CN101527331A - Preparing method of diamond thin-film field-effect photo-electric detector - Google Patents
Preparing method of diamond thin-film field-effect photo-electric detector Download PDFInfo
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- CN101527331A CN101527331A CN200910048331A CN200910048331A CN101527331A CN 101527331 A CN101527331 A CN 101527331A CN 200910048331 A CN200910048331 A CN 200910048331A CN 200910048331 A CN200910048331 A CN 200910048331A CN 101527331 A CN101527331 A CN 101527331A
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Abstract
The invention relates to a preparing method based on a P-type nanometer diamond thin film/(100) directed diamond thin-film field-effect photo-electric detector, which belongs to the technical field of the production technology of field-effect photo-electric detectors. The invention is characterized in that the Schottky field-effect structure is used, and the P-type nanometer diamond thin film is used as the surface P-type ditch layer. The P type of the nanometer diamond thin film is not obtained by being mixed with other elements but etching the hydrogen ions and other ions to obtain the H-terminal P-type nanometer diamond layer. The invention has another characteristic that the traditional silicon-substrate technology is not used, thereby being beneficial to the application of the detector in high-temperature, high-frequency and high-power fields and bad environments.
Description
Technical field
The present invention relates to a kind of preparation method, belong to the field-effect photo-electric detector manufacturing process technology field based on p type nano-diamond film/[100] oriented diamond film field-effect photo-electric detector.
Background technology
21 century, photoelectron technology will play more and more important effect in advanced information society, and the integrated and photoelectron integrated technology of photon is had higher requirement to the power of device, frequency, working temperature etc.Traditional Si and GaAs semi-conducting material be for the reason of self structure and characteristic, more and more shows its deficiency and limitation at aspects such as high temperature, high frequency, high-power and radioresistances.The energy gap of silicon is less, and therefore the device by the silicon materials manufacturing can not be operated in the environment that is higher than 150 ℃, can't satisfy the requirement of severe rugged environments such as the high irradiation intensity high temperature of photodetection of new generation field high flux.Though the GaAs device can obtain excellent high frequency characteristics,, can't realize high power work because the disruptive field intensity and the thermal conductivity of material are low.In today of scientific and technical develop rapidly, growing field such as space flight, aviation, military affairs, oil exploration, nuclear energy, communication etc. need to bear high temperature has superperformance again simultaneously at aspects such as high-frequency high-power, anti-irradiation material for detector urgently.
Research in this respect at present mainly concentrates on wide bandgap semiconductor materials such as SiC, GaN and diamond.Because the restriction of material itself, can't solve heat dissipation problem well based on the device of SiC or GaN material.Combination property from these materials, diamond is a kind of material for detector that integrates multiple premium properties: its lattice has strong capability of resistance to radiation, even under the irradiation of heavy dose of high energy particle in conjunction with firmly, its lattice mismatch is also very little, has quite low irradiation damage; Energy gap is big, has high resistivity under the normal temperature, and intrinsic carrier concentration is very low, therefore its leakage current is quite low, and thermal noise is little, and device can be at steady operation under the high temperature environment, and need not form p-n junction and add reverse biased and suppress leakage current, panel detector structure is simple; Dielectric coefficient is little, the signal to noise ratio height, and noise current can not increase yet under strong irradiation; Carrier mobility height, its charge collection time fast 4 times than Si detector.All these good characteristics (low irradiation damage, fast charge collection time, high signal to noise ratio) and the highest hardness, fabulous mechanical performance, chemical stability, frequency stability and good excellent properties such as temperature stability, diamond is become a kind ofly desirable can effectively work under the high temperature, can high-speed response, material for detector that anti-irradiation ability is strong.Along with constantly improving with p type doping techniques ground of chemical vapor deposition (CVD) synthesis of diamond film method broken through, make people utilize adamantine hope to be achieved on a large scale in recent years, promoted the research and development of diamond thin film detector greatly.In photoelectron technology, has extremely important application prospect based on the ultrahigh speed of diamond thin, high-power and radioresistance detector.
