CN101527268A - Packaging structure for video sensor and manufacturing method thereof - Google Patents
Packaging structure for video sensor and manufacturing method thereof Download PDFInfo
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- CN101527268A CN101527268A CN 200810008024 CN200810008024A CN101527268A CN 101527268 A CN101527268 A CN 101527268A CN 200810008024 CN200810008024 CN 200810008024 CN 200810008024 A CN200810008024 A CN 200810008024A CN 101527268 A CN101527268 A CN 101527268A
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- circuit board
- connection gasket
- encapsulating structure
- image sensor
- glass circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
- H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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Abstract
The invention relates to a manufacturing method for a packaging structure of a video sensor. The packaging structure comprises a glass circuit board and a sensing wafer. The glass circuit board is provided with a plurality of first connecting pads; and the sensing wafer is provided with a plurality of second connecting pads. The manufacturing method for the packaging structure of the video sensor comprises the following steps: aligning the glass circuit board and the sensing wafer so as to make the second connecting pads and the first connecting pads correspondingly arranged; forming a non-conductive resin between the glass circuit board and the sensing wafer; and carrying out the laser welding on the first connecting pads and the second connecting pads so as to make the first connecting pads and the second connecting pads electrically connected. The invention also discloses the packaging structure for the video sensor.
Description
Technical field
The present invention relates to a kind of encapsulating structure and manufacture method thereof, particularly relate to a kind of encapsulating structure and manufacture method thereof of image sensor.
Background technology
Along with development of science and technology, Duo individualized portable electronic product more and more, for example digital still camera, numerical digit video camera, mobile phone and personal digital assistant etc. all can use image sensor, for photography or recording image.In recent years, (Chip-On-Glass, encapsulation technology COG) encapsulates the trial of the encapsulating structure of image sensor with glass flip chip.
Please refer to shown in Figure 1ly, a kind of existing encapsulating structure 1 of the image sensor of glass flip chip technology that utilizes comprises a glass circuit board 11, a sensing wafer 12 and a marine glue 13.Have a plurality of first connection gaskets 111 on the glass circuit board 11.Have a plurality of second connection gaskets 121 and a plurality of conductive projection 122 on the sensing wafer 12, conductive projection 122 is arranged on second connection gasket 121.Second connection gasket 121 and conductive projection 122 corresponding first connection gaskets 111 are provided with, and link by hot press (thermalcompression or hot press).
In addition, marine glue 13 no cure shrinkage so can't provide stronger strength of connection after curing, also can't shorten the distance between sensing wafer 12 and the glass circuit board 11.Yet in the prior art, the someone utilizes non-conductive adhesive, and (Non-Conductive Adhesive, good solidification shrinkage NCA) is used as the usefulness of sticking together.But only utilize the strength that non-conductive adhesive solidifies after-contraction that the conductive projection 122 and first connection gasket 111 are linked, probably have the problem that conductivity is not good and reliability is not enough, and then reduce the yield of the encapsulating structure 1 of image sensor.
Therefore, how a kind of encapsulating structure and manufacture method thereof of image sensor are provided, can use non-conductive adhesive, and guarantee the conductivity of the two in conjunction with sensing wafer and glass circuit board, and then promote overall construction intensity and yield, real is one of current important topic.
Because the defective that the encapsulating structure of above-mentioned existing image sensor exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of encapsulating structure and manufacture method thereof of novel image sensor, can improve the encapsulating structure of general existing image sensor, make it have more practicality.Through constantly research, design, and, create the present invention who has practical value finally through after studying sample and improvement repeatedly.
