer there module 510 over to.Thereby alternative this laboratory environment controlled transfer module 510 of control provides inert environments.For example, this inert environments can provide hypoxemia or oxygen-free environment.
In addition, low-oxygen environment will help maybe with arbitrary module in the wet processed module of laboratory environment controlled transfer module interconnects in substrate or its surface are not exposed oxygen supply when handling.Therefore, so place definition, " laboratory environment " will be constructed to comprise that two control environment through definition inert environments type, wherein this environment of vacuum-pumping and be full of this environment with inert gas subsequently.In laboratory environment controlled transfer module or connected module, carry out in the processing procedure, this environment is found time to remove oxygen or to remove institute's aerobic basically.
Now, this method moves to operation 512, in this operation, in one or more and module that laboratory environment controlled transfer module is connected, carries out wet processed.Alternatively, some process sequences possibly not need wet processed before vacuumizing processing.As above defined various wet processed operation can comprise that proximity heads meniscus management, SRD handle, wipe the brush processing and comprise any other type of process of using liquid (Newtonian fluid and non-newtonian fluid).
Now, in operation 514, treatment process moves to judging point to confirm that in dry process technology, handling substrate still moves on to the layer formation step of carrying out at inert environments.In this example, suppose to forward Cement Composite Treated by Plasma to, allow so to shift in operation 516.In operation 516, transfer possibly carried out in the vacuum transport module.The transfer of wet processed to vacuum transport module is: dried wafer transmits and imports into the vacuum transport module in wet processed.
In these shifted, load lock and valve can move wafer at intermodule.In operation 518, can in one or more and module that the vacuum transport module is connected, carry out plasma processing operation.As stated, can carry out dissimilar plasma operations according to the unify type of chamber of the plasma based that is connected with transport module.In this, in operation 520, determine whether under laboratory environment, to carry out layer and form processing, perhaps whether should wafer be retracted wet-cleaning or Wet-type etching operation.
When needs carried out wet-cleaning or Wet-type etching operation, this method can go back to and carry out the operation 510 of passing transport module and getting into the transfer of laboratory environment controlled transfer there module in it.When needs are carried out the layer formation under the inert environments, this method will be transferred to operation 522.In operation 522, make conversion in the controlled environment transport module, carry out.In the controlled environment transport module, substrate can move into multiple inert environments layer and form one of module.It is the module that is connected with the controlled environment transport module that the inert environments layer forms module.
The example that forms module at the controlled environment layer can be the coating module that adopts electroless plating technology or electroplating technology.Except that electrodeposited coating and electroless plating, also can substrate be moved into permission substrate is carried out the dried module of advancing to do processing.The dried example that advances to do processing can comprise the proximity heads processing that meniscus is applied to wafer surface.Therefore, in case the inert environments layer forms when carrying out processing in the module in operation 524, in step 526, just can carry out decision operation.
In step 526, confirm that needing extra changing in the vacuum transport module 516 still is to return the laboratory environment controlled transfer module of entering in 510.In case between the controlled various transport modules of environmental properties, produce some transmission, and finish according to using required layer or characteristic coating, this method stops operation so.Certainly, the termination of this method possibly only indicate the beginning of next manufacturing process order.
Though in the method operation of technology 500, mention and make certain layer, specific interface or characteristic, be to be understood that in order to make IC-components and possibly repeatedly repeat various layers, treatment process and manufacturing step.Afterwards, but packaging integrated circuit devices and being placed on possibly be used in electronic equipment, handling, stores, transmits, in the electronic component of demonstration or data delivery.
Fig. 6-11 is provided at the direct copper-plated exemplary embodiment in top, barrier layer, and this embodiment can carry out in the environment of basic anaerobic shown in Figure 2.Fig. 6 explains according to one embodiment of present invention, the rough schematic view of each layer of substrate that is used to handle.Layer 600 is arranged on substrate 602 tops.Be to be understood that layer 600 is interlayer dielectric (ILD).
Fig. 7 graphic extension has the layer 600 of etch features in it.This characteristic can be a kind of in contact, through hole, groove or other space that in semi-conducting material, forms, so the subsequent metal spraying plating provides the interconnection with other device.In some technologies of for example dual damascene etching process, use a succession of through hole etching and ditch trench etch before metallising, in dielectric layer, to define a characteristic.In one embodiment, through known etch process technology etched voids 604 in layer 600.For example, plasma etching can be used in layer 600, form hole 604.Plasma etching can be in the indoor execution of the plasma chamber in the composite module of Fig. 2, and this plasma chamber operates in the controlled environment under the vacuum condition.It should be noted that the commutative use of term space and characteristic.