The performance of diamond thin film detector depends on quality of diamond film to a great extent, the diamond thin film detector of developing the in the world polycrystalline diamond films that adopt based on silicon substrate more, yet because the existence of surface roughness and crystal boundary, device performance (time response velocity fails, sensitivity etc.) is severely limited.Because diamond hardness is very big, handle very difficulty by means such as machinery, chemical polishings, cost is relatively too high, has limited the research of diamond thin film detector and application on a large scale.Find in research that in the world compare with other orientation diamond thin, [100] oriented diamond film has best surface smoothness, just can realize smooth even nano level surface roughness by control growing technology to diamond thin.Shortcomings such as [100] oriented diamond film has best performance, and the polycrystalline diamond films crystal boundary that helps to overcome arbitrary orientation is mixed and disorderly, defective is many, rough surface, uniformity are bad.Simultaneously, the nano-diamond film smooth surface is smooth, and coefficient of friction is little, and its defective, crystal boundary yardstick and surface roughness are far below conventional diamond thin, do not need follow-up polishing technology just can increase substantially the fineness of diamond thin, help reducing preparation cost.
In addition, the field effect photistor can be realized the hypervelocity optical detection, and the response time can reach tens ps, is expected to be used widely in photoelectricity is integrated.Adopt field-effect transistor structure to prepare the performance that detector is expected to improve effectively detector.Because diamond n type doping techniques is not also broken through, all diamond based field-effect transistors of report are p type boron (B) doped channel device or the non-doped with hydrogen of p type (H) terminal end surface channel device at present.Because the boron acceptor activation energy is bigger, even at high temperature can not activate fully, cause B doped channel field-effect transistor to have less drain current and mutual conductance, and cause big reverse leakage current again when under high temperature, big voltage, working, be unfavorable for device work.But, under not doping situation, the CVD diamond surface is handled by hydrogen plasma can obtain hydrogen (H) terminal p type surface conduction channel, successfully made H terminal end surface slot field-effect transistor at present, the manufacture craft of this H terminal end surface channel device is very simple, do not need doping, oxidation and passivation layer deposition process, cost of manufacture is starkly lower than p type B doped diamond base field-effect transistor.
At the progress situation that does not break through at present monocrystalline diamond film technology of preparing and P type doping techniques as yet, we have proposed to prepare field-effect photo-electric detector, be expected to further improve the performance of diamond thin film detector based on Nano diamond/[100] oriented diamond film.
Summary of the invention
The purpose of this invention is to provide a kind of preparation method based on P type nano-diamond film/[100] oriented diamond film field-effect photo-electric detector.
Main points of the present invention are: adopted the Schottky fet structure, and utilized p type nano-diamond film as surface p type channel layer.The p type of nano-diamond film is not to obtain by mixing, but adopts the method for hydrogen plasma etching to obtain H terminal P type Nano diamond layer.
The preparation method of a kind of diamond thin-film field-effect photo-electric detector of the present invention is characterized in that having following technical process and step:
A. silicon substrate preliminary treatment: adopt (100) mirror finish silicon chip as deposition substrate.Adopt HF acid ultrasonic cleaning 5～15 minutes, to remove the silicon oxide layer on surface.In order to increase the nucleation density of diamond thin, the bortz powder foot couple silicon substrate mechanical lapping of use 100nm particle diameter 10～15 minutes; With the ultrasonic cleaning 10～20 minutes in the acetone soln that is mixed with the 100nm bortz powder of the silicon slice placed after grinding; Again silicon chip is used deionized water and acetone ultrasonic cleaning respectively at last, until the silicon chip surface cleaning; The reative cell of putting into microwave plasma CVD (MPCVD) device after the oven dry is for further processing;
B. diamond thin nucleation process: with vacuum pump reative cell is evacuated to 5～7Pa earlier, with molecular pump reative cell is evacuated to 10 then
-2Below the Pa, feed reacting gas (mist of methane and hydrogen), the flow of regulating methane and hydrogen is respectively 40～60 standard ml/min and 120～160 standard ml/min; The air pressure of reative cell is set at 0.5～1.0kPa; Substrate bias is set at 50～150V; Underlayer temperature is controlled at 620～680 ℃; Microwave power is set at 1200W～1600W; Film nucleation time 0.5～1 hour;
C. diamond film growth process: after above-mentioned nucleation process was finished, the flow of regulating methane and hydrogen was respectively 40～60 standard ml/min and 150～200 standard ml/min; The air pressure of reative cell is set at 4～5kPa; Underlayer temperature is controlled at 700～750 ℃; Microwave power is set at 1600W～2000W; 60～100 hours film growth time, thickness reaches 80～100 μ m;