Summary of the invention
The objective of the invention is to, overcome the defective of the encapsulating structure existence of existing image sensor, and provide a kind of encapsulating structure and manufacture method thereof of novel image sensor, technical problem to be solved is to make it can use non-conductive adhesive in conjunction with sensing wafer and glass circuit board, and guarantee conductivity between the two, thereby be suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.The manufacture method of the encapsulating structure of a kind of image sensor that proposes according to the present invention, this encapsulating structure comprises a glass circuit board and a sensing wafer, this glass circuit board has a plurality of first connection gaskets, this sensing wafer has a plurality of second connection gaskets, this manufacture method may further comprise the steps: this glass circuit board of contraposition and this sensing wafer make the corresponding setting of described second connection gasket and described first connection gasket; Between this glass circuit board and this sensing wafer, form a non-conductive adhesive; And described first connection gasket and described second connection gasket carried out laser welding, described first connection gasket and described second connection gasket are electrically connected.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The manufacture method of the encapsulating structure of aforesaid image sensor, wherein said non-conductive adhesive are a non-conductive adhesive paste, and this manufacture method also comprises: this non-conductive adhesive paste of precuring.
The manufacture method of the encapsulating structure of aforesaid image sensor, wherein said non-conductive adhesive are a non-conductive glued membrane.
The manufacture method of the encapsulating structure of aforesaid image sensor, wherein said non-conductive adhesive is provided with an exhaust outlet, and this manufacture method also comprises: bleed via this exhaust outlet.
The manufacture method of the encapsulating structure of aforesaid image sensor wherein also comprises after having bled: end the body envelope by an envelope and end this exhaust outlet.
The manufacture method of the encapsulating structure of aforesaid image sensor, wherein said glass circuit board have more at least one protruding dam, and this non-conductive adhesive is formed at outside this protruding dam, make between this protruding dam, this sensing wafer and this glass circuit board to have a gap.
It is relative with this glass circuit board and establish that the manufacture method of the encapsulating structure of aforesaid image sensor, wherein said sensing wafer have a sensing area, and this manufacture method also comprises: a printing opacity glue is set between this sensing area and this glass circuit board.
The manufacture method of the encapsulating structure of aforesaid image sensor, wherein said laser welding with a laser beam to this glass circuit board, described first connection gasket, described second connection gasket and be present in described first connection gasket and described second connection gasket between this non-conductive adhesive this carry out laser welding.
The manufacture method of the encapsulating structure of aforesaid image sensor, it also comprises: forming a conductive projection on each described first connection gasket or on each described second connection gasket.
The manufacture method of the encapsulating structure of aforesaid image sensor, it also comprises: this glass circuit board and a circuit board are electrically connected.
The object of the invention to solve the technical problems also realizes by the following technical solutions.The encapsulating structure of a kind of image sensor that proposes according to the present invention, comprising: a glass circuit board has a plurality of first connection gaskets; One sensing wafer has a plurality of second connection gaskets, described second connection gasket and the corresponding setting of described first connection gasket; And a non-conductive adhesive, being arranged between this glass circuit board and this sensing wafer, described first connection gasket and described second connection gasket electrically connect described first connection gasket and described second connection gasket through laser welding.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The encapsulating structure of aforesaid image sensor, wherein said sensing wafer are a charge coupled cell or a complementary metal oxide semiconductor element.
The encapsulating structure of aforesaid image sensor, wherein said non-conductive adhesive are a non-conductive adhesive paste or a non-conductive glued membrane.
The encapsulating structure of aforesaid image sensor, wherein said glass circuit board have more at least one protruding dam, and this non-conductive adhesive is arranged at outside this protruding dam, make between this protruding dam, this sensing wafer and this glass circuit board to have a gap.
It is relative with this glass circuit board and establish that the encapsulating structure of aforesaid image sensor, wherein said sensing wafer have a sensing area, and this encapsulating structure also comprises: a printing opacity glue is arranged between this sensing area and this glass circuit.
The encapsulating structure of aforesaid image sensor wherein saidly also comprises: a plurality of conductive projections are arranged at each described first connection gasket or each described second connection gasket respectively.
The encapsulating structure of aforesaid image sensor, wherein said laser welding penetrates this glass circuit board with laser beam and shines described first connection gasket, described conductive projection and described second connection gasket.
The encapsulating structure of aforesaid image sensor, it also comprises: a circuit board is arranged on this glass circuit board.