Fig. 8 is the rough schematic view of the conformal barrier on the exposed surface in the graphic extension exposed surface and the space 604 that are deposited over substrate.According to one embodiment of present invention, through well known deposition techniques deposition conformal barrier 606.For example, this deposition can be carried out in the controlled environment module of combining architecture shown in Figure 2.That is, any module 240a-240d can be used for through the well known deposition techniques deposited barrier layer.Be to be understood that barrier layer 606 can be made by the heterocomplex (hybrid combination) of tantalum nitride (TaN), tantalum (Ta), ruthenium (Ru) or these materials.Although these materials are materials of considering usually, also can use other barrier material.Barrier material can be other refractory metal compound, and it comprises but is not limited to, especially titanium (Ti), tungsten (W), zirconium (Zr), hafnium (Hf), molybdenum (Mo), niobium (Nb), vanadium (V), ruthenium (Ru), iridium (Ir), platinum (Pt) and chromium (Cr) one of them.
Fig. 9 is the rough schematic view that graphic extension is deposited over second conforma layer on the barrier layer 606.According to one embodiment of present invention, layer 608 is tantalum layers.Be to be understood that tantalum nitride (TaN) has acceptable adherence for interlevel dielectric layer 600.Yet tantalum nitride does not adhere to copper that is used to fill space 604 subsequently and tantalum layer.Promptly deposit substituting of two barrier layers as Fig. 9, can handle tantalum nitride layer 606 so that the contiguous surface that is used to fill the copper in space 604 has abundant tantalum.In one embodiment, the individual layer of deposition functional layer or self-organizing above the barrier layer.
Be to be understood that can through the deposition module sedimentary deposit 606 on the controlled environment treatment system that is defined in Fig. 2 and 608 both.In Figure 10, in groove, carry out the copper calking after executing planarization process, to prepare copper cash 610.Graphic extension copper cash 610 is in the barrier layer that is limited at interlayer dielectric 600 608 and 606.Should be appreciated that in Fig. 9 carry out the copper calking, and then planarization step obtains line shown in figure 10 with the leveling upper surface afterwards.In one embodiment, carry out in the controlled environment wet processed module that planarization process defines in Fig. 2.
Shown in Fig. 6-11, under the situation that need not the PCVD inculating crystal layer, carry out the copper Gap filling technology.Because the controlled ambient that in Fig. 1, defines can be eliminated the PVD inculating crystal layer can directly on the barrier layer, carry out the copper Gap filling technology.Therefore, in one embodiment, can the directly place of deposition of tantalum execution copper calking above tantalum nitride barrier layer on barrier layer 608.In another embodiment, can be directly on barrier layer 606, carry out the copper calking, wherein barrier layer 606 is by rich tantalumization, thereby the copper calking will suitably adhere to.
Figure 11 flow chart according to an embodiment of the invention, this block diagram illustration have been explained the method that directly on the barrier layer, deposits sealant and need not to prepare the PVD inculating crystal layer.This method starts from operating procedure 700, the etching space.The lithographic technique of any known can be adopted in this space.In one embodiment, come the etching space, make substrate be in the controlled environment atmosphere according to the system model described in Fig. 1 and 2.
So this method is carried out operating procedure 702 deposited barrier layer in groove.With regard to Fig. 7 to 10 described, this barrier layer can be tantalum nitride layer or is the material layer that stops electron transfer conversion phenomena noted earlier of any appropriate.Should be appreciated that in the defined system of Fig. 1 and 2 in order to deposit coating, substrate will be transferred to the controlled environment atmosphere zone from the controlled environment region of no pressure.In one embodiment, the deposition on barrier layer can be for depositing one deck tantalum nitride layer and then deposition one deck tantalum layer earlier.In another embodiment, also can deposit one deck tantalum nitride layer earlier, then with this layer as rich tantalumization recited above.In any case, for Gap filling technology limits the tantalum enriched layer, stick on the barrier layer suitably to guarantee copper.