D. nano-diamond film preparation process: with vacuum pump described reative cell is evacuated to 5～7Pa earlier, with molecular pump reative cell is evacuated to 10 then
-2Below the Pa, feed the mist of reacting gas namely for methane and hydrogen, the flow of regulating methane and hydrogen is respectively 40～60 standard ml/min and 120～160 standard ml/min; The air pressure of reative cell is set at 0.5～1.0kPa; Substrate bias is set at 50～150V; Underlayer temperature is controlled at 620～680 ℃; Microwave power is set at 1200～1600W; The film growth time is 3～5 hours, and thickness reaches 8～10 μ m;
E. the removal process of silicon substrate: the good diamond thin of will growing is put into HNO
3+ HF (HNO
3: soak 6-8h in mixed solution HF=1: 3, mol ratio), silicon substrate is eroded fully;
F. nano-diamond film/[100] oriented diamond film p type processing procedure: nanometer/[100] oriented diamond film of above-mentioned gained is put into the MPCVD reative cell.With vacuum pump reative cell is evacuated to 5～7Pa, with molecular pump reative cell is evacuated to 10 then
-2Below the Pa, feed hydrogen, regulate flow 120～160 standard ml/min of hydrogen; The air pressure of reative cell is set at 2～3 kPa; Microwave power is set at 1200～1600W; In 1～3 hour processing time, make the diamond thin carrier concentration reach 10
13～10
14Cm
-3
G. the preparation of Source drain Ohmic contacts layer and grid schottky contact layer:
(a) preparation of grid schottky contact layer: above-mentioned p type nano-diamond film/[100] oriented diamond film is put on the sample stage of magnetic control sputtering device, carried out the preparation of grid schottky contact layer; Adopting sputtering target material is the Al target; With vacuum pump sputtering chamber is evacuated to below the 5Pa earlier, with molecular pump the survey chamber of penetrating is evacuated to 10 then
-2Below the Pa; Feed argon gas, regulating flow is 30～60 standard ml/min; Conditioned reaction air pressure is 0.2～0.5Pa; Sputtering power 100～500W; Sputtering time 0.5 hour～2 hours, gate reaches 50～100nm, and grid width is 100～300 μ m, and grid length is 1～5 μ m;
The preparation of (b) leak, the source ohmic contact being touched layer: adopt under method same as described above, the same process parameter condition leak, the preparation of source ohmic contact layer; The sputtering target material that is adopted is the Au target; Source, drain electrode thickness reach 200～300nm.
The principle of the Schottky thermal barrier field effect transistor (MESFET) that adopts among the present invention is as described below: junction field effect transistor (JFET) is to come width to the grid space charge region by adding grid voltage, thus a kind of fieldtron of control raceway groove conductive capability.In normal working conditions, reverse biased is added on the both sides of grid p-n junction, makes space charge region (depletion layer) to the raceway groove internal extended, and makes the carrier depletion in the depletion layer.The sectional area of raceway groove is reduced as a result, thereby the channel resistance increase, and the electric current that flows through between this source and the leakage just is subjected to the modulation of grid voltage.JFET has been widely used in small signal amplifier, demand limiter, voltage control resistor, switching circuit and the integrated circuit.If with the grid p-n junction potential barrier among the contact berrier between metal and semiconductor (Schottky barrier) the replacement JFET, just made Schottky barrier field effect transistor (MESFET), its principle is similar to JFET, that is: reverse biased is added on the both sides of grid schottky junction, make the Schottky barrier district to the raceway groove internal extended, and make carrier depletion in the barrier region, and the sectional area of raceway groove reduces, and channel resistance increases.By width to grid junction voltage control gate knot, with change conducting channel width, thus the control output leakage current, under a certain high reverse bias, raceway groove finally can be by pinch off.The mutual conductance height of this field effect transistor, operating frequency height are microwave headman's popular devices.
Relevant hydrogen terminal diamond thin conductivity principle is as described below in this: diamond film surface is handled by the hydrogen ion body can obtain hydrogen (H) terminal p type surface conduction channel, this raceway groove is equivalent to the two-dimensional hole gas (2DHG) that an activation energy is lower than 23meV, and successfully has been made into hydrogen terminal end surface channel fet device.At present, mainly there are two viewpoints in electrical conduction mechanism at hydrogen terminal diamond film surface: the one, think in the hydrogen plasma processing procedure, hydrogen atom not only can saturated diamond surface dangling bonds, also can spread the subsurface layer of certain depth, the hydrogen atom of subsurface layer has brought out the shallow acceptor energy level; Second kind of viewpoint is to propose recently, thinks that the surface adsorption hydrogen atom is that the necessary condition film of diamond thin high conductivity also will be exposed in the air adsorption activity molecule, bioactive molecule and hydrogen terminal diamond surface realization electron exchange.At present also exist more dispute in hydrogen terminal diamond thin conductivity principle method.