The present invention compared with prior art has tangible advantage and beneficial effect.As known from the above, in order to achieve the above object, the invention provides a kind of manufacture method of encapsulating structure of image sensor, encapsulating structure comprises a glass circuit board and a sensing wafer, glass circuit board has a plurality of first connection gaskets, and sensing wafer has a plurality of second connection gaskets.The manufacture method of the encapsulating structure of image sensor may further comprise the steps: contraposition glass circuit board and sensing wafer make the corresponding setting of described second connection gasket and described first connection gasket; Between glass circuit board and sensing wafer, form a non-conductive adhesive; And described first connection gasket and described second connection gasket carried out laser welding, described first connection gasket and described second connection gasket are electrically connected.
For reaching above-mentioned purpose, the encapsulating structure of complying with a kind of image sensor of the present invention comprises a glass circuit board, a sensing wafer and a non-conductive adhesive.Glass circuit board has a plurality of first connection gaskets.Sensing wafer has a plurality of second connection gaskets and the corresponding setting of described first connection gasket.Non-conductive adhesive is arranged between glass circuit board and the sensing wafer, and described first connection gasket and described second connection gasket electrically connect described first connection gasket and described second connection gasket through laser welding.
By technique scheme, the encapsulating structure of image sensor of the present invention and manufacture method thereof have following advantage at least:
From the above, encapsulating structure and manufacture method thereof according to a kind of image sensor of the present invention are provided with non-conductive adhesive between glass circuit board and sensing wafer, by the cure shrinkage of non-conductive adhesive, can promote overall construction intensity and yield and shorten sensing wafer and the spacing of glass circuit board.In addition, shine described first connection gasket and described second connection gasket, make win connection gasket and the electric connection of second connection gasket, and then can guarantee conductivity and reliability between first connection gasket and second connection gasket by laser welding.In addition, because the non-conductive adhesive light-permeable, so can be arranged between the sensing area and glass circuit board of sensing wafer, and then promote whole structural strength and yield.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is a kind of schematic diagram of encapsulating structure of existing image sensor;
Fig. 2 A to Fig. 2 D is the manufacturing flow chart of encapsulating structure of the image sensor of first embodiment of the invention;
Fig. 3 is the flow chart of manufacture method of encapsulating structure of the image sensor of first embodiment of the invention;
Fig. 4 uses non-schematic diagram of leading glued membrane for the encapsulating structure of the image sensor of first embodiment of the invention;
Fig. 5 A to Fig. 5 C is the manufacturing flow chart of encapsulating structure of the image sensor of second embodiment of the invention;
Fig. 6 is the schematic diagram of the glass circuit board that encapsulating structure had of Fig. 5 A;
Fig. 7 A to Fig. 7 D is the manufacturing flow chart of encapsulating structure of the image sensor of third embodiment of the invention; And
Fig. 8 is the schematic diagram of the glass circuit board that encapsulating structure had of Fig. 7 A.
1,2,2 ', 3,3 ', 4,4 ': the encapsulating structure of image sensor
11,21,31,41: glass circuit board
111,211,311,411: the first connection gaskets
12,22,32,42: sensing wafer
121,221,321,421: the second connection gaskets
122,212,312,412: conductive projection
123,222,322,422: sensing area
13,44: marine glue
213: patterned conductive layer
23,23 ', 33,43: non-conductive adhesive
24: electronic component
314,414: protruding dam
O, O ': exhaust outlet
S: surface
S01～S03: step of manufacturing
Embodiment
Hereinafter with reference to correlative type, encapsulating structure and manufacture method thereof according to the image sensor of preferred embodiment of the present invention are described, wherein components identical will be illustrated with identical reference marks.
First embodiment
Please refer to Fig. 2 A to Fig. 2 D and Fig. 3, with the encapsulating structure 2 and the manufacture method thereof of image sensor that first embodiment of the invention is described simultaneously.Wherein, the manufacture method of the encapsulating structure 2 of image sensor comprises that mainly step S01 is to step S03.