Then, shown in operating procedure 704, sealant carries out in the place that copper directly is deposited in groove on the barrier layer.As previously mentioned, these technologies need not the PVD inculating crystal layer in the barrier layer.That is to say that copper can directly be filled on the barrier layer under the situation of inculating crystal layer not having.So shown in operating procedure 706, but the cover layer of leveling sealant comes for interlevel dielectric layer smooth upper surface to be provided.
Control system and the electronic equipment of managing this combining structure module, automation etc. can be by computer controlled automatic.So aspects more of the present invention can be used for other system configuration, comprise the electronic product, microcomputer, mainframe computer of hand portable equipment, microprocessor system, little processing or programmable-consumer etc.The present invention also can be used for DCE, wherein can be executed the task by network medium-long range treatment facility.
Among the described in front embodiment, should be appreciated that the present invention may use multiple computer realization operations such as comprising in the computer system storage.The physical operations of this action need physical quantity is handled.Usually, though there is no need, can these physical quantitys be stored, transmit, make up, relatively reach other operation with the form of the signal of telecommunication or magnetic signal.And these operations of execution are commonly considered as clear and definite, for example produce, discern, determine or compare.
Any operation described herein can be used as a part of the present invention, all is useful for machine operation.The present invention also can relate to a kind of these apparatus operating of execution or device.This device possibly be for certain essential purpose specially constructs, bearer network for example described above.Perhaps, this installs also a kind of general calculation machine, can calculation procedure activates selectively or disposes through installing within it.Especially, various general-purpose machinerys can adopt the computer program that writes according to instruction to operate, and perhaps, construct a more specific device and carry out action required facility more.
The present invention can be embodied as the computer-readable code on the computer readable media.This computer readable media is the arbitrary data memory device, and it can store data, and therefore these data also can read through computing system.The instance of computer readable media comprises hard disk drive, network attached storage (NAS), read-only memory, random asccess memory, CD-ROM, CD-R, CD-RW, DVD, Flash, tape and other optics and non-optical data storage device.This computer readable media also can be along with computer system be distributed through network, so computer readable data can be stored and carried out in distributed form.
Although described the present invention through several embodiment, those skilled in the art also will understand through read above-mentioned specification and analyze that accompanying drawing can be recognized various modifications, augments, replacement and equivalent thereof.Therefore, mean that this type of revises, augments, replaces and fall into the equivalent in true spirit of the present invention and the scope to the present invention includes all.In claim, member with or step do not hint any specific operation order, only if clearly statement in claim.
Claims (31)
1. combining architecture that is used to handle substrate comprises:
Laboratory environment controlled transfer module with one or more substrate wet processed module couplings; Said laboratory environment controlled transfer module and said one or more substrate wet processed module are set managing first surrounding environment, and utilize with the dried end effector that advances to do the sequential processes substrate and activate and these one or more substrate wet processed module interfaces;
Vacuum transport module with said laboratory environment controlled transfer module and the coupling of one or more plasma treatment module is provided with said vacuum transport module and said one or more plasma treatment module to manage second surrounding environment; With
Controlled environment transport module with said vacuum transport module and the coupling of one or more environmental treatment module is provided with said controlled environment module and said one or more environmental treatment module to manage the 3rd surrounding environment;
Wherein said combining architecture can controllably be handled said substrate under said first, second or the 3rd surrounding environment, wherein this first, second separate with the 3rd surrounding environment and this combining architecture uncontrolled clean room environment outward.
2. combining architecture as claimed in claim 1, wherein said the 3rd surrounding environment are the inert environments of basic anaerobic.
3. combining architecture as claimed in claim 1, wherein said first surrounding environment are the inert environments of basic anaerobic.
4. combining architecture as claimed in claim 1, wherein said second surrounding environment can be set in vacuo.
5. combining architecture as claimed in claim 1, the outside uncontrolled clean room environment isolation of wherein said first, second and the 3rd environment and said combining architecture.
6. combining architecture as claimed in claim 1, wherein said one or more environmental treatment modules comprise coat of metal system.
7. combining architecture as claimed in claim 6, wherein said coat of metal system comprises electroplates and the electroless plating system.
8. combining architecture as claimed in claim 1 further comprises
First load lock that can connect said laboratory environment controlled transfer module and said vacuum transport module; With
Second load lock that can connect said vacuum transport module and said controlled environment transport module.