Characteristics of the present invention also are to have adopted the Schottky fet structure.
Take the Schottky fet structure to prepare detector and can improve detector performance effectively, as time response velocity fails, sensitivity etc.Because the restriction of sedimentary condition in use must keep substrate (as silicon materials) to improve mechanical strength, the diamond thin film detector of developing in the world at present is many based on silicon substrate.Yet the existence of silicon has limited the application of detector in high temperature, high frequency, high-power field and adverse circumstances.The present invention removes silicon substrate, thereby has solved this problem well.In addition, on [100] oriented diamond film, continue deposition one deck nanometer layer, do not need follow-up polishing technology just can increase substantially the fineness of diamond thin, simplified technology, reduced preparation cost.
The contrast of the present invention and other diamond thin film detectors is that following significant advantage is arranged:
(1) the present invention adopts the schottky barrier field effect transistor structure to prepare detector, can realize high-speed inspection, and time response is fast, and is highly sensitive.
(2) the present invention has adopted and has removed silicon substrate, helps the application of detector in high temperature, high frequency, high-power field and adverse circumstances.
(3) utilization of the present invention [100] oriented diamond film, and continue deposition one deck nanometer layer, further improve fineness, simplify preparation technology, reduce cost.This helps promoting the large-scale application of diamond thin film detector.
Description of drawings
Fig. 1 is p type nano-diamond film of the present invention/[100] oriented diamond film trnasistor detector structural representation.
Fig. 2 is the exemplary block diagram of traditional silicon substrate Schottky barrier field effect transistor (MESFET) in the past.
Embodiment
After now specific embodiments of the invention being described in.
Embodiment: the technical process and the step of present embodiment are as follows:
(1) silicon substrate preliminary treatment: adopt (100) mirror finish silicon chip as deposition substrate.Adopt HF acid ultrasonic cleaning 10 minutes, to remove the silicon oxide layer on surface.In order to increase the nucleation density of diamond thin, the bortz powder foot couple silicon substrate mechanical lapping of use 100nm particle diameter 10 minutes.With the ultrasonic cleaning 10 minutes in the acetone soln that is mixed with the 100nm bortz powder of the silicon chip after grinding.Again silicon chip is used deionized water and acetone ultrasonic cleaning respectively at last,, put into the reative cell of microwave plasma CVD (MPCVD) device after the oven dry until the silicon chip surface cleaning.
(2) diamond thin nucleation process: with vacuum pump reative cell is evacuated to 5Pa earlier, with molecular pump reative cell is evacuated to 5 * 10 then
-3Below the Pa, feed reacting gas (mist of methane and hydrogen), the flow of regulating methane and hydrogen is respectively 50 standard ml/min and 160 standard ml/min; The air pressure of reative cell is set at 1kPa; Substrate bias is set at 100V; Underlayer temperature is controlled at 660 ℃; Microwave power is set at 1500W; Film nucleation time 0.5 hour.
(3) diamond film growth process: after nucleation was finished, the flow of regulating methane and hydrogen was respectively 50 standard ml/min and 200 standard ml/min; The air pressure of reative cell is set at 5kPa; Underlayer temperature is controlled at 720 ℃; Microwave power is set at 1800W; 80 hours film growth time, thickness reaches 100 μ m.
(4) nano-diamond film preparation process: with vacuum pump reative cell is evacuated to 5Pa earlier, with molecular pump reative cell is evacuated to 5 * 10 then
-3Below the Pa, feed reacting gas (mist of methane and hydrogen), the flow of regulating methane and hydrogen is respectively 50 standard ml/min and 160 standard ml/min; The air pressure of reative cell is set at 1kPa; Substrate bias is set at 100V; Underlayer temperature is controlled at 660 ℃; Microwave power is set at 1500W; The film growth time is 4 hours, and thickness reaches 10 μ m.
(5) the removal process of silicon substrate: the good diamond thin of will growing is put into HNO
3+ HF (HNO
3: soak 8h in mixed solution HF=1: 3, mol ratio), silicon substrate gets final product after eroding fully.