Before the explanation manufacture method, earlier the member to encapsulating structure 2 that non-conductive adhesive is not set ' had explains slightly.Shown in Fig. 2 A, encapsulating structure 2 ' comprise a glass circuit board 21 and a sensing wafer 22.Glass circuit board 21 has the surperficial S that a plurality of first connection gasket, 211, the first connection gaskets 211 are arranged at glass circuit board 21.Sensing wafer 22 has a plurality of second connection gaskets 221.In addition, sensing wafer 22 has more a sensing area 222.Sensing wafer 22 can be charge coupled cell (chargecoupled device, CCD) or the complementary metal oxide semiconductor element (complementarymetal-oxide semiconductor, CMOS).
What deserves to be explained is, glass circuit board 21 more can have a plurality of conductive projections 212 and be arranged at first connection gasket 211, and conductive projection 212 is by being arranged at sensing wafer 22 sides in the general prior art, be arranged on the glass circuit board 21 instead, more can save because the processing procedure cost of conductive projection 212 yield problem and the sensing wafer 22 wasted when making (the processing procedure cost of glass circuit board 21 than the one-tenth of sensing wafer 22 is original must be low).Certainly, conductive projection 212 also can be formed by sensing wafer 22 sides, and promptly a plurality of conductive projections 212 can be arranged at described second connection gasket 221.
The manufacture method of the encapsulating structure 2 of present embodiment image sensor below is described.
Shown in Fig. 2 A, step S01 is contraposition glass circuit board 21 and sensing wafer 22, makes described second connection gasket 221 and described first connection gasket, 211 corresponding settings, for example second connection gasket 221 is coincided with described first connection gasket 211.In this step, can carry out contraposition by a contraposition board.
Shown in Fig. 2 B, step S02 forms a non-conductive adhesive 23 between glass circuit board 21 and sensing wafer 22.In the present embodiment, non-conductive adhesive 23 is that (Non-ConductivePaste NCP), can be formed at the surperficial S of glass circuit board 21 by a glue mode (dispensing), even filling is between glass circuit board 21 and sensing wafer 22 for a non-conductive adhesive paste.In this, be to use side point glue and non-conductive adhesive 23 is arranged at glass circuit board 21.
Afterwards, utilize the mode of heating or irradiation to solidify non-conductive adhesive 23.After the curing, non-conductive adhesive 23 can produce convergent force and the distance of further second connection gasket 221 and conductive projection 212, and shortens the spacing of sensing wafer 22 and glass circuit board 21.
Shown in Fig. 2 C, step S03 electrically connects described first connection gasket 211 and described second connection gasket 221 for described first connection gasket 211 and described second connection gasket 221 are carried out laser welding (laser welding).Because the evenness and the thickness difference of layers of material, and the height of conductive projection 212 variation, all may cause between second connection gasket 221 of some conductive projection 212 and corresponding setting is not fluid-tight engagement, so that the non-conductive adhesive 23 of part is present between the conductive projection 212 and second connection gasket 221, so can penetrate glass circuit board 21 with an external laser beam respectively at each contact by laser welding, and shine first connection gasket 211, conductive projection 212, the non-conductive adhesive 23 and second connection gasket 221 make sensing wafer 22 be able to electrically connect with glass circuit board 21.
In addition, because the irradiation of laser light, might make second connection gasket 221 and conductive projection 212 by the laser hot melt, make conductive projection 212 and 221 weldings of second connection gasket, and then make sensing wafer 22 and glass circuit board 21 electrically connect, can guarantee the electric reliability of the encapsulating structure 2 of image sensor.In addition, the non-conductive adhesive 23 of present embodiment is the printing opacity glue of light-permeable, and filling is between glass circuit board 21 and sensing wafer 22, but the bond strength between reinforcing glass circuit board 21 and the sensing wafer 22, and promote the reliability of the encapsulating structure 2 of image sensor.Moreover, because non-conductive adhesive 23 has light transmission, can not cover the light that enters sensing wafer 22 yet.