9. combining architecture as claimed in claim 1, wherein the interface with said one or more substrate wet processed modules activates by handling the dried end effector that advances to do substrate in the order.
10. combining architecture as claimed in claim 9, wherein the proximity heads system is a substrate wet processed module.
11. combining architecture as claimed in claim 9, wherein non-newtonian fluid is used in one of said substrate wet processed module.
12. combining architecture as claimed in claim 1 is wherein wiped the brush system and is used for substrate wet processed module.
13. combining architecture as claimed in claim 1, wherein said laboratory environment controlled transfer module is used for substrate is moved into and shifts out the track of said one or more substrate wet processed modules and the stretching module of end effector forms by having.
14. a combining architecture that is used to handle substrate comprises:
Laboratory environment controlled transfer module with one or more substrate wet processed module couplings is provided with said laboratory environment controlled transfer module and said one or more substrate wet processed module to manage first surrounding environment;
Vacuum transport module with said laboratory environment controlled transfer module and the coupling of one or more plasma treatment module is provided with said vacuum transport module and said one or more plasma treatment module to manage second surrounding environment; With with the controlled environment transport module of said vacuum transport module and one or more environmental treatment module coupling, said controlled environment module and said one or more environmental treatment module are set to manage the 3rd surrounding environment;
Wherein said combining architecture can controllably be handled said substrate under said first, second or the 3rd surrounding environment; Wherein said first, second separated by groove valve and load lock with the 3rd surrounding environment; When providing said substrate to change through said load lock; Said groove valve limits the isolation between said surrounding environment; Wherein under the situation of the external oxygen environment that said substrate is not exposed to said combining architecture, can carry out dry plasma process and wet processed in said combining architecture inside.
15. a method that is used for handling at combining architecture substrate comprises:
Configuration laboratory environment transport module is to connect one or more wet processed modules, and each of wherein said transport module and said one or more wet processed modules moved under first surrounding environment;
Configuration vacuum transport module is to connect one or more plasma treatment modules, and each of wherein said vacuum transport module and said one or more plasma treatment modules moved under second surrounding environment;
Configuration controlled environment transport module is to connect one or more coating modules, and each of wherein said controlled environment transport module and said one or more coating modules operated under the 3rd surrounding environment; And
Can in said combining architecture, between said first, second and the 3rd surrounding environment, change under the situation that does not contact outside uncontrolled environment.
16. the method that is used in combining architecture, handling substrate as claimed in claim 15 further comprises:
A kind of method for making that is used to control the conversion between said first, second and the 3rd surrounding environment is set, and when this method for making definition is carried out and is handled at concrete one of said wet processed module, said plasma treatment module and said coating module.
17., said first surrounding environment wherein is set so that the pressure that has is higher than the pressure in the outside clean room of said combining architecture like the described method that is used in combining architecture, handling substrate of said claim 15.
18. like the described method that is used in combining architecture, handling substrate of said claim 15, wherein said first surrounding environment is the environment that is full of the anaerobic or the basic anaerobic of inert gas.
19. like the described method that is used in combining architecture, handling substrate of said claim 15, wherein said second surrounding environment remains in the plasma process vacuum.
20. like the described method that is used in combining architecture, handling substrate of said claim 19, wherein said the 3rd surrounding environment is the environment that is full of the anaerobic or the basic anaerobic of inert gas.
21. like the described method that is used in combining architecture, handling substrate of said claim 20; Wherein after plasma processing operation, can substrate be transferred to said controlled environment transport module in order to electroless plating from said vacuum transport module, and said substrate not introduced oxygen after said plasma processing operation.
22. like the described method that is used in combining architecture, handling substrate of said claim 20; Wherein control the each conversion of said substrate between said laboratory environment transport module, vacuum transport module, controlled environment transport module, and said substrate is not exposed to the uncontrolled environment in the clean room of the outside of said combining architecture.
23. like the described method that is used in combining architecture, handling substrate of said claim 15; Wherein at least one said wet processed module operation is to form meniscus above said substrate surface; Said meniscus is set above said substrate surface, forming and to move, can be dried advance and do processing thereby make advancing and go out said wet processed module.
24. like the described method that is used in combining architecture, handling substrate of said claim 15, wherein at least one said wet processed module operation is to form non-newtonian fluid above said substrate surface.