(6) Nano diamond/[100] oriented diamond film p type processing procedure: nanometer/[100] oriented diamond film is put into the MPCVD reative cell.With vacuum pump reative cell is evacuated to 5Pa, with molecular pump reative cell is evacuated to 5 * 10 then
-3Below the Pa, feed hydrogen, regulate the flow 150 standard ml/min of hydrogen; The air pressure of reative cell is set at the 3KPa microwave power and is set at 1600W; 1.5 hours processing times.Utilize the Hall test macro to record the diamond thin carrier concentration and reach 10
14Cm
-3
(7) preparation of Source drain Ohmic contacts layer and grid schottky contact layer: nanometer/[100] oriented diamond film is put on the sample stage of magnetic control sputtering device, carried out the preparation of grid schottky contact layer, sputtering target material is the Al target.Earlier sputtering chamber is evacuated to 5Pa, with molecular pump reative cell is evacuated to 5 * 10 then with vacuum pump
-3Below the Pa.Feed argon gas, regulating flow is 50 standard ml/min; Conditioned reaction air pressure is 0.3Pa; Sputtering power 200W; Sputtering time 0.5 hour, Al gate electrode thickness is 100nm, grid width is 200 μ m, the long 2 μ m of grid.Under identical sputtering condition, sputtering time 1.5 hours carries out the preparation of Source drain Ohmic contacts layer, and sputtering target material is the Au target, and Au source-drain electrode thickness is 300nm.
Carry out performance test by Nano diamond/[100] oriented diamond film field-effect photo-electric detector to above preparation, the result shows that this detector (200nm-800nm) in visible-range has good spectral response, its time response speed reaches 350ps, compares with the diamond thin film detector of other structure to be significantly improved.Do not having under the situation of illumination, when grid voltage is-1V, the source leak be pressed in-during 5V, the drain current of detector is 0.5 μ A.Under 200nm illumination, when grid voltage is-1V, the source leak be pressed in-during 5V, the drain current of detector reaches 4 μ A.
The structure of P type nano-diamond film of the present invention/[100] oriented diamond film field-effect photo-electric detector reaches the structure of traditional in the past silicon substrate diamond film field-effect detector referring to the Fig. 1 in the accompanying drawing and Fig. 2.
Claims (1)
1. the preparation method of a diamond thin-film field-effect photo-electric detector is characterized in that having following technical process and step:
A. silicon substrate preliminary treatment: adopt (100) mirror finish silicon chip as deposition substrate, adopt HF acid ultrasonic cleaning 5～15 minutes, to remove the silicon oxide layer on surface, in order to increase the nucleation density of diamond thin, the bortz powder foot couple silicon substrate mechanical lapping of use 100nm particle diameter 10～15 minutes; With the ultrasonic cleaning 10～20 minutes in the acetone soln that is mixed with the 100nm bortz powder of the silicon slice placed after grinding; Again silicon chip is used deionized water and acetone ultrasonic cleaning respectively at last, until the silicon chip surface cleaning; The reative cell of putting into microwave plasma CVD (MPCVD) device after the oven dry is for further processing;
B. diamond thin nucleation process: with vacuum pump reative cell is evacuated to 5～7Pa earlier, with molecular pump reative cell is evacuated to 10 then
-2Below the Pa, feed reacting gas (mist of methane and hydrogen), the flow of regulating methane and hydrogen is respectively 40～60 standard ml/min and 120～160 standard ml/min; The air pressure of reative cell is set at 0.5～1.0kPa; Substrate bias is set at 50～150V; Underlayer temperature is controlled at 620～680 ℃; Microwave power is set at 1200W～1600W; Film nucleation time 0.5～1 hour;
C. diamond film growth process: after above-mentioned nucleation process was finished, the flow of regulating methane and hydrogen was respectively 40～60 standard ml/min and 150～200 standard ml/min; The air pressure of reative cell is set at 4～5kPa; Underlayer temperature is controlled at 700～750 ℃; Microwave power is set at 1600W～2000W; 60～100 hours film growth time, thickness reaches 80～100 μ m;
D. nano-diamond film preparation process: with vacuum pump described reative cell is evacuated to 5～7Pa earlier, with molecular pump reative cell is evacuated to 10 then