Please refer to shown in Fig. 2 D, glass circuit board 21 has more a patterned conductive layer 213, and patterned conductive layer 213 can electrically connect with other electronic components 24, and electronic component 24 for example is a circuit board.Electronic component 24 and patterned conductive layer 213 can by the surface engagement technology (Surface MountTechnology, SMT), tin ball or anisotropic conductive and link.
In the present invention, the order of step S01 and step S02 is also replaceable.If when forming earlier non-conductive adhesive 23 and carrying out the contraposition step again, non-conductive adhesive 23 can be by printing, for example be screen printing (screen printing) or coating and be formed at surperficial S, and non-conductive adhesive 23 covers first connection gasket 211 and conductive projections 212.In addition, in this case,, can utilize heating or irradiation earlier, make non-conductive adhesive paste precuring (pre-cured),, make things convenient for successive process, for example the operation of contraposition to reduce the flowability of non-conductive adhesive 23 forming non-conductive adhesive 23 behind surperficial S.Certainly, whether must implement pre-cure step, can accept or reject it according to process requirement.
In addition, as shown in Figure 4, non-conductive adhesive 23 ' also can be a non-conductive glued membrane (Non-ConductiveFilm, NCF), at this moment, can be by laminating type with the surperficial S of non-conductive adhesive 23 ' be arranged at.
Second embodiment
Please refer to Fig. 5 A to Fig. 5 C and shown in Figure 6, with the encapsulating structure 3 and the manufacture method thereof of image sensor of explanation second embodiment of the invention.
Shown in Fig. 5 A, the encapsulating structure 3 before the not laser welding of image sensor ' comprise a glass circuit board 31 and a sensing wafer 32.Glass circuit board 31 has a plurality of first connection gaskets 311, a plurality of conductive projection 312 and a protruding dam (dam) 314.First connection gasket 311 is arranged at a surperficial S of glass circuit board 31, and conductive projection 312 is arranged on first connection gasket 311.
Protruding dam 314 is arranged at surperficial S, and protruding dam 314 can be one-body molded with glass circuit board 31, for example by laser cutting, machine cuts, manufacture of semiconductor and moulding.Or protruding dam 314 can be an element that additionally is arranged at glass circuit board 31.In addition, protruding dam 314 can solid memder, or forms with a plurality of members.Wherein, the material on protruding dam 314 can be glass, plastic cement, metal or alloy etc.
Among Fig. 5 A, encapsulating structure a 3 ' non-conductive adhesive 33 has been set between described first connection gasket 311 and described second connection gasket 321, and cover conductive projection 312.Similarly, when non-conductive adhesive 33 is non-conductive adhesive paste, can utilize heating or irradiation earlier, make non-conductive adhesive paste precuring (pre-cured).At this, whether must implement pre-cure step, still can accept or reject it according to process requirement.Because protruding dam 314 is arranged at the inner edge of non-conductive adhesive 33, so protruding dam 314 can replace and stop that non-conductive adhesive 33 enters the zone of sensing area 322, makes between protruding dam 314, sensing wafer 32 and the glass circuit board 31 to have a gap.In the present embodiment, owing on the sensing area 322 lenticule is arranged, lenticule need change optical path by the refraction coefficient difference of itself and air-gap, so non-conductive adhesive 33 is not arranged between sensing area 322 and the glass circuit board 31.Thus, also need not consider whether light-permeable of non-conductive adhesive 33.Therefore, in the present embodiment, non-conductive adhesive 33 can use printing opacity or lighttight material.
Shown in Fig. 5 B, contraposition glass circuit board 31 and sensing wafer 32 make described second connection gasket 321 and described first connection gasket, 311 corresponding settings, for example are the setting that coincides.Certainly, contraposition step also can be carried out before forming non-conductive adhesive 33.Afterwards, utilize the mode of heating or irradiation to solidify non-conductive adhesive 33.The blockage effect that is produced after non-conductive adhesive 33 solidifies is in above-mentioned first embodiment explanation, so repeat no more.In this, the non-conductive adhesive 33 after the curing also can be used as the usefulness of marine glue; Certainly, also can form one deck marine glue again in the periphery of non-conductive adhesive 33.Shown in Fig. 5 C, carry out the laser welding step more then, first connection gasket 311, conductive projection 312 and second connection gasket 321 are electrically connected by laser welding.Because the laser welding processing procedure is in the foregoing description explanation, so repeat no more.