25. like the described method that is used in combining architecture handling substrate of said claim 15, wherein said controlled environment transport module also moves said substrate driedly advances to do processing.
26. one kind is used to handle the substrate combination architecture, comprises:
Laboratory environment controlled transfer module with one or more substrate wet processed module couplings is provided with said laboratory environment controlled module and said one or more substrate wet processed module to manage first surrounding environment;
End effector in this laboratory environment controlled transfer module, this end effector moves along rectilinear orbit, and this end effector shifts out this one or more substrate wet processed modules with the wafer shift-in of dried state;
Vacuum transport module with said laboratory environment controlled transfer module and the coupling of one or more plasma treatment module; Said vacuum transport module and said one or more plasma treatment module are set to manage second surrounding environment, this end effector leads to this vacuum transport module with the butt sheet from this laboratory environment controlled transfer module; With
Controlled environment transport module with said vacuum transport module and the coupling of one or more environmental treatment module is provided with said controlled environment module and said one or more environmental treatment module can be configured to the inert environments of basic anaerobic with management the 3rd surrounding environment;
Wherein said combining architecture can be in said first, second or the 3rd surrounding environment the said substrate of controlled processing; And in operating process, be provided with said first, second with the 3rd environment to isolate with the outside uncontrolled clean room environment of said combining architecture.
27. combining architecture as claimed in claim 26, wherein said first surrounding environment are the inert environments of basic anaerobic.
28. combining architecture as claimed in claim 26, wherein said one or more environmental treatment modules comprise coat of metal system.
29. combining architecture as claimed in claim 28, wherein said coat of metal system comprises electroplating system and electroless plating system.
30. combining architecture as claimed in claim 26 further comprises:
First load lock that can connect said laboratory environment controlled transfer module and said vacuum transport module; With
Second load lock that can connect said vacuum transport module and said controlled environment transport module.
31. combining architecture as claimed in claim 26 further comprises,
Be used to control the computer that move and move into, shift out the processing module that be connected in separately that said surrounding environment of said substrate between said first, second and the 3rd surrounding environment.
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| US11/513,634 US8771804B2 (en) | 2005-08-31 | 2006-08-30 | Processes and systems for engineering a copper surface for selective metal deposition |
| US11/611,758 | 2006-12-15 | ||
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| US11/611,758 US20080057182A1 (en) | 2006-08-30 | 2006-12-15 | Method for gap fill in controlled ambient system |
| US11/639,752 US9117860B2 (en) | 2006-08-30 | 2006-12-15 | Controlled ambient system for interface engineering |
| PCT/US2007/018924 WO2008027386A2 (en) | 2006-08-30 | 2007-08-28 | Controlled ambient system for interface engineering |
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| SG174750A1 (en) * | 2006-08-30 | 2011-10-28 | Lam Res Corp | Controlled ambient system for interface engineering |
| US9865501B2 (en) * | 2013-03-06 | 2018-01-09 | Lam Research Corporation | Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer |
| TWI584370B (en) * | 2013-08-27 | 2017-05-21 | Tokyo Electron Ltd | A substrate processing method, a substrate processing apparatus, and a memory medium |
| CN109216267A (en) | 2014-12-23 | 2019-01-15 | 英特尔公司 | Decouple via hole filling |
| US10249521B2 (en) * | 2016-03-17 | 2019-04-02 | Lam Research Ag | Wet-dry integrated wafer processing system |
| US10443146B2 (en) | 2017-03-30 | 2019-10-15 | Lam Research Corporation | Monitoring surface oxide on seed layers during electroplating |
| US10770314B2 (en) * | 2017-05-31 | 2020-09-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device, tool, and method of manufacturing |
| JP6538894B2 (en) * | 2018-01-10 | 2019-07-03 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | How to bond substrates together |
| JP2019192892A (en) | 2018-04-18 | 2019-10-31 | 東京エレクトロン株式会社 | Processing system and processing method |
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| CN102347210A (en) | 2012-02-08 |
| SG174750A1 (en) | 2011-10-28 |
| TWI447831B (en) | 2014-08-01 |
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| JP5417174B2 (en) | 2014-02-12 |
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| WO2008027386A2 (en) | 2008-03-06 |
| KR20140002811A (en) | 2014-01-08 |
| CN101529556A (en) | 2009-09-09 |
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