-2Below the Pa, feed the mist of reacting gas namely for methane and hydrogen, the flow of regulating methane and hydrogen is respectively 40～60 standard ml/min and 120～160 standard ml/min; The air pressure of reative cell is set at 0.5～1.0kPa; Substrate bias is set at 50～150V; Underlayer temperature is controlled at 620～680 ℃; Microwave power is set at 1200～1600W; The film growth time is 3～5 hours, and thickness reaches 8～10 μ m;
E. the removal process of silicon substrate: the good diamond thin of will growing is put into HNO
3+ HF (HNO
3: soak 6-8h in mixed solution HF=1: 3, mol ratio), silicon substrate is eroded fully;
F. nano-diamond film/[100] oriented diamond film p type processing procedure: nanometer/[100] oriented diamond film of above-mentioned gained is put into the MPCVD reative cell.With vacuum pump reative cell is evacuated to 5～7Pa, with molecular pump reative cell is evacuated to 10 then
-2Below the Pa, feed hydrogen, regulate flow 120～160 standard ml/min of hydrogen; The air pressure of reative cell is set at 2～3kPa; Microwave power is set at 1200～1600W; In 1～3 hour processing time, make the diamond thin carrier concentration reach 10
13～10
14Cm
-3
G. the preparation of Source drain Ohmic contacts layer and grid schottky contact layer:
(a) preparation of grid schottky contact layer: above-mentioned p type nano-diamond film/[100] oriented diamond film is put on the sample stage of magnetic control sputtering device, carried out the preparation of grid schottky contact layer; Adopting sputtering target material is the A1 target; With vacuum pump sputtering chamber is evacuated to below the 5Pa earlier, with molecular pump the survey chamber of penetrating is evacuated to 10 then
-2Below the Pa; Feed argon gas, regulating flow is 30～60 standard ml/min; Conditioned reaction air pressure is 0.2～0.5Pa; Sputtering power 100～500W; Sputtering time 0.5 hour～2 hours, gate reaches 50～100nm, and grid width is 100～300 μ m, and grid length is 1～5 μ m;
The preparation of (b) leak, the source ohmic contact being touched layer: adopt under method same as described above, the same process parameter condition leak, the preparation of source ohmic contact layer; The sputtering target material that is adopted is the Au target; Source, drain electrode thickness reach 200～300nm.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339740A (en) * | 2010-07-15 | 2012-02-01 | 旺宏电子股份有限公司 | Gate structure of semiconductor device, semiconductor device and manufacturing method thereof |
| CN102403209A (en) * | 2011-11-10 | 2012-04-04 | 上海大学 | Preparation method for ohmic contact electrode based on diamond film field effect transistor |
| CN103336296A (en) * | 2013-05-31 | 2013-10-02 | 上海大学 | Neutron detector |
| CN104659109A (en) * | 2015-03-20 | 2015-05-27 | 京东方科技集团股份有限公司 | Thin film transistor and manufacturing method thereof as well as array substrate |
| CN105609412A (en) * | 2016-03-23 | 2016-05-25 | 云南大学 | Rapid annealing preparation method of Al-Si<+> ohmic contact electrode |
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2009
- 2009-03-26 CN CN200910048331A patent/CN101527331A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339740A (en) * | 2010-07-15 | 2012-02-01 | 旺宏电子股份有限公司 | Gate structure of semiconductor device, semiconductor device and manufacturing method thereof |
| CN102339740B (en) * | 2010-07-15 | 2014-06-18 | 旺宏电子股份有限公司 | Gate structure of semiconductor device, semiconductor device and manufacturing method thereof |
| CN102403209A (en) * | 2011-11-10 | 2012-04-04 | 上海大学 | Preparation method for ohmic contact electrode based on diamond film field effect transistor |
| CN102403209B (en) * | 2011-11-10 | 2013-04-03 | 上海大学 | Preparation method for ohmic contact electrode based on diamond film field effect transistor |
| CN103336296A (en) * | 2013-05-31 | 2013-10-02 | 上海大学 | Neutron detector |
| CN104659109A (en) * | 2015-03-20 | 2015-05-27 | 京东方科技集团股份有限公司 | Thin film transistor and manufacturing method thereof as well as array substrate |
| WO2016150277A1 (en) * | 2015-03-20 | 2016-09-29 | 京东方科技集团股份有限公司 | Thin-film transistor, manufacturing method thereof and array substrate |
| CN104659109B (en) * | 2015-03-20 | 2017-07-14 | 京东方科技集团股份有限公司 | A kind of thin film transistor (TFT) and preparation method thereof, array base palte |
| US10084095B2 (en) | 2015-03-20 | 2018-09-25 | Boe Technology Group Co., Ltd. | Thin film transistor, method for manufacturing the same, and array substrate |
| CN105609412A (en) * | 2016-03-23 | 2016-05-25 | 云南大学 | Rapid annealing preparation method of Al-Si<+> ohmic contact electrode |
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