Fig. 6 be the image sensor of Fig. 5 A encapsulating structure 3 ', formed non-conductive adhesive 33 after, single vertical view with regard to glass circuit board 31.Non-conductive adhesive 33 covers the zone with conductive projection 312 and forms almost closed.Can influence the optical characteristics of sensing wafer 32 for fear of residuing in aqueous vapor between glass circuit board 31 and the sensing wafer 32, so protruding dam 314 has an exhaust outlet O, exhaust outlet O stretches out in order to a follow-up pump step.Certainly, non-conductive adhesive 33 also needs corresponding exhaust outlet O to leave an exhaust outlet.
After the contraposition step, the operation of bleeding is not damaged by aqueous vapor, dust and other foreign matters so that the gas between glass circuit board 31 and the sensing wafer 32 is extracted out with protection sensing wafer 32 and sensing area 322.Can an envelope end the exhaust outlet that the body envelope is ended exhaust outlet O and non-conductive adhesive 33 after exhausting gas.The material that envelope is ended body can for example be a resin.Be noted that when protruding dam 314 not during contact sensing wafer 32, protruding dam 314 can not stay exhaust outlet, and is directly bled by the exhaust outlet of non-conductive adhesive 33, envelope is ended the exhaust outlet of non-conductive adhesive 33 again.
In the present embodiment, the order of above-mentioned steps is not certain, and for example laser welding can be after pump step, and the contraposition step can be before being provided with non-conductive adhesive.
The 3rd embodiment
Please refer to Fig. 7 A to Fig. 7 D and shown in Figure 8, with the encapsulating structure 4 and the manufacture method thereof of image sensor of explanation third embodiment of the invention.
Shown in Fig. 7 A, the encapsulating structure 4 of laser welding ' a comprise glass circuit board 41 and a sensing wafer 42 not.Glass circuit board 41 has a plurality of first connection gaskets 411, a plurality of conductive projection 412 and a protruding dam 414.The position being set and changing aspect of first connection gasket 411, conductive projection 412 and protruding dam 414 illustrates in the foregoing description, so repeat no more.Sensing wafer 42 has a plurality of second connection gaskets 421 and a sensing area 422.Second connection gasket, 421 corresponding first connection gaskets 411 are provided with, and are arranged at the periphery of sensing area 422, and sensing area 422 is in the face of glass circuit board 41.
At first, form a non-conductive adhesive 43 between described first connection gasket 411 and described second connection gasket 421, and cover conductive projection 412.Different with second embodiment is that as shown in Figure 8, non-conductive adhesive 43 only is arranged near the zone the conductive projection 412, and non-conductive adhesive 43 is noncontinuity point glue.In addition, protruding dam 414 has an exhaust outlet O ' and bleeds in order to follow-up.When non-conductive adhesive 43 is non-conductive adhesive paste, can utilize heating or irradiation earlier, make non-conductive adhesive paste precuring (pre-cured).This pre-cure step can be accepted or rejected it according to process requirement.
Then, shown in Fig. 7 B, contraposition glass circuit board 41 and sensing wafer 42 make described second connection gasket 421 and described first connection gasket, 411 corresponding settings.Certainly, contraposition step also can be before non-conductive adhesive 43 forms.Afterwards, utilize the mode of heating or irradiation to solidify non-conductive adhesive 43.The blockage effect that is produced after non-conductive adhesive 43 solidifies is in the foregoing description explanation, so repeat no more.In addition, shown in Fig. 7 C, first connection gasket 411, conductive projection 412 and second connection gasket 421 are electrically connected by laser welding.The laser welding processing procedure is in the foregoing description explanation, so repeat no more.
Afterwards, the operation of bleeding is not damaged by aqueous vapor, dust and other foreign matters so that the gas between glass circuit board 41 and the sensing wafer 42 is extracted out with protection sensing wafer 42 and sensing area 422.End the exhaust outlet O ' that the body envelope is ended protruding dam 414 with an envelope after exhausting gas.
Shown in Fig. 7 D, the marine glue 44 that a ring-type is set is between the edge and sensing wafer 42 and surperficial S of sensing wafer 42.Marine glue 44 can be by filling around the sensing wafer 42, and enter between sensing wafer 42 and the surperficial S by capillarity (capillarity).The material of marine glue can be selected from non-conductive adhesive, anisotropic conductive, B rank glue material, bottom and fill material and group that combination constituted thereof.Because protruding dam 414 is arranged at the inner edge of marine glue 44, enters the zone of sensing area 422 so can stop marine glue 44.
In the present embodiment, the order of above-mentioned steps is not certain, and for example laser welding can be after pump step, or after marine glue 44 is set.
In sum, encapsulating structure and manufacture method thereof according to a kind of image sensor of the present invention, between glass circuit board and sensing wafer, non-conductive adhesive is set, by the cure shrinkage of non-conductive adhesive, can promote overall construction intensity and yield and shorten sensing wafer and the spacing of glass circuit board.In addition, shine described first connection gasket and described second connection gasket, make win connection gasket and the electric connection of second connection gasket, and then can guarantee conductivity and reliability between first connection gasket and second connection gasket by laser welding.In addition, because the non-conductive adhesive light-permeable, so can be arranged between the sensing area and glass circuit board of sensing wafer, and then promote whole structural strength and yield.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (18)
1, a kind of manufacture method of encapsulating structure of image sensor, this encapsulating structure comprises a glass circuit board and a sensing wafer, this glass circuit board has a plurality of first connection gaskets, and this sensing wafer has a plurality of second connection gaskets, it is characterized in that this manufacture method may further comprise the steps:
This glass circuit board of contraposition and this sensing wafer make the corresponding setting of described second connection gasket and described first connection gasket;
Between this glass circuit board and this sensing wafer, form a non-conductive adhesive; And
Described first connection gasket and described second connection gasket are carried out laser welding, described first connection gasket and described second connection gasket are electrically connected.
2, the manufacture method of the encapsulating structure of image sensor according to claim 1 is characterized in that described non-conductive adhesive is a non-conductive adhesive paste, and this manufacture method also comprises:
This non-conductive adhesive paste of precuring.
3, the manufacture method of the encapsulating structure of image sensor according to claim 1 is characterized in that described non-conductive adhesive is a non-conductive glued membrane.
4, the manufacture method of the encapsulating structure of image sensor according to claim 1 is characterized in that described non-conductive adhesive is provided with an exhaust outlet, and this manufacture method also comprises:
Bleed via this exhaust outlet.
5, the manufacture method of the encapsulating structure of image sensor according to claim 4 is characterized in that, also comprises after having bled:
End the body envelope by an envelope and end this exhaust outlet.
6, the manufacture method of the encapsulating structure of image sensor according to claim 1, it is characterized in that described glass circuit board has more at least one protruding dam, this non-conductive adhesive is formed at outside this protruding dam, makes between this protruding dam, this sensing wafer and this glass circuit board to have a gap.
7, the manufacture method of the encapsulating structure of image sensor according to claim 1, it is relative with this glass circuit board and establish to it is characterized in that described sensing wafer has a sensing area, and this manufacture method also comprises:
One printing opacity glue is set between this sensing area and this glass circuit board.
8, the manufacture method of the encapsulating structure of image sensor according to claim 1, it is characterized in that described laser welding with a laser beam to this glass circuit board, described first connection gasket, described second connection gasket and be present in described first connection gasket and described second connection gasket between this non-conductive adhesive this carry out laser welding.
9, the manufacture method of the encapsulating structure of image sensor according to claim 1 is characterized in that also comprising:
Forming a conductive projection on each described first connection gasket or on each described second connection gasket.
10, the manufacture method of the encapsulating structure of image sensor according to claim 1 is characterized in that also comprising:
This glass circuit board and a circuit board are electrically connected.
11, a kind of encapsulating structure of image sensor is characterized in that comprising:
One glass circuit board has a plurality of first connection gaskets;
One sensing wafer has a plurality of second connection gaskets, described second connection gasket and the corresponding setting of described first connection gasket; And
One non-conductive adhesive is arranged between this glass circuit board and this sensing wafer, and described first connection gasket and described second connection gasket electrically connect described first connection gasket and described second connection gasket through laser welding.
12, the encapsulating structure of image sensor according to claim 11 is characterized in that described sensing wafer is a charge coupled cell or a complementary metal oxide semiconductor element.
13, the encapsulating structure of image sensor according to claim 11 is characterized in that described non-conductive adhesive is a non-conductive adhesive paste or a non-conductive glued membrane.
14, the encapsulating structure of image sensor according to claim 11, it is characterized in that described glass circuit board has more at least one protruding dam, this non-conductive adhesive is arranged at outside this protruding dam, makes between this protruding dam, this sensing wafer and this glass circuit board to have a gap.
15, the encapsulating structure of image sensor according to claim 11, it is relative with this glass circuit board and establish to it is characterized in that described sensing wafer has a sensing area, and this encapsulating structure also comprises:
One printing opacity glue is arranged between this sensing area and this glass circuit.
16, the encapsulating structure of image sensor according to claim 11 is characterized in that also comprising:
A plurality of conductive projections are arranged at each described first connection gasket or each described second connection gasket respectively.
17, the encapsulating structure of image sensor according to claim 16 is characterized in that described laser welding penetrates this glass circuit board with laser beam and shines described first connection gasket, described conductive projection and described second connection gasket.
18, the encapsulating structure of image sensor according to claim 11 is characterized in that also comprising:
One circuit board is arranged on this glass circuit board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810008024 CN101527268A (en) | 2008-03-03 | 2008-03-03 | Packaging structure for video sensor and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200810008024 CN101527268A (en) | 2008-03-03 | 2008-03-03 | Packaging structure for video sensor and manufacturing method thereof |
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| CN101527268A true CN101527268A (en) | 2009-09-09 |
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| CN 200810008024 Pending CN101527268A (en) | 2008-03-03 | 2008-03-03 | Packaging structure for video sensor and manufacturing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543939A (en) * | 2012-01-05 | 2012-07-04 | 三星半导体(中国)研究开发有限公司 | Laminated inverted chip packaging structure for superfine-pitch welding pads and manufacturing method thereof |
| CN110943106A (en) * | 2018-09-21 | 2020-03-31 | 上海和辉光电有限公司 | Display panel and manufacturing method thereof |
| CN114745850A (en) * | 2022-04-13 | 2022-07-12 | 业成科技（成都）有限公司 | Fingerprint identification device and manufacturing method of fingerprint identification device |
-
2008
- 2008-03-03 CN CN 200810008024 patent/CN101527268A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543939A (en) * | 2012-01-05 | 2012-07-04 | 三星半导体(中国)研究开发有限公司 | Laminated inverted chip packaging structure for superfine-pitch welding pads and manufacturing method thereof |
| CN102543939B (en) * | 2012-01-05 | 2015-09-16 | 三星半导体(中国)研究开发有限公司 | The lamination flip chip packaging structure of ultra fine-pitch pad and manufacture method thereof |
| CN110943106A (en) * | 2018-09-21 | 2020-03-31 | 上海和辉光电有限公司 | Display panel and manufacturing method thereof |
| CN110943106B (en) * | 2018-09-21 | 2022-08-26 | 上海和辉光电股份有限公司 | Display panel and manufacturing method thereof |
| CN114745850A (en) * | 2022-04-13 | 2022-07-12 | 业成科技（成都）有限公司 | Fingerprint identification device and manufacturing method of fingerprint identification device |
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Open date: 20090909